CN120936567A

CN120936567A - Optical devices based on topological dark states and optical elements used in them

Info

Publication number: CN120936567A
Application number: CN202380097123.9A
Authority: CN
Inventors: A·V·阿尔塞宁; V·S·沃尔科夫; D·V·格鲁季宁; G·A·埃尔莫拉耶夫; A·V·瑟伊; I·M·弗拉德金; G·I·泰利克夫; A·A·维什涅维
Original assignee: Kosponseo Natural Science Research Single Member LLC
Current assignee: Kosponseo Natural Science Research Single Member LLC
Priority date: 2023-04-13
Filing date: 2023-12-01
Publication date: 2025-11-11
Also published as: WO2024215218A1

Abstract

This invention relates to the field of nanophotonics and specifically to an optical device. The optical device comprises a light source with a wavelength of λ _1s in the spectrum, wherein the light source is implemented as an image projector, and an optical element that is planar in the (x,y) plane, the normal of which forms an angle θ _1s with the optical axis of the light source. The optical element comprises at least a first optically transparent dielectric layer with a thickness d ₁ and a dielectric conductivity ε ₁ , a second absorbing two-dimensional material layer with a thickness d ₂ ≤ 100 nm and a dielectric conductivity ε ₂ , and an optically transparent substrate with a dielectric conductivity ε _3. The layers and substrate are configured to form topological dark states. The technical advantage lies in providing the possibility of producing planar optical devices with high image quality for ultrathin structures.

Description

Optical device based on topologically dark state and optical element therefor

Technical Field

The present invention relates to the field of nanophotonics, and in particular to projection optics based on planar diffractive optical elements, and may be used to create virtual images of objects in a field of view when forming virtual, augmented or augmented reality (VR/AR/XR), and may also be used to form other optical elements, such as optical differentiators, lenses, optical objectives, and the like.

Background

The prior art discloses an optical device for forming Augmented Reality (AR) comprising an optical element in the form of a transparent holographic screen (e.g. a vehicle windscreen) and a projection device focusing an image from an emitter onto a 3-D hologram (see publications US2015362734A1, cl. G02B27/01, G02B5/32, G02C7/04, G03H1/02, G03H1/04, G03H1/18 published on month 17 of 2015). The disadvantages of the prior art designs are the complexity of manufacture, the relatively low diffraction efficiency of holographic displays, the inability to manufacture flexible devices, and the large thickness of holographic screens.

The prior art discloses a translucent structured optical element comprising a first optically transparent layer having a nanostructured glass surface (a portion of the nanoplatform being at an angle of 10-90 ° to the plane of the layer) and a second discontinuous metal layer of thickness 1 to 50 nm (which covers at least a portion of the nanoplatform) (see publications AU2014292323A1, cl.b82y20/00, B82Y30/00, G02B5/18, G02B5/20 published by month 1/7 of 2016). In the prior art optical element, the second layer is produced by partially metallizing the nanostructured surface by vapor deposition, sputtering, printing, casting or stamping, while shadow masking or photoresist techniques are used to prevent the surface from being completely covered with metal. Such elements may be used to alter solar transmission (e.g., through a window) while maintaining its transparency. The disadvantages of the prior art are the complexity of the process of producing metallic nanoplates at an angle to the substrate (only metallic structures at 90 ° angles are relatively easy to produce), and the periodic quality of such nanostructures is insufficient (roughness of 5-10 nm for deposited metal layer thicknesses of 1-75 nm). Furthermore, such optical elements affect the transmission spectrum of all wavelengths, and the resulting structure cannot be transferred to another surface.

In essence, closest to the presently claimed invention is a planar optical device based on two-dimensional planar materials (e.g., atomically thin transition metal dichalcogenides) that makes it possible to achieve topological dark state effects (see Georgy Ermolaev, Kirill Voronin, Denis G. Baranov, Vasyl Kravets, Gleb Tselikov, Yury Stebunov, Dmitry Yakubovsky, Sergey Novikov, Andrey Vyshnevyy, Arslan Mazitov, Ivan Kruglov, Sergey Zhukov, Roman Romanov, Andrey M. Markeev, Aleksey Arsenin, Kostya S. Novoselov, Alexander N. Grigorenko and Valentyn Volkov, topological phase singularities （Topological phase singularities in atomically thin high-refractive-index materials）/NATURE COMMUNICATIONS | (2022) 13:2049 | https:/doi.org/10.1038/s41467-022-29716-4）. in atomically thin high refractive index materials such thin optical elements can be used as the basis for developing ultra-compact tunable optical devices compatible with complementary metal oxide semiconductor structures (CMOS). In this case, the topological approach (using topologically protected zero space with simple heterostructures) opens up new possibilities for the efficient use of atomically thin materials with high refractive index and non-zero optical losses as phase materials in photonics. The main drawbacks of the prior art are the opacity of the substrates employed (silicon oxide on silicon), their rigidity and the necessity to work in the zero space implemented in dissipative channels, which limits their application and does not allow for the image bending required for AR/VR/XR applications.

The technical problem is to eliminate the above drawbacks and to create a technical solution based on topological dark state effects that can be used for virtual image projection and processing.

Disclosure of Invention

The technical effect is to expand the functionality of planar optical devices for ultra-thin structures.

The problem of setting in relation to an optical device has been solved and the technical effect has been achieved in that the optical device comprises a light source of a spectral wavelength lambda _1s implemented as an image projector, and an optical element of a planar (x, y) plane having a normal at an angle theta _1s to the optical axis of the light source, wherein the optical element comprises at least a first optically transparent dielectric layer of thickness d ₁ and a dielectric permeability epsilon ₁, a second layer of absorptive two-dimensional material of thickness d ₂ <100 nm and a dielectric permeability epsilon ₂, and an optically transparent substrate of a dielectric permeability epsilon ₃, wherein the layers and substrate are configured to form a topologically dark state point a (lambda ₀,θ₀), wherein the absolute value of the phase integral of the complex scattering amplitude of incident light of wavelength lambda and angle theta on the optical element on a closed loop line L is:

[ mathematics 1]

Where L is an ellipse centered on point a (λ ₀,θ₀), half-axis λ _L =10 nm, and θ _L =5 °, ds is the derivative in space λ, θ, and λ _1s and θ _1s of the light source lie within the closed line L. The thickness of the first layer and/or the second layer is spatially modulated d ₂=d₂ (x, y). The second layer is preferably made of gold, copper, silver or aluminum and has a thickness of not more than 30 nm a. Further, the second layer may be made of ZnO、TiO₂、ZnS、MgO、BeO、PbF₂、CsI、HfO₂、Sc₂O₃、SiN、GaP、CsPbBr₃、CsPbCl₃、CsPbI₃、GaN、YVO₄、MgAlO、YAlO、LuAlO、AlSb、GaSb、InSb、AlAs、GaAs、InAs、BC、SiC、TiC、VC、CsCl、CuCl、BaF、CeF₃、LaF₃、LiF、SrF₂、LiI、KI、RbI、CaMoO₄、SrMoO₄、PbMoO₄、LiNbO₃、KNbO₃、VN、ZrO₂、GeO₂、TeO₂、WO₃、Fe₂O₃、Y₂O₃、Lu₂O₃、Nb₂O₅、Ta₂O₅、Fe₃O₄、InP、CdSe、PbSe、ZnSe、AgGaS₂、CdGa₂S₄、CdS、CuGaS₂、CdTe、Te、ZnTe、BaTiO₃、Bi₄Ti₃O₁₂、PbTiO₃、SrTiO₃、 diamond, graphite, graphene oxide 、MoS₂、WS₂、MoSe₂、WSe₂、Cd₃As₂、Cd₃Sb₂、Cr₂AlC、Cr₂C、Mn₂AlC、Mo₂C、Mo₂Ga₂C、Mo₃AlC₂、Nb₂AlC、Nb₂C、Nb₄AlC₃、Nb₄C₃、Ta₂C、Ta₄AlC₃、Ti₂AlC、Ti₂AlN、Ti₂C、Ti₂N、Ti₃AlC₂、Ti₃C₂、Ti₃CN、Ti₃SiC₂、Ti₄N₃、V₂AlC、V₂C、V₄AlC₃、V₄C₃、SnS₂、SnSe₂、ReS₂、ReSe₂、hBN、GaSe、Sb₂Te₃、PdS₂、PdSe₂、PtS₂、PtSe₂、GaS、GaTe、Ca(OH)₂、K(FeMg)₃Si₃AlO₁₀(OH)₂、Mg(OH)₂、MnO₂、MoO₃、Sb₂O₃、Sb₂OS₂、Sb₂Se₃、Sb₂S₃、As₂S₃、As₂Te₃、Bi₂O₂Se、Bi₂Se₃、Bi₂TeO₂、BiSbTe₃、Bi₂S₃、Bi₂Te₃、AsP、CdI₂、CdPS₃、CuS、CoPS₃、Cr₂Ge₂Te₆、Cr₂S₃、CrBr₃、CrCl₃、CrGeTe₃、CrPS₄、CrSeBr、CuCrP₂S₆、CuIn₇Se₁₁、FeCl₂、FePS₃、FePSe₃、MoTe₂、GaGeTe、GaInS₃、GaSeTe、GaSSe、GaPS₄、GaSTe、GeAs、GeSe、GeS、GeS₂、GeTe、HfSe₂、HfS₂、HfTe₂、In₂S₃、In₂Se₃、InSe、InTe、InGaSe₂、InSeBr、InSnSe、MnPS₃、MnPSe₃、MoSSe、MoWSe₂、MoWS₂、MoWTe₂、MoNbSe₂、MoO_2.5Cl_0.5、MoReS₂、MoTaSe₂、MoVSe₂、Na₂Co₂TeO₆、Nb₂SiTe₄、NbReS₂、NbReSe₂、NbS₃、Ni₂SiTe₄、Ni₃TeO₆、NiCl₂、NiI₂、NiPS₃、PbI₂、PbTe、PtTe₂、ReMoS₂、ReNbS₂、ReNbSe₂、ReSSe、SbAsS₃、SbSe、SbSI、SiP、SnPSe₃、SnS、Ta₂NiS₅、TaS₂、TaS₃、TaSe₂、TaWSe₂、TlSe、TiBr₃、SnTe₂、TiS₃、TlGaS₂、TlGaSe₂、TlGaTe₂、TlInS₂、WTe₂、WSSe、WNbSe₂、WReSe₂、ZrS₂、ZnIn₂S₄、ZnPS₃、ZnPSe₃、ZrGeTe₄、ZrS₃、ZrSe₂、ZrSe₃、ZrTe₂、ZrTe₃、Cr₂Si₂Te₆、Cr₂Te₃、CrI₃、CrSBr、CrTe₂、Fe₃GeTe₂、Fe₄GeTe₂、TaCo₂Te₂、VS₂、VSe₂、VTe₂、BiSbTeSe、BiTe、CuFeTe、HfTe₅、FeSe、FeTeSe、FeTe、NbS₂、NbSe₂、NbTe₂、NbTe₄、NiTe₂、PdBi₂、PdTe₂、SnTaS₂、TaTe₂、TiTe₂、 Tl₂Ba₂CaCu₂O₈、ZrSiS、CdAs₂、CuSi₂P₃、NbAs₂、PbTaSe₂、Ta₂NiSe₅、Ta₂NiTe₅、Ta₂Se₈I、TaNi₂Te₃、TiS₂、TiSe₂、WNbTe₂、ZnAs₂、ZrTe₅、LaTe₂、NbSe₃、Bi₂SeTe₂、Bi₂Te₂S、BiInTe₃、Bi₂Se_1.5Te_1.5、Bi₄Te_1.5S_1.5、GeBi₂Te₄、PbBi₂Te₄、SnBi₄Te₇、SnSb₂Te₄、NiTe、SbTe、SiTe₂、BiTeI、InSSe、PbSnS₂、TlGaS₃、C₃N₄、Cu₂Te、GeSeTe、MnTe、As₂Se₃、CrPS₃、SnSe、WReS₂、TiBr、BaTiS₃、Al₂O₃、BiFeO₃、Ag₃AsS₃、HgS、 bismuth strontium calcium copper oxide, black arsenic or black phosphorus. The light source is preferably linearly polarized and monochromatic and has a center wavelength lambda _1s. The phase phi may be the phase of the complex scattering amplitude of the light in the reflection channel, and the optical element is manufactured according to the following conditions:

For s-polarization or p-polarization,

[ Math figure 2]

,

Where r ₀₁₂₃ is the reflection factor of the optical element,

[ Math 3]

For s-polarization, it is possible that,

[ Mathematics 4]

,

For the p-polarization it is possible that,

[ Math 5]

,

[ Math figure 6]

[ Math 7]

I. j is the index number of the layer, ε _i is the dielectric permeability of the i-th layer, d _i is the thickness of the i-th layer, ε ₀ is the dielectric permeability of the medium from which the light is coming. Or the phase phi is the phase of the complex scattering amplitude of the light in the transmission channel, and the optical element is manufactured according to the following conditions:

For s-polarization or p-polarization,

[ Math figure 8]

,

Where t ₀₁₂₃ is the transmittance of the optical element,

[ Math figure 9]

For s-polarization, it is possible that,

[ Math figure 10]

,

For the p-polarization it is possible that,

[ Mathematics 11]

,

[ Math figure 6]

[ Math 7]

I. j is the index number of the layer, ε _i is the dielectric permeability of the i-th layer, d _i is the thickness of the i-th layer, ε ₀ is the dielectric permeability of the medium from which the light is coming.

The setting problem related to optical devices has been solved and the technical effect has been achieved in that the optical device comprises at least a first optically transparent dielectric layer of thickness d ₁ and dielectric permeability epsilon ₁ and a second layer of absorbing material of thickness d ₂ and dielectric permeability epsilon ₂ arranged in sequence and additionally provided with an adhesive layer deposited on the free surface of the first layer or the second layer, wherein the layers are configured to form topologically dark state points by having the first layer realized as a polymer film of thickness d ₁=0.01-100 µm、ε₁ =1.7-4.0 and the second layer made of metal of thickness d ₂≤30 nm、|ε₂ |=1-10. The second layer is preferably made of gold, copper, silver or aluminum and its thickness is spatially modulated, for example in the form of a diffraction grating.

Drawings

FIG. 1

FIG. 1 is a general schematic diagram of the disclosed optical device;

FIG. 2

FIG. 2 is an example of a phase distribution around a topologically dark state point A (λ ₀,θ₀) in a parameter space of wavelength λ and angle of incidence θ;

FIG. 3

Fig. 3 is a diagram for determining a phase distribution on a plane (x, y) of an optical element using an ellipsometer.

Detailed Description

The disclosed optical device represents a light source 1 and an optical element 2 that is planar in the (x, y) plane, which are rigidly fixed relative to each other.

For example, the light source 1 may be represented by a broadband multicolor image projector based on an RGB LED matrix or a laser image projector with linear polarization and monochromatic light having a center wavelength λ _ls. The light source 1 is mounted with its optical axis at an angle theta _ls to the normal n of the optical element 2.

The optical element 2 itself is manufactured as a heterostructure comprising along the axis z at least a first optically transparent dielectric layer 3 (in fig. 1: thickness d ₁, dielectric permeability epsilon ₁), a second layer 4 of absorptive two-dimensional material (in fig. 1: thickness d ₂ <100 nm, dielectric permeability epsilon ₂) and an optically transparent substrate 5 (dielectric permeability epsilon ₃). The upper limit of the thickness of the absorbent two-dimensional material layer 4 is a value of 100 nm to ensure that its transparency condition is satisfied. For some applications the heterostructure may contain a greater number of layers arranged in various orders-the outer layer may be represented by both the dielectric layer 3 and the absorber layer 4 (i.e. the terms "first" and "second" as used herein do not define the layer arrangement order).

The layers of the heterostructure (for the selected substrate 5 material) are prepared so as to form a topological dark state point a (a ₀,θ₀) close to λ _ls and θ _ls of the light source 1 used. This means that due to the topology (composition and thickness of layers) the optical element 2 has zero amplitude in one of the dissipative channels, for example in the reflective or transmissive channels (reflection and transmission as a specific case of dissipation are described in for example the publication "time-coupled mode theory of fano resonance "（Temporal coupled-mode theory for the Fano resonance in optical resonators）,Shanhui Fan, Wonjoo Suh and J. D. Joannopoulos,Journal of the Optical Society of America A Vol. 20, Issue 3, pp. 569-572, 2003, DOI: 10.1364/JOSAA.20.000569）. in optical resonators) this results in that the diffraction efficiency in the other channel can be significantly improved (up to 10%) so that a sufficiently bright virtual image can be produced using an optical element 2 that is completely transparent in the range 300 nm to 2 μm.

The topologically dark state of the optical element 2 will be the point a (lambda ₀,θ₀) for which the absolute value of the phase phi integral on the closed line L of the complex scattering amplitude of the incident light on said optical element with wavelength lambda and angle theta is:

[ mathematics 1]

Where L is an ellipse centered on point a (lambda ₀,θ₀), half axis lambda _L =10 nm and θ _L =5°,

Ds is the derivative in space lambda, theta,

And lambda _1s and theta _1s of the light source are located within the closed line L.

The ellipse L defines the operating range of wavelengths and angles at which the disclosed optical device operates efficiently. The values of the elliptical L half-axes are chosen on the basis of simulation and experimental results, the larger the values of λ _L and θ _L (the more relaxed the matching conditions), the weaker the topological dark state effect, and the significantly reduced intensity of the light entering the desired dissipation channel (for example when bending the light coming from the projector into the user's eye), while the lower the values of λ _L and λ _L (the more stringent the matching conditions), the significantly increased the working time of adjusting the device (positioning the light source 1 relative to the optical element 2).

That is, the topologically dark state point of the optical element 2 will be represented by the values of the wavelength λ ₀ and the incident angle θ ₀, around which the phase Φ of the scattered light changes very rapidly, i.e. the phase difference between the opposite points of the ellipse L is not less than pi/2.

The phase phi distribution of the optical element 2 can be determined in reflection/transmission/dissipation mode using ellipsometry [ fig. 3 ]. For a plurality of wavelengths λ and angles of incidence θ of the sample source 7 around the point a where the singularity study is performed, the method makes it possible to directly measure the phase Φ of the polarized light reflected from the sample using the detector 6. If there is an ellipse with an absolute value of the phase phi gradient integral greater than pi in an ellipse centered around the discussion point a in space (λ, θ), with principal half axes λ _L =10 nm and θ _L =5°, this point can be regarded as a phase singularity, i.e. a topologically dark state point. Therefore, in order to produce an optical device based on said optical element 2, it is necessary to use the respective light sources 1, i.e. the image projectors with λ _1s and θ _1s located within said closed line L.

The parameters of the optical element 2 may be calculated based on the following considerations.

If the phase phi is the phase of the complex scattering amplitude of the light in the reflection channel, then the optical element 2 must be realized in order to achieve a topologically dark state effect according to the following conditions:

For s-polarization or p-polarization,

[ Math figure 2]

,

Where r ₀₁₂₃ is the reflection factor of the optical element 2 and the other formula components are defined as follows:

[ math 3]

[ Mathematics 4]

,

According to [ mathematical formula 4], r _ij is the reflection factor (for s-polarization) at the interface of materials i and j,

[ Math 5]

,

According to [ mathematical formula 5], r _ij is the reflection factor (for p-polarization) at the interface of materials i and j,

[ Math figure 6]

[ Math 7]

I. j is the index number of the layer (in the outside-in direction, towards the substrate of the optical element 2),

Epsilon _i is the dielectric permeability of the i-th layer,

D _i is the thickness of the i-th layer,

Epsilon ₀ is the dielectric permeability of the medium from which the light comes.

But if the phase phi is the phase of the complex scattering amplitude of the light in the transmission channel, then to achieve a topologically dark state effect the optical element 2 must be realized as follows:

For s-polarization or p-polarization,

[ Math figure 8]

,

Where t ₀₁₂₃ is the transmittance of the optical element 2 as a whole,

[ Math figure 9]

[ Math figure 10]

,

According to [ mathematical formula 10], r _ij is the reflection factor (for s-polarization) at the interface of materials i and j,

[ Mathematics 11]

,

According to [ mathematical formula 11], r _ij is the reflection factor (for p-polarization) of the material i and j interface,

[ Math figure 6]

[ Math 7]

Epsilon _i is the dielectric permeability of the i-th layer,

D _i is the thickness of the i-th layer,

In practice, it is reasonable to manufacture the absorber layer 4 with a thickness of not more than 30 nm from, for example, metal (gold, copper, silver or aluminum) or another high refractive index material （ZnO、TiO₂、ZnS、MgO、BeO、PbF₂、CsI、HfO₂、Sc₂O₃、SiN、GaP、CsPbBr₃、CsPbCl₃、CsPbI₃、GaN、YVO₄、MgAlO、YAlO、LuAlO、AlSb、GaSb、InSb、AlAs、GaAs、InAs、BC、SiC、TiC、VC、CsCl、CuCl、BaF、CeF₃、LaF₃、LiF、SrF₂、LiI、KI、RbI、CaMoO₄、SrMoO₄、PbMoO₄、LiNbO₃、KNbO₃、VN、ZrO₂、GeO₂、TeO₂、WO₃、Fe₂O₃、Y₂O₃、Lu₂O₃、Nb₂O₅、Ta₂O₅、Fe₃O₄、InP、CdSe、PbSe、ZnSe、AgGaS₂、CdGa₂S₄、CdS、CuGaS₂、CdTe、Te、ZnTe、BaTiO₃、Bi₄Ti₃O₁₂、PbTiO₃、SrTiO₃、 diamond, graphite, graphene oxide 、MoS₂、WS₂、MoSe₂、WSe₂、Cd₃As₂、Cd₃Sb₂、Cr₂AlC、Cr₂C、Mn₂AlC、Mo₂C、Mo₂Ga₂C、Mo₃AlC₂、Nb₂AlC、Nb₂C、Nb₄AlC₃、Nb₄C₃、Ta₂C、Ta₄AlC₃、Ti₂AlC、Ti₂AlN、Ti₂C、Ti₂N、Ti₃AlC₂、Ti₃C₂、Ti₃CN、Ti₃SiC₂、Ti₄N₃、V₂AlC、V₂C、V₄AlC₃、V₄C₃、SnS₂、SnSe₂、ReS₂、ReSe₂、hBN、GaSe、Sb₂Te₃、PdS₂、PdSe₂、PtS₂、PtSe₂、GaS、GaTe、Ca(OH)₂、K(FeMg)₃Si₃AlO₁₀(OH)₂、Mg(OH)₂、MnO₂、MoO₃、Sb₂O₃、Sb₂OS₂、Sb₂Se₃、Sb₂S₃、As₂S₃、As₂Te₃、Bi₂O₂Se、Bi₂Se₃、Bi₂TeO₂、BiSbTe₃、Bi₂S₃、Bi₂Te₃、AsP、CdI₂、CdPS₃、CuS、CoPS₃、Cr₂Ge₂Te₆、Cr₂S₃、CrBr₃、CrCl₃、CrGeTe₃、CrPS₄、CrSeBr、CuCrP₂S₆、CuIn₇Se₁₁、FeCl₂、FePS₃、FePSe₃、MoTe₂、GaGeTe、GaInS₃、GaSeTe、GaSSe、GaPS₄、GaSTe、GeAs、GeSe、GeS、GeS₂、GeTe、HfSe₂、HfS₂、HfTe₂、In₂S₃、In₂Se₃、InSe、InTe、InGaSe₂、InSeBr、InSnSe、MnPS₃、MnPSe₃、MoSSe、MoWSe₂、MoWS₂、MoWTe₂、MoNbSe₂、MoO_2.5Cl_0.5、MoReS₂、MoTaSe₂、MoVSe₂、Na₂Co₂TeO₆、Nb₂SiTe₄、NbReS₂、NbReSe₂、NbS₃、Ni₂SiTe₄、Ni₃TeO₆、NiCl₂、NiI₂、NiPS₃、PbI₂、PbTe、PtTe₂、ReMoS₂、ReNbS₂、ReNbSe₂、ReSSe、SbAsS₃、SbSe、SbSI、SiP、SnPSe₃、SnS、Ta₂NiS₅、TaS₂、TaS₃、TaSe₂、TaWSe₂、TlSe、TiBr₃、SnTe₂、TiS₃、TlGaS₂、TlGaSe₂、TlGaTe₂、TlInS₂、WTe₂、WSSe、WNbSe₂、WReSe₂、ZrS₂、ZnIn₂S₄、ZnPS₃、ZnPSe₃、ZrGeTe₄、ZrS₃、ZrSe₂、ZrSe₃、ZrTe₂、ZrTe₃、Cr₂Si₂Te₆、Cr₂Te₃、CrI₃、CrSBr、CrTe₂、Fe₃GeTe₂、Fe₄GeTe₂、TaCo₂Te₂、VS₂、VSe₂、VTe₂、BiSbTeSe、BiTe、CuFeTe、HfTe₅、FeSe、FeTeSe、FeTe、NbS₂、NbSe₂、NbTe₂、NbTe₄、NiTe₂、PdBi₂、PdTe₂、SnTaS₂、TaTe₂、TiTe₂、 Tl₂Ba₂CaCu₂O₈、ZrSiS、CdAs₂、CuSi₂P₃、NbAs₂、PbTaSe₂、Ta₂NiSe₅、Ta₂NiTe₅、Ta₂Se₈I、TaNi₂Te₃、TiS₂、TiSe₂、WNbTe₂、ZnAs₂、ZrTe₅、LaTe₂、NbSe₃、Bi₂SeTe₂、Bi₂Te₂S、BiInTe₃、Bi₂Se_1.5Te_1.5、Bi₄Te_1.5S_1.5、GeBi₂Te₄、PbBi₂Te₄、SnBi₄Te₇、SnSb₂Te₄、NiTe、SbTe、SiTe₂、BiTeI、InSSe、PbSnS₂、TlGaS₃、C₃N₄、Cu₂Te、GeSeTe、MnTe、As₂Se₃、CrPS₃、SnSe、WReS₂、TiBr、BaTiS₃、Al₂O₃、BiFeO₃、Ag₃AsS₃、HgS、 bismuth strontium calcium copper oxide, black arsenic or black phosphorus in order to achieve transparent conditions.

In this case, the dielectric layer 3 may be prepared using any available polymer, such as polyvinyl alcohol, hydroxyethyl methacrylate, polydimethylsiloxane, polylactic acid, polymethyl methacrylate, polymethylpentene, polycarbonate, polyetherimide, and the like.

In order to make the manufacture of the screen of the produced projection optical device easier, the optical element 2 can be manufactured and supplied in the form of a thin flexible film free of the substrate 5. Then, in order to be able to use it is provided with an adhesive layer 6 so that it can be glued onto any existing transparent substrate (glass, vehicle windscreen, window, etc.). In this case, the best solution is to produce the first layer 3 in the form of a polymer film with a thickness d ₁=0.01-100 µm、ε₁ = 1.7-4.0 and the second layer 4 from a metal with a thickness d ₂≤30 nm、|ε₂ = 1-10. Now, in the preferred embodiment, the order of the layers plays an important role. These parameters ensure that the above topological dark state conditions are met for almost all transparent surfaces (made of glass, plastic, etc.) known to date.

In order to further increase the diffraction efficiency, the thickness of the dielectric layer 3 and/or the absorption layer 4 may be spatially modulated (preferably) d ₂=d₂ (x, y), i.e. may in fact represent a diffraction grating.

Thanks to the features described, the disclosed optical device and corresponding optical element can be used as a basis for forming a new generation of ultra-thin virtual, augmented or augmented reality (VR/AR/XR) devices. Varying the parameters of the disclosed optical elements within given limits can result in, for example, optical differentiators (i.e., structures that reflect only the boundaries of the picture elements), lenses or optical objectives (e.g., by forming fresnel zone plates with two-dimensional material thicknesses above and below the topological point), and many other optical elements.

Examples

Example 1.

The optical device comprises an image projector based on a laser light of wavelength λ _1s =655 nm mounted at an angle θ _1s =75° to the normal of an optical element in the form of a transparent screen, said optical element having a structure providing a topologically dark state around the point (655 nm,75 °), and representing a uniform polymer layer of polymethyl methacrylate with a thickness of 100 nm and a gold modulation layer with a thickness of 13 nm on a BK7 optical glass.

The optical element structure is obtained in the manufacturing cycle described below. A 13 nm layer of gold was deposited on BK7 optical glass using electron beam deposition. Then, a layer of 100 nm of polymethyl methacrylate was deposited from above using centrifugation (spin coating). The structure acts as an optical differentiator wherein the ratio of the intensity of the image element boundary reflection to the intensity of the image itself is about 100. It should be noted that the optical differentiator will only be used for plane polarizing normal light incidence, i.e. the disclosed optical element exhibits polarization selectivity. The projector will form a clearly visible picture of the boundary of the image element formed by the projector on the screen of the optical element.

Example 2.

The optical device includes an RGB LED matrix based image projector, wherein the projector is mounted at an angle θ _1s =75° to the normal to the optical element in the form of a transparent screen having the structure described in embodiment 1.

The structure acts as an optical differentiator, i.e. the structure will reflect an image boundary having a center wavelength of 655 nm and a half-width of 10 nm (i.e. the structure will also act as a filter for the 650-660 nm wavelength range), where the ratio of the image element boundary reflection intensity to the intensity of the image itself is about 100. That is, the projector will form a clearly visible picture of the boundary of the image element formed by the projector on the screen.

Example 3.

The optical device included an image projector based on 655 nm wavelength laser light polarized perpendicular to the plane of light incidence mounted at an angle θ _1s =75° to the normal of an optical element in the form of a transparent screen having the structure described in example 1.

The structure acts as an optical differentiator, i.e. the structure will reflect the image boundaries, wherein the ratio of the image element boundary reflection intensity to the intensity of the image itself is about 100 at these wavelengths. That is, the projector forms a clearly visible picture of the boundary of the image element formed by the projector on the screen, wherein the picture will not have any additional wavelength and polarization, contrary to embodiments 1 and 2.

Example 4.

The optical device comprises an image projector based on a laser of wavelength λ _1s =655 nm (for optimum visibility, the light must be polarized perpendicular to the plane of incidence of the light), the laser being mounted at an angle θ _1s =75° to the normal of an optical element in the form of a transparent screen, the optical element having a structure providing a topologically dark state around the point (655 nm,75 °), and representing a uniform polymer layer of polymethyl methacrylate with a thickness of 100 nm and a gold modulation layer with a thickness of 13 nm on a BK7 optical glass.

The optical element structure is obtained in the manufacturing cycle described below. A 13 nm layer of gold was deposited on BK7 optical glass using electron beam deposition. The gold layer was patterned into a diffraction grating with a period of 648 nm using electron beam lithography. Then, a layer of 100nm of polymethyl methacrylate was deposited from above using centrifugation (spin coating).

The resulting structure has a diffraction efficiency of more than 4.5% and a transparency of more than 70%. In this case, the projector forms a clearly visible picture on the screen with an intensity of about 4.5% of the light intensity of the projector (the intensity entering the desired diffraction channel is determined by the diffraction efficiency).

Example 5.

The optical device comprises an image projector based on a laser of wavelength λ _1s =655 nm (for optimum visibility, the light must be polarized perpendicular to the plane of incidence of the light), the laser being mounted at an angle θ _1s =75° to the normal of an optical element in the form of a transparent screen, the optical element having a structure providing a topologically dark state around the point (655 nm,75 °), and representing a modulated polymer layer of polymethyl methacrylate with a thickness of 100 nm and a uniform gold layer with a thickness of 13 nm on a BK7 optical glass.

The optical element structure is obtained in the manufacturing cycle described below. A 13 nm layer of gold was deposited on BK7 optical glass using electron beam deposition. Then, a layer of 100 nm of polymethyl methacrylate was deposited from above using centrifugation (spin coating). The polymethyl methacrylate layer was patterned into a diffraction grating with a period of 648 nm using electron beam lithography.

The resulting structure has a diffraction efficiency of more than 4.3% and a transparency of more than 70%. In this case, the projector forms a clearly visible picture on the screen with an intensity of about 4.3% of the light intensity of the projector.

Example 6.

The optical device comprises an RGB LED matrix based image projector, wherein the projector is mounted at an angle θ _1s =74° to the normal of an optical element in the form of a transparent screen, which has a structure providing a topologically dark state around the point (547 nm,74 °), and which represents a uniform polymer layer of polymethyl methacrylate with a thickness of 92 nm and a uniform aluminum layer with a thickness of 4 nm on a BK7 optical glass.

The optical element structure is obtained in the manufacturing cycle described below. A 4 nm layer of aluminum was deposited on BK7 optical glass using electron beam deposition. Then, a layer of 92 nm of polymethyl methacrylate was deposited from above using centrifugation (spin coating).

This structure acts as an optical differentiator, i.e. it will reflect an image boundary having a center wavelength of 547 nm and a half-width of 10 nm (i.e. it will also act as a filter for this 542-552 nm wavelength range), where the ratio of the image element boundary reflection intensity to the intensity of the image itself is about 100. That is, the projector will form a clearly visible picture of the boundary of the image element formed by the projector on the screen.

Example 7.

As in example 6, a projector based on laser light of center wavelength λ=530 nm polarized perpendicular to the plane of incidence of the light was used.

The structure acts as an optical differentiator, i.e. the structure will reflect the image boundaries, wherein the ratio of the image element boundary reflection intensity to the intensity of the image itself is about 100 at these wavelengths. That is, the projector forms a clearly visible picture of the boundary of the image element formed by the projector on the screen, wherein the picture will not have any additional wavelength and polarization, contrary to example 6.

Example 8.

The aluminum layer was patterned into a diffraction grating with a period of 1274 nm using electron beam lithography, as in example 7.

The resulting structure has a diffraction efficiency of more than 3.8% and a transparency of more than 70%. In this case, the projector forms a clearly visible picture on the screen formed by the projector with an intensity of about 3.8% of the light intensity of the projector.

Example 9.

The optical device comprises an RGB LED matrix based image projector, wherein the projector is mounted at an angle θ _1s =76° to the normal of an optical element in the form of a transparent screen, the optical element having a structure providing a topologically dark state around the point (615 nm,76 °), and the structure representing a uniform polymer layer of polymethyl methacrylate with a thickness of 95 nm, a uniform gold layer with a thickness of 15 nm, and a uniform polymer layer of polydimethylsiloxane with a thickness of 30 nm on a BK7 optical glass.

The optical element structure is obtained in the manufacturing cycle described below. A layer of 30 nm of polydimethylsiloxane was applied to the optical glass using centrifugation (spin coating), then a layer of 15 nm of gold was applied to the layer using electron beam deposition, and then a layer of 100 nm of polymethyl methacrylate was deposited using centrifugation (spin coating).

The structure acts as an optical differentiator, i.e. the structure will reflect an image boundary having a center wavelength of 615 nm and a half-width of 10 nm (i.e. the structure will also act as a filter for the 610-620 nm wavelength range), where the ratio of the image element boundary reflection intensity to the intensity of the image itself is about 100. That is, the projector will form a clearly visible picture of the boundary of the image element formed by the projector on the screen.

Example 10.

The optical device comprises an RGB LED matrix based image projector, wherein the projector is mounted at an angle θ _1s =51° to the normal of an optical element in the form of a transparent screen, the optical element has a structure providing topologically dark states around points (420 nm,51 °), (459 nm, 42 °), (525 nm,56 °), and the structure represents a uniform polymer layer of polymethyl methacrylate with a thickness of 67 nm, a uniform gold layer with a thickness of 14 nm, and a uniform polymer layer of polydimethylsiloxane with a thickness of 50nm on BK7 optical glass.

The optical element structure is obtained in the manufacturing cycle described below. A layer of 50 nm of polydimethylsiloxane was applied to the optical glass using centrifugation (spin coating), then a layer of 14 nm of gold was applied to the layer using electron beam deposition, and then a layer of 67 nm of polymethyl methacrylate was deposited using centrifugation (spin coating).

The structure acts as an optical differentiator, i.e. the structure will reflect an image boundary having a center wavelength of 420 nm and a half-width of 10 nm (i.e. the structure will also act as a filter for the 415-425 nm wavelength range), where the ratio of the image element boundary reflection intensity to the intensity of the image itself is about 100. That is, the projector will form a clearly visible picture of the boundary of the image element formed by the projector on the screen. This embodiment differs from the other embodiments in that the range of operating wavelengths and angles of the projector is increased due to the three topological points.

Example 11.

The optical device comprises an RGB LED matrix based image projector, wherein the projector is mounted at an angle θ _1s =60° to the normal of an optical element in the form of a transparent screen, the optical element has a structure providing a topologically dark state around the point (450 nm,59 °), and the structure represents a uniform gold layer of thickness 3 nm and a polymer layer of polymethyl methacrylate of thickness 300 nm on sapphire.

The optical element structure is obtained in the manufacturing cycle described below. A layer of 300 nm a of polymethyl methacrylate was deposited on a sapphire substrate using centrifugation (spin coating). A gold layer of 3 nm a was then applied to this layer using electron beam deposition.

The structure acts as an optical differentiator, i.e. the structure will reflect an image boundary having a center wavelength of 450 nm and a half-width of 10 nm (i.e. the structure will also act as a filter for the 445-455 nm wavelength range), where the ratio of the image element boundary reflection intensity to the intensity of the image itself is about 100. That is, the projector will form a clearly visible picture of the boundary of the image element formed by the projector on the screen.

Example 12.

The optical device comprises an RGB LED matrix based image projector, wherein the projector is mounted at an angle θ _1s =70° to the normal to an optical element in the form of a hydrogel contact lens, the optical element having a structure providing a topologically dark state around the point (650 nm,70 °), and the structure is created by forming a 640 nm period diffraction grating from a polymer layer of polymethyl methacrylate with a thickness of 95 nm and a uniform gold layer with a thickness of 15 nm on the lens outer surface.

The resulting structure has a diffraction efficiency of more than 4.7% and a transparency of more than 70% (for wavelengths 645-655 nm). In this case, the projector forms a clearly visible picture on the screen formed by the projector with an intensity of about 4.7% of the light intensity of the projector.

Example 13.

The optical element was manufactured in the form of a polymer film of polymethyl methacrylate having a dielectric permeability of 2.25 and a thickness of 80 nm, on which a gold film having a thickness of 18. 18 nm and a dielectric permeability of 2.25 was coated using an electron beam deposition method. An adhesion layer in the form of graphene is deposited on the gold side using a liquid transfer method. The resulting structure has a diffraction efficiency of over 2% and a transparency of over 80%.

Such optical elements may be mounted on any solid surface and may act as an optical differentiator (the working range of wavelengths and angles will vary slightly depending on the surface being deposited), with an image boundary reflection intensity to image intensity ratio of about 100. That is, the projector will form a clearly visible picture of the boundary of the image element formed by the projector on the screen.

Example 14.

The optical element was manufactured in the form of a polymer film of polymethyl methacrylate having a dielectric permeability of 2.25 and a thickness of 80 nm, on which a gold film having a thickness of 18. 18 nm and a dielectric permeability of 2.25 was coated using an electron beam deposition method. The film was then patterned into a diffraction grating with a period of 648 nm using electron beam lithography. An adhesion layer in the form of graphene is deposited on the gold side using a liquid transfer method. The resulting structure has a diffraction efficiency of more than 3.8% and a transparency of more than 70%. Such an optical element may be mounted on any solid surface and provide a 65 ° bend of 630 nm wavelength light from a light source configured at an angle of 65 ° (for the case where the structure is deposited on BK7 optical glass; the values of operating wavelength and angle will be different for other surfaces but not significant, in the range of ±20 nm and ±10°).

Claim (modification according to treaty 19)

1. An optical device comprising a light source of spectral wavelength lambda _1s implemented as an image projector, and an optical element of planar in the (x, y) plane, normal at an angle theta _1s to the optical axis of the light source, wherein the optical element comprises at least a first optically transparent dielectric layer of thickness d ₁ with a dielectric permeability epsilon ₁, a second layer of absorptive two-dimensional material of thickness d ₂ <100 nm with a dielectric permeability epsilon ₂, and an optically transparent substrate of dielectric permeability epsilon ₃, wherein the layers and substrate are configured to form a topologically dark state point a (lambda ₀,θ₀), wherein the absolute value of the phase phi integral on the closed loop line L of complex scattering amplitude of incident light of wavelength lambda, angle theta on the optical element is:

,

Ds is the derivative in space lambda, theta,

2. The optical device according to claim 1, wherein the thickness of the first layer and/or the second layer is spatially modulated by d ₂=d₂ (x, y).

3. The optical device of claim 1, wherein the second layer has a thickness of no more than 30 nm a.

4. An optical device according to claim 3, characterized in that the second layer is made of gold, copper, silver or aluminium.

5. An optical device according to claim 3, characterized in that the second layer is made of ZnO、TiO₂、ZnS、MgO、BeO、PbF₂、CsI、HfO₂、Sc₂O₃、SiN、GaP、CsPbBr₃、CsPbCl₃、CsPbI₃、GaN、YVO₄、MgAlO、YAlO、LuAlO、AlSb、GaSb、InSb、AlAs、GaAs、InAs、BC、SiC、TiC、VC、CsCl、CuCl、BaF、CeF₃、LaF₃、LiF、SrF₂、LiI、KI、RbI、CaMoO₄、SrMoO₄、PbMoO₄、LiNbO₃、KNbO₃、VN、ZrO₂、GeO₂、TeO₂、WO₃、Fe₂O₃、Y₂O₃、Lu₂O₃、Nb₂O₅、Ta₂O₅、Fe₃O₄、InP、CdSe、PbSe、ZnSe、AgGaS₂、CdGa₂S₄、CdS、CuGaS₂、CdTe、Te、ZnTe、BaTiO₃、Bi₄Ti₃O₁₂、PbTiO₃、SrTiO₃、 diamond, graphite, graphene oxide 、MoS₂、WS₂、MoSe₂、WSe₂、Cd₃As₂、Cd₃Sb₂、Cr₂AlC、Cr₂C、Mn₂AlC、Mo₂C、Mo₂Ga₂C、Mo₃AlC₂、Nb₂AlC、Nb₂C、Nb₄AlC₃、Nb₄C₃、Ta₂C、Ta₄AlC₃、Ti₂AlC、Ti₂AlN、Ti₂C、Ti₂N、Ti₃AlC₂、Ti₃C₂、Ti₃CN、Ti₃SiC₂、Ti₄N₃、V₂AlC、V₂C、V₄AlC₃、V₄C₃、SnS₂、SnSe₂、ReS₂、ReSe₂、hBN、GaSe、Sb₂Te₃、PdS₂、PdSe₂、PtS₂、PtSe₂、GaS、GaTe、Ca(OH)₂、K(FeMg)₃Si₃AlO₁₀(OH)₂、Mg(OH)₂、MnO₂、MoO₃、Sb₂O₃、Sb₂OS₂、Sb₂Se₃、Sb₂S₃、As₂S₃、As₂Te₃、Bi₂O₂Se、Bi₂Se₃、Bi₂TeO₂、BiSbTe₃、Bi₂S₃、Bi₂Te₃、AsP、CdI₂、CdPS₃、CuS、CoPS₃、Cr₂Ge₂Te₆、Cr₂S₃、CrBr₃、CrCl₃、CrGeTe₃、CrPS₄、CrSeBr、CuCrP₂S₆、CuIn₇Se₁₁、FeCl₂、FePS₃、FePSe₃、MoTe₂、GaGeTe、GaInS₃、GaSeTe、GaSSe、GaPS₄、GaSTe、GeAs、GeSe、GeS、GeS₂、GeTe、HfSe₂、HfS₂、HfTe₂、In₂S₃、In₂Se₃、InSe、InTe、InGaSe₂、InSeBr、InSnSe、MnPS₃、MnPSe₃、MoSSe、MoWSe₂、MoWS₂、MoWTe₂、MoNbSe₂、MoO_2.5Cl_0.5、MoReS₂、MoTaSe₂、MoVSe₂、Na₂Co₂TeO₆、Nb₂SiTe₄、NbReS₂、NbReSe₂、NbS₃、Ni₂SiTe₄、Ni₃TeO₆、NiCl₂、NiI₂、NiPS₃、PbI₂、PbTe、PtTe₂、ReMoS₂、ReNbS₂、ReNbSe₂、ReSSe、SbAsS₃、SbSe、SbSI、SiP、SnPSe₃、SnS、Ta₂NiS₅、TaS₂、TaS₃、TaSe₂、TaWSe₂、TlSe、TiBr₃、SnTe₂、TiS₃、TlGaS₂、TlGaSe₂、TlGaTe₂、TlInS₂、WTe₂、WSSe、WNbSe₂、WReSe₂、ZrS₂、ZnIn₂S₄、ZnPS₃、ZnPSe₃、ZrGeTe₄、ZrS₃、ZrSe₂、ZrSe₃、ZrTe₂、ZrTe₃、Cr₂Si₂Te₆、Cr₂Te₃、CrI₃、CrSBr、CrTe₂、Fe₃GeTe₂、Fe₄GeTe₂、TaCo₂Te₂、VS₂、VSe₂、VTe₂、BiSbTeSe、BiTe、CuFeTe、HfTe₅、FeSe、FeTeSe、FeTe、NbS₂、NbSe₂、NbTe₂、NbTe₄、NiTe₂、PdBi₂、PdTe₂、SnTaS₂、TaTe₂、TiTe₂、 Tl₂Ba₂CaCu₂O₈、ZrSiS、CdAs₂、CuSi₂P₃、NbAs₂、PbTaSe₂、Ta₂NiSe₅、Ta₂NiTe₅、Ta₂Se₈I、TaNi₂Te₃、TiS₂、TiSe₂、WNbTe₂、ZnAs₂、ZrTe₅、LaTe₂、NbSe₃、Bi₂SeTe₂、Bi₂Te₂S、BiInTe₃、Bi₂Se_1.5Te_1.5、Bi₄Te_1.5S_1.5、GeBi₂Te₄、PbBi₂Te₄、SnBi₄Te₇、SnSb₂Te₄、NiTe、SbTe、SiTe₂、BiTeI、InSSe、PbSnS₂、TlGaS₃、C₃N₄、Cu₂Te、GeSeTe、MnTe、As₂Se₃、CrPS₃、SnSe、WReS₂、TiBr、BaTiS₃、Al₂O₃、BiFeO₃、Ag₃AsS₃、HgS、 bismuth strontium calcium copper oxide, black arsenic or black phosphorus.

6. The optical device of claim 1, wherein the light source is linearly polarized and monochromatic and has a center wavelength λ _1s.

7. The optical device according to claim 1, characterized in that the phase Φ is the phase of the complex scattering amplitude of the light in the reflection channel, and the optical element is manufactured according to the following conditions:

For s-polarization or p-polarization,

,

Where r ₀₁₂₃ is the reflection factor of the optical element,

,

For s-polarization, it is possible that,

,

For the p-polarization it is possible that,

,

I. j is the index number of the layer,

Epsilon _i is the dielectric permeability of the i-th layer,

D _i is the thickness of the i-th layer,

8. The optical device according to claim 1, characterized in that the phase Φ is the phase of the complex scattering amplitude of the light in the transmission channel, and the optical element is manufactured according to the following conditions:

For s-polarization or p-polarization,

,

Where t ₀₁₂₃ is the transmittance of the optical element,

,

For s-polarization, it is possible that,

,

For the p-polarization it is possible that,

,

I. j is the index number of the layer,

Epsilon _i is the dielectric permeability of the i-th layer,

D _i is the thickness of the i-th layer,

9. An optical element comprising a first optically transparent dielectric layer of thickness d ₁ and a dielectric permeability epsilon ₁ and a second layer of absorbing material of thickness d ₂ and a dielectric permeability epsilon ₂ arranged in that order, characterized in that it is provided with an adhesive layer deposited on the free surface of the first layer or the second layer, wherein the layers are configured to form a topologically dark state point by having the first layer realized as a polymer film of thickness d ₁=0.01-100 µm、ε₁ =1.7-4.0, the second layer being made of a metal of thickness d ₂≤30 nm、|ε₂ |=1-10.

10. An optical element according to claim 9, characterized in that the second layer is made of gold, copper, silver or aluminium.

11. An optical element according to claim 9, characterized in that the thickness of the second layer is spatially modulated.

12. An optical element according to claim 11, characterized in that the second layer is manufactured in the form of a diffraction grating.

Claims

1. An optical device comprising a light source having a wavelength of λ _1s in the spectrum and being implemented as an image projector, and an optical element that is planar in the (x,y) plane and whose normal forms an angle θ _1s with the optical axis of the light source, wherein the optical element comprises at least a first optically transparent dielectric layer with a thickness of d ₁ and a dielectric conductivity of ε ₁ , a second absorbing two-dimensional material layer with a thickness of d ₂ < 100 nm and a dielectric conductivity of ε ₂ , and an optically transparent substrate with a dielectric conductivity of ε ₃ , wherein the layers and the substrate are configured to form a topological dark state point A (λ ₀ , θ ₀ ), wherein the absolute value of the phase φ integral of the complex scattering amplitude of incident light with wavelength λ and angle θ on the optical element along the closed line L is:

,

Where L is an ellipse centered at point A ( _λ0 , _θ0 ), with semi-axis _λL = 10 nm and _θL = 5°.

ds is the differential in the space λ, θ.

Furthermore, the light source's λ _1s and θ _1s are located within the enclosing line L.

2. The optical device according to claim 1, wherein the thickness of the first layer and/or the second layer is spatially modulated: _d2 = _d2 (x,y).

3. The optical device according to claim 1, wherein the thickness of the second layer does not exceed 30 nm.

4. The optical device according to claim 3, wherein the second layer is made of gold, copper, silver or aluminum.

5. The optical _device according to claim 3, characterized in that the second layer comprises ZnO, _TiO2 , ZnS, MgO, BeO, _PbF2 , CsI, _HfO2 , _Sc2O3 , SiN, GaP, CsPbBr3, _CsPbCl3 , _CsPbI3 , GaN _, _YVO4 , MgAlO, YAlO, LuAlO, AlSb, GaSb, InSb, AlAs, GaAs, InAs, BC, SiC, TiC, VC, CsCl, CuCl, BaF, _{CeF3, LaF3} _, LiF, _SrF2 , LiI, KI, RbI, _CaMoO4 , _SrMoO4 , _PbMoO4 , _LiNbO3 , _KNbO3 , VN, _ZrO2 , _GeO2 , and _TeO2. _WO3 , _Fe2O3 , _Y2O3 _, _Lu2O3 , _Nb2O5 , _Ta2O5 , _Fe3O4 , InP, CdSe, PbSe, ZnSe, _AgGaS2 , _CdGa2S4 , CdS, _CuGaS2 , CdTe, _Te , ZnTe, _BaTiO3 , Bi4Ti3O12, _PbTiO3 , _SrTiO3 _, _Diamond , Graphite, Graphene, Graphene Oxide _, _MoS2 , _WS2 _, _MoSe2 _, _WSe2 , _Cd3As2 _, _Cd3Sb2 _, _Cr2AlC _, _Cr2C _, _Mn2AlC _, _Mo2C _, _Mo2Ga2C , _Mo3AlC2 _, _Nb2 AlC, Nb ₂ C, Nb ₄ AlC ₃ , Nb ₄ C ₃ , Ta ₂ C, Ta ₄ AlC ₃ , Ti ₂ AlC, Ti ₂ AlN, Ti ₂ C, Ti ₂ N, Ti ₃ AlC ₂ , Ti ₃ C ₂ , Ti ₃ CN, Ti ₃ SiC ₂ , Ti ₄ N ₃ , V ₂ AlC, V ₂ C, V ₄ AlC ₃ , V ₄ C ₃ , SnS ₂ , SnSe ₂ , ReS ₂ , ReSe ₂ , hBN, GaSe, Sb ₂ Te ₃ , PdS ₂ , PdSe ₂ , PtS ₂ , PtSe ₂ , GaS, GaTe, Ca(OH) ₂ , K(FeMg) ₃ Si ₃ AlO ₁₀ (OH) _2.Mg (OH) ₂ , MnO ₂ , MoO ₃ , Sb ₂ O ₃ , Sb ₂ OS ₂ , Sb ₂ Se ₃ , Sb ₂ S ₃ , As ₂ S ₃ , As ₂ Te ₃ , Bi ₂ O ₂ Se, Bi ₂ Se ₃ , Bi ₂ TeO ₂ , BiSbTe ₃ , Bi ₂ S ₃ , Bi ₂ Te ₃ , AsP, CdI ₂ , CdPS ₃ , CuS, CoPS ₃ , Cr ₂ Ge ₂ Te ₆ , Cr ₂ S ₃ , CrBr ₃ , CrCl ₃ , CrGeTe ₃ , CrPS ₄ , CrSeBr, CuCrP ₂ S ₆ , CuIn ₇ Se ₁₁ , FeCl ₂ , FePS ₃ , FePSe ₃ , MoTe ₂ , GaGeTe, GaInS ₃ , GaSeTe, GaSSe, GaPS ₄ , GaSTe, GeAs, GeSe, GeS, GeS ₂ , GeTe, HfSe ₂ , HfS ₂ , HfTe ₂ , In ₂ S ₃ , In ₂ Se ₃ , InSe, InTe, InGaSe ₂ , InSeBr, InSnSe, MnPS ₃ , MnPSe ₃ , MoSSe, MoWSe ₂ , MoWS ₂ , MoWTe ₂ , MoNbSe ₂ , MoO _2.5 Cl _0.5 , MoReS ₂ , MoTaSe ₂ , MoVSe ₂ , Na ₂ Co ₂ TeO ₆ , Nb ₂ SiTe ₄ , NbReS ₂ , NbReSe ₂ , NbS ₃ , Ni ₂ SiTe _4. Ni ₃ TeO ₆ , NiCl ₂ , NiI ₂ , NiPS ₃ , PbI ₂ , PbTe, PtTe ₂ , ReMoS ₂ , ReNbS ₂ , ReNbSe ₂ , ReSSe, SbAsS ₃ , SbSe, SbSI, SiP, SnPSe ₃ , SnS, Ta ₂ NiS ₅ , TaS ₂ , TaS ₃ , TaSe ₂ , TaWSe ₂ , TlSe, TiBr ₃ , SnTe ₂ , TiS ₃ , TlGaS ₂ , TlGaSe ₂ , TlGaTe ₂ , TlInS ₂ , WTe ₂ , WSSe, WNbSe ₂ , WReSe ₂ , ZrS ₂ , ZnIn ₂ S ₄ , ZnPS ₃ , ZnPSe ₃ , ZrGeTe ₄ , ZrS _3. ZrSe ₂ , ZrSe ₃ , ZrTe ₂ , ZrTe ₃ , Cr ₂ Si ₂ Te ₆ , Cr ₂ Te ₃ , CrI ₃ , CrSBr, CrTe ₂ , Fe ₃ GeTe ₂ , Fe ₄ GeTe ₂ , TaCo ₂ Te ₂ , VS ₂ , VSe ₂ , VTe ₂ , BiSbTeSe, BiTe, CuFeTe, HfTe ₅ , FeSe, FeTeSe, FeTe, NbS ₂ , NbSe ₂ , NbTe ₂ , NbTe ₄ , NiTe ₂ , PdBi ₂ , PdTe ₂ , SnTaS ₂ , TaTe ₂ , TiTe ₂ , Tl ₂ Ba ₂ CaCu ₂ O ₈ , ZrSiS, CdAs ₂ , CuSi ₂ P ₃ , NbAs ₂ , PbTaSe ₂ , Ta ₂ NiSe ₅ , Ta ₂ NiTe ₅ , Ta ₂ Se ₈ I, TaNi ₂ Te ₃ , TiS ₂ , TiSe ₂ , WNbTe ₂ , ZnAs ₂ , ZrTe ₅ , LaTe ₂ , NbSe ₃ , Bi ₂ SeTe ₂ , Bi ₂ Te ₂ S, BiInTe ₃ , Bi ₂ Se _1.5 Te _1.5 , Bi ₄ Te _1.5 S _1.5 , GeBi ₂ Te ₄ , PbBi ₂ Te ₄ , SnBi ₄ Te ₇ , SnSb ₂ Te ₄ , NiTe, SbTe, SiTe ₂ , BiTeI, InSSe, PbSnS ₂ , TlGaS ₃ , C ₃ N ₄ , Cu ₂ Made from Te, GeSeTe, MnTe, As ₂ Se ₃ , CrPS ₃ , SnSe, WReS ₂ , TiBr, BaTiS ₃ , Al ₂ O ₃ , BiFeO ₃ , Ag ₃ AsS ₃ , HgS, bismuth strontium calcium copper oxide, black arsenic or black phosphorus.

6. The optical device according to claim 1, wherein the light source is linearly polarized and monochromatic, and the center wavelength is λ _1s .

–For s-polarization or p-polarization

,

Where r _0123 is the reflectance factor of the optical element.

,

–For s-polarization,

,

–For p-polarization,

,

i and j are the layer index numbers.

ε _i is the permittivity of the i- th layer.

d _i is the thickness of the i - th layer.

ε ₀ is the permittivity of the medium from which the light originates.

8. The optical device according to claim 1, wherein the phase φ is the phase of the complex scattering amplitude of the light in the transmission channel, and the optical element is manufactured according to the following conditions:

–For s-polarization or p-polarization

,

Where t _{0123} is the transmittance of the optical element.

,

–For s-polarization,

,

–For p-polarization,

,

i and j are the layer index numbers.

ε _i is the permittivity of the i-th layer.

d _i is the thickness of the i-th layer.

9. An optical element comprising a first optically transparent dielectric layer of thickness _d1 and dielectric conductivity _ε1 and a second absorbing material layer of thickness _d2 and dielectric conductivity _ε2 arranged sequentially, characterized in that it is provided with an adhesive layer deposited on a free surface of the first layer or the second layer, wherein the layer is configured to form topological dark states by making the first layer a polymer film of thickness _d1 = 0.01-100 µm and _ε1 = 1.7-4.0, and the second layer being made of a metal of thickness _d2 ≤ 30 nm and | _ε2 | = 1-10.

10. The optical element according to claim 9, wherein the second layer is made of gold, copper, silver or aluminum.

11. The optical element according to claim 9, wherein the thickness of the second layer is spatially modulated.

12. The optical element according to claim 11, wherein the second layer is manufactured in the form of a diffraction grating.