CN207150540U - A kind of temperature-compensation circuit of radio-frequency power amplifier - Google Patents
A kind of temperature-compensation circuit of radio-frequency power amplifier Download PDFInfo
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- CN207150540U CN207150540U CN201720680032.XU CN201720680032U CN207150540U CN 207150540 U CN207150540 U CN 207150540U CN 201720680032 U CN201720680032 U CN 201720680032U CN 207150540 U CN207150540 U CN 207150540U
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Abstract
The utility model discloses a kind of temperature-compensation circuit of radio-frequency power amplifier, the temperature-compensation circuit includes：Temperature-control circuit and negative-feedback circuit；Wherein, the temperature-control circuit, for producing first electric signal corresponding with temperature, the second electric signal of first node is adjusted according to first electric signal；The negative-feedback circuit, for based on second electric signal, negative-feedback signal to be provided to radio-frequency power amplifier by section point；Wherein, second electric signal, for making the change in resistance of the negative-feedback circuit, to adjust the negative-feedback signal related to the resistance；The negative-feedback signal, for inputting the radio-frequency power amplifier so that the change in gain of the radio-frequency power amplifier.The utility model further simultaneously discloses a kind of rf power amplifier circuit.
Description
Technical Field
The utility model relates to a radio frequency power amplification technology among the electronic technology field especially relates to a radio frequency power amplifier's temperature compensation circuit.
Background
In a mobile communication system, the efficiency and linearity of a radio frequency power amplifier directly affect the energy consumption and quality of the communication process. The terminal equipment needs to work normally in different scenes and regions, which requires that the working temperature range of the radio frequency power amplifier can at least cover-25 ℃ to 85 ℃, namely the performance of the radio frequency power amplifier can meet the requirements of a mobile communication protocol on power consumption and linearity in low-temperature and high-temperature environments. However, the temperature characteristics of the transistor may cause the operating point of the rf power amplifier to change, and generally, the gain of the rf power amplifier decreases when the temperature increases; the temperature decreases and the amplifier gain increases.
However, the temperature characteristics of the transistor may cause the performance of the rf power amplifier to deteriorate, and cannot meet the indexes of the mobile communication protocol for power consumption and linearity. An effective solution is to add a temperature compensation circuit in the rf power amplifier to compensate for this temperature characteristic of the transistor. However, the temperature compensation circuit of the conventional rf power amplifier has some problems: under the condition of high temperature, the bias current Id of the radio frequency power amplifier is raised by the temperature compensation circuit, so that the direct current working point of the amplifier is raised, the power consumption of the circuit is increased, the working temperature of the radio frequency power amplifier is further increased, and the amplification linearity of the radio frequency power amplifier is further deteriorated; under the condition of low temperature, the bias current Id of the radio frequency power amplifier is pulled down by the temperature compensation circuit, the direct current operating point of the radio frequency power amplifier is pressed down, the gain of the radio frequency power amplifier is raised when the amplified signal of the radio frequency power amplifier is a large signal, and the linearity of the radio frequency power amplifier is deteriorated when the power is backed off.
SUMMERY OF THE UTILITY MODEL
In view of this, the embodiment of the present invention is expected to provide a temperature compensation circuit for a radio frequency power amplifier, which can solve the problem that the dc operating point of the radio frequency power amplifier is affected by temperature and changes, and cannot operate in the linear amplification region, resulting in poor linearity. In order to achieve the above object, the embodiment of the present invention provides a technical solution that:
the embodiment of the utility model provides a temperature compensation circuit of a radio frequency power amplifier; the temperature compensation circuit includes: a temperature control circuit and a negative feedback circuit; wherein,
the temperature control circuit is used for generating a first electric signal corresponding to the temperature and adjusting a second electric signal of a first node according to the first electric signal; the first node is a connection point of the temperature control circuit and the negative feedback circuit;
the negative feedback circuit is used for providing a negative feedback signal to the radio frequency power amplifier through a second node based on the second electric signal; the second electric signal is used for changing the resistance value of the negative feedback circuit so as to adjust the negative feedback signal related to the resistance value; the second node is a connection point of the negative feedback circuit and the input end of the radio frequency power amplifier;
wherein, the negative feedback signal is used for inputting the radio frequency power amplifier, so that the gain of the radio frequency power amplifier is changed.
In the above technical solution, the temperature control circuit includes: the temperature control circuit comprises a temperature control power supply, a steady-state power supply, a clamping circuit, a filter circuit and an adjustable resistance circuit; wherein,
the temperature control power supply is connected with the adjustable resistance circuit through the first node and is used for providing an electric signal which changes along with the temperature to the adjustable resistance circuit;
the steady-state power supply is connected with the adjustable resistance circuit through the first node and is used for providing an electric signal with a fixed value for the adjustable resistance circuit;
the clamping circuit is connected with the first node and is used for limiting the upper limit of the second electric signal;
the filter circuit is connected with the first node and is used for filtering interference signals in the second electric signals;
the adjustable resistance circuit is connected with the first node and used for adjusting the second electric signal.
In the above technical solution, the negative feedback circuit includes: the circuit comprises a transistor group circuit, a resistor circuit, a first capacitor and a second capacitor; wherein,
the transistor group circuit comprises n transistors connected in series, and the grid electrodes of the transistors are connected with the first node and used for enabling the resistance value of the negative feedback circuit to change along with the change of the second electric signal;
the resistance circuit comprises n resistors and 1 grounding resistor, wherein the n resistors are connected with the n transistors in parallel and used for providing direct current zero level for the n transistors; wherein n is a positive integer greater than 3;
the first capacitor is positioned between the second node and the transistor group circuit;
the second capacitor is positioned between a third node and the transistor group circuit;
the third node is a connection point of the negative feedback circuit and the output end of the radio frequency power amplifier.
In the above technical solution, the negative feedback circuit includes: the circuit comprises an inverter group circuit, a transistor group circuit, a parallel resistor circuit, a first capacitor and a second capacitor; wherein,
the inverter group circuit comprises m inverters, the output end of each inverter is connected with the input end of each transistor group in the transistor group circuit, and the input end of each inverter is connected with the first node and used for transmitting the second electric signal to the transistor group circuit after being inverted;
the transistor group circuit comprises m parallel transistor groups, each transistor group comprises n series transistors, and the resistance value of the transistor group circuit is changed along with the change of a second electric signal;
the resistance circuit comprises m resistance groups and 1 grounding resistance, each resistance group in the m resistance groups comprises n resistances, and the n resistances are connected with n transistors in each transistor group in the transistor group circuit in parallel and used for providing direct current zero level for the m parallel transistor groups;
the first capacitor is positioned between the second node and the transistor group circuit;
the second capacitor is positioned between a third node and the transistor group circuit;
wherein m is a positive integer greater than 1, n is a positive integer greater than 3, and the third node is a connection point between the negative feedback circuit and the output end of the radio frequency power amplifier.
The embodiment of the utility model provides a radio frequency power amplifier circuit is still provided, radio frequency power amplifier circuit includes: a temperature compensation circuit and a radio frequency power amplifier; wherein,
the temperature compensation circuit includes: a temperature control circuit and a negative feedback circuit; wherein,
the temperature control circuit is used for generating a first electric signal corresponding to the temperature and adjusting a second electric signal of a first node according to the first electric signal; the first node is a connection point of the temperature control circuit and the negative feedback circuit;
the negative feedback circuit is used for providing a negative feedback signal to the radio frequency power amplifier through a second node based on the second electric signal; the second electric signal is used for changing the resistance value of the negative feedback circuit so as to adjust the negative feedback signal related to the resistance value; the second node is an end point of the negative feedback circuit connected with the input end of the radio frequency power amplifier;
wherein, the negative feedback signal is used for inputting the radio frequency power amplifier, so that the gain of the radio frequency power amplifier is changed.
The radio frequency power amplifier comprises:
at least one input and at least one output for amplifying an input signal;
wherein the input terminal is connected to a second node for receiving the input signal;
the output end is connected with the negative feedback circuit through a third node and is used for outputting an output signal amplified by an input signal; wherein the gain of the radio frequency power amplifier is temperature dependent.
In the above technical solution, the circuit further includes: a bias circuit;
the bias circuit comprises a bias signal output end, and the bias signal output end is connected with the second node and used for providing a direct current bias signal for the radio frequency power amplifier.
In the above technical solution, the radio frequency power amplifier includes: and the input end of the amplifying transistor is connected with the second node.
In the above technical solution, the radio frequency power amplifier includes: and the n amplifying transistors are connected in series, and the input end of the first amplifying transistor is connected with the second node.
In the above technical solution, the radio frequency power amplifier further includes: and the DC blocking capacitor is used for connecting the second node and the negative feedback circuit.
The embodiment of the utility model provides a temperature compensation circuit of radio frequency power amplifier sets up temperature control circuit and negative feedback circuit in temperature compensation circuit, temperature control circuit can be according to the second electric signal of temperature adjustment first node, then provides the second electric signal for the negative feedback circuit, the negative feedback circuit is based on the second electric signal, provides the negative feedback signal that is relevant with the temperature to radio frequency power amplifier, the negative feedback signal here, after inputing radio frequency power amplifier, can make radio frequency power amplifier produce the effect opposite with the temperature, thereby can weaken the influence of temperature to radio frequency power amplifier, solve among the prior art because the influence of temperature leads to the linear variation of radio frequency power amplifier amplification, can not stably work the problem in the linear amplification district, through increase temperature compensation circuit in radio frequency power amplifier circuit, the working point of the radio frequency power amplifier is stabilized, and the stability and the working efficiency of the radio frequency power amplifying circuit are improved.
Drawings
Fig. 1 is a schematic diagram of a basic structure of a temperature compensation circuit of a radio frequency power amplifier according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a specific structure of a temperature compensation circuit of a radio frequency power amplifier according to an embodiment of the present invention;
fig. 3 is a schematic diagram illustrating a relationship between an electric signal generated by a temperature control power supply and a steady-state power supply and a temperature according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a second electrical signal corresponding to different adjustable resistance values according to a first embodiment of the present invention changing with temperature;
fig. 5 is a schematic diagram illustrating a relationship between an equivalent on-resistance and a gate voltage of a transistor according to an embodiment of the present invention;
fig. 6 is a schematic diagram of a specific structure of a radio frequency power amplifying circuit with equivalent transistor components as resistors according to an embodiment of the present invention;
fig. 7 is a schematic diagram of a specific structure of a radio frequency power amplifying circuit according to an embodiment of the present invention;
fig. 8 is a schematic diagram of a specific structure of a radio frequency power amplifying circuit of a negative feedback circuit connected to a dc blocking capacitor according to an embodiment of the present invention;
fig. 9 is a schematic diagram of a specific structure of a temperature compensation circuit of a second rf power amplifier according to an embodiment of the present invention;
fig. 10 is a schematic diagram of a specific structure of a three-rf power amplifier circuit according to an embodiment of the present invention.
Detailed Description
In the embodiment of the utility model, the temperature compensation circuit of the radio frequency power amplifier is used for compensating the influence of temperature on the gain of the radio frequency power amplifier, so that the radio frequency power amplifier works in a linear working area to amplify the input signal; the temperature compensation circuit comprises a temperature control circuit and a negative feedback circuit, wherein the temperature control circuit generates a first electric signal corresponding to the temperature and adjusts a second electric signal of a first node according to the first electric signal; the second electric signal is provided for the negative feedback circuit through the first node, the resistance value of the negative feedback circuit in the negative feedback circuit is changed, and then a negative feedback signal fed back to the radio frequency power amplifier is adjusted, so that the gain of the radio frequency power amplifier is changed, and the temperature compensation is carried out on the radio frequency power amplifier.
Wherein the first node is a connection point of the temperature control circuit and the negative feedback circuit;
in order to understand the features and technical contents of the present invention in more detail, the following description is given to the implementation of the present invention with reference to the accompanying drawings.
The embodiment of the utility model provides an in, radio frequency power amplifier's temperature compensation circuit's basic composition structure is shown in fig. 1, temperature compensation circuit includes: a temperature control circuit 101 and a negative feedback circuit 102.
The temperature control circuit 101 is configured to generate a first electrical signal corresponding to a temperature, and adjust a second electrical signal of the first node according to the first electrical signal; the first node is a connection point of the temperature control circuit and the negative feedback circuit.
The temperature control circuit 101 generates a first electric signal corresponding to the temperature: the temperature control circuit 101 may generate a first electrical signal that varies with temperature according to temperature variation in the circuit, and the first electrical signal increases or decreases when the temperature increases or decreases, and may be a voltage signal or a current signal. The adjusting the second electrical signal of the first node according to the first electrical signal is: since the first node connects the temperature control circuit 101 and the negative feedback circuit 102, when the first electrical signal changes according to the temperature change, the second electrical signal on the first node will be changed, that is, the second signal will also change according to the temperature change; wherein the second electrical signal may be a voltage signal or a current signal.
The negative feedback circuit 102 is configured to provide a negative feedback signal to the radio frequency power amplifier through a second node based on the second electrical signal; the second electric signal is used for changing the resistance value of the negative feedback circuit so as to adjust the negative feedback signal related to the resistance value; the second node is a connection point of the negative feedback circuit and the input end of the radio frequency power amplifier.
The negative feedback signal is used for being input into the radio frequency power amplifier, so that the gain of the radio frequency power amplifier changes, the negative feedback signal changes according to the change of the second electric signal of the first node, and after the negative feedback signal is input into the radio frequency power amplifier, the negative effect of temperature on the gain of the radio frequency power amplifier is achieved, and the change of the gain of the radio frequency power amplifier caused by the influence of the temperature can be counteracted. The negative feedback circuit provides a negative feedback signal to the rf power amplifier 102 through a second node based on the second electrical signal 101b as follows: the resistance value of the negative feedback circuit 101b is controlled by the second electrical signal, which is used to change the resistance value of the negative feedback circuit 101b to adjust the negative feedback signal related to the resistance value. When the second electrical signal changes with the change of the temperature, the resistance value of the negative feedback circuit 101b also changes with the second electrical signal, so as to change the negative feedback signal related to the resistance value; one end of the negative feedback circuit 101b is connected to the input end of the radio frequency power amplifier 102 through a second node, and provides a negative feedback signal to the radio frequency power amplifier 102 through the second node, and the other end of the negative feedback circuit 101b is connected to the output end of the power discharger 102 through a third node.
Example one
In the first embodiment of the present invention, the specific structure of the temperature compensation circuit of the rf power amplifier is as shown in fig. 2, and the temperature compensation circuit includes a temperature control circuit 201 and a negative feedback circuit 202.
The temperature control circuit 201 includes a temperature control power supply, a steady-state power supply, a clamping circuit, a filter circuit, and an adjustable resistance circuit.
The temperature control power supply is connected with the adjustable resistance circuit through the first node and is used for providing an electric signal which changes along with the temperature to the adjustable resistance circuit; the electric signal of the temperature control power supply is in direct proportion to the absolute temperature.
The steady-state power supply is connected with the adjustable resistance circuit through the first node and is used for providing an electric signal with a fixed value for the adjustable resistance circuit; the electric signal of the steady-state power supply does not change along with the change of the temperature.
The embodiment of the utility model provides an in one, the control by temperature change power with stable state power is the electric current source, the control by temperature change power with the relation of the signal of telecommunication and temperature that stable state power produced is as shown in figure 3. Wherein, FIG. 1 shows the linear relationship between the current signal of the steady-state power supply and the temperature, Iref represents the current signal of the steady-state power supply, I1At a fixed value for steady state power supply, temp represents temperature; FIG. 2IthRepresenting the linear relationship of the current signal of the temperature-controlled power supply to the temperature, I0Represents the maximum value that the current signal can be adjusted, temp represents the temperature, THAnd TLRespectively representing the upper and lower limits of temperature, the working temperature range of the temperature control power supply comprises-25 ℃ to 85 ℃, IthThe expression of (a) is: i isth＝(I0/(TH-TL))×(temp-TL) Iref and IthIn the opposite direction, and FIG. 3 shows Iref and I in opposite directionsthThe cancelled current signal IRtA linear relationship with the temperature temp, IRtI.e. the current signal of the adjustable resistance circuit, IRt＝Iref-Ith。
The clamping circuit is connected with the first node and is used for limiting the upper limit of the second electric signal; in fig. 2, Vg Clamp is used for indicating, and the Clamp circuit may be a simple Clamp circuit composed of circuit components such as a diode, a capacitor, and a resistor, or a triode Clamp circuit composed of circuit components such as a triode, a capacitor, and a resistor, and may fix an electrical signal at a predetermined value to stabilize the electrical signal in the circuit. The clamp circuit with the function of stabilizing the electric signal can be used in the circuit of the embodiment of the utility model.
The filter circuit is connected with the first node and is used for filtering interference signals in the second electric signals; the filter circuit may be comprised of a capacitor, represented in fig. 2 by C1.
The adjustable resistance circuit is connected with the first node and is used for adjusting the second electric signal; the adjustable resistance circuit is formed by connecting an adjustable resistance Rt and a transistor Mm1 in series, the slope of the second electric signal of the first node along with the change of temperature can be adjusted through the adjustable resistance Rt, the specific change relationship is shown in FIG. 4, the second electric signal is a voltage signal of the first node, and according to ohm's law, the voltage Vg of the first node can be expressed as Vg ═ ((T) 1H-TL)/Vg1-Vgh)×(TH-temp), wherein Vg1Is temp ═ TLThe value corresponding to Vg in the time slope 1, VghIs temp ═ TLThe value of Vg in the time slope 1 corresponds to, and the linear relationship between Vg and temp when Rt takes different values is respectively represented by the slope 1, 2, and 3 in fig. 4, so that the slope of the linear relationship between Vg and temp can be changed by adjusting Rt. The Mm1 can offset the fluctuation of the threshold voltage of the series transistor group in the negative feedback circuit along with the process, and in the application with low requirement on temperature compensation performance, the Mm1 can be removed to save the area of a chip.
The negative feedback circuit 202 includes: the circuit comprises a transistor group circuit, a resistor circuit, a first capacitor and a second capacitor.
The transistor group circuit comprises n transistors connected in series, and the input ends of the transistors are connected with the first node and used for enabling the resistance value of the negative feedback circuit to change along with the change of the second electric signal; the transistor group circuit comprises n series transistors Ms1, Ms2, Msn, n is a positive integer greater than 3. The gate of each transistor is connected to the first node, the gate voltage of each transistor is controlled by the second electrical signal of the first node, that is, Vg, when the transistor operates in a linear operating region, the equivalent on-resistance Ron of the transistor and the gate voltage Vg of the transistor have a certain functional relationship, the functional relationship curve of Ron and Vg is shown in fig. 5, where Ron and Vg are represented in fig. 5(1) in an inverse proportional relationship, and 1/Ron and Vg are represented in fig. 5(2) in a linear and direct proportional relationship, and the equivalent on-resistances of the n series transistors can be represented as Req1, Req2, …, Reqn.
The resistance circuit comprises n resistors and 1 grounding resistor, wherein the n resistors are connected with the n transistors in parallel and used for providing direct current zero level for the n transistors; wherein n is a positive integer greater than 3; the resistor circuit comprises n resistors connected in parallel with transistors and can be represented as Rs1, Rs2, …, Rsn, and a ground resistor can be represented as Rg. The values of the resistors Rs1, Rs2, … and Rsn are far larger than equivalent on-resistance values Req1, Req2, … and Reqn, the negative feedback characteristic of the negative feedback circuit depends on series total resistance Req which is Req1+ Req2+ … + Reqn, and n transistors can be equivalently regarded as n resistors. According to the principle of a negative feedback circuit, the larger Vg, the smaller Req and the smaller gain of the radio frequency power amplifier are under the same current bias condition; the smaller Vg and the larger Req, the larger the gain of the radio frequency power amplifier.
The first capacitance, which may be denoted as Cf1, between the second node and the transistor group circuit may be used to filter the dc current in the circuit.
Said second capacitor, located between the third node and said transistor group circuit, may be denoted Cf2, and may be used to filter the dc current in the circuit; the third node is a connection point of the negative feedback circuit and the output end of the radio frequency power amplifier.
The embodiment of the utility model provides a still provides a radio frequency power amplifier circuit, radio frequency power amplifier circuit's basic composition structure is as shown in figure 7, include: a temperature compensation circuit 701, a radio frequency power amplifier 702 and a bias circuit 703; the temperature compensation circuit includes: a temperature control circuit 701a and a negative feedback circuit 701 b.
The temperature control circuit 701a is configured to generate a first electrical signal corresponding to a temperature, and adjust a second electrical signal of a first node according to the first electrical signal; the first node is a connection point between the temperature control circuit 701a and the negative feedback circuit 701 b.
The temperature control circuit 701a generates a first electrical signal corresponding to the temperature: the temperature control circuit 701a may generate a first electrical signal that varies with temperature according to a change in temperature within the circuit, and the first electrical signal increases or decreases when the temperature increases or decreases, and may be a voltage signal or a current signal. The adjusting the second electrical signal of the first node according to the first electrical signal is: since the first node connects the temperature control circuit 701a and the negative feedback circuit 701b, when the first electrical signal changes according to the temperature change, the change of the second electrical signal on the first node is caused, that is, the second signal also changes according to the temperature change; wherein the second electrical signal may be a voltage signal or a current signal.
The negative feedback circuit 701b is configured to provide a negative feedback signal to the radio frequency power amplifier 702 through a second node based on the second electrical signal; the second electrical signal is used for changing the resistance value of the negative feedback circuit 701b to adjust the negative feedback signal related to the resistance value; the second node is a connection point between the negative feedback circuit 701b and the input terminal of the rf power amplifier 702.
The negative feedback signal is used for being input to the radio frequency power amplifier 702, so that the gain of the radio frequency power amplifier 702 changes, the negative feedback signal changes according to the change of the second electrical signal at the first node, and after the negative feedback signal is input to the radio frequency power amplifier 702, the negative feedback signal exerts an adverse effect of temperature on the gain of the radio frequency power amplifier 702, and the change of the gain of the radio frequency power amplifier 702 caused by the influence of temperature can be counteracted. The negative feedback circuit provides a negative feedback signal to the rf power amplifier 702 through a second node based on the second electrical signal 701b as: the resistance value of the negative feedback circuit 701b is controlled by the second electrical signal, which is used to change the resistance value of the negative feedback circuit 701b to adjust the negative feedback signal related to the resistance value. When the second electrical signal changes with the change of temperature, the resistance value of the negative feedback circuit 701b also changes with the second electrical signal, so as to change the negative feedback signal related to the resistance value; one end of the negative feedback circuit 701b is connected to the input end of the radio frequency power amplifier 702 through a second node, and provides a negative feedback signal to the radio frequency power amplifier 702 through the second node, and the other end of the negative feedback circuit 701b is connected to the output end of the power discharger 702 through a third node.
The radio frequency power amplifier 702 includes: at least one input and at least one output for amplifying an input signal; wherein the input terminal is connected to a second node for receiving the input signal; the output end is connected with the negative feedback circuit 701b through a third node and is used for outputting an output signal obtained by amplifying an input signal; wherein the gain of the rf power amplifier 702 is temperature dependent.
The radio frequency power amplifier 702 receives an input signal at an input end, amplifies the input signal and outputs the amplified signal at an output end, wherein the amplified output signal is an output signal of the radio frequency power amplifier 702; the input signals include a negative feedback signal fed back by the negative feedback circuit 701b, a direct current bias signal provided by the bias circuit 703, and a radio frequency signal provided by an external circuit.
The bias circuit 703 includes a bias signal output terminal, and the bias signal output terminal is connected to the second node, and is configured to provide a dc bias signal to the rf power amplifier.
The temperature control circuit 701a includes a temperature control power supply, a steady-state power supply, a clamping circuit, a filter circuit, and an adjustable resistance circuit.
The temperature control power supply is connected with the adjustable resistance circuit through the first node and is used for providing an electric signal which changes along with the temperature to the adjustable resistance circuit; the electric signal of the temperature control power supply is in direct proportion to the absolute temperature.
The steady-state power supply is connected with the adjustable resistance circuit through the first node and is used for providing an electric signal with a fixed value for the adjustable resistance circuit; the electric signal of the steady-state power supply does not change along with the change of the temperature.
In this embodiment, the temperature control power supply and the steady-state power supply are both current sources, Ith represents the temperature control current source, and Iref represents the steady-state current source in fig. 7.
The clamping circuit is connected with the first node and is used for limiting the upper limit of the second electric signal; in fig. 7, Vg Clamp is used, and the Clamp may be a simple Clamp including circuit components such as a diode, a capacitor, and a resistor, or a triode Clamp including circuit components such as a triode, a capacitor, and a resistor, and may fix an electrical signal at a predetermined value to stabilize the electrical signal in the circuit. The clamp circuit with the function of stabilizing the electric signal can be used in the circuit of the embodiment of the utility model.
The filter circuit is connected with the first node and is used for filtering interference signals in the second electric signals; the filter circuit may be comprised of a capacitor, represented in fig. 7 by C1.
The adjustable resistance circuit is connected with the first node and is used for adjusting the second electric signal; the adjustable resistance circuit is formed by connecting an adjustable resistance Rt and a transistor Mm1 in series. The Mm1 can offset the fluctuation of the threshold voltage of the series transistor group in the negative feedback circuit along with the process, and in the application with low requirement on temperature compensation performance, the Mm1 can be removed to save the area of a chip.
The negative feedback circuit 701b includes: the circuit comprises a transistor group circuit, a resistor circuit, a first capacitor and a second capacitor.
The transistor group circuit comprises n transistors connected in series, and the input ends of the transistors are connected with the first node and used for enabling the resistance value of the negative feedback circuit to change along with the change of the second electric signal; the transistor group circuit comprises n series transistors Ms1, Ms2, Msn, n is a positive integer greater than 3. Here, the transistors are metal-oxide-semiconductor (MOS) field effect transistors, a gate of each MOS transistor is connected to the first node, and a gate voltage of each MOS transistor is controlled by a second electrical signal of the first node, that is, Vg.
The resistance circuit comprises n resistors and 1 grounding resistor, wherein the n resistors are connected with the n transistors in parallel and used for providing direct current zero level for the n transistors; wherein n is a positive integer greater than 3; the resistor circuit comprises n resistors connected in parallel with transistors and can be represented as Rs1, Rs2, …, Rsn, and the ground resistor can be represented as Rg. The values of the resistors Rs1, Rs2, … and Rsn are much larger than equivalent on-resistance values Req1, Req2, … and Reqn, the negative feedback characteristic of the negative feedback circuit 701b depends on the total series resistance Req1+ Req2+ … + Reqn, n transistors can be equivalently regarded as n resistors, and a schematic diagram of the transistors equivalent to the resistors is shown in fig. 6. According to the principle of a negative feedback circuit, the larger Vg, the smaller Req and the smaller gain of the radio frequency power amplifier 702 are under the same DC bias condition of the radio frequency power amplifier 702; the smaller Vg, the larger Req, and the larger gain of the RF power amplifier 702.
The first capacitance, which may be denoted as Cf1, between the second node and the transistor group circuit may be used to filter the dc current in the circuit.
The second capacitor, which may be denoted as Cf2, may be located between a third node and the transistor group circuit, and may be used for filtering the dc current in the circuit, where the third node is a connection point between the negative feedback circuit 701b and the output terminal of the rf power amplifier 702.
The radio frequency power amplifier 702 comprises an amplifying transistor, wherein the input end of the amplifying transistor is connected with the second node, the output end of the amplifying transistor is connected with the third node and used for receiving an input signal at the input end and outputting the input signal at the output end after the input signal is amplified, the gain of the radio frequency power amplifier 702 is influenced by the temperature, when the working temperature is increased to a high temperature from a normal temperature, the gain of the radio frequency power amplifier 702 is reduced, and when the working temperature is decreased to a low temperature from the normal temperature, the gain of the radio frequency power amplifier 702 is increased. The normal operating temperature of the rf power amplifier 702 may be set to 25 ℃, which is high when the operating temperature exceeds the normal operating temperature, and low when the operating temperature is lower than the normal operating temperature.
Further, the radio frequency power amplifier 702 may further include dc blocking capacitors Cblock1 and Cblock2 for isolating a dc current of an external circuit. One end of the Cblock1 is connected with the second node, and the other end is connected with an external circuit; one end of the Cblock2 is connected with the third node, and the other end is connected with an external circuit. The end of the negative feedback circuit 701b connected to the second node may also be connected to the end of Cblock1 connected to an external circuit, and the circuit configuration in this case is as shown in fig. 8.
The Transistor of the rf power amplifier 702 may be a Metal-Oxide-Semiconductor (MOS) field effect Transistor, a Heterojunction Bipolar Transistor (HBT), a Bipolar Junction Transistor (BJT), or other circuit elements having an rf power amplifying function.
The bias circuit 703 comprises a current source Ib, a transistor M1 and a resistor R1, wherein the gate of M1 is connected to one end of R1, and the other end of R1 is connected to the gate of M2, so as to provide a dc bias current for the rf power amplifier.
When the working temperature of the radio frequency power amplifying circuit rises from the normal working temperature to a high temperature, the gain of the radio frequency power amplifier 702 is reduced, and the working performance of the radio frequency power amplifying circuit is affected, at the moment, the second electric signal of the first node, namely Vg, is reduced along with the reduction of Ith, as Vg provides grid voltage for the series transistor group in the negative feedback circuit, and when Vg is reduced, the series total resistance Req of the series transistor group is increased, the feedback effect of the negative feedback circuit is weakened, the reduction of the gain of the radio frequency power amplifier 702 is compensated, and the compensation effect of the high-temperature gain is realized.
When the working temperature of the radio frequency power amplifying circuit is reduced to a low temperature from a normal working temperature, the gain of the radio frequency power amplifier 702 is increased, and the working performance of the radio frequency power amplifying circuit is affected, at this time, the second electric signal of the first node, namely Vg, is increased along with the increase of Ith, as Vg provides a gate voltage for the series transistor group in the negative feedback circuit 701b, and when Vg is increased, Req of the series transistor group is reduced, the feedback effect of the negative feedback circuit 701b is enhanced, the increase of the gain of the radio frequency power amplifier 702 is inhibited, and the compensation effect of the low temperature gain is realized.
Example two
In the second embodiment of the present invention, the specific structure of the temperature compensation circuit of the rf power amplifier is as shown in fig. 9, the temperature compensation circuit 901 includes a temperature control circuit 901a and a negative feedback circuit 901b, the temperature control circuit 901a is the same as the specific structure of the temperature control circuit 201 in the first embodiment, and is not repeated here.
The negative feedback circuit 901b comprises an inverter group circuit, a transistor group circuit, a parallel resistor circuit, a first capacitor and a second capacitor;
the inverter group circuit comprises m inverters, the output end of each inverter is connected with the input end of each transistor group in the transistor group circuit, the input end of each inverter is connected with the first node and used for transmitting the second electric signal to the transistor group circuit after being reversed, and m is a positive integer larger than 1.
The m inverters may be denoted as a1, a2, …, Am, each having a power supply terminal connected to the first node, Vg as an input signal. The outputs of inverters a1, a2, …, Am are connected to the gates of the corresponding transistor groups. The inverters a1, a2, … and Am can be controlled by logic signals Ctrl1, Ctrl2, … and Ctrl m, so that various functions of adjusting feedback resistance values can be realized.
The transistor group circuit comprises m parallel transistor groups, each transistor group comprises n series transistors, and the resistance value of the transistor group circuit is changed along with the change of a second electric signal; the grid electrode of each transistor group is connected with the output end of the corresponding phase inverter, the m parallel transistor groups are connected with the first capacitor and the second capacitor together, and a negative feedback path is formed at the output end and the input end of the radio frequency power amplifier.
The resistance circuit comprises m resistance groups and 1 grounding resistance, each resistance group in the m resistance groups comprises n resistances, and the n resistances are connected with n transistors in each transistor group in the transistor group circuit in parallel and used for providing direct current zero level for the m parallel transistor groups; the n transistors in each path can be equivalent to n resistors and are connected with the n resistors in each path in parallel, the resistance of each path depends on the sum of the equivalent on-resistance of each path of transistor, and the total resistance of the m paths is the total resistance of each path of resistors after being connected in parallel. Wherein m is a positive integer greater than 1, and n is a positive integer greater than 3.
The first capacitor is positioned between the second node and the transistor group circuit;
the second capacitor is positioned between the third node and the transistor group circuit;
the maximum voltage output by each phase inverter in the negative feedback circuit is equal to the voltage of the power supply terminal, and when Vg changes along with the temperature, the maximum voltage output by the phase inverters also changes along with the temperature, so that the temperature compensation effect on the radio frequency power amplification circuit is realized.
The embodiment of the present invention provides a second radio frequency power amplifying circuit, wherein the specific structure of the radio frequency power amplifying circuit is as shown in fig. 9, and the radio frequency power amplifying circuit includes: a temperature compensation circuit 901, a radio frequency power amplifier 902 and a bias circuit 903.
The temperature compensation circuit 901 includes: a temperature control circuit 901a and a negative feedback circuit 901 b;
the temperature control circuit 901a is configured to generate a first electrical signal corresponding to a temperature, and adjust a second electrical signal of a first node according to the first electrical signal; the first node is a connection point between the temperature control circuit 901a and the negative feedback circuit 901 b;
wherein the negative feedback circuit 901b is configured to provide a negative feedback signal to the radio frequency power amplifier through a second node based on the second electrical signal; the second electrical signal is used for changing the resistance value of the negative feedback circuit 901b to adjust the negative feedback signal related to the resistance value; the second node is an end point of the negative feedback circuit connected with the input end of the radio frequency power amplifier 902; the negative feedback signal is used for inputting the rf power amplifier, so that the gain of the rf power amplifier 902 is changed.
The radio frequency power amplifier 902 includes: at least one input and at least one output for amplifying an input signal;
wherein the input terminal is connected to a second node for receiving the input signal; the output end is connected with the negative feedback circuit through a third node and is used for outputting an output signal amplified by an input signal; wherein the gain of the rf power amplifier 902 is temperature dependent.
The bias circuit 903 comprises a bias signal output terminal connected to the second node, and configured to provide a dc bias signal to the rf power amplifier 902.
The rf power amplifier 902 and the bias circuit 903 are the same as the rf power amplifier 202 and the bias circuit 203 in the first embodiment, and detailed description thereof is omitted here.
EXAMPLE III
In the third embodiment of the present invention, the specific structure of the rf power amplifier circuit is as shown in fig. 10, and the temperature compensation circuit 1001 and the bias circuit 1003 can be implemented in any one of the first embodiment and the second embodiment, which is not described herein again.
The rf power amplifier 1003 includes n amplifying transistors, the n amplifying transistors are connected in series, an input terminal of each transistor is connected to the second node, the n transistors may be represented as M21, M22, …, and M2k, where k is a positive integer greater than 1, a source of M2k is connected to the third node, a drain of M21 is grounded, and a power gain of the rf power amplifier is a total gain after the amplifying transistors are connected in series.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention.
Claims (9)
1. A temperature compensation circuit for a radio frequency power amplifier, the temperature compensation circuit comprising: a temperature control circuit and a negative feedback circuit; wherein,
the temperature control circuit is used for generating a first electric signal corresponding to the temperature and adjusting a second electric signal of a first node according to the first electric signal; the first node is a connection point of the temperature control circuit and the negative feedback circuit;
the negative feedback circuit is used for providing a negative feedback signal to the radio frequency power amplifier through a second node based on the second electric signal; the second electric signal is used for changing the resistance value of the negative feedback circuit so as to adjust the negative feedback signal related to the resistance value; the second node is a connection point of the negative feedback circuit and the input end of the radio frequency power amplifier;
wherein, the negative feedback signal is used for inputting the radio frequency power amplifier, so that the gain of the radio frequency power amplifier is changed.
2. The circuit of claim 1, wherein the temperature control circuit comprises: the temperature control circuit comprises a temperature control power supply, a steady-state power supply, a clamping circuit, a filter circuit and an adjustable resistance circuit; wherein,
the temperature control power supply is connected with the adjustable resistance circuit through the first node and is used for providing an electric signal which changes along with the temperature to the adjustable resistance circuit;
the steady-state power supply is connected with the adjustable resistance circuit through the first node and is used for providing an electric signal with a fixed value for the adjustable resistance circuit;
the clamping circuit is connected with the first node and is used for limiting the upper limit of the second electric signal;
the filter circuit is connected with the first node and is used for filtering interference signals in the second electric signals;
the adjustable resistance circuit is connected with the first node and used for adjusting the second electric signal.
3. The circuit of claim 1, wherein the negative feedback circuit comprises: the circuit comprises a transistor group circuit, a resistor circuit, a first capacitor and a second capacitor; wherein,
the transistor group circuit comprises n transistors connected in series, and the grid electrodes of the transistors are connected with the first node and used for enabling the resistance value of the negative feedback circuit to change along with the change of the second electric signal;
the resistance circuit comprises n resistors and 1 grounding resistor, wherein the n resistors are connected with the n transistors in parallel and used for providing direct current zero level for the n transistors; wherein n is a positive integer greater than 3;
the first capacitor is positioned between the second node and the transistor group circuit;
the second capacitor is positioned between a third node and the transistor group circuit;
the third node is a connection point of the negative feedback circuit and the output end of the radio frequency power amplifier.
4. The circuit of claim 1, wherein the negative feedback circuit comprises: the circuit comprises an inverter group circuit, a transistor group circuit, a parallel resistor circuit, a first capacitor and a second capacitor; wherein,
the inverter group circuit comprises m inverters, the output end of each inverter is connected with the input end of each transistor group in the transistor group circuit, and the input end of each inverter is connected with the first node and used for transmitting the second electric signal to the transistor group circuit after being inverted;
the transistor group circuit comprises m parallel transistor groups, each transistor group comprises n series transistors, and the resistance value of the transistor group circuit is changed along with the change of a second electric signal;
the resistance circuit comprises m resistance groups and 1 grounding resistance, each resistance group in the m resistance groups comprises n resistances, and the n resistances are connected with n transistors in each transistor group in the transistor group circuit in parallel and used for providing direct current zero level for the m parallel transistor groups;
the first capacitor is positioned between the second node and the transistor group circuit;
the second capacitor is positioned between a third node and the transistor group circuit;
wherein m is a positive integer greater than 1, n is a positive integer greater than 3, and the third node is a connection point between the negative feedback circuit and the output end of the radio frequency power amplifier.
5. A radio frequency power amplification circuit, the radio frequency power amplification circuit comprising: a temperature compensation circuit and a radio frequency power amplifier; wherein,
the temperature compensation circuit includes: a temperature control circuit and a negative feedback circuit; wherein,
the temperature control circuit is used for generating a first electric signal corresponding to the temperature and adjusting a second electric signal of a first node according to the first electric signal; the first node is a connection point of the temperature control circuit and the negative feedback circuit;
the negative feedback circuit is used for providing a negative feedback signal to the radio frequency power amplifier through a second node based on the second electric signal; the second electric signal is used for changing the resistance value of the negative feedback circuit so as to adjust the negative feedback signal related to the resistance value; the second node is an end point of the negative feedback circuit connected with the input end of the radio frequency power amplifier;
the negative feedback signal is used for inputting the radio frequency power amplifier so that the gain of the radio frequency power amplifier is changed;
the radio frequency power amplifier comprises:
at least one input and at least one output for amplifying an input signal;
wherein the input terminal is connected to the second node for receiving the input signal;
the output end is connected with the negative feedback circuit through a third node and is used for outputting an output signal amplified by an input signal; wherein the gain of the radio frequency power amplifier is temperature dependent.
6. The circuit of claim 5, further comprising: a bias circuit;
the bias circuit comprises a bias signal output end, and the bias signal output end is connected with the second node and used for providing a direct current bias signal for the radio frequency power amplifier.
7. The circuit of claim 5, wherein the radio frequency power amplifier comprises: and the input end of the amplifying transistor is connected with the second node.
8. The circuit of claim 5, wherein the radio frequency power amplifier comprises: and the n amplifying transistors are connected in series, and the input end of the first amplifying transistor is connected with the second node.
9. The circuit of claim 5, wherein the radio frequency power amplifier further comprises: and the DC blocking capacitor is used for connecting the second node and the negative feedback circuit.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720680032.XU CN207150540U (en) | 2017-06-12 | 2017-06-12 | A kind of temperature-compensation circuit of radio-frequency power amplifier |
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| CN201720680032.XU CN207150540U (en) | 2017-06-12 | 2017-06-12 | A kind of temperature-compensation circuit of radio-frequency power amplifier |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111416581A (en) * | 2019-01-08 | 2020-07-14 | 上海川土微电子有限公司 | Temperature stabilizing circuit of radio frequency power amplifier |
| CN112187192A (en) * | 2020-10-15 | 2021-01-05 | 广东工业大学 | Self-adaptive circuit structure of radio frequency power amplifier and radio frequency power amplifier |
| CN113852354A (en) * | 2020-06-26 | 2021-12-28 | 恩智浦美国有限公司 | Amplifier circuit with temperature compensation |
-
2017
- 2017-06-12 CN CN201720680032.XU patent/CN207150540U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111416581A (en) * | 2019-01-08 | 2020-07-14 | 上海川土微电子有限公司 | Temperature stabilizing circuit of radio frequency power amplifier |
| CN113852354A (en) * | 2020-06-26 | 2021-12-28 | 恩智浦美国有限公司 | Amplifier circuit with temperature compensation |
| CN112187192A (en) * | 2020-10-15 | 2021-01-05 | 广东工业大学 | Self-adaptive circuit structure of radio frequency power amplifier and radio frequency power amplifier |
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Address after: 510663 8th floor, building C2, Chuangxin building, No. 182, Kexue Avenue, Huangpu District, Guangzhou, Guangdong Patentee after: Guangzhou Huizhi Microelectronics Co.,Ltd. Address before: 510663 unit c3-802, innovation building, 182 science Avenue, Science City, Guangzhou high tech Industrial Development Zone, Guangdong Province Patentee before: SMARTER MICROELECTRONICS (GUANG ZHOU) Co.,Ltd. |