CN200976345Y - Chip packaging structure - Google Patents
Chip packaging structure Download PDFInfo
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- CN200976345Y CN200976345Y CN200620147480.5U CN200620147480U CN200976345Y CN 200976345 Y CN200976345 Y CN 200976345Y CN 200620147480 U CN200620147480 U CN 200620147480U CN 200976345 Y CN200976345 Y CN 200976345Y
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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Abstract
一种芯片封装结构,其包括一承载器、至少一芯片、一散热器与一导热介质。芯片配置于承载器上且电连接至承载器。散热器配置于承载器上,其中散热器与承载器共同形成一密闭空间,且芯片位于密闭空间内,而导热介质填满密闭空间。此外,一种芯片封装结构的制造方法亦被提出。
A chip packaging structure includes a carrier, at least one chip, a heat sink and a heat conducting medium. The chip is disposed on the carrier and electrically connected to the carrier. The heat sink is disposed on the carrier, wherein the heat sink and the carrier together form a closed space, and the chip is located in the closed space, and the heat conducting medium fills the closed space. In addition, a manufacturing method of the chip packaging structure is also proposed.
Description
技术领域technical field
本实用新型涉及一种芯片封装结构,且尤其涉及一种散热效率有所提升的芯片封装结构。The utility model relates to a chip packaging structure, in particular to a chip packaging structure with improved heat dissipation efficiency.
背景技术Background technique
在半导体产业中,集成电路(integrated circuits,IC)的生产主要可分为三个阶段:集成电路的设计(IC design)、集成电路的制作(IC process)及集成电路的封装(IC package)。In the semiconductor industry, the production of integrated circuits (IC) can be divided into three stages: integrated circuit design (IC design), integrated circuit production (IC process) and integrated circuit packaging (IC package).
在集成电路的制作中,芯片(chip)是经由晶片(wafer)制作、形成集成电路以及切割晶片(wafer sawing)等步骤而完成。晶片具有一有源面(activesurface),其泛指晶片的具有有源元件(active element)的表面。当晶片内部的集成电路完成之后,晶片的有源面更配置有多个焊垫(bonding pad),以使最终由晶片切割所形成的芯片可经由这些焊垫而向外电连接于一承载器(carrier)。承载器例如为一导线架(leadframe)或一封装基板(packagesubstrate)。芯片可以引线接合(wire bonding)或倒装芯片接合(flip chipbonding)的方式连接至承载器上,使得芯片的这些焊垫可电连接于承载器的接点,以构成一芯片封装结构。In the manufacture of integrated circuits, chips are completed through the steps of wafer manufacturing, forming integrated circuits, and wafer sawing. The chip has an active surface, which generally refers to the surface of the chip with active elements. After the integrated circuit inside the wafer is completed, the active surface of the wafer is further equipped with a plurality of bonding pads (bonding pads), so that the chips formed by wafer dicing can be electrically connected to a carrier through these bonding pads ( carrier). The carrier is, for example, a leadframe or a package substrate. The chip can be connected to the carrier by wire bonding or flip chip bonding, so that the pads of the chip can be electrically connected to the contacts of the carrier to form a chip package structure.
就倒装芯片接合技术(flip chip bonding technology)而言,通常在晶片的有源面上形成这些焊垫之后,会在各个焊垫上进行制作一凸块(bump),以作为芯片电连接外部封装基板之用。由于这些凸块通常以面阵列的方式排列于芯片的有源面上,使得倒装芯片接合技术适于运用在高接点数及高接点密度的芯片封装结构,例如已普遍地应用于半导体封装产业中的倒装芯片/球栅阵列式封装(flip chip/ball grid array package)。此外,相较于引线接合技术,由于这些凸块可提供芯片与承载器之间较短的传输路径,使得倒装芯片接合技术可提升芯片封装结构的电性效能(electrical performance)。As far as flip chip bonding technology is concerned, usually after forming these pads on the active surface of the chip, a bump (bump) will be made on each pad to electrically connect the chip to the external package. Substrate use. Since these bumps are usually arranged in an area array on the active surface of the chip, the flip chip bonding technology is suitable for use in chip packaging structures with high contact count and high contact density. For example, it has been widely used in the semiconductor packaging industry. Flip chip/ball grid array package (flip chip/ball grid array package). In addition, compared with the wire bonding technology, the flip chip bonding technology can improve the electrical performance of the chip packaging structure because the bumps can provide a shorter transmission path between the chip and the carrier.
在现有的倒装芯片接合工艺中,在将芯片经由多个凸块而电连接且固定在基板上之后,为了加强芯片的散热效果,通常会将一具有凹槽(cavity)的散热器(heat spreader)通过散热胶(thermal adhesive)而贴附于芯片的背面,使得芯片位于配置于基板上的散热器的凹槽内。当现有芯片封装结构运作时,芯片所产生的热主要通过芯片背面的散热胶与散热器而传递(transfer)至外界环境中,所以散热器直接与芯片背面热耦接的部分其温度较高,而散热器其它部分的温度则较低。换言之,现有芯片封装结构的散热器的散热效率较差。然而,随着芯片运作时的高耗能与高频率的设计趋势下,现有贴附于芯片上的散热器的散热效率已不敷需求,因此改善现有芯片封装结构的散热效率是有其必要性。In the existing flip-chip bonding process, after the chip is electrically connected and fixed on the substrate via a plurality of bumps, in order to enhance the heat dissipation effect of the chip, a radiator with a cavity (cavity) is usually placed. The heat spreader) is attached to the back of the chip through thermal adhesive, so that the chip is located in the groove of the heat sink disposed on the substrate. When the existing chip packaging structure is in operation, the heat generated by the chip is mainly transferred to the external environment through the heat dissipation glue and the heat sink on the back of the chip, so the temperature of the part of the heat sink that is directly thermally coupled to the back of the chip is relatively high. , while the temperature of other parts of the radiator is lower. In other words, the heat dissipation efficiency of the heat sink of the existing chip packaging structure is poor. However, with the design trend of high energy consumption and high frequency during chip operation, the heat dissipation efficiency of the existing heat sink attached to the chip is no longer sufficient. Therefore, it is necessary to improve the heat dissipation efficiency of the existing chip package structure. necessity.
实用新型内容Utility model content
本实用新型的目的是提供一种芯片封装结构,其散热效率有所提升。The purpose of the utility model is to provide a chip packaging structure, the heat dissipation efficiency of which is improved.
为达上述或是其它目的,本实用新型提出一种芯片封装结构,其包括一承载器、至少一芯片、一散热器与一导热介质(thermal interface material,TIM)。芯片配置于承载器上且电连接至承载器。散热器配置于承载器上,其中散热器与承载器共同形成一密闭空间(closed space),且芯片位于密闭空间内。此外,导热介质填满密闭空间。To achieve the above or other purposes, the present invention provides a chip packaging structure, which includes a carrier, at least one chip, a heat sink and a thermal interface material (TIM). The chip is configured on the carrier and electrically connected to the carrier. The radiator is disposed on the carrier, wherein the radiator and the carrier together form a closed space, and the chip is located in the closed space. In addition, the heat transfer medium fills the confined space.
为达上述或是其它目的,本实用新型提出一种芯片封装结构,其包括一承载器、至少一芯片、一散热器与一导热介质。芯片配置于承载器上且电连接至承载器。散热器配置于承载器上,其中散热器与承载器共同形成一密闭空间,且芯片位于密闭空间内。此外,导热介质位于密闭空间内,其中导热介质与散热器的内表面相接触。To achieve the above or other purposes, the present invention provides a chip packaging structure, which includes a carrier, at least one chip, a heat sink and a heat conducting medium. The chip is configured on the carrier and electrically connected to the carrier. The heat sink is arranged on the carrier, wherein the heat sink and the carrier together form a closed space, and the chip is located in the closed space. In addition, the thermally conductive medium is located in the closed space, wherein the thermally conductive medium is in contact with the inner surface of the heat sink.
为让本实用新型的上述和其它目的、特征和优点能更明显易懂,下文特举优选实施例,并配合附图,作详细说明如下。In order to make the above and other objects, features and advantages of the present invention more comprehensible, preferred embodiments will be described below in detail with accompanying drawings.
附图说明Description of drawings
图1A绘示本实用新型第一实施例的一种芯片封装结构的剖面示意图;FIG. 1A shows a schematic cross-sectional view of a chip packaging structure according to the first embodiment of the present invention;
图1B绘示本实用新型第一实施例的另一种芯片封装结构的剖面示意图;FIG. 1B shows a schematic cross-sectional view of another chip packaging structure of the first embodiment of the present invention;
图2A至图2G绘示图1A的芯片封装结构的制造方法的流程示意图;FIG. 2A to FIG. 2G are schematic flowcharts illustrating a manufacturing method of the chip packaging structure of FIG. 1A;
图3绘示本实用新型第二实施例的一种芯片封装结构的剖面示意图。FIG. 3 is a schematic cross-sectional view of a chip packaging structure according to the second embodiment of the present invention.
附图标记说明Explanation of reference signs
10:密闭空间 20:容置空间10: Confined space 20: Accommodating space
100、100’、200:芯片封装结构 110、210:承载器100, 100', 200:
112、:承载面 120、220:芯片112.:
130、130’:散热器 132:散热板体130, 130': Radiator 132: Heat sink body
132a:散热板体的内表面 134:散热环体132a: inner surface of heat dissipation plate 134: heat dissipation ring
134a:散热环体的内表面 136:凹槽134a: inner surface of heat dissipation ring 136: groove
138:散热器的内表面 139:鳍片138: Inner surface of radiator 139: Fins
140:导热介质 150:导电凸块140: heat conduction medium 150: conductive bump
160:底胶层 H:高度160: Primer layer H: Height
具体实施方式Detailed ways
请参考图1A,其绘示本实用新型第一实施例的一种芯片封装结构的剖面示意图。第一实施例的芯片封装结构100包括一承载器110、至少一芯片120、一散热器130与一导热介质140。芯片120配置于承载器110上且电连接至承载器110。散热器130配置于承载器110上,其中散热器130与承载器110共同形成一密闭空间10,且芯片120位于密闭空间10内。此外,导热介质140填满密闭空间10。Please refer to FIG. 1A , which is a schematic cross-sectional view of a chip packaging structure according to a first embodiment of the present invention. The
值得注意的是,当芯片封装结构100运作时,由于导热介质140填满密闭空间10,因此芯片120所产生的热可通过导热介质140以传导的方式传递至散热器130。由图1的粗黑箭头可知,本实施例的芯片120所产生的热不但可由芯片120的背面亦可由芯片120的侧面以传导的方式传递至散热器130。因此,与现有相较,本实施例的散热器130的温度较为均匀(uniform),换言之,本实施例的芯片封装结构100的散热效率优选。It is worth noting that when the
导热介质140可为导热化合物(thermally conductive compound)或导热弹性体(thermally conductive elastomer)。具体而言,导热介质140可为锡膏(solder paste)、散热膏(thermal grease)或为添加二氧化硅或银的环氧树脂(epoxy resin)。其中导热介质140亦可包含锡或铅等金属材质。在此必须说明的是,导热介质140可依设计者的需求而有所改变,第一实施例只是用以举例而非限定本实用新型。The thermally conductive medium 140 can be thermally conductive compound or thermally conductive elastomer. Specifically, the
详言之,第一实施例的散热器130包括一散热板体(thermal plate)132与一散热环体(thermal ring)134。散热环体134配置于散热板体132上,且散热环体134与散热板体132共同形成一凹槽136,而散热环体134位于散热板体132与承载器110之间。由图1可知,在第一实施例中,密闭空间10可由散热板体132、散热环体134与承载器110所共同形成,而填满密闭空间10的导热介质140与散热器130的内表面138相接触。换言之,第一实施例的导热介质140与散热器130的凹槽136的内壁相接触。In detail, the
在此必须说明的是,第一实施例的散热板体132与散热环体134可预先分别成型,之后再加工加以接合而成(详见后述),然而散热板体132与散热环体134亦可依照设计需求而一体成型(integrally formed)。此外,请参考图1B,其绘示本实用新型第一实施例的另一种芯片封装结构的剖面示意图。芯片封装结构100’的散热器130’更包括多个鳍片(fin)139,其配置于散热板体132的相对于散热环体134的一侧上。换言之,这些鳍片139由散热板体132以朝向远离芯片120的方向延伸。这些鳍片139的功能在于增加散热器130’与外界环境进行热交换的面积,进而提升散热器130’的散热效率。It must be noted here that the heat
请再参考图1A,第一实施例的芯片封装结构100更包括多个导电凸块(conductive bump)150与一底胶层(underfill layer)160,而承载器110可为电路板。这些导电凸块150配置于芯片120与承载器110之间,且底胶层160包覆这些导电凸块150。底胶层160用以保护这些导电凸块150,并且当芯片封装结构100运作而产生热时,底胶层160可缓冲受热的承载器110与受热的芯片120之间所产生的热应变(thermal strain)的不匹配(mismatch)的现象。Please refer to FIG. 1A again, the
以下对于第一实施例的芯片封装结构100的制造方法作详细说明。图2A至图2G绘示图1A的芯片封装结构的制造方法的流程示意图,第一实施例的芯片封装结构100的制造方法包括下列步骤。首先,请参考图2A,提供一承载器110。接着,请参考图2B,将至少一芯片120配置于承载器110上。接着,电连接芯片120与承载器110。The manufacturing method of the
在第一实施例中,上述将芯片120配置于承载器110上且电连接至承载器110的这些步骤是通过倒装芯片接合技术而加以完成,其包括以下子步骤。首先,例如以电镀的方式于芯片110上形成多个导电凸块150。之后,将芯片120配置于承载器110上,且回焊(reflow)这些导电凸块150,使得这些导电凸块150电连接于芯片120与承载器110之间。最后,形成一底胶层160,以包覆这些导电凸块150。底胶层160通常是通过于芯片120与承载器110之间填充一底胶(underfill)且加以烘烤而完成。In the first embodiment, the above-mentioned steps of disposing the
之后,请参考图2C,例如以黏着的方式将一散热环体134配置于承载器110上,使得散热环体134围绕芯片120。之后,请参考图2D,将一导热介质140填满散热环体134于承载器110上所围绕的一容置空间(containingspace)20,使得导热介质140包覆芯片120。Afterwards, please refer to FIG. 2C , for example, a
然后,请参考图2E,在第一实施例中,可在上述将导热介质140填满容置空间20的步骤之后,将导热介质140内部的气体抽离。若导热介质140为固态,则可以真空抽取(vacuum extraction)的方式将导热介质140内部的气体抽离;若导热介质140为液态,则可以真空抽取或加热或两者并行的方式将导热介质140内部的气体抽离。在此必须说明的是,在将导热介质140内部的气体抽离之后,导热介质140的高度H通常会下降。Then, please refer to FIG. 2E , in the first embodiment, after the above-mentioned step of filling the
接着,请参考图2F,再填入导热介质140,以填满容置空间20且包覆芯片120。然后,请参考图2G,例如通过黏着或焊接的方式将一散热板体132配置于散热环体134上,使得散热板体132覆盖芯片120,且导热介质140填满由散热板体132、散热环体134与承载器110所共同形成的一密闭空间10。其中,散热板体132与散热环体134构成(compose)本实施例的散热器130。Next, please refer to FIG. 2F , and then fill in the
请参考图1A,在第一实施例中,前述的密闭空间10是以散热板体132的内表面132a、散热环体134的内表面134a及承载器110的承载面112为界。散热器130的内表面138是由散热板体132的内表面132a与散热环体134的内表面134a所构成。导热介质140填入密闭空间10后,导热介质140会和内表面138与承载面112相接触。亦即,导热介质140覆盖散热板体132的内表面132a,散热环体134的内表面134a及承载器110的承载面112。Please refer to FIG. 1A , in the first embodiment, the aforementioned
请参考图3,其绘示本实用新型第二实施例的一种芯片封装结构的剖面示意图。第二实施例的芯片封装结构200与第一实施例的芯片封装结构100的主要不同之处在于,第二实施例的芯片封装结构200包括多个芯片220。这些芯片220相互电连接,且以堆叠的方式配置于承载器210上。在此必须说明的是,这些芯片220的数量与配置于承载器210上的方式可依照设计者的需求而有所改变。本实施例只是用以举例而非限定本实用新型。Please refer to FIG. 3 , which shows a schematic cross-sectional view of a chip packaging structure according to a second embodiment of the present invention. The main difference between the
综上所述,本实用新型的芯片封装结构及其制造方法至少具有以下的优点:To sum up, the chip packaging structure of the present invention and its manufacturing method have at least the following advantages:
一、当本实用新型的芯片封装结构运作时,由于导热介质填满密闭空间,所以芯片所产生的热可通过导热介质以传导的方式传递至散热器。因此,本实用新型的芯片所产生的热不但可由芯片的背面亦可由芯片的侧面以传导的方式传递至散热器。由上述可知,与现有相较,本实用新型的散热器内部温度较为均匀,亦即本实用新型的芯片封装结构的散热效率优选。1. When the chip packaging structure of the present invention is in operation, since the heat-conducting medium fills the confined space, the heat generated by the chip can be transferred to the radiator through the heat-conducting medium in a conductive manner. Therefore, the heat generated by the chip of the present invention can be transferred to the radiator in a conduction manner not only from the back of the chip but also from the side of the chip. It can be known from the above that, compared with the prior art, the internal temperature of the heat sink of the present invention is more uniform, that is, the heat dissipation efficiency of the chip packaging structure of the present invention is better.
二、由于本实用新型的芯片封装结构的制造方法的这些步骤可与现有工艺整合,因此本实用新型的散热效率有所提升的芯片封装结构的制造成本较为低廉。2. Since the steps of the manufacturing method of the chip packaging structure of the present invention can be integrated with existing processes, the manufacturing cost of the chip packaging structure of the present invention with improved heat dissipation efficiency is relatively low.
虽然本实用新型已以优选实施例揭露如上,然其并非用以限定本实用新型,任何本技术领域内的技术人员,在不脱离本实用新型的精神和范围内,当可作些许的更动与润饰,因此本实用新型的保护范围当视所附的权利要求书所界定者为准。Although the present utility model has been disclosed above with preferred embodiments, it is not intended to limit the present utility model. Any person skilled in the art can make some modifications without departing from the spirit and scope of the present utility model. and retouching, so the scope of protection of the present utility model should be defined by the appended claims.
Claims (10)
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103187371A (en) * | 2011-12-27 | 2013-07-03 | 财团法人工业技术研究院 | Semiconductor structure and manufacturing method thereof |
| CN108962876A (en) * | 2012-10-11 | 2018-12-07 | 台湾积体电路制造股份有限公司 | POP structure and forming method thereof |
| CN112885794A (en) * | 2021-01-15 | 2021-06-01 | 浪潮电子信息产业股份有限公司 | PCB (printed Circuit Board), POP (Point of Place) packaging heat dissipation structure and manufacturing method thereof |
-
2006
- 2006-11-24 CN CN200620147480.5U patent/CN200976345Y/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103187371A (en) * | 2011-12-27 | 2013-07-03 | 财团法人工业技术研究院 | Semiconductor structure and manufacturing method thereof |
| CN108962876A (en) * | 2012-10-11 | 2018-12-07 | 台湾积体电路制造股份有限公司 | POP structure and forming method thereof |
| CN108962876B (en) * | 2012-10-11 | 2022-05-17 | 台湾积体电路制造股份有限公司 | POP structure and forming method thereof |
| CN112885794A (en) * | 2021-01-15 | 2021-06-01 | 浪潮电子信息产业股份有限公司 | PCB (printed Circuit Board), POP (Point of Place) packaging heat dissipation structure and manufacturing method thereof |
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