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CN1396667A - LED packaging - Google Patents

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Publication number
CN1396667A
CN1396667A CN01120616A CN01120616A CN1396667A CN 1396667 A CN1396667 A CN 1396667A CN 01120616 A CN01120616 A CN 01120616A CN 01120616 A CN01120616 A CN 01120616A CN 1396667 A CN1396667 A CN 1396667A
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China
Prior art keywords
light
emitting diode
groove
substrate
silicon wafer
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Pending
Application number
CN01120616A
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Chinese (zh)
Inventor
陈兴
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Solidlite Corp
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Solidlite Corp
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Publication date
Application filed by Solidlite Corp filed Critical Solidlite Corp
Priority to CN01120616A priority Critical patent/CN1396667A/en
Publication of CN1396667A publication Critical patent/CN1396667A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting

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Abstract

The invention takes a silicon wafer as a substrate, wet etching is carried out by utilizing the crystal face of the silicon wafer to form a groove, a through hole electrode is manufactured by utilizing dry etching on the back face of the silicon substrate, an insulated gasification film layer or a nitride film layer is formed by utilizing the silicon face, then a reflecting layer and an electrode layer are plated, a light emitting diode crystal grain is placed in the groove of the silicon substrate, and the steps of crystal fixing, routing, sealing, cutting and the like are carried out, thus forming the SMD light emitting diode finished product. The invention has the advantages of good heat dissipation, high temperature resistance, miniaturization and the like.

Description

The encapsulation of light-emitting diode
Technical field
The invention belongs to a kind of sealing of light-emitting diode, specifically, relate to a kind of sealing of binding type light-emitting diode.
Background technology
The encapsulation of surface-mounted light-emitting diode (SMD LED) at present mainly divides two kinds of circuit board type and support rack types, wherein support rack type SMD LED adopt metallic support be substrate again with after jetting plastic groove or the sealing of mold casting forming (molding) mode and cutting formation SMD type LED as shown in Figure 1.Circuit board type SMD LED is to be that substrate forms SMD type LED as shown in Figure 2 with sealing of mold casting forming (molding) mode and cutting again with composite material circuit board, the SMD LED that comes out with this dual mode made at present has some common drawback, one is exactly that temperature tolerance is not enough, when engaging with other circuit board lines, the SMD element must cross high temperature furnace (about 250-300 ℃) especially, the molding sealing temperature tolerance deficiency of SMD LED, general sealing Tg point has only about 120 ℃ and is different with the thermal coefficient of expansion of substrate or support, because of unusual bad phenomenon takes place in regular meeting after crossing high temperature furnace at SMD LED element; Another shortcoming is that thermal diffusivity is not good, and adhesive material and substrate heat transfer property are not good, and LED element itself also is a small-sized heater, and temperature rise improves the luminous efficiency and the quality meeting of element influential when thermal diffusivity is not good; Its reflection recess was difficult for making when another shortcoming was microminiaturization, in the LED potted element, there are reflection recess and the brightness that does not have reflection recess to send to differ (is benchmark with lighting angle 30 degree) more than one times, (1.6 * 0.7mm), 0402 (1.0 * 0.5mm) SMD LED sizes will have the groove reflector and be difficult to basically accomplish in conventional process at microminiaturization 0603.
Temperature tolerance is not good, thermal diffusivity is not good, the microminiaturization reflection recess is difficult for making, and is traditional SMDLED greatest problem place.
Summary of the invention
Advantages such as purpose of the present invention is providing a kind of sealing of light-emitting diode, has the thermal endurance height, and it is easy to make opposing slot, and thermal diffusivity is good, and microminiaturization is easy.
For achieving the above object, the encapsulation of a kind of light-emitting diode provided by the invention, it is the groove reflection seat that photoresist layer utilizes the wet etching mode to etch behind exposure imaging to have inclined wall on the silicon wafer substrate front, in addition at the back side of silicon wafer substrate same on photoresist layer and relative position at the bottom portion of groove back side be provided with the electrode hole pattern and behind exposure imaging, be used in etching mode and etch the perforation electrode hole, photoresistance is removed in the back, make the silicon substrate surface form the insulating barrier of one deck silica or silicon nitride through high temperature furnace oxidation or nitrogen treatment silicon wafer substrate again, utilize plating mode to make silicon substrate just again, all plate the layer of metal conductive layer in reverse side and the perforation electrode hole, and utilize laser processing that the electrode surface in the groove is divided into just to have, the electrode contact surface of negative electrode is in order to being placed in one and and electrode engagement of LED luminescent grain.
Wherein the plating conductive layer must have conduction and light reflection function simultaneously, and its material is Ag, Au, Pd, pt etc.
Wherein silicon wafer substrate selects for use the silicon wafer of 100 crystal orientations can etch the groove of inclined wall.
Wherein silicon wafer substrate uses the silicon wafer energy etching of 110 crystal orientations to provide the groove of vertical wall.
Wherein wet etch solution is alkalescence when (potassium hydroxide KOH), and its photoresistance must be with acid development photoresistance.
Make silicon wafer surface form one deck silicon nitride layer by silicon wafer substrate through the heating of nitrogen high temperature furnace, go up photoresistance again and cooperate the light shield exposure imaging, with reactive ion etching (RIE) silicon nitride layer in the district of developing is removed, after etch structure with wet etch method again with groove; Photoresistance and cooperate light shield to be provided with the electrode hole pattern to do exposure imaging on the back side of silicon wafer substrate at the relative position of groove, use reactive ion etching (RIE) that silicon nitride layer is removed again, respond to coupled plasma (ICP) with dry ecthing and produce the perforation electrode hole, make groove and perforation electrode hole inwall form a layer insulating through oxidation or nitrogen treatment silicon wafer substrate, after again with the silicon substrate metal cladding, utilize laser processing to be partitioned into the interior positive and negative electrode face of groove, place in the groove and and electrode engagement in order to LED crystal grain.
The LED luminescent grain is positioned in the silicon wafer substrate groove with groove reflection seat, and the positive and negative electrode of LED luminescent grain is connected the positive and negative electrode of silicon wafer substrate groove, utilize sealing resin-coating LED luminescent grain and fill up whole groove, make behind the sealing resin solidification through heating and cut into granular surface adhesion type light-emitting diode element.
Wherein the sealing resin is a kind of silica gel or epoxy resin (EPOXY) of transparent high temperature resistant
Wherein wafer substrate can be silicon wafer (Si) or silicon dioxide (SiO 2) wafer substrate.
Wherein the sealing resin makes its surface form the structure with convex lens function with the moulding of die casting mode.
Wherein in the single groove reflection seat of wafer substrate, can place simultaneously more than the two LEDs crystal grain.
Light-emitting diode (LED) silicon substrate manufacturing process following (A)
1. at first select the silicon wafer (6 cun) of 100 crystal orientations (Orientation) for use;
2. go up photoresistance and utilize the exposure imaging mode that the photoresistance of not wanting is removed;
3. utilize anisotropic wet etching (Anisotropic wet etching), etching reaches certain depth, promptly forms the groove (reflection seat) with 54.74 ° at inclination angle;
4. the silicon wafer back side makes the perforation electrode hole with dry ecthing or laser processing;
5. through oxidation or nitrogen treatment, make the surface form an insulating oxide silicon layer (SiO 2) or silicon nitride layer (Si 3N 4);
6. metal cladding (silver-plated, as to contain groove reflector and backplate layer);
7. utilize the electrode in laser (Nd-YAG) the processing dividing grooves to make formation positive and negative electrode face two ends.
Select potassium hydroxide mostly for use at the wet etching silicon materials especially in the silicon substrate etched recesses, when using alkaline hydrogen potassium oxide (KOH) etching, if then photoresistance can be by the corrosion of KOH institute, because of using special photoresistance liquid promptly with the acid photoresistance liquid (this kind photoresistance is difficult for having bought on the market) that develops to use general photoresistance.Then must use another processing procedure (B) instead if will reach the etching silicon substrate with general photoresistance.
Light-emitting diode (LED) silicon substrate manufacturing process (B):
1. use the silicon wafer of 100 crystal orientations;
2. sending the heating of nitrogen high temperature furnace earlier to makes silicon wafer surface form one deck silicon nitride layer (Si 3N 4);
3. go up photoresistance and exposure imaging;
4. use reactive ion etching (RIE) Si 3N 4Layer (claim not only hard mask) is removed (but also claiming to window);
5. utilize wet etch solution (KOH) to make and etch structure with groove;
6. photoresistance and exposure imaging on the silicon wafer back side;
7. use the RIE electric paste etching Si 3N 4Layer is removed;
8. do dry ecthing with induction coupled plasma (ICP) again and produce the perforation electrode hole;
9. make the surface of groove and perforation form an insulating film layer through oxidation or nitrogen treatment silicon wafer again;
10. electroplated metal layer;
11. utilize laser processing to cut out the interior positive and negative electrode face of groove.
The B processing procedure adopts general photoresistance with maximum different being in the B processing procedure of A processing procedure, and the A processing procedure adopts acid development photoresistance.The B processing procedure is long one deck Si earlier 3N 4Rete is again with RIE this layer of electric paste etching (speed of RIE etching silicon (Si) is very slow, must use the ICP etching silicon instead when dry ecthing silicon).
Above step is promptly finished the basic manufacturing method thereof of package specific silicon substrate of SMD light-emitting diode of the present invention, utilize its etch depth of wet etching mode and down non-perpendicular but form the groove at 54.74 ° at inclination angle at 100 crystal orientation silicon substrates, this angle just is well suited for the angle of departure of SMD LED.And the silicon substrate of selecting 110 crystal orientations for use utilizes its etch depth of wet etching is a vertical wall, and its formed groove also can be applicable to low-angle SMD LED element.
LED crystal grain (Chip) is solid brilliant in the silicon substrate groove and routing, put glue, cut into SMD type LED particle, and promptly finishing with the silicon wafer is the SMD type LED matrix of substrate.
Description of drawings
For the present invention there being further understanding, exemplify embodiment below, and cooperate illustrate as follows, wherein:
Fig. 1 is the encapsulating structure profile of conventional metals support rack type SMD light-emitting diode.
Fig. 2 is the encapsulating structure profile of traditional circuit template SMD light-emitting diode.
Fig. 3 is the silicon substrate profile of the encapsulation of light-emitting diode of the present invention.
Fig. 4 is the photoresist layer schematic diagram on the silicon substrate that is packaged in of light-emitting diode of the present invention.
Fig. 5 is the schematic diagram that is packaged in the part photoresistance exposure imaging on the silicon substrate of light-emitting diode of the present invention.
Fig. 6 is that being encapsulated in of light-emitting diode of the present invention is etched recesses shaped structures figure on the silicon substrate.
Fig. 7 removes the silicon substrate structure chart that formation behind the photoresistance has groove structure on the encapsulation silicon substrate of light-emitting diode of the present invention.
Fig. 8 is that the encapsulation of light-emitting diode of the present invention is done and dug or profile that perforation is handled.
Fig. 9 is the structure chart that long insulating barrier and metal cladding are done in the encapsulation of light-emitting diode of the present invention.
Figure 10 A is that the structure chart that metal level makes formation positive and negative electrode face is cut apart in the encapsulation of light-emitting diode of the present invention.
Figure 10 B is that the positive and negative electrode face diagram that metal level makes the formation chip bonding is cut apart in the encapsulation of light-emitting diode of the present invention.
Figure 11 is the structure chart of the solid crystalline substance of the packaged LED crystal grain of light-emitting diode of the present invention, routing, some sealing.
Figure 12 is that the encapsulation of light-emitting diode of the present invention utilizes LED crystal grain to cover the structure chart that crystal type engaged and put sealing.
Figure 13 is the encapsulation utilization point glue sealing of light-emitting diode of the present invention and cuts SMD type LED component structure figure.
Figure 14 is that the packaged LED crystal grain of light-emitting diode of the present invention forms SMD type LED component structure figure to cover crystal type.
Figure 15 is the encapsulation SMD type LED element backplate allocation plan of light-emitting diode of the present invention.
Figure 16 is the stereogram of SMD type LED element of the encapsulation chip bonding of light-emitting diode of the present invention.
Figure 17 is that the surperficial sealing of the encapsulation SMD type LED element of light-emitting diode of the present invention forms in the mold casting forming mode.
Figure 18 is that the encapsulation SMD type LED element surface sealing formation of light-emitting diode of the present invention has the structure of convex lens.
Figure 19 is that the encapsulation silicon substrate of light-emitting diode of the present invention adopts 110 crystal orientations through being etched into the structure chart of vertical wall groove.
Figure 20 is the encapsulating structure figure that can place plurality of LEDs crystal grain on the wafer substrate in the single groove reflection seat simultaneously that is encapsulated in of light-emitting diode of the present invention.
Embodiment
Fig. 1 is the structure chart of conventional metals support SMD type LED (being commonly called as the TOPLED type), its processing procedure is earlier with metallic support, with heatproof plastic rubber material (PPS) ejection formation one groove shape 2, actions such as solid more afterwards crystalline substance 3, routing 4, sealing 5, its main encapsulating material is plastic cement and epoxy resin (EPOXY).
Fig. 2 is the structure chart of traditional circuit-board SMD type LED, its processing procedure for earlier be fixed in LED crystal grain on the substrate 6 and beat electrode wires 4 after form sealing 5 with the mold casting forming mode again, after again through cutting into the element of granular SMD type LED, its main encapsulating material is transparent epoxy resin.
The encapsulation of light-emitting diode of the present invention sees also shown in Figure 3, at first at silicon wafer substrate 8 last layer photoresist layers 9 (as shown in Figure 4), utilize the exposure imaging mode that the photoresistance in exposure imaging district 10 is removed (as shown in Figure 5), after silicon wafer is formed groove through etching solution (KOH) etching, because silicon wafer 8 adopts the structure of 100 crystal orientations, the groove that cause etches is the inclined wall 12 at 54.74 ° at a tool inclination angle, this inclined wall helps reflection of light, and Fig. 7 forms the silicon substrate structure chart with groove structure after removing photoresistance.Fig. 8 is with photoresistance on the back side of silicon substrate 8 and is provided with development electrode perforation pattern in the back side of groove relative position light shield, utilize exposure imaging and dry ecthing (RIE or ICP) to do borehole (half perforation) 13, do guiding electrode 14 (as Fig. 8) simultaneously, half perforation, 13 main purposes are for when doing the cutting of SMD element particle, line of cut was directly cut from the central authorities of half perforation 13, respectively it has structure such as Figure 10 (A) and shown in Figure 16 of semicircle to make the two-end-point that forms SMD type LED element, is doing welding effect in order to SMD type LED element with the pad of other circuit board lines owing to can be coated with metal level at the semicircle inwall.
It act as the effect of lead electrode electrode perforation 14 in Fig. 8 silicon substrate.
Behind the board structure of finishing silicon substrate, because therefore silicon substrate originally must form one deck good insulation performance rete as semiconductor on its surface, insulating film layer can be the silicon (SiO that gasifies at present 2) or silicon nitride (Si 3N 4), as long as pass in the high temperature furnace oxygen or nitrogen can form the surface insulating barrier as Fig. 9 15 shown in, after having grown insulating barrier 15, must plate metal level 16 again.Because metal level 16 must will be plated to silicon wafer positive and negative and perforation entirely, preferably once can all finish with plating mode, also can form back metal electrode 18,17 simultaneously; And the metal electrode in the groove of front is difficult to form with the exposure imaging mode, must cut the formation positive and negative electrode face that make with laser (Nd-YAG) processing, electrode surface 17A and 18A as shown in figure 10, and cut-off rule 19 is an insulation layer; Figure 10 (A) is that traditional LED crystal grain must be used the routing connection electrode, and Figure 10 (B) is at the distribution of electrodes figure that covers crystalline substance (FlipChip) type LED crystal grain.At its base materials of LED crystal grain such as the blue light of gallium nitride, green glows is transparent alumina single crystal, if adopt chip package add the fluted reflection seat of the present invention then its luminosity will double above than conventional package structure.
Figure 11 is cut apart 20 at silicon substrate at last and is made the SMD type LED element that cutting promptly forms Figure 13 for LED crystal grain 3 on the electrode surface 18A, is done simultaneously and beaten metal wire 4 connection electrode 17A and put sealing resin 5 in the groove that places silicon substrate.Figure 12 and Figure 14 are the structure of LED chip package, directly LED crystal grain reverse side are made contact 21 directly heat seam on 17A and 18A electrode surface, put sealing resin 5 again, and cutting SMD type LED, and Figure 10 and Figure 13 are the encapsulation of selecting traditional LED crystal grain for use.
Figure 15 is the element backplate allocation plan of the encapsulation SMD type LED of light-emitting diode of the present invention.Electrode 17,18 must be connected conducting with electrode 17A, 18A in perforation electrode 14 and the groove overleaf, because the structure of the present invention's design can form bigger backplate face in order to connect perforation electrode 14, might form the positive and negative electrode short circuit phenomenon when the weld job easily to the SMD element, for avoiding 17,18 liang of electrode surfaces too approaching, therefore must stamp a layer insulating (lacquer) 22 more thereon as shown in figure 15.
Figure 16 is the encapsulation of light-emitting diode of the present invention SMD type LED element stereogram with chip bonding, and its encapsulation base material 8 is a silicon substrate entirely, and unconventional epoxy resin.
Figure 17 adopts the mold casting forming mode for the encapsulation SMD type LED element surface sealing of light-emitting diode of the present invention, and only front surface has sealing 5, and its encapsulation base material 8 is a silicon substrate entirely.To adopt its advantage of glue mode be that processing procedure is simple to sealing major part in the silicon substrate groove before this, must not use mould, but sometimes for the structure 23 that makes SMD element thickening and have a convex lens shape at the SMD surface forming as shown in figure 18, then can adopt surface die casting method sealing.
Illustrate that by above embodiment the present invention is directly fixed on LED crystal particle (GaAs, GaN, SiC etc.) on the reeded silicon wafer substrate, silicon wafer substrate itself is exactly a LED encapsulation base material, and traditional SMD type LED encapsulating material is generally the epoxy resin series products, it is easy that comparatively speaking the present invention and traditional approach had a microminiaturization, thermal diffusivity is good, luminosity is strong, advantages such as thermal endurance.
Above-described embodiment is based on silicon single crystal wafer 100 crystal orientations, if change the wafer that adopts crystal orientation 110, through wet etching come out be vertical wall groove as shown in figure 19, but this kind groove also can be used on the less SMD LED element of lighting angle.
Figure 20 has the effect of high brightness for make the structure that can place plurality of LEDs crystal grain on same groove to obtain single SMD LED element.
In addition the present invention is if use other single-chips instead without the silicon wafer single-chip such as the silicon dioxide monocrystalline is commonly called as single crystal quartz (SiO 2) also can get reeded structure through etching, but its inclined wall angle is just different with silicon, must obtain different results according to using side crystal orientation.

Claims (15)

1.一种发光二极管的封装，其特征在于，基板的制作方法为：1. A package of light-emitting diodes, characterized in that the method of making the substrate is: 以硅晶片为基板，在其正面上光阻层经曝光显影后利用湿蚀刻方式蚀刻出具有倾斜壁的凹槽反射座，另在硅晶片基板的背面同样上光阻层并在凹槽底部背面的相对位置设有电极孔图案经曝光显影后利用干蚀刻方式蚀刻出贯孔电极孔，去除光阻，将硅晶片基板经高温炉氧化或氮化处理使硅基板表面形成一层氧化硅或氮化硅的绝缘层，利用电镀方式使硅基板正、反面及贯孔电极孔内均镀一层金属导电层，并用激光加工将凹槽内的电极面分割成具有正、负电极的电极接触面，以利发光二极管的发光晶粒置于其中并与电极接合。Using a silicon wafer as the substrate, the photoresist layer on the front side is exposed and developed, and then wet etching is used to etch out a groove reflection seat with inclined walls. The relative position is provided with an electrode hole pattern. After exposure and development, the through-hole electrode hole is etched out by dry etching, and the photoresist is removed. The silicon wafer substrate is oxidized or nitrided in a high-temperature furnace to form a layer of silicon oxide or nitrogen on the surface of the silicon substrate. Insulating layer of silicon, use electroplating method to plate a layer of metal conductive layer on the front and back of the silicon substrate and the hole of the through-hole electrode, and use laser processing to divide the electrode surface in the groove into electrode contact surfaces with positive and negative electrodes , so that the light-emitting grains of the light-emitting diode are placed in it and bonded with the electrodes. 2.如权利要求1所述的一种发光二极管的封装，其特征在于，其中镀金属导电层须同时具有导电与光反射功能，其材料为银、金、钯、铂等。2. A light-emitting diode package as claimed in claim 1, wherein the metal-plated conductive layer must have both conductive and light-reflecting functions, and its material is silver, gold, palladium, platinum and the like. 3.如权利要求1所述的一种发光二极管的封装，其特征在于，其中硅晶片基板选用100结晶方位的硅晶片能蚀刻出倾斜壁的凹槽。3 . The LED package according to claim 1 , wherein the silicon wafer substrate is a silicon wafer with a crystal orientation of 100, which can etch grooves with inclined walls. 4 . 4.如权利要求1所述的一种发光二极管的封装，其特征在于，其中硅晶片基板选用110结晶方位的硅晶片能蚀刻出具垂直壁的凹槽。4 . The LED package according to claim 1 , wherein the silicon wafer substrate is a silicon wafer with a crystal orientation of 110, which can etch grooves with vertical walls. 5.如权利要求1所述的一种发光二极管的封装，其特征在于，其中湿蚀刻液为碱性(氢氧化钾)时，其光阻须用酸性显影光阻。5. A light-emitting diode package as claimed in claim 1, wherein when the wet etching solution is alkaline (potassium hydroxide), the photoresist must be developed with acid. 6.一种发光二极管的封装，其特征在于，硅晶片基板经氮气高温炉加热使硅晶片表面形成一层氮化硅层，再上光阻并配合光罩曝光显影，用反应性离子蚀刻把显影区的氮化硅层去除，后再用湿蚀刻法蚀刻出具有凹槽的结构；在硅晶片基板的背面上光阻并配合光罩在凹槽的相对位置设有电极孔图做曝光显影，再用反应性离子蚀刻把氮化硅层去除，用干蚀刻感应耦合电浆制作出贯孔电极孔，将硅晶片基板经氧化或氮化处理使凹槽及贯孔电极孔内壁形成一层绝缘层，再将硅基板镀金属层，利用激光加工分割出凹槽内的正、负电极面，以利发光二极管晶粒置于凹槽内并与电极接合。6. A package of light-emitting diodes, characterized in that the silicon wafer substrate is heated by a nitrogen high-temperature furnace to form a silicon nitride layer on the surface of the silicon wafer, and then a photoresist is applied and is exposed and developed in cooperation with a photomask, and the silicon wafer is exposed and developed by reactive ion etching. The silicon nitride layer in the development area is removed, and then wet etching is used to etch out a structure with grooves; on the back of the silicon wafer substrate, a photoresist and a photomask are provided at the relative position of the groove for exposure and development. , and then use reactive ion etching to remove the silicon nitride layer, use dry etching inductively coupled plasma to make through-hole electrode holes, and oxidize or nitride the silicon wafer substrate to make the groove and the inner wall of the through-hole electrode hole form a layer Insulation layer, and then the silicon substrate is plated with a metal layer, and the positive and negative electrode surfaces in the groove are divided by laser processing, so that the light-emitting diode crystal grains are placed in the groove and bonded with the electrode. 7.如权利要求6所述的发光二极管的封装，其特征在于，其中硅晶片基板选用100结晶方位可蚀刻出具倾斜壁的凹槽结构。7 . The package of the light emitting diode as claimed in claim 6 , wherein the silicon wafer substrate adopts a crystal orientation of 100 to etch a groove structure with inclined walls. 8 . 8.如权利要求6所述的发光二极管的封装基板的制作方法，其特征在于，其中硅晶片基板选用110结晶方位能蚀刻出具垂直壁的凹槽结构。8 . The method for manufacturing a package substrate of a light emitting diode as claimed in claim 6 , wherein the silicon wafer substrate is selected to have a 110 crystal orientation and a groove structure with vertical walls can be etched. 9.一种发光二极管的封装，其特征在于，将发光二极管发光晶粒放置于具有凹槽反射座的硅晶片基板凹槽内，并将发光二极管发光晶粒的正、负电极连接硅晶片基板凹槽的正、负电极，利用封胶树脂包覆发光二极管发光晶粒且填满整个凹槽，经加温使封胶树脂固化后并切割成颗粒状的表面粘著型发光二极管元件。9. A package of light-emitting diodes, characterized in that the light-emitting diode light-emitting crystal grains are placed in the groove of the silicon wafer substrate with a groove reflector, and the positive and negative electrodes of the light-emitting diode light-emitting crystal grains are connected to the silicon wafer substrate For the positive and negative electrodes of the grooves, the sealing resin is used to cover the light-emitting crystal grains of the light-emitting diode and fill the entire groove, and the sealing resin is cured by heating and cut into granular surface-mounted light-emitting diode elements. 10.如权利要求9所述的发光二极管的封装，其特征在于，其中封胶树脂为一种透明耐高温的硅胶或环氧树脂。10 . The LED package according to claim 9 , wherein the sealing resin is a transparent high temperature resistant silicone or epoxy resin. 11 . 11.一种发光二极管的封装，由晶片基板、发光二极管发光晶粒，封装树脂等所组成，其中：11. A light-emitting diode package, which is composed of a chip substrate, light-emitting diode light-emitting grains, packaging resin, etc., wherein: 发光二极管发光晶粒：具有正、负电极面的发光晶粒；Light-emitting diode light-emitting grains: light-emitting grains with positive and negative electrode surfaces; 晶片基材：具有凹槽反射座、放置发光二极管发光晶粒，并具有连接发光二极管发光晶粒的正、负电极面；Wafer substrate: has a groove reflective seat, places light-emitting diode light-emitting grains, and has positive and negative electrode surfaces connected to light-emitting diode light-emitting grains; 封胶树脂：包覆发光二极管发光晶粒并填满晶片基板整个凹槽；Sealant resin: cover the LED light-emitting crystal and fill the entire groove of the chip substrate; 其特征者在于：将发光二极管发光晶粒置放于具有凹槽反射座的晶片基板凹槽内，并连接其正、负电极，再以点胶或模铸成型方式使封胶树脂填满整个凹槽，再切割成粘着型发光二极管。It is characterized in that: placing light-emitting diode light-emitting crystals in the groove of the wafer substrate with a groove reflective seat, and connecting its positive and negative electrodes, and then filling the entire surface with sealing resin by dispensing or molding. Grooves, and then cut into adhesive LEDs. 12.如权利要求11所述的发光二极管的封装，其特征在于，其中晶片基板可为硅晶片或二氧化硅晶片基板。12 . The LED package as claimed in claim 11 , wherein the wafer substrate is a silicon wafer or a silicon dioxide wafer substrate. 13 . 13.如权利要求11或12所述的发光二极管的封闭，其特征在于，晶片基板选用其不同晶格方位则可蚀刻出不同倾斜角的凹槽。13. The enclosure of the light-emitting diode according to claim 11 or 12, wherein the wafer substrate can be etched with grooves with different inclination angles by selecting different crystal lattice orientations. 14.如权利要求11所述的发光二极管的封装，其特征在于，其中封胶树脂以模铸方式成型使其表面形成具有凸透镜功能的结构。14 . The LED package as claimed in claim 11 , wherein the sealing resin is molded so that its surface forms a structure with a convex lens function. 15 . 15.如权利要求11所述的发光二极管的封装，其特征在于，其中在晶片基板的单一凹槽反射座内可同时放置二颗以上发光二极管晶粒。15 . The LED package as claimed in claim 11 , wherein more than two LED dies can be placed in a single groove reflective seat of the chip substrate at the same time. 16 .
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