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CN1808192A - Hybrid integrated optical circuit chip employing double-layer structure - Google Patents

Hybrid integrated optical circuit chip employing double-layer structure Download PDF

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Publication number
CN1808192A
CN1808192A CN 200510011211 CN200510011211A CN1808192A CN 1808192 A CN1808192 A CN 1808192A CN 200510011211 CN200510011211 CN 200510011211 CN 200510011211 A CN200510011211 A CN 200510011211A CN 1808192 A CN1808192 A CN 1808192A
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optical circuit
optical
light
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陈鹏
刘育梁
李芳�
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Institute of Semiconductors of CAS
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Abstract

本发明涉及集成光路芯片技术领域,特别是一种采用双层结构的混合集成光路芯片。该混合集成光路芯片中,将混合集成光路芯片分为器件层与光线路层,光在两层之间典型的光行进路线为:由光纤输入、行进至光线路层、行进至器件层通过独立器件、行进至光线路层、行进至器件层通过独立器件、行进至光线路层、……、行进至器件层通过独立器件、行进至光线路层、行进至光纤。器件层与光线路层的光连接,采用模斑转换结构扩大模斑尺寸、光栅耦合器或者光子晶体结构实现光的大角度拐弯来实现光在器件层和光连线层之间大对准容差的垂直光连接。

Figure 200510011211

The invention relates to the technical field of integrated optical circuit chips, in particular to a hybrid integrated optical circuit chip adopting a double-layer structure. In the hybrid integrated optical circuit chip, the hybrid integrated optical circuit chip is divided into a device layer and an optical circuit layer. The typical light travel route between the two layers is: input from the optical fiber, travel to the optical circuit layer, travel to the device layer through an independent device, travel to optical line layer, travel to device layer through independent device, travel to optical circuit layer, ..., travel to device layer through independent device, travel to optical circuit layer, travel to optical fiber. For the optical connection between the device layer and the optical line layer, the mode spot conversion structure is used to expand the mode spot size, and the grating coupler or photonic crystal structure realizes the large-angle bending of light to achieve a large alignment tolerance of light between the device layer and the optical wiring layer vertical light connections.

Figure 200510011211

Description

Adopt double-deck hybrid integrated optical circuit chip
Technical field
The present invention relates to the integrated optical circuit chip technical field, the double-deck hybrid integrated optical circuit chip of particularly a kind of employing.
Background technology
Hybrid integrated optical circuit adopts the various function elements of being made by different materials, it is integrated on the micro optical platform integrated chip that form stable performance, is easy to control.Mixing the design that is integrated into each individual devices provides the more freedom degree, and the device of difference in functionality can select only separately material and optimised process to obtain best performance respectively.And the monolithic integrated optical circuit, owing to make optimal material, the optimum dimension difference of each individual devices, the compromise of having to bring device performance.Therefore, mixing integrated is have practical value most in two kinds of schemes of integrated optical circuit a kind of at present.
Gordian technique in the hybrid integrated optical circuit is to realize sheet glazing interconnection efficiently, promptly realizes high alignment tolerance, low-loss glazing interconnection.The realization of efficient sheet glazing interconnection can be given full play to the optimum performance of each discrete device in the integrated chip, shorten the lead time of integrated chip significantly, even the similar individual devices product of realizing different vendor in the integrated chip after forming unified sheet glazing interconnect standards is in the future efficiently replaced on the sheet, further reduce the integrated chip cost, enlarge integrated scale, promote that the increase of integrated chip function is perfect.
Traditional hybrid integrated optical circuit chip adopts single layer structure, all individual devices all are fixed on the same micro optical platform, realize that by the waveguiding structure of processing on the micro optical platform light connects between each individual devices, described waveguiding structure and individual devices adopt the mode of end face to the end face coupling.End face needs the accurate location of space three-dimensional to aim at the coupling of end face, and this has proposed bigger challenge to the technological process that individual devices is fixed to micro optical platform.
Summary of the invention
Therefore the objective of the invention is to propose a kind of technical scheme of utilizing double-decker to realize hybrid integrated optical circuit chip, by individual devices and light transmission waveguide are separately positioned on device layer and optical link layer, reduced the accuracy requirement that individual devices is fixed to the technological process of micro optical platform effectively.
The applicant has invented a kind of technical scheme of utilizing double-decker to realize hybrid integrated optical circuit chip.Especially can make and easily realize the integrated of individual devices on the sheet in the hybrid integrated optical circuit chip.
The principal character of this technical scheme is, in this mixing Integrated Solution hybrid integrated optical circuit chip is divided into device layer and optical link layer, typical light course is: by the optical fiber input, march to the optical link layer, march to device layer by individual devices, march to the optical link layer, march to device layer by individual devices, march to the optical link layer ..., march to device layer by individual devices, march to the optical link layer, march to optical fiber.By individual devices and light transmission waveguide are separately positioned on device layer and optical link layer, reduced the accuracy requirement that individual devices is fixed to the technological process of micro optical platform effectively.
Device layer, it is characterized in that this layer for bonding the silicon optical table of individual devices, this layer mainly finished the various functions of integrated optical circuit and realized by being bonded in individual devices on the platform.This layer adopts the silicon optical table, processes microstructure through fine processes such as wet method or dry etchings, and the positioning reference of individual devices is provided, and individual devices is integrated on this platform by methods such as flip chip bondings.The individual devices that device layer is integrated is turned round in the wide-angle that input and output waveguide part has all adopted mould spot transformational structure to enlarge structures realization light such as mode spot-size, grating coupler or photonic crystal; From the light of optical link layer by input end grating coupler or structure such as photonic crystal and mould spot transformational structure after enter the individual devices main part, through after structure such as grating coupler by output terminal or photonic crystal after the individual devices main part and the mould spot transformational structure to the optical link Es-region propagations.
The optical link layer is characterized in that the optical link layer is mainly the optical waveguide structure (being similar to the function of lead in the circuit) that connects individual devices, and this layer mainly finished the function of light transmission.The making of optical link layer, the waveguide that utilizes traditional wet method or dry etching to process realizes the light transmission of the horizontal direction between the individual devices, and the wide-angle that the input of described waveguide has all adopted mould spot transformational structure to enlarge structures realization light such as mode spot-size, grating coupler or photonic crystal is turned round; From the light of device layer by input end grating coupler or structure such as photonic crystal and mould spot transformational structure after enter the waveguide part, through propagating to device layer after structure such as grating coupler by output terminal or photonic crystal after the waveguide part and the mould spot transformational structure.
Device layer is connected with the light of optical link layer, the vertical light connection that the wide-angle that adopts mould spot transformational structure to change structures realization light such as mode spot-size, grating coupler or photonic crystal is turned round and realized light big alignment tolerance between device layer and light connecting line layer.
Individual devices main part, this part have realized that modulation, the partial wave to light closes functions such as ripple, detection.
The waveguide part, this part has realized light in the transmission that is parallel to optical link layer direction.
Description of drawings
In order more clearly to introduce above-mentioned purpose of the present invention and advantage, this explanation will be described further in conjunction with 2 parts of accompanying drawings of a certain embodiments and this embodiment, and these accompanying drawings are:
Fig. 1 is the device layer of off working state and the distribution schematic diagram of optical link layer.
Fig. 2 is the work synoptic diagram of device layer and optical link layer.
Embodiment
Introduce the present invention in detail below in conjunction with Fig. 1-2:
Device layer 19 bondings individual devices 1 and 2, individual devices 1 and 2 has all adopted mould spot transformational structure to change structures such as mode spot-size, grating coupler or photonic crystal at input and output waveguide part 3-18;
Utilize the processing of traditional wet method or dry etching to connect the optical waveguide structure of individual devices on the optical link layer 20, the input of described waveguide has adopted mould spot transformational structure to change structures such as mode spot-size, grating coupler or photonic crystal.
Light is from input optical fibre 21-24 input hybrid integrated optical circuit chip, enter the waveguide 29-32 of optical link layer, change structures realization wide-angles such as mode spot-size, grating coupler or photonic crystal through the mould spot transformational structure in the waveguide and turn round 20 outgoing of vertical light line layer.The light of outgoing turns round through structures such as mould spot transformational structure, grating coupler or the photonic crystal realization wide-angle of the input waveguide part 3-6 of individual devices 1 on the device layer 19 and enters the main part of individual devices 1, through realizing that through the structures such as mould spot transformational structure, grating coupler or photonic crystal of the output waveguide part 7-10 of individual devices 1 wide-angle turns round 19 outgoing of vertical devices layer after the main part of individual devices 1.
The light of outgoing turns round through structures such as mould spot transformational structure, grating coupler or the photonic crystal realization wide-angle of the importation of transmission waveguide 33-36 on the optical link layer 20 and enters the main part of transmission waveguide, through realizing that through the structures such as mould spot transformational structure, grating coupler or photonic crystal of the output of transmission waveguide 33-36 wide-angle turns round 20 outgoing of vertical light line layer after the main part.
The light of outgoing turns round through structures such as mould spot transformational structure, grating coupler or the photonic crystal realization wide-angle of the input waveguide part 11-14 of individual devices 2 on the device layer 19 and enters the main part of individual devices 2, through realizing that through the structures such as mould spot transformational structure, grating coupler or photonic crystal of the output waveguide part 15-18 of individual devices 2 wide-angle turns round 19 outgoing of vertical devices layer after the main part of individual devices 2.
The light of outgoing turns round through structures such as mould spot transformational structure, grating coupler or the photonic crystal realization wide-angle of the importation of transmission waveguide 37-40 on the optical link layer 20 and enters the main part of transmission waveguide, exports through output optical fibre 25-28 through after the main part.
Though described the present invention in detail with reference to the foregoing description, should be appreciated that the present invention is not limited to the disclosed embodiments, for the technician of this professional domain, can carry out various changes to its form and details.This invention is intended to contain the interior various distortion of spirit and scope of appended claims.

Claims (9)

1.一种采用双层结构的混合集成光路芯片,其特征在于,该混合集成光路芯片中,将混合集成光路芯片分为器件层与光线路层,光在两层之间典型的光行进路线为:由光纤输入、行进至光线路层、行进至器件层通过独立器件、行进至光线路层、行进至器件层通过独立器件、行进至光线路层、……、行进至器件层通过独立器件、行进至光线路层、行进至光纤。1. A hybrid integrated optical circuit chip adopting a double-layer structure, characterized in that, in the hybrid integrated optical circuit chip, the hybrid integrated optical circuit chip is divided into a device layer and an optical circuit layer, and the typical light travel route of light between the two layers It is: input from the optical fiber, travel to the optical line layer, travel to the device layer through independent devices, travel to the optical circuit layer, travel to the device layer through independent devices, travel to the optical circuit layer, ..., travel to the device layer through independent devices , advance to the optical line layer, and advance to the optical fiber. 2.根据权利要求1中的采用双层结构的混合集成光路芯片,其特征在于,器件层,该层为集成了独立器件的硅光学平台,该层主要通过集成在该平台上的独立器件来完成集成光路的各种功能。2. According to the hybrid integrated optical circuit chip adopting double-layer structure in claim 1, it is characterized in that, the device layer, this layer is a silicon optical platform integrated with independent devices, and this layer is mainly realized by the independent devices integrated on the platform Complete various functions of the integrated optical path. 3.根据权利要求1中的采用双层结构的混合集成光路芯片,其特征在于,光线路层主要为连接独立器件的光波导结构,该层主要完成光传输。3. The hybrid integrated optical circuit chip adopting a double-layer structure according to claim 1, wherein the optical circuit layer is mainly an optical waveguide structure connecting independent devices, and this layer mainly completes optical transmission. 4.根据权利要求1中的采用双层结构的混合集成光路芯片,其特征在于,器件层与光线路层的光连接,采用模斑转换结构扩大模斑尺寸、光栅耦合器或者光子晶体结构实现光的大角度拐弯来实现光在器件层和光连线层之间大对准容差的垂直光连接。4. according to the hybrid integrated optical circuit chip that adopts double-layer structure in claim 1, it is characterized in that, the optical connection of device layer and optical line layer, adopts mode spot conversion structure to expand mode spot size, grating coupler or photonic crystal structure to realize The light is bent at a large angle to realize the vertical optical connection with large alignment tolerance of light between the device layer and the optical wiring layer. 5.根据权利要求2中的采用双层结构的混合集成光路芯片,其特征在于,器件层,该层采用硅光学平台,经过湿法或者干法刻蚀微细加工工艺加工出微结构,来提供独立器件的定位基准,独立器件通过倒装焊等方法集成到该平台上。5. According to the hybrid integrated optical circuit chip adopting a double-layer structure in claim 2, it is characterized in that, the device layer, this layer adopts a silicon optical platform, and processes a microstructure through a wet or dry etching microfabrication process to provide The positioning reference of independent devices, which are integrated into the platform by methods such as flip-chip welding. 6.根据权利要求5中的采用双层结构的混合集成光路芯片,其特征在于,器件层集成的独立器件在输入输出波导部分均采用了采用模斑转换结构扩大模斑尺寸、光栅耦合器或者光子晶体等结构实现光的大角度拐弯;来自光线路层的光通过输入端的光栅耦合器或者光子晶体结构和模斑转换结构之后进入独立器件主体部分,经过独立器件主体部分之后通过输出端的光栅耦合器或者光子晶体结构和模斑转换结构之后向光线路层传播。6. According to the hybrid integrated optical circuit chip adopting a double-layer structure in claim 5, it is characterized in that, the independent device integrated in the device layer has adopted a mode spot conversion structure to expand the mode spot size, a grating coupler or Structures such as photonic crystals realize the large-angle bending of light; the light from the optical line layer enters the main part of the independent device after passing through the grating coupler at the input end or the photonic crystal structure and the mode spot conversion structure, and then passes through the main part of the independent device. After passing through the main part of the independent device, it is coupled through the grating at the output end The device or the photonic crystal structure and the mode spot conversion structure then propagate to the optical line layer. 7.根据权利要求6中的采用双层结构的混合集成光路芯片,其特征在于,独立器件主体部分,该部分实现了对光的调制、分波合波、探测等功能。7. The hybrid integrated optical circuit chip adopting a double-layer structure according to claim 6, characterized in that the main part of the independent device realizes the functions of light modulation, wave division and multiplexing, and detection. 8.根据权利要求3中的采用双层结构的混合集成光路芯片,其特征在于,光线路层利用传统的湿法或者干法刻蚀加工的波导来实现独立器件之间的水平方向的光传输,所述波导的输入输出部分均采用了采用模斑转换结构扩大模斑尺寸、光栅耦合器或者光子晶体结构实现光的大角度拐弯;来自器件层的光通过输入端的光栅耦合器或者光子晶体等结构和模斑转换结构之后进入波导传输部分,经过波导传输部分之后通过输出端的光栅耦合器或者光子晶体结构和模斑转换结构之后向器件层传播。8. According to the hybrid integrated optical circuit chip adopting a double-layer structure in claim 3, it is characterized in that the optical circuit layer utilizes traditional wet or dry etched waveguides to realize horizontal light transmission between independent devices , the input and output parts of the waveguide all adopt the mode spot conversion structure to expand the mode spot size, the grating coupler or the photonic crystal structure to realize the large-angle bending of light; the light from the device layer passes through the grating coupler or photonic crystal at the input end, etc. The structure and the mode spot conversion structure then enter the waveguide transmission part, pass through the waveguide transmission part, pass through the grating coupler at the output end or the photonic crystal structure and the mode spot conversion structure, and then propagate to the device layer. 9.根据权利要求8中的采用双层结构的混合集成光路芯片,其特征在于,波导传输部分,该部分实现了对光在平行于光线路层方向的传输。9. The hybrid integrated optical circuit chip adopting a double-layer structure according to claim 8, characterized in that the waveguide transmission part realizes the transmission of light in a direction parallel to the optical circuit layer.
CN 200510011211 2005-01-20 2005-01-20 Hybrid integrated optical circuit chip employing double-layer structure Pending CN1808192A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107924027A (en) * 2015-06-12 2018-04-17 加利福尼亚太平洋生物科学股份有限公司 Integrated target spot waveguide device and system for optical coupling
CN110673420A (en) * 2018-07-02 2020-01-10 中国科学院半导体研究所 Integrated optical frequency comb based on microresonator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107924027A (en) * 2015-06-12 2018-04-17 加利福尼亚太平洋生物科学股份有限公司 Integrated target spot waveguide device and system for optical coupling
CN110673420A (en) * 2018-07-02 2020-01-10 中国科学院半导体研究所 Integrated optical frequency comb based on microresonator

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