[go: up one dir, main page]

CN1208204C - Hot-stripping film patternizing method - Google Patents

Hot-stripping film patternizing method Download PDF

Info

Publication number
CN1208204C
CN1208204C CN 03148599 CN03148599A CN1208204C CN 1208204 C CN1208204 C CN 1208204C CN 03148599 CN03148599 CN 03148599 CN 03148599 A CN03148599 A CN 03148599A CN 1208204 C CN1208204 C CN 1208204C
Authority
CN
China
Prior art keywords
epoxy resin
film
template
patterned
organic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 03148599
Other languages
Chinese (zh)
Other versions
CN1470395A (en
Inventor
韩艳春
王哲
邢汝博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changchun Institute of Applied Chemistry of CAS
Original Assignee
Changchun Institute of Applied Chemistry of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changchun Institute of Applied Chemistry of CAS filed Critical Changchun Institute of Applied Chemistry of CAS
Priority to CN 03148599 priority Critical patent/CN1208204C/en
Publication of CN1470395A publication Critical patent/CN1470395A/en
Application granted granted Critical
Publication of CN1208204C publication Critical patent/CN1208204C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本发明属于热剥离图案化加工方法。采用转移微模塑的方法预固化形成环氧树脂模板;将需要图案化的介质在平面基底上成膜;将预固化的环氧树脂模板由上向下压在需要图案化的薄膜表面,并保持0.1~0.5MPa的压力,然后在80~120℃条件下加深固化5~15分钟,最后,将环氧树脂模板剥离,与环氧树脂表面突起部分图形相同的薄膜随环氧树脂模板剥落,从而在薄膜上形成图形。本发明的方法具有加工设备及工艺简单、形成图案精度高、加工成本低、效率高等特点。The invention belongs to a thermal stripping patterning processing method. The method of transfer micro-molding is used to pre-cure to form an epoxy resin template; the medium to be patterned is formed into a film on a flat substrate; the pre-cured epoxy resin template is pressed from top to bottom on the surface of the film to be patterned, and Keep the pressure of 0.1-0.5MPa, then deepen the curing at 80-120°C for 5-15 minutes, finally, peel off the epoxy resin template, and the film with the same pattern as the protrusion on the surface of the epoxy resin peels off with the epoxy resin template. Thereby forming a pattern on the film. The method of the invention has the characteristics of simple processing equipment and process, high pattern forming precision, low processing cost, high efficiency and the like.

Description

热剥离薄膜图案化加工方法Patterning processing method of thermal peeling film

技术领域technical field

本发明属于热剥离薄膜图案化加工方法。The invention belongs to a heat-peeling film patterning processing method.

背景技术Background technique

随着微电子工业的发展,尤其是有机电子的发展,实际加工中迫切需要一种能够在不损伤有机材料的基础上对有机薄膜和覆盖在有机薄膜表面的金属薄膜进行高精度图案化的技术。传统的有机半导体图案化加工中普遍采用光刻的方法产生图案。美国专利6,528,816描述了采用光刻的方法图案化有机薄膜晶体管有机半导体层的方法,美国专利6,340,626、5,242,543分别描述了采用光刻工艺对金属薄膜进行图案化的加工方法。但是,光刻需要昂贵的设备,并且加工工艺复杂,同时由于工艺的原因会对有机薄膜性质造成损害,直接影响所加工器件的性能。也有采用金属掩模板作为漏板,在有机小分子或金属蒸镀成膜过程中直接形成图形的方法。美国专利6,384,529描述了采用金属掩模作为图案化手段对有机晶体管直接进行图案化的方法。但是,金属掩模工艺加工精度低,最高只能达到微米级。1999年DuffyD.C等在Advanced Material上发表了采用硅橡胶作为图案化介质进行干法剥离的方法,2002年Chou等在Applied Physics Letters上发表了采用纳米压印的方法对有机薄膜晶体管金属电极进行图案化的加工方法,2002年Kymissis I.等在Journal of Vacuum Science andTechnology B上发表了采用双层光刻工艺解决有机薄膜加工中光刻工艺可能对有机层产生的破坏。但是以上方法均存在着加工工艺复杂、图案化成本高的缺点。With the development of the microelectronics industry, especially the development of organic electronics, there is an urgent need for a technology that can perform high-precision patterning of organic thin films and metal thin films covering the surface of organic thin films without damaging organic materials. . Photolithography is commonly used to generate patterns in traditional patterning of organic semiconductors. US Patent 6,528,816 describes a method of patterning an organic semiconductor layer of an organic thin film transistor by photolithography, and US Patents 6,340,626 and 5,242,543 respectively describe a processing method of patterning a metal thin film by photolithography. However, photolithography requires expensive equipment, and the processing technology is complicated. At the same time, due to the process, the properties of the organic thin film will be damaged, which directly affects the performance of the processed device. There is also a method of using a metal mask as a drain plate to directly form a pattern in the process of organic small molecule or metal evaporation film formation. US Patent 6,384,529 describes a method for direct patterning of organic transistors using a metal mask as the patterning means. However, the processing precision of the metal mask process is low, and the highest can only reach the micron level. In 1999, Duffy D.C et al. published a method of dry stripping using silicone rubber as a patterned medium on Advanced Material. In 2002, Chou et al. published a method of nanoimprinting on metal electrodes of organic thin film transistors on Applied Physics Letters. Patterned processing method, in 2002, Kymissis I. et al. published in Journal of Vacuum Science and Technology B that a double-layer photolithography process was used to solve the possible damage to the organic layer caused by the photolithography process in the processing of organic thin films. However, the above methods all have the disadvantages of complicated processing technology and high patterning cost.

发明内容Contents of the invention

本发明的目的是提供一种热剥离薄膜图案化加工方法。The object of the present invention is to provide a method for patterning a thermal peeling film.

加工中采用具有黏性的环氧树脂作为图案化用模板。首先采用转移微模塑的图案化方法,使环氧树脂预固化形成图案化用环氧树脂硬模板。然后在加热条件下,将已经预固化成型的环氧树脂硬模板与需要图案化的薄膜表面吻合,利用环氧树脂模板后固化产生的与薄膜表面间的黏性,将与环氧树脂模板表面突起部分图形相同区域的薄膜与环氧树脂模板粘结,并随环氧树脂模板一同剥落,达到了对薄膜一次性图案化的目的。A viscous epoxy resin is used as a template for patterning during processing. First, the patterning method of transfer micro-molding is adopted to pre-cure the epoxy resin to form a hard epoxy resin template for patterning. Then, under heating conditions, the epoxy resin hard template that has been pre-cured is matched with the surface of the film that needs to be patterned. The film in the same area of the protruding part is bonded to the epoxy resin template and peeled off together with the epoxy resin template, thereby achieving the purpose of one-time patterning of the film.

发明制备过程如下:The invention preparation process is as follows:

1.将环氧树脂预聚体及其交联剂按照体积比为2∶1~3∶1的比例混合并搅拌均匀后,采用转移微模塑的方法将混合后的液体转移到平面基底上,在室温条件下固化6~12小时,而后将软印章从基底上剥离,得到环氧树脂模板。1. After mixing the epoxy resin prepolymer and its crosslinking agent according to the volume ratio of 2:1 to 3:1 and stirring evenly, transfer the mixed liquid to the flat substrate by transfer micromolding , curing at room temperature for 6-12 hours, and then peeling off the soft stamp from the substrate to obtain an epoxy resin template.

2.将需要图案化的介质在平面基底上成膜,图案化介质对于有机材料为酞菁铜、自由酞菁或8-羟基喹啉铝,金属材料为金、银或铝。2. The medium to be patterned is formed into a film on a flat substrate. The patterned medium is copper phthalocyanine, free phthalocyanine or aluminum 8-hydroxyquinoline for organic materials, and gold, silver or aluminum for metal materials.

3.将预固化的环氧树脂模板由上向下压在需要图案化的薄膜表面,并保持0.1~0.5MPa的压力,使环氧树脂模板和需要图案化的薄膜之间充分接触,然后在80~120℃条件下加深固化5~15分钟,使环氧树脂模板和需要图案化的薄膜之间产生充分的粘结;最后,将环氧树脂模板剥离,与环氧树脂表面突起部分图形相同的薄膜随环氧树脂模板剥落,从而在薄膜上形成图形。3. Press the pre-cured epoxy resin template on the surface of the film to be patterned from top to bottom, and maintain a pressure of 0.1 to 0.5 MPa to make full contact between the epoxy resin template and the film to be patterned, and then Deepen the curing at 80-120°C for 5-15 minutes to make sufficient bonding between the epoxy resin template and the film to be patterned; finally, the epoxy resin template is peeled off, and the pattern is the same as the protrusion on the surface of the epoxy resin The thin film is peeled off with the epoxy template to form a pattern on the film.

附图说明Description of drawings

附图1为热剥离图案化方法示意图。其中1为环氧树脂模板,2为需要图案化的薄膜。Accompanying drawing 1 is the schematic diagram of thermal stripping patterning method. Among them, 1 is the epoxy resin template, and 2 is the film that needs to be patterned.

附图2为热剥离图案化方法加工得到的酞菁铜有机薄膜图形的光学照片。Accompanying drawing 2 is the optical photograph of the copper phthalocyanine organic thin film pattern that heat stripping patterning method processes.

附图3为热剥离图案化方法加工得到的酞菁铜有机薄膜图形的光学照片。Accompanying drawing 3 is the optical photograph of the copper phthalocyanine organic thin film pattern that heat stripping patterning method processes.

附图4为热剥离图案化方法加工得到的自由酞菁有机薄膜图形的光学照片。Accompanying drawing 4 is the optical photo of the free phthalocyanine organic thin film figure that the thermal stripping patterning method processes and obtains.

附图5为热剥离图案化方法加工得到的8-羟基喹啉铝有机薄膜图形的光学照片。Accompanying drawing 5 is the optical photo of the 8-hydroxyquinoline aluminum organic thin film pattern that the thermal stripping patterning method processes and obtains.

附图6为热剥离图案化方法加工得到的金薄膜图形的光学照片。Accompanying drawing 6 is the optical photo of the gold thin film figure processed by thermal stripping patterning method.

附图7为热剥离图案化方法加工得到的银薄膜图形的光学照片。Accompanying drawing 7 is the optical photograph of the silver thin film figure that heat stripping patterning process obtains.

附图8为热剥离图案化方法加工得到的铝薄膜图形的光学照片。Accompanying drawing 8 is the optical photo of the pattern of aluminum thin film processed by thermal peeling patterning method.

热剥离图案化方法在对薄膜的加工中不需要使用溶剂,因此避免了光刻工艺图案化过程中溶剂作用导致的对有机半导体薄膜的致命损伤。同时本发明的方法具有很高的精度,可以达到亚微米级,较采用漏板进行加工的方法在精度上有一个数量级以上的提高。本发明的方法适用于能够和环氧树脂模板粘结的任何表面,因此加工对象范围宽。本发明的方法与以往的图案化方法相比较,具有加工设备及工艺简单、形成图案精度高、加工成本低、效率高等特点。The thermal lift-off patterning method does not need to use a solvent in the processing of the film, thus avoiding the fatal damage to the organic semiconductor film caused by the action of the solvent in the patterning process of the photolithography process. At the same time, the method of the present invention has very high precision, which can reach the submicron level, and the precision is improved by more than an order of magnitude compared with the method of using bushing plate for processing. The method of the invention is applicable to any surface that can be bonded with the epoxy resin template, so the range of processing objects is wide. Compared with the previous patterning method, the method of the present invention has the characteristics of simple processing equipment and process, high pattern forming precision, low processing cost, high efficiency and the like.

具体实施方式Detailed ways

实施例1:将环氧树脂预聚体及其交联剂按照体积比为2∶1的比例混合并搅拌均匀后,采用转移微模塑的方法将环氧树脂图案化,在室温下固化6小时,将软印章从基底上剥离,得到环氧树脂模板。将环氧树脂模板由上向下压在需要图案化的酞菁铜有机薄膜表面,并保持0.5MPa的压力,在80℃条件下加深固化15分钟。将环氧树脂模板剥离,与环氧树脂表面突起部分图形相同的酞菁铜有机薄膜随环氧树脂模板剥落,从而在酞菁铜有机薄膜上形成图形,如附图2所示。Example 1: After mixing the epoxy resin prepolymer and its crosslinking agent according to the volume ratio of 2:1 and stirring evenly, the epoxy resin was patterned by transfer micro-molding, and cured at room temperature for 6 Hours, the soft stamp was peeled from the substrate to obtain an epoxy template. Press the epoxy resin template from top to bottom on the surface of the copper phthalocyanine organic film to be patterned, and maintain a pressure of 0.5 MPa, and deepen the curing at 80°C for 15 minutes. The epoxy resin template is peeled off, and the copper phthalocyanine organic film with the same pattern as the protrusion on the surface of the epoxy resin is peeled off with the epoxy resin template, thereby forming a pattern on the copper phthalocyanine organic film, as shown in Figure 2.

实施例2:将环氧树脂预聚体及其交联剂按照体积比为2∶1的比例混合并搅拌均匀后,采用转移微模塑的方法将环氧树脂图案化,在室温下固化8小时,将软印章从基底上剥离,得到环氧树脂模板。将环氧树脂模板由上向下压在需要图案化的酞菁铜有机薄膜表面,并保持0.3MPa的压力,在100℃条件下加深固化10分钟。将环氧树脂模板剥离,与环氧树脂表面突起部分图形相同的酞菁铜有机薄膜随环氧树脂模板剥落,从而在酞菁铜有机薄膜上形成图形,如附图3所示。Example 2: After mixing the epoxy resin prepolymer and its crosslinking agent according to the volume ratio of 2:1 and stirring evenly, the epoxy resin was patterned by transfer micro-molding and cured at room temperature for 8 Hours, the soft stamp was peeled from the substrate to obtain an epoxy template. Press the epoxy resin template from top to bottom on the surface of the copper phthalocyanine organic film to be patterned, and maintain a pressure of 0.3 MPa, and deepen the curing at 100 ° C for 10 minutes. The epoxy resin template is peeled off, and the copper phthalocyanine organic film with the same pattern as the protrusion on the surface of the epoxy resin is peeled off with the epoxy resin template, thereby forming a pattern on the copper phthalocyanine organic film, as shown in Figure 3.

实施例3:将环氧树脂预聚体及其交联剂按照体积比为3∶1的比例混合并搅拌均匀后,采用转移微模塑的方法将环氧树脂图案化,在室温下固化12小时,将软印章从基底上剥离,得到环氧树脂模板。将环氧树脂模板由上向下压在需要图案化的自由酞菁有机薄膜表面,并保持0.1MPa的压力,在120℃条件下加深固化5分钟。将环氧树脂模板剥离,与环氧树脂表面突起部分图形相同的自由酞菁有机薄膜随环氧树脂模板剥落,从而在自由酞菁有机薄膜上形成图形,如附图4所示。Example 3: After mixing the epoxy resin prepolymer and its crosslinking agent according to the volume ratio of 3:1 and stirring evenly, the epoxy resin was patterned by transfer micro-molding, and cured at room temperature for 12 Hours, the soft stamp was peeled from the substrate to obtain an epoxy template. Press the epoxy resin template from top to bottom on the surface of the free phthalocyanine organic film that needs to be patterned, and maintain a pressure of 0.1 MPa, and deepen the curing at 120 ° C for 5 minutes. The epoxy resin template is peeled off, and the free phthalocyanine organic film with the same pattern as the protrusion on the surface of the epoxy resin is peeled off with the epoxy resin template, thereby forming a pattern on the free phthalocyanine organic film, as shown in Figure 4.

实施例4:将环氧树脂预聚体及其交联剂按照体积比为12∶5的比例混合并搅拌均匀后,采用转移微模塑的方法将环氧树脂图案化,在室温下固化10小时,将软印章从基底上剥离,得到环氧树脂模板。将环氧树脂模板由上向下压在需要图案化的8-羟基喹啉铝有机薄膜表面,并保持0.5MPa的压力,在80℃条件下加深固化15分钟。将环氧树脂模板剥离,与环氧树脂表面突起部分图形相同的8-羟基喹啉铝有机薄膜随环氧树脂模板剥落,从而在8-羟基喹啉铝有机薄膜上形成图形,如附图5所示。Example 4: After mixing the epoxy resin prepolymer and its crosslinking agent according to the volume ratio of 12:5 and stirring evenly, the epoxy resin was patterned by transfer micro-molding, and cured at room temperature for 10 Hours, the soft stamp was peeled from the substrate to obtain an epoxy template. Press the epoxy resin template from top to bottom on the surface of the 8-hydroxyquinoline aluminum organic film that needs to be patterned, and maintain a pressure of 0.5 MPa, and deepen the curing at 80 ° C for 15 minutes. The epoxy resin template is peeled off, and the 8-hydroxyquinoline aluminum organic film with the same pattern as the surface protrusion of the epoxy resin is peeled off with the epoxy resin template, thereby forming a pattern on the 8-hydroxyquinoline aluminum organic film, as shown in Figure 5 shown.

实施例5:将环氧树脂预聚体及其交联剂按照体积比为3∶1的比例混合并搅拌均匀后,采用转移微模塑的方法将环氧树脂图案化,在室温下固化12小时,将软印章从基底上剥离,得到环氧树脂模板。将环氧树脂模板由上向下压在需要图案化的金薄膜表面,并保持0.3MPa的压力,在100℃条件下加深固化10分钟。将环氧树脂模板剥离,与环氧树脂表面突起部分图形相同的金薄膜随环氧树脂模板剥落,从而在金薄膜上形成图形,如附图6所示。Example 5: After mixing the epoxy resin prepolymer and its crosslinking agent according to the volume ratio of 3:1 and stirring evenly, the epoxy resin was patterned by transfer micro-molding, and cured at room temperature for 12 Hours, the soft stamp was peeled from the substrate to obtain an epoxy template. Press the epoxy resin template from top to bottom on the surface of the gold film to be patterned, and maintain a pressure of 0.3MPa, and deepen the curing at 100°C for 10 minutes. The epoxy resin template is peeled off, and the gold film with the same pattern as the protrusion on the surface of the epoxy resin is peeled off with the epoxy resin template, thereby forming a pattern on the gold film, as shown in Figure 6.

实施例6:将环氧树脂预聚体及其交联剂按照体积比为3∶1的比例混合并搅拌均匀后,采用转移微模塑的方法将环氧树脂图案化,在室温下固化12小时,将软印章从基底上剥离,得到环氧树脂模板。将环氧树脂模板由上向下压在需要图案化的银薄膜表面,并保持0.3MPa的压力,在100℃条件下加深固化10分钟。将环氧树脂模板剥离,与环氧树脂表面突起部分图形相同的银薄膜随环氧树脂模板剥落,从而在银薄膜上形成图形,如附图7所示。Example 6: After mixing the epoxy resin prepolymer and its crosslinking agent according to the volume ratio of 3:1 and stirring evenly, the epoxy resin was patterned by transfer micro-molding, and cured at room temperature for 12 Hours, the soft stamp was peeled from the substrate to obtain an epoxy template. Press the epoxy resin template from top to bottom on the surface of the silver film to be patterned, and maintain a pressure of 0.3MPa, and deepen the curing at 100°C for 10 minutes. The epoxy resin template is peeled off, and the silver film with the same pattern as the protrusion on the surface of the epoxy resin is peeled off with the epoxy resin template, thereby forming a pattern on the silver film, as shown in Figure 7.

实施例7:将环氧树脂预聚体及其交联剂按照体积比为3∶1的比例混合并搅拌均匀后,采用转移微模塑的方法将环氧树脂图案化,在室温下固化12小时,将软印章从基底上剥离,得到环氧树脂模板。将环氧树脂模板由上向下压在需要图案化的铝薄膜表面,并保持0.3MPa的压力,在100℃条件下加深固化10分钟。将环氧树脂模板剥离,与环氧树脂表面突起部分图形相同的铝薄膜随环氧树脂模板剥落,从而在铝薄膜上形成图形,如附图8所示。Example 7: After mixing the epoxy resin prepolymer and its crosslinking agent according to the volume ratio of 3:1 and stirring evenly, the epoxy resin was patterned by transfer micro-molding and cured at room temperature for 12 Hours, the soft stamp was peeled from the substrate to obtain an epoxy template. Press the epoxy resin template from top to bottom on the surface of the aluminum film to be patterned, and maintain a pressure of 0.3 MPa, and deepen the curing at 100°C for 10 minutes. The epoxy resin template is peeled off, and the aluminum film with the same pattern as the protrusion on the surface of the epoxy resin is peeled off with the epoxy resin template, thereby forming a pattern on the aluminum film, as shown in Figure 8.

Claims (3)

1.一种热剥离薄膜图案化加工方法,采用转移微模塑的方法预固化形成环氧树脂模板,其特征在于,在平面基底上加工一层需要图案化的有机薄膜或金属薄膜,将表面具有图形的环氧树脂模板压在需要图案化的薄膜表面,加上0.1~0.5MPa的压力,并在80~120℃温度条件下保持5~15分钟,然后将环氧树脂模板剥离,得到图案化的有机薄膜或金属薄膜。1. A heat-peelable film patterned processing method, adopting the method pre-curing of transfer micro-molding to form an epoxy resin template, it is characterized in that, on the flat substrate, process one layer of organic film or metal film that needs to be patterned, and the surface Press the epoxy resin template with graphics on the surface of the film to be patterned, apply a pressure of 0.1-0.5MPa, and keep it at a temperature of 80-120°C for 5-15 minutes, then peel off the epoxy resin template to obtain the pattern Thin organic or metal films. 2.如权利要求1所述的热剥离图案化加工方法,其特征在于所述的有机薄膜为酞菁铜、自由酞菁或8-羟基喹啉铝。2. The thermal peeling patterning processing method according to claim 1, characterized in that said organic thin film is copper phthalocyanine, free phthalocyanine or 8-hydroxyquinoline aluminum. 3.如权利要求1所述的热剥离图案化加工方法,其特征在于所述的金属薄膜为金、银或铝。3. The thermal peeling patterning processing method according to claim 1, characterized in that said metal thin film is gold, silver or aluminum.
CN 03148599 2003-07-07 2003-07-07 Hot-stripping film patternizing method Expired - Fee Related CN1208204C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 03148599 CN1208204C (en) 2003-07-07 2003-07-07 Hot-stripping film patternizing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 03148599 CN1208204C (en) 2003-07-07 2003-07-07 Hot-stripping film patternizing method

Publications (2)

Publication Number Publication Date
CN1470395A CN1470395A (en) 2004-01-28
CN1208204C true CN1208204C (en) 2005-06-29

Family

ID=34156277

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 03148599 Expired - Fee Related CN1208204C (en) 2003-07-07 2003-07-07 Hot-stripping film patternizing method

Country Status (1)

Country Link
CN (1) CN1208204C (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101226327B (en) * 2008-01-23 2010-12-29 中国科学院长春应用化学研究所 Method for manufacturing polyalcohol material pattern structure capable of transfer print
CN107031223B (en) * 2017-05-05 2024-03-19 苏州苏大维格科技集团股份有限公司 Deep-grain pattern transfer film and manufacturing method thereof
CN109270696B (en) * 2018-11-08 2021-02-09 宁波维真显示科技股份有限公司 Preparation method of 3D film

Also Published As

Publication number Publication date
CN1470395A (en) 2004-01-28

Similar Documents

Publication Publication Date Title
US6946332B2 (en) Forming nanoscale patterned thin film metal layers
CN1196602C (en) Thermal transfer element for forming multi-layer devices
US9893286B2 (en) Organic single crystal field effect circuit and preparing method thereof
RU2006117778A (en) METHOD FOR PRODUCING FILM
TW201244927A (en) Graphene film transfer method, and method for manufacturing transparent conductive film
US20190011831A1 (en) Method for Manufacturing Display Substrate
CN104134749B (en) Layer flexible plane embeds laminate patch electrode and preparation method thereof and the application in organic field single-crystal field effect transistor
CN1208204C (en) Hot-stripping film patternizing method
CN111170270A (en) A method for preparing surface microstructures based on electric field control of morphology
US8048725B2 (en) Method of forming pattern and method of producing electronic element
CN1879235A (en) Method for orientation treatment of electronic functional material and thin film transistor
CN101055830A (en) Making method of self-limited boundary film graphics
CN110767806B (en) A kind of organic thin film transistor and its preparation method and display device
CN1493464A (en) Micro transfer patterning processing method
JP2007201056A (en) Thin film transistor and manufacturing method thereof
JP2010205848A (en) Method for manufacturing flat conductive film, method for manufacturing semiconductor device, and semiconductor device
CN101154715B (en) Manufacturing method of organic semiconductor device
US7060633B2 (en) Planarization for integrated circuits
CN1397432A (en) Thermal moulding method for making pattern on high-molecular film
TWI606522B (en) Epitaxial lift-off method with supercritical fluids, epitaxial lift-off film transfer method and structure thereof
CN109188864B (en) Photoresist composition and stripping method thereof
JP2006186293A (en) Thin film transistor manufacturing method
US10347838B2 (en) Manufacturing method for thin film transistors and display panel
KR101649557B1 (en) Fabrication method for conductive pattern and the conductive pattern thereby
CN104341605B (en) A kind of anisotropy organic film and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20050629