CN1324164C - Copper or copper alloy corrodent and corrosion method - Google Patents
Copper or copper alloy corrodent and corrosion method Download PDFInfo
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- CN1324164C CN1324164C CNB021222509A CN02122250A CN1324164C CN 1324164 C CN1324164 C CN 1324164C CN B021222509 A CNB021222509 A CN B021222509A CN 02122250 A CN02122250 A CN 02122250A CN 1324164 C CN1324164 C CN 1324164C
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 239000010949 copper Substances 0.000 title claims abstract description 44
- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 9
- 238000000034 method Methods 0.000 title claims description 11
- 238000005260 corrosion Methods 0.000 title claims description 8
- 230000007797 corrosion Effects 0.000 title claims description 8
- 229910052802 copper Inorganic materials 0.000 claims abstract description 43
- 239000007800 oxidant agent Substances 0.000 claims abstract description 15
- 150000003863 ammonium salts Chemical class 0.000 claims abstract description 10
- -1 azole compound Chemical class 0.000 claims abstract description 10
- 239000007864 aqueous solution Substances 0.000 claims abstract description 9
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000003795 chemical substances by application Substances 0.000 claims abstract 2
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 claims description 10
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 9
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 9
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 claims description 8
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 7
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 claims description 7
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 4
- 229910001919 chlorite Inorganic materials 0.000 claims description 4
- 229910052619 chlorite group Inorganic materials 0.000 claims description 4
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 3
- LJDSTRZHPWMDPG-UHFFFAOYSA-N 2-(butylamino)ethanol Chemical compound CCCCNCCO LJDSTRZHPWMDPG-UHFFFAOYSA-N 0.000 claims description 3
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 claims description 3
- GVNHOISKXMSMPX-UHFFFAOYSA-N 2-[butyl(2-hydroxyethyl)amino]ethanol Chemical compound CCCCN(CCO)CCO GVNHOISKXMSMPX-UHFFFAOYSA-N 0.000 claims description 3
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 claims description 3
- WFCSWCVEJLETKA-UHFFFAOYSA-N 2-piperazin-1-ylethanol Chemical compound OCCN1CCNCC1 WFCSWCVEJLETKA-UHFFFAOYSA-N 0.000 claims description 3
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 claims description 3
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 3
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 claims description 3
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 claims description 3
- 229940005991 chloric acid Drugs 0.000 claims description 3
- 229940077239 chlorous acid Drugs 0.000 claims description 3
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 claims description 3
- 229940102253 isopropanolamine Drugs 0.000 claims description 3
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 8
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 9
- 238000007747 plating Methods 0.000 description 8
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 7
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 7
- 235000011130 ammonium sulphate Nutrition 0.000 description 7
- 239000005708 Sodium hypochlorite Substances 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000009499 grossing Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 235000019270 ammonium chloride Nutrition 0.000 description 3
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 3
- 159000000000 sodium salts Chemical class 0.000 description 3
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 3
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 description 2
- BZSXEZOLBIJVQK-UHFFFAOYSA-N 2-methylsulfonylbenzoic acid Chemical compound CS(=O)(=O)C1=CC=CC=C1C(O)=O BZSXEZOLBIJVQK-UHFFFAOYSA-N 0.000 description 2
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 2
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 2
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 description 2
- 239000005696 Diammonium phosphate Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 description 2
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 description 2
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 2
- ZRIUUUJAJJNDSS-UHFFFAOYSA-N ammonium phosphates Chemical compound [NH4+].[NH4+].[NH4+].[O-]P([O-])([O-])=O ZRIUUUJAJJNDSS-UHFFFAOYSA-N 0.000 description 2
- 150000003851 azoles Chemical class 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 2
- 229910000388 diammonium phosphate Inorganic materials 0.000 description 2
- 235000019838 diammonium phosphate Nutrition 0.000 description 2
- 150000002443 hydroxylamines Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 235000019837 monoammonium phosphate Nutrition 0.000 description 2
- 239000006012 monoammonium phosphate Substances 0.000 description 2
- 150000003536 tetrazoles Chemical class 0.000 description 2
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 1
- OSSNTDFYBPYIEC-UHFFFAOYSA-N 1-ethenylimidazole Chemical compound C=CN1C=CN=C1 OSSNTDFYBPYIEC-UHFFFAOYSA-N 0.000 description 1
- OMAFFHIGWTVZOH-UHFFFAOYSA-N 1-methyltetrazole Chemical group CN1C=NN=N1 OMAFFHIGWTVZOH-UHFFFAOYSA-N 0.000 description 1
- IYPXPGSELZFFMI-UHFFFAOYSA-N 1-phenyltetrazole Chemical compound C1=NN=NN1C1=CC=CC=C1 IYPXPGSELZFFMI-UHFFFAOYSA-N 0.000 description 1
- KJUGUADJHNHALS-UHFFFAOYSA-N 1H-tetrazole Substances C=1N=NNN=1 KJUGUADJHNHALS-UHFFFAOYSA-N 0.000 description 1
- BMLOBNVUJHKONU-UHFFFAOYSA-N 2-(2-phenylethyl)-1h-benzimidazole Chemical compound N=1C2=CC=CC=C2NC=1CCC1=CC=CC=C1 BMLOBNVUJHKONU-UHFFFAOYSA-N 0.000 description 1
- HITWHALOZBMLHY-UHFFFAOYSA-N 2-Butyl-1H-benzimidazole Chemical compound C1=CC=C2NC(CCCC)=NC2=C1 HITWHALOZBMLHY-UHFFFAOYSA-N 0.000 description 1
- JWYUFVNJZUSCSM-UHFFFAOYSA-N 2-aminobenzimidazole Chemical compound C1=CC=C2NC(N)=NC2=C1 JWYUFVNJZUSCSM-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- KFJDQPJLANOOOB-UHFFFAOYSA-N 2h-benzotriazole-4-carboxylic acid Chemical compound OC(=O)C1=CC=CC2=NNN=C12 KFJDQPJLANOOOB-UHFFFAOYSA-N 0.000 description 1
- FLDCSPABIQBYKP-UHFFFAOYSA-N 5-chloro-1,2-dimethylbenzimidazole Chemical compound ClC1=CC=C2N(C)C(C)=NC2=C1 FLDCSPABIQBYKP-UHFFFAOYSA-N 0.000 description 1
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2h-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 description 1
- 239000001741 Ammonium adipate Substances 0.000 description 1
- 239000004251 Ammonium lactate Substances 0.000 description 1
- GEHMBYLTCISYNY-UHFFFAOYSA-N Ammonium sulfamate Chemical compound [NH4+].NS([O-])(=O)=O GEHMBYLTCISYNY-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 235000019293 ammonium adipate Nutrition 0.000 description 1
- 229940059265 ammonium lactate Drugs 0.000 description 1
- 235000019286 ammonium lactate Nutrition 0.000 description 1
- VBIXEXWLHSRNKB-UHFFFAOYSA-N ammonium oxalate Chemical compound [NH4+].[NH4+].[O-]C(=O)C([O-])=O VBIXEXWLHSRNKB-UHFFFAOYSA-N 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- RZOBLYBZQXQGFY-HSHFZTNMSA-N azanium;(2r)-2-hydroxypropanoate Chemical compound [NH4+].C[C@@H](O)C([O-])=O RZOBLYBZQXQGFY-HSHFZTNMSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- YXVFQADLFFNVDS-UHFFFAOYSA-N diammonium citrate Chemical compound [NH4+].[NH4+].[O-]C(=O)CC(O)(C(=O)O)CC([O-])=O YXVFQADLFFNVDS-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Abstract
Description
技术领域technical field
本发明涉及可将铜或铜合金(以下简单称为‘铜’)的表面腐蚀为平滑的腐蚀剂和腐蚀方法。The present invention relates to an etchant and an etching method capable of corroding the surface of copper or copper alloy (hereinafter simply referred to as 'copper') to be smooth.
背景技术Background technique
作为可形成平滑的铜表面的腐蚀剂,例如,在特公平58-21028号公报中公开了含有草酸盐、过氧化氢、胺类和苯并三唑的酸性水溶液。并且,在美国专利第5630950号明细书中公开了含有硫酸、过氧化氢和过氧化氢稳定剂的酸性水溶液。As an etchant capable of forming a smooth copper surface, for example, JP-A-58-21028 discloses an acidic aqueous solution containing oxalate, hydrogen peroxide, amines, and benzotriazole. Furthermore, US Pat. No. 5,630,950 specification discloses an acidic aqueous solution containing sulfuric acid, hydrogen peroxide, and a hydrogen peroxide stabilizer.
然而,对于特公开58-21028号公报的腐蚀剂来说,存在必须在50℃的高温下进行处理、并容易析出难溶性的铜配位化合物等的问题。另外,对于美国专利第5630950号的腐蚀剂来说,存在必须在狭窄的范围控制硫酸浓度或过氧化氢浓度,并由于过氧化氢浓度过高时容易产生突然沸腾等的问题。However, the etchant disclosed in Japanese Patent Laid-Open No. 58-21028 has problems in that it must be treated at a high temperature of 50° C., and insoluble copper complexes tend to precipitate. In addition, the etchant disclosed in US Pat. No. 5,630,950 has problems such as the need to control the concentration of sulfuric acid or hydrogen peroxide within a narrow range, and sudden boiling is likely to occur when the concentration of hydrogen peroxide is too high.
发明内容Contents of the invention
因此,为了解决现有技术的缺点,本发明的目的在于提供一种在温和的条件下使铜表面平滑的腐蚀剂和使上述表面平滑的腐蚀方法。Therefore, in order to solve the disadvantages of the prior art, it is an object of the present invention to provide an etchant for smoothing copper surfaces and an etching method for smoothing the above-mentioned surfaces under mild conditions.
为了解决上述问题,本发明人经过反复深入的研究,结果发现:如果使铜表面与含有羟胺、氧化剂、铵盐和唑化合物的水溶液接触,就可以使铜表面平滑。In order to solve the above-mentioned problems, the present inventors have repeatedly studied and found that if the copper surface is brought into contact with an aqueous solution containing hydroxylamine, an oxidizing agent, an ammonium salt and an azole compound, the copper surface can be smoothed.
即,本发明由下述的组成来完成。That is, the present invention is accomplished by the following constitutions.
(1)由含有羟胺、氧化剂、铵盐和唑化合物的水溶液构成铜或铜合金的腐蚀剂。(1) An etchant for copper or copper alloys composed of an aqueous solution containing hydroxylamine, an oxidizing agent, an ammonium salt, and an azole compound.
(2)使含有羟胺、氧化剂、铵盐和唑化合物的水溶液与铜或铜合金的表面接触、而使上述表面平滑的腐蚀方法。(2) An etching method in which an aqueous solution containing hydroxylamine, an oxidizing agent, an ammonium salt, and an azole compound is brought into contact with the surface of copper or copper alloy to smooth the surface.
具体实施方式Detailed ways
下面,详细说明本发明。Next, the present invention will be described in detail.
本发明中所使用的羟胺是使溶液保持碱性、抑制氧化剂分解、并在溶液中保持铜的成分,作为其具体例来说,例如可列举出:一乙醇胺、N-甲基乙醇胺、N-乙基乙醇胺、N-丁基乙醇胺、N,N-二甲基乙醇胺、N,N-二乙基乙醇胺、2-(2-羟基)乙氧基乙醇胺等的一乙醇胺类、二乙醇胺、N-甲基二乙醇胺、N-丁基二乙醇胺等的二乙醇胺类、三乙醇胺、丙醇胺、异丙醇胺、羟乙基哌嗪等的烷醇胺类、或氨水溶液。The hydroxylamine used in the present invention keeps the solution alkaline, suppresses the decomposition of the oxidant, and keeps copper in the solution. Specific examples thereof include monoethanolamine, N-methylethanolamine, N- Monoethanolamines such as ethylethanolamine, N-butylethanolamine, N,N-dimethylethanolamine, N,N-diethylethanolamine, 2-(2-hydroxy)ethoxyethanolamine, diethanolamine, N- Diethanolamines such as methyldiethanolamine and N-butyldiethanolamine, alkanolamines such as triethanolamine, propanolamine, isopropanolamine, and hydroxyethylpiperazine, or an aqueous ammonia solution.
在上述羟胺之中,从保持铜的能力高、且容易取得、价格便宜这点上来看,优选一乙醇胺、二乙醇胺、三乙醇胺等的碳原子数在8以下的烷醇胺或氨水溶液等。上述羟胺也可以2种以上合用。Among the above-mentioned hydroxylamines, alkanolamines having 8 or less carbon atoms such as monoethanolamine, diethanolamine, and triethanolamine, or aqueous ammonia solutions are preferable in terms of high ability to retain copper, easy availability, and low cost. The above-mentioned hydroxylamines may be used in combination of two or more.
腐蚀剂中的羟胺的浓度优选为1-40%(重量%,以下相同),更优选为5-30%。The concentration of hydroxylamine in the etchant is preferably 1-40% (weight%, the same applies hereinafter), more preferably 5-30%.
在上述浓度为1-40%的情况下,腐蚀液可溶解的铜的量较多,并且氧化剂难以分解,而且从成本方面来看也较好。In the case of the above-mentioned concentration of 1-40%, the amount of copper that can be dissolved in the etching solution is large, and the oxidizing agent is difficult to decompose, and it is also preferable in terms of cost.
本发明中所使用的氧化剂是用于使铜氧化并促进其溶解至溶液中的成分,作为其具体例来说,例如可列举出:氯酸、氯酸盐(钠盐、钾盐等)、亚氯酸、亚氯酸盐(钠盐、钾盐等)、次氯酸、次氯酸盐(钠盐、钾盐等)在上述氧化剂之中,优选氯酸盐、亚氯酸盐、次氯酸盐等的盐类,这是因为它们在溶液中的稳定性较高。上述氧化剂也可以2种以上合用。The oxidizing agent used in the present invention is a component for oxidizing copper and promoting its dissolution into a solution. Specific examples thereof include, for example, chloric acid, chlorate (sodium salt, potassium salt, etc.), Chlorous acid, chlorite (sodium salt, potassium salt, etc.), hypochlorous acid, hypochlorite (sodium salt, potassium salt, etc.) Among the above-mentioned oxidants, chlorate, chlorite, hypochlorite, etc. Salts such as chlorate because of their high stability in solution. The above-mentioned oxidizing agents may be used in combination of two or more.
腐蚀剂中的氧化剂的浓度优选1-15%,更优选5-10%。The concentration of the oxidizing agent in the etchant is preferably 1-15%, more preferably 5-10%.
在上述溶液为1-15%的情况下,可加快腐蚀速度,并且,氧化剂本身难以分解,而且从成本方面来看也较好。In the case of the above-mentioned solution being 1-15%, the corrosion rate can be accelerated, and the oxidizing agent itself is difficult to decompose, and it is also preferable in terms of cost.
本发明中所使用的铵盐是通过向溶液中供给铵离子而促进铜溶解的成分,作为其具体例来说,例如可列举出:氯化铵、溴化铵、硫酸铵、过硫酸铵、氨基磺酸铵、草酸铵、磷酸一铵、磷酸二铵、磷酸三铵、柠檬酸铵、柠檬酸二铵、己二酸铵、乳酸铵。The ammonium salt used in the present invention is a component that promotes the dissolution of copper by supplying ammonium ions to the solution. Specific examples thereof include ammonium chloride, ammonium bromide, ammonium sulfate, ammonium persulfate, Ammonium sulfamate, ammonium oxalate, monoammonium phosphate, diammonium phosphate, triammonium phosphate, ammonium citrate, diammonium citrate, ammonium adipate, ammonium lactate.
在上述铵盐之中,从与氧化剂的反应性低、可提高溶液的安全性这点上来看,优选氯化铵、溴化铵、硫酸铵、磷酸一铵、磷酸二铵、磷酸三铵、柠檬酸铵。上述铵盐也可以2种以上合用。Among the above-mentioned ammonium salts, ammonium chloride, ammonium bromide, ammonium sulfate, monoammonium phosphate, diammonium phosphate, triammonium phosphate, ammonium citrate. The aforementioned ammonium salts may be used in combination of two or more.
腐蚀剂中的铵盐的浓度优选为1~10%,更优选为2~6%。在上述浓度为1~10%的情况下,腐蚀速度不会过快,也不会过慢,比较适中,因此,不会造成深浅不均,容易得到平滑的铜表面。The concentration of the ammonium salt in the etchant is preferably 1 to 10%, more preferably 2 to 6%. When the above-mentioned concentration is 1-10%, the corrosion rate is neither too fast nor too slow, which is relatively moderate. Therefore, it will not cause uneven depth, and it is easy to obtain a smooth copper surface.
本发明中所使用的唑化合物是抑制垂直方向的铜的溶解、促进水平方向的铜的溶解的成分,作为其具体例来说,例如可列举出:咪唑、2-苯基咪唑、1-乙烯基咪唑、苯并咪唑、2-丁基苯并咪唑、2-苯乙基苯并咪唑、2-氨基苯并咪唑、2-巯基苯并咪唑等的咪唑类、1,2,4-三唑、3-氨基-1,2,4-三唑、1,2,3-苯并三唑、1-羟基苯并三唑、羧基苯并三唑、等的三唑类、四唑、5-苯基-1H-四唑、5-甲基-1H-四唑、5-氨基-1H-四唑等的四唑类、吡咪、苯并噻唑、2-巯基苯并噻唑等。The azole compound used in the present invention is a component that suppresses the dissolution of copper in the vertical direction and promotes the dissolution of copper in the horizontal direction. Specific examples thereof include imidazole, 2-phenylimidazole, 1-ethylene Imidazoles such as imidazole, benzimidazole, 2-butylbenzimidazole, 2-phenethylbenzimidazole, 2-aminobenzimidazole, 2-mercaptobenzimidazole, and 1,2,4-triazole , 3-amino-1,2,4-triazole, 1,2,3-benzotriazole, 1-hydroxybenzotriazole, carboxybenzotriazole, etc. triazoles, tetrazole, 5- Tetrazoles such as phenyl-1H-tetrazole, 5-methyl-1H-tetrazole, and 5-amino-1H-tetrazole, pyrimide, benzothiazole, 2-mercaptobenzothiazole, and the like.
在上述唑化合物之中,优选咪唑、1-乙烯基咪唑、1,2,4-三唑、3-氨基-1,2,4-三唑、1-羟基苯并三唑、四唑、5-甲基-1H-四唑、5-氨基-1H-四唑等的没有芳香族置换基的唑化合物,这是因为它们易溶于溶液中,并且使铜表面变为平滑的效果良好。上述唑化合物也可以2种以上合用。Among the above-mentioned azole compounds, imidazole, 1-vinylimidazole, 1,2,4-triazole, 3-amino-1,2,4-triazole, 1-hydroxybenzotriazole, tetrazole, 5 - Azole compounds without an aromatic substituent such as methyl-1H-tetrazole and 5-amino-1H-tetrazole, because they are easily soluble in a solution and have a good effect of smoothing the copper surface. The above-mentioned azole compounds may be used in combination of two or more.
腐蚀剂中的唑化合物的浓度优选为0.1~2%,更优选为0.4~1.2%。在上述浓度为0.1~2%的情况下,容易得到平滑的铜表面。The concentration of the azole compound in the etchant is preferably 0.1 to 2%, more preferably 0.4 to 1.2%. When the above-mentioned concentration is 0.1 to 2%, it is easy to obtain a smooth copper surface.
本发明的腐蚀剂是碱性,pH值通常为10~12的范围。The corrosive agent of the present invention is alkaline, and its pH value is usually in the range of 10-12.
还可以在本发明的腐蚀剂中配入各种添加剂,例如,为了使腐蚀剂更均匀化,也可以配入表面活性剂。Various additives may also be added to the etchant of the present invention. For example, a surfactant may be added to make the etchant more uniform.
通过将上述的各成分溶解在水,可很容易地对本发明的腐蚀剂进行调整。对于上述水来说,优选离子交换水等已除去离子性物质和不纯物的水。The etchant of the present invention can be easily adjusted by dissolving the above-mentioned components in water. The above-mentioned water is preferably water from which ionic substances and impurities have been removed, such as ion-exchanged water.
对于采用本发明的腐蚀剂进行处理的铜表面没有特别的限制,例如可以是铜箔、无电解铜镀膜、电解铜镀膜、铜喷镀膜等的表面。对于上述铜表面来说,优选已由氢氧化钠水溶液等进行碱洗净、或者由硫酸或盐酸进行酸洗净的清洁的表面。There is no particular limitation on the copper surface to be treated with the etchant of the present invention, for example, it may be the surface of copper foil, electroless copper plating, electrolytic copper plating, copper sprayed coating, and the like. For the above-mentioned copper surface, a clean surface that has been subjected to alkali cleaning with an aqueous sodium hydroxide solution or the like, or acid cleaning with sulfuric acid or hydrochloric acid is preferable.
作为使本发明的腐蚀剂接触铜表面的方法来说,例如可以使用喷射法、喷淋法、浸渍法等,然后进行水洗、干燥。As a method of bringing the etchant of the present invention into contact with the copper surface, for example, a spray method, a shower method, a dipping method, etc. can be used, followed by washing with water and drying.
对于使腐蚀剂和铜表面相接触时的条件没有特别限定,但通常腐蚀剂的温度优选20~30℃,接触时间优选30~120秒钟。The conditions for bringing the etchant into contact with the copper surface are not particularly limited, but usually the temperature of the etchant is preferably 20 to 30° C., and the contact time is preferably 30 to 120 seconds.
并且,腐蚀量(腐蚀深度)的优选范围随铜表面的表面状态或目标的平滑度的不同而不同,通常是1~4μm。In addition, the preferred range of the amount of corrosion (corrosion depth) varies depending on the surface state of the copper surface or the target smoothness, but is usually 1 to 4 μm.
若采用本发明的腐蚀剂来腐蚀铜表面,随着腐蚀的进行,可提高铜表面的平滑度。因此,在被处理面的凹凸较大时、或想要得到平滑度高的表面时,可以增大腐蚀量(腐蚀深度)。If the etchant of the present invention is used to corrode the copper surface, the smoothness of the copper surface can be improved as the corrosion progresses. Therefore, when the unevenness of the surface to be treated is large, or when a smooth surface is desired, the amount of etching (etching depth) can be increased.
如以上所述,通过使用本发明的腐蚀剂来腐蚀铜表面,可将铜表面腐蚀得很平滑。本发明的腐蚀剂有利于例如镀镍、镀金、镀银、镀锡等的镀金属的前处理等,可以提高镀金属的平滑性。并且,也有利于采用光蚀刻法形成印刷电路板的铜电路图案等情况下的粘贴感光胶的前处理等。As described above, by using the etchant of the present invention to etch the copper surface, the copper surface can be etched smoothly. The etchant of the present invention is beneficial to the pretreatment of metal plating such as nickel plating, gold plating, silver plating, tin plating, etc., and can improve the smoothness of metal plating. In addition, it is also advantageous for the pretreatment of pasting photoresist when forming the copper circuit pattern of the printed circuit board, etc. by the photolithography method.
【实施例】【Example】
实施例1~6和比较例1~2Embodiment 1~6 and comparative example 1~2
混合表1所示的成分,调制腐蚀剂。The components shown in Table 1 were mixed to prepare an etchant.
接着,将印刷电路板用覆铜层压板浸渍于5%的盐酸水溶液中,浸渍时间为15秒钟,然后进行水洗、干燥,洗净铜表面。在25℃下,喷射下述表1所示的腐蚀剂,时间为30秒钟,腐蚀2μm,然后进行水洗、干燥。而且,根据溶解下来的铜的重量、表面积和比重计算出腐蚀量的值。Next, the copper-clad laminate for printed circuit boards was immersed in a 5% hydrochloric acid aqueous solution for 15 seconds, washed with water, and dried to clean the copper surface. At 25° C., the etchant shown in Table 1 below was sprayed for 30 seconds to etch 2 μm, and then washed with water and dried. Also, the value of the amount of corrosion was calculated from the weight, surface area, and specific gravity of dissolved copper.
采用光泽度评价处理后的铜表面的平滑性。The smoothness of the treated copper surface was evaluated by glossiness.
光泽度是使用日本电色工业(株)制的便携式光泽度计PG-1M、并接照JIS Z 8741测定20度镜面光泽而得到的。将结果示于表1中。Gloss is obtained by using a portable gloss meter PG-1M manufactured by Nippon Denshoku Kogyo Co., Ltd., and measuring 20-degree specular gloss according to JIS Z 8741. The results are shown in Table 1.
比较例1Comparative example 1
与实施例1相同,调制腐蚀剂,并进行腐蚀,但铜表面几乎未被腐蚀。将得到的表面的光泽度示于表1中。In the same manner as in Example 1, an etchant was prepared and etched, but the copper surface was hardly corroded. Table 1 shows the glossiness of the obtained surface.
比较例2Comparative example 2
与实施例1相同,调制腐蚀剂,并腐蚀铜表面。将得到的表面的光泽度示于表1中。As in Example 1, an etchant was prepared and the copper surface was etched. Table 1 shows the glossiness of the obtained surface.
【表1】
如表1所示,通过使用本发明的腐蚀剂,可以将铜表面腐蚀为具有76.6以上的光泽度的平滑的表面。As shown in Table 1, by using the etchant of the present invention, the copper surface can be etched to a smooth surface having a glossiness of 76.6 or higher.
本发明可以提供一种在温和的条件下使铜表面平滑的腐蚀剂和使上述表面平滑的腐蚀方法。The present invention can provide an etchant for smoothing the copper surface under mild conditions and an etching method for smoothing the above-mentioned surface.
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| JP2001169718A JP4706081B2 (en) | 2001-06-05 | 2001-06-05 | Etching agent and etching method for copper or copper alloy |
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| KR101337263B1 (en) * | 2004-08-25 | 2013-12-05 | 동우 화인켐 주식회사 | Etchant composition for indium oxide layer and etching method using the same |
| RU2301981C1 (en) * | 2005-10-07 | 2007-06-27 | Государственное образовательное учреждение высшего профессионального образования Томский политехнический университет | Method of metallographic pickling stannous bronzes |
| JP4822519B2 (en) * | 2006-06-26 | 2011-11-24 | Jx日鉱日石金属株式会社 | Semiconductor wafer pretreatment agent and pretreatment method |
| US20080224092A1 (en) * | 2007-03-15 | 2008-09-18 | Samsung Electronics Co., Ltd. | Etchant for metal |
| JP5219304B2 (en) | 2010-12-14 | 2013-06-26 | メック株式会社 | Etching agent and etching method using the same |
| JP5885971B2 (en) * | 2011-09-08 | 2016-03-16 | 関東化學株式会社 | Etching solution for copper and copper alloy |
| KR101461180B1 (en) | 2012-04-26 | 2014-11-18 | (주)삼성화학 | Copper Echant without Hydrogen Peroxide |
| CN103695908A (en) * | 2013-12-27 | 2014-04-02 | 东莞市广华化工有限公司 | Novel organic alkali micro-etching solution |
| CN104694909B (en) * | 2014-07-03 | 2017-01-25 | 广东丹邦科技有限公司 | Copper surface coarsening agent |
| KR102367814B1 (en) * | 2016-03-30 | 2022-02-25 | 동우 화인켐 주식회사 | Etching solution composition for molybdenum-containing layer and manufacturing method of an array substrate for liquid crystal display using the same |
| TWI788361B (en) | 2017-06-01 | 2023-01-01 | 日商三菱綜合材料股份有限公司 | High-purity electrolytic copper |
| CN111485263B (en) * | 2019-01-25 | 2023-02-17 | 上海新阳半导体材料股份有限公司 | Lead frame deoxidant, preparation method and application thereof |
| KR102846566B1 (en) * | 2020-04-27 | 2025-08-18 | 나믹스 가부시끼가이샤 | Composite copper member |
| JP2022184639A (en) * | 2021-06-01 | 2022-12-13 | 上村工業株式会社 | copper etchant |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0866373A (en) * | 1995-10-03 | 1996-03-12 | Terumo Corp | Temperature measurement instrument with pulse measurement function |
| US5630950A (en) * | 1993-07-09 | 1997-05-20 | Enthone-Omi, Inc. | Copper brightening process and bath |
| CN1209468A (en) * | 1997-07-08 | 1999-03-03 | 美克株式会社 | Micro-etching agent for copper and copper alloy |
| CN1223308A (en) * | 1997-10-20 | 1999-07-21 | 摩托罗拉公司 | Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture |
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| JPS56102581A (en) * | 1980-01-17 | 1981-08-17 | Yamatoya Shokai:Kk | Etching solution of copper |
| JP2000282265A (en) * | 1999-03-31 | 2000-10-10 | Mec Kk | Copper or copper alloy microetchant and surface treatment method using the same |
-
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| US5630950A (en) * | 1993-07-09 | 1997-05-20 | Enthone-Omi, Inc. | Copper brightening process and bath |
| JPH0866373A (en) * | 1995-10-03 | 1996-03-12 | Terumo Corp | Temperature measurement instrument with pulse measurement function |
| CN1209468A (en) * | 1997-07-08 | 1999-03-03 | 美克株式会社 | Micro-etching agent for copper and copper alloy |
| CN1223308A (en) * | 1997-10-20 | 1999-07-21 | 摩托罗拉公司 | Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture |
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