CN1309165C - unidirectional conduction device - Google Patents
unidirectional conduction device Download PDFInfo
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- CN1309165C CN1309165C CNB2004100458567A CN200410045856A CN1309165C CN 1309165 C CN1309165 C CN 1309165C CN B2004100458567 A CNB2004100458567 A CN B2004100458567A CN 200410045856 A CN200410045856 A CN 200410045856A CN 1309165 C CN1309165 C CN 1309165C
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- 230000005669 field effect Effects 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 8
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 8
- 230000008878 coupling Effects 0.000 claims 4
- 238000010168 coupling process Methods 0.000 claims 4
- 238000005859 coupling reaction Methods 0.000 claims 4
- 230000003292 diminished effect Effects 0.000 claims 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003534 oscillatory effect Effects 0.000 description 1
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Abstract
A unidirectional conducting device comprises a metal oxide semiconductor field effect transistor and a driver, wherein a source electrode and a drain electrode of the metal oxide semiconductor field effect transistor are respectively used as a P pole and an N pole of the unidirectional conducting device, and the driver comprises a BJT differential amplifier. The driver is used for detecting the potential difference between the source electrode and the drain electrode of the metal oxide semiconductor field effect transistor, and when the potential of the P electrode is higher than that of the N electrode, the driver outputs a driving potential to the grid electrode of the metal oxide semiconductor field effect transistor so as to conduct the metal oxide semiconductor field effect transistor. If the potential of the P electrode is lower than that of the N electrode, the driver can not output the driving potential required by the metal oxide semiconductor field effect transistor to be conducted, and the unidirectional conducting device is turned off at the moment, so that the unidirectional conducting device has the characteristic of unidirectional conducting.
Description
Technical field
The present invention is relevant for a kind of unidirectional conduction device, particularly relevant for a kind of unidirectional conduction device with low forward voltage.
Background technology
In the needed various electronic devices of electronic circuit, diode is one of indispensable device.But diode has a shortcoming always, and the forward voltage (VF) that is exactly diode is not 0V, and is about 0.6V.Though by the change of semiconductor fabrication process, can obtain the Schottky diode (Schottky Diode) that forward voltage is about 0.4V.Though Schottky diode can satisfy the demand on the most circuit design, so need the characteristic of the unidirectional conducting of diode, and require the circuit of extremely low forward voltage for some, Schottky diode also can't satisfy the demand of this kind circuit.Therefore, be necessary to develop the extremely low unidirectional conduction device of forward voltage in fact,, and improve the efficient that power supply uses with the power loss of reduction circuit.
Please refer to Fig. 5, the power circuit 500 of general diode is used in its expression.Battery BT1 and battery BT2 are in order to provide load RL required power supply, and this load is mobile computer for example.When the current potential of battery BT1 was higher than the current potential of battery BT2, because this moment, diode D1 was a forward bias, and diode D2 was reverse biasing, so diode D1 conducting and diode D2 shutoff, load RL can obtain power supply by the higher battery BT1 of current potential.Otherwise when if the current potential of battery BT1 is lower than the current potential of battery BT2, load RL can obtain power supply by the higher battery BT2 of current potential.Because the diode D1 and the D2 at this place are general diode, so the voltage of load RL can reduce 0.45V approximately than the supply power voltage of battery BT1 or BT2.
Summary of the invention
In view of this, purpose of the present invention is providing a kind of unidirectional conduction device exactly, utilizes mos field effect transistor and BJT differential amplifier, makes this unidirectional conduction device realize unidirectional on state characteristic with extremely low forward voltage.
According to purpose of the present invention, a kind of unidirectional conduction device is proposed, comprise a first transistor and one drive circuit.This first transistor has one source pole, a drain electrode and a grid.And drive circuit is couple to the first transistor.This drive circuit comprises transistor seconds, the 3rd transistor, first impedance, second impedance and the 3rd impedance.This transistor seconds has second emitter-base bandgap grading, second base stage and second collector electrode.The 3rd transistor has the 3rd emitter-base bandgap grading, the 3rd base stage and the 3rd collector electrode.The 3rd emitter-base bandgap grading is couple to source electrode, and the 3rd collector electrode couples grid, and second base stage and the 3rd base stage couple, and second base stage and second collector electrode couple.And an end of first impedance is couple to drain electrode, and the other end is couple to second emitter-base bandgap grading.One end of second impedance is couple to second collector electrode, and the other end is couple to a fixed voltage.One end of the 3rd impedance is couple to the 3rd collector electrode, and the other end is couple to fixed voltage.Wherein this first transistor is a P-channel metal-oxide-semiconductor field-effect transistor, and this transistor seconds and the 3rd transistor are a positive-negative-positive bipolar junction transistor.
According to purpose of the present invention, a kind of unidirectional conduction device is also proposed, comprise a first transistor and one drive circuit.This first transistor has one source pole, a drain electrode and a grid.And drive circuit is couple to the first transistor.This drive circuit comprises transistor seconds, the 3rd transistor, first impedance, second impedance and the 3rd impedance.This transistor seconds has second emitter-base bandgap grading, second base stage and second collector electrode.The 3rd transistor has the 3rd emitter-base bandgap grading, the 3rd base stage and the 3rd collector electrode.The 3rd emitter-base bandgap grading is couple to source electrode, and the 3rd collector electrode couples grid, and second base stage and the 3rd base stage couple, and second base stage and second collector electrode couple.And an end of first impedance is couple to drain electrode, and the other end is couple to second emitter-base bandgap grading.One end of second impedance is couple to second collector electrode, and the other end is couple to a fixed voltage.One end of the 3rd impedance is couple to the 3rd collector electrode, and the other end is couple to fixed voltage.Wherein this first transistor is a n channel metal oxide semiconductor field effect transistor, and this transistor seconds and the 3rd transistor are a bipolar npn junction transistor.
Description of drawings
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail as follows:
Fig. 1 represents a kind of unidirectional conduction device according to one first embodiment of the present invention.
Fig. 2 represents the Pspice analog result.
Fig. 3 represents the Pspice analog result.
Fig. 4 represents according to a kind of unidirectional conduction device of an alternative embodiment of the invention.
Fig. 5 represents to use the power circuit of general diode.
Fig. 6 represents to use a kind of power circuit of unidirectional conduction device of the present invention.
The drawing reference numeral explanation
100,400: unidirectional conduction device
102,402: driver
302,304: curve
500,600: power circuit
Q1: mos field effect transistor
Q2, Q3: transistor
R1, R2, R3, R4, R5: resistance
Embodiment
Please refer to Fig. 1, its expression is according to a kind of unidirectional conduction device 100 of one first embodiment of the present invention.Unidirectional conduction device 100 utilizes mos field effect transistor Q1 and driver 102, so that unidirectional conduction device 100 is realized the characteristic of unidirectional conducting with extremely low forward voltage.Unidirectional conduction device 100 comprises a mos field effect transistor Q1, positive-negative-positive bipolar junction transistor (BJT) transistor Q2, positive-negative-positive (BJT) transistor Q3 and resistance R 1, R2, R3, R4 and R5.Mos field effect transistor Q1 is P raceway groove (P channel) transistor (being PMOS), and its source S and drain D are respectively as the N utmost point and the P utmost point of unidirectional conduction device 100.Transistor Q2 and transistor Q3 form the BJT differential amplifier, and the base stage B2 of transistor Q2 is couple to the collector electrode C2 of transistor Q2 via resistance R 4.The base stage B3 of transistor Q3 is couple to the collector electrode C2 of transistor Q2 via resistance R 5.The collector electrode C2 of transistor Q2 and the collector electrode C3 of transistor Q3 are couple to ground via resistance R 2 with R3 respectively.The collector electrode C3 of transistor Q3 is couple to the grid G of PMOS transistor Q1, and the emitter-base bandgap grading E3 of transistor Q3 is couple to the source S of PMOS transistor Q1.One end of resistance R 1 is couple to the drain D of transistor Q1, and the other end of resistance R 1 is couple to the emitter-base bandgap grading E2 of transistor Q2.Wherein, resistance R 2 equates with the value of R3, and the value of resistance R 2 is much larger than the value of resistance R 1.Preferably, the value of resistance R 2 is hundreds of times of value of resistance R 1.
Now the operation principle with unidirectional conduction device 100 is described as follows.When unidirectional conduction device 100 is forward bias, the voltage height of the voltage ratio N utmost point of the P utmost point, this moment, transistor Q2 had a quiescent current IE2 to flow through, and this quiescent current IE2 flows through after the resistance R 1, produces a voltage VR1 at the two ends of resistance R 1.Voltage VR1 preferably is tens of millivolts (mV).When the voltage difference that rises to P end and N end when the voltage of P end was higher than VR1, the emitter-base bandgap grading E2 of transistor Q2 can rise and rise along with the P terminal voltage.Because the value of resistance R 2 is very big, though the voltage of P end rises, the quiescent current IE2 of transistor Q2 can almost maintain definite value, makes the VEB2 (the emitter-base bandgap grading E2 of transistor Q2 and the voltage between the base stage B2) of transistor Q2 also almost keep fixing.Owing to the emitter-base bandgap grading E2 of transistor Q2 along with the voltage of P end rises, make the voltage of base stage B2 of transistor Q2 also along with the voltage rising of the emitter-base bandgap grading E2 of transistor Q2 and rise.Therefore, the voltage of the base stage B3 of transistor Q3 is also along with the voltage with the base stage B2 of transistor Q2 rises and rises.But because that the voltage of the N utmost point of unidirectional conduction device 100 is kept is fixing, it is fixing to make the voltage of emitter-base bandgap grading E3 of transistor Q3 keep, and makes that the VEB3 (the emitter-base bandgap grading E3 of transistor Q3 and the voltage between the base stage B3) of transistor Q3 can decline.So, the electric current I C3 of the collector electrode C3 of the transistor Q3 that flows through will descend, and makes the voltage VR3 of resistance R 3 descend.Therefore, will make the voltage of transistor Q3 collector electrode C3 descend.When the voltage of transistor Q3 collector electrode C3 dropped to the VSG (source S of transistor Q1 and the voltage between the grid G) that makes transistor Q1 greater than the absolute value of the threshold voltage Vfh of transistor Q1, transistor Q1 began conducting, and forward current ID flows to the N utmost point from the P utmost point.
When N ultimate ratio P pole tension was high, the voltage of the emitter-base bandgap grading E3 of transistor Q3 was higher than the voltage of the emitter-base bandgap grading E2 of transistor Q2 conversely speaking,, so transistor Q3 conducting.The collector electrode C3 of transistor Q3 is a high potential, makes transistor Q1 turn-off fully, therefore, will make unidirectional conduction device 100 be reverse biasing, unidirectional conduction device 100 not conductings.When the voltage difference of the N utmost point and the P utmost point is higher than the VEB2 of transistor Q2, one backward current will be flowed to the source electrode B3 of transistor Q3 by the N utmost point via the emitter-base bandgap grading E3 of transistor Q3, flow to the base stage B2 of transistor Q2 again through resistance R 5 and R4, flow through emitter-base bandgap grading E2 and the resistance R 1 of transistor Q2 again, flow to the P utmost point at last.So the existence of resistance R 4 and R5 can reduce the size of this backward current.If transistor Q2 and transistor Q3 are higher than the transistor of the ceiling voltage of the N utmost point for VEB voltage, then the unidirectional conduction device 100 of present embodiment can not need use resistance R 4 and R5, and base stage B2 and the B3 of transistor Q2 and transistor Q3 can directly electrically connect.
Now lift an example of each resistance value, and the analog result of cooperation PSpice is to illustrate further the first embodiment of the present invention.Please refer to Fig. 2 and Fig. 3, its represented voltage that is respectively the N utmost point of unidirectional conduction device 100 is fixed as 10V, resistance R 1 is 1.5K ohm, resistance R 4 is 100K ohm with resistance R 5, when resistance R 2 is 1M ohm with resistance R 3, the analog result figure (Fig. 3) of the voltage Vg (curve 304) of the voltage VQ2C (curve 302) of the collector electrode C2 of the analog result figure (Fig. 2) of the P utmost point of unidirectional conduction device 100 and the voltage difference VPN of the N utmost point and forward current ID and VPN and transistor Q2 and the grid G of transistor Q1.As shown in Figure 2, the transverse axis coordinate is the voltage difference VPN of the P utmost point and N interpolar, and the longitudinal axis is forward current ID.As shown in Figure 2, when VPN equaled 30mV, transistor Q1 began conducting.Wherein, after the transistor Q1 conducting, the slope of the value of voltage Vg and forward bias VPN and forward current ID is determined by the common emitter currentgain of Q3.Please refer to Fig. 3, when voltage Vg equaled the collector electrode C voltage VQ2C of transistor Q2, Vg and VQ2C be the voltage VR1 of resistance R 1 no better than, and VR1 approximates (VP-VBE2) * (R1/ (R1+R2))=(10-0.6) * (1.5k/ (1.5k+1000k))=14mV, wherein, VP is the voltage of the P utmost point.Along with the increase of VPN, the voltage Vg of the grid G utmost point of transistor Q1 is along with decline.
Wherein, when forward current ID less than 0.2 ampere-hour, transistor Q1 conducting fully.Along with the reduction of forward current ID, the impedance meeting of transistor Q1 increases.When forward current ID is zero, transistor Q1 will turn-off fully.The actual curve of forward current ID shown in Figure 2 will be decided by the characteristic of transistor Q1.
Transistor Q2 and Q3 preferably should adopt pair transistor in addition, so the characteristic of transistor Q2 and Q3 and parameter will be comparatively approaching, but also can not be identical.For unidirectional conduction device 100 no backward currents are produced, so the forward voltage during 100 conductings of unidirectional conduction device in design must be greater than transistor Q2 and Q3 bucking voltage (Offset voltage).The transition voltage of the grid G of the resistance value of resistance R 1 and transistor Q1 can determine the value of forward voltage.When the resistance value of resistance R 1 was big, forward voltage was bigger; The resistance value of resistance R 1 hour, forward voltage is less.Therefore, can be by adjusting the resistance value of resistance R 1, the forward voltage when changing unidirectional conduction device 100 conductings.
Please refer to Fig. 4, it represents to comprise N raceway groove (N channel) mos field effect transistor Q1 (NMOS) and driver 402 according to a kind of unidirectional conduction device 400 of an alternative embodiment of the invention.The source S of transistor Q1 and drain D are respectively as the P utmost point and the N utmost point of unidirectional conduction device.The design of unidirectional conduction device 400 and operation principle and unidirectional conduction device 100 shown in Figure 1 are similar.As long as change the transistor Q1 of unidirectional conduction device 100 into the N channel transistor by p channel transistor, and PNP transistor Q2 and Q3 are replaced with NPN transistor can obtain unidirectional conduction device 400.
Please refer to Fig. 6, a kind of power circuit 600 of unidirectional conduction device 100 of the present invention is used in its expression.When the unidirectional conduction device 100 of using the first embodiment of the present invention during at power circuit 600, the voltage of its load RL can reduce approximately than the supply power voltage of battery BT1 or BT2 and has only tens of mV, much smaller than power circuit 500 (see figure 5)s of the general diode of known use.
The disclosed unidirectional conduction device of the above embodiment of the present invention has the following advantages:
1. forward voltage is extremely low.
2. converse electrical leakage current ratio Schottky diode is low.
3. the operation of forward conduction and backward stop is very accurate, and does not have the situation that reverse big electric current produces.
4. when unidirectional conduction device transferred reverse bias to by forward bias, mos field effect transistor converted the service area to by the saturation area of forward, converted reverse cut-off region again to, and it is the variation of asymptotic expression.So when the P utmost point of unidirectional conduction device and the voltage difference of the N utmost point approached zero volt, unidirectional conduction device of the present invention did not have the phenomenon of oscillatory instability.
5. when unidirectional conduction device of the present invention being applied to rectification circuit, can raise the efficiency.
In sum, though the present invention with a preferred embodiment openly as above, right its is not in order to limit the present invention, any those skilled in the art, under the situation that does not break away from the spirit and scope of the present invention, can carry out various changes and modification, therefore scope of the present invention is as the criterion with the claim restricted portion that is proposed.
Claims (7)
1. unidirectional conduction device, this unidirectional conduction device comprises:
One the first transistor has one source pole, a drain electrode and a grid; And
One drive circuit is couple to this first transistor, and this drive circuit comprises:
One transistor seconds has one second emitter-base bandgap grading, second base stage and second collector electrode;
One the 3rd transistor has one the 3rd emitter-base bandgap grading, the 3rd base stage and the 3rd collector electrode, and the 3rd emitter-base bandgap grading is couple to this source electrode, and the 3rd collector electrode couples this grid, and this second base stage and the 3rd base stage couple, and this second base stage and this second collector electrode couple;
One first impedance, an end of this first impedance is couple to this drain electrode, and the other end of this first impedance is couple to this second emitter-base bandgap grading;
One second impedance, an end of this second impedance is couple to this second collector electrode, and the other end of this second impedance is couple to a fixed voltage; And
One the 3rd impedance, an end of the 3rd impedance is couple to the 3rd collector electrode, and the other end of the 3rd impedance is couple to this fixed voltage;
Wherein this first transistor is a P-channel metal-oxide-semiconductor field-effect transistor, and this transistor seconds and the 3rd transistor are a positive-negative-positive bipolar junction transistor.
2. unidirectional conduction device as claimed in claim 1, wherein this second impedance equates with the 3rd impedance.
3. unidirectional conduction device as claimed in claim 2, wherein this drive circuit also comprises:
One the 4th impedance, this second base stage arrives this second collector electrode via the 4th impedance coupling; And
One the 5th impedance, the 3rd base stage is via the 5th impedance coupling this second collector electrode to this transistor seconds.
4. unidirectional conduction device, this unidirectional conduction device comprises:
One the first transistor has one source pole, a drain electrode and a grid; And
One drive circuit is couple to this first transistor, and this drive circuit comprises:
One transistor seconds has one second emitter-base bandgap grading, second base stage and second collector electrode;
One the 3rd transistor has one the 3rd emitter-base bandgap grading, the 3rd base stage and the 3rd collector electrode, and the 3rd emitter-base bandgap grading is couple to this source electrode, and the 3rd collector electrode couples this grid, and this second base stage and the 3rd base stage couple, and this second base stage and this second collector electrode couple;
One first impedance, an end of this first impedance is couple to this drain electrode, and the other end of this first impedance is couple to this second emitter-base bandgap grading;
One second impedance, an end of this second impedance is couple to this second collector electrode, and the other end of this second impedance is couple to a fixed voltage; And
One the 3rd impedance, an end of the 3rd impedance is couple to the 3rd collector electrode, and the other end of the 3rd impedance is couple to this fixed voltage;
Wherein this first transistor is a n channel metal oxide semiconductor field effect transistor, and this transistor seconds and the 3rd transistor are a bipolar npn junction transistor.
5. unidirectional conduction device as claimed in claim 4, wherein this second impedance equates with the 3rd impedance.
6. unidirectional conduction device as claimed in claim 5, wherein this drive circuit also comprises:
One the 4th impedance, this second base stage arrives this second collector electrode via the 4th impedance coupling; And
One the 5th impedance, the 3rd base stage is via the 5th impedance coupling this second collector electrode to this transistor seconds.
7. as claim 1 or 4 described unidirectional conduction devices, wherein the forward voltage of this unidirectional conduction device is relevant with the resistance of this first impedance, when the resistance of first impedance became big, it is big that this forward voltage becomes: when the resistance of first impedance diminished, this forward voltage diminished.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100458567A CN1309165C (en) | 2004-05-20 | 2004-05-20 | unidirectional conduction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100458567A CN1309165C (en) | 2004-05-20 | 2004-05-20 | unidirectional conduction device |
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| CN1700595A CN1700595A (en) | 2005-11-23 |
| CN1309165C true CN1309165C (en) | 2007-04-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2004100458567A Expired - Lifetime CN1309165C (en) | 2004-05-20 | 2004-05-20 | unidirectional conduction device |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI589107B (en) * | 2016-08-19 | 2017-06-21 | 廣達電腦股份有限公司 | One-direction conduct device |
| CN109756213B (en) * | 2017-11-03 | 2023-03-10 | 尼克森微电子股份有限公司 | One-way conduction device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03243119A (en) * | 1990-02-19 | 1991-10-30 | Nippon Telegr & Teleph Corp <Ntt> | Or gate |
| JPH11136105A (en) * | 1997-11-04 | 1999-05-21 | Sony Corp | Voltage comparator circuit |
| CN1311443A (en) * | 2000-02-18 | 2001-09-05 | 密克罗奇普技术公司 | Band-gas voltage comparator used for low voltage testing circuit |
| US6420906B1 (en) * | 2000-09-29 | 2002-07-16 | Allied Telesis Kabushiki Kaisha | FET-OR circuit and power supply circuit using the same |
| CN1449084A (en) * | 2002-04-04 | 2003-10-15 | 广达电脑股份有限公司 | Power supply control device for electronic device equipped with multiple batteries |
-
2004
- 2004-05-20 CN CNB2004100458567A patent/CN1309165C/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03243119A (en) * | 1990-02-19 | 1991-10-30 | Nippon Telegr & Teleph Corp <Ntt> | Or gate |
| JPH11136105A (en) * | 1997-11-04 | 1999-05-21 | Sony Corp | Voltage comparator circuit |
| CN1311443A (en) * | 2000-02-18 | 2001-09-05 | 密克罗奇普技术公司 | Band-gas voltage comparator used for low voltage testing circuit |
| US6420906B1 (en) * | 2000-09-29 | 2002-07-16 | Allied Telesis Kabushiki Kaisha | FET-OR circuit and power supply circuit using the same |
| CN1449084A (en) * | 2002-04-04 | 2003-10-15 | 广达电脑股份有限公司 | Power supply control device for electronic device equipped with multiple batteries |
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| CN1700595A (en) | 2005-11-23 |
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