CN1855420A - Dimashg process with selective copper deposition - Google Patents
Dimashg process with selective copper deposition Download PDFInfo
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- CN1855420A CN1855420A CN 200510025457 CN200510025457A CN1855420A CN 1855420 A CN1855420 A CN 1855420A CN 200510025457 CN200510025457 CN 200510025457 CN 200510025457 A CN200510025457 A CN 200510025457A CN 1855420 A CN1855420 A CN 1855420A
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- Prior art keywords
- copper
- deposit
- layer
- deposition
- damascus technics
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- 239000010949 copper Substances 0.000 title claims abstract description 93
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 92
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 92
- 238000000034 method Methods 0.000 title claims abstract description 23
- 230000008021 deposition Effects 0.000 title claims abstract description 20
- 238000000151 deposition Methods 0.000 claims abstract description 24
- 239000011368 organic material Substances 0.000 claims abstract description 20
- 238000005498 polishing Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 7
- 238000009792 diffusion process Methods 0.000 claims description 22
- 238000000227 grinding Methods 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000011049 filling Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
After depositing a diffusion-stop layer and a copper seed layer the process comprises: depositing organic material that is highly volatile and capable of removing by wet way; removing the over-filling material, a portion of copper seed layer where the trench is not opened and the diffusion-stop layer; removing said organic material; making copper deposition in the trench and plug; removing bulge of copper. The invention reduces the polishing work and mechanical strength for copper by using CMP.
Description
Technical field
The present invention relates to a kind of field of semiconductor fabrication processes, especially relevant a kind of Damascus technics that utilizes selective copper deposition at semiconductor surface.
Background technology
Along with the continuous development of ic manufacturing technology, the characteristic line breadth of semiconductor chip constantly dwindles, and advanced at present CMOS production technology has reached the level of 0.13um.Simultaneously, along with the number of transistors in the chip constantly increases, function is more and more stronger, and the metal connecting line of chip is in more and more thinner, and level is more and more.This just convenient RC that is produced by dielectric layer electric capacity between connection resistances and line postpones increasing to the influence of chip speed, even has surpassed the grid delay of the speed of decision transistor own.Therefore, manage to reduce connection resistances and reduce electric capacity between line, become the key of further raising chip speed.
For a long time, aluminium is main link material always.In general sub-micron and deep sub-micron technique, the aluminum strip that forms after the photoetching of the aluminium film of deposit process, the etching has been formed the metal line with one deck.The aluminum strip of adjacent two layers is then connected by the through hole of filling tungsten.In 130nm and following semiconductor technology, be to reduce resistance-capacitance to postpone (RC delay), copper will replace aluminium fully and become the electric conducting material of interconnection line in the semiconductor element.Compare with aluminium, the resistance coefficient of copper is little, the fusing point height, and anti-electromigration (anti electromigration) ability is strong, and can carry higher current density.Because can do carefullyyer, adopt copper wiring also can reduce electric capacity and power consumption (power dissipation), and can improve the packaging density (packing density) of element.
Because of copper is difficult to be etched, Damascus (damascene) technology is commonly used in copper wiring: leave earlier interconnection line groove and plug hole on dielectric layer, make copper at fluting place cement copper by electroplating (electroplating) or chemical plating, utilize chemico-mechanical polishing (CMP) to grind off again crossing the copper of filling out.For preventing the diffusion of copper to dielectric material, so when adopting the copper connecting lines technology, between copper and dielectric material such as silicon dioxide (SiO2), the diffusion impervious layer (diffusion barrier) that needs deposit one deck to conduct electricity very well causes element short circuit and electric leakage to prevent the diffusion of copper in medium.The barrier layer can be improved the adhesive force of copper and dielectric material simultaneously.
In the copper depositing technics of prior art, generally adopt following steps, see also shown in Figure 1, the first step, first deposition of dielectric layer, then deposit one deck etch stop layer is or/and one deck CMP stop layer, as silicon nitride (SiN) or silicon oxide carbide (SiCO); Second step, the dielectric layer of deposit is carried out etching, leave line groove and plug hole; The 3rd step is by physical vapor precipitation (physical vapordeposition, PVD) deposit diffusion impervious layer (diffusion barrier) and copper seed layer (CuSeed); In the 4th step, carry out the copper deposit by electroplating (electroplating) or chemical plating (chemical plating); In the 5th step, the copper seed crystal in copper of filling out and unslotted zone and diffusion impervious layer are removed with the method for CMP and are smooth excessively.
Yet, in road, existing back Damascus technics, because copper deposit non-selectivity, except that line groove and plug hole must be filled, very thick main body copper on the unslotted district also can deposit.The main body copper in this part unslotted district and copper seed layer and diffusion impervious layer must totally be removed to guarantee them completely by overground (over-polishing) in ensuing CMP process.Copper connecting lines depression in the surface (dishing) also can't be avoided because of overground.General by the adjusting of CMP technological parameter, or even the CMP lapping liquid, the adjustment of grinding pad can improve copper depression to a certain extent.But often also can bring metal residues, the secondary face effect of degradation under the grinding rate.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of Damascus technics that utilizes selective copper deposition is provided, it only carries out the copper deposit on the line groove of dielectric layer and plug hole, thereby avoids the overground depression that causes of copper in postchannel process.
The object of the present invention is achieved like this: a kind of Damascus technics that utilizes selective copper deposition is characterized in that: after deposit diffusion impervious layer and copper seed layer, may further comprise the steps,
At first, but the organic material that deposit is volatile or wet method is removed;
Then, the copper seed layer in material that mistake is filled out and unslotted zone and diffusion impervious layer are removed;
Then, remove above-mentioned organic material;
Then, in groove and plug hole, carry out the copper deposit;
At last, the copper of projection is removed.
The present invention also has following feature: described organic material is the spin coating anti-reflecting layer; Describedly remove and use the cmp mode to remove crossing the copper seed layer in the material fill out and unslotted zone and diffusion impervious layer; Described removal organic material uses baking volatilization or wet method to remove; The chemical method deposit is used in described copper deposit; Described copper to projection uses the chemomechanical copper grinding liquid of high selectivity to carry out cmp and removes.
Compared with prior art; the invention has the beneficial effects as follows: because before the copper deposit; a kind of organic material of backfill is with the copper seed layer and the diffusion impervious layer at protection fluting place; utilize CMP to grind off again and removed organic material and unslotted zone copper crystal seed layer and the barrier layer of filling out, remove the organic material at fluting place.In copper depositing technics subsequently, because the unslotted zone does not have copper seed layer, copper only can be optionally in the deposit of fluting place.Reduce the amount of grinding of chemico-mechanical polishing (CMP) of ensuing copper and required mechanical strength so greatly, and need not grinding.The depression of copper minimizes behind the CMP thereby make, and surface flatness is improved.The reduction of the minimizing of amount of grinding and CMP mechanical strength also can make the defective relevant with CMP descend.
Description of drawings
Fig. 1 is the flow chart of Damascus technics of the copper deposit of prior art, and it uses the mode of figure to show the technological process of Damascus technics in the prior art and the product schematic diagram after each technological process.
Fig. 2 is a kind of flow chart that utilizes the Damascus technics of selective copper deposition of the present invention, it uses the mode of figure to show the process chart of a kind of Damascus technics that utilizes selective copper deposition of the present invention and the product schematic diagram after each technology, because first three step is same as the prior art, in this figure, only show the diagram in the 4th step to the 8th step.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described.
See also shown in Figure 2ly, it uses the mode of figure to show the process chart of a kind of Damascus technics that utilizes selective copper deposition of the present invention and the product schematic diagram after each technology.At first, the same with step of the prior art, first deposition of dielectric layer, then deposit one deck etch stop layer is or/and one deck CMP stop layer, as silicon nitride (SiN) or silicon oxide carbide (SiCO); Second step, the dielectric layer of deposit is carried out etching, leave line groove and plug hole; The 3rd step is by physical vapor precipitation (physical vapor deposition, PVD) deposit diffusion impervious layer (diffusion barrier) and copper seed layer (Cu Seed); The technology in the 4th step unlike the prior art, its organic material that deposit is volatile or but wet method is removed again on above-mentioned diffusion impervious layer and copper seed layer, this material will have certain mechanical strength after baking, can stand low intensive at least grinding, in the present embodiment, above-mentioned organic material is spin coating (Spin-on) anti-reflecting layer (Barc); The 5th step crossed organic material (being Barc in the present embodiment) and the copper seed crystal and the diffusion impervious layer in unslotted zone filled out and removes with cmp (CMP) method, will be with the copper seed crystal in unslotted zone and the removing fully on barrier layer in this step; In the 6th step, will remove at the organic material in line groove and the plug hole by baking volatilization or wet method removing method; The 7th step, promptly carry out the copper deposit by chemical method, therefore a line groove and plug hole place have diffusion impervious layer and copper seed layer, so copper only is deposited in above-mentioned line groove and the copper seed layer; The 8th step, utilize the chemomechanical copper grinding liquid (Cu CMPslurry) of high selectivity at last, the copper of the 7th step deposit rearward projection is ground, make it smooth because need not overground, so the depression of copper is minimized.
In sum; the present invention has finished inventor's goal of the invention; by before the copper deposit; a kind of organic material of backfill is with the copper seed layer and the diffusion impervious layer at protection fluting place; utilize CMP to grind off again and cross organic material and copper crystal seed layer and the barrier layer of filling out, remove the organic material at fluting place except that the unslotted zone.In copper depositing technics subsequently, because the unslotted zone does not have copper seed layer, copper only can be optionally in the deposit of fluting place.Reduce the amount of grinding of chemico-mechanical polishing (CMP) of ensuing copper and required mechanical strength so greatly, and need not grinding.The depression of copper minimizes behind the CMP thereby make, and surface flatness is improved.The reduction of the minimizing of amount of grinding and CMP mechanical strength also can make the defective relevant with CMP descend.
Claims (8)
1. Damascus technics that utilizes selective copper deposition is characterized in that: after deposit diffusion impervious layer and copper seed layer, may further comprise the steps,
At first, but the organic material that deposit is volatile or wet method is removed;
Then, the copper seed layer in material that mistake is filled out and unslotted zone and diffusion impervious layer are removed;
Then, remove above-mentioned organic material;
Then, in groove and plug hole, carry out the copper deposit;
At last, the copper of projection is removed.
2. the Damascus technics that utilizes selective copper deposition as claimed in claim 1 is characterized in that:
The step that also has deposition of dielectric layer and etch stop layer/CMP stop layer before deposit diffusion impervious layer and copper seed layer reaches the step of the dielectric layer of deposit being carried out etching.
3. the Damascus technics that utilizes selective copper deposition as claimed in claim 1 is characterized in that:
Described organic material is the spin coating anti-reflecting layer.
4. the Damascus technics that utilizes selective copper deposition as claimed in claim 1 is characterized in that:
Describedly remove and use the chemico-mechanical polishing mode to remove crossing the copper seed layer in the material fill out and unslotted zone and diffusion impervious layer.
5. the Damascus technics that utilizes selective copper deposition as claimed in claim 1 is characterized in that:
Described removal organic material uses baking volatilization or wet method to remove.
6. the Damascus technics that utilizes selective copper deposition as claimed in claim 1 is characterized in that:
The chemical method deposit is used in described copper deposit.
7. the Damascus technics that utilizes selective copper deposition as claimed in claim 1 is characterized in that:
Described copper to projection is removed and is used the chemico-mechanical polishing mode to remove.
8. the Damascus technics that utilizes selective copper deposition as claimed in claim 7 is characterized in that:
Use the chemomechanical copper grinding liquid of high selectivity during described chemico-mechanical polishing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510025457 CN1855420A (en) | 2005-04-27 | 2005-04-27 | Dimashg process with selective copper deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510025457 CN1855420A (en) | 2005-04-27 | 2005-04-27 | Dimashg process with selective copper deposition |
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| Publication Number | Publication Date |
|---|---|
| CN1855420A true CN1855420A (en) | 2006-11-01 |
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| CN 200510025457 Pending CN1855420A (en) | 2005-04-27 | 2005-04-27 | Dimashg process with selective copper deposition |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101697339B (en) * | 2009-10-28 | 2012-10-31 | 上海宏力半导体制造有限公司 | Mechanism for monitoring CMP sinking degree of damascene and resistivity test method thereof |
| CN104916583A (en) * | 2014-03-13 | 2015-09-16 | 台湾积体电路制造股份有限公司 | Barc-assisted process for planar recessing or removing of variable-height layers |
| CN105632906A (en) * | 2014-10-27 | 2016-06-01 | 中国科学院微电子研究所 | Self-Aligned Contact Fabrication Method |
| US9748109B2 (en) | 2014-03-13 | 2017-08-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMP-friendly coatings for planar recessing or removing of variable-height layers |
-
2005
- 2005-04-27 CN CN 200510025457 patent/CN1855420A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101697339B (en) * | 2009-10-28 | 2012-10-31 | 上海宏力半导体制造有限公司 | Mechanism for monitoring CMP sinking degree of damascene and resistivity test method thereof |
| CN104916583A (en) * | 2014-03-13 | 2015-09-16 | 台湾积体电路制造股份有限公司 | Barc-assisted process for planar recessing or removing of variable-height layers |
| US9748109B2 (en) | 2014-03-13 | 2017-08-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMP-friendly coatings for planar recessing or removing of variable-height layers |
| CN104916583B (en) * | 2014-03-13 | 2018-04-20 | 台湾积体电路制造股份有限公司 | For flat recessed or removal variable height layer BARC auxiliary processes |
| US11011385B2 (en) | 2014-03-13 | 2021-05-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMP-friendly coatings for planar recessing or removing of variable-height layers |
| CN105632906A (en) * | 2014-10-27 | 2016-06-01 | 中国科学院微电子研究所 | Self-Aligned Contact Fabrication Method |
| CN105632906B (en) * | 2014-10-27 | 2019-10-29 | 中国科学院微电子研究所 | Self-Aligned Contact Fabrication Method |
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Effective date of registration: 20061027 Address after: No. 1188 Bridge Road, Shanghai, Pudong Applicant after: Shanghai Huahong NEC Electronics Co., Ltd. Co-applicant after: Shanghai integrated circuit research and Development Center Co., Ltd. Address before: No. 1188 Bridge Road, Shanghai, Pudong Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |