CN205335247U - Face down chip module - Google Patents

Abstract

A flip-chip module, including a carrier, a chip, a conductive bump and a heat sink, the lower surface of the chip is provided with several conductive bumps, the chip is electrically connected to the carrier through the conductive bump, the The heat dissipation device is insulated from the carrier and arranged under the carrier. The heat dissipation device includes a P-type semiconductor part, an N-type semiconductor part, and a power supply. The P-type semiconductor part, the N-type semiconductor part, and the power supply are connected in series in sequence. The P The heat absorbing surfaces of the P-type semiconductor and the N-type semiconductor are arranged close to the carrier, and the heat releasing surfaces of the P-type semiconductor and the N-type semiconductor are arranged away from the carrier. The utility model effectively improves the heat dissipation efficiency of the flip-chip module by utilizing the Peltier effect accompanied by the heat absorption process and the heat release process when the current flows through different semiconductor interfaces, and actively absorbs and releases heat.

Description

A flip-chip module

technical field

The utility model relates to an LED chip, in particular to a flip chip module.

Background technique

A flip-chip semiconductor package is a package structure electrically connected by flip-chip, which electrically connects the active surface of at least one chip to the surface of a substrate through a plurality of conductive bumps. This design can not only greatly reduce the volume of the package, but also make the ratio of the semiconductor chip and the substrate closer. At the same time, it also eliminates the design of bonding wires, reduces impedance and improves electrical properties, so it has become the mainstream packaging technology for next-generation chips and electronic components. It will also be the industry's preferred LED light source. However, as high-power LED lighting is popularized and promoted. The heat dissipation problem of semiconductors still exists, and how to solve the high heat generated by high-power lighting is another major problem facing the industry. At present, the most common heat dissipation device is still aluminum-based heat dissipation. This kind of heat dissipation is to directly contact the aluminum base surface with the LED light source through heat-conducting silicone grease. The heat generated by the LED light source is conducted to the aluminum-based heat sink, and then the heat pass it on. The disadvantage of this heat dissipation device is that the structure is relatively bulky, the heat dissipation volume is large, and the weight is heavy. The main heat dissipation method is passive conduction heat dissipation. The heat dissipation efficiency is low and the heat dissipation effect is poor. The higher the power of the LED light source, the larger the volume and weight of the heat dissipation device, and the poor heat dissipation effect directly affects the life of the LED light source.

Utility model content

The purpose of the utility model is to overcome the shortcomings of the prior art and provide a flip-chip module with good heat dissipation effect.

The purpose of the utility model is achieved through the following technical solutions: a flip-chip module, including a carrier, a chip, a conductive bump and a heat dissipation device, the lower surface of the chip is provided with several conductive bumps, and the chip passes through The conductive bump is electrically connected to the carrier, and the heat dissipation device is arranged under the carrier insulated from the carrier. The heat dissipation device includes a P-type semiconductor part, an N-type semiconductor part and a power supply. The P-type semiconductor part, The N-type semiconductor part and the power supply are serially connected in series, the heat-absorbing surfaces of the P-type semiconductor and the N-type semiconductor are arranged close to the carrier, and the heat-dissipating surfaces of the P-type semiconductor and the N-type semiconductor are arranged away from the carrier.

Preferably, encapsulation glue is also included, the bottom of the chip is filled with encapsulation glue, and the encapsulation glue is filled in the gap between the chip and the carrier.

Preferably, an insulator is also included, the insulator is a ceramic sheet, and the insulator is arranged between the heat sink and the carrier. The upper surface of the insulating member is bonded and fixed under the bearing member through a heat-conducting film.

Preferably, the P-type semiconductor part includes a P-type heat absorbing part and a P-type heat releasing part, one end of the P-type heat absorbing part is fixed on the lower surface of the insulating part, and the P-type heat releasing part is set away from the insulating part The N-type semiconductor part includes an N-type heat absorbing part and an N-type heat releasing part, one end of the N-type heat absorbing part is fixed on the lower surface of the insulating part, and the N-type heat releasing part is arranged away from the insulating part; The P-type heat absorbing part, the P-type heat releasing part, the power supply, the N-type heat absorbing part and the N-type heat releasing part are connected in series in sequence. The power supply described is a DC power supply.

Preferably, metal plates are further arranged on the heat dissipation surfaces of the P-type semiconductor part and the N-type semiconductor part.

The utility model has the following advantages:

1. By adopting flip-chip semiconductors and electrically connecting them to the carrier through conductive bumps, the overall volume and weight of the chip are greatly reduced. At the same time, there is no need to use welding wires, which reduces impedance and improves electrical properties. The overall structure of the chip is optimized, and the flip-chip module design is further optimized.

2. By setting the cooling device, the heat generated by the chip will be transferred out through the cooling device. At the same time, the heat dissipation device includes a P-type semiconductor part, an N-type semiconductor part and a power supply, and utilizes the Peltier effect that is accompanied by an endothermic process and an exothermic process when current flows through different semiconductor interfaces. Moreover, the heat-absorbing surfaces of the P-type semiconductor part and the N-type semiconductor part are arranged close to the side of the chip, which can quickly and effectively absorb the heat generated by the chip, while the heat-dissipating surface is far away from the chip, so that the heat absorbed by the heat-absorbing surface can be effectively dissipated. Through active heat absorption and release, the heat dissipation efficiency of the flip chip module is effectively improved.

3. By arranging an insulating member between the heat sink and the carrier, the electrical connection of the flip chip can be better protected, and problems such as short circuit with the electrical connection of the heat sink can be avoided.

Description of drawings

FIG. 1 is a schematic diagram of a first embodiment of the flip-chip module of the present invention.

detailed description

Below in conjunction with accompanying drawing and specific embodiment the utility model is described in further detail.

A flip-chip 4 module, including a carrier 5, a chip 4, a conductive bump 1 and a heat dissipation device, the lower surface of the chip 4 is provided with several conductive bumps 1, and the chip 4 is electrically connected through the conductive bump 1. Sexually connected on the carrier 5, the heat dissipation device is insulated from the carrier 5 and arranged below the carrier 5, the heat dissipation device includes 7 parts of P-type semiconductors, 8 parts of N-type semiconductors and power supply 2, the P-type semiconductor 7 parts, 8 parts of N-type semiconductors, and power supply 2 are connected in series in sequence, the heat-absorbing surfaces of the P-type semiconductor 7 and N-type semiconductor 8 are arranged close to the carrier 5, and the heat-releasing surfaces of the P-type semiconductor 7 and N-type semiconductor 8 Set away from the carrier 5 .

By using flip-chip semiconductors 4 and electrically connecting to the carrier 5 through the conductive bumps 1 , the overall volume and weight of the chips 4 are greatly reduced. At the same time, there is no need to use welding wires, which reduces impedance and improves electrical properties. The overall structure of the chip 4 is optimized, and the design of the flip chip 4 module is further optimized. By setting the cooling device, the heat generated by the chip 4 is transferred out through the cooling device. At the same time, the heat dissipation device includes 7 P-type semiconductors, 8 N-type semiconductors and a power supply 2, and utilizes the Peltier effect that is accompanied by an endothermic process and an exothermic process when current flows through different semiconductor interfaces. Moreover, the heat-absorbing surfaces of the 7 parts of the P-type semiconductor and the 8 parts of the N-type semiconductor are arranged close to the side of the chip 4, which can quickly and effectively absorb the heat generated by the chip 4. Heat is dissipated efficiently. Through active heat absorption and release, the heat dissipation efficiency of the flip-chip 4 module is effectively improved.

Preferably, it also includes encapsulation glue 3 , the bottom of the chip 4 is filled with the encapsulation glue 3 , and the encapsulation glue 3 fills the gap between the chip 4 and the carrier 5 . By filling the gap between the chip 4 and the carrier 5 with the encapsulant 3 , the conductive bump 1 and the chip 4 can be effectively protected, preventing delamination of the chip 4 or the 5 carrier parts of the chip 4 and the inner layer of the chip 4 .

Preferably, an insulator 6 is also included, and the insulator 6 is a ceramic sheet, and the insulator 6 is arranged between the heat sink and the carrier 5 . The upper surface of the insulator 6 is bonded and fixed below the carrier 5 by a heat-conducting film. By disposing the insulator 6 between the heat sink and the carrier 5, the electrical connection of the flip chip 4 can be better protected, and problems such as a short circuit in the electrical connection with the heat sink can be avoided. At the same time, the insulator 6 made of ceramic material has good insulation effect on the one hand, and ceramics has a good heat dissipation effect on the other hand, so the heat generated by the chip 4 can be quickly transferred to the heat dissipation device through the heat sink.

Preferably, the P-type semiconductor part 7 includes a P-type heat absorbing part and a P-type heat releasing part, one end of the P-type heat absorbing part is fixed on the lower surface of the insulating member 6, and the P-type heat releasing part is far away from the insulating part. The part 6 is set; the N-type semiconductor 8 part includes an N-type heat absorbing part and an N-type heat releasing part, one end of the N-type heat absorbing part is fixed on the lower surface of the insulating part 6, and the N-type heat releasing part is away from The insulator 6 is provided; the P-type heat absorbing part, the P-type heat releasing part, the power supply 2, the N-type heat absorbing part and the N-type heat releasing part are connected in series in sequence. The power supply 2 is a DC power supply 2 .

Preferably, a metal plate 9 is also provided on the heat dissipation surfaces of the P-type semiconductor 7 and the N-type semiconductor 8 . By disposing the insulator 6 between the heat sink and the carrier 5, the electrical connection of the flip chip 4 can be better protected, and problems such as a short circuit in the electrical connection with the heat sink can be avoided.

The above descriptions are only preferred embodiments of the present utility model, and are not intended to limit the present utility model. Any modifications, equivalent replacements, improvements, etc. within the spirit and principles of the present utility model shall include Within the protection scope of the utility model.

Claims (7)

1. A flip-chip module, characterized in that: it includes a carrier, a chip, a conductive bump and a heat sink, the lower surface of the chip is provided with several conductive bumps, and the chip is electrically connected by the conductive bump On the carrier, the heat dissipation device is insulated from the carrier and arranged under the carrier, the heat dissipation device includes a P-type semiconductor part, an N-type semiconductor part and a power supply, and the P-type semiconductor part, the N-type semiconductor part and the power supply In series in sequence, the heat absorbing surfaces of the P-type semiconductor and the N-type semiconductor are arranged close to the carrier, and the heat releasing surfaces of the P-type semiconductor and the N-type semiconductor are arranged away from the carrier. 2 . The flip chip module according to claim 1 , further comprising encapsulant, the bottom of the chip is filled with encapsulant, and the encapsulant is filled in the gap between the chip and the carrier. 3 . The flip chip module according to claim 1 , further comprising an insulator, the insulator is a ceramic sheet, and the insulator is disposed between the heat sink and the carrier. 4 . 4. The flip-chip module according to claim 3, wherein the P-type semiconductor part comprises a P-type heat absorbing part and a P-type heat releasing part, and one end of the P-type heat absorbing part is fixed on an insulating The lower surface of the part, the P-type heat radiation part is set away from the insulating part; the N-type semiconductor part includes an N-type heat absorption part and an N-type heat radiation part, and one end of the N-type heat absorption part is fixed on the insulating part On the lower surface, the N-type heat dissipation part is set away from the insulating part; the P-type heat absorption part, the P-type heat dissipation part, the power supply, the N-type heat absorption part and the N-type heat dissipation part are connected in series in sequence. 5 . The flip-chip module according to claim 3 , wherein the upper surface of the insulating member is bonded and fixed under the carrier member by a heat-conducting film. 6 . 6. The flip-chip module according to claim 1, wherein the power supply is a DC power supply. 7. The flip-chip module according to claim 4, characterized in that: metal plates are further arranged on the heat dissipation surfaces of the P-type semiconductor part and the N-type semiconductor part.