CN1333444C - Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents - Google Patents
Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents Download PDFInfo
- Publication number
- CN1333444C CN1333444C CNB2003801052037A CN200380105203A CN1333444C CN 1333444 C CN1333444 C CN 1333444C CN B2003801052037 A CNB2003801052037 A CN B2003801052037A CN 200380105203 A CN200380105203 A CN 200380105203A CN 1333444 C CN1333444 C CN 1333444C
- Authority
- CN
- China
- Prior art keywords
- slurry
- acid
- wafer
- amino
- piperazine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 73
- 239000010949 copper Substances 0.000 title claims description 64
- 229910052802 copper Inorganic materials 0.000 title claims description 57
- 238000005498 polishing Methods 0.000 title claims description 57
- 239000003795 chemical substances by application Substances 0.000 title abstract description 6
- 239000000126 substance Substances 0.000 title description 7
- 239000002002 slurry Substances 0.000 claims abstract description 136
- 238000000034 method Methods 0.000 claims abstract description 64
- 239000000463 material Substances 0.000 claims abstract description 61
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 239000002245 particle Substances 0.000 claims abstract description 26
- 239000007800 oxidant agent Substances 0.000 claims abstract description 17
- IHPYMWDTONKSCO-UHFFFAOYSA-N 2,2'-piperazine-1,4-diylbisethanesulfonic acid Chemical compound OS(=O)(=O)CCN1CCN(CCS(O)(=O)=O)CC1 IHPYMWDTONKSCO-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000002253 acid Substances 0.000 claims abstract description 12
- 239000002738 chelating agent Substances 0.000 claims abstract description 11
- 239000004094 surface-active agent Substances 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims abstract description 7
- DVLFYONBTKHTER-UHFFFAOYSA-N 3-(N-morpholino)propanesulfonic acid Chemical compound OS(=O)(=O)CCCN1CCOCC1 DVLFYONBTKHTER-UHFFFAOYSA-N 0.000 claims abstract description 3
- INEWUCPYEUEQTN-UHFFFAOYSA-N 3-(cyclohexylamino)-2-hydroxy-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(O)CNC1CCCCC1 INEWUCPYEUEQTN-UHFFFAOYSA-N 0.000 claims abstract description 3
- NUFBIAUZAMHTSP-UHFFFAOYSA-N 3-(n-morpholino)-2-hydroxypropanesulfonic acid Chemical compound OS(=O)(=O)CC(O)CN1CCOCC1 NUFBIAUZAMHTSP-UHFFFAOYSA-N 0.000 claims abstract description 3
- PJWWRFATQTVXHA-UHFFFAOYSA-N Cyclohexylaminopropanesulfonic acid Chemical compound OS(=O)(=O)CCCNC1CCCCC1 PJWWRFATQTVXHA-UHFFFAOYSA-N 0.000 claims abstract description 3
- MKWKNSIESPFAQN-UHFFFAOYSA-N N-cyclohexyl-2-aminoethanesulfonic acid Chemical compound OS(=O)(=O)CCNC1CCCCC1 MKWKNSIESPFAQN-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052751 metal Inorganic materials 0.000 claims description 49
- 239000002184 metal Substances 0.000 claims description 48
- -1 viscous regulator Substances 0.000 claims description 35
- 239000000203 mixture Substances 0.000 claims description 30
- 150000002500 ions Chemical class 0.000 claims description 26
- 239000000872 buffer Substances 0.000 claims description 23
- CCIVGXIOQKPBKL-UHFFFAOYSA-N ethanesulfonic acid Chemical compound CCS(O)(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-N 0.000 claims description 20
- 239000003989 dielectric material Substances 0.000 claims description 19
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 16
- 230000001590 oxidative effect Effects 0.000 claims description 16
- 230000004888 barrier function Effects 0.000 claims description 15
- 239000003112 inhibitor Substances 0.000 claims description 13
- 239000006061 abrasive grain Substances 0.000 claims description 11
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical class OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 10
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- 239000000080 wetting agent Substances 0.000 claims description 9
- HSXUNHYXJWDLDK-UHFFFAOYSA-N 2-hydroxypropane-1-sulfonic acid Chemical compound CC(O)CS(O)(=O)=O HSXUNHYXJWDLDK-UHFFFAOYSA-N 0.000 claims description 8
- 239000004471 Glycine Substances 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 125000000217 alkyl group Chemical group 0.000 claims description 7
- 150000003839 salts Chemical class 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 125000003118 aryl group Chemical group 0.000 claims description 6
- 239000001257 hydrogen Chemical group 0.000 claims description 6
- 150000002431 hydrogen Chemical group 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims description 5
- 239000000314 lubricant Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000000344 soap Substances 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 claims description 4
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052783 alkali metal Inorganic materials 0.000 claims description 4
- 150000001340 alkali metals Chemical group 0.000 claims description 4
- 150000001412 amines Chemical group 0.000 claims description 4
- 230000006872 improvement Effects 0.000 claims description 4
- 150000004968 peroxymonosulfuric acids Chemical class 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 3
- 150000001342 alkaline earth metals Chemical group 0.000 claims description 3
- 150000003863 ammonium salts Chemical class 0.000 claims description 3
- 125000000129 anionic group Chemical group 0.000 claims description 3
- 125000002091 cationic group Chemical group 0.000 claims description 3
- 239000003153 chemical reaction reagent Substances 0.000 claims description 3
- 125000000250 methylamino group Chemical group [H]N(*)C([H])([H])[H] 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- XMGKYXFDYYTZFD-UHFFFAOYSA-N 4-amino-1-hydroxy-2-methylbutane-2-sulfonic acid Chemical compound OCC(C)(S(O)(=O)=O)CCN XMGKYXFDYYTZFD-UHFFFAOYSA-N 0.000 claims description 2
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical group CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 2
- 229920001174 Diethylhydroxylamine Polymers 0.000 claims description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- JGIBNXVWKYGFLY-UHFFFAOYSA-M [NH4+].C(C(=O)[O-])(=O)[O-].[Fe+] Chemical compound [NH4+].C(C(=O)[O-])(=O)[O-].[Fe+] JGIBNXVWKYGFLY-UHFFFAOYSA-M 0.000 claims description 2
- 150000001447 alkali salts Chemical class 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- APUPEJJSWDHEBO-UHFFFAOYSA-P ammonium molybdate Chemical compound [NH4+].[NH4+].[O-][Mo]([O-])(=O)=O APUPEJJSWDHEBO-UHFFFAOYSA-P 0.000 claims description 2
- 239000011609 ammonium molybdate Substances 0.000 claims description 2
- 235000018660 ammonium molybdate Nutrition 0.000 claims description 2
- 229940010552 ammonium molybdate Drugs 0.000 claims description 2
- UMEAURNTRYCPNR-UHFFFAOYSA-N azane;iron(2+) Chemical compound N.[Fe+2] UMEAURNTRYCPNR-UHFFFAOYSA-N 0.000 claims description 2
- GLMQHZPGHAPYIO-UHFFFAOYSA-L azanium;2-hydroxypropane-1,2,3-tricarboxylate;iron(2+) Chemical compound [NH4+].[Fe+2].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O GLMQHZPGHAPYIO-UHFFFAOYSA-L 0.000 claims description 2
- KQNZLOUWXSAZGD-UHFFFAOYSA-N benzylperoxymethylbenzene Chemical compound C=1C=CC=CC=1COOCC1=CC=CC=C1 KQNZLOUWXSAZGD-UHFFFAOYSA-N 0.000 claims description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 claims description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 2
- FVCOIAYSJZGECG-UHFFFAOYSA-N diethylhydroxylamine Chemical compound CCN(O)CC FVCOIAYSJZGECG-UHFFFAOYSA-N 0.000 claims description 2
- 239000002223 garnet Substances 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 2
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 229940074355 nitric acid Drugs 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 claims description 2
- 239000001230 potassium iodate Substances 0.000 claims description 2
- 235000006666 potassium iodate Nutrition 0.000 claims description 2
- 229940093930 potassium iodate Drugs 0.000 claims description 2
- 239000004323 potassium nitrate Substances 0.000 claims description 2
- 235000010333 potassium nitrate Nutrition 0.000 claims description 2
- 229940093928 potassium nitrate Drugs 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 claims description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 claims description 2
- 241001044369 Amphion Species 0.000 claims 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims 2
- 125000000753 cycloalkyl group Chemical group 0.000 claims 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 2
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 claims 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims 1
- 150000001413 amino acids Chemical class 0.000 claims 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims 1
- YAGKRVSRTSUGEY-UHFFFAOYSA-N ferricyanide Chemical compound [Fe+3].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] YAGKRVSRTSUGEY-UHFFFAOYSA-N 0.000 claims 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- 150000003009 phosphonic acids Chemical class 0.000 claims 1
- 239000001103 potassium chloride Substances 0.000 claims 1
- 235000011164 potassium chloride Nutrition 0.000 claims 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims 1
- 235000019394 potassium persulphate Nutrition 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- 229910001930 tungsten oxide Inorganic materials 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 95
- 239000000243 solution Substances 0.000 abstract description 20
- 238000004519 manufacturing process Methods 0.000 abstract description 14
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 abstract description 4
- CBTVGIZVANVGBH-UHFFFAOYSA-N aminomethyl propanol Chemical compound CC(C)(N)CO CBTVGIZVANVGBH-UHFFFAOYSA-N 0.000 abstract description 2
- SXGZJKUKBWWHRA-UHFFFAOYSA-N 2-(N-morpholiniumyl)ethanesulfonate Chemical compound [O-]S(=O)(=O)CC[NH+]1CCOCC1 SXGZJKUKBWWHRA-UHFFFAOYSA-N 0.000 abstract 1
- JKMHFZQWWAIEOD-UHFFFAOYSA-N 2-[4-(2-hydroxyethyl)piperazin-1-yl]ethanesulfonic acid Chemical compound OCC[NH+]1CCN(CCS([O-])(=O)=O)CC1 JKMHFZQWWAIEOD-UHFFFAOYSA-N 0.000 abstract 1
- AJTVSSFTXWNIRG-UHFFFAOYSA-N 2-[bis(2-hydroxyethyl)amino]ethanesulfonic acid Chemical compound OCC[NH+](CCO)CCS([O-])(=O)=O AJTVSSFTXWNIRG-UHFFFAOYSA-N 0.000 abstract 1
- LVQFQZZGTZFUNF-UHFFFAOYSA-N 2-hydroxy-3-[4-(2-hydroxy-3-sulfonatopropyl)piperazine-1,4-diium-1-yl]propane-1-sulfonate Chemical compound OS(=O)(=O)CC(O)CN1CCN(CC(O)CS(O)(=O)=O)CC1 LVQFQZZGTZFUNF-UHFFFAOYSA-N 0.000 abstract 1
- XCBLFURAFHFFJF-UHFFFAOYSA-N 3-[bis(2-hydroxyethyl)azaniumyl]-2-hydroxypropane-1-sulfonate Chemical compound OCCN(CCO)CC(O)CS(O)(=O)=O XCBLFURAFHFFJF-UHFFFAOYSA-N 0.000 abstract 1
- OWXMKDGYPWMGEB-UHFFFAOYSA-N HEPPS Chemical compound OCCN1CCN(CCCS(O)(=O)=O)CC1 OWXMKDGYPWMGEB-UHFFFAOYSA-N 0.000 abstract 1
- DBXNUXBLKRLWFA-UHFFFAOYSA-N N-(2-acetamido)-2-aminoethanesulfonic acid Chemical compound NC(=O)CNCCS(O)(=O)=O DBXNUXBLKRLWFA-UHFFFAOYSA-N 0.000 abstract 1
- YNLCVAQJIKOXER-UHFFFAOYSA-N N-[tris(hydroxymethyl)methyl]-3-aminopropanesulfonic acid Chemical compound OCC(CO)(CO)NCCCS(O)(=O)=O YNLCVAQJIKOXER-UHFFFAOYSA-N 0.000 abstract 1
- JOCBASBOOFNAJA-UHFFFAOYSA-N N-tris(hydroxymethyl)methyl-2-aminoethanesulfonic acid Chemical compound OCC(CO)(CO)NCCS(O)(=O)=O JOCBASBOOFNAJA-UHFFFAOYSA-N 0.000 abstract 1
- 239000007983 Tris buffer Substances 0.000 abstract 1
- 239000006172 buffering agent Substances 0.000 abstract 1
- YCLWMUYXEGEIGD-UHFFFAOYSA-M sodium;2-hydroxy-3-[4-(2-hydroxyethyl)piperazin-1-yl]propane-1-sulfonate Chemical compound [Na+].OCCN1CCN(CC(O)CS([O-])(=O)=O)CC1 YCLWMUYXEGEIGD-UHFFFAOYSA-M 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 40
- 230000008569 process Effects 0.000 description 29
- 239000011889 copper foil Substances 0.000 description 16
- 238000000227 grinding Methods 0.000 description 16
- 230000000694 effects Effects 0.000 description 13
- 238000012545 processing Methods 0.000 description 10
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000001976 improved effect Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000000654 additive Substances 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000008139 complexing agent Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000010954 inorganic particle Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000011265 semifinished product Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 150000001768 cations Chemical class 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000536 complexating effect Effects 0.000 description 3
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 3
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 3
- 229940112669 cuprous oxide Drugs 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical group [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 235000015165 citric acid Nutrition 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 229960004643 cupric oxide Drugs 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical group [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 150000002466 imines Chemical class 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000001508 potassium citrate Substances 0.000 description 2
- 229960002635 potassium citrate Drugs 0.000 description 2
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 description 2
- 235000011082 potassium citrates Nutrition 0.000 description 2
- 229910000160 potassium phosphate Inorganic materials 0.000 description 2
- 235000011009 potassium phosphates Nutrition 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- 159000000000 sodium salts Chemical class 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- 238000006557 surface reaction Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- QZTKDVCDBIDYMD-UHFFFAOYSA-N 2,2'-[(2-amino-2-oxoethyl)imino]diacetic acid Chemical compound NC(=O)CN(CC(O)=O)CC(O)=O QZTKDVCDBIDYMD-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- GBHSCKFAHCEEAZ-UHFFFAOYSA-N 2-[hydroxymethyl(methyl)amino]acetic acid Chemical compound OCN(C)CC(O)=O GBHSCKFAHCEEAZ-UHFFFAOYSA-N 0.000 description 1
- 229940058020 2-amino-2-methyl-1-propanol Drugs 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000004475 Arginine Substances 0.000 description 1
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 description 1
- QRYRORQUOLYVBU-VBKZILBWSA-N Carnosic acid Natural products CC([C@@H]1CC2)(C)CCC[C@]1(C(O)=O)C1=C2C=C(C(C)C)C(O)=C1O QRYRORQUOLYVBU-VBKZILBWSA-N 0.000 description 1
- 108010087806 Carnosine Proteins 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- VMQMZMRVKUZKQL-UHFFFAOYSA-N Cu+ Chemical group [Cu+] VMQMZMRVKUZKQL-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 description 1
- AHLPHDHHMVZTML-BYPYZUCNSA-N L-Ornithine Chemical compound NCCC[C@H](N)C(O)=O AHLPHDHHMVZTML-BYPYZUCNSA-N 0.000 description 1
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 description 1
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 1
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 description 1
- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 description 1
- OUYCCCASQSFEME-QMMMGPOBSA-N L-tyrosine Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-QMMMGPOBSA-N 0.000 description 1
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 description 1
- 239000004472 Lysine Substances 0.000 description 1
- CQOVPNPJLQNMDC-UHFFFAOYSA-N N-beta-alanyl-L-histidine Natural products NCCC(=O)NC(C(O)=O)CC1=CN=CN1 CQOVPNPJLQNMDC-UHFFFAOYSA-N 0.000 description 1
- AHLPHDHHMVZTML-UHFFFAOYSA-N Orn-delta-NH2 Natural products NCCCC(N)C(O)=O AHLPHDHHMVZTML-UHFFFAOYSA-N 0.000 description 1
- UTJLXEIPEHZYQJ-UHFFFAOYSA-N Ornithine Natural products OC(=O)C(C)CCCN UTJLXEIPEHZYQJ-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 description 1
- 229960003121 arginine Drugs 0.000 description 1
- 150000007980 azole derivatives Chemical class 0.000 description 1
- 150000003851 azoles Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- CQOVPNPJLQNMDC-ZETCQYMHSA-N carnosine Chemical compound [NH3+]CCC(=O)N[C@H](C([O-])=O)CC1=CNC=N1 CQOVPNPJLQNMDC-ZETCQYMHSA-N 0.000 description 1
- 229940044199 carnosine Drugs 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 150000004699 copper complex Chemical class 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- GQDHEYWVLBJKBA-UHFFFAOYSA-H copper(ii) phosphate Chemical compound [Cu+2].[Cu+2].[Cu+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O GQDHEYWVLBJKBA-UHFFFAOYSA-H 0.000 description 1
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 description 1
- 229960002433 cysteine Drugs 0.000 description 1
- 235000018417 cysteine Nutrition 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010537 deprotonation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 229960002989 glutamic acid Drugs 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229960002885 histidine Drugs 0.000 description 1
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- PANJMBIFGCKWBY-UHFFFAOYSA-N iron tricyanide Chemical compound N#C[Fe](C#N)C#N PANJMBIFGCKWBY-UHFFFAOYSA-N 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 229960003646 lysine Drugs 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000004573 morpholin-4-yl group Chemical group N1(CCOCC1)* 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229960003104 ornithine Drugs 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229960003975 potassium Drugs 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229960005137 succinic acid Drugs 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 150000003628 tricarboxylic acids Chemical class 0.000 description 1
- 229960004441 tyrosine Drugs 0.000 description 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
A family of slurries useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working slurries, and semiconductor wafers. The slurries of the invention are a solution of initial components, the components comprising: a sulfonated zwitterion selected from 2-(N-Morpholino)ethanesulfonic acid, (3-[N-Morpholino])propanesulfonic acid, 2-[(2-Amino-2-oxoethyl)amino]ethanesulfonic acid, Piperazine-N, N'-bis(2-ethanesulfonic acid), 3-(N-Morpholino)-2-hydroxypropanesulfonic acid, N ,N-Bis(2-hydroxyethyl)-2-aminoethanesulfonic acid, 3-(N-Morpholino)propanesulfonic acid, N-(2-Hydroxyethyl)piperazine-N'-(2-ethanesulfonic acid), N-Tris(hydroxymethyl)methyl-2 aminoethanesulfonic acid, 3-[N ,N-Bis(2-hydroxyethyl)amino]-2-hydroxypropanesulfonic acid, 3-[N -Tris(hydroxymethy I)methylamino)- 2-hydroxypropanesulfonic acid, N-(2-hydroxyethyl)piperazine-N'-(2-hydroxypropanesulfonic acid), Piperazine-N ,N'-bis(2-hydroxypropanesulfonic acid), N-(2-Hydroxyethyl)piperazine-N'-(3-propanesulfonic acid), N-Tris(hydroxymethyl)methyl-3-aminopropanesulfonic acid, 3-[( 1,1 -Dimethy 1- 2-hydroxyethyl)amino]-2-hydroxypropanesulfonic, acid, 2-(N- Cyclohexylamino)ethanesulfonic acid, 3-(Cyclohexylamino)-2-hydroxy-I-propanesulfonic acid, 2-Amino-2-methyl-I-propanol, 3-(Cyclohexylamino)-1-propanesulfonic acid, an oxidizing agent; optionally, a passivating agent; optionally a chelating agent, optionally abrasive particles, optionally a surfactant, optionally a secondary buffering agent and water. The method of the invention comprises the steps of: a] providing a wafer comprising a first material having a surface etched to form a pattern and a second material deposited over the surface of the first material; b] contacting the second material of the wafer with abrasive in the presence of the working slurry.
Description
MULTIPLE-BLADE
The application requires the preference of the U.S. of submission on November 12nd, 2002 in first to file 60/425690.
Background of invention
Invention field
The present invention relates to improved paste compound, be used for the method for chemico-mechanical polishing or graduation semiconductor wafer and the semiconductor wafer that makes according to the method described above.
DESCRIPTION OF THE PRIOR ART
In integrated circuit was made, the semiconductor wafer that is used for the semiconductor manufacturing will pass through countless procedure of processings usually, comprises deposition, Butut and etching step.People such as the concrete steps of these manufacturing semiconductor wafers such as Tonshoff, " Abrasive Machining of Silicon " (attrition process of silicon), be published in Annalsof the International Institution for Production Engineering Research, (volume 39/2/1990) is in the 621-635 page or leaf.In each manufacturing step, need usually or preferably can improve or the exposing surface of refinement wafer, make wafer can be used for subsequently assembling or manufacturing step.In traditional semiconductor device assembling scheme, silicon wafer deposits the conforming layer of two or more separate material through procedure of processing repeatedly, forms the simple layer of sandwich construction jointly.In this process, the conforming layer of first kind of material to be applied to wafer itself usually, perhaps be applied on the existing layer of the intermediate that constitutes by this area any means commonly used, be on layer etched pattern, second kind of material of filling in pattern then.Perhaps, can be on the layer of assembled in advance on the wafer or in wafer, see through the pattern of the roughly uniform thickness that the mask deposition is made up of first kind of material, then can be in the adjacent area of these patterns second kind of material of filling finish processing to this layer.After the deposition step, material that deposits on the wafer surface or layer are carrying out other deposition or subsequently before the procedure of processing, are needing further processing usually.After finishing, outer surface is basic fully smooth, is parallel to the bottom surface of silicon wafer.An instantiation of this process is the damascene process.
In damascene process kind, at oxide dielectric layer (such as SiO
2) middle etched pattern.Then, optional viscous layer and/or the barrier layer of deposition on oxide surface.Typical barrier layer can comprise: tantalum, tantalum nitride, titanium nitride or titanium, or tungsten.Then, above viscous layer and/or barrier layer or top plated metal (such as copper).Remove copper metal and viscous layer and/or barrier region on the dielectric surface of below then, copper metal layer is improved refinement or polishing.Usually, remove abundant surface metal, the outer surface that wafer is exposed is made of metal and oxide dielectric material.Observe from the exposing surface top of wafer, can find the copper metal corresponding to etched pattern, and barrier layer or the dielectric material flat surfaces adjacent with the copper metal.Be positioned at wafer and improve lip-deep copper (or other metals) and have different hardness, be easy to generate controlled corrosion with oxide dielectric material itself.Improve in the method for semiconductor surface and combine physics and chemical process.This process is called as chemical machinery graduation (CMP).The grinding CMP process that is used to improve by the obtained wafer of damascene process must be improved metal (such as copper) and barrier layer or dielectric material simultaneously, and can not produce defective in the surface of any material.Process of lapping must form smooth exposed outer surface on the wafer with metal exposed zone and dielectric material exposed region.
Chemico-mechanical polishing (or graduation) is the vertiginous field of experience in the semiconductor machining (CMP).CMP can provide (mm size) and local (micron is to nano-scale) graduation fully on wafer surface.This graduation improved effect the coverage of dielectric material and metal (such as copper) on the wafer, and increased lithographic printing, the scope of etching and deposition process.A lot of equipment company has all promoted the development of CMP technology by the progress of CMP engineering aspect, and chemical company pays close attention to running stores, such as slurry and polishing pad.Such as, the technology that the traditional C MP method of improvement or refinement formation wafer exposing surface uses the slurry of a large amount of loose abrasive grains that are scattered here and there in the water-bearing media to come the polished wafer surface.Usually, slurry is applied on the polishing pad, and wafer surface is rotated against polishing pad, removes the material that requires from wafer surface.Usually can also contain in this slurry by can with the chemical reagent of wafer surface reaction, to improve metal removal rate.
Newer CMP slurry alternative method is used grinding pad graduation semiconductor surface, thereby does not need to use the above-mentioned slurry that contains by polishing particles.The CMP process report that substitutes is in the world patent WO 97/11484 that announced on March 27th, 1997.Grinding pad has the texturing lapped face, comprises the abrasive grains that is dispersed in the adhesive.In polishing process, grinding pad contact semiconductor wafer surface, existence does not contain the working slurry of additional abrasive grains usually.Aqueous slurry is applied on the wafer surface, and chemistry improves or improve the efficient of removing material from wafer surface by the motion of abrasive body.
Be applicable to that the slurry of said process and above-mentioned slurry or grinding pad all are the aqueous solution of various additives usually, comprise metal chelating agent, oxidant, passivator, surfactant, wetting agent, buffer, the mixing of viscous regulator or these additives.Additive can also comprise can with the reagent of second kind of material reflection, such as the metal or metal alloy conductor on the wafer surface, such as oxidant, reducing agent, passivator or complexing agent.The example of these working slurry can find in the U.S. Patent application of submitting to for 1998 sticking June 24 09/091932.
The variable that may influence wafer CMP processing comprises the selection to contact pressure between wafer surface and the abrasive body, polishing pad is formed, use rudimentary polishing pad, the shape of polishing pad further groove, the slurry medium kind, relative velocity between wafer surface and the abrasive body and relative motion, and the flow velocity of slurry medium.These variablees check and balance, and select according to each metal surface that will polish.
The CMP process can improve the deposition metal level, up to the barrier layer or oxide dielectric material be exposed on the wafer outer surface, this process almost can't go wrong, because the metal pattern on the wafer surface is a submicron order.The removal speed of plated metal should just can make the demand of additional expensive CMP instrument minimize than comparatively fast, and must remove metal fully in the never etched zone.The metal that remains in the etching area must be limited in the separate areas, is continuous in these zones, thereby guarantees suitable conductibility.Therefore, the CMP process must be uniformly, and is controlled, can reappear to nano-grade size in sub-micron.
In above-mentioned CMP process, discoid depression performance, the removal speed of scraping or defective and metal is the criterion of CMP performance.These performance criterions may depend on the use of above-mentioned working slurry and mechanical processing process.Discoid depression is the criterion of the amounts of metal such as copper that are eliminated in contiguous block below the semi-finished product wafer surface or the stitching, and by having removed after surperficial copper or the copper facing barrier layer, the difference in height between copper and barrier layer or the dielectric layer top cloth is represented.Remove speed and be meant the quantity of material that is eliminated in the unit interval.Preferred remove speed greater than at least about 1000 dusts/minute.Lower removal speed, such as per minute hundreds of dust or following be disadvantageous because can cause the overall manufacturing cost (cost of ownership) of wafer to increase like this.
For possibility that is lowered into the plate-like depression and the metal removal rate that increases semiconductor device, the very important point is that the component in the slurry has very narrow concentration range and pH value.The pH of slurry therewith depends on the composition of polished surface layer in the polishing semiconductor device.In most of the cases, must make slurry have suitable pH, form oxide layer surface thereby remove the relative speed of metal oxide with mechanical lapping.Such as, at polishing SiO
2During Deng dielectric material, the pH of slurry helps to form the silanol key usually greater than 10:
SiO
2+ 2H
2O → Si (OH)
4(aqueous solution) pH＜9
Si (OH)
4(aqueous solution)+OH
-→ SiO (OH)
3+ H
2O pH＞9
SiO (OH)
3→ multinuclear material pH＞10.5
2Si (OH)
4(aqueous solution) → (HO)
3Si-O-Si (OH)
3+ H
2O
SiO
2The pH of polishing slurries must could guarantee to form rapidly silicon dioxide greater than 10 after the mechanical polishing surface.
For copper polish slurry, United States Patent (USP) 6117783 shows pH and is approximately 6.0 importance, can form cuprous oxide (I), Cu
2O.Cuprous oxide can only form in the medium that omits alkalescence near neutral.In low pH slurry, may not can form protective oxide on the copper surface, thereby increased oxidant the aggressivity of copper metal is attacked tendency.In high pH slurry, being eliminated the copper that gets off can precipitate from solution, forms attached to unwanted particulate matter on the wafer surface.Therefore, the copper polish slurry of being prepared must have very narrow pH scope, could guarantee CMP high yield afterwards.
Another importance is to regulate the Z electromotive force of slurry by control pH.The Z electromotive force is an interactional electrostatic potential criterion between anionic electric double layer ion and the cation that surrounds inorganic polishing particles in the slurry.The Z electromotive force depends on that polishing body is (such as Al
2O
3, CeO
2, SiO
2Deng) character and the pH of slurry.Slurry with unfavorable Z electromotive force all is unsettled usually, and the result is that particle can sedimentation from slurry or agglomerate.This is very harmful to the performance in the CMP polishing process.
The another kind of criterion of Z electromotive force is the isoelectric point (IEP) of polishing particles.IEP is that the Z potential value is zero pH.The chemical composition and the character of particle have appreciable impact to IEP.Some selected IEP value is: alumina particle is 3.8 to 9.4, and the scope of silica is narrower, is 1.5 to 3.7.
Some metal oxide be 9.5 such as the IEP value of TiO, and pure tungsten approximately is 1.The IEP value of some wide region is the major obstacle that the technical staff controls particle Z electromotive force, and these particles may finally can be attached on the wafer surface.In addition, the Z electromotive force between polishing particles and the wafer can make particle be attracted and attached on the wafer surface, cause carrying out cleaning after CMP, removes the particle that adheres to.
Therefore, keep constant by the slurry pH in the control CMP process, it is very crucial that the Z electromotive force is in the specified scope.
By the working slurry that is applicable to the structuring wafer semi-finished product exposing surface that improves the semiconductor manufacturing is provided, thereby it is desirable improving chemical machinery graduation process, the method of using above-mentioned working slurry to improve the semi-finished product exposing surface of these semiconductors manufacturing wafers also is desirable, preferably has improvement, the metal removal rate that continues.The working slurry more stable than commercially available slurry preferably can be provided.And wish the working slurry that is applicable to said method can be provided, containing metal structuring wafer that can manufacturing has better graduation effect and defective still less.
Summary of the invention
The invention provides improved paste compound, and the method for chemico-mechanical polishing or smooth semiconductor wafer.
Specifically, the invention provides (a) and improve the needed suitable slurry of structuring wafer semi-finished product exposing surface in the semiconductor manufacturing, (b) use this class working slurry to improve the method for structuring wafer semi-finished product exposing surface in the semiconductor manufacturing and the semiconductor wafer that (c) makes according to the method described above.
One aspect of the present invention provides and has been applicable to the working slurry of improving the wafer surface of making semiconductor device, and this slurry comprises following component:
A. sulfonated amphiprotic ion,
B. oxidant,
C. liquid carrier is preferably moisture,
D. Ren Xuan inorganic or organic polishing particles,
E. Ren Xuan chelating agent,
F. Ren Xuan secondary buffer,
G. Ren Xuan metal or metal oxide passivator,
H. Ren Xuan surfactant, viscous regulator, wetting agent, lubricant, soap and analog, and
I. Ren Xuan inhibitor is used to improve metal selective.
The present invention provides the method for improving the wafer surface that is used for producing the semiconductor devices on the other hand, may further comprise the steps:
A) provide by first kind of material and second kind of wafer that material constitutes, first kind of material has the surface that is etched into pattern, and second kind of material is deposited on the surface of first kind of material,
B) be used in combination slurry of the present invention and polishing pad, make second kind of material of its contact wafer, the slurry kind comprise the loose abrasive grains that is dispersed in a large number wherein and
C) when slurry and polishing pad contact wafer exposing surface, the wafer that relatively moves flattens up to wafer, and comprises the zone of first kind of material that at least one exposes and the zone of second kind of material that is exposed.
An alternative embodiment of the invention is the manufactured goods that comprise by the prepared metal surface of slurry of the present invention.
Invention specifies
Have been found that now adding the sulfonated amphiprotic ion in traditional slurry can improve copper removal speed, can also provide cushioning effect to slurry.
The present invention is for improving or refinement is suitable for making semiconductor structure wafer surface of semi-finished working slurry is provided.The present invention also provides method for using these working slurry to improve the semiconductor surface of semi-finished.
The principal character of CMP slurry of the present invention is to comprise sulfonated amphiprotic ion and oxidant.
Though there be not theoretical the support, believe pH that the sulfonated amphiprotic ion can regulate slurry to the scope that requires, thereby promote the copper oxide surface that quilt is ground from the electronic device surface.In addition, zwitterionic feature of the present invention is, has nitrogen and sulfonic acid part, can form copper complex, makes copper be deposited on tendency minimum on the silicon device back side.
Contain such slurry in the composition of the present invention, aqueous slurry preferably, this slurry comprises following component: the sulfonated amphiprotic ion, oxidant, optional inorganic polishing particles, optional chelating agent, optional secondary buffer, optional passivator, optional surfactant, viscous regulator, wetting agent, lubricant, soap and analog.
Use liquid carrier to make slurry.Liquid carrier can be moisture or water-free, if carrier can with used environmentally compatible.Preferred vector is moisture.
The pH of slurry of the present invention preferably changes to 11 from 2.
As discussed above, sulfonated amphiprotic ion of the present invention is effective especially in various CMP slurries, can remove metal level effectively, the dielectric material in barrier layer and the electronic device.Particularly, slurry of the present invention is applicable to the copper on the integrated circuit of removing metal damascene structure.
Generally include at least a solubility sulfonated amphiprotic ion in the CMP slurry of the present invention.The sulfonated amphiprotic ion is with R
1R
2-N-(CR
3R
4)
xSO
3The alkyl acid of M or the form of salt are introduced into,
R wherein
1And R
2Can be alkyl, aryl, hydroxide, hydrogen, heteroatomic ring, aryl rings or alkyl ring structure, R
3And R
4Can be halogen, alkyl, aryl, hydroxide, hydrogen, heteroatomic ring, aryl rings or alkyl ring structure, x be 2 to 4, and M can be hydrogen, alkali metal or alkaline-earth metal, amine or ammonium ion.Preferred sulfonated amphiprotic ion is: 2-(N-morpholino) ethyl sulfonic acid, (the 3-[N-morpholino]) propane sulfonic acid, 2-[(2-amino-2-oxygen ethyl) amino] ethyl sulfonic acid, piperazine-N, N '-two (2-ethanesulfonic acid), 3-(N-morpholino)-2-hydroxy-propanesulfonic acid, N, two (2-the ethoxy)-2-tarines of N-, 3-(N-morpholino) propane sulfonic acid, N-(2-ethoxy) piperazine-N '-(2-ethanesulfonic acid), N-three (methylol) methyl-2-tarine, 3-[N, two (2-ethoxy) amino of N-]-the 2-hydroxy-propanesulfonic acid, 3-[N-three (methylol) methylamino]-the 2-hydroxy-propanesulfonic acid, N-(2-ethoxy) piperazine-N '-(2-hydroxy-propanesulfonic acid), piperazine-N, N '-two (2-hydroxy-propanesulfonic acid), N-(2-ethoxy) piperazine-N '-(3-N-morpholinopropanesulfonic acid), N-three (methylol) methyl-3-aminopropanesulfonicacid acid, 3-[(1,1-dimethyl-2-ethoxy) amino]-the 2-hydroxy-propanesulfonic acid, 2-(N-cyclohexyl amino) ethyl sulfonic acid, 3-(cyclohexyl amino)-2-hydroxyl-1-propane sulfonic acid, 2-amino-2-methyl-1-propanol, 3-(cyclohexyl amino)-1-propane sulfonic acid.
The concentration range of sulfonated amphiprotic ion is very wide.The preferred concentration of sulfonated amphiprotic ion is about 0.01 to 100 grams per liter, is more preferably 0.1 to about 100 grams per liters, more preferably is about 5 to 75 grams per liters, is more preferably about 10 to 50 grams per liters.
Preferably make zwitterionic concentration remain on certain level, can make pH maintain accelerating oxidation copper and the scope of the copper that helps chelating to be eliminated to get off in.
The chemical oxidizing agent that is suitable for comprises: hydrogen peroxide, dichloride copper; Ammonium, the persulfate of sodium and potassium; Ferric trichloride; The potassium ferricyanide; Nitric acid, potassium nitrate, ammonium molybdate, Potassiumiodate, azanol, diethyl hydroxylamine, OXONE (oxone), transition metal complex is such as the iron cyanide, ammonium iron EDTA, ammonium citrate iron, ironic citrate, ammonium oxalate iron, urea-hydrogen peroxide, sodium peroxide, benzyl peroxide, two-tert-butyl peroxide, peracetic acid, a persulfuric acid, two persulfuric acid, acid iodide and salt thereof, and their mixing.The concentration of oxidant is about 0.01 to 50 weight %, preferably 0.02 to 40 weight % in the deionized water.When using hydrogen peroxide as oxidant, the concentration in the aqueous solution (percentage by weight) is normally about 0.5 to 15%, and is preferably about 1.0 to 7.5%, most preferably is about 1.0 to 5.0%.
Can also contain additive in the CMP slurry, such as polishing particles (inorganic or organic abrasive grains), buffer, metal-chelator, passivator, surfactant, viscous regulator, wetting agent, lubricant, soap and analog.
Can also comprise inorganic abrasive particles in the working slurry.These inorganic particles can improve the removal speed of metal and/or dielectric material.The example of these inorganic particles comprises: SiO
2, Al
2O
3, CeO
2, zirconia, calcium carbonate, garnet, silicate and titanium dioxide.The average grain diameter of these inorganic particles should preferably less than about 500 dusts, be more preferably less than about 250 dusts less than about 1000 dusts.Preferably contain in the working slurry less than 10 weight %,, be more preferably less than the inorganic particle of 0.5 weight % preferably less than 1 weight %.Though can in the CMP slurry, add abrasive grains, be to use the CMP process of three-dimensional abrasive particle can be fixed to grinding and polishing pad and the preferred slurry that does not contain grinding agent.
Can in working slurry, add secondary buffer, help control pH.As mentioned above, pH has remarkable influence to the character and the copper removal speed on copper surface.Most preferably buffer that can be compatible with semiconductor need clean after CMP, and the electromotive force minimum that impurity such as alkali metal in the slurry and alkaline-earth metal are reacted.In addition, can regulate most preferred buffer to acid pH scope to approaching neutrality to alkalescence.Monoacid, binary acid and polyacid can be used as buffer, with alkali such as ammonium hydroxide wholly or in part deprotonation reaction take place.These sour ammonium salts are preferred, but can also use the otheralkali metal and the alkali salt of carboxylic acid.Representative example comprises: the salt of carboxylic acid, and such as dicarboxylic acids, tricarboxylic acids and polycarboxylic acid.Preferred compound comprises: such as malonic acid, and oxalic acid, citric acid, tartaric acid, butanedioic acid, malic acid, adipic acid, their salt and mixture.The nitrogen-containing compound that can play cushioning effect in slurry comprises: asparatate, glutamic acid, histidine, lysine, arginine, ornithine, cysteine, tyrosine and carnosine, two (2-ethoxy) imino groups three (methylol) methane, three (methylol) aminomethane, N-(2-acetamido)-2-iminodiacetic acid, 1, two [three (methylol) methylamino] propane of 3-, triethanolamine, N-three (methylol) methylglycine, N, two (2-ethoxy) glycine and the glycine of N-.Can also in slurry of the present invention, use ammonium hydrogen phosphate.
In CMP slurry of the present invention, use chelating agent or complexing agent can strengthen removing the effect of copper from wafer surface.By adding the complexing agent that to combine with copper, thereby improve the copper metal that dissolves in the water or the solubility of cupric oxide, can strengthen the oxidation and the dissolution of copper.
In working slurry of the present invention, the concentration of complexing agent is about 0.01 to 50 weight % all the time.In the graduation process of copper, preferred complexing agent acid or salt are: citric acid, oxalic acid, iminodiacetic acid, 2-ciliatine, amino three (methylene phosphonic acids), 1-hydroxy ethylene-1,1-two-phosphonic acids and diethylidene HN-3 five (methylene phosphonic acid).The concentration of chelating agent is 0.01 to about 50 weight % in the slurry, preferably 0.5 arrives about 10 weight %, most preferably is 1 to about 10 weight %.
The inhibition of corrosion agent or the passivator of copper are well-known.The passivation to a certain extent of known copper energy cuprous oxide is particularly in neutral or subalkaline pH.In working slurry, add passivator and can protect the copper surf zone that does not contact abrasive body as yet, prevent its oxidized dose too early, excessively remove, perhaps the oxidant concentration of control and metal exposing surface reaction.The inhibitor of the most widely used copper is a tolyl-triazole, and mercaptobenzothiazoler and BTA and derivative thereof are called as azole derivatives.The amount of passivator and kind depend in part on the graduation standard (removing speed, surface smoothness and graduation degree) of requirement.Preferred concentration in the working slurry (percentage by weight) is about 0.025 to 0.20%, and is preferably about 0.050 to 0.15%, is more preferably about 0.050 to 0.10%.
Can also contain the surfactant that concentration is about 0.1 to 15 volume % in the slurry of the present invention.The example of surfactant comprises polyethylene glycol, polypropylene glycol, APEO, glycerol, polyoxyethylene lauryl ether, polyoxyethylene cetyl base ether, polyoxyethylene stearyl acyl ether, polyoxyethylene oleyl ether and composition thereof.
Viscous regulator can also be contained in the slurry of the present invention, the viscosity that requires of about 5 to 25 centipoises can be reached.The example of viscous regulator comprises the Polyox that obtains from Union Carbide
TMWith the Carpool that obtains from B.F.Goodrich
TMIt will be appreciated by those skilled in the art that and in working slurry, to add surfactant according to the needs of application-specific, viscous regulator and other known additives.
Can also comprise inhibitor in the slurry of the present invention, suppress in this system polishing multi layer substrate the ability of one or more layers subregion at least.Preferred concentration in the working slurry (percentage by weight) is about 0.025 to 20%, and is preferably about 0.10 to 10%, is more preferably about 0.50 to 5%.
The inhibitor that is suitable for is attracted to the first metal layer, on one or more extra plays of the second layer and/or multi layer substrate, and suppresses the effect that slurry of the present invention is removed these layers to small part.Preferred this inhibitor can suppress the effect that slurry is removed the second layer to small part.
Here used term " suppress to small part " to be meant this system have at least about 5: 1, preferably at least about 10: 1 the first metal layer: the polishing selectivity of the second layer, preferably be about 30: 1 at least, more preferably being about 50: 1 at least, most preferably is about 100: 1 at least.Inhibitor can be the charged nitrogen-containing compound of any suitable cation, is selected from amine, imines, acid amides, acid imide, its polymer and their mixing.The inhibitor that is suitable for also comprises, such as the charged nitrogen-containing compound of cation, is selected from amine, imines, and acid amides, acid imide, its polymer and mixing thereof is characterized in that inhibitor is not sulfur-containing compound or azole compounds.Here used cation is charged be meant part (such as＞1%) inhibitor under the working pH of system of the present invention by protonated.Preferred inhibitor also can have the electric charge with the not polished charged surface opposite of metal level.
Wetting agent can also be contained in the slurry of the present invention, the even cover wafers of slurry surface can be helped.Wetting agent can be a cationic, anionic property, nonionic, both sexes, fluoridize wholly or in part or its mixing.
Can use slurry under about 10 ℃ to 70 ℃ condition, be more preferably about 15 ℃ to 60 ℃, most preferably be about 20 ℃ to 50 ℃.
The present invention provides the method for improving the wafer surface of making semiconductor device on the other hand, may further comprise the steps:
(a) provide by first kind of material and second kind of wafer that material constitutes, first kind of material has the surface that is etched into pattern, and second kind of material is deposited on the surface of first kind of material;
(b) make second kind of material of wafer contact slurry of the present invention and polishing pad, comprise the loose abrasive grains that is dispersed in a large number wherein in the slurry;
(c) when slurry and polishing pad contact wafer exposing surface, the wafer that relatively moves flattens up to wafer, and comprises at least one first kind of material exposed region and second kind of material exposed region.
This method preferably can be improved the surface of semi-finished of Butut wafer.First kind of material normally used the dielectric material on intermediate materials or viscous layer/barrier layer.Some intermediate materials or viscous layer/barrier layer that is suitable for comprises tantalum, titanium, tantalum nitride, titanium nitride.Other intermediate materials or viscosity/barrier layers that are suitable for comprise metal, nitride and silicide.The shape of first kind of material comprises the cloth graph region, grooved area and passage, and other can form the structure of semiconductor device.Second kind of material normally is selected from titanium, silver, aluminium, tungsten, the conductive of material of copper or its alloy.The present invention is specially adapted to improve its resistance value usually less than the conductive of material surface of about 0.1 ohmcm.Generally speaking, preferred dielectric material has the dielectric constant less than about 5.
Consider that from this respect the working slurry that contains sulfonated amphiprotic ion and inorganic particle as mentioned above.
Motion between wafer and the polishing pad takes place in about 0.1 to 25 pound/square inch pressure limit, and preferably about 0.2 to 15 pound/square inch most preferably is about 1 to 6 pound/square inch.Wafer and polishing pad can be according to linear modes, circle, and spiral way, inhomogeneous mode, ellipse or arbitrary form rotate against each other and/or move.Chip support or base also can vibrate or vibrate, such as passing through support or base by transmitting ultrasonic vibration.Such as, polishing pad and/or wafer rotate relative to one another, and move along the relative central linear of wafer and polishing pad.Rotation between wafer and the polishing pad or rotating speed can be 1 to 10000 rev/min.The preferred rotating speed of polishing pad is 10 to 1000 rev/mins at least, is more preferably 10 to 250 rev/mins, most preferably is 10 to 60 rev/mins.The preferred rotating speed of wafer is 2 to 1000 rev/mins, more preferably is 5 to 500 rev/mins, is more preferably 10 to 100 rev/mins.
CMP slurry of the present invention can not comprise in use be blended in water-bearing media in inorganic polishing particles.On the contrary, can use the fixed three-dimensional grinding pad that is dispersed with fixing many abrasive grains at least a portion zone of its thickness range, in the graduation process, remove the part particle, expose the more abrasive grains that to realize the graduation function.Comprise in the preferred grinding and polishing pad and be fixed in a large number and be dispersed in abrasive grains in the adhesive.
In fixed abrasive polishing method, between fixed grinding pad and wafer, keep in touch and move, exposing surface up to wafer flattens, and the exposed region that comprises the exposed region of at least one second kind or conductive of material and at least one first kind or dielectric material, and the exposed region of the exposed region of conductive of material and dielectric material is in the same plane.Can be coated with one or more intermediate materials on the dielectric material, such as viscosity or barrier layer.Remove after the excessive conductive of material, do not contain intermediate materials in the exposing surface of dielectric material usually substantially.Perhaps, remove the surface that metal level can only expose intermediate materials.Then, improvement effect meeting exposes dielectric material and metal level on wafer surface continuously.
The grinding pad that uses simultaneously with slurry of the present invention can be circular, such as the mill form.The outer rim of circular millstone is preferably level and smooth, or jaggy.Abrasive body can be ellipse or arbitrary polygon also, and is square such as triangle, rectangle and analogous shape.Perhaps, fixed grinding pad can be a brush, band or roll form, in CMP polishing industry, be commonly called the grinding roll coil of strip.In manufacture process, grind on the roll coil of strip and can be labeled.Can bore a hole to abrasive body, make abrasive coating and/or backing open, allow slurry medium before using, among or pass through afterwards.
Interfacial pressure between abrasive body and the wafer surface (being contact pressure) preferably less than about 15 pounds/square inch, is more preferably less than about 6 pounds/square inch usually less than about 30 pounds/square inch.And in the graduation process, can use two or more processing conditions.Such as, the interfacial pressure in first process segment is greater than second procedure of processing.In the graduation process, can also change the rotation and the translational velocity of wafer and/or grinding pad.
The sunk part of grinding pad can be used as passage, helps working slurry is dispersed on the entire wafer surface.Sunk part can also be as passage, and the grinding agent metallic particles that helps to remove wearing and tearing comes from the chip at wafer and abrasive body interface with other.Sunk part can also avoid being called as in the art the phenomenon of " static friction ", and promptly abrasive body tends to adhere to or be fixed on the wafer surface.
United States Patent (USP) 5177908; 5234867; 5297364; 5486129; 5230184; The method that produces uniform wear speed on polishing target surface and/or pad interface has been discussed in 5245790 and 5562530.These methods are applicable to the present invention.Use band or flaky material feed roller and slurry continuously in the wafer graduation process that changes, can also use band or the volume and the working slurry of the present invention of texturing three-dimensional abrasive complex.
The working slurry amount of the present invention that is applied to wafer surface preferably is enough to help to remove from the surface effect of metal or metal oxide.In most of the cases, the working slurry of the present invention that has capacity.Can also understand, some graduation is used second kind of slurry that may require to have on the graduation interface except slurry of the present invention.This second kind of slurry can be identical with first kind of slurry, or different.Spread the work normally about 10 to 1000 ml/min of flow velocity of slurry, preferably 10 to 500 ml/min are more preferably about 25 to 250 ml/min.
Can estimate the surface smoothness of wafer with known method.A kind of preferable methods is to measure the Rt value of wafer surface, and " roughness " criterion is provided, and expression scraping or other blemish.Preferably improve wafer surface to Rt value and be no more than about 1000 dusts, more preferably be no more than about 100 dusts, more preferably no more than about 50 dusts.
May need many procedure of processings for single semiconductor wafer.Therefore, need higher metal level to remove speed.Use described CMP slurry, remove normally at least 1000 dusts of speed.Divide, preferably be at least 2000 dusts/minute, be more preferably at least 3000 dusts/minute, most preferably be at least 4000 dusts/minute.The kind on CMP instrument and wafer process surface is depended in the variation of metal removal rate.Though the removal speed of having relatively high expectations usually, it preferably is not too high removing speed, and the control that causes damaging surface smoothness and/or wafer surface form or making the graduation process becomes difficulty.
Further specify the present invention by following non-limiting example.
Embodiment 1
Present embodiment shows that the sulfonated amphiprotic ion can promote from the effect of semiconductor wafer supernatant copper removal.The slurry PL-7102 polish copper wafer that use is buied from Fujimi.With the wafer pressure of 3 pounds/square inch (or 20684 handkerchiefs), make wafer rotate wafer with 80 rev/mins speed (or the pad of 0.62 meter per second-wafer relative velocity).Polishing pad is Rodel IC-1000 XY-Groove.The flow rate of slurry of pad center is 80 ml/min.Obtain the following speed (is unit with the nm/min) of removing:
| Slurry | Remove speed (nm/min) |
| Blank (additive-free) | 363.5 |
| Piperazine-the N of+15 grams per liters, N '-two (2-ethanesulfonic acid) | 440.5 |
| The N-of+15 grams per liters (2-ethoxy) piperazine-N '-(2-ethanesulfonic acid) | 534.0 |
| The 3-[N-morpholino of+50 grams per liters]) propane sulfonic acid | 567.6 |
| The 2-of+50 grams per liters (N-morpholino) ethyl sulfonic acid | 541.3 |
| The N of+50 grams per liters, two (2-the ethoxy)-2-tarines of N- | 520.9 |
Because the reason of sulfonated amphiprotic ion, copper is removed speed and is increased.
Embodiment 2
Present embodiment shows that the sulfonated amphiprotic ion keeps the effect of pH during being exposed to oxidizing solution.
Pure copper foil is cut into about 4 centimetres of coupons of taking advantage of 4 centimetres.The negative electrode that under 60 ℃ and 4.0 laid shoot spares copper was carried out 30 seconds in the solution that contains 50 grams per liter NaOH cleans.In distilled water, wash Copper Foil then, in 5% sulfuric acid, soaked 5 seconds subsequently.Use distilled water flushing copper once more.
Prepare composition according to following table.Only contain 2% hydrogen peroxide in " blank " solution, pH is adjusted to 6.00.Multiple sulfonated amphiprotic ion is tested it kept pH in 5 hours ability.
| Composition | Initial pH | 5 hours pH@ (Δ pH-5 hour) | Voltage (to SCE) | The Copper Foil outward appearance |
| Blank (2%H 2O 2) | 6.00 | 5.62(-0.38) | +0.3350 | Glossy |
| The 2-of+25 grams per liters (N-morpholino) ethyl sulfonic acid, sodium salt | 6.03 | 5.98(-0.05) | +0.3150 | Matt |
| The 2-of+50 grams per liters (N-morpholino) ethyl sulfonic acid, sodium salt | 6.04 | 5.98(-0.06) | +0.3100 | Matt |
| The 2-of+25 grams per liters (N-morpholino) ethyl sulfonic acid | 6.04 | 6.01(-0.03) | +0.3100 | Matt |
| The 2-of+50 grams per liters (N-morpholino) ethyl sulfonic acid | 6.03 | 5.99(-0.04) | +0.3100 | Matt |
| The N-of+50 grams per liters (2-ethoxy) piperazine-N '-(2-ethyl sulfonic acid) | 6.01 | 5.94(-0.05) | +0.3550 | Matt |
| Piperazine-the N of+50 grams per liters, N '-two (2-ethanesulfonic acid) | 6.01 | 5.86(-0.15) | +0.3300 | Matt |
| The 3-[N-of+50 grams per liters (morpholino)] interior sulfonic acid | 6.01 | 5.93(-0.08) | +0.3150 | Matt |
Find only to contain H
2O
2Solution cause pH to be changed to-0.38, and contain the sulfonated amphiprotic ion solution pH is kept near original value.
Embodiment 3
Present embodiment has contrasted described in the document and buffer of the present invention.
Described in embodiment 2, clean Copper Foil.The Copper Foil of cleaning is immersed in the following solution 24 hours, the variation of record pH, the outward appearance of Copper Foil weight and copper.
| Composition | Initial pH | Initial Cu weight (gram) | Final pH (Δ pH-24 hour) | Final Cu weight (% weight change) | The Copper Foil outward appearance |
| Blank (2%H 2O 2) | 6.01 | 0.1697 | 4.17(-1.84) | 0.1669 (-1.6％) | Slight loss of gloss pool |
| The potassium citrate of+50 grams per liters | 6.00 | 0.1722 | 6.45(+0.45) | Dissolving | Dissolving |
| The potassium phosphate of+50 grams per liters | 6.01 | 0.1949 | 6.04(+0.03) | 0.1975 (+1.3％) | The last green coating of Cu |
| The 3-[N-morpholino of+50 grams per liters]) propane sulfonic acid | 6.01 | 0.2116 | 5.18(-0.83) | 0.2111 (-0.24％) | Serious loss of gloss pool |
| The 2-of+50 grams per liters (N-morpholino) ethyl sulfonic acid | 6.00 | 0.1771 | 5.79(-0.21) | 0.1784 (+0.73％) | Serious loss of gloss pool |
| The glycine of+30 grams per liters | 5.99 | 0.2237 | 6.21(+0.22) | Dissolving | Dissolving |
" blank " composition showed tangible pH drift after 24 hours.The dim slightly expression of copper luster has oxidation to a certain degree.Contain citrate and can keep pH, but citrate has dissolved Copper Foil fully to the very strong complexing of copper, shown that this buffer has aggressivity as buffer/combination of chelating agents thing.The composition that contains the main buffer of phosphate conduct also can keep pH, but can form the bottle green film on the copper surface, and this is disadvantageous in the CMP application.PH when the composition that contains sulfonated amphiprotic ionic species buffer more can make pH near beginning than " blank " solution forms the oxide that requires or the film in intensely dark pool, can not corrode dissolved copper sample alive simultaneously again.
Embodiment 4
Present embodiment shows use OXONE (2KHSO
5KHSO
4K
2SO
4) as the purposes of oxidant and the effect of zwitterionic classes buffer.
According to the cleaning of method described in the embodiment 2 Copper Foil.To clean copper sample and be immersed in the following composition 24 hours, the variation of record pH, the variation of copper outward appearance and solution colour.
| Composition | Initial pH | Initial Cu weight | Δ pH, 5 hours | Outward appearance after 5 hours | Solution colour after 5 hours |
| OXONE (20 grams per liter) | 6.00 | 0.2010 | 3.94(-2.06) | Have a stain | Light blue → green/pH increases |
| Piperazine-the N of+50 grams per liters, N '-two (2-ethyl sulfonic acid) | 6.01 | 0.1972 | 5.46(-0.55) | Oxidized (passivation) surface | Transparent |
| Hydroxyethyl piperazine-the N ' of+50 grams per liters-(2-ethyl sulfonic acid) | 6.02 | 0.2537 | 5.71(-0.32) | Oxidized (passivation) surface | Transparent |
| + 25 grams per liter 2-(N-morpholino) ethyl sulfonic acid | 6.00 | 0.2008 | 5.75(-0.25) | Oxidized (passivation) surface | Amber |
| The N of+50 grams per liters, two (2-the ethoxy)-2-tarines of N- | 6.01 | 0.2103 | 5.63(-0.38) | The dark-brown surface | Transparent |
The variation that only contains pH in the composition of OXONE is about-2.06 units, changes and contain the pH that the compositions table of sulfonated amphiprotic ionic buffer reveals less than-1.0.Be dipped on the Copper Foil that only contains in the OXONE solution and have a stain, and by etching unevenly.Be dipped into the evenly oxidation of copper foil surface quilt in the OXONE solution that contains the sulfonated amphiprotic ion.
Embodiment 5
Present embodiment shows that azanol is as the purposes of oxidant and the effect of sulfonated amphiprotic ionic buffer.
Described in embodiment 2, clean Copper Foil.To clean Copper Foil and immerse in the following composition 5 hours, write down the variation of pH and the variation of solution colour.
| Composition | Initial pH | Final pH (Δ pH-5 hour) | Solution colour after 5 hours |
| Blank (the NH of 0.50 mol 2OH) | 6.01 | 5.64(-0.41) | Transparent |
| Piperazine-the N of+50 grams per liters, N '-two (2-ethanesulfonic acid) | 5.99 | 5.96(-0.03) | Very shallow purple |
| The ethoxy of+50 grams per liters) piperazine-N '-(2-ethanesulfonic acid) | 6.00 | 5.95(-0.05) | Light blue/purple |
| The 3-[N-morpholino of+50 grams per liters]) interior sulfonic acid | 6.02 | 5.96(-0.06) | Light blue/purple |
| The 2-of+50 grams per liters (N-morpholino) ethyl sulfonic acid | 5.98 | 6.01(+0.03) | Very shallow blueness |
| The glycine of+30 grams per liters | 6.01 | 5.99(-0.02) | Navy blue |
| The N of+50 grams per liters, two (2-the ethoxy)-2-tarines of N- | 6.01 | 5.92(-0.09) | Very shallow blueness |
The compositions table that only contains azanol reveals approximately-0.46 that the pH of unit changes, and changes and contain the pH that the compositions table of sulfonated amphiprotic ionic buffer reveals less than-0.10.The composition that only contains azanol is transparent, shows that the copper dissolution amount is very little or with in the cuprous ion form dissolves into solution.The azanol composition that contains glycine is navy blue, shows that copper dissolves with the copper ion form rapidly.The azanol composition that contains the sulfonated amphiprotic ion is light, shows complexing copper ion dissolving (what reveal color is the chromophore of copper-amphion complex compound) afterwards.
Embodiment 6
Present embodiment shows purposes and sulfonated amphiprotic ionic buffer the effect Long contact time copper after of azanol as oxidant.
Described in embodiment 2, clean Copper Foil.Copper sample be will clean and the variation of record pH, the variation of weight of copper afterwards of contact electrolyte, and the variation of solution colour immersed in the following composition 5 hours.
| Composition | Initial pH | Initial Cu weight (gram) | Final pH (Δ pH-24 hours) | Final Cu weight (% weight change) | Solution colour during off-test |
| Blank (0.50 mol NH 2OH) | 6.01 | 0.2150 | 4.83 (-1.18) | 0.2026 (-5.76％) | Light blue |
| The potassium citrate of+50 grams per liters | 6.01 | 0.2204 | 6.17 (+0.16) | 0.0128 (-94.1％) | Light blue |
| The potassium phosphate of+50 grams per liters | 6.00 | 0.2541 | 5.85 (-0.15) | 0.2448 (-3.7％) | Light blue |
| Piperazine-the N of+50 grams per liters, N '-two (2-ethyl sulfonic acid) | 5.99 | 0.2108 | 5.54 (-0.45) | 0.1760 (-16.5％) | Light blue |
| The ethoxy of+50 grams per liters) piperazine-N '-(2-ethanesulfonic acid) | 6.00 | 0.1851 | 5.31 (-0.69) | 0.1458 (-21.2％) | Light blue |
| The 2-of+50 grams per liters (N-morpholino) ethyl sulfonic acid | 5.98 | 0.1981 | 5.69 (-0.29) | 0.1524 (-36.2％) | Green |
| The glycine of+30 grams per liters | 6.01 | 0.2082 | 5.89 (-0.12) | Dissolving | Light blue |
| The N of+50 grams per liters, two (2-the ethoxy)-2-tarines of N- | 6.01 | 0.2430 | 5.62 (-0.39) | 0.1960 (-19.3％) | Navy blue |
" blank " compositions table that only contains azanol reveals the pH variation of-1.18 units, and loss in weight is medium, approximately is 5.67%.Use citrate and glycine can keep the pH of solution, but can corrode Copper Foil, cause the excessive dissolving of copper.Similarly, use PB can keep in test pH, unwanted but copper foil surface has covered, green cupric phosphate coating, intractable in the CMP process.Use sulfonated amphiprotic ionic buffer to show medium copper dissolution amount, but it keep the ability of pH to be better than not containing the situation of cushioning liquid.The color of sulfonated amphiprotic ion cushioning liquid shows that these buffers produce copper complexing to a certain degree.
Claims (32)
1. one kind is used for the smooth slurry that is suitable for making the wafer surface of semiconductor device, and this slurry comprises:
A. sulfonated amphiprotic ion,
B. oxidant,
C. liquid carrier,
D. Ren Xuan inorganic polishing particles,
E. Ren Xuan chelating agent,
F. Ren Xuan secondary buffer,
G. Ren Xuan passivator,
H. Ren Xuan surfactant, viscous regulator, wetting agent, lubricant or soap and
I. Ren Xuan inhibitor.
2. slurry as claimed in claim 1 is characterized in that sulfonated amphiprotic ion reagent has following structure:
R
1R
2-N-(CR
3R
4)
xSO
3M
R wherein
1And R
2Be alkyl, hydroxyl, hydrogen, heteroatomic ring, aromatic ring or cycloalkyl structure, R
3And R
4Be halogen, alkyl, hydroxyl, hydrogen, heteroatomic ring, aromatic ring or cycloalkyl structure, x is 2 to 4, and M is hydrogen, alkali metal or alkaline-earth metal, amine or ammonium ion.
3. slurry as claimed in claim 1, it is characterized in that the sulfonated amphiprotic ion is selected from: 2-(N-morpholino) ethyl sulfonic acid, 2-[(2-amino-2-oxygen ethyl) amino] ethyl sulfonic acid, piperazine-N, N '-two (2-ethanesulfonic acid), 3-(N-morpholino)-2-hydroxy-propanesulfonic acid, N, two (2-the ethoxy)-2-tarines of N-, 3-(N-morpholino) propane sulfonic acid, N-(2-ethoxy) piperazine-N '-(2-ethanesulfonic acid), N-three (methylol) methyl-2-tarine, 3-[N, two (2-ethoxy) amino of N-]-the 2-hydroxy-propanesulfonic acid, 3-[N-three (methylol) methylamino]-the 2-hydroxy-propanesulfonic acid, N-(2-ethoxy) piperazine-N '-(2-hydroxy-propanesulfonic acid), piperazine-N, N '-two (2-hydroxy-propanesulfonic acid), N-(2-ethoxy) piperazine-N '-(3-N-morpholinopropanesulfonic acid), N-three (methylol) methyl-3-aminopropanesulfonicacid acid, 3-[(1,1-dimethyl-1, the 2-ethoxy) amino]-the 2-hydroxy-propanesulfonic acid, 2-(N-cyclohexyl amino) ethyl sulfonic acid, 3-(cyclohexyl amino)-2-hydroxyl-1-propane sulfonic acid, 3-(cyclohexyl amino)-1-propane sulfonic acid or their mixture.
4. slurry as claimed in claim 1, the concentration that it is characterized in that the sulfonated amphiprotic ion are 0.1 to 100 grams per liters.
5. slurry as claimed in claim 1 is characterized in that pH changes to 11 from 2.
6. slurry as claimed in claim 1, it is characterized in that oxidant is selected from hydrogen peroxide, dichloride copper, ammonium persulfate, sodium peroxydisulfate and potassium peroxydisulfate, ferric trichloride, the potassium ferricyanide, nitric acid, potassium nitrate, ammonium molybdate, Potassiumiodate, azanol, diethyl hydroxylamine, OXONE, ferricyanide, EDTA ammonium iron, ammonium citrate iron, ironic citrate and ammonium oxalate iron, urea-hydrogen peroxide, sodium peroxide, benzyl peroxide, two-tert-butyl peroxide, peracetic acid, single persulfuric acid, two persulfuric acid, acid iodide and salt thereof, and their mixture.
7. slurry as claimed in claim 1, the concentration that it is characterized in that oxidant is in 0.5 to 15% scope.
8. slurry as claimed in claim 1 is characterized in that it contains inorganic polishing particles.
9. slurry as claimed in claim 8 is characterized in that inorganic polishing particles is selected from SiO
2, Al
2O
3, CeO
2, zirconia, calcium carbonate, garnet, silicate or titanium dioxide.
10. slurry as claimed in claim 1 is characterized in that not using in the slurry inorganic polishing particles.
11. slurry as claimed in claim 1 is characterized in that secondary buffer is 0.1 to 100 grams per liter.
12. slurry as claimed in claim 1 is characterized in that secondary buffer is one, two or the ammonium salt of polyacid, and is single, two or tricarboxylic alkali metal or alkali salt, phosphonic acids, or nitrogenous amphion or their mixture.
13. slurry as claimed in claim 12 is characterized in that described nitrogenous amphion is an amino acid.
14. slurry as claimed in claim 1, it contains passivator, it is characterized in that passivator is tolyl-triazole, mercaptobenzothiazoler or BTA.
15. slurry as claimed in claim 14, the concentration that it is characterized in that passivator is in 0.025 to 0.20% scope.
16. slurry as claimed in claim 1 is characterized in that having used surfactant, viscous regulator, wetting agent, lubricant or soap.
17. slurry as claimed in claim 1 is characterized in that temperature is 10 ℃ to 70 ℃.
18. slurry as claimed in claim 1 is characterized in that at least a inhibitor has at least 5: 1 polishing selectivity to the first metal layer and second metal level, inhibitor wherein is the charged nitrogen-containing compound of cationic.
19. slurry as claimed in claim 1 is characterized in that liquid carrier is water-free solvent.
20. slurry as claimed in claim 1 is characterized in that liquid carrier is a water.
21. slurry as claimed in claim 2 is characterized in that the sulfonated amphiprotic ion is with ammonium salt or sylvite or the introducing of its form of mixtures.
22. slurry as claimed in claim 1 is characterized in that sheltering the metal that grinds with chelating agent.
23. slurry as claimed in claim 1 is characterized in that chelating agent is selected from the salt of following material: citric acid, iminodiacetic acid, the 2-ciliatine, amino three (methylene phosphonic acid) 1-hydroxy ethylene-1,1-two-phosphonic acids, diethylidene HN-3 five (methylene phosphonic acid) and glycine.
24. slurry as claimed in claim 1, it is characterized in that wetting agent be cationic, anionic property, nonionic, both sexes, fluoridize or their mixture.
25. an improvement is suitable for making the method for the wafer surface of semiconductor device, it may further comprise the steps:
A., the wafer that comprises first kind of material and second kind of material is provided, and first kind of material has the surface that is etched into pattern, and second kind of material is deposited on the surface of first kind of material;
B. under the described working slurry existence condition of claim 1, make second kind of material contact polishing pad of wafer; With
C. when second kind of material contact polishing pad, relatively mobile wafer or polishing pad flatten up to the exposing surface of wafer, and comprise the zone of first kind of material that at least one exposes and the zone of second kind of material that is exposed.
26. method as claimed in claim 25 is characterized in that containing in the slurry inorganic polishing particles.
27. method as claimed in claim 25 is characterized in that inorganic polishing particles is fixed on the polishing pad.
28. method as claimed in claim 25 is characterized in that not using inorganic polishing particles.
29. method as claimed in claim 25 is characterized in that polishing pad comprises polymer pad, is applied with slurry on the polymer pad, comprises the loose abrasive grains that is dispersed in a large number wherein in this slurry, slurry is the metal level of contact wafer by using polishing pad.
30. method as claimed in claim 25 is characterized in that first kind of material is dielectric material, second kind of material is conductive of material.
31. method as claimed in claim 25 is characterized in that further comprising in the wafer barrier layer that covers dielectric material.
32. method as claimed in claim 30 is characterized in that conductive of material is a conductive metal, is selected from: titanium, silver, aluminium, tungsten, tantalum, tantalum nitride, tungsten nitride, tantalum oxide, tungsten oxide, silica, copper or its alloy.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US42569002P | 2002-11-12 | 2002-11-12 | |
| US60/425,690 | 2002-11-12 | ||
| US10/685,730 | 2003-10-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1720313A CN1720313A (en) | 2006-01-11 |
| CN1333444C true CN1333444C (en) | 2007-08-22 |
Family
ID=35931716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003801052037A Expired - Fee Related CN1333444C (en) | 2002-11-12 | 2003-10-29 | Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1333444C (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7097541B2 (en) * | 2002-01-22 | 2006-08-29 | Cabot Microelectronics Corporation | CMP method for noble metals |
| ES2533349T3 (en) | 2006-09-19 | 2015-04-09 | Poligrat Gmbh | Stabilizer for acid polishing baths containing metal |
| CN101665662A (en) * | 2008-09-05 | 2010-03-10 | 安集微电子科技(上海)有限公司 | Chemical mechanical polishing solution |
| CN101901782B (en) * | 2010-07-21 | 2011-12-14 | 河北工业大学 | Oxidation protection method of multilayer wiring of ultra large scale integrated circuit after alkaline polishing |
| JP6135999B2 (en) * | 2012-04-10 | 2017-05-31 | 三菱瓦斯化学株式会社 | Liquid composition used for etching multilayer film containing copper and molybdenum, and etching method using the same |
| US9597768B1 (en) * | 2015-09-09 | 2017-03-21 | Cabot Microelectronics Corporation | Selective nitride slurries with improved stability and improved polishing characteristics |
| JP6788988B2 (en) * | 2016-03-31 | 2020-11-25 | 株式会社フジミインコーポレーテッド | Polishing composition |
| CN107267993B (en) * | 2017-05-25 | 2020-06-23 | 广西大学 | Hydrogen peroxide system polishing solution and method for polishing THGEM film in hydrogen peroxide system polishing solution |
| US10465096B2 (en) * | 2017-08-24 | 2019-11-05 | Versum Materials Us, Llc | Metal chemical mechanical planarization (CMP) composition and methods therefore |
| JP7088797B2 (en) * | 2018-09-25 | 2022-06-21 | 株式会社フジミインコーポレーテッド | Tungsten dissolution inhibitor, and polishing composition and surface treatment composition using it. |
| CN110064973A (en) * | 2019-03-21 | 2019-07-30 | 林德谊 | A kind of surface polishing process of copper or copper alloy |
| CN110757329A (en) * | 2019-10-18 | 2020-02-07 | 林德谊 | Metal surface polishing treatment process |
| KR20220088115A (en) * | 2020-12-18 | 2022-06-27 | 주식회사 케이씨텍 | Polishing slurry composition |
| CN117229716A (en) * | 2023-08-23 | 2023-12-15 | 上海集成电路材料研究院有限公司 | Application of morpholine-ring-containing water-soluble small molecules and chemical mechanical polishing solution |
| CN117229717A (en) * | 2023-08-23 | 2023-12-15 | 上海集成电路材料研究院有限公司 | Chemical mechanical polishing solution and preparation method and application thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001007060A (en) * | 1999-06-18 | 2001-01-12 | Hitachi Chem Co Ltd | Cmp-polishing agent and method for polishing substrate |
| US6238272B1 (en) * | 1998-09-04 | 2001-05-29 | Speedfam-Ipec Co Ltd | Polishing compound and a polishing method for silicon wafer |
| US6300249B1 (en) * | 1998-04-24 | 2001-10-09 | Speedfam Co Ltd | Polishing compound and a method for polishing |
| US6299659B1 (en) * | 1998-08-05 | 2001-10-09 | Showa Denko K.K. | Polishing material composition and polishing method for polishing LSI devices |
| JP2002025953A (en) * | 2000-06-30 | 2002-01-25 | Jsr Corp | Aqueous dispersion for chemical mechanical polishing |
| CN1337983A (en) * | 1999-03-10 | 2002-02-27 | 3M创新有限公司 | Working liquids and methods for modifying structured wafers for semiconductor fabrication |
| US6447563B1 (en) * | 1998-10-23 | 2002-09-10 | Arch Specialty Chemicals, Inc. | Chemical mechanical polishing slurry system having an activator solution |
-
2003
- 2003-10-29 CN CNB2003801052037A patent/CN1333444C/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6300249B1 (en) * | 1998-04-24 | 2001-10-09 | Speedfam Co Ltd | Polishing compound and a method for polishing |
| US6299659B1 (en) * | 1998-08-05 | 2001-10-09 | Showa Denko K.K. | Polishing material composition and polishing method for polishing LSI devices |
| US6238272B1 (en) * | 1998-09-04 | 2001-05-29 | Speedfam-Ipec Co Ltd | Polishing compound and a polishing method for silicon wafer |
| US6447563B1 (en) * | 1998-10-23 | 2002-09-10 | Arch Specialty Chemicals, Inc. | Chemical mechanical polishing slurry system having an activator solution |
| CN1337983A (en) * | 1999-03-10 | 2002-02-27 | 3M创新有限公司 | Working liquids and methods for modifying structured wafers for semiconductor fabrication |
| JP2001007060A (en) * | 1999-06-18 | 2001-01-12 | Hitachi Chem Co Ltd | Cmp-polishing agent and method for polishing substrate |
| JP2002025953A (en) * | 2000-06-30 | 2002-01-25 | Jsr Corp | Aqueous dispersion for chemical mechanical polishing |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1720313A (en) | 2006-01-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7297669B2 (en) | Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents | |
| CN1333444C (en) | Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents | |
| CN101356628B (en) | High throughput chemical mechanical polishing composition for metal film planarization | |
| CN100412153C (en) | Process for reducing dishing and erosion during chemical mechanical planarization | |
| KR100946421B1 (en) | Polishing slurries and chemical mechanical polishing methods | |
| CN100569882C (en) | Slurry and method for chemical mechanical planarization of copper | |
| JP3892846B2 (en) | CMP slurry, polishing method, and semiconductor device manufacturing method | |
| JP5539934B2 (en) | Chemical mechanical polishing slurry useful for copper substrate | |
| US6911393B2 (en) | Composition and method for copper chemical mechanical planarization | |
| US20070093182A1 (en) | Polishing fluids and methods for CMP | |
| CN104745084B (en) | A kind of chemical mechanical polishing liquid and application method for aluminium | |
| TWI294456B (en) | ||
| US20100059390A1 (en) | METHOD AND APARATUS FOR ELECTROCHEMICAL MECHANICAL POLISHING NiP SUBSTRATES | |
| JP7391595B2 (en) | Chemical mechanical polishing composition and method for tungsten | |
| WO2008072207A1 (en) | Improved electrolyte formulation for electrochemical mechanical planarization | |
| WO2022107217A1 (en) | Polishing agent, multi-liquid polishing agent, and polishing method | |
| KR20060118396A (en) | Slurry and Method for Chemical-Mechanical Planarization of Copper | |
| Zhang et al. | Exploration on functional groups of complexing agents during chemical mechanical polishing for Co interconnects | |
| KR20250079127A (en) | Compositions and methods for performing material removal operations | |
| KR20250060705A (en) | Chemical mechanical polishing slurry composition for polishing metal films and polishing method using the same | |
| CN1720353A (en) | Composition and method for copper chemical mechanical planarization | |
| WO2010017092A1 (en) | Composition and method for copper chemical mechanical planarization |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070822 Termination date: 20121029 |