CN1316749A - Mechanical process for preparing controllable nm-class conducting wire - Google Patents
Mechanical process for preparing controllable nm-class conducting wire Download PDFInfo
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- CN1316749A CN1316749A CN 01110205 CN01110205A CN1316749A CN 1316749 A CN1316749 A CN 1316749A CN 01110205 CN01110205 CN 01110205 CN 01110205 A CN01110205 A CN 01110205A CN 1316749 A CN1316749 A CN 1316749A
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Abstract
A process for mechanically preparing the nm conducting wire whose length and diameter are controllable incldues such steps as choosing the nm (1.5-98nm) particles of metal or semiconductor sol, dipping the scan probe of microscope in the sol, moving said nm particles on the substrate in the atom-level planar area by capillary action, obtaining the form distribution graphics of said nm particles, turning off feedback loop, and controlling the mechanical movement of nm particles to arrange needed nm conducting wire by said microscope.
Description
The invention belongs to the mechanical preparation method of length and controllable diameter nm-class conducting wire.
Existing reports such as some single nano-devices such as nanometer chi, nano pen, nanometer tweezers, nanometer plotter, the Leiber group of Harvard University has produced nanodevices such as nano-transistor and nano luminescent diode recently again.The nm/min sub-conductor that these nanodevices are coupled together is the key technology of following nano science.At present, the preparation of nm/min sub-conductor mainly contains following two kinds of methods: a kind of is that professor Penner as the disclosed California, USA of science magazine university Irvine branch school in 2000 utilizes the step method of modifying to generate various nm-class conducting wires or semiconductor nanowires; Another kind method is that the synthetic method of template prepares the nm/min sub-conductor.These two kinds of methods all have the following disadvantages to some extent, and the vary in diameter scope of the nm-class conducting wire that the step method of modifying generates is big, do not wait from about several nanometers to a micron; Length is also from several nanometers to millimeter level, even the Centimeter Level difference.The nm-class conducting wire length that template synthesis method generates is wayward, and not easily separated.
The mechanical preparation method that the purpose of this invention is to provide a kind of controllable nm-class conducting wire.This method is arranged by the mechanical movement of scanning probe microscopy control nano particle and is formed nm-class conducting wire, and the length of lead is controlled as required.
When the scanning probe microscopy needle point is the nano particle of 1.5-98 nanometer near diameter, because needle point and nano particle repel mutually, needle point is bent upwards, when crooked deformation produces enough elastic force, promote nano particle and do mechanical movement; The formation nm-class conducting wire is arranged in mechanical movement by scanning probe microscopy control nano particle, and the diameter of nm-class conducting wire is determined, is the diameter of nano particle; The length of lead is controlled as required.
The present invention selects the 1.5-98 nanophase to answer the metal that can form nano particle or the semiconductor colloidal sol nano particle of size according to the diameter of required nm-class conducting wire, utilize the needle point of scanning probe microscopy, this nano-particle solution that takes a morsel is dipped at the tip of nanotube or nano pen etc., relying on capillarity nano particle to be moved in the substrate microcell on atom level plane is seated in the substrate, obtain the topographic profile figure of nano particle again by scanning probe microscopy, then in this substrate microcell, close feedback loop and arrange the required nm-class conducting wire of formation by the mechanical movement of scanning probe microscopy control nano particle, the length of nm-class conducting wire generates as required.
The inventive method is because nano particle forms good one dimension lead through closely contacting after the mechanical impetus to arrange, even have the also conducting of very little gap between the nano particle, can not resemble other method influences the lead conduction owing to the defective of component performance owing to tunnel effect.
Embodiment provided by the invention is as follows:
Embodiment 1: the preparation of platinum nm-class conducting wire in the noble metal nano lead
Utilize the needle point of scanning probe microscopy to dip in the nano platinum particle solution of 5 nanometers that take a morsel, relying on capillarity nano platinum particle to be moved in the mica substrate microcell on atom level plane is seated in the substrate, obtain the topographic profile figure of nano platinum particle again by scanning probe microscopy, close feedback loop is controlled nano platinum particle under noncontact mode by scanning probe microscopy mechanical movement arrangement formation one dimension platinum nm-class conducting wire.
Embodiment 2: the preparation of silver-colored nm-class conducting wire in the noble metal nano lead
Utilize nanotube to dip in to take a morsel the silver nano-particle solution of 35 nanometers, relying on capillarity Nano silver grain to be moved in the substrate of glass microcell on atom level plane is seated in the substrate, obtain the topographic profile figure of Nano silver grain again by scanning probe microscopy, close feedback loop is controlled Nano silver grain under noncontact mode by scanning probe microscopy mechanical movement arrangement formation one dimension silver nm-class conducting wire.
Embodiment 3: the preparation of gold nano lead in the noble metal nano lead
Utilize the needle point of scanning probe microscopy to dip in the solution of gold nanoparticles of 98 nanometers that take a morsel, relying on capillarity golden nanometer particle to be moved in the mica substrate microcell on atom level plane is seated in the substrate, obtain the topographic profile figure of golden nanometer particle again by scanning probe microscopy, close feedback loop is controlled golden nanometer particle under noncontact mode by scanning probe microscopy mechanical movement arrangement formation one dimension gold nano lead.
Embodiment 4: the preparation of cadmium nm-class conducting wire in the common metal nano conductor
The cadmium nano-particle solution of 2 nanometers of utilizing nanotube to dip in to take a morsel, relying on capillarity the cadmium nano particle to be moved in the substrate of glass microcell on atom level plane is seated in the substrate, obtain the topographic profile figure of cadmium nano particle again by scanning probe microscopy, close feedback loop is controlled the cadmium nano particle under noncontact mode by scanning probe microscopy mechanical movement arrangement formation one dimension cadmium nm-class conducting wire.
Embodiment 5: the preparation of copper nm-class conducting wire in the common metal nano conductor
The copper nano-particle solution of 12 nanometers of utilizing nanotube to dip in to take a morsel, relying on capillarity copper nano-particle to be moved at the bottom of the silicon wafer-based on atom level plane is seated in the substrate in the microcell, obtain the topographic profile figure of copper nano-particle again by scanning probe microscopy, close feedback loop is controlled copper nano-particle under noncontact mode by scanning probe microscopy mechanical movement arrangement formation one dimension copper nm-class conducting wire.
Embodiment 6: the preparation of cadmium selenide semiconductor nanowires in the semiconductor nanowires
Utilize the needle point of scanning probe microscopy to dip in the CdSe nano-particle solution of 1.5 nanometers that take a morsel, rely on capillarity CdSe nano-particle to be moved in the substrate of glass microcell on atom level plane and be seated in the substrate; Obtain the topographic profile figure of CdSe nano-particle again by scanning probe microscopy, close feedback loop is controlled CdSe nano-particle under noncontact mode by scanning probe microscopy mechanical movement arrangement formation one dimension cadmium selenide nano lead.
Embodiment 7: the preparation of CdS semiconduct nano wire in the semiconductor nanowires
Utilize the needle point of scanning probe microscopy to dip in the cadmium sulfide nano-particles solution of 3.1 nanometers that take a morsel, rely on capillarity cadmium sulfide nano-particles to be moved in the mica substrate microcell on atom level plane and be seated in the substrate; Obtain the topographic profile figure of cadmium sulfide nano-particles again by scanning probe microscopy, close feedback loop is controlled cadmium sulfide nano-particles under noncontact mode by scanning probe microscopy mechanical movement arrangement formation one dimension cadmium sulfide nano lead.
Embodiment 8: the preparation of titanium dioxide semiconductor nano wire in the semiconductor nanowires
Utilize the scanning probe microscopy nano pen to dip in to take a morsel the titanium dioxide nano-particle solution of 5 nanometers, rely on capillarity titanium dioxide nano-particle to be moved in the mica substrate microcell on atom level plane and be seated in the substrate; Obtain the topographic profile figure of titanium dioxide nano-particle again by scanning probe microscopy, close feedback loop is controlled titanium dioxide nano-particle under noncontact mode by scanning probe microscopy mechanical movement arrangement formation one-dimensional titanium dioxide nm-class conducting wire.
Embodiment 9: the preparation of zinc sulfide semiconductor nano wire in the semiconductor nanowires
Utilize the nano pen of scanning probe microscopy to dip in the Zinc sulfide nano-particle solution of 15 nanometers that take a morsel, rely on capillarity Zinc sulfide nano-particle to be moved in the substrate of glass microcell on atom level plane and be seated in the substrate; Obtain the topographic profile figure of Zinc sulfide nano-particle again by scanning probe microscopy, close feedback loop is controlled Zinc sulfide nano-particle under noncontact mode by scanning probe microscopy mechanical movement arrangement formation one dimension zinc sulfide nano lead.
Embodiment 10: the preparation of lead sulfide semiconductor nano wire in the semiconductor nanowires
Utilize the scanning probe microscopy nano pen to dip in to take a morsel the vulcanized lead nano-particle solution of 25 nanometers, rely on capillarity the vulcanized lead nano particle to be moved at the bottom of the silicon wafer-based on atom level plane and be seated in the substrate in the microcell; Obtain the topographic profile figure of vulcanized lead nano particle again by scanning probe microscopy, close feedback loop is controlled the vulcanized lead nano particle under noncontact mode by scanning probe microscopy mechanical movement arrangement formation one dimension vulcanized lead nm-class conducting wire.
Embodiment 11: the preparation of silver sulfide semiconductor nanowires in the semiconductor nanowires
Utilize the scanning probe microscopy nano pen to dip in to take a morsel the silver sulfide nano-particle solution of 5 nanometers, rely on capillarity the silver sulfide nano particle to be moved in the mica substrate microcell on atom level plane and be seated in the substrate; Obtain the topographic profile figure of silver sulfide nano particle again by scanning probe microscopy, close feedback loop is controlled the silver sulfide nano particle under noncontact mode by scanning probe microscopy mechanical movement arrangement formation one dimension silver sulfide nm-class conducting wire.
Embodiment 12: the preparation of silver iodide semiconductor nano wire in the semiconductor nanowires
Utilize the scanning probe microscopy nano pen to dip in to take a morsel the silver iodide nano-particle solution of 18 nanometers, rely on capillarity the silver iodide nano particle to be moved at the bottom of the silicon wafer-based on atom level plane and be seated in the substrate in the microcell; Obtain the topographic profile figure of silver iodide nano particle again by scanning probe microscopy, close feedback loop is controlled the silver iodide nano particle under noncontact mode by scanning probe microscopy mechanical movement arrangement formation one dimension silver iodide nm-class conducting wire.
Embodiment 13: the preparation of zinc oxide semi-conductor nano wire in the semiconductor nanowires
Utilize the scanning probe microscopy nano pen to dip in to take a morsel the zinc oxide nano-particle solution of 51 nanometers, rely on capillarity zinc oxide nano-particle to be moved in the mica substrate microcell on atom level plane and be seated in the substrate; Obtain the topographic profile figure of zinc oxide nano-particle again by scanning probe microscopy, close feedback loop and arrange formation one-dimension zinc oxide nm-class conducting wire by the mechanical movement of scanning probe microscopy controlled oxidation zinc nano particle under noncontact mode.
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011102055A CN1167085C (en) | 2001-04-02 | 2001-04-02 | Mechanical preparation of controllable nanowires |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011102055A CN1167085C (en) | 2001-04-02 | 2001-04-02 | Mechanical preparation of controllable nanowires |
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| CN1316749A true CN1316749A (en) | 2001-10-10 |
| CN1167085C CN1167085C (en) | 2004-09-15 |
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| CNB011102055A Expired - Fee Related CN1167085C (en) | 2001-04-02 | 2001-04-02 | Mechanical preparation of controllable nanowires |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100484867C (en) * | 2004-10-22 | 2009-05-06 | 中国科学院上海应用物理研究所 | Methods for Isolating and Replacing Nanoparticles |
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2001
- 2001-04-02 CN CNB011102055A patent/CN1167085C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100484867C (en) * | 2004-10-22 | 2009-05-06 | 中国科学院上海应用物理研究所 | Methods for Isolating and Replacing Nanoparticles |
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| CN1167085C (en) | 2004-09-15 |
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