CN120858665A - Light-emitting device - Google Patents
Light-emitting deviceInfo
- Publication number
- CN120858665A CN120858665A CN202480003812.3A CN202480003812A CN120858665A CN 120858665 A CN120858665 A CN 120858665A CN 202480003812 A CN202480003812 A CN 202480003812A CN 120858665 A CN120858665 A CN 120858665A
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- China
- Prior art keywords
- light
- light emitting
- resin
- emitting device
- emitting elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
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- Led Device Packages (AREA)
Abstract
本发明的发光装置具有：基板；多个第1发光元件，它们以形成沿第1方向延伸的多个第1发光元件组的方式贴装于所述基板的上表面；第1树脂，其配置成覆盖所述多个第1发光元件各自的侧面的至少一部分；以及多个第2发光元件，它们以与所述多个第1发光元件组邻接的方式进行贴装；所述多个第1发光元件各自的4个侧面中的任一个侧面的法线方向与所述第1方向所成的角度θ为15度以上且75度以下。
The light-emitting device of the present invention comprises: a substrate; a plurality of first light-emitting elements mounted on the upper surface of the substrate to form a plurality of first light-emitting element groups extending along a first direction; a first resin configured to cover at least a portion of a side surface of each of the plurality of first light-emitting elements; and a plurality of second light-emitting elements mounted adjacent to the plurality of first light-emitting element groups; an angle θ formed between a normal direction of any one of the four side surfaces of each of the plurality of first light-emitting elements and the first direction is greater than or equal to 15 degrees and less than or equal to 75 degrees.
Description
Technical Field
The present disclosure relates to a light emitting device.
Background
A light emitting device is known in which a plurality of LED chips are arranged in groups in a vertical stripe shape or a mosaic shape to form a plurality of light emitting element groups, and the plurality of light emitting element groups are covered with a plurality of types of phosphor layers having different color temperatures of emitted light, respectively (for example, refer to japanese patent application laid-open No. 2014-45089 (hereinafter referred to as patent document 1)). The light-emitting device described in patent document 1 can improve the color mixing property of a plurality of different lights emitted from a plurality of light-emitting element groups.
Disclosure of Invention
However, in the light-emitting device described in patent document 1, since the plurality of types of phosphor layers cover the plurality of light-emitting element groups in a vertically striped or mosaic shape, the interval between the plurality of light-emitting element groups becomes large, and the miniaturization is not easy.
Accordingly, an object of the present disclosure is to provide a light emitting device capable of narrowing intervals of a plurality of light emitting element groups.
The light emitting device includes a substrate, a plurality of 1 st light emitting elements mounted on an upper surface of the substrate so as to form a plurality of 1 st light emitting element groups extending in a1 st direction, a1 st resin disposed so as to cover at least a part of each side surface of the plurality of 1 st light emitting elements, and a plurality of 2 nd light emitting elements mounted so as to be adjacent to the plurality of 1 st light emitting element groups, wherein an angle [ theta ] formed between a normal direction of any one of 4 side surfaces of each of the plurality of 1 st light emitting elements and the 1 st direction is 15 DEG to 75 DEG.
In the light-emitting device of the present disclosure, the angle θ is preferably 30 degrees or more and 60 degrees or less.
In the light-emitting device of the present disclosure, the 1 st resin preferably contains the 1 st phosphor and is disposed so as to cover the upper surfaces of the 1 st light-emitting elements.
The light-emitting device of the present disclosure preferably further includes a barrier material disposed around the 1 st light-emitting elements and the 2 nd light-emitting elements, and a2 nd resin disposed inside the barrier material so as to cover the 1 st light-emitting elements, the 2 nd light-emitting elements, and the 1 st resin.
In addition, in the light emitting device of the present disclosure, it is preferable that the 2 nd resin contains a 2 nd phosphor different from the 1 st phosphor.
In addition, in the light emitting device of the present disclosure, it is preferable that the 2 nd resin contains a diffusion material.
The light-emitting device of the present disclosure preferably further includes a 3 rd resin, wherein the 3 rd resin contains a 3 rd phosphor, is disposed so as to cover the upper surface and the side surfaces of each of the plurality of 2 nd light-emitting elements, and the plurality of 2 nd light-emitting elements are disposed so as to form a plurality of 2 nd light-emitting element groups extending in the 1 st direction, and an angle formed between a normal direction of any one of 4 side surfaces of each of the plurality of 2 nd light-emitting elements and the 1 st direction is 15 degrees or more and 75 degrees or less.
The light-emitting device of the present disclosure preferably further includes a reflective resin disposed between the barrier material and the end portion in the 1 st direction of each of the 1 st light-emitting element groups and the 2 nd light-emitting element groups.
In the light-emitting device of the present disclosure, the 1 st resin is preferably further disposed between the end portion of each of the 1 st light-emitting element groups in the 1 st direction and the barrier material.
In the light-emitting device of the present disclosure, it is preferable that an angle formed by a normal direction of any one of 4 side surfaces of each of the plurality of 2 nd light-emitting elements and the 1 st direction is equal to or smaller than the angle θ.
Further, in the light-emitting device of the present disclosure, it is preferable that the plurality of 1 st light-emitting elements have a square planar shape.
Further, the light emitting device of the present disclosure preferably further has a bonding wire connecting the plurality of 1 st light emitting elements to each other, and a transparent resin film formed at least in part between the bonding wire and the upper surface of the substrate.
In the light-emitting device of the present disclosure, it is preferable that a minimum value of an angle formed by the extending direction of the bonding wire and the 1 st direction in a plan view is smaller than the angle θ.
The light emitting device of the present disclosure can provide a light emitting device capable of narrowing the interval of a plurality of light emitting element groups.
Drawings
Fig. 1 (a) is a plan view of the light emitting device of embodiment 1, and fig. 1 (b) is a sectional view of A-A' of the light emitting device shown in fig. 1 (a).
Fig. 2 is an enlarged view of the area indicated by B in fig. 1 (a).
Fig. 3 is a flowchart showing a process for manufacturing the light-emitting device shown in fig. 1 (a).
Fig. 4 is a diagram for explaining the 1 st resin placement step shown in fig. 3.
Fig. 5 (a) is a graph showing a relationship between the drop amount D and the maximum width W when the value of the angle θ is 0 °, fig. 5 (b) is a graph showing a relationship between the drop amount D and the maximum width W when the value of the angle θ is 15 °, fig. 5 (c) is a graph showing a relationship between the drop amount D and the maximum width W when the value of the angle θ is 30 °, and fig. 5 (D) is a graph showing a relationship between the drop amount D and the maximum width W when the value of the angle θ is 45 °.
Fig. 6 (a) is a diagram showing the maximum width W when the drop amount D is D1, fig. 6 (b) is a diagram showing the maximum width W when the drop amount D is D2, and fig. 6 (c) is a diagram showing the maximum width W when the drop amount D is D3.
Fig. 7 (a) is a plan view of a light-emitting device according to modification 1 of embodiment 1, and fig. 7 (b) is a sectional view of A-A' of the light-emitting device shown in fig. 7 (a).
Fig. 8 (a) is a plan view of a light-emitting device according to modification 2 of embodiment 1, and fig. 8 (b) is a sectional view of A-A' of the light-emitting device shown in fig. 8 (a).
Fig. 9 (a) is a plan view of the light emitting device according to embodiment 2, and fig. 9 (b) is a sectional view of the light emitting device A-A' shown in fig. 9 (a).
Fig. 10 (a) is a plan view of the light emitting device according to embodiment 3, and fig. 10 (b) is a sectional view of the light emitting device shown in fig. 10 (a) taken along line A-A'.
Fig. 11 (a) is a plan view of the light-emitting device according to embodiment 4, and fig. 11 (b) is a sectional view of the light-emitting device shown in fig. 11 (a) taken along line A-A'.
Fig. 12 is a view showing a transparent resin film formed between a bonding wire and an upper surface of a substrate.
Fig. 13 (a) is a plan view of the light-emitting device according to embodiment 5, and fig. 13 (b) is a sectional view of the light-emitting device shown in fig. 13 (a) taken along line A-A'.
Fig. 14 (a) is a plan view of the light-emitting device according to embodiment 6, and fig. 14 (b) is a sectional view of the light-emitting device shown in fig. 14 (a) taken along line A-A'.
Fig. 15 is a flowchart showing a process for manufacturing the light-emitting device shown in fig. 14 (a).
Fig. 16 (a) is a plan view of a light emitting device according to modification 1 of embodiment 6, fig. 16 (B) is a cross-sectional view of the light emitting device shown in fig. 16 (a) taken along line A-A ', and fig. 16 (c) is a cross-sectional view of the light emitting device shown in fig. 16 (a) taken along line B-B'.
Detailed Description
Various embodiments of the present disclosure will be described below with reference to the accompanying drawings. Note that the technical scope of the present disclosure is not limited to the embodiments, but covers the invention described in the claims and the equivalents thereof.
(Light-emitting device of embodiment 1)
Fig. 1 (a) is a plan view of the light-emitting device 1 of embodiment 1, and fig. 1 (b) is a sectional view of the light-emitting device 1 shown in fig. 1 (a) taken along line A-A'.
The light-emitting device 1 includes a substrate 10, a plurality of light-emitting elements 11A and 11B mounted on the substrate 10, a1 st resin 12, a 2 nd resin 13, a barrier material 14, and bonding wires 15. The plurality of light emitting elements 11A are also referred to as 1 st light emitting element, and the plurality of light emitting elements 11B are also referred to as 2 nd light emitting element. In fig. 1, the 2 nd resin 13 is indicated by a broken line.
The substrate 10 is a flat substrate made of an insulating resin such as glass epoxy resin or ceramic. The substrate 10 has a square planar shape, and the 1 st electrode pair 16A and 16B and the 2 nd electrode pair 17A and 17B are disposed on the upper surface. The substrate 10 may be formed of a mounting substrate formed of a member having high thermal conductivity such as aluminum, and an insulating circuit substrate formed with a wiring pattern including the 1 st electrode pair 16A and 16B and the 2 nd electrode pair 17A and 17B.
The 1 st electrode pair 16A and 16B and the 2 nd electrode pair 17A and 17B are formed on the upper surface of the substrate 10 by a conductive member such as a gold plating member, and supply power supplied from an external power source (not shown) to the anode terminal and the cathode terminal of each of the plurality of light emitting elements 11A and 11B. A mounting region 10a is formed in the center of the substrate 10, and the mounting region 10a has a substantially rectangular planar shape and is provided for mounting the plurality of light emitting elements 11A and 11B. The planar shape of the mounting region 10a is not limited to a rectangular shape, and may be, for example, an elliptical shape or a polygonal shape.
The light emitting elements 11A and 11B are LED (LIGHT EMITTING Diode) chips that emit blue light. The total number of light emitting elements 11A and 11B arranged in the mounting region 10a is 16. The upper surfaces of the light emitting elements 11A and 11B each have a square shape with a length of 650 μm on one side in plan view, and the light emitting elements 11A and 11B are mounted on the mounting region 10a of the substrate 10. The light-emitting colors and the number of the light-emitting elements 11A and 11B are not limited to the above, and any other types of light-emitting colors and any number may be used. The upper surfaces of the light emitting elements 11A and 11B may have a rectangular shape other than square in plan view.
The upper surface of the substrate 10 is covered with a solder resist 18 to prevent short circuit or the like, except for a part of the 1 st electrode pair 16A and 16B and the 2 nd electrode pair 17A and 17B, and the mounting region 10 a.
The 1 st resin 12 contains a fluorescent material called 1 st fluorescent material in a transparent resin such as a silicone resin. The 1 st phosphor may contain garnet phosphors (e.g., YAG (Y 3(Al,Ga)5O12:Ce3+) and LuAG) activated with cerium, nitride phosphors (e.g., CASN and SCACN ((Sr, ca) AlSiN 3:Eu2+)) activated with europium, or fluoride phosphors (e.g., KSF) activated with manganese. The 1 st phosphor mainly absorbs blue light emitted from the light-emitting element 11A and emits red, green, yellow, and other light. The 1 st resin 12 is formed by curing under heat. The 1 st resin 12 is disposed so as to cover the upper surfaces and side surfaces of the plurality of light emitting elements 11A.
The 2 nd resin 13 is also called a sealing material, and is a transparent resin such as silicone resin filled in the space on the mounting region 10a inside the barrier material 14, and seals the plurality of light emitting elements 11A and 11B and the 1 st resin 12. The 2 nd resin 13 contains a phosphor, which is also called a2 nd phosphor, unlike the 1 st phosphor, and a diffusion material. The 2 nd phosphor is, for example, YAG, absorbs blue light emitted from the light emitting elements 11A and 11B, and emits red, green, yellow, or the like light. The color of the light emitted from the 2 nd phosphor is different from the color of the light emitted from the 1 st phosphor. The 2 nd phosphor contained in the 2 nd resin 13 may be dispersed or precipitated in the 2 nd resin 13. The diffusion material diffuses light emitted from the light emitting elements 11A and 11B, the 1 st phosphor, and the 2 nd phosphor. The 2 nd resin 13 may contain the 2 nd phosphor without a diffusion material, may contain the diffusion material without the 2 nd phosphor, and may contain neither the 2 nd phosphor nor the diffusion material.
The light-emitting device 1 has 2 rows of 1 st light-emitting element groups 21, and the 1 st light-emitting element groups 21 are formed of 4 light-emitting elements 11A which are covered with the 1 st resin 12 and are arranged in a row so as to extend in a straight line. The light-emitting device 1 includes 2 rows of 2 nd light-emitting element groups 22, each of which is formed of 4 light-emitting elements 11B that are not covered with the 22 st resin 12 and are arranged in a row so as to extend in a straight line adjacent to the 1 st light-emitting element group 21. One of the 2 nd light emitting element groups 22 of the 2 nd columns is formed of the light emitting elements 11B attached between the 1 st light emitting element groups 21 of the 2 nd columns, and the other of the 2 nd light emitting element groups 22 of the 2 nd columns is formed of the light emitting elements 11B attached between one of the 1 st light emitting element groups 21 of the 2 nd columns and the barrier material 14. In the 1 st light-emitting element group 21, 4 light-emitting elements 11A are connected in series between the 1 st electrode pair 16A and 16B by bonding wires 15. In the 2 nd light-emitting element group 22, 4 light-emitting elements 11B are connected in series between the 2 nd electrode pair 17A and 17B by bonding wires 15.
The barrier material 14 is a frame material formed of an opaque silicone resin mixed with white particles as a reflective material, and prevents the 2 nd resin 13 filled in the mounting region 10a from flowing out. The barrier material 14 reflects light emitted from the light-emitting elements 11A, 11B, 1 st phosphor, and 2 nd phosphor.
Fig. 2 is an enlarged view of the area indicated by B in fig. 1 (a). In fig. 2, 2 adjacent light emitting elements 11A and a portion of the 1 st resin 12 configured to cover the 2 light emitting elements 11A are shown. In fig. 2, one of the light emitting elements 11A is referred to as a1 st adjacent light emitting element 11A-1, and the other of the light emitting elements 11A is referred to as a2 nd adjacent light emitting element 11A-2. In fig. 2, the bonding wire 15 and the 1 st resin 12 disposed on the upper surface of the light-emitting element 11A are omitted. In fig. 2, a direction connecting the center point O1 of the upper surface of the 1 st adjacent light emitting element 11A-1 and the center point O2 of the upper surface of the 2 nd adjacent light emitting element 11A-2 is referred to as a1 st direction, and a direction orthogonal to the 1 st direction is referred to as a2 nd direction.
As shown in fig. 2, the 1 st adjacent light emitting element 11A-1 has a1 st side 31s, a2 nd side 32s adjacent to the right side of the 1 st side 31s, a 3 rd side 33s adjacent to the right side of the 2 nd side 32s, and a 4 th side 34s adjacent to the right side of the 3 rd side 33s and adjacent to the left side of the 1 st side 31 s. The 1 st adjacent light emitting element 11A-1 further has a1 st side 31v, a2 nd side 32v, a 3 rd side 33v, and a 4 th side 34v. The 1 st side 31v is disposed between the 1 st side 31s and the 2 nd side 32s, and the 2 nd side 32v is disposed between the 2 nd side 32s and the 3 rd side 33 s. The 3 rd side 33v is disposed between the 3 rd side 33s and the 4 th side 34s, and the 4 th side 34v is disposed between the 4 th side 34s and the 1 st side 31 s. The 2 nd adjacent light emitting element 11A-2 has a 5 th side surface 35s, a 6 th side surface 36s adjacent to the right side of the 5 th side surface 35s, a 7 th side surface 37s adjacent to the right side of the 6 th side surface 36s, and an 8 th side surface 38s adjacent to the right side of the 7 th side surface 37s and adjacent to the left side of the 5 th side surface 35 s. The 2 nd adjacent light emitting element 11A-2 also has a 5 th side 35v, a 6 th side 36v, a 7 th side 37v, and an 8 th side 38v. The 5 th side 35v is disposed between the 5 th side 35s and the 6 th side 36s, and the 6 th side 36v is disposed between the 6 th side 36s and the 7 th side 37 s. The 7 th side 37v is disposed between the 7 th side 37s and the 8 th side 38s, and the 8 th side 38v is disposed between the 8 th side 38s and the 5 th side 35 s.
The 1 st adjacent light emitting element 11A-1 and the 2 nd adjacent light emitting element 11A-2 are arranged such that, when the angle formed by the normal direction V1 of the 1 st side surface 31s and the 1 st direction is set to the angle θ in plan view, the value of the angle formed by the normal direction V2 of the 5 th side surface 35s and the 1 st direction is also the same as the angle θ. In the present embodiment, the angle θ is 45 °, and the distance between the point O1 and the point O2 is 1060 μm, for example. 1060 μm is a distance at which mounting can be stably performed when light emitting elements having 650 μm on one side are arranged such that the angle θ becomes 45 ° in the light emitting element mounting step.
A space 30 is provided between the 1 st adjacent light emitting element 11A-1 and the 2 nd adjacent light emitting element 11A-2, and the space 30 has a1 st side 31s, a 2 nd side 32s, a 7 th side 37s, an 8 th side 38s, a virtual rectangular surface having a 3 rd side 32v and a6 th side 36v as 2 sides facing each other, and a virtual rectangular surface having a 4 th side 34v and an 8 th side 38v as 2 sides facing each other as sides, and an upper surface of the substrate 10 as a bottom surface.
Resin 1 st 12 before curing is dropped onto the bottom surface of the space 30. The 1 st resin 12z before curing, which is dropped onto the bottom surface of the space 30, fills the space 30 while wetting and diffusing among the bottom surface, the 1 st side 31s, the 2 nd side 32s, the 7 th side 37s, and the 8 th side 38s of the space 30. The 1 st resin 12 before curing filled in the space 30 gradually wets and spreads in the 2 nd direction due to the capillary phenomenon occurring between the 1 st side 31s and the 8 th side 38s and the capillary phenomenon occurring between the 2 nd side 32s and the 7 th side 37 s. When the amount of the 1 st resin 12 before curing which is dropped into the space 30 exceeds a predetermined amount, the convex shapes 30a and 30b which hold the 1 st resin 12 before curing by surface tension are formed outside the space 30 in a plan view. When the 1 st resin 12 is cured by heating or the like, the 1 st resin 12 forms a1 st resin region 30c having convex shapes 30a and 30b.
The 1 st resin region 30c protrudes with a maximum width W in the 2 nd direction at a position intermediate between the 1 st adjacent light emitting element 11A-1 and the 2 nd adjacent light emitting element 11A-2. The value of the maximum width W varies according to the angle θ and the drop amount D. The dropping amount D is the amount of the 1 st resin 12 before curing dropped to the bottom surface of the space 30.
The light emitting elements 11B of the 2 nd light emitting element group 22 adjacent to the 1 st light emitting element group 21 in the 2 nd direction are arranged so as to be isolated from the 1 st resin region 30 c. By disposing the light-emitting element 11B so as to be isolated from the 1 st resin region 30c, the 1 st resin 12 is less likely to contact the light-emitting element 11B, and the shape of the 1 st resin 12 forming the 1 st resin region 30c is maintained at the time of manufacture. Further, the light emitting elements 11B of the 2 nd light emitting element group 22 adjacent to the 1 st light emitting element group 21 in the 2 nd direction are preferably arranged so as to be spaced apart from the 1 st resin region 30c protruding in the maximum width W in the 2 nd direction.
By narrowing the maximum width W of the 1 st resin region 30c, the separation distance between the light emitting element 11A forming the 1 st light emitting element group 21 and the light emitting element 11B forming the 2 nd light emitting element group 22 can be narrowed. By narrowing the maximum width W, the interval between the 1 st light emitting element group 21 and the 2 nd light emitting element group 22 can be narrowed.
Fig. 3 is a flowchart showing a process for manufacturing the light-emitting device 1.
First, in the substrate preparation step, the substrate 10 on which the 1 st electrode pair 16A and 16B and the 2 nd electrode pair 17A and 17B are arranged is prepared (S1). Next, in the light-emitting element mounting step, the plurality of light-emitting elements 11A and 11B are mounted on the mounting region 10a of the substrate 10 (S2). Next, in the wire bonding step, the 1 st electrode pair 16A and 16B is connected via the plurality of light emitting elements 11A and the bonding wires 15, and the 2 nd electrode pair 17A and 17B is connected via the plurality of light emitting elements 11B and the bonding wires 15 (S3).
Next, in the barrier material disposing step, the barrier material 14 is disposed around the 1 st light emitting element group 21 and the 2 nd light emitting element group 22 (S4).
Next, in the 1 st resin placement step, the 1 st resin 12 before the reinforcement is dropped from a nozzle of a dropping device (not shown) to a proper extent so as to cover the plurality of light emitting elements 11A. Thereafter, the 1 st resin 12 is cured by a predetermined heat treatment (S5). The 1 st resin 12 includes a silicone resin, a scattering material, a YAG phosphor, a SCASN phosphor, and a thickener. The 1 st resin 12 before curing had a viscosity coefficient of 98pa·s.
Fig. 4 is a diagram for explaining the 1 st resin placement step. In the 1 st resin placement step shown in S5 in fig. 3, positions 12a to 12d indicated by a symbol "+" shown in fig. 4 indicate positions and orders of dropping the 1 st resin 12 from a nozzle of a dropping device (not shown) in a region shown in B in fig. 1 (a). Specifically, the nozzle moves in the order of the positions 12a, 12B, 12c, and 12d in the region indicated by B, and drops a predetermined drop amount of the 1 st resin 12 before curing at each of the positions 12a, 12B, 12c, and 12 d.
Finally, in the 2 nd resin placement step, the 2 nd resin 13 before curing is placed inside the barrier material 14 so as to seal the 1 st light emitting element group 21, the 2 nd light emitting element group 22, and the 1 st resin 12. Thereafter, the 2 nd resin 13 is cured by a predetermined heat treatment (S6), and the light emitting device 1 is completed. In the case where the 2 nd phosphor contained in the 2 nd resin 13 is allowed to settle in the 2 nd resin 13, a settling time is set before the heat treatment. In addition, in the case where the 2 nd phosphor contained in the 2 nd resin 13 is dispersed in the 2 nd resin 13, the 2 nd resin 13 before curing is stirred to uniformly distribute the 2 nd phosphor in the 2 nd resin 13 before curing, and curing is performed by heat treatment without setting a settling time.
By the manufacturing process described with reference to fig. 3, the light emitting device 1 capable of emitting white light of warm color with a color temperature of 2200K and white light of cool color with a color temperature of 5000K is manufactured. The white light of the warm color is the 1 st light emitted from the light emitting element 11A included in the 1 st light emitting element group 21 and passing through both the 1 st resin 12 and the 2 nd resin 13. The white light of the cool color is the 2 nd light emitted from the light emitting element 11B included in the 2 nd light emitting element group 22 and passing through the 2 nd resin 13. The color temperatures of the 1 st light and the 2 nd light are determined by adjusting the types and amounts of the 1 st phosphor and the 2 nd phosphor. For example, the 1 st light may have a color temperature of white light of a warm color such as 2700K, and the 2 nd light may have a color temperature of white light of a cool color such as 6500K.
Fig. 5 is a diagram showing the change in maximum width W when the angle θ of the light emitting element 11A and the amount D of the droplet applied to the positions 12b and 12c shown in fig. 4 are changed, which is the same as the light emitting device 1, and fig. 6 is a diagram showing the relationship between the angle θ and the maximum width W when the amount of droplet applied is changed. Fig. 5 (a) shows the relationship between the drop amount D and the maximum width W when the value of the angle θ is 0 °, and fig. 5 (b) shows the relationship between the drop amount D and the maximum width W when the value of the angle θ is 15 °. Fig. 5 (c) shows the relationship between the drop amount D and the maximum width W when the value of the angle θ is 30 °, and fig. 5 (D) shows the relationship between the drop amount D and the maximum width W when the value of the angle θ is 45 °. Fig. 6 (a) shows the maximum width W when the dropping amount D is 0.37mg (hereinafter referred to as D1), fig. 6 (b) shows the maximum width W when the dropping amount D is 0.43mg (hereinafter referred to as D2), and fig. 6 (c) shows the maximum width W when the dropping amount D is 0.61mg (hereinafter referred to as D3). The areas shown in fig. 5 (a) - (d) correspond to the areas shown as B in fig. 1 (a). In fig. 6 (a) - (c), the vertical axis represents the maximum width W (in [ μm ]), and the horizontal axis represents the angle θ (in [ °).
In fig. 5 (a), the values of the angle formed by the normal direction V1 of the 1 st side surface 31s and the 1 st direction and the angle θ formed by the normal direction V2 of the 5 th side surface 35s and the 1 st direction in a plan view of the 1 st adjacent light emitting element 11A-1 and the 2 nd adjacent light emitting element 11A-2 are 0 °. The outline of the 1 st resin region 30c when the drop amount of the 1 st resin 12 before curing to the positions 12b and 12c is D1 is denoted by 12-1, and the maximum width of the 1 st resin region 30c is denoted by W-11. The outline of the 1 st resin region 30c when the drop amount of the 1 st resin 12 before curing to the positions 12b and 12c is D2 is denoted by 12-2, and the maximum width of the 1 st resin region 30c is denoted by W-12. The outline of the 1 st resin region 30c when the drop amount of the 1 st resin 12 before curing to the positions 12b and 12c is D3 is denoted by 12-3, and the maximum width of the 1 st resin region 30c is denoted by W-13.
In FIGS. 5 (b) - (D), the maximum widths of the 1 st resin region 30c at the drop amount D1 are represented by W-21, W-31 and W-41, and the maximum widths of the 1 st resin region 30c at the drop amount D2 are represented by W-22, W-32 and W-42. The maximum width of the 1 st resin region 30c at the drop amount D3 is represented by W-23, W-33 and W-43.
When the value of the angle θ is θ1, the maximum width W becomes the same value as when the value of the angle θ is |θ1| when θ1 is 0 ° or less.
Regarding the value θ1 of the angle θ, when θ1 is 90 ° or more and 180 ° or less, the maximum width W becomes the same value as when the value of the angle θ is (180 ° - θ1). Further, when θ1 is 180 ° or more and 270 ° or less, the maximum width W becomes the same value as when the value of the angle θ is (θ1 to 180 °). Further, when θ1 is 270 ° to 360 °, the maximum width W becomes the same value as when the value of the angle θ is (360 ° - θ1).
In the present embodiment, since the 1 st adjacent light emitting element 113A-1 and the 2 nd adjacent light emitting element 113A-2 have a square shape in a plan view, when the value θ1 of the angle θ is 45 ° or more and 90 ° or less, the maximum width W becomes the same value as when the value of the angle θ is (90 ° - θ1).
As shown in fig. 6 (a) - (c), the maximum width W is very large when the angle θ is less than 15 °. When the angle θ is smaller than 15 °, the volume of the space 30 is small, so that the convex shapes 30a and 30b protrude so that the maximum width W increases. Further, when the angle θ is 15 ° or more and less than 30 °, the maximum width W is reduced, and when the angle θ is 30 ° or more and 45 ° or less, the maximum width W is further reduced.
In fig. 6 (a) - (c), the maximum width W becomes the same value as the maximum width W when the angle θ exceeds 45 ° and is 60 °, 75 ° and 90 °.
To narrow the maximum width W of the 1 st resin region 30c and narrow the interval between the 1 st light emitting element group 11 and the 2 nd light emitting element group 22 adjacent thereto, the angle θ is preferably 15 ° or more and 75 ° or less, more preferably 30 ° or more and 60 ° or less.
When the light emitting element 11A is square, the maximum width W is smallest when the angle θ is 45 °, so that the angle θ is more preferably in the vicinity of 45 °. Here, the vicinity means a range of ±10°, more preferably a range of ±5° (hereinafter, the "vicinity" related to an angle means a range of ±10°, more preferably a range of ±5°).
The light emitting element 11A may have a rectangular shape in a plan view. When the light emitting element 11A is rectangular in plan view, the length of the short side being a, and the length of the long side being b (i.e., a), the volume of the space 30 is maximized and the maximum width W is minimized when the angle θ between the normal direction of any one of the sides of the 4 light emitting elements 11A, which are one side, and the 1 st direction is arctan (b/a), and therefore the angle θ is preferably in the vicinity of arctan (b/a).
The ratio (b/a) of the length b of the long side to the length a of the short side is preferably 1.0 to 1.4, more preferably 1.0 to 1.1. At a ratio (b/a) of 1.4, the maximum width W is the smallest in the range of the angle θ of 54.5 °, that is, around 45 °, at a ratio (b/a) of 1.1, the maximum width W is the smallest in the range of the angle θ of 47.7 °, that is, more preferably, around 45 °, and at a ratio (b/a) of 1.0, the maximum width W is the smallest in the range of the angle θ of 45 °.
(Light-emitting device according to modification 1 of embodiment 1)
Fig. 7 (a) is a plan view of a light-emitting device 1a according to modification 1 of embodiment 1, and fig. 7 (b) is a cross-sectional view of the light-emitting device shown in fig. 7 (a) taken along line A-A'. In the light emitting device 1a, the same components as those of the light emitting device 1 are denoted by the same reference numerals, and description thereof is omitted.
The light emitting device 1a shown in fig. 7 differs from the light emitting device 1 only in the orientation of 4 light emitting elements 11B in the 2 nd light emitting element group 22 a. In the 2 nd light-emitting element group 22a, 4 light-emitting elements 11B are mounted on the substrate 10 in a row along the 1 st direction, and the normal direction of any one of the 4 side surfaces of each of the 4 light-emitting elements 11B forms an angle of 0 ° with the 1 st direction.
Although the angle formed by the normal direction of any one of the 4 side surfaces of the 4 light emitting elements 11B and the 1 st direction is 0 ° in fig. 7, the angle formed by the normal direction of any one of the 4 side surfaces of the 4 light emitting elements 11A and the 1 st direction may be smaller than θ. By setting the angle formed by the normal direction of any one of the 4 side surfaces of the 4 light emitting elements 11B and the 1 st direction to be smaller than the angle θ, the interval between the 1 st light emitting element group 21 and the 2 nd light emitting element group 22a can be further narrowed. Further, an angle formed by the normal direction of any one of the 4 side surfaces of the 4 light emitting elements 11B and the 1 st direction is more preferably in the vicinity of 0 °.
The light emitting element 11B may have a rectangular shape in a plan view. When the light-emitting element 11B has a rectangular shape having a short side and a long side in plan view, the angle formed by the normal direction of any one of the side surfaces of the 4 light-emitting elements 11B on the short side and the 1 st direction is more preferably in the vicinity of 0 °.
(Light-emitting device according to modification 2 of embodiment 1)
Fig. 8 (a) is a plan view of a light-emitting device 1b according to modification 2 of embodiment 1, and fig. 8 (b) is a cross-sectional view of the light-emitting device shown in fig. 8 (a) taken along line A-A'. In the light emitting device 1b, the same components as those of the light emitting device 1 are denoted by the same reference numerals, and description thereof is omitted.
The light-emitting device 1b differs from the light-emitting device 1 only in that it has a 3 rd resin 23 that covers the 2 nd light-emitting element group 22 and contains a 3 rd phosphor. Resin 2 13 seals resin 112 and resin 3 23.
The 3 rd resin 23 contains a phosphor, also referred to as 3 rd phosphor, in a transparent resin such as a silicone resin, and mainly absorbs blue light emitted from the light-emitting element 11B to emit red, green, yellow, and other lights. The color of the light emitted from the 3 rd phosphor is different from the colors of the light emitted from the 1 st phosphor and the 2 nd phosphor. The 3 rd phosphor includes garnet phosphors including YAG and LuAG activated with cerium, nitride phosphors including CASN and SCACN activated with europium, or fluoride phosphors including KSF activated with manganese. The 3 rd resin 23 is cured by heating. By arbitrarily selecting the 1 st phosphor, the 2 nd phosphor, and the 3 rd phosphor, the degree of freedom in selecting the light to be emitted from the light emitting device 1b increases. Further, by setting the angle between the normal direction of any one of the 4 side surfaces of the light emitting element 11B and the 1 st direction to 15 ° or more and 75 ° or less, the maximum width of the 3 rd resin 23 is controlled so that the 2 nd light emitting element group 22 can be disposed close to the 1 st light emitting element group 21. Further, by setting the angle between the normal direction of any one of the 4 side surfaces of the light emitting element 11B and the 1 st direction to 30 ° or more and 60 ° or less, the maximum width of the 3 rd resin 23 can be controlled so that the 2 nd light emitting element group 22 can be further disposed closer to the 1 st light emitting element group 21. When the light-emitting element 11B has a square shape in a plan view, an angle formed between the normal direction of any one of the 4 side surfaces of the light-emitting element 11B and the 1 st direction is more preferably 45 °.
When the light emitting element 11B is rectangular in plan view, the light emitting element 11B preferably has a short side length of a and a long side length of B (i.e., a), and the angle between the normal direction of any one of the short side surfaces and the 1 st direction of the light emitting element 11B is in the vicinity of arctan (B/a).
The ratio (b/a) of the length b of the long side to the length a of the short side is preferably 1.0 to 1.4, more preferably 1.0 to 1.1. At a ratio (b/a) of 1.4, the maximum width W is the smallest in the range of the angle θ of 54.5 °, that is, around 45 °, at a ratio (b/a) of 1.1, the maximum width W is the smallest in the range of the angle θ of 47.7 °, that is, more preferably, around 45 °, and at a ratio (b/a) of 1.0, the maximum width W is the smallest in the range of the angle θ of 45 °.
(Light-emitting device of embodiment 2)
Fig. 9 (a) is a plan view of the light emitting device 2 according to embodiment 2, and fig. 9 (b) is a sectional view of the light emitting device shown in fig. 9 (a) taken along line A-A'. The same components as those of the light emitting device 1 are denoted by the same reference numerals in the light emitting device 2, and description thereof is omitted.
In the light-emitting device 2, the configuration of the 1 st resin 12 is different from that of the light-emitting device 1. In the light-emitting device 1, the 1 st resin 12 is disposed so as to cover the side surfaces and the upper surfaces of the light-emitting elements 11A facing the side surfaces of the adjacent light-emitting elements a, but is not disposed so as to cover the side surfaces of the light-emitting elements 11A facing the barrier material 14. In the light-emitting device 2, the 1 st resin 12 is disposed so as to cover all sides and upper surfaces of the light-emitting element 11A including sides facing the barrier material 14.
The manufacturing method of the light emitting device 2 is different from the manufacturing method of the light emitting device 1 in that in the 1 st resin placement step shown in S5 in fig. 3, the 1 st resin 12 before curing is dropped between the barrier material 14 and the end portion of the 1 st light emitting element group 21. In the method of manufacturing the light emitting device 2, the substrate preparation step, the light emitting element mounting step, the wire bonding step, the barrier material placement step, and the 2 nd resin placement step are the same as those of the method of manufacturing the light emitting device 1, and therefore, description thereof is omitted.
The 1 st resin 12 disposed on the upper surface of the light emitting element 11A adjacent to the barrier material 14 may be cured in a state of protruding from the upper surface toward the barrier material 14, and a protruding portion protruding from the upper surface of the light emitting element 11A toward the barrier material 14 may be formed. In the case of depositing the 2 nd phosphor, when the 1 st resin 12 is formed with a protrusion protruding from the upper surface of the light emitting element 11A toward the barrier material 14, the 2 nd phosphor contained in the 2 nd resin 13 may be deposited on the upper surface of the protrusion without being deposited between the upper surface of the substrate 10 and the lower surface of the protrusion. Since the 2 nd phosphor does not settle between the upper surface of the substrate 10 and the lower surface of the protruding portion, the amount of light emitted from the side surface of the light emitting element 11A on which the protruding portion is formed toward the barrier material 14 is different from the amount of light emitted from the side surface of the light emitting element 11A on which the protruding portion is not formed toward the barrier material 14, which is absorbed by the 2 nd phosphor. Since the amount of light emitted from the side surface of the light emitting element 11A where the protruding portion is formed to the barrier material 14 is not the same as the amount of light emitted from the side surface of the light emitting element 11A where the protruding portion is not formed to the 2 nd phosphor, there is a possibility that color unevenness occurs in the vicinity of the barrier material 14 in the light emitting device 1. In the light-emitting device 2, since the 1 st resin 12 is disposed so as to cover all the side surfaces of the light-emitting element 11A including the side surface facing the barrier material 14, no protruding portion protruding from the upper surface of the light-emitting element 11A toward the barrier material 14 is formed, and there is a low risk of occurrence of color unevenness in the vicinity of the barrier material 14.
The 1 st resin 12 is disposed between the barrier material 14 of the light-emitting device 1 and the 1 st light-emitting element group 21 in the light-emitting device 2. In the light emitting devices 1A and 1b, the 1 st resin 12 may be disposed between the 1 st light emitting element group formed of the light emitting elements 11A and the barrier material, similarly to the light emitting device 2. In the light-emitting device 1B, the 3 rd resin 23 may be disposed between the 2 nd light-emitting element group 22 formed of the light-emitting elements 11B and the barrier material 14.
(Light-emitting device of embodiment 3)
Fig. 10 (a) is a plan view of the light emitting device 3 according to embodiment 3, and fig. 10 (b) is a sectional view of the light emitting device shown in fig. 10 (a) taken along line A-A'. The same components as those of the light emitting device 1 are denoted by the same reference numerals in the light emitting device 3, and description thereof is omitted.
In the light emitting device 3, the shape of the barrier material 14a, the mounting region 10B, the 1 st electrode pair 26A and 26B, and the 2 nd electrode pair 27A and 27B is different from the shape of the barrier material 14, the mounting region 10a, the 1 st electrode pair 16A and 16B, and the 2 nd electrode pair 17A and 17B. The mounting region 10b is a circular region inside the barrier material 14a having a circular planar shape. In addition, in the light emitting device 3, the arrangement of the 1 st resin 12 is different from that of the light emitting device 1. The number of light emitting elements 11A forming the 1 st light emitting element group 21A is 8, and the number of light emitting elements 11A forming the other 1 st light emitting element group 21b is 4. In the 1 st light-emitting element groups 21A and 21b, the light-emitting elements 11A are arranged such that an angle θ formed by the normal direction of any one of the 4 side surfaces and the 1 st direction is 45 °, and are covered with the 1 st resin 12. The 1 st resin 12 is disposed between the barrier material 14a and the 1 st light-emitting element groups 21a and 21 b. A2 nd light-emitting element group 22c formed of the light-emitting elements 11B without being covered with the 1 st resin 12 is arranged between the 1 st light-emitting element groups 21a and 21B. In the 2 nd light-emitting element group 22c, the light-emitting elements 11B are arranged such that the normal direction of any one of the 4 side surfaces makes an angle of 0 ° with the 1 st direction.
The number of the light-emitting elements 11A forming the 1 st light-emitting element group 21A and the number of the light-emitting elements 11A forming the pair of 1 st light-emitting element groups 21B connected in series is 8, which is the same number, and each is connected in series between the 1 st electrode pair 26A and 26B. The 8 light-emitting elements 11B forming the 2 nd light-emitting element group 22c are connected in series between the 2 nd electrode pair 27A and 27B.
The 1 st light-emitting element group 21b is formed of 4 light-emitting elements 11A, and is disposed outside the 1 st light-emitting element group 21A and the 2 nd light-emitting element group 22c, respectively. The light emitting elements 11A forming each of the pair 1 st light emitting element groups 21b are connected in series below the barrier material 14 a. Since the 1 st light emitting element group 21B is disposed separately outside the 1 st light emitting element group 21A and the 2 nd light emitting element group 22c, the light emitting elements 11A and 11B can be disposed equally in the circular mounting region 10B.
The light emitting elements 11A forming the 1 st light emitting element group 21A and 21B and the light emitting element 11B forming the 2 nd light emitting element group 22c may be arranged so as to be offset outward. When the light emitting elements 11A forming the 1 st light emitting element group 21A and 21B and the light emitting element 11B forming the 2 nd light emitting element group 22c are arranged so as to be shifted outward, the light emitting elements 11A and 11B can be uniformly arranged in the circular mounting region 10B.
In the light emitting device 3, the light emitting elements 11A forming the 1 st light emitting element group 21A and 21b are arranged such that the angle θ formed between the normal direction of any one of the 4 side surfaces and the 1 st direction is 15 ° or more and 75 ° or less, so that the interval between the adjacent 2 nd light emitting element groups can be narrowed and arranged.
(Light-emitting device of embodiment 4)
Fig. 11 (a) is a plan view of the light-emitting device 4 of embodiment 4, and fig. 11 (b) is a sectional view of the light-emitting device shown in fig. 11 (a) taken along line A-A'. The same components as those of the light emitting device 1 are denoted by the same reference numerals in the light emitting device 4, and description thereof is omitted.
The light emitting device 4 is different from the light emitting device 1 in having the reflecting resin 40. The reflective resin 40 is formed of an opaque silicone resin mixed with white particles as a reflective material, like the barrier material 14, and is disposed between the barrier material 14 and the 1 st and 2 nd light-emitting element groups 21 and 22.
The manufacturing method of the light emitting device 4 is different from the manufacturing method of the light emitting device 1 in that a reflective resin placement step is provided between the 1 st resin placement step shown in S5 in fig. 3 and the 2 nd resin placement step shown in S6 in fig. 3. In the method of manufacturing the light emitting device 4, the substrate preparation step, the light emitting element mounting step, the wire bonding step, the barrier material placement step, the 1 st resin placement step, and the 2 nd resin placement step are the same as the method of manufacturing the light emitting device 1, and therefore, the description thereof is omitted.
In the reflective resin placement step in the method of manufacturing the light emitting device 4, the reflective resin 40 before curing is dropped from the nozzle of the dropping device (not shown) to the vicinity of the side surfaces of the light emitting elements 11A and 11B disposed at the end portions in the 1 st direction of the 1 st light emitting element group 21 and the 2 nd light emitting element group 22, which are opposed to the barrier material 14, while being kept wet and spread by the tension of the side surfaces. The reflection resin 40 before curing has a viscosity coefficient equal to that of the 1 st resin 12 before curing, and is cured by a predetermined heat treatment.
Since the light emitting device 4 has the reflective resin 40 disposed between the barrier material 14 and the 1 st and 2 nd light emitting element groups 21 and 22, no yellow ring (yellow ring) due to the 2 nd phosphor contained in the 2 nd resin 13 is generated regardless of the distance separating the barrier material 14 from the ends of the 1 st and 2 nd light emitting element groups 21 and 22.
The light-emitting device 4 includes a reflective resin 40 disposed between the barrier material 14 included in the light-emitting device 1 and the 1 st light-emitting element group 21 and the 2 nd light-emitting element group 22. In the light emitting devices 1A and 1B, the reflective resin 40 may be disposed between the 1 st light emitting element group and the 2 nd light emitting element group formed of the light emitting elements 11A and 11B and the barrier material, similarly to the light emitting device 4.
(Modification of the light-emitting device)
The light-emitting device is configured such that synthetic resins such as the 1 st resin 12 and the 2 nd resin 13 are directly disposed on the substrate 10, the light-emitting elements 11A and 11B, and the bonding wires 15. The light-emitting device according to the embodiment may include a transparent resin disposed between the substrate 10, the light-emitting elements 11A and 11B, and the bonding wire 15 and synthetic resins such as the 1 st resin 12 and the 2 nd resin 13. The transparent resin is a film made of a transparent synthetic resin, and the transparent synthetic resin is made of an acrylic resin, a silicone resin, and a fluoride compound. By having the transparent resin, the light-emitting device of the embodiment can prevent the peeling of the light-emitting elements 11A and 11B from the substrate 10 and the defect of the bonding wire 15.
When the light-emitting device of the embodiment has a transparent resin, in the manufacturing process of the light-emitting device of the embodiment, a transparent resin disposing process is performed between the barrier material disposing process shown in S4 and the 1 st resin disposing process shown in S5 in fig. 3. In the transparent resin disposing step, the transparent resin before curing is applied across the entire surfaces of the substrate 10, the light emitting elements 11A and 11B, and the bonding wires 15, and then the substrate 10 is subjected to a heat treatment to dispose the transparent resin.
The light emitting device of the embodiment may have a transparent resin film formed between the bonding wire 15 and the upper surface of the substrate 10. The transparent resin film is formed of the same resin as the transparent resin disposed between the substrate 10, the light emitting elements 11A and 11B, and the bonding wires 15 and the synthetic resin such as the 1 st resin 12 and the 2 nd resin.
Fig. 12 is a view showing a transparent resin film formed between the bonding wire 15 and the upper surface of the substrate 10. Fig. 12 is a diagram corresponding to a diagram of a region shown in B in fig. 1 (a) viewed from the side. In fig. 12, the substrate 10, the 1 st adjacent light emitting element 11A-1 and the 2 nd adjacent light emitting element 11A-2, the bonding wire 15, and the components other than the transparent resin are omitted.
The transparent resin film 19 is formed across the entire surface between the bonding wires 15 connecting the light emitting elements 11A and between the bonding wires 15 connecting the light emitting elements 11B and the substrate 10.
By providing the transparent resin film 19 formed between the bonding wire 15 and the upper surface of the substrate 10, the 1 st resin 12 before curing is likely to accumulate in the vicinity of the bonding wire 15 when the 1 st resin 12 before curing is dropped in the light-emitting device of the embodiment. Since the 1 st resin 12 before curing is easily accumulated in the vicinity of the bonding wire 15, the light emitting device of the embodiment can further reduce the maximum width W of the 1 st resin region 30 c.
The transparent resin film 19 may be formed on at least a part of the bonding wire 15 connecting the light emitting elements 11A and the bonding wire 15 connecting the light emitting elements 11B and the substrate 10. The transparent resin film 19 may be formed so as not to extend over the entire surface between the bonding wire 15 and the substrate 10. Even in the case where the transparent resin film 19 formed between the bonding wire 15 and the substrate 10 is formed with an opening, the maximum width W of the 1 st resin region 30c can be reduced due to the formation of the transparent resin film 19.
(Light-emitting device of embodiment 5)
Fig. 13 (a) is a plan view of the light-emitting device 5 according to embodiment 5, and fig. 13 (b) is a sectional view of the light-emitting device shown in fig. 13 (a) taken along line A-A'. The same components as those of the light-emitting device 1 are denoted by the same reference numerals in the light-emitting device 5, and description thereof is omitted.
The light-emitting device 5 is different from the light-emitting device 1 in having the 1 st fluorescent resin 41. Further, the point of difference from the light emitting device 1 is that the 1 st resin 42 is provided instead of the 1 st resin 12. The 1 st fluorescent resin 41 contains a fluorescent material also called 1 st fluorescent material, like the 1 st resin 12. The type of the phosphor contained in the 1 st fluorescent resin 41 is the same as that contained in the 1 st resin 12.
The 1 st fluorescent resin 41 is disposed so as to cover at least a part of the side surfaces and the upper surfaces of the plurality of light emitting elements 11A. The 1 st fluorescent resin 41 is arranged to cover the upper surfaces of all the light emitting elements 11A, and is arranged to cover the side surfaces of the light emitting elements 11A not opposed to the barrier material 14. The 1 st fluorescent resin 41 is not disposed on the side of the light-emitting element 11A facing the barrier material 14.
The 1 st resin 42 is formed of an opaque silicone resin mixed with white particles as a reflective material, and is a resin that reflects light emitted from the light emitting elements 11A and 11B, and is disposed so as to cover a side surface of the light emitting element 11A facing the barrier material 14, like the barrier material 14. The 1 st resin 42 is disposed between a pair of sides of the 2 light emitting elements 11A disposed so as to be separated as approaching the barrier material 14, like the 1 st resin 12. The 1 st resin 42 is disposed between a pair of sides of the 2 light emitting elements 11B disposed so as to be separated as approaching the barrier material 14, like the 1 st resin 12. The 1 st resin 42 is also disposed between the barrier material 14 and the 1 st end portion in the 1 st direction shown in fig. 2 of each of the 1 st light emitting element groups formed of the light emitting elements 11A and the 2 nd light emitting element groups formed of the light emitting elements 11B.
The manufacturing method of the light emitting device 5 is different from the manufacturing method of the light emitting device 1 in that the 1 st fluorescent resin placement step is provided instead of the 1 st resin placement step shown in S5 in fig. 3. The method for manufacturing the light-emitting device 5 includes a transparent resin film disposing step between the barrier material disposing step S4 shown in fig. 3 and the 1 st resin disposing step S5 shown in fig. 3. In the transparent resin film disposing step, the transparent resin before curing is applied across the entire surfaces of the substrate 10, the light emitting elements 11A and 11B, and the bonding wires 15, and then the substrate 10 is subjected to a heat treatment, so that the transparent resin film is disposed between the bonding wires 15 and the upper surface of the substrate 10. The manufacturing method of the light emitting device 5 is different from the manufacturing method of the light emitting device 1 in that the 1 st resin placement step shown in S5 in fig. 3 and the 2 nd resin placement step shown in S6 in fig. 3 have the 1 st resin placement step. In the method of manufacturing the light-emitting device 5, the substrate preparation step, the light-emitting element mounting step, the wire bonding step, the barrier material placement step, and the 2 nd resin placement step are the same as those of the light-emitting device 1, and therefore, description thereof is omitted.
The 1 st fluorescent resin placement step is the same as the 1 st fluorescent resin placement step shown in S5 in fig. 3 except that the 1 st fluorescent resin 41 before consolidation is dropped in the order of the positions 12a, 12c, and 12d, but the 1 st fluorescent resin 41 before consolidation is not dropped at the position 12b shown in fig. 4.
In the 1 st resin placement step in the method of manufacturing the light-emitting device 5, the 1 st resin 42 before curing is dropped from a nozzle of a dropping device (not shown) to the vicinity of the side surfaces of the light-emitting elements 11A and 11B facing the barrier material 14. The 1 st resin 42 is dropped between a pair of sides of the 2 light emitting elements 11A and 11B arranged so as to be separated as approaching the barrier material 14, as in the 1 st resin 12, while being kept wet and spread by tension between the pair of sides. The 1 st resin 42 before curing has the same viscosity coefficient as the 1 st resin 12 before curing, and is cured by a predetermined heat treatment.
The 1 st resin 42 having reflectivity is disposed between the light emitting elements 11A and 11B and the blocking material 14, so that the light emitted from the light emitting elements 11A and 11B by the light emitting device 5 is not likely to become stray light between the light emitting elements 11A and 11B and the blocking material 14. Since the light emitted from the light emitting elements 11A and 11B does not become stray light between the light emitting elements 11A and 11B and the blocking material 14, the light emitting device 5 is free from a decrease in light emitting efficiency due to stray light.
In the light-emitting device of the embodiment, when the transparent resin film 19 is provided, an angle formed between the 1 st direction and the extending direction of the bonding wire 15 connecting the adjacent 2 light-emitting elements 11A to each other in a plan view is preferably smaller than the angle θ, and more preferably is in the vicinity of 0 °. By making the angle between the extending direction of the bonding wire 15 and the 1 st direction smaller than the angle θ in a plan view, the 1 st resin 12 before reinforcement can be stably dropped in the 1 st resin placement step, so that the variation in the maximum width W can be suppressed. By suppressing the variation in the maximum width W, the light emitting device of the embodiment can narrow the interval between the plurality of light emitting element groups.
In the light-emitting device of the embodiment, when the transparent resin film 19 is provided, the bonding wires 15 connecting the adjacent 2 light-emitting elements 11A to each other are preferably arranged so as to be point-symmetrical about the intermediate point between the centers of the 2 light-emitting elements 11A connected by the bonding wires 15. By disposing the bonding wires 15 so as to be point-symmetrical about the intermediate point between the centers of the connected 2 light emitting elements 11A, the 1 st resin 12 before the reinforcement can be stably dropped in the 1 st resin disposing step, and therefore, the variation in the maximum width W can be suppressed. By suppressing the variation in the maximum width W, the light emitting device of the embodiment can narrow the interval between the plurality of light emitting element groups.
In the light-emitting device of the embodiment, when the transparent resin film 19 is provided, the bonding wires 15 connecting the adjacent 2 light-emitting elements 11A to each other are more preferably arranged so as to be axisymmetric with respect to a center line connecting centers of the 2 light-emitting elements 11A connected by the bonding wires 15. For example, the bonding wires 15 are arranged so as to coincide with the center lines connecting the centers of the light emitting elements 11A, and are thus arranged so as to be axisymmetric with respect to the center lines connecting the centers of the light emitting elements 11A connected by the bonding wires 15. By disposing the bonding wires 15 so that the center lines connecting the centers of the light emitting elements 11A are axisymmetric, the 1 st resin 12 before the reinforcement can be stably dropped in the 1 st resin disposing step in the light emitting device of the embodiment, and therefore, the variation in the maximum width W can be suppressed. By suppressing the variation in the maximum width W, the light emitting device of the embodiment can narrow the interval between the plurality of light emitting element groups.
The 1 st resin is formed by dropping the 1 st resin before the reinforcement of the light emitting device at the positions 12a, 12b, 12c, and 12 d. In the light emitting device of the embodiment, the resin dropped to the positions 12a and 12d may be different from the resin dropped to the positions 12b and 12 c. For example, the resin dropped at locations 12a and 12d may contain a phosphor, and the resin dropped at locations 12b and 12c may contain a reflective material.
The 1 st resin is formed by dropping the 1 st resin before the reinforcement of the light emitting device at the positions 12a, 12b, 12c, and 12 d. In the light-emitting device according to the embodiment, the 1 st resin before curing may be continuously applied in the 1 st direction along the 1 st light-emitting element 11A forming the 1 st light-emitting element group to form the 1 st resin.
When the 1 st resin before curing is formed by continuously coating the 1 st resin in the 1 st direction, the viscosity coefficient of the 1 st resin before curing is preferably 50pa·s or more and 150pa·s or less. The filling amount of the 1 st resin before curing into the space 30 is preferably 0.4mg or more and 0.6mg or less.
In the light-emitting device described above, the barrier material 14 is disposed around the light-emitting elements 11A and 11B, but in the light-emitting device of the embodiment, the barrier material 14 may be omitted. In the light-emitting device of the embodiment, the 1 st resin is held by capillary phenomenon occurring between the side surfaces of the light-emitting element when the barrier material 14 is not provided.
(Light-emitting device of embodiment 6)
Fig. 14 (a) is a plan view of the light-emitting device 6 of embodiment 6, and fig. 14 (b) is a sectional view of the light-emitting device shown in fig. 14 (a) taken along line A-A'.
The light-emitting device 6 includes a substrate 50, a plurality of light-emitting elements 51A and 51B mounted on the substrate 50, a1 st resin 52, a1 st fluorescent sheet 53, and a2 nd fluorescent sheet 54. The substrate 50 has the same structure as the substrate 10, and the 1 st electrode pair 56A and 56B and the 2 nd electrode pair 57A and 57B are disposed on the upper surface.
The 1 st electrode pair 56A and 56B and the 2 nd electrode pair 57A and 57B are formed on the upper surface of the substrate 50 by a conductive member such as a gold plating member, and supply power supplied from an external power source (not shown) to the anode terminal and the cathode terminal of each of the plurality of light emitting elements 51A and 51B.
The light emitting elements 51A and 51B are LED chips that emit blue light. The total number of light emitting elements 51A and 51B mounted on the substrate 50 is 16. The upper surfaces of the light emitting elements 51A and 51B each have a square shape in plan view, and the light emitting elements 51A and 51B are attached to the substrate 50 by face-down connection. The light-emitting colors and the number of the light-emitting elements 51A and 51B are not limited to the above, and any other types of light-emitting colors and any number may be used. The upper surfaces of the light emitting elements 51A and 51B may have a rectangular shape other than square in plan view.
The light emitting elements 51A and 51B are arranged in 4 rows and 4 columns so as to be substantially square in plan view. The light emitting elements 51A and 51B are mounted so that 4 light emitting elements 51A are arranged in the 1 st row 61 and the 3 rd row 63, and 4 light emitting elements 51B are arranged in the 2 nd row 62 and the 4 th row 64. The light emitting elements 51A and 51B are mounted so as to be alternately arranged in each of the 1 st row 65 to the 4 th row 68. The light emitting elements 51A and 51B are each arranged such that the side surfaces thereof are inclined by 45 ° with respect to the row direction and the column direction in which the light emitting elements 51A and 51B are arranged in plan view.
The 4 light emitting elements 51A arranged in the 1 st column 61 and the 3 rd column 63 are connected in series between the 1 st electrode pair 56A and 56B, and the 4 light emitting elements 51B arranged in the 2 nd column 62 and the 4 th column 64 are connected in series between the 2 nd electrode pair 57A and 57B.
The 1 st resin 52 is formed of an opaque silicone resin mixed with white particles as a reflective material. The 1 st resin 52 functions as a sealing material for sealing the light emitting elements 51A and 51B, and also functions as a reflecting material for reflecting light emitted from the light emitting elements 51A and 51B. The outer edge of the 1 st resin 52 is formed because the 1 st resin before curing is held by capillary phenomenon occurring between the side surfaces of the light emitting element.
The 1 st fluorescent sheet 53 is a sheet having a rectangular planar shape and containing a fluorescent substance. The 1 st fluorescent sheet 53 is arranged to cover the upper surface of the light emitting element 11A. The type of the phosphor contained in the 1 st phosphor sheet 53 is the same as that contained in the 1 st resin 12. The 1 st fluorescent sheet 53 is arranged such that the side surface is parallel to the side surface of the light emitting element 51A, and the side surface is inclined by 45 ° with respect to the row direction and the column direction in which the light emitting element 51A is arranged in a plan view.
The 2 nd phosphor sheet 54 is a sheet having a rectangular planar shape and containing a phosphor. The 2 nd fluorescent sheet 54 is arranged to cover the upper surface of the light emitting element 11B. The 2 nd phosphor sheet 54 contains the 2 nd phosphor as in the 2 nd resin 13. The 2 nd phosphor plate 54 is disposed so that the side surface is parallel to the side surface of the light emitting element 51B and is inclined by 45 ° with respect to the row direction and the column direction in which the light emitting element 51B is arranged in a plan view.
Fig. 15 is a flowchart showing a method of manufacturing the light-emitting device 6.
First, in the substrate preparation step, the substrate 50 on which the 1 st electrode pair 56A and 56B and the 2 nd electrode pair 57A and 57B are arranged is prepared (S11). Next, in the light emitting element mounting step, the plurality of light emitting elements 51A and 51B are mounted on the upper surface of the substrate 50 of the substrate 10 by flip-chip bonding (S12).
Next, in the 1 st fluorescent sheet disposing step, the 1 st fluorescent sheet 53 is adhesively disposed on the upper surface of the light emitting element 51A via a transparent adhesive (S13). The adhesive material that adheres the 1 st fluorescent sheet 53 to the upper surface of the light emitting element 51A is cured to form a transparent resin that covers the side surface of the light emitting element 51A. Next, in the 2 nd fluorescent sheet disposing step, the 2 nd fluorescent sheet 54 is adhesively disposed on the upper surface of the light emitting element 51B via a transparent adhesive (S14). The adhesive material that adheres the 2 nd fluorescent sheet 54 to the upper surface of the light emitting element 51B is cured to form a transparent resin that covers the side surface of the light emitting element 51B.
Finally, in the 1 st resin placement step, the 1 st resin 52 before the solidification is dropped from a nozzle of a dropping device (not shown) to a proper extent so as to cover the plurality of light emitting elements 11A and 11B, and then cured, thereby forming the light emitting device 5 (S15). The 1 st resin 52 has a silicone resin, a reflective material, and a thickener. The 1 st resin 52 before curing has the same viscosity coefficient as the 1 st resin 12 before curing, and is cured by a predetermined heat treatment.
(Light-emitting device according to modification 1 of embodiment 6)
Fig. 16 (a) is a plan view of a light emitting device 6a according to modification 1 of embodiment 6, fig. 16 (B) is a sectional view of the light emitting device shown in fig. 16 (a) taken along line A-A ', and fig. 16 (c) is a sectional view of the light emitting device shown in fig. 16 (a) taken along line B-B'. The same components as those of the light emitting device 6 are denoted by the same reference numerals in the light emitting device 6a, and description thereof is omitted.
In the light-emitting device 6a, the number of light-emitting elements 51A and 51B arranged and the arrangement shape of the light-emitting elements 51A and 51B are different from those of the light-emitting device 6. In the light-emitting device 6a, the total number of the light-emitting elements 51A and 51B mounted on the substrate 50 is 24, which is 1.5 times the total number of the light-emitting elements 51A and 51B mounted on the substrate 50 in the light-emitting device 6.
The light emitting elements 51A and 51B are mounted such that 4 light emitting elements 51A are arranged in the 1 st column 71, the 3 rd column 73, and the 5 th column 75, and 4 light emitting elements 51B are arranged in the 2 nd row 72, the 4 th column 74, and the 6 th row 76. The light emitting elements 51A and 51B are each arranged such that the side surfaces thereof are inclined by 45 ° with respect to the row direction and the column direction in which the light emitting elements 51A and 51B are arranged in a plan view.
The 4 light emitting elements 51A arranged in the 1 st, 3 rd, and 5 th columns 71, 73, and 75 are connected in series between the 1 st electrode pair 56A and 56B, and the 4 light emitting elements 51B arranged in the 2 nd, 4 th, and 6 th columns 72, 74, and 76 are connected in series between the 2 nd electrode pair 57A and 57B.
Row 1 of light-emitting elements 51A is arranged outside of row 1 of light-emitting elements 51B 82. Row 1 of light emitting elements 51B is arranged between row 1 of light emitting elements 51A 81 and row 2 of light emitting elements 51A 83. Row 2 83 of light emitting element 51A is arranged between row 1 82 of light emitting element 51B and row 2 84 of light emitting element 51B. Row 2 84 of light-emitting elements 51B is arranged between row 2 83 of light-emitting elements 51A and row 3 85 of light-emitting elements 51A. Row 3 of light-emitting elements 51A is arranged between row 2 of light-emitting elements 51B 84 and row 3 of light-emitting elements 51B 86. Row 3 86 of light-emitting element 51B is arranged between row 3 85 of light-emitting element 51A and row 4 87 of light-emitting element 51A. Row 4 87 of light-emitting elements 51A is arranged between row 3 86 of light-emitting elements 51B and row 4 88 of light-emitting elements 51B. Row 4 88 of light-emitting elements 51B is arranged outside of row 4 87 of light-emitting elements 51A.
By shifting the arrangement of the light emitting elements 51A in the row direction from the arrangement of the light emitting elements 51B in the row direction, the light emitting device 6a can attach the light emitting elements 51A and 51B at a higher density than the light emitting device 6.
It should be understood that various changes, substitutions and alterations can be made herein by those skilled in the art without departing from the scope of the invention. For example, the above-described embodiments and modifications may be combined as appropriate within the scope of the present invention.
Claims (13)
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| Application Number | Priority Date | Filing Date | Title |
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| JP2023-047180 | 2023-03-23 | ||
| JP2023047180 | 2023-03-23 | ||
| PCT/JP2024/005974 WO2024195399A1 (en) | 2023-03-23 | 2024-02-20 | Light-emitting device |
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| CN120858665A true CN120858665A (en) | 2025-10-28 |
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| JP (1) | JP7562052B1 (en) |
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| US6666567B1 (en) * | 1999-12-28 | 2003-12-23 | Honeywell International Inc. | Methods and apparatus for a light source with a raised LED structure |
| JP2012054383A (en) * | 2010-09-01 | 2012-03-15 | Citizen Holdings Co Ltd | Semiconductor light-emitting device and manufacturing method of the same |
| JP6095479B2 (en) * | 2013-05-17 | 2017-03-15 | シチズン時計株式会社 | LED module |
| US9461024B2 (en) * | 2013-08-01 | 2016-10-04 | Cree, Inc. | Light emitter devices and methods for light emitting diode (LED) chips |
| JP2017050445A (en) * | 2015-09-03 | 2017-03-09 | パナソニックＩｐマネジメント株式会社 | Light-emitting device and luminaire |
| JP6869000B2 (en) * | 2015-10-23 | 2021-05-12 | シチズン電子株式会社 | Luminous module |
| JP2018022884A (en) * | 2016-07-21 | 2018-02-08 | シチズン電子株式会社 | Light-emitting device |
| JP2019016780A (en) * | 2017-07-04 | 2019-01-31 | 日亜化学工業株式会社 | Light-emitting device |
| JP6705476B2 (en) * | 2017-09-29 | 2020-06-03 | 日亜化学工業株式会社 | Light emitting device |
| JP7063583B2 (en) * | 2017-11-22 | 2022-05-09 | シチズン電子株式会社 | Light emitting device |
| JP7157331B2 (en) * | 2017-12-27 | 2022-10-20 | 日亜化学工業株式会社 | light emitting device |
| JP2020030905A (en) * | 2018-08-21 | 2020-02-27 | シチズン時計株式会社 | Led light-emitting device |
| JP7332979B2 (en) * | 2019-01-23 | 2023-08-24 | 東芝ライテック株式会社 | Light-emitting module and lighting device |
| JP2020136619A (en) * | 2019-02-25 | 2020-08-31 | パナソニックＩｐマネジメント株式会社 | Light emitting device and lighting device |
| JP7291548B2 (en) * | 2019-06-17 | 2023-06-15 | シチズン電子株式会社 | light emitting device |
| JP7410734B2 (en) * | 2020-02-05 | 2024-01-10 | シチズン時計株式会社 | LED light emitting device |
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