CN206635413U - A kind of plasma CVD device - Google Patents
A kind of plasma CVD device Download PDFInfo
- Publication number
- CN206635413U CN206635413U CN201720429866.3U CN201720429866U CN206635413U CN 206635413 U CN206635413 U CN 206635413U CN 201720429866 U CN201720429866 U CN 201720429866U CN 206635413 U CN206635413 U CN 206635413U
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- CN
- China
- Prior art keywords
- arc
- post
- direct
- column conductive
- vacuum chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005268 plasma chemical vapour deposition Methods 0.000 title claims abstract description 12
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims 1
- 238000000576 coating method Methods 0.000 abstract description 10
- 229910003460 diamond Inorganic materials 0.000 abstract description 9
- 239000010432 diamond Substances 0.000 abstract description 9
- 239000000126 substance Substances 0.000 abstract description 7
- 239000012808 vapor phase Substances 0.000 abstract description 3
- 238000010891 electric arc Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052571 earthenware Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000007777 multifunctional material Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model provides a kind of plasma CVD device, including vacuum chamber, the first power supply, second source, product frame is provided with the vacuum chamber, both ends are respectively arranged with the cathode portion being connected with the first power supply and anode, direct-current arc arc column conductive post is provided between the cathode portion and anode, both ends on the outside of the vacuum chamber are respectively arranged with the field coil being connected with second source, the direct-current arc arc column conductive post includes column cap and post tail, and more arc column conductive posts are provided between column cap and the post tail.The change of the direct-current arc arc column conductive post contributes to the raising of chemical vapor-phase depositor reliability, increase response area, because the stability of negative electrode is improved, thus the quality of the diamond coatings prepared by it can also obtain significant improvement.
Description
Technical field
A kind of diamond coating technique device is the utility model is related to, in particular, provides a kind of plasma enhanced chemical vapor
Precipitation equipment, it can be applied to product surface coated diamond coating.
Background technology
There are many unique characteristics with diamond coatings prepared by chemical gaseous phase depositing process, such as high rigidity, high resiliency
Modulus, low-friction coefficient, high heat conductance, wide optics are a kind of extremely excellent through wave band, high dielectric property, high chemical inertness etc.
Different multifunctional material, had a wide range of applications in the every field of national economy.
Diversified chemical gaseous phase depositing process can be used by preparing diamond coatings, and its most important feature is that its is each
From plasma-generating technologies.Heat wire method using a large amount of parallel arrangeds, be heated to the wire of red-hot state as etc. from
Daughter source.Its shortcoming be the heated filament group of enormous amount stability and the life-span it is relatively low.Microwave method is produced using high-frequency electromagnetic wave
The plasma of raw electrodeless discharge, its shortcoming is equipment and operating cost is high and the area of plasma caused by being capable of is small.
The high speed arc spraying that DC arc jet method is flowed by spurting produces plasma, and its shortcoming being capable of caused plasma
Area is small and the electric arc of high speed injection can produce very high thermal shock to coated product, and its temperature hardly results in control.
Another method for preparing diamond coatings is so-called heavy current DC electric arc plasma chemical vapor deposition
Method.In this process, DC arc discharge occurs between negative and positive the two poles of the earth apart from each other and forms an electric arc arc column, and by
The product of coating is placed on around electric arc arc column.Plasma caused by electric arc arc column excites to reacting gas realization, from
And diamond coatings can be deposited on the surface of product.
Utility model content
The utility model provides a kind of plasma CVD device, and life-span and the structure for extending negative electrode are steady
It is qualitative, so as to directly enhance the reliability of whole chemical vapor-phase depositor.
A kind of plasma CVD device, including vacuum chamber, the first power supply, second source, the vacuum chamber
Inside be provided with product frame, both ends are respectively arranged with the cathode portion being connected with the first power supply and anode, the cathode portion and
It is provided with direct-current arc arc column conductive post between anode, the both ends on the outside of the vacuum chamber are respectively arranged with to be connected with second source
The field coil connect, the direct-current arc arc column conductive post include column cap and post tail, are provided between column cap and the post tail more
Root arc column conductive post.
The more arc column conductive posts are evenly distributed on the cross section of same circle.
The landing device of taper is provided with the post tail, the landing device is between more arc column conductive posts.
The quantity of the arc column conductive post is 4-16 roots.
The product sets up and is equipped with rotating device, for controlling product towards the direction of direct-current arc arc column conductive post.
The change of the direct-current arc arc column conductive post contributes to heavy current DC electric arc plasma chemical vapor deposition
The raising of device reliability, because the stability of negative electrode is improved, thus the quality of the diamond coatings prepared by it
Significant improvement can be obtained.
Brief description of the drawings
Fig. 1 is the structural representation of the plasma CVD device.
Embodiment
The utility model provides a kind of plasma CVD device, as shown in figure 1, including cathode portion 1,
Anode 8, vacuum chamber 2, vacuum pump system 3, pressure monitoring and controlling device 4, direct-current arc arc column conductive post 9, product frame 10, the first power supply
5th, second source 11, field coil 12 and field coil 13, cathode portion 1 and anode 8 are in the two of the axis of cylindrical vacuum chamber 2
End.The both sides up and down that a pair of magnetic field coil 12,13 is coaxially in outside vacuum chamber 2.Vacuum chamber 2 is surveyed with vacuum pump system 3, pressure
Control device 4 is connected by vacuum line.
Cathode portion 1 is by cathode rod 6, cathode 7, protective gas passage body, reaction gas passage body and insulator institute
Composition, is negative electrode spout 16 below protective gas passage body, reaction gas passage body, cathode rod 6 as made by W metals,
It is and different and different according to the intensity of the electron stream of required transmitting.Cathode 7, protective gas passage body, reaction gas passage body
Between insulated by insulator.
At the axis of vacuum chamber 2, a direct-current arc arc column is formed between cathode portion 1 and anode 8.Power supply 5, power supply 11
Respectively electric energy is provided to direct-current arc arc column and field coil 12,13.The product of coated can sequentially be placed in direct-current arc arc
On product frame 10 around post conductive post 9.
Cathode rod 6 is the emitter of forceful electric power subflow made of W, and it is heated to high temperature while forceful electric power subflow flows through
State, thus itself possess the ability of transmitting forceful electric power subflow.Cathode 7 is the path that cathode rod 6 provides electric current, while right
Cathode rod 6 plays a part of cooling.Required protective gas is provided for cathode rod 6 within protective gas passage body, the latter is also
There is stable electric arc.The reacting gas flowed through between reaction gas passage body and protective gas passage body will be directed into
Electric arc arc column, add its chemism.In addition, this air-flow also plays a part of cooling to electric arc arc column conductive post, so as to
Keep it in the center of negative electrode spout 16.The effect of negative electrode spout 16 is formed electric arc arc column is maintained itself
Axis on.
The direct-current arc arc column conductive post 9 is made up of the ceramic and built-in metal of outside, passes through built-in metal
The change of direct-current arc is carried out, the quantity of the arc column conductive post is 4-16 roots, and product is set up and is equipped with rotating device 14.
Direct-current arc arc column conductive post 9 can also be made earthenware, it is then internal that spring is set, locate for installing and waiting
The same bonding jumper of the metal of reason, the metal participates in reaction simultaneously, so as to increase efficiency.
Therefore, the change of above-mentioned direct-current arc arc column conductive post 9 can directly improve whole heavy current direct current-arc plasma
The reliability of body chemical vapor phase growing apparatus, improve the quality of its diamond coatings deposited.
Claims (5)
- A kind of 1. plasma CVD device, it is characterised in that：Including vacuum chamber, the first power supply, second source, institute State and product frame is provided with vacuum chamber, both ends are respectively arranged with the cathode portion being connected with the first power supply and anode, described the moon It is provided with direct-current arc arc column conductive post between pole part and anode, the both ends on the outside of the vacuum chamber are respectively arranged with and second The field coil that power supply is connected, the direct-current arc arc column conductive post include column cap and post tail, between column cap and the post tail It is provided with more arc column conductive posts.
- 2. plasma CVD device according to claim 1, it is characterised in that：The more arc columns conduction Post is evenly distributed on the cross section of same circle.
- 3. plasma CVD device according to claim 1, it is characterised in that：It is provided with the post tail The landing device of taper, the landing device is between more arc column conductive posts.
- 4. plasma CVD device according to claim 1, it is characterised in that：The arc column conductive post Quantity is 4-16 roots.
- 5. plasma CVD device according to claim 1, it is characterised in that：The product sets up and is equipped with Rotating device, for controlling product towards the direction of direct-current arc arc column conductive post.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720429866.3U CN206635413U (en) | 2017-04-19 | 2017-04-19 | A kind of plasma CVD device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720429866.3U CN206635413U (en) | 2017-04-19 | 2017-04-19 | A kind of plasma CVD device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206635413U true CN206635413U (en) | 2017-11-14 |
Family
ID=60246418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720429866.3U Expired - Fee Related CN206635413U (en) | 2017-04-19 | 2017-04-19 | A kind of plasma CVD device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206635413U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110856332A (en) * | 2019-07-09 | 2020-02-28 | 四川铁匠科技有限公司 | Cathode structure of arc laminar plasma beam generator |
-
2017
- 2017-04-19 CN CN201720429866.3U patent/CN206635413U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110856332A (en) * | 2019-07-09 | 2020-02-28 | 四川铁匠科技有限公司 | Cathode structure of arc laminar plasma beam generator |
| CN110856332B (en) * | 2019-07-09 | 2024-02-27 | 四川铁匠科技有限公司 | Cathode structure of electric arc laminar flow plasma beam generator |
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171114 Termination date: 20210419 |
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| CF01 | Termination of patent right due to non-payment of annual fee |