CN1661820A - Light emitting diode - Google Patents
Light emitting diode Download PDFInfo
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- CN1661820A CN1661820A CN2004100069183A CN200410006918A CN1661820A CN 1661820 A CN1661820 A CN 1661820A CN 2004100069183 A CN2004100069183 A CN 2004100069183A CN 200410006918 A CN200410006918 A CN 200410006918A CN 1661820 A CN1661820 A CN 1661820A
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- 239000000463 material Substances 0.000 claims abstract description 47
- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 229910052737 gold Inorganic materials 0.000 claims description 168
- 229910052804 chromium Inorganic materials 0.000 claims description 48
- 229910052719 titanium Inorganic materials 0.000 claims description 44
- 229910052718 tin Inorganic materials 0.000 claims description 40
- 229910000943 NiAl Inorganic materials 0.000 claims description 32
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 claims description 32
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 32
- 229910052763 palladium Inorganic materials 0.000 claims description 32
- 229910052726 zirconium Inorganic materials 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 22
- 238000000576 coating method Methods 0.000 claims description 22
- 229910052779 Neodymium Inorganic materials 0.000 claims description 20
- 230000001681 protective effect Effects 0.000 claims description 19
- 230000006911 nucleation Effects 0.000 claims description 15
- 238000010899 nucleation Methods 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 14
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910016569 AlF 3 Inorganic materials 0.000 claims description 4
- 229910016036 BaF 2 Inorganic materials 0.000 claims description 4
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910005690 GdF 3 Inorganic materials 0.000 claims description 4
- 229910004379 HoF 3 Inorganic materials 0.000 claims description 4
- 229910017768 LaF 3 Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- GBECUEIQVRDUKB-UHFFFAOYSA-M thallium monochloride Chemical compound [Tl]Cl GBECUEIQVRDUKB-UHFFFAOYSA-M 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims 2
- 239000010410 layer Substances 0.000 abstract description 128
- 239000011241 protective layer Substances 0.000 abstract description 3
- 239000010936 titanium Substances 0.000 description 47
- 229910002601 GaN Inorganic materials 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
A LED includes a semiconductor layer, a transparent conductive layer, first electrode, second electrode and transparent protective layer. The semiconductor layer is positioned on basis material composed of a doped semiconductor in first type, a doped semiconductor in second type and a luminous layer for example. The transparent conductive layer is configured on the semiconductor layer. First electrode is connected to the doped semiconductor in first type electrically; and second electrode is connected to the doped semiconductor in second type electrically. Besides increasing brightness of module, the transparent conductive layer can isolate moisture and protect module so as to raise service life of the module.
Description
Technical field
The invention relates to a kind of light-emitting diode that constitutes by III-V family element (III-V group element) (light emitting diode is called for short LED), and particularly relevant for a kind of light-emitting diode that covers a protective clear layer.
Background technology
In recent years, because the luminous efficiency of light-emitting diode constantly promotes, make light-emitting diode replace fluorescent lamp and white heat bulb gradually in some field, for example need Dashboard illumination, the traffic signal light of scanner lamp source, Backlight For Liquid Crystal Display Panels or the front light-source automobile of reaction at a high speed, and general lighting device etc.Light-emitting diode and conventional bulb relatively have absolute advantage, for example volume is little, life-span length, low-voltage/current drives, be difficult for breaking, do not have significant heat problem when luminous, do not contain mercury (not having pollution problem), the good characteristics such as (power savings) of luminous efficiency.
The light-emitting diode that is made of III-V family element is the material of a kind of wide energy gap (bandgap), its emission wavelength is contained ruddiness from ultraviolet light always, therefore can say so and almost contain the wave band of all visible lights, wherein gallium nitride (GaN) light-emitting diode component is gazed at deeply.As Fig. 1 and shown in Figure 2, it illustrates the generalized section of existing a kind of light-emitting diode.
Please refer to Fig. 1, the light-emitting diode of this type is formed on the base material 100, and its material is aluminium oxide (Al
2O
3).In regular turn for being first bond course (confinement layer) 116 on the conductive doped resilient coating (n-type conductive buffer layer) 114 of crystal nucleation layer (nucleation layer) 112 and N type, the resilient coating 114, a luminescent layer 118 as illuminating is arranged, and form second bond course 120 thereon on the base material 100 on first bond course (confinement layer) 116.
Wherein, the doping type of first bond course 116 and second bond course 120 is opposite, the gallium nitride (n-GaN) that first bond course 116 mixes for the N type, and the gallium nitride (p-GaN) that second bond course 120 mixes for the P type.Afterwards, form contact layer 122, the gallium nitride that it mixes for the P type in going up of second bond course 120.Then, on the subregion of contact layer, form second electrode 124, the material that forms second electrode 124 is generally tin indium oxide (Indium tin oxide), tin oxide cadmium (Cadmium tin oxide) or the metal as thin as a wafer that the N type mixes, and as the anode of light-emitting diode.In addition, on the zone that isolates with first bond course 116 on the subregion of resilient coating 114, form first electrode 126, as the negative electrode of light-emitting diode.
Please refer to Fig. 2, this light-emitting diode component comprises semi-conductor layer 210, a transparency conducting layer 228, one first electrode 226, one second electrode 224.Wherein semiconductor layer 210 comprises one first type doping semiconductor layer 220, one second type doping semiconductor layer 232 at least, and a luminescent layer 222.
Wherein, luminescent layer 222 is positioned on the first type doping semiconductor layer 220, the second type doping semiconductor layer 232 is positioned on the luminescent layer 222, transparency conducting layer 228 is positioned on the second type doping semiconductor layer 232, first electrode 226 is electrically connected on the first type doping semiconductor layer 220 and second electrode 224 is positioned on the subregion of transparency conducting layer 228.
As for the material of light-emitting diode, the material of first electrode 226 is titanium/aluminium alloys etc., and second electrode 224 comprises N type oxidic, transparent, conductive layers and P type oxidic, transparent, conductive layers.Wherein, the material of N type oxidic, transparent, conductive layers is that the material of ITO and P type oxidic, transparent, conductive layers is CuAlO
2Deng.
Existing light-emitting diode, the brightness that it produced is limited, and under long-term the use, is subjected to the destruction of moisture easily, and its surface in light-emitting diode produces oxide, lowers the useful life of light-emitting diode.
Summary of the invention
In view of this, purpose of the present invention just provides a kind of light-emitting diode, existing light-emitting diode electrode on cover the layer of transparent protective layer, to increase the brightness of light-emitting diode.
A further object of the present invention just provides a kind of light-emitting diode, covers the layer of transparent protective layer on the electrode of existing light-emitting diode, with isolated moisture protection light-emitting diode, to promote the life-span of light-emitting diode.
For reaching above-mentioned purpose; the present invention proposes a kind of light-emitting diode, comprises a base material, a crystal nucleation layer, a resilient coating, one first bond course, a luminescent layer, one second bond course, a contact layer, a transparency conducting layer, one first electrode, one second electrode, a protective clear layer.Wherein crystal nucleation layer, resilient coating, first bond course, luminescent layer, second bond course and contact layer for example are the formed semiconductor layers of a series of brilliant processes of heap of stone.
And being crystal nucleation layer, each configuration of components of above-mentioned light-emitting diode is positioned on the base material; resilient coating is positioned on the crystal nucleation layer; first bond course is positioned on the subregion of resilient coating; wherein the doping type of first bond course is identical with the doping type of resilient coating; luminescent layer is positioned on first bond course; second bond course is positioned on the luminescent layer, and wherein the doping type of second bond course is different with the doping type of first bond course; contact layer is positioned on second bond course; transparency conducting layer is positioned on the contact layer; first electrode is positioned on the resilient coating in addition of the first bond course distributed areas; second electrode is positioned on the subregion of transparency conducting layer; protective clear layer is disposed on the subregion of the transparency conducting layer and second electrode.
For reaching above-mentioned purpose, the present invention proposes a kind of light-emitting diode in addition, comprises semi-conductor layer, a transparency conducting layer, one first electrode, one second electrode and a protective clear layer.Wherein semiconductor layer comprises one first type doping semiconductor layer, one second type doping semiconductor layer at least, and a luminescent layer.
And on the subregion that each configuration of components luminescent layer is positioned on the first type doping semiconductor layer in the above-mentioned light-emitting diode, the second type doping semiconductor layer is positioned on this luminescent layer, transparency conducting layer is positioned on the second type doping semiconductor layer, first electrode is electrically connected on the first type doping semiconductor layer, second electrode is positioned at transparency conducting layer, protective clear layer is disposed on the subregion of the transparency conducting layer and second electrode.
The present invention is because add protective clear layer in making light-emitting diode, this protective clear layer is for example made with the optical thin film material of refractive index＞1.2, except can increasing assembly brightness, and can completely cut off moisture protection assembly, with the lifting subassembly life-span.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 represents the generalized section of existing light-emitting diode.
Fig. 2 represents the generalized section of existing light-emitting diode.
Fig. 3 represents the generalized section of light-emitting diode according to one preferred embodiment of the present invention.
Fig. 4 represents the generalized section of another preferred embodiment light-emitting diode according to the present invention.
Fig. 5 represents the luminosity ratio comparison diagram of light-emitting diode and existing light-emitting diode according to one preferred embodiment of the present invention.
Embodiment
Main concept of the present invention is to add protective clear layer in making light-emitting diode, and the effect of this protective clear layer and can completely cut off moisture protection assembly except can increasing assembly brightness, with the lifting subassembly life-span.The formed diode of notion has two kinds of kenels at least according to this.Below will cooperate Fig. 3 and Fig. 4 to do further explanation.
Fig. 3 represents the generalized section of light-emitting diode according to one preferred embodiment of the present invention.Please refer to Fig. 3; the light-emitting diode component of present embodiment mainly is made of a base material 300, a crystal nucleation layer 312, a resilient coating 314, one first bond course 316, a luminescent layer 318, one second bond course 320, a contact layer 322, a transparency conducting layer 328, one first electrode 326, one second electrode 324 and a protective clear layer 330; wherein crystal nucleation layer 312, resilient coating 314, first bond course 316, luminescent layer 318, second bond course 320 can be referred to as semi-conductor layer with contact layer 322, and it is for example made by brilliant manufacturing process of heap of stone.
And each configuration of components is that crystal nucleation layer 312 is positioned on the base material 300 in the above-mentioned light-emitting diode; resilient coating 314 is positioned on the crystal nucleation layer 312; first bond course 316 is positioned on the subregion of resilient coating 314; wherein the doping type of first bond course 316 is identical with the doping type of resilient coating 314; luminescent layer 318 is positioned on first bond course 316; second bond course 320 is positioned on the luminescent layer 318, and wherein the doping type of second bond course 320 is different with the doping type of first bond course 316; contact layer 322 is positioned on second bond course 320; transparency conducting layer 328 is positioned on the contact layer 322; first electrode 324 is positioned on the resilient coating 314 in addition of first bond course, 316 distributed areas; second electrode 324 is positioned on the subregion of transparency conducting layer 328 and protective clear layer 330 is positioned on the subregion of the transparency conducting layer 328 and second electrode 324.
Hold above-mentionedly, the material of each parts of light-emitting diode is respectively described below: the material of base material 300 for example is aluminium oxide, carborundum (SiC), zinc oxide (ZnO), silicon (Si), gallium phosphide (GaP), and GaAs (GaAs) one of them.The material of crystal nucleation layer 312 for example is Al
eIn
fGa
1-e-fN, e, f 〉=0; 0≤e+f≤1, it mixes for the N type.The material of resilient coating 314 for example is Al
cIn
dGa
1-c-dN, c, d 〉=0; 0≤c+d＜1, it mixes for the N type.The material of first bond course 316 for example is Al
xIn
yGa
1-x-yN, x, y 〉=0; 0≤x+y＜1; X＞c.
In addition, luminescent layer 318 for example is the Al of dopant profile
aIn
bGa
1-a-bN/Al
xIn
yGa
1-x-yN quantum well structures, and a, b 〉=0; 0≤a+b＜1; X, y 〉=0; 0≤x+y＜1; X＞c＞a, it mixes for the N type or the P type mixes.And luminescent layer 318 for example is unadulterated Al
aIn
bGa
1-a-bN/Al
xIn
yGa
1-x-yN quantum well structures, and a, b 〉=0; 0≤a+b＜1; X, y 〉=0; 0≤x+y＜1; X＞c＞a.The material of second bond course 320 for example is Al
xIn
yGa
1-x-yN, x, y 〉=0; 0≤x+y＜1; X＞c.Contact layer 322 for example is a superlattice strained layer, and this superlattice strained layer comprises the Al that modulation mixes
uIn
vGa
1-u-vN/Al
xIn
yGa
1-x-yN quantum well structures, and u, v 〉=0; 0≤u+v≤l; X, y 〉=0; 0≤x+y＜1; X＞u, this superlattice strained layer mixes for the N type or the P type mixes.
In addition, the material of first electrode 326 for example is Ti/Al, Ti/Al/Ti/Au, Ti/Al/Pt/Au, Ti/Al/Ni/Au, Ti/Al/Pd/Au, Ti/Al/Cr/Au, Ti/Al/Co/Au, Cr/Au, Cr/Pt/Au, Cr/Pd/Au, Cr/Ti/Au, Cr/TiWx/Au, Cr/Al/Cr/Au, Cr/Al/Pt/Au, Cr/Al/Pd/Au, Cr/Al/Ti/Au, Cr/Al/Co/Au, Cr/Al/Ni/Au, Pd/Al/Ti/Au, Pd/Al/Pt/Au, Pd/Al/Ni/Au, Pd/Al/Pd/Au, Pd/Al/Cr/Au, Pd/Al/Co/Au, Nd/Al/Pt/Au, Nd/Al/Ti/Au, Nd/Al/Ni/Au, Nd/Al/Cr/Au, Nd/Al/Co/A, Hf/Al/Ti/Au, Hf/Al/Pt/Au, Hf/Al/Ni/Au, Hf/Al/Pd/Au, Hf/Al/Cr/Au, Hf/Al/Co/Au, Zr/Al/Ti/Au, Zr/Al/Pt/Au, Zr/Al/Ni/Au, Zr/Al/Pd/Au, Zr/Al/Cr/Au, Zr/Al/Co/Au, TiN
x/ Ti/Au, TiN
x/ Pt/Au, TiN
x/ Ni/Au, TiN
x/ Pd/Au, TiN
x/ Cr/Au, TiN
x/ Co/Au, TiWN
x/ Ti/Au, TiWN
x/ Pt/Au, TiWN
x/ Ni/Au, TiWN
x/ Pd/Au, TiWN
x/ Cr/Au, TiWN
x/ Co/Au, NiAl/Pt/Au, NiAl/Cr/Au, NiAl/Ni/Au, NiAl/Ti/Au, Ti/NiAl/Pt/Au, Ti/NiAl/Ti/Au, Ti/NiAl/Ni/Au or Ti/NiAl/Cr/Au.
And the material of second electrode 324 for example is Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWN
xOr WSi
xIn addition, the material of second electrode 224 for example is a N type oxidic, transparent, conductive layers or a P type oxidic, transparent, conductive layers, and wherein this N type oxidic, transparent, conductive layers for example is ITO, CTO, ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn or In
2O
3: Zn, in addition, this P type oxidic, transparent, conductive layers for example is CuAlO
2, LaCuOS, NiO, CuGaO
2Or SrCu
2O
2
And the material of protective clear layer 330 for example is AlF
3, AlN, Al
2O
3, BaF
2, BeO, Bi
2O
3, BiF
3, CaF
2, CdSe, CdS, CeF
3, CeO
2, CsI, DyF
2, GdF
3, Gd
2O
3, HfO
2, HoF
3, Ho
2O
3, LaF
3, La
2O
3, LiF, MgF
2, MgO, NaF, Na
3AlF
6, Na
5Al
3F
14, Nb
2O
5, NdF
3, Nd
2O
3, PbCl
2, PbF
2, PbO, Pr
6O
11, Sb
2O
3, Sc
2O
3, Si
3N
4, SiO, Si
2O
3, SiO
2, SrF
2, Al
2O
3, Substancel, Substance2, SubstanceM1, SubstanceH4, Ta
2O
5, TiO
2, TiN, TlCl, ThF
4, ThO
2, V
2O
5, WO
3, YF
3, Y
2O
3, YbF
3, Yb
2O
3, ZnS, ZnSe, ZrO
2
Fig. 4 represents the generalized section of another preferred embodiment light-emitting diode according to the present invention.Please refer to Fig. 4, the light-emitting diode component of present embodiment comprises semi-conductor layer 410, a transparency conducting layer 428, one first electrode 426, one second electrode 424 and a protective clear layer 430.Wherein semiconductor layer 410 comprises one first type doping semiconductor layer 420, one second type doping semiconductor layer 432 and a luminescent layer 422 at least.
On the subregion that luminescent layer 422 is positioned on the first type doping semiconductor layer 420, the second type doping semiconductor layer 432 is positioned on the luminescent layer 422, transparency conducting layer 428 is positioned on the second type doping semiconductor layer 432, first electrode 426 is electrically connected on the first type doping semiconductor layer 420, second electrode 424 is positioned at transparency conducting layer 428 and protective clear layer 430 be positioned on second electrode 424.
The material of above-mentioned each parts of light-emitting diode is respectively: the material of first electrode 426 for example is Ti/Al, Ti/Al/Ti/Au, Ti/Al/Pt/Au, Ti/Al/Ni/Au, Ti/Al/Pd/Au, Ti/Al/Cr/Au, Ti/Al/Co/Au, Cr/Au, Cr/Pt/Au, Cr/Pd/Au, Cr/Ti/Au, Cr/TiWx/Au, Cr/Al/Cr/Au, Cr/Al/Pt/Au, Cr/Al/Pd/Au, Cr/Al/Ti/Au, Cr/Al/Co/Au, Cr/Al/Ni/Au, Pd/Al/Ti/Au, Pd/Al/Pt/Au, Pd/Al/Ni/Au, Pd/Al/Pd/Au, Pd/Al/Cr/Au, Pd/Al/Co/Au, Nd/Al/Pt/Au, Nd/Al/Ti/Au, Nd/Al/Ni/Au, Nd/Al/Cr/Au, Nd/Al/Co/A, Hf/Al/Ti/Au, Hf/Al/Pt/Au, Hf/Al/Ni/Au, Hf/Al/Pd/Au, Hf/Al/Cr/Au, Hf/Al/Co/Au, Zr/Al/Ti/Au, Zr/Al/Pt/Au, Zr/Al/Ni/Au, Zr/Al/Pd/Au, Zr/Al/Cr/Au, Zr/Al/Co/Au, TiN
x/ Ti/Au, TiN
x/ Pt/Au, TiN
x/ Ni/Au, TiN
x/ Pd/Au, TiN
x/ Cr/Au, TiN
x/ Co/Au, TiWN
x/ Ti/Au, TiWN
x/ Pt/Au, TiWN
x/ Ni/Au, TiWN
x/ Pd/Au, TiWN
x/ Cr/Au, TiWN
x/ Co/Au, NiAl/Pt/Au, NiAl/Cr/Au, NiAl/Ni/Au, NiAl/Ti/Au, Ti/NiAl/Pt/Au, Ti/NiAl/Ti/Au, Ti/NiAl/Ni/Au or Ti/NiAl/Cr/Au.
And the material of second electrode 424 for example is Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWN
xOr WSi
xThe material of second electrode 424 also for example is a N type oxidic, transparent, conductive layers or a P type oxidic, transparent, conductive layers.Wherein N type oxidic, transparent, conductive layers for example is ITO, CTO, ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn or In
2O
3: Zn.And P type oxidic, transparent, conductive layers for example is CuAlO
2, LaCuOS, NiO, CuGaO
2Or SrCu
2O
2
And the material of protective clear layer 430 for example is AlF
3, AlN, Al
2O
3, BaF
2, BeO, Bi
2O
3, BiF
3, CaF
2, CdSe, CdS, CeF
3, CeO
2, CsI, DyF
2, GdF
3, Gd
2O
3, HfO
2, HoF
3, Ho
2O
3, LaF
3, La
2O
3, LiF, MgF
2, MgO, NaF, Na
3AlF
6, Na
5Al
3F
14, Nb
2O
5, NdF
3, Nd
2O
3, PbCl
2, PbF
2, PbO, Pr
6O
11, Sb
2O
3, Sc
2O
3, Si
3N
4, SiO, Si
2O
3, SiO
2, SrF
2, Al
2O
3, Substancel, Substance2, SubstanceM1, SubstanceH4, Ta
2O
5, TiO
2, TiN, TlCl, ThF
4, ThO
2, V
2O
5, WO
3, YF
3, Y
2O
3, YbF
3, Yb
2O
3, ZnS, ZnSe, ZrO
2
For confirming effect of the present invention, please refer to Fig. 5, Fig. 5 represents the luminosity ratio comparison diagram of light-emitting diode and existing light-emitting diode according to one preferred embodiment of the present invention.It is according to the light-emitting diode of aforementioned preferred embodiments made and existing light-emitting diode, with blue light diode, continues to do in 72 hours when lighting test the luminosity ratio comparison diagram that is obtained 80 degree Celsius, 50 milliamperes.As shown in Figure 5, whole about 9.24% the effect that increases of light-emitting diode of the present invention more existing light-emitting diode on the luminosity ratio.
Though the present invention discloses as above with a preferred embodiment; right its is not in order to limit the present invention; any those of ordinary skills; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is when being as the criterion with the scope that claim was defined.
Claims (28)
1. light-emitting diode comprises:
One base material;
One crystal nucleation layer is positioned on the described base material;
One resilient coating is positioned on the described crystal nucleation layer;
One first bond course is positioned on the subregion of described resilient coating, and the doping type of wherein said first bond course is identical with the doping type of described resilient coating;
One luminescent layer is positioned on described first bond course;
One second bond course is positioned on the described luminescent layer, and the doping type of wherein said second bond course is different with the doping type of described first bond course;
One contact layer is positioned on described second bond course;
One transparency conducting layer is positioned on the described contact layer;
One first electrode is positioned on the described resilient coating in addition of the described first bond course distributed areas;
One second electrode is positioned on the subregion of described transparency conducting layer; And
One protective clear layer is disposed on the subregion of described transparency conducting layer and described second electrode.
2. light-emitting diode as claimed in claim 1, the material of wherein said base material comprise aluminium oxide, carborundum (SiC), zinc oxide (ZnO), silicon (Si), gallium phosphide (GaP) and GaAs (GaAs) one of them.
3. light-emitting diode as claimed in claim 1, the material of wherein said crystal nucleation layer comprises Al
eIn
fGa
1-e-fN, e, f 〉=0; 0≤e+f≤1.
4. light-emitting diode as claimed in claim 3, wherein said crystal nucleation layer is mixed for the N type.
5. light-emitting diode as claimed in claim 1, the material of wherein said resilient coating comprises Al
cIn
dGa
1-c-dN, c, d 〉=0; 0≤c+d＜1.
6. light-emitting diode as claimed in claim 5, wherein said resilient coating mixes for the N type.
7. light-emitting diode as claimed in claim 5, the material of wherein said first bond course comprises Al
xIn
yGa
1-x-yN, x, y 〉=0; 0≤x+y＜1; X＞c.
8. light-emitting diode as claimed in claim 7, wherein said luminescent layer comprises the Al of doping
aIn
bGa
1-a-bN/Al
xIn
yGa
1-x-yN quantum well structures, and a, b 〉=0; 0≤a+b＜1; X, y 〉=0; 0≤x+y＜1; X＞c＞a.
9. light-emitting diode as claimed in claim 8, wherein said luminescent layer mixes for the N type.
10. light-emitting diode as claimed in claim 8, wherein said luminescent layer mixes for the P type.
11. light-emitting diode as claimed in claim 7, wherein said luminescent layer comprises unadulterated Al
aIn
bGa
1-a-bN/Al
xIn
yGa
1-x-yN quantum well structures, and a, b 〉=0; 0≤a+b＜1; X, y 〉=0; 0≤x+y＜1; X＞c＞a.
12. light emitting diode construction as claimed in claim 5, the material of wherein said second bond course comprises Al
xIn
yGa
1-x-yN, x, y 〉=0; 0≤x+y＜1; X＞c.
13. as claim 1 a described light-emitting diode, wherein said contact layer comprises a superlattice strained layer, described superlattice strained layer comprises the Al that modulation mixes
uIn
vGa
1-u-vN/Al
xIn
yGa
1-x-yN quantum well structures, and u, v 〉=0; 0≤u+v≤1; X, y 〉=0; 0≤x+y＜1; X＞u.
14. light-emitting diode as claimed in claim 13, wherein said superlattice strained layer mixes for the N type.
15. light-emitting diode as claimed in claim 13, wherein said superlattice strained layer mixes for the P type.
16. light emitting diode construction as claimed in claim 1, the material of wherein said first electrode comprises Ti/Al, Ti/Al/Ti/Au, Ti/Al/Pt/Au, Ti/Al/Ni/Au, Ti/Al/Pd/Au, Ti/Al/Cr/Au, Ti/Al/Co/Au, Cr/Au, Cr/Pt/Au, Cr/Pd/Au, Cr/Ti/Au, Cr/TiWx/Au, Cr/Al/Cr/Au, Cr/Al/Pt/Au, Cr/Al/Pd/Au, Cr/Al/Ti/Au, Cr/Al/Co/Au, Cr/Al/Ni/Au, Pd/Al/Ti/Au, Pd/Al/Pt/Au, Pd/Al/Ni/Au, Pd/Al/Pd/Au, Pd/Al/Cr/Au, Pd/Al/Co/Au, Nd/Al/Pt/Au, Nd/Al/Ti/Au, Nd/Al/Ni/Au, Nd/Al/Cr/Au, Nd/Al/Co/A, Hf/Al/Ti/Au, Hf/Al/Pt/Au, Hf/Al/Ni/Au, Hf/Al/Pd/Au, Hf/Al/Cr/Au, Hf/Al/Co/Au, Zr/Al/Ti/Au, Zr/Al/Pt/Au, Zr/Al/Ni/Au, Zr/Al/Pd/Au, Zr/Al/Cr/Au, Zr/Al/Co/Au, TiN
x/ Ti/Au, TiN
x/ Pt/Au, TiN
x/ Ni/Au, TiN
x/ Pd/Au, TiN
x/ Cr/Au, TiN
x/ Co/Au, TiWN
x/ Ti/Au, TiWN
x/ Pt/Au, TiWN
x/ Ni/Au, TiWN
x/ Pd/Au, TiWN
x/ Cr/Au, TiWN
x/ Co/Au, NiAl/Pt/Au, NiAl/Cr/Au, NiAl/Ni/Au, NiAl/Ti/Au, Ti/NiAl/Pt/Au, Ti/NiAl/Ti/Au, Ti/NiAl/Ni/Au, Ti/NiAl/Cr/Au one of them.
17. light-emitting diode as claimed in claim 1, the material of wherein said second electrode comprises Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWN
xAnd WSi
xOne of them.
18. light-emitting diode as claimed in claim 1, the material of wherein said second electrode comprise a N type oxidic, transparent, conductive layers and a P type oxidic, transparent, conductive layers one of them.
19. light-emitting diode as claimed in claim 18, wherein said N type oxidic, transparent, conductive layers comprises ITO, CTO, ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn and In
2O
3: Zn one of them.
20. light-emitting diode as claimed in claim 18, wherein said P type oxidic, transparent, conductive layers comprises CuAlO
2, LaCuOS, NiO, CuGaO
2With SrCu
2O
2One of them.
21. light-emitting diode as claimed in claim 18, the material of wherein said protective clear layer comprises AlF
3, AlN, Al
2O
3, BaF
2, BeO, Bi
2O
3, BiF
3, CaF
2, CdSe, CdS, CeF
3, CeO
2, CsI, DyF
2, GdF
3, Gd
2O
3, HfO
2, HoF
3, Ho
2O
3, LaF
3, La
2O
3, LiF, MgF
2, MgO, NaF, Na
3AlF
6, Na
5Al
3F
14, Nb
2O
5, NdF
3, Nd
2O
3, PbCl
2, PbF
2, PbO, Pr
6O
11, Sb
2O
3, Sc
2O
3, Si
3N
4, SiO, Si
2O
3, SiO
2, SrF
2, Al
2O
3, Substance1, Substance2, SubstanceM1, SubstanceH4, Ta
2O
5, TiO
2, TiN, TlCl, ThF
4, ThO
2, V
2O
5, WO
3, YF
3, Y
2O
3, YbF
3, Yb
2O
3, ZnS, ZnSe, ZrO
2One of them.
22. a light-emitting diode comprises:
Semi-conductor layer, described semiconductor layer comprises one first type doping semiconductor layer, one second type doping semiconductor layer at least, and a luminescent layer, wherein said luminescent layer is positioned on the described first type doping semiconductor layer, and the described second type doping semiconductor layer is positioned on the described luminescent layer;
One transparency conducting layer is positioned on the described second type doping semiconductor layer;
One first electrode, it is electrically connected on the described first type doping semiconductor layer;
One second electrode is positioned on the subregion of described transparency conducting layer; And
One protective clear layer is disposed on the subregion of described transparency conducting layer and described second electrode.
23. light-emitting diode as claimed in claim 22, the material of wherein said first electrode comprises Ti/Al, Ti/Al/Ti/Au, Ti/Al/Pt/Au, Ti/Al/Ni/Au, Ti/Al/Pd/Au, Ti/Al/Cr/Au, Ti/Al/Co/Au, Cr/Au, Cr/Pt/Au, Cr/Pd/Au, Cr/Ti/Au, Cr/TiWx/Au, Cr/Al/Cr/Au, Cr/Al/Pt/Au, Cr/Al/Pd/Au, Cr/Al/Ti/Au, Cr/Al/Co/Au, Cr/Al/Ni/Au, Pd/Al/Ti/Au, Pd/Al/Pt/Au, Pd/Al/Ni/Au, Pd/Al/Pd/Au, Pd/Al/Cr/Au, Pd/Al/Co/Au, Nd/Al/Pt/Au, Nd/Al/Ti/Au, Nd/Al/Ni/Au, Nd/Al/Cr/Au, Nd/Al/Co/A, Hf//Al/Ti/Au, Hf/Al/Pt/Au, Hf/Al/Ni/Au, Hf/Al/Pd/Au, Hf/Al/Cr/Au, Hf/Al/Co/Au, Zr/Al/Ti/Au, Zr/Al/Pt/Au, Zr/Al/Ni/Au, Zr/Al/Pd/Au, Zr/Al/Cr/Au, Zr/Al/Co/Au, TiN
x/ Ti/Au, TiN
x/ Pt/Au, TiN
x/ Ni/Au, TiN
x/ Pd/Au, TiN
x/ Cr/Au, TiN
x/ Co/Au, TiWN
x/ Ti/Au, TiWN
x/ Pt/Au, TiWN
x/ Ni/Au, TiWN
x/ Pd/Au, TiWN
x/ Cr/Au, TiWN
x/ Co/Au, NiAl/Pt/Au, NiAl/Cr/Au, NiAl/Ni/Au, NiAl/Ti/Au, Ti/NiAl/Pt/Au, Ti/NiAl/Ti/Au, Ti/NiAl/Ni/Au, Ti/NiAl/Cr/Au one of them.
24. light-emitting diode as claimed in claim 22, the material of wherein said second electrode comprises Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWN
xAnd WSi
xOne of them.
25. light-emitting diode as claimed in claim 22, the material of wherein said second electrode comprise a N type oxidic, transparent, conductive layers and a P type oxidic, transparent, conductive layers one of them.
26. light-emitting diode as claimed in claim 25, wherein said N type oxidic, transparent, conductive layers comprises ITO, CTO, ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn and In
2O
3: Zn one of them.
27. light-emitting diode as claimed in claim 25, wherein said P type oxidic, transparent, conductive layers comprises CuAlO
2, LaCuOS, NiO, CuGaO
2With SrCu
2O
2One of them.
28. light-emitting diode as claimed in claim 22, the material of wherein said protective clear layer comprises AlF
3, AlN, Al
2O
3, BaF
2, BeO, Bi
2O
3, BiF
3, CaF
2, CdSe, CdS, CeF
3, CeO
2, CsI, DyF
2, GdF
3, Gd
2O
3, HfO
2, HoF
3, Ho
2O
3, LaF
3, La
2O
3, LiF, MgF
2, MgO, NaF, Na
3AlF
6, Na
5Al
3F
14, Nb
2O
5, NdF
3, Nd
2O
3, PbCl
2, PbF
2, PbO, Pr
6O
11, Sb
2O
3, Sc
2O
3, Si
3N
4, SiO, Si
2O
3, SiO
2, SrF
2, Al
2O
3, Substance1, Substance2, SubstanceM1, SubstanceH4, Ta
2O
5, TiO
2, TiN, TlCl, ThF
4, ThO
2, V
2O
5, WO
3, YF
3, Y
2O
3, YbF
3, Yb
2O
3, ZnS, ZnSe, ZrO
2One of them.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2004100069183A CN1661820A (en) | 2004-02-26 | 2004-02-26 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2004100069183A CN1661820A (en) | 2004-02-26 | 2004-02-26 | Light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1661820A true CN1661820A (en) | 2005-08-31 |
Family
ID=35010992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2004100069183A Pending CN1661820A (en) | 2004-02-26 | 2004-02-26 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1661820A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101916818A (en) * | 2010-07-20 | 2010-12-15 | 武汉迪源光电科技有限公司 | Light-emitting diode with gradually changed refractive index of light-emitting layer |
| CN102255025A (en) * | 2010-05-18 | 2011-11-23 | 展晶科技(深圳)有限公司 | Light emitting diode |
| CN103094442A (en) * | 2013-01-31 | 2013-05-08 | 马鞍山圆融光电科技有限公司 | Nitride light emitting diode (LED) and preparation method thereof |
| US9685633B2 (en) | 2012-05-15 | 2017-06-20 | Osram Oled Gmbh | Organic light-emitting element and method of producing an organic light-emitting element |
| CN111474608A (en) * | 2020-04-26 | 2020-07-31 | 莱特巴斯光学仪器（镇江）有限公司 | Far infrared optical antireflection hard film for mould pressing aspheric lens |
| CN112142466A (en) * | 2019-06-26 | 2020-12-29 | 中国科学院上海硅酸盐研究所 | Lead niobate ytterbium acid based antiferroelectric ceramic material and preparation method thereof |
-
2004
- 2004-02-26 CN CN2004100069183A patent/CN1661820A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102255025A (en) * | 2010-05-18 | 2011-11-23 | 展晶科技(深圳)有限公司 | Light emitting diode |
| CN101916818A (en) * | 2010-07-20 | 2010-12-15 | 武汉迪源光电科技有限公司 | Light-emitting diode with gradually changed refractive index of light-emitting layer |
| US9685633B2 (en) | 2012-05-15 | 2017-06-20 | Osram Oled Gmbh | Organic light-emitting element and method of producing an organic light-emitting element |
| CN103094442A (en) * | 2013-01-31 | 2013-05-08 | 马鞍山圆融光电科技有限公司 | Nitride light emitting diode (LED) and preparation method thereof |
| CN112142466A (en) * | 2019-06-26 | 2020-12-29 | 中国科学院上海硅酸盐研究所 | Lead niobate ytterbium acid based antiferroelectric ceramic material and preparation method thereof |
| CN112142466B (en) * | 2019-06-26 | 2021-05-25 | 中国科学院上海硅酸盐研究所 | A kind of lead ytterbium niobate-based antiferroelectric ceramic material and preparation method thereof |
| CN111474608A (en) * | 2020-04-26 | 2020-07-31 | 莱特巴斯光学仪器（镇江）有限公司 | Far infrared optical antireflection hard film for mould pressing aspheric lens |
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