CN1213598A - Method and appts. for realizing fast shaping by using semiconductor laser device array - Google Patents
Method and appts. for realizing fast shaping by using semiconductor laser device array Download PDFInfo
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- CN1213598A CN1213598A CN 98117997 CN98117997A CN1213598A CN 1213598 A CN1213598 A CN 1213598A CN 98117997 CN98117997 CN 98117997 CN 98117997 A CN98117997 A CN 98117997A CN 1213598 A CN1213598 A CN 1213598A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims abstract description 11
- 238000007493 shaping process Methods 0.000 title claims abstract description 11
- 230000003287 optical effect Effects 0.000 claims abstract description 4
- 239000000843 powder Substances 0.000 claims description 13
- 238000007598 dipping method Methods 0.000 claims description 12
- 238000000465 moulding Methods 0.000 claims description 12
- 238000005245 sintering Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 4
- 239000002994 raw material Substances 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000003754 machining Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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Abstract
A method for high-speed shaping with semiconductor laser array features that the individually driven cells in semiconductor laser array are controlled by computer to determine which cells can output optical power and a optical system corresponding to each laser cell is used to form an array-type energy source to directly make 3D shaped body by adding energy to selected area of raw material layer by layer. Its apparatus is composed of forming chamber, laser window, and semiconductor laser array as energy source over the forming chamber. Its advantages are simple structure and high shaping speed.
Description
The present invention relates to a kind of method and device that utilizes semiconductor laser array to realize rapid shaping, it belongs to a kind of method and device of semiconductor laser rapid shaping.
The spot scan mode that present quick automatic forming machine adopts is with lens laser beam to be focused on working face a little, scans line by line, utilizes the control realization constituency processing of computer to laser power output.The laser point scanning system is when if scan mode promptly is provided with scanner after adopting lens behind condenser lens (accompanying drawing 1), because the track of focus point is a circular arc, far apart at track edges place and working face place, only just overlap with working face in the track center, have a strong impact on workpiece quality.When the laser point scanning system promptly is provided with scanner as if the preceding scan mode of employing lens before condenser lens (accompanying drawing 2), quality of scanning is good, the track of focus point is that a straight line can overlap with working face, but condenser lens is not at paraxial light but works under big visual field, the condenser lens bore is big, causes the difficulty of visual field aberration correction and optics processing.
The purpose of this invention is to provide a kind of do not have method and device with semiconductor laser array realization rapid shaping the general character scanning system, that the shaped article quality is good and shaping speed is fast.
Task of the present invention is achieved in that
A kind of method that realizes rapid shaping with semiconductor laser array, it uses a computer but whether the luminous power of the semiconductor laser array laser unit of each element drive exported and controls, form a kind of array energy source by each laser unit corresponding optical system again and realize that material successively adds in the constituency, directly makes the three dimensional type body.
Be the rapid molding device of realizing that said method designs, it comprises forming room and laser window etc., wherein it also comprises the semiconductor laser array energy source, and the semiconductor laser array energy source is located at the forming room top, as the energy source of realizing material constituency interpolation successively; Forming room is made up of moulding piston, confession powder piston, shop powder cylinder and corresponding motion, to finish the motion of various automatic mouldings; Laser window is arranged between forming room and the semiconductor laser array energy source, in order to transmit laser energy and to isolate forming room and extraneous getting in touch.
Above-mentioned semiconductor laser array energy source comprises semiconductor laser array, fast axis collimation cylindrical mirror and slow axis collimation microtrabeculae lens array, the fast axis collimation cylindrical mirror is located at the front of semiconductor laser array and makes semiconductor laser array be positioned at the focus place of fast axis collimation cylindrical mirror, slow axis collimation microtrabeculae lens array is positioned at a side of fast axis collimation cylindrical mirror bright dipping, make the luminous first plane of its focal plane and semiconductor laser array coplane, fast axis collimation cylindrical mirror and slow axis collimation microtrabeculae lens array are used for collimating the fast axle of semiconductor laser array and the angle of divergence of slow-axis direction respectively.
Above-mentioned semiconductor laser array can be the face battle array, surface array semiconductor laser can be installed on that the little single semiconductor laser on heat sink of thin slice is formed or with the semiconductor laser composition of several magnetic tape trailer fibres with several, but each semiconductor laser element drive of face battle array,, with the bright dipping that realizes the control respective element whether the pitch of surface array semiconductor laser array and line-spacing are by constituency sintering successively or to solidify the requirement of precision definite.
Above-mentioned semiconductor laser array also can be linear array, the linear array semiconductor laser is installed on several that little single semiconductor laser on heat sink of thin slice is formed or with the semiconductor laser composition of several magnetic tape trailer fibres, but each semiconductor laser element drive of linear array,, with the bright dipping that realizes the control respective element whether the pitch of linear array semiconductor laser array is by constituency sintering successively or to solidify the requirement of precision definite.
Because the present invention adopted technique scheme, therefore compare with background technology, have no general character scanning system, simple in structure, shaping speed soon, good product quality and advantage such as easy to operate.
The present invention is described in further detail below in conjunction with drawings and Examples.
Fig. 1 is a scan mode laser point scanning system behind the lens;
Fig. 2 is a scan mode laser point scanning system before the lens;
Fig. 3 is a laser diode stack constituency sintering for quick formation machine schematic diagram;
Fig. 4 is a diode laser array constituency sintering for quick formation machine schematic diagram;
Fig. 5 is the collimation cylindrical mirror of diode laser array quick shaft direction;
Fig. 6 is a diode laser array energy source schematic diagram;
Fig. 7 is the schematic diagram with little heat sink single semiconductor laser.
Among Fig. 11 is condenser, and 2 is tilting mirror, and 3 is track while scan, and 4 is working face.
Among Fig. 25 is the condenser unit, and 2 is tilting mirror, and 6 is track while scan, overlaps with working face.
As shown in Figure 3, laser diode stack constituency sintering for quick formation machine comprises parts such as laser diode stack energy source 7, forming room and laser window 9, be located at the forming room top as the laser diode stack energy source 7 of realizing material constituency interpolation successively energy source, forming room is made up of moulding piston 12, confession powder piston 13, shop powder cylinder 15 etc., laser window 9 is arranged between forming room and the laser diode stack energy source 7, in order to transmit laser energy and to isolate forming room and extraneous getting in touch.10 is processing plane among the figure, 11 parts for generation, and 14 is material powder, Z is the expression piston direction of motion.The laser diode stack energy source comprises laser diode stack, fast axis collimation cylindrical lens array and slow axis collimation microtrabeculae lens array, the fast axis collimation cylindrical lens array is located at the front of laser diode stack and makes semiconductor laser array be positioned at the focus place of fast axis collimation cylindrical mirror, slow axis collimation microtrabeculae lens array is positioned at a side of fast axis collimation cylindrical mirror bright dipping, make the luminous first plane of its focal plane and laser diode stack coplane, fast axis collimation cylindrical lens array and slow axis collimation microtrabeculae lens array are used for collimating the fast axle of laser diode stack and the angle of divergence of slow-axis direction respectively.Laser diode stack is installed on the little semiconductor laser on heat sink of thin slice with several and forms, each semiconductor laser element of face battle array can be independently by computer drives,, with the bright dipping that realizes the control respective element whether the pitch of surface array semiconductor laser array and line-spacing are by constituency sintering successively or to solidify the requirement of precision definite.When laser diode stack can topped three dimensional type body each layer cross section the time, then laser diode stack only needs do relative mechanical movement perpendicular to aspect, can realize that successively add in the constituency to make the three dimensional type body.The semiconductor laser of also available several magnetic tape trailer fibres of above-mentioned surface array semiconductor laser is formed.
This machine course of work is: the height of finishing one deck sintering aftershaping piston 12 declines one bed thickness, and for powder piston 13 rising certain height powder is released, push working face 10 places of moulding piston 12 tops to and pave compacting by shop powder cylinder 15, restart this layer of energy source sintering, so be concatenated to form 3D solid 11.
As shown in Figure 4, diode laser array constituency sintering for quick formation machine comprises parts such as diode laser array energy source 16, forming room and laser window 9, be located at the forming room top as the diode laser array energy source 16 of realizing material constituency interpolation successively energy source, forming room is made up of moulding piston 12, confession powder piston 13, shop powder cylinder 15 etc., laser window 9 is arranged between forming room and the diode laser array energy source 16, in order to transmit laser energy and to isolate forming room and extraneous getting in touch.10 is processing plane among the figure, 11 parts for generation, and 14 is material powder, and Z is the expression piston direction of motion, and X represents the scanning motion direction.The diode laser array energy source comprises diode laser array 17, fast axis collimation cylindrical mirror 18 and slow axis collimation microtrabeculae lens array 19 (see figure 6)s, and fast axis collimation cylindrical mirror 18 is located at the front of diode laser array 17 and makes diode laser array 17 be positioned at the focus place of fast axis collimation cylindrical mirror 18.Slow axis collimation microtrabeculae lens array 19 is positioned at a side of fast axis collimation cylindrical mirror 18 bright dippings, make 17 luminous yuan of plane coplanes of its focal plane and diode laser array, fast axis collimation cylindrical mirror 18 and slow axis collimation microtrabeculae lens array 19 are used for collimating the fast axle of diode laser array 17 and the angle of divergence of slow-axis direction respectively.Diode laser array is installed on little single semiconductor laser on heat sink with several to be formed, and each semiconductor laser element of linear array has independently power supply, so that the bright dipping that drive realizes the control respective element whether.The pitch of linear array semiconductor laser array is determined by the requirement of constituency sintering or curing precision successively.Example: the pitch P of luminous unit in the diode laser array (centre-to-centre spacing of each luminous unit) should be able to satisfy the requirement of machining accuracy, for example: machining accuracy is ± 0.2mm, then array element output light whether resolution should be higher than 0.2mm, and promptly size that luminous unit influenced of switch is not more than 0.2mm.According to this size P, the length of the luminous unit of designing semiconductor laser array and gap.As: as each luminous first length e=0.1mm, then the interval of each luminous unit must not surpass 0.2-0.1=0.1mm.Gap size is very big to the influence of array processing technology, therefore will be optimized design in parameters such as machining accuracy, pitch, length, interval.The semiconductor laser of also available several magnetic tape trailer fibres of above-mentioned linear array semiconductor laser is formed.When the line length of diode laser array during greater than the maximum length in each cross section of three dimensional type body, then diode laser array only need along perpendicular to the one-dimensional scanning of linear array direction with do relative mechanical movement perpendicular to aspect, can realize that successively add in the constituency to make the three dimensional type body.The working condition of each parts is the same in the forming room.When the line length of each layer cross section that battle array can not topped three dimensional type body or linear array is less than the maximum length in each cross section of three dimensional type body face to face, can realizes that successively add in the constituency by piecemeal and make the three dimensional type body.
As shown in Figure 5, the length of fast axis collimation cylindrical mirror 18 generatrix directions and the equal in length of diode laser array 17, the clear aperture c.a. of its radial direction is decided by the focal distance f of fast axis collimation cylindrical mirror 18 and the angle of divergence θ of diode laser array 17 fast axles, c.a.=f θ (1).When semiconductor laser was the face battle array, the quick shaft direction collimation just should form the face battle array by many elongated cylindrical mirrors and realize.
As shown in Figure 6.The same among the fast axis collimation cylindrical mirror 18 of the quick shaft direction of diode laser array 17 and Fig. 5, the length of the microtrabeculae lens array 19 of slow-axis direction collimation equates with diode laser array 17, the width of its generatrix direction should be greater than the clear aperture of fast axis collimation cylindrical mirror 18, can both enter lens and be not blocked with the light of the both direction that guarantees to send by laser instrument, the clear aperture c.a. of its radial direction is decided by its focal distance f and laser instrument slow axis angle of divergence θ, and is identical with formula (1).When semiconductor laser array was the face battle array, the slow-axis direction collimation also should be formed the face battle array by a plurality of linear array cylindrical microlenses arrays and realize.E is a laser unit bright dipping size among the figure, and c.a. is a clear aperture, S
OmaxBe the ultimate range of microlens array to laser unit exit facet, f is a focal length, and P is a pitch.
The dimension size of the luminous first quick shaft direction of semiconductor laser minimum (1 μ m magnitude), can regard spot light as, therefore can see desirable directional light as behind the collimation, and the dimension size of the luminous unit of slow-axis direction big (tens to a hundred or so μ m magnitude), therefore there is the residue angle of divergence in the collimation back, can be calculated as follows:
α wherein
MaxBe the residue angle of divergence behind the collimation, e is a laser unit bright dipping size, and c.a. is the aperture diaphragm diameter, S
OmaxBe the ultimate range of microlens array to laser unit exit facet, θ
HW1/ e
2For laser beam power drops to center 1/e
2The pairing angle of divergence of diameter of value.
When having selected fast and slow axis collimation optics output collimated light beam and can not obtain satisfactory array hot spot, can be on certain operating distance each luminous first imaging of noise spectra of semiconductor lasers array, adjust the position of the collimation optics of this fast axle and slow axis with respect to the luminous unit of laser instrument, can on working face, obtain the picture of the luminous unit of linear array or face battle array, form satisfactory energy source.
As shown in Figure 7, form by little heat sink 20, binding post 21, connecting line 22 and semiconductor laser wafer 23 with little heat sink single semiconductor laser.Preparation method is: the diode laser array wafer and the precision machined little heat sink assembly indium weldering of earlier special light being carved with separating tank, wafer should be counter mounted on little heat sink upward (being that the P district is close to heat sink) on the structure and be beneficial to heat radiation, N district lead-in wire with each laser unit is connected on corresponding each binding post then, to realize driving respectively, after having finished separation and line operation, obtain several with little heat sink single semiconductor laser, on anchor clamps, be assembled into diode laser array again.Little heat sink size and laser instrument wafer sufficiently high precision is installed, the cleavage surface that can guarantee each laser instrument unit flushes the spacing with laser instrument unit, also just can guarantee to collimate the collimation of back outgoing beam and the pitch between the linear array element.
The power supply that drives each laser unit of semiconductor laser array can adopt quantity to equate with laser unit quantity, with laser unit drive power supply one to one, also can adopt unified Laser Power Devices, by the first corresponding laser unit that drives in proper order of decoding choosing.
Claims (5)
1, a kind of method that realizes rapid shaping with semiconductor laser array, it is characterized in that: control but use a computer whether the luminous power of the semiconductor laser array laser unit of each element drive exported, form a kind of array energy source by each laser unit corresponding optical system again and realize that material successively adds in the constituency, directly makes the three dimensional type body.
2, a kind of rapid molding device of realizing the described method of claim 1 and designing, it comprises forming room and laser window, it is characterized in that: it also comprises the semiconductor laser array energy source, the semiconductor laser array energy source is located at the forming room top, as the energy source of realizing material constituency interpolation successively; Forming room is made up of moulding piston, confession powder piston, shop powder cylinder and corresponding motion, to finish the motion of various automatic mouldings; Laser window is arranged between forming room and the semiconductor laser array energy source, in order to transmit laser energy and to isolate forming room and extraneous getting in touch.
3, rapid molding device according to claim 2, it is characterized in that: described semiconductor laser array energy source comprises semiconductor laser array, fast axis collimation cylindrical mirror and slow axis collimation microtrabeculae lens array, the fast axis collimation cylindrical mirror is located at the front of semiconductor laser array and makes semiconductor laser array be positioned at the focus place of fast axis collimation cylindrical mirror, slow axis collimation microtrabeculae lens array is positioned at a side of fast axis collimation cylindrical mirror bright dipping, make the luminous first plane of its focal plane and semiconductor laser array coplane, fast axis collimation cylindrical mirror and slow axis collimation microtrabeculae lens array are used for collimating the fast axle of semiconductor laser array and the angle of divergence of slow-axis direction respectively.
4, rapid molding device according to claim 3, it is characterized in that: described semiconductor laser array can be the face battle array, surface array semiconductor laser can be installed on that the little single semiconductor laser on heat sink of thin slice is formed or with the semiconductor laser composition of several magnetic tape trailer fibres with several, but each semiconductor laser element drive of face battle array,, with the bright dipping that realizes the control respective element whether the pitch of surface array semiconductor laser array and line-spacing are by constituency sintering successively or to solidify the requirement of precision definite.
5, rapid molding device according to claim 3, it is characterized in that: described semiconductor laser array also can be linear array, the linear array semiconductor laser is installed on several that little single semiconductor laser on heat sink of thin slice is formed or with the semiconductor laser composition of several magnetic tape trailer fibres, but each semiconductor laser element drive of linear array,, with the bright dipping that realizes the control respective element whether the pitch of linear array semiconductor laser array is by constituency sintering successively or to solidify the requirement of precision definite.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 98117997 CN1062799C (en) | 1998-09-15 | 1998-09-15 | Method and appts. for realizing fast shaping by using semiconductor laser device array |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 98117997 CN1062799C (en) | 1998-09-15 | 1998-09-15 | Method and appts. for realizing fast shaping by using semiconductor laser device array |
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| CN1213598A true CN1213598A (en) | 1999-04-14 |
| CN1062799C CN1062799C (en) | 2001-03-07 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105562688A (en) * | 2014-10-31 | 2016-05-11 | 西门子公司 | Manufacture of a component through selective laser melting |
| CN105710369A (en) * | 2016-03-03 | 2016-06-29 | 西安铂力特激光成形技术有限公司 | Device for manufacturing three-dimensional body layer by layer, control method and scanning method |
| CN105880593A (en) * | 2016-06-17 | 2016-08-24 | 哈尔滨福沃德多维智能装备有限公司 | Multi-laser line beam printing type scanning fast forming device and method for manufacturing parts |
| CN106111985A (en) * | 2015-05-07 | 2016-11-16 | 吴小平 | Group scan laser selective sintering or curing and 3D forming machine thereof |
| CN106694878A (en) * | 2015-11-15 | 2017-05-24 | 罗天珍 | Group scanning calibration and auxiliary heating method for laser sintering or curing 3D forming machine |
| CN110842198A (en) * | 2019-11-19 | 2020-02-28 | 中国工程物理研究院机械制造工艺研究所 | Selective metal melting forming method based on laser spot patterning output |
| EP3554795A4 (en) * | 2016-12-15 | 2020-07-29 | General Electric Company | SYSTEMS AND METHODS FOR GENERATIVE PRODUCTION |
-
1998
- 1998-09-15 CN CN 98117997 patent/CN1062799C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105562688A (en) * | 2014-10-31 | 2016-05-11 | 西门子公司 | Manufacture of a component through selective laser melting |
| CN105562688B (en) * | 2014-10-31 | 2020-03-17 | 西门子公司 | Production of components by selective laser melting |
| US10603748B2 (en) | 2014-10-31 | 2020-03-31 | Siemens Aktiengesellschaft | Production of a component by selective laser melting |
| CN106111985A (en) * | 2015-05-07 | 2016-11-16 | 吴小平 | Group scan laser selective sintering or curing and 3D forming machine thereof |
| CN106694878A (en) * | 2015-11-15 | 2017-05-24 | 罗天珍 | Group scanning calibration and auxiliary heating method for laser sintering or curing 3D forming machine |
| CN105710369A (en) * | 2016-03-03 | 2016-06-29 | 西安铂力特激光成形技术有限公司 | Device for manufacturing three-dimensional body layer by layer, control method and scanning method |
| CN105880593A (en) * | 2016-06-17 | 2016-08-24 | 哈尔滨福沃德多维智能装备有限公司 | Multi-laser line beam printing type scanning fast forming device and method for manufacturing parts |
| EP3554795A4 (en) * | 2016-12-15 | 2020-07-29 | General Electric Company | SYSTEMS AND METHODS FOR GENERATIVE PRODUCTION |
| CN110842198A (en) * | 2019-11-19 | 2020-02-28 | 中国工程物理研究院机械制造工艺研究所 | Selective metal melting forming method based on laser spot patterning output |
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| CN1062799C (en) | 2001-03-07 |
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