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CN1348018A - Direct double-ion beam diamond-like film depositing process - Google Patents

Direct double-ion beam diamond-like film depositing process Download PDF

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CN1348018A
CN1348018A CN 01128592 CN01128592A CN1348018A CN 1348018 A CN1348018 A CN 1348018A CN 01128592 CN01128592 CN 01128592 CN 01128592 A CN01128592 A CN 01128592A CN 1348018 A CN1348018 A CN 1348018A
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diamond
ion beam
film
energy
carbon
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CN1172019C (en
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周灵平
朱启良
李绍禄
过骐千
林美娟
黄桂芳
王锦辉
李德意
厉学文
靳九成
吴玉珍
唐应时
白玉兰
汪亮明
李夏平
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Hunan University
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Hunan University
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Abstract

一种双离子束直接沉积类金刚石膜的工艺,其特征在于用双离子束轰击制作混合界面,低能离子束直接沉积类金刚石膜;用低能含碳离子束直接沉积类金刚石膜层,同时用中能Ar+离子束轰击膜层,将碳离子注入到基体表层足够的深度,以混合膜基原子形成能显著提高膜粘结强度的模糊界面,在此过程中两离子束束流进行交替变化,界面混合一定时间后,停止中能离子束轰击,低能含碳离子束继续直接沉积类金刚石膜。本发明通过增加碳注入衬底表层的深度和降低膜应力而增强类金刚石膜的粘结强度,其操作简便,膜质量稳定,能适应工业化生产,应用前景十分广阔。

Figure 01128592

A process for directly depositing a diamond-like carbon film with dual ion beams, characterized in that a mixed interface is made by bombarding with dual ion beams, a low-energy ion beam directly deposits a diamond-like carbon film; a low-energy carbon-containing ion beam is used to directly deposit a diamond-like carbon film layer, and at the same time The Ar + ion beam bombards the film layer, implants carbon ions to a sufficient depth on the surface of the substrate, and forms a fuzzy interface that can significantly improve the bonding strength of the film by mixing the film-based atoms. During this process, the currents of the two ion beams change alternately. After the interface was mixed for a certain period of time, the medium-energy ion beam bombardment was stopped, and the low-energy carbon-containing ion beam continued to directly deposit the diamond-like film. The invention enhances the bonding strength of the diamond-like film by increasing the depth of carbon injection into the surface layer of the substrate and reducing the stress of the film. The method is easy to operate, stable in film quality, adaptable to industrial production, and has broad application prospects.

Figure 01128592

Description

The technology of direct double-ion beam diamond-like film depositing
Technical field: the present invention relates to the synthesis technique of diamond-film-like, especially carry the technology of the synthetic diamond-film-like of energy ionic fluid.
Prior art: excellent properties such as quasi-diamond (DLC) has the hardness height, frictional coefficient is low, thermal conductivity good, chemical stability is good, and depositing temperature lower (<300 ℃), depositional area is big, and face is smooth smooth, is the desired coating material of material surface modifying.At present the processing method of synthetic diamond-film-like can be divided into generally carry can the ion bombardment assistant depositing and no-load can the ion bombardment assistant depositing, wherein carry can the synthetic diamond-film-like of ionic fluid typical process mainly contain ion beam assisted depositing (IBAD) and ionic fluid directly deposits (IBD).Ion beam assisted depositing (IBAD) quasi-diamond membrane technique is a plated film under the Assisted by Ion Beam bombardment, and its plated film mode mainly contains two kinds at present: a kind of is to adopt electron gun evaporation solid carbon source plated film; Another kind is to adopt ion beam sputtering graphite target plated film (to be referred to as double ion beam sputtered deposition, DIBS).Although ion beam assisted deposition can improve the diamond-film-like cohesive strength than other deposition method, but make it to adapt to work under the strong friction condition, also has certain difficulty, it is mainly from two aspects, the one, it is bigger that existing ion beam assisted depositing typical process method prepares the diamond-film-like difficulty, because graphite has laminate structure, when sputter or evaporation, form sheet macrobead (atomic group) easily, under the Assisted by Ion Beam bombardment, if processing condition are improper, the C-C bond structure is difficult to change, and causes the synthetic carbon film second-rate, and its technology is difficult to adapt to industrial requirement; On the other hand, when combining, workpiece such as the diamond-film-like of high rigidity and iron and steel have very big stress, this stress is subjected to the influence of film synthesis technique and organization structure of film, become the major cause that causes the diamond-film-like cohesive strength to weaken, experimental study shows, for avoiding the Effect on Performance such as frictional wear of stress to diamond-film-like, the optimum thickness that the diamond-film-like of ion beam assisted depositing preparation is used for surface modification only is 0.5 μ m, in the Service Environment of the mechanical engineering wear part that this restriction makes diamond-film-like be difficult to be applied in to bear galling load.And ionic fluid directly deposits the technology that (IBD) diamond-film-like is to use the direct depositing carbon film of carbon containing gaseous ion bundle with certain energy, the synthetic film quality is high and stablize, in the direct deposition process of ionic fluid, ionic fluid also bombarded the rete of having grown in the sedimentary while, but the effect that its bombardment is injected is relatively poor, and cohesive strength is lower than the ion beam assisted depositing film.
Summary of the invention: the purpose of this invention is to provide and a kind ofly can significantly improve diamond-film-like cohesive strength and quality stability, satisfy the strong friction of machinery job requirement, simplify processing condition, adapt to the technology of the direct double-ion beam diamond-like film depositing of suitability for industrialized production requirement.
Technical scheme of the present invention is: make mixed interface, the direct diamond-film-like deposition of low energy ion beam with the double-ion beam bombardment.It is described that to be used for bombarding the double-ion beam of making mixed interface be that low energy contains carbon ion beam and can Ar +Ionic fluid, the described low energy ion beam that is used for direct diamond-film-like deposition is that low energy contains carbon ion beam.
Of the present invention being further characterized in that with the direct diamond-film-like deposition layer of low energy ion beam can Ar in using simultaneously +The ion beam bombardment rete.
The present invention adopts the low energy of 200~1000eV to contain the direct diamond-film-like deposition layer of carbon ion beam, uses the middle energy Ar of 20k~35keV simultaneously +The ion beam bombardment rete, carbon ion is injected into the enough degree of depth in matrix top layer, form the vague interface that can significantly improve the film cohesive strength with hybrid films base atom, two ion beam streams replace variation in this process, behind the interface mixing certain hour, and energy ion beam bombardment in stopping, low energy contains carbon ion beam and continues direct diamond-film-like deposition, kept the continuity of interface mixing and coating process, easy and simple to handle, the diamond-film-like steady quality.
Double-ion beam bombardment hybrid technology is a kind of ion beaming auxiliary filming process, also is a kind of dynamic recoil ion injection process.Carry and to pass through middle energy Ar by carbon ion +Auxiliary bombardment, because irradiation quickens diffusion and ion energy exchange interaction, make carbon ion inject degree of depth increase, inject mixing of carbon ion and underlayer surface atom simultaneously, composition, weave construction and the lattice match at interface are changed, thus release membranes base interfacial stress.Therefore, double-ion beam bombardment hybrid technology is injected the degree of depth of underlayer surface and is reduced the cohesive strength that membrane stress strengthens diamond-film-like by increasing carbon.
Concrete technology of the present invention is:
200~????????200~????????200~????????200~????????200~????????200~
200~low energy CH n +1000eV/25~1000eV/10~1000eV/25~1000eV/10~1000eV/25~1000eV/10~
1000eV/25~40mA
40mA?????????20mA?????????40mA?????????20mA?????????40mA?????????20mA
20~20~20~20~20~20~middle energy Ar +0
Carry out interface mixed deposit diamond-film-like in the time of 35keV/1mA 35keV/2mA 35keV/1mA 35keV/2mA 35keV/1mA 35keV/2mA time (min) 10 10 10 10 10 10 60~300 function diamond-film-like depositions
Technical process of the present invention is: earlier substrate surface is polished pre-treatment such as polishing, cleaning drying, with the big line Ar of low energy +Ion beam bombardment cleans pending workpiece surface, contains the direct diamond-film-like deposition layer of carbon ion beam with low energy, can Ar in using simultaneously +The ion beam bombardment rete, behind the certain hour, can Ar in stopping +Ion beam bombardment continues to contain the direct diamond-film-like deposition of carbon ion beam with low energy; At last rete is carried out performance test, whole technological process is finished, and workpiece can be applicable to produce.
The present invention can carry out the coating modified processing of diamond-film-like to comprising many material surfaces such as iron and steel, Wimet.Before diamond-film-like deposition, must polish pre-treatment such as polishing, cleaning drying to substrate surface; Implement equipment of the present invention and be ion beam assisted depositing (IBAD) equipment commonly used, base vacuum is 5 * 10 -5Pa, operating air pressure (1~2) * 10 -2Pa, high-purity CH is adopted in the low energy ion source 4As source of the gas, produce low energy CH n +Ionic fluid, middle energy ion source adopts high-purity Ar make source of the gas, can Ar in the generation +Ionic fluid; In order to guarantee that all even underlayer temperature of plated film is lower than 150 ℃, sample table adopts water-cooled and rotation.
Implement used ion beam assisted depositing (IBAD) equipment of the present invention, generally be equipped with three ion sources, each ion source effect such as following table:
Ion source Energy region (eV) Line (mA) Effect The effect in the embodiment of this invention of each ion source
The working gas effect
Can the bombardment source in the sputtering source low energy bombardment source ??0~4k ??50~1500 ??0~40k ?0~150 ?10~120 ?0~5 Pending workpiece surface is cleaned in the bombardment of sputter solid target plated film, or bombardment rete, or the direct plated film bombardment of ionic fluid rete Without Ar bombardment cleaning workpiece surface C H4 plated film Ar bombardment rete
According to last table, the present invention also can implement on specific equipment, and promptly specific equipment only need be equipped with two ion sources, and a low energy ion source is used for diamond-film-like deposition; Can be used to bombard rete by ion source in one, carbon ion is injected into the enough degree of depth in matrix top layer, form the vague interface that can significantly improve the film cohesive strength with hybrid films base atom.
Because the synthetic diamond-film-like of the present invention is finished at normal temperatures, so diamond-like coating can in officely be what is the need for and used on antifriction, wear-resisting, the anti-corrosion workpiece.But the application of diamond-film-like is restricted by two aspect factors, the one, the cohesive strength of film, the 2nd, cost factor, direct double-ion beam diamond-like film depositing is as a kind of new and high technology, be not suitable on common workpiece, using the first-selected aircraft bearing of its machine applications scope, the easy abrasive key components and parts of automobile (as piston and piston ring, tappet rod for valve and conduit, driving gear etc.), turbine blade and precision sizing cutter etc.The annual global consumption of these component is very big, is operated in mostly under the work condition environments such as frictional wear, corrosion, and some also is operated under the DRY SLIDING, and diamond-film-like is worked under this class working condition and had the superiority that can not be substituted.
Major advantage of the present invention is:
(1), adopts double-ion beam bombardment hybrid technology, carbon ion injects the underlayer surface degree of depth and can reach more than the 200nm, tens nanometers and direct sedimentary tens nanometers of ionic fluid much larger than ion beam assisted depositing, simultaneously because the interface mixing effect, slowly-releasing the quasi-diamond membrane stress, thereby significantly improve the diamond-film-like cohesive strength.Scratch test shows that film peels off critical load greater than 50N, even exceeds the test limits (100N) of instrument, greater than the result of ion beam assisted depositing;
(2), because carbon injects the enough degree of depth in matrix top layer, improved matrix hardness, the brute force of shape pair of films supports, thereby improves the diamond-film-like composite hardness, film microhardness HV can reach 25~35GPa, is better than the 18~35GPa and the direct sedimentary 20~30GPa of ionic fluid of ion beam assisted depositing;
(3), owing to directly adopt CH n +Diamond-film-like deposition, its technological operation is easy, and film quality is stable, can adapt to suitability for industrialized production;
(4), except that mixed interface, the diamond-film-like deposition process is only used a low energy ion source, adopts two ion sources to compare with conventional ion bundle assistant depositing process deposits diamond-film-like always, can reduce production costs.
Three kinds of technologies comprehensively be compared as follows table: main economic and technical indices ion beam assisted depositing of the present invention (twoly directly deposits from ionic fluid
Sub-beam sputtering deposition) the stable unstable low height of the higher higher cost of the general good deposition efficiency of good reproducibility of stablizing of the high height of big diamond-film-like adhesion strength HV (40Cr substrate, ballast 0.15N) 25~356Pa, 18~35GPa, 20~30GPa diamond-film-like quality stability during the tens of nanometer tens nanometer stress of the hundreds of nanometers of mixed interface layer depth are little
Description of drawings: Fig. 1 is a process flow sheet of the present invention.
Embodiment: as shown in Figure 1, technical process of the present invention is:
(1) substrate pre-treatment: substrate surface is polished pre-treatment such as polishing, cleaning drying;
(2) the substrate surface ion beam bombardment cleans: with the big line Ar of low energy +Ion beam bombardment cleans pending workpiece surface;
(3) mixed interface is made in the double-ion beam bombardment: contain the direct diamond-film-like deposition layer of carbon ion beam with low energy, and can Ar in using simultaneously +The ion beam bombardment rete.
(4) can stop bombardment, the direct diamond-film-like deposition of low energy ion beam by ionic fluid in: can Ar in stopping +Ion beam bombardment continues to contain the direct diamond-film-like deposition of carbon ion beam with low energy;
(5) detect, use: rete is carried out performance test, and workpiece is applied to produce.
Embodiment one, diamond-film-like coated cutting tool are made
Technical process: (grind blade on request, corner radius is 1.2mm) → acetone ultrasonic cleaning → dry → pack into (sample table adopts water-cooled and rotation) on the sample table in the ion beam assisted depositing vacuum installation → with 1000eV, 100mA energy Ar ground → put the first edge on a knife or a pair of scissors in the polishing of commercially available Wimet YG6 cutter (the cutter model is C116) → tool surface +Mixed interface (concrete technology sees the following form) → energy ion beam bombardment in stopping to be made in ion beam bombardment cleaning tool surface 20min → double-ion beam bombardment, continues to use low energy CH n +Ionic fluid (energy 350eV, line 25mA) is 5 hours → low energy CH on probation of diamond-film-like deposition directly n +Can Ar among the 350eV/25mA 350eV/10mA 350eV/25mA 350eV/10mA 350eV/25mA 350eV/10mA +30keV/1mA 30keV/2mA 30keV/1mA 30keV/2mA 30keV/1mA 30keV/2mA time (min) 10 10 10 10 10 10
Effect: make successfully one the diamond-film-like coated cutting tool, on certain factory's numerical control " soft profile modeling " profiling machine, carried out turning 6105Q-1C outside piston application test, the cutting workpiece material is ZL109 (aluminium alloy that contains Si11~13%), the piston outside diameter nominal size is Φ 105mm, the lathe rotating speed is 1500r/min, depth of cut is 0.15~0.20mm, interrupted DRY CUTTING.The piston face roughness of test cutter processing and size, form accuracy all meet processing request, and machining piston is 4500 altogether.Because developing of automobile industry, piston face quality and dimensional precision and form accuracy require to improve, surface roughness Ra≤1.6 μ m, dimensional precision ± 0.01mm, the processing profile of 6105Q-1C outside piston is that convexity becomes ellipse profile, and inserted tool is big, easy to wear owing to resistance to cutting, thereby the incompatibility high speed cutting, and the life-span is low and can not guarantee working accuracy, so inserted tool has not been suitable for such outside piston of processing.Behind diamond-film-like deposition on the inserted tool, because wear-resisting, the antifriction function of quasi-diamond, its resistance to cutting descends, and wear rate reduces in the working angles, thereby can guarantee the size and dimension precision of cutting workpiece.On this angle, can the meaning that apply diamond-film-like on inserted tool be not only the raising in life-span, and be its problem that process the high quality piston.Less demanding and processing profile be the piston of just justifying but for some surface quality, still can adopt Wimet processing at present, but it is every just round 1500~2000 in the piston (piston material is ZL109) of cutter processing excircles, the cutter of the turning piston that present factory generally adopts is polycrystal diamond cutter (PCD), whenever, can process 6000~8000 in 6105Q-1C piston to cutter (adopt Great Britain and America imported materials and items make), the price comparison height of palette knife, be about 200~400 yuan/, be 3~5 times of diamond-like coating cutter.
Embodiment two, 40Cr steel surface diamond-film-like is coating modified
Technical process: the cylinder sample of quench, tempering 40Cr steel → cut into diameter 24mm, high 7.8mm several → end face polishes polishing → acetone ultrasonic cleaning → dry → pack into (sample table adopts water-cooled and rotation) on the sample table in the ion beam assisted depositing vacuum installation → with 1000eV, 60mA energy Ar +Mixed interface (concrete technology sees the following form) → energy ion beam bombardment in stopping to be made in the surperficial 10min of ion beam bombardment washed samples → double-ion beam bombardment, continues to use low energy CH n +Ionic fluid (energy 400eV, line 25mA) is 3 hours → performance test of diamond-film-like deposition low energy CH directly n +Can Ar among the 400eV/25mA 400eV/10mA 400eV/25mA 400eV/10mA 400eV/25mA 400eV/10mA +25keV/1mA 25keV/2mA 25keV/1mA 25keV/2mA 25keV/1mA 25keV/2mA time (min) 10 10 10 10 10 10
The performance test results:
(1) microhardness HV is 29.93Gpa (2993kg/mm 2) (test condition: ballast 15g, hold time 20s);
(2) film cohesive strength height, scratch test show that film peels off critical load greater than 100N (test limits that exceeds instrument);
(3) friction-wear test shows, diamond-film-like coating abrasion amount is 1/274 of a 40Cr steel matrix, and the Index A of resistance to wearing WN is 1.52 times of 40Cr steel matrix;
Embodiment three, 2Cr13 stainless steel surface diamond-film-like are coating modified
Technical process: the cylinder sample of 2Cr13 stainless steel → cut into diameter 20mm, high 10mm several → end face polishes polishing → acetone ultrasonic cleaning → dry → pack into (sample table adopts water-cooled and rotation) on the sample table in the ion beam assisted depositing vacuum installation → with 1000eV, 60mA energy Ar +Mixed interface (concrete technology sees the following form) → energy ion beam bombardment in stopping to be made in the surperficial 10min of ion beam bombardment washed samples → double-ion beam bombardment, continues to use low energy CH n +Ionic fluid (energy 350eV, line 25mA) is 2 hours → corrosion resisting property of diamond-film-like deposition test low energy CH directly n +Can Ar among the 350eV/25mA 350eV/10mA 350eV/25mA 350eV/10mA 350eV/25mA 350eV/10mA +25keV/1mA 25keV/2mA 25keV/1mA 25keV/2mA 25keV/1mA 25kV/2mA time (min) 10 10 10 10 10 10
The corrosion resisting property test result: sample soaked 14 hours in 3.5%NaCl solution, and zero-G test shows that corrosion speed is 0.004g/m 2H is far below the corrosion speed 0.51g/m of matrix 2H.

Claims (6)

1、一种双离子束直接沉积类金刚石膜的工艺,其特征在于用双离子束轰击制作混合界面,低能离子束直接沉积类金刚石膜。1. A process for directly depositing a diamond-like carbon film by dual ion beams, characterized in that a mixed interface is made by bombarding with dual ion beams, and a low-energy ion beam directly deposits a diamond-like carbon film. 2、根据权利要求1所述的双离子束直接沉积类金刚石膜的工艺,其特征在于所述的用于轰击制作混合界面的双离子束为低能含碳离子束和中能Ar+离子束,所述的用于直接沉积类金刚石膜的低能离子束为低能含碳离子束。2. The process for directly depositing a diamond-like carbon film with dual ion beams according to claim 1, wherein the dual ion beams used to bombard and make the mixed interface are low-energy carbon-containing ion beams and medium-energy Ar + ion beams, The low-energy ion beam used for directly depositing the diamond-like film is a low-energy carbon-containing ion beam. 3、根据权利要求1所述的双离子束直接沉积类金刚石膜的工艺,其特征在于用低能含碳离子束直接沉积类金刚石膜层,同时用中能Ar+离子束轰击膜层。3. The process for directly depositing a diamond-like carbon film by dual ion beams according to claim 1, characterized in that the diamond-like carbon film is directly deposited with a low-energy carbon-containing ion beam, and the film is bombarded with a medium-energy Ar + ion beam. 4、根据权利要求1所述的双离子束直接沉积类金刚石膜的工艺,其特征在于采用200~1000eV的低能含碳离子束直接沉积类金刚石膜层,同时用20k~35keV的中能Ar+离子束轰击膜层,在此过程中两离子束束流进行交替变化,界面混合一定时间后,停止中能Ar+离子束轰击,低能含碳离子束继续直接沉积类金刚石膜。4. The process for directly depositing a diamond-like carbon film by dual ion beams according to claim 1, characterized in that a low-energy carbon-containing ion beam of 200-1000 eV is used to directly deposit a diamond-like carbon film layer, and at the same time, a medium-energy Ar + of 20k-35keV is used The ion beam bombards the film layer, and the two ion beam currents alternately change during this process. After the interface is mixed for a certain period of time, the medium-energy Ar + ion beam bombardment is stopped, and the low-energy carbon-containing ion beam continues to directly deposit the diamond-like film. 5、根据权利要求1所述的双离子束直接沉积类金刚石膜的工艺,其特征在于其具体工艺为:5. The process for directly depositing a diamond-like carbon film by dual ion beams according to claim 1, characterized in that its specific process is:       200~          200~          200~          200~          200~         200~          200~低能CHn +1000eV/25~    1000eV/10~    1000eV/25~    1000eV/10~    1000eV/25~   1000eV/10~    1000eV/25~200~ 200~ 200~ 200~ 200~ 200~ 200~ Low energy CH n + 1000eV/25~ 1000eV/10~ 1000eV/25~ 1000eV/10~ 1000eV/25~ 1000eV/10~ 1000eV/25~       40mA           20mA           40mA           20mA           40mA          20mA           40mA中能Ar+ 20~35keV/1mA  20~35keV/2mA  20~35keV/1mA  20~35keV/2mA  20~35keV/1mA  20~35keV/2mA    0时间(min) 10             10             10             10             10            10             60~30040mA 20mA 40mA 20mA 40mA 20mA 40mA medium energy Ar + 20~35keV/1mA 20~35keV/2mA 20~35keV/1mA 20~35keV/2mA 20~35keV/1mA 20~35keV/2mA 0 time (min) 10 10 10 10 10 10 60~300                                                                                                沉积类金刚功能                            沉积类金刚石膜的同时进行界面混合Simultaneous Deposition of Diamond-like Films at the Hybrid Interface by Depositing Diamond-like Films                                                                                                石膜Stone Membrane 6、根据权利要求1或2或3或4或5所述的双离子束直接沉积类金刚石膜的工艺,其特征在于其工艺流程为:6. The process for directly depositing a diamond-like carbon film by dual ion beams according to claim 1 or 2 or 3 or 4 or 5, characterized in that the process flow is as follows: (1)衬底预处理:对衬底表面进行磨平抛光、清洁干燥等预处理;(1) Substrate pretreatment: perform pretreatments such as grinding, polishing, cleaning and drying on the substrate surface; (2)衬底表面离子束轰击清洗:用低能大束流离子束轰击清洗待处理工件表面;(2) Ion beam bombardment cleaning on the surface of the substrate: use low energy and large beam current ion beam bombardment to clean the surface of the workpiece to be treated; (3)双离子束轰击制作混合界面:用低能含碳离子束直接沉积类金刚石膜层,同时用中能Ar+离子束轰击膜层;(3) Double ion beam bombardment to make a mixed interface: use a low-energy carbon-containing ion beam to directly deposit a diamond-like film layer, and at the same time use a medium-energy Ar + ion beam to bombard the film layer; (4)低能离子束直接沉积类金刚石膜:停止中能Ar+离子束轰击,继续用低能含碳离子束直接沉积类金刚石膜;(4) Direct deposition of diamond-like carbon film by low-energy ion beam: stop the bombardment of medium-energy Ar + ion beam, and continue to directly deposit diamond-like carbon film with low-energy carbon-containing ion beam; (5)检测、应用:对膜层进行性能测试,工件应用于生产。(5) Detection and application: perform performance test on the film layer, and apply the workpiece to production.
CNB011285923A 2001-09-12 2001-09-12 Process of direct deposition of diamond-like carbon film by dual ion beams Expired - Fee Related CN1172019C (en)

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Cited By (8)

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CN100410418C (en) * 2006-05-19 2008-08-13 哈尔滨工业大学 Combination Treatment Method of Ion Implantation and Deposition in Raceway of Bearing Outer Ring
CN102373433A (en) * 2011-11-21 2012-03-14 武汉大学 Method for preparing ultrathin carbon film by using carbon cluster ion beam
US8269931B2 (en) 2009-09-14 2012-09-18 The Aerospace Corporation Systems and methods for preparing films using sequential ion implantation, and films formed using same
US8946864B2 (en) 2011-03-16 2015-02-03 The Aerospace Corporation Systems and methods for preparing films comprising metal using sequential ion implantation, and films formed using same
US9324579B2 (en) 2013-03-14 2016-04-26 The Aerospace Corporation Metal structures and methods of using same for transporting or gettering materials disposed within semiconductor substrates
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CN112501568A (en) * 2020-11-30 2021-03-16 湖南大学 Micro-nano multilayer structure composite material and preparation method and application thereof
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CN100410418C (en) * 2006-05-19 2008-08-13 哈尔滨工业大学 Combination Treatment Method of Ion Implantation and Deposition in Raceway of Bearing Outer Ring
US8269931B2 (en) 2009-09-14 2012-09-18 The Aerospace Corporation Systems and methods for preparing films using sequential ion implantation, and films formed using same
US9048179B2 (en) 2009-09-14 2015-06-02 The Aerospace Corporation Systems and methods for preparing films using sequential ion implantation, and films formed using same
US8946864B2 (en) 2011-03-16 2015-02-03 The Aerospace Corporation Systems and methods for preparing films comprising metal using sequential ion implantation, and films formed using same
CN102373433A (en) * 2011-11-21 2012-03-14 武汉大学 Method for preparing ultrathin carbon film by using carbon cluster ion beam
US9324579B2 (en) 2013-03-14 2016-04-26 The Aerospace Corporation Metal structures and methods of using same for transporting or gettering materials disposed within semiconductor substrates
CN111485214A (en) * 2020-03-13 2020-08-04 北京交通大学 Preparation method of composite gradient structure modified layer and product
CN112501568A (en) * 2020-11-30 2021-03-16 湖南大学 Micro-nano multilayer structure composite material and preparation method and application thereof
CN115125478A (en) * 2021-03-24 2022-09-30 东莞新科技术研究开发有限公司 Method for coating semiconductor surface

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