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CN1553575A - Surge-free circuit capable of reducing electromagnetic interference - Google Patents

Surge-free circuit capable of reducing electromagnetic interference Download PDF

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CN1553575A
CN1553575A CNA031379923A CN03137992A CN1553575A CN 1553575 A CN1553575 A CN 1553575A CN A031379923 A CNA031379923 A CN A031379923A CN 03137992 A CN03137992 A CN 03137992A CN 1553575 A CN1553575 A CN 1553575A
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edge
logic
pulse signal
timing delay
delay device
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CN1254016C (en
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小池秀治
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Winbond Electronics Corp
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Abstract

The invention discloses a surge-free circuit capable of reducing electromagnetic interference, which comprises a first trigger stage, a time sequence delay device, a logic group and a second trigger stage. The first flip-flop stage is triggered by a first edge of a pulse signal. The timing delay device is electrically connected to the first flip-flop stage and is triggered by a second edge of the pulse signal relative to the first edge. The timing delay device shifts the input signal switching the logic level between the first edge and the second edge of the pulse signal by half a period. The logic group is electrically connected to the timing delay circuit. The second flip-flop stage is electrically connected to the logic group and is triggered by a first edge of the pulse signal.

Description

可降低电磁干扰的无突波电路Glitch-free circuitry to reduce EMI

技术领域technical field

本发明是关于一种同步电路,特别是关于一种在内部电路通过消除突波以维持低电磁干扰的逻辑电路。The present invention relates to a synchronous circuit, in particular to a logic circuit which maintains low electromagnetic interference by eliminating surges in the internal circuit.

背景技术Background technique

同步电路由于具有快速、容易设计和易于由CAD工具处理的特点,因此已被广泛使用于VLSI和ULSI的设计。然而同步电路具有一些本质上的问题,例如时钟脉冲相位差和竞速问题(clock skew andracing problem),很大的切换电流、大功率消耗和内部逻辑门间的突波。该内部逻辑门的突波通常是起因于两个输入信号在很短之间内切换至不同的逻辑电平。在大多数的情形下,该内部逻辑门的突波会导致电磁干扰。该电磁干扰正比于

Figure A0313799200041
其中T代表突波的宽度。Synchronous circuits have been widely used in VLSI and ULSI designs due to their fast, easy design and ease of handling by CAD tools. However, synchronous circuits have some inherent problems, such as clock skew and racing problems, large switching currents, high power consumption, and surges between internal logic gates. The glitch of the internal logic gate is usually caused by two input signals switching to different logic levels within a short period of time. In most cases, glitches in the internal logic gates cause electromagnetic interference. This EMI is proportional to
Figure A0313799200041
Where T represents the width of the burst.

请参考图1,其显示包含一第一触发器级11、一逻辑群12和一第二触发器级13的逻辑电路。对同步的功能而言,在第一触发器级11的触发器111、112和113及在第二触发器级13的触发器131均被设计为上升沿触发的特性。一与非门(NAND gate)121的输入端连接至触发器111和112的输出A和~B。一与非门122的输入端连接至该与非门121的输出D和触发器112的输出B。一或非门(NORgate)123的输入端连接至NAND门122的输出E和触发器113的输出C。最后,该NOR门123的输出F作为该触发器131的输入。Please refer to FIG. 1 , which shows a logic circuit including a first flip-flop stage 11 , a logic group 12 and a second flip-flop stage 13 . For the synchronous function, the flip-flops 111 , 112 and 113 in the first flip-flop stage 11 and the flip-flop 131 in the second flip-flop stage 13 are all designed to be rising edge triggered. An input terminal of a NAND gate (NAND gate) 121 is connected to outputs A and -B of flip-flops 111 and 112 . An input terminal of a NAND gate 122 is connected to the output D of the NAND gate 121 and the output B of the flip-flop 112 . An input terminal of a NOR gate (NORgate) 123 is connected to the output E of the NAND gate 122 and the output C of the flip-flop 113 . Finally, the output F of the NOR gate 123 is used as the input of the flip-flop 131 .

图2显示图1的逻辑电路的时序图。其中信号C的电压在脉冲信号(标示为CK)的上升沿由高电平降至低电平,但该NOR门123的另一输入端E的电压在隔一时间差后,在脉冲信号的上升沿由低电平升至高电平。该时间差导致信号F出现突波,而该突波进一步导致电磁干扰。FIG. 2 shows a timing diagram of the logic circuit of FIG. 1 . Wherein the voltage of the signal C drops from high level to low level at the rising edge of the pulse signal (marked as CK), but the voltage of the other input terminal E of the NOR gate 123 is at the rising edge of the pulse signal after a time difference. Rise from low level to high level. This time difference causes a spike in the signal F, which further causes electromagnetic interference.

换言之,现有电路的各输入端若在不同时间点将其电压切换至相反的逻辑电平,势必将导致内部电路出现突波。为解决上述问题,本发明提出一新颖的无突波电路,以降低电磁干扰。In other words, if the input terminals of the existing circuit switch their voltages to opposite logic levels at different time points, it will inevitably cause surges in the internal circuit. In order to solve the above problems, the present invention proposes a novel surge-free circuit to reduce electromagnetic interference.

发明内容Contents of the invention

本发明的主要目的是提供一种无突波电路,用于满足市场上对于低电磁干扰的需求。The main purpose of the present invention is to provide a surge-free circuit for meeting the market demand for low electromagnetic interference.

本发明的第二目的是提供一种无突波电路,其可避免在电路仿真时产生未知的状态。A second object of the present invention is to provide a glitch-free circuit, which can avoid unknown states during circuit simulation.

为了达到上述目的,本发明公开的可降低电磁干扰的无突波电路包含一第一触发器级、一时序延迟装置、一逻辑群和一第二触发器级。该第一触发器级由一脉冲信号的第一边沿所触发。该时序延迟装置电气连接至该第一触发器级,且由该脉冲信号的相对于该第一边沿的一第二边沿所触发。该时序延迟装置将在该脉冲信号的第一边沿至第二边沿间将输入信号切换逻辑电平偏移半个周期。该逻辑群电气连接至该时序延迟电路。该第二触发器级电气连接至该逻辑群,且由该脉冲信号的第一边沿所触发。In order to achieve the above purpose, the surge-free circuit capable of reducing electromagnetic interference disclosed by the present invention includes a first flip-flop stage, a timing delay device, a logic group and a second flip-flop stage. The first flip-flop stage is triggered by a first edge of a pulse signal. The timing delay device is electrically connected to the first flip-flop stage, and is triggered by a second edge of the pulse signal relative to the first edge. The timing delay device shifts the switching logic level of the input signal by half a period between the first edge and the second edge of the pulse signal. The logic group is electrically connected to the timing delay circuit. The second flip-flop stage is electrically connected to the logic group and is triggered by the first edge of the pulse signal.

该脉冲信号的第一边沿可选自脉冲信号的上升沿或下降沿,而该脉冲信号的第二边沿为其未选择的部分。The first edge of the pulse signal can be selected from a rising edge or a falling edge of the pulse signal, and the second edge of the pulse signal is an unselected part thereof.

附图说明Description of drawings

本发明将依照附图来说明,其中:The invention will be described with reference to the accompanying drawings, in which:

图1是一现有电路图;Fig. 1 is an existing circuit diagram;

图2显示图1的逻辑电路的时序图;Fig. 2 shows the timing diagram of the logic circuit of Fig. 1;

图3显示本发明的第一实施例的无突波电路;Fig. 3 shows the surge-free circuit of the first embodiment of the present invention;

图4显示图3的逻辑电路的时序图;Fig. 4 shows the timing diagram of the logic circuit of Fig. 3;

图5(a)和5(b)显示本发明的第二实施例的时序延迟装置的电路图;及5(a) and 5(b) show the circuit diagram of the timing delay device of the second embodiment of the present invention; and

图6(a)和6(b)显示本发明的第三实施例的时序延迟装置的电路图。6(a) and 6(b) are circuit diagrams of a timing delay device according to a third embodiment of the present invention.

具体实施方式Detailed ways

图3显示本发明的第一实施例的无突波电路。和图1的现有电路不同的是本发明在该第一触发器级11和逻辑群12之间加入一时序延迟装置31。在该时序延迟装置31中的第一数据锁存器311和313(也可使用触发器)和第二数据锁存器312(也可使用触发器)是由脉冲信号的下降沿所触发。该第一数据锁存器311的输入端另连接至一预设端点(标示为数据锁存器的S点),其代表当脉冲信号为高电平时,若输入A在目前为逻辑高电平,或输入A在前一个周期为逻辑高电平然而在本周期为逻辑低电平,则输出A1亦为逻辑高电平。该第二数据锁存器312的输入端另连接至一复位端点(标示为该数据锁存器的RN),其代表当脉冲信号为低电平,若此时输入B为低电平,或输入B在前一个周期为低电平但在此周期为高电平,则输出BO为逻辑低电平。FIG. 3 shows the glitch-free circuit of the first embodiment of the present invention. The difference from the conventional circuit in FIG. 1 is that the present invention adds a timing delay device 31 between the first flip-flop stage 11 and the logic group 12 . The first data latches 311 and 313 (a flip-flop can also be used) and the second data latch 312 (a flip-flop can also be used) in the timing delay device 31 are triggered by the falling edge of the pulse signal. The input terminal of the first data latch 311 is further connected to a preset terminal point (marked as the S point of the data latch), which represents that when the pulse signal is at a high level, if the input A is currently at a logic high level , or input A was logic high level in the previous cycle but is logic low level in this cycle, then output A1 is also logic high level. The input end of this second data latch 312 is connected to a reset terminal (marked as the RN of this data latch) in addition, and it represents when the pulse signal is low level, if this moment input B is low level, or Input B was low in the previous cycle but high in this cycle, then output BO is logic low.

该数据锁存器313的输入端另连接至其预设端点,其显示当脉冲信号为高电平,若此时输入C为高电平,或输入C在上一个周期为高电平但此时为低电平,则输出C1为高电平。选择将输入端连接至该预设或复位端点的考虑在于该数据锁存器连接至哪一类型的逻辑门。若该逻辑门输出至一与(AND)门或与非(NAND)门,则将输入端连接至该复位端点。若该数据锁存器输出至一或(OR)门或者或非(NOR)门,则输入端连接至预设端子。The input terminal of the data latch 313 is connected to its preset terminal in addition, and it shows that when the pulse signal is high level, if the input C is high level at this time, or the input C was high level in the previous cycle but this time When it is low level, the output C1 is high level. The consideration in choosing to connect the input to the preset or reset terminal is what type of logic gate the data latch is connected to. If the logic gate outputs to an AND gate or a NAND gate, the input terminal is connected to the reset terminal. If the data latch outputs to an OR gate or a NOR gate, the input terminal is connected to the preset terminal.

图4显示图3的逻辑电路的时序图。很明显,在图2的信号F的突波消失了,且该结果消除了前述的电磁干扰。换言之,该时序延迟装置31的第一数据锁存器313将该信号C1的下降沿偏移半个周期,以避免信号C1在脉冲信号的高电平时产生逻辑电平的变换。因此,即使信号E相对于信号C一段时间后开始产生由逻辑低电平至高电平的变换,仍不至于产生突波。FIG. 4 shows a timing diagram of the logic circuit of FIG. 3 . It is obvious that the spike in signal F in FIG. 2 disappears, and this result eliminates the aforementioned electromagnetic interference. In other words, the first data latch 313 of the timing delay device 31 shifts the falling edge of the signal C1 by half a cycle, so as to avoid the logic level transition of the signal C1 when the pulse signal is at a high level. Therefore, even if the signal E starts to change from a logic low level to a high level after a period of time relative to the signal C, the surge will not occur.

图5(a)和图5(b)显示本发明的第二实施例的无突波电路。图5(a)显示该数据锁存器311和313的一可行的实施方式,其包含一脉冲控制锁存器51。当脉冲信号在低电平时,该脉冲控制锁存器51表现出一缓冲器的行为。然而,当脉冲信号在高电平时,若输入A此时为逻辑高电平,或输入A在上一周期为逻辑高电平但本周期为逻辑低电平,则输出A1显示一逻辑高电平。图5(b)显示该第二数据锁存器312另一可行的实施方式,其包含另一脉冲控制锁存器52。当脉冲信号为低电平时,该脉冲控制锁存器52表现出一缓冲器的行为。然而当该脉冲信号为高电平,若输入B此时为逻辑低电平,或输入B在前一周期为逻辑低电平但本周期为逻辑高电平,则输出B0显示一逻辑低电平。FIG. 5(a) and FIG. 5(b) show the surge-free circuit of the second embodiment of the present invention. FIG. 5( a ) shows a possible implementation of the data latches 311 and 313 , which includes a pulse-controlled latch 51 . When the pulse signal is low, the pulse-controlled latch 51 exhibits a buffer behavior. However, when the pulse signal is at a high level, if the input A is at a logic high level at this time, or if the input A was at a logic high level in the previous cycle but is at a logic low level in this cycle, the output A1 will display a logic high level. flat. FIG. 5( b ) shows another possible implementation of the second data latch 312 , which includes another pulse-controlled latch 52 . When the pulse signal is low, the pulse-controlled latch 52 exhibits a buffer behavior. However, when the pulse signal is high, if input B is logic low at this time, or input B was logic low in the previous cycle but this cycle is logic high, then output B0 shows a logic low flat.

图6(a)和图6(b)显示本发明的第三实施例的时序延迟装置的电路图。图6(a)显示该第一数据锁存器311和313的一可能的实施方式,其包含一脉冲控制互补金属氧化物半导体(也称为C2MOS)61。当脉冲信号为低电平,该脉冲控制互补金属氧化物半导体61表现出一缓冲器的行为。然而,当脉冲信号为高电平时,若输入A此时为逻辑高电平,或输入A在上一个周期为逻辑高电平但目前因杂散电容的电荷储存而为逻辑低电平,则输出A1显示出一逻辑高电平。图6(b)显示该第二数据锁存器312的一可能的实施方式,其包含一脉冲控制金属氧化物半导体(也称为C2MOS)62。当脉冲信号为低电平,该脉冲控制金属氧化物半导体62表现出一缓冲器的功能。然而当脉冲信号为高电平时,若输入B此时为逻辑低电平,或输入B在上一个周期为逻辑低电平但目前周期因杂散电容的电荷储存作用而为逻辑高电平,则输出BO显示为一逻辑低电平。FIG. 6( a ) and FIG. 6( b ) are circuit diagrams of a timing delay device according to a third embodiment of the present invention. FIG. 6( a ) shows a possible implementation of the first data latches 311 and 313 comprising a pulse-controlled complementary metal-oxide-semiconductor (also known as C 2 MOS) 61 . When the pulse signal is at low level, the pulse controls the CMOS 61 to behave as a buffer. However, when the pulse signal is high, if input A is logic high at this time, or input A was logic high in the previous cycle but is currently logic low due to charge storage in stray capacitance, then Output A1 exhibits a logic high level. FIG. 6( b ) shows a possible implementation of the second data latch 312 comprising a pulsed metal oxide semiconductor (also called C 2 MOS) 62 . When the pulse signal is at low level, the pulse controls the MOS 62 to function as a buffer. However, when the pulse signal is at a high level, if the input B is at a logic low level at this time, or the input B was at a logic low level in the previous cycle but the current cycle is at a logic high level due to the charge storage effect of the stray capacitance, Then the output BO shows a logic low level.

本发明的另一优点在于仿真画面将更容易阅读。在大多数的情况下若仿真画面因突波而产生未知的状态,该未知状态将传播至其所连接的逻辑门而使仿真波形很难阅读,且使设计者无法找出原始突波出现的位置。本发明可避免突波的产生,且提供设计者一更清楚的仿真环境,以方便设计者对其电路进行检错。Another advantage of the invention is that the simulation screen will be easier to read. In most cases, if the simulation screen has an unknown state due to a surge, the unknown state will propagate to the logic gates connected to it, making the simulation waveform difficult to read, and making it impossible for the designer to find out where the original surge occurred Location. The present invention can avoid the generation of surge, and provide a designer with a clearer simulation environment, so that the designer can conveniently detect the error of his circuit.

本发明的技术内容及技术特点已公开如上,然而本领域的熟练技术人员仍可能基于本发明的教示及公开而作种种不背离本发明精神的替换及修饰。因此,本发明的保护范围应不限于实施例所公开的内容,而应包括各种不背离本发明的替换及修饰,并为本专利申请的权利要求所涵盖。The technical content and technical features of the present invention have been disclosed above, but those skilled in the art may still make various replacements and modifications based on the teaching and disclosure of the present invention without departing from the spirit of the present invention. Therefore, the protection scope of the present invention should not be limited to the content disclosed in the embodiments, but should include various replacements and modifications that do not depart from the present invention, and are covered by the claims of this patent application.

Claims (11)

1.一种可降低电磁干扰的无突波电路,包含:一第一触发器级,由一脉冲信号的第一边沿所触发;一逻辑群;和一第二触发器级,电气连接至该逻辑群,且由该脉冲信号的第一边沿所触发,其特征在于:1. A surge-free circuit capable of reducing electromagnetic interference, comprising: a first flip-flop stage, triggered by the first edge of a pulse signal; a logic group; and a second flip-flop stage, electrically connected to the Logic group, and triggered by the first edge of the pulse signal, characterized in that: 还包括有一时序延迟装置,电气连接至该第一触发器级与该逻辑群之间,且由该脉冲信号的相对于该第一边沿的一第二边沿所触发,该时序延迟装置在该脉冲信号的第一边沿至第二边沿间将切换逻辑电平的输入信号偏移半个周期。Also includes a timing delay device, electrically connected between the first flip-flop stage and the logic group, and triggered by a second edge of the pulse signal relative to the first edge, the timing delay device is at the pulse The input signal switching logic level is shifted by half period between the first edge and the second edge of the signal. 2.根据权利要求1所述的无突波电路,其特征在于所述时序延迟装置包含一第一触发器,若该时序延迟装置的输入信号在该脉冲信号的第一边沿之前为逻辑高电平,则该第一触发器在该脉冲信号的第一边沿至第二边沿之间输出一逻辑高电平。2. The glitch-free circuit according to claim 1, wherein the timing delay device comprises a first flip-flop, if the input signal of the timing delay device is logic high before the first edge of the pulse signal level, the first flip-flop outputs a logic high level between the first edge and the second edge of the pulse signal. 3.根据权利要求1所述的无突波电路,其特征在于所述时序延迟装置包含一第一数据锁存器,若该时序延迟装置的输入信号在该脉冲信号的第一边沿之前为逻辑高电平,则该第一数据锁存器在该脉冲信号的第一边沿至第二边沿之间输出一逻辑高电平。3. The glitch-free circuit according to claim 1, wherein the timing delay device comprises a first data latch, if the input signal of the timing delay device is logic before the first edge of the pulse signal high level, the first data latch outputs a logic high level between the first edge and the second edge of the pulse signal. 4.根据权利要求1所述的无突波电路,其特征在于所述时序延迟装置包含一第二触发器,若该时序延迟装置的输入信号在该脉冲信号的第一边沿之前为逻辑低电平,则该第二触发器在该脉冲信号的第一边沿至第二边沿之间输出一逻辑低电平。4. The glitch-free circuit according to claim 1, wherein the timing delay device comprises a second flip-flop, if the input signal of the timing delay device is logic low before the first edge of the pulse signal level, the second flip-flop outputs a logic low level between the first edge and the second edge of the pulse signal. 5.根据权利要求1所述的无突波电路,其特征在于所述时序延迟装置包含一第二数据锁存器,若该时序延迟装置的输入信号在该脉冲信号的第一边沿之前为逻辑低电平,则该第二数据锁存器在该脉冲信号的第一边沿至第二边沿之间输出一逻辑低电平。5. The glitch-free circuit according to claim 1, wherein the timing delay device comprises a second data latch, if the input signal of the timing delay device is logic before the first edge of the pulse signal low level, the second data latch outputs a logic low level between the first edge and the second edge of the pulse signal. 6.根据权利要求3所述的无突波电路,其特征在于所述第一数据锁存器电连接至该逻辑群的一或门或者或非门。6. The glitch-free circuit according to claim 3, wherein the first data latch is electrically connected to an OR gate or a NOR gate of the logic group. 7.根据权利要求5所述的无突波电路,其特征在于所述第二数据锁存器电连接至该逻辑群的一与门或与非门。7. The glitch-free circuit of claim 5, wherein the second data latch is electrically connected to an AND gate or a NAND gate of the logic group. 8.根据权利要求3所述的无突波电路,其特征在于所述第一数据锁存器电连接其输入端至其预设端。8. The glitch-free circuit according to claim 3, wherein the first data latch is electrically connected to its input terminal to its preset terminal. 9.根据权利要求5所述的无突波电路,其特征在于所述第二数据锁存器电连接其输入端至其复位端。9. The glitch-free circuit according to claim 5, wherein the second data latch is electrically connected from its input terminal to its reset terminal. 10.根据权利要求1所述的无突波电路,其特征在于所述时序延迟装置包含一脉冲控制锁存器。10. The glitch-free circuit of claim 1, wherein the timing delay device comprises a pulse-controlled latch. 11.根据权利要求1所述的无突波电路,其特征在于所述时序延迟装置包含一脉冲控制互补金属氧化物半导体。11. The glitch-free circuit of claim 1, wherein the timing delay means comprises a pulse-controlled CMOS.
CN 03137992 2003-06-02 2003-06-02 Glitch-free circuitry to reduce EMI Expired - Lifetime CN1254016C (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100495917C (en) * 2006-04-03 2009-06-03 凌阳科技股份有限公司 A surge separation circuit
CN103051171A (en) * 2011-10-12 2013-04-17 聚积科技股份有限公司 Control circuit for reducing electromagnetic interference
CN107250987A (en) * 2015-01-22 2017-10-13 美商新思科技有限公司 X Propagation in Simulation

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100495917C (en) * 2006-04-03 2009-06-03 凌阳科技股份有限公司 A surge separation circuit
CN103051171A (en) * 2011-10-12 2013-04-17 聚积科技股份有限公司 Control circuit for reducing electromagnetic interference
CN103051171B (en) * 2011-10-12 2015-03-11 聚积科技股份有限公司 Control circuit for reducing electromagnetic interference
CN107250987A (en) * 2015-01-22 2017-10-13 美商新思科技有限公司 X Propagation in Simulation
CN107250987B (en) * 2015-01-22 2021-01-22 美商新思科技有限公司 X propagation in simulation

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