CN1275772C - fluid ejection device - Google Patents
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- CN1275772C CN1275772C CN 200410031857 CN200410031857A CN1275772C CN 1275772 C CN1275772 C CN 1275772C CN 200410031857 CN200410031857 CN 200410031857 CN 200410031857 A CN200410031857 A CN 200410031857A CN 1275772 C CN1275772 C CN 1275772C
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- 239000012530 fluid Substances 0.000 title claims abstract description 83
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 229920005591 polysilicon Polymers 0.000 claims description 14
- 239000007921 spray Substances 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 3
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 30
- 239000000758 substrate Substances 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 229910018594 Si-Cu Inorganic materials 0.000 description 3
- 229910008465 Si—Cu Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000000446 fuel Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- 229910001362 Ta alloys Inorganic materials 0.000 description 2
- WIGAYVXYNSVZAV-UHFFFAOYSA-N ac1lavbc Chemical compound [W].[W] WIGAYVXYNSVZAV-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- LRTTZMZPZHBOPO-UHFFFAOYSA-N [B].[B].[Hf] Chemical compound [B].[B].[Hf] LRTTZMZPZHBOPO-UHFFFAOYSA-N 0.000 description 1
- LNGCCWNRTBPYAG-UHFFFAOYSA-N aluminum tantalum Chemical compound [Al].[Ta] LNGCCWNRTBPYAG-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 238000012377 drug delivery Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- QUCZBHXJAUTYHE-UHFFFAOYSA-N gold Chemical compound [Au].[Au] QUCZBHXJAUTYHE-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
Description
本发明是原发明专利申请(申请号:01143335.3,申请日:2001年12月20日,发明名称:流体喷射头结构及其制造方法)的分案申请。The present invention is a divisional application of the original invention patent application (application number: 01143335.3, application date: December 20, 2001, invention name: fluid ejection head structure and manufacturing method thereof).
技术领域technical field
本发明涉及一种流体喷射头结构及其制造方法,特别是涉及一种利用两排气泡产生器之间进行电力线布局的流体喷射头结构及其制造方法。The invention relates to a structure of a fluid ejection head and a manufacturing method thereof, in particular to a structure of a fluid ejection head utilizing electric force line layout between two rows of bubble generators and a manufacturing method thereof.
背景技术Background technique
目前,流体喷射装置已被广泛地运用于喷墨打印机的喷墨头等的设备中,而且随着流体喷射装置的可靠度(reliability)不断提高、成本的大幅度降低,以及可提供高频率(frequency)与高空间分辨率(spatial resolution)的高质量液滴喷射的研发,流体喷射装置也逐渐有其它众多可能的应用,例如:燃料喷射系统(fuel injection system)、细胞分类(cell sorting)、药物释放系统(drugdelivery system)、喷印光刻技术(print lithography)及微喷射推进系统(micro jetpropulsion system)等等。At present, fluid ejection devices have been widely used in equipment such as inkjet heads of inkjet printers, and with the continuous improvement of reliability (reliability) of fluid ejection devices, the significant reduction in cost, and the ability to provide high frequency ) and the development of high-quality droplet ejection with high spatial resolution, fluid ejection devices are gradually having many other possible applications, such as: fuel injection system (fuel injection system), cell sorting (cell sorting), medicine Release system (drugdelivery system), jet printing lithography (print lithography) and micro jet propulsion system (micro jet propulsion system), etc.
在现今的产品中,能够个别地喷射出形状一致的液滴的流体喷射装置种类并不多,其中最为成功的一种设计为使用热驱动气泡(thermal driven bubble)以射出液滴的方法。由于其设计简单,且成本低廉,因此在使用上也最为普遍。In today's products, there are not many types of fluid ejection devices capable of individually ejecting liquid droplets of uniform shape, and one of the most successful designs is the method of ejecting liquid droplets using thermally driven bubbles. Because of its simple design and low cost, it is also the most common in use.
例如,在现有的喷墨头结构中,美国专利号码5,774,148中,便曾提到一种使用从中间歧管供应墨水的方式(center feed)。此种喷墨头结构通常是采用喷砂、激光切割或化学蚀刻的方式,将芯片(chip)穿透,再由中间歧管进行供墨。For example, in the existing inkjet head structure, in US Pat. No. 5,774,148, a method (center feed) of supplying ink from an intermediate manifold has been mentioned. The structure of the inkjet head is usually sand blasted, laser cut or chemically etched to penetrate the chip, and then the ink is supplied by the middle manifold.
然而利用此方法不但需要比较大的芯片尺寸,而且芯片中挖掉的部分也无法做任何利用,非常不符合经济效益。However, using this method not only requires a relatively large chip size, but also the excavated part of the chip cannot be used in any way, which is very uneconomical.
发明内容Contents of the invention
本发明的目的在于提供一种流体喷射头结构及其制造方法,通过提高线路布局的积集度,以缩小所需的芯片尺寸,并提高经济效益。The purpose of the present invention is to provide a fluid ejection head structure and its manufacturing method, which can reduce the required chip size and improve economic benefits by increasing the integration of circuit layout.
本发明的目的是这样实现的,即提供一种流体喷射装置打印头,包括:The purpose of the present invention is achieved in that a fluid ejection device print head is provided, comprising:
多个喷孔(orifices),形成在所述流体喷射装置打印头上,用于从所述打印头喷出墨水流体;a plurality of orifices formed on said fluid ejection device printhead for ejecting ink fluid from said printhead;
多个气泡产生器,与所述喷孔相对应,用于在墨水流体中产生气泡,并通过相应的喷孔喷出墨水流体;A plurality of bubble generators, corresponding to the nozzle holes, are used to generate bubbles in the ink fluid and eject the ink fluid through the corresponding nozzle holes;
多个晶体管,其中所述晶体管电连接到相应的气泡产生器上,用来开启和关闭气泡产生器;a plurality of transistors, wherein the transistors are electrically connected to corresponding bubble generators for turning on and off the bubble generators;
多个电力衬垫(power pads),用于将电力提供到一组气泡产生器的一端上;a plurality of power pads for providing power to one end of a set of bubble generators;
多个地址衬垫(address pads),所述地址衬垫与所述气泡产生器中的每一个相对应,用来在该组气泡产生器中选择一个气泡产生器;以及a plurality of address pads corresponding to each of the bubble generators for selecting a bubble generator in the set of bubble generators; and
多个接地衬垫(ground pads),用于为该组气泡产生器的另一端提供接地连接,a plurality of ground pads to provide a ground connection for the other end of the set of bubble generators,
其中,由所述电力衬垫、电连接到所述电力衬垫上的金属线、所述气泡产生器、相应的晶体管、电连接到所述接地衬垫上的金属线、以及所述接地衬垫所形成的路径为一条U形的路径。Wherein, the power pad, the metal wire electrically connected to the power pad, the bubble generator, the corresponding transistor, the metal wire electrically connected to the ground pad, and the ground pad The path formed by the pads is a U-shaped path.
另外,本发明还提供一种流体喷射头结构,该流体喷射头结构包括有:一基材;一歧管,形成于该基材内;至少两排流体腔,各该流体腔相连通于该歧管且位于该歧管的两侧,用来使一流体由该歧管流至该流体腔;至少一气泡产生器,形成于该基材上,且位于相对应的该流体腔内;以及一导电线路,位于该歧管上方的该基材表面,且部分的该导电线路位于该至少二排流体腔之间,用以驱动该气泡产生器。In addition, the present invention also provides a fluid ejection head structure, the fluid ejection head structure includes: a substrate; a manifold formed in the substrate; at least two rows of fluid chambers, each of which is connected to the fluid chamber a manifold located on both sides of the manifold, used to allow a fluid to flow from the manifold to the fluid chamber; at least one bubble generator formed on the substrate and located in the corresponding fluid chamber; and A conductive circuit is located on the surface of the substrate above the manifold, and part of the conductive circuit is located between the at least two rows of fluid chambers for driving the bubble generator.
本发明还提供一种流体喷射头的制造方法,该制造方法包括有下列步骤:提供一基材;在该基材上形成至少一气泡产生器;形成一位于该基材内的歧管;形成至少二排流体腔,且各该流体腔相连通于该歧管且位于该歧管的两侧,用来使一流体由该歧管流至该流体腔内;以及在该歧管上方的该基材表面形成一导电线路,且部分的该导电线路位于该至少二排流体腔之间,用以驱动该气泡产生器。The present invention also provides a method for manufacturing a fluid ejection head, which includes the following steps: providing a substrate; forming at least one bubble generator on the substrate; forming a manifold located in the substrate; forming at least two rows of fluid chambers, and each of the fluid chambers is connected to the manifold and located on both sides of the manifold, for allowing a fluid to flow from the manifold into the fluid chamber; and the manifold above the manifold A conductive circuit is formed on the surface of the substrate, and part of the conductive circuit is located between the at least two rows of fluid chambers for driving the bubble generator.
由于本发明所提供的流体喷射头结构,不需将整个芯片蚀穿即可达到顺利供墨的效果,而且其更于利用歧管上方的空间来进行电路布局,所以本发明不但可以有效增强歧管上方结构层的强度,并能大幅度缩减芯片尺寸,扩增喷头数目,进而提高打印速度。Because the structure of the fluid ejection head provided by the present invention can achieve the effect of smooth ink supply without etching through the entire chip, and it is better at using the space above the manifold for circuit layout, so the present invention can not only effectively enhance the manifold The strength of the structural layer above the tube can greatly reduce the size of the chip, expand the number of nozzles, and increase the printing speed.
附图说明Description of drawings
图1为本发明喷墨头结构的结构剖视图;Fig. 1 is the structural sectional view of inkjet head structure of the present invention;
图2为本发明的实施例横切面示意图;Fig. 2 is a cross-sectional schematic diagram of an embodiment of the present invention;
图3为本发明流体喷射头的上视图;Figure 3 is a top view of the fluid ejection head of the present invention;
图4为本发明流体喷射头芯片的局部放大图;Fig. 4 is a partially enlarged view of the fluid ejection head chip of the present invention;
图5为本发明流体喷射头的矩阵式驱动电路示意图;Fig. 5 is a schematic diagram of a matrix drive circuit of the fluid ejection head of the present invention;
图6至图8为本发明流体喷射头的制作流程示意图。6 to 8 are schematic diagrams of the manufacturing process of the fluid ejection head of the present invention.
具体实施方式Detailed ways
请参见图1,图1为本发明的流体喷射头的结构剖视图。本发明的流体喷射头为一种具有虚拟气阀(virtual valve)的流体喷射装置。如图1所示,气泡产生器包括有两个气泡产生构件,分别为第一加热组件14a与第二加热组件14b,环绕在喷孔(nozzle)12四周,由两个加热组件14a、14b间的差异,例如电阻值的不同,可使得加热此二加热组件14a、14b时,会先后生成二气泡。首先在喷孔12处比靠近歧管(manifold)11的第一加热组件14a处先形成一第一气泡(未显示),此第一气泡会隔绝歧管11与喷孔12,而产生类似气阀的功能,以减小与相邻流体腔16产生互相干扰(cross talk)的效应,接着会于靠近第二加热组件14b处产生一第二气泡(未显示),由此第二气泡推挤流体腔16内的流体(未显示),使流体由喷孔12中喷出。最后,第二气泡会与第一气泡相结合,并由此二气泡的结合以达到减少卫星液滴(satellitedroplet)的产生。Please refer to FIG. 1 , which is a cross-sectional view of the structure of the fluid ejection head of the present invention. The fluid ejection head of the present invention is a fluid ejection device with a virtual valve. As shown in Figure 1, the bubble generator includes two bubble generating components, respectively a
由于本发明的流体喷射头的结构不用蚀穿整个芯片即可达到顺利喷出液体的需求,因此基于这种架构下,本发明便可在歧管11上方进行电力线(power lines)的布局,同时增强歧管11上方结构层的强度。此外,为了解说方便起见,以下本发明的流体喷射头便以喷墨头为实施例来加以说明。Because the structure of the fluid ejection head of the present invention does not need to etch through the entire chip, it can meet the requirement of ejecting liquid smoothly, so based on this structure, the present invention can carry out the layout of power lines (power lines) above the manifold 11, and at the same time Strengthen the strength of the structural layer above the manifold 11. In addition, for the convenience of explanation, the fluid ejection head of the present invention will be described below using an inkjet head as an embodiment.
请参见图2,图2为本发明整个芯片制作完成的剖视图,其中第一加热组件14a与第二加热组件14b上方沉积了一低温氧化层18以作为保护层,且在指定的地区开洞(via)以使金属层13经由此洞流入加热器14a、14b的上方表面,而达成金属传导层13与加热器14a、14b电连接的目的。Please refer to FIG. 2. FIG. 2 is a cross-sectional view of the entire chip of the present invention, wherein a low-
同样地,在MOSFET(金氧半导体场效应晶体管)组件15的漏极(drain)68与源极(source)66也通过金属层13电连接至加热器14a、14b与接地端(ground)20。所以当MOSFET组件15的栅极(gate)64被打开时,由金属层13所构成的衬垫(pad)会将外部所供给的电压信号送到此喷墨头内,此时,电流会由衬垫进入,先经由金属层13到第一加热器14a与第二加热器14b,再经由MOSFET组件15的漏极到源极,再流至接地端20而完成一次加热的动作。此时,由于流体腔16(即此喷墨头的喷墨腔)内的墨水被加热,因而产生两个气泡将墨滴经由喷孔12推挤出去。其中,可根据所需打印数据量的不同,而分别控制不同的喷孔12以喷出墨水液滴。此外,金属层13的材料选自铝(Aluminum)、金(Gold)、铜(Copper)、钨(Tungsten)及铝硅铜合金(Alloys of Al-Si-Cu)所构成族群中的任一者。Similarly, the
请参见图3及图4,图3为本发明的喷墨头的上视图。在此实施例中,将其分成16个P群(包含P1至P16),每个P群又包括有22个寻址(Address,A1至A22),可对照图5的矩阵式驱动电路图,一逻辑电路或微处理器32将会根据所需打印的数据,送出一选择信号至电力线驱动器(power driver)34以及地址线驱动器(address driver)35,来控制要开启哪个寻址(A1至A22)以及供电给哪个P群(P1至P16)。举例而言,若供电给P1,且开启A22,则此时P1群中A22的加热器14a、14b将会依照设定的时间完成加热以及喷墨的操作。Please refer to FIG. 3 and FIG. 4, FIG. 3 is a top view of the inkjet head of the present invention. In this embodiment, it is divided into 16 P groups (including P1 to P16), and each P group includes 22 addressing (Address, A1 to A22), which can be compared with the matrix driving circuit diagram in Figure 5, a The logic circuit or the microprocessor 32 will send a selection signal to the power line driver (power driver) 34 and the address line driver (address driver) 35 according to the data to be printed, to control which addressing (A1 to A22) will be opened And to which P group (P1 to P16) the power is supplied. For example, if power is supplied to P1 and A22 is turned on, the
图4为图3中B区域(虚线部分)的局部放大图。如图4所示,可以清楚地看到芯片的中间设置有两排喷孔12,若将整个芯片的喷孔12分成两半(以图3的A-A’分隔线作区分),即在芯片A-A’的右侧包括有八群喷孔(P1至P8),而左侧也包括有八群喷孔(P9至P16)。并利用歧管11的上方,两排喷孔12间的中央地区来进行电力线(power line)19的布局,在分隔线A-A’的右侧布局了8条金属线(metal lines,P1至P8),并连接到右边的输出入衬垫(I/Opads)。同样地,分隔线A-A’的左侧也布局了8条金属线(metal lines,P9至P16),并连接到左边的输出入衬垫(I/O pads,图中未示)。FIG. 4 is a partially enlarged view of area B (dotted line) in FIG. 3 . As shown in Figure 4, it can be clearly seen that two rows of
本发明的每组衬垫P至衬垫G采取U字型的驱动线路布局方法,例如衬垫P1到衬垫G1的驱动线路布局方法(如虚线部位所示),而且各电路连接间互不跨接,且仅使用一层金属层13即完成电力线19至加热器14a、14b,再连到MOSFET组件15,最后至接地端衬垫G的联机动作。另外,在MOSFET组件15的上下两边各布局11条横向金属线22,横向金属线22与衬垫A连接,并用以将地址线驱动器35入的数据传入各MOSFET组件15,以决定哪个喷孔12喷出墨水,并在MOSFET组件15的左右两边(即靠近芯片的两端)各布局了11条纵向多晶硅线(polysilicon lines)23,共22条多晶硅线23,并且在横向金属线22和纵向多晶硅线23要电连接的部分打上接触层(contact layer)24以完成电连接,而多晶硅线23的作用为连通芯片上下端的横向金属线22,例如,由衬垫A1输入信号,此时要打开P16的加热组件,则需经由纵向多晶硅线23传递至下方的横向金属线22,才能连接至P16的加热器,达成喷墨的功能,而其动作原理将于后面详述。Each group of pads P to pad G of the present invention adopts a U-shaped driving circuit layout method, such as the driving circuit layout method from pad P1 to pad G1 (as shown by the dotted line), and the circuit connections are different from each other. Crossover, and only one layer of
在此进一步详述本发明流体喷射头结构的制程方法如下。请参考图6至图8,图6至图8为本发明流体喷射头结构的制作流程示意图。首先,在一硅芯片基板60上以局部热氧化法(Local oxidation)形成一场氧化层(Fieldoxide)62。接着进行一硼离子布植(Blanket boron implant),以调整驱动电路的起始电压(Threshold voltage),再形成一多晶硅栅极(Polysilicon gate)64在场氧化层62中,其中,形成多晶硅栅极64的同时,也于芯片接近边缘的两侧,形成如前所述22条纵向多晶硅线23,以作为导线之用。之后,并再施以离子布植,以于栅极64两侧形成一源极(Source)66及一漏极(Drain)68,完成MOSFET组件15。随后沉积一低应力层(Low stress layer)72,如氮化硅(SiNx)材料,以做为流体腔16的上层,如图6所示。The fabrication method of the fluid ejection head structure of the present invention is further described in detail as follows. Please refer to FIG. 6 to FIG. 8 . FIG. 6 to FIG. 8 are schematic diagrams of the manufacturing process of the fluid ejection head structure of the present invention. First, a field oxide layer (Fieldoxide) 62 is formed on a
请参考图7,接下来,使用蚀刻液氢氧化钾(KOH)从基板60的背面蚀刻以形成歧管11,做为供给流体进入的主要流道,而后再将部分场氧化层62以蚀刻液氢氟酸(HF)移除,作为流体腔16。随后在精确地控制蚀刻时间下,进行另一次以蚀刻液氢氧化钾(KOH)的蚀刻,用以加大流体腔16的深度,如此流体腔16与歧管11便得以相连通且可填满流体。在进行此蚀刻步骤期间需特别留意,因为流体腔16的凸角(Convex corner)也会被蚀刻液攻击而会被蚀刻成圆弧的形状。Please refer to FIG. 7, next, use an etchant potassium hydroxide (KOH) to etch from the backside of the
然后再继续进行加热器的制作过程。其中,加热器包括有第一加热器14a及第二加热器14b,而加热器的制作过程为现有该项技术者所能轻易完成,故在此不多加赘述。此外,对第一加热器14a及第二加热器14b而言,较佳的材料为铝钽合金(Alloys of tantalum and aluminum),而其它材料如铂(Platinum)、硼化铪(HfB2)等也可达到相同作用。另外,为了保护第一加热器14a与第二加热器14b并隔离此一个以上的MOSFET组件15,故在整个基板60上,包括栅极64、源极66、漏极68及场氧化层62的范围会再沉积一低温氧化层74用以做为保护层。Then continue with the heater manufacturing process. Wherein, the heater includes a
接着,在第一加热器14a与第二加热器14b上形成一导电层(Conductivelayer)13,用来当作第一导电线路以导通第一加热器14a、第二加热器14b与驱动电路的功能组件。其中,驱动电路用以分别独立地传送一信号至个别的加热器(第一加热器14a与第二加热器14b),且用以驱动一对以上的加热器(第一加热器14a与第二加热器14b),如此即可利用数量较少的电路组件与连接线路,可相同达到控制电路的功效。在本发明的实施例中,导电层13的较佳材料为如铝硅铜合金(Alloys of Al-Si-Cu)、铝(Aluminum)、铜(Copper)、金(Gold)或钨(Tungsten)等金属材料。随后再沉积一低温氧化层76于导电层13之上以做为保护层。Next, a conductive layer (Conductivelayer) 13 is formed on the
最后,请参考图8,在第一加热器14a与第二加热器14b之间形成一喷孔12。至此,即可形成一体成型且具有驱动电路的流体喷射装置数组。由上述说明可知,本发明不仅可将驱动电路与加热器整合于同一基板上,而且不需另外贴上喷嘴平板即可完成整体微喷射头的结构。Finally, referring to FIG. 8 , an
接着详述其动作原理如下:请参图4与图5,当进行喷墨打印时,逻辑电路或微处理器32将会根据所需打印的数据,决定要由哪一个喷孔喷出墨水,接着会送出一选择信号至电力线驱动器(power driver)34以及地址线驱动器(address driver)35,以开启相对应的寻址(A1至A22)以及供电至相对应的P群(P1至P16),之后电流便会流经加热器14a、14b而加热流体以产生气泡,进行一喷墨动作。举例而言:若要让位于A1P1处的喷孔12a喷出液滴,则必须要经由输出入衬垫A1送进一个电压信号至MOSFET组件15的栅极64来将开关打开,接着再由输出入衬垫P1提供一电压信号,以产生电流,此时电流便会流经加热器14a、14b而加热墨水以产生气泡,再流经MOSFET组件15的漏极68到源极66,最后流至接地端20,至此,完成一个墨滴喷出的动作。Then describe its action principle in detail as follows: please refer to Fig. 4 and Fig. 5, when performing inkjet printing, the logic circuit or microprocessor 32 will decide which nozzle hole to eject ink according to the data to be printed, Then a selection signal will be sent to the power line driver (power driver) 34 and the address line driver (address driver) 35 to enable the corresponding addressing (A1 to A22) and power supply to the corresponding P group (P1 to P16), Afterwards, the current flows through the
上述的喷墨头结构虽仅以单色打印机的结构来作说明,但本发明的应用并不局限于单色喷墨打印机,在彩色或多色的喷墨头结构中也可适用本发明。此外,本发明的流体喷射装置也具有其它众多可能的应用,例如:燃料喷射系统、细胞分类、药物释放系统、喷印光刻技术、微喷射推进系统等,并不以喷墨打印为限。Although the structure of the above-mentioned inkjet head is only described with the structure of a monochrome printer, the application of the present invention is not limited to the monochrome inkjet printer, and the present invention is also applicable to the structure of a color or multicolor inkjet head. In addition, the fluid injection device of the present invention also has many other possible applications, such as: fuel injection system, cell classification, drug release system, jet printing lithography technology, micro-jet propulsion system, etc., not limited to inkjet printing.
因此,本发明所提供的流体喷射头结构以及其制造方法,在歧管上方两排气泡产生器之间的位置,进行整片芯片的导电层电路布局,其具有下列功效:Therefore, the structure of the fluid ejection head provided by the present invention and its manufacturing method perform the circuit layout of the conductive layer of the entire chip at the position between the two rows of bubble generators above the manifold, which has the following effects:
(1)由于供墨方式不是采用整个芯片打穿的方式,因此可于歧管上方进行电路布局,将节省整个芯片的尺寸而增加整片芯片(wafer)的芯片切割量;(1) Since the ink supply method does not use the method of punching through the entire chip, the circuit layout can be carried out above the manifold, which will save the size of the entire chip and increase the chip cutting amount of the entire wafer (wafer);
(2)在歧管上方的结构层上进行绕线布局可有效提高此一结构层的强度;以及(2) Winding layout on the structural layer above the manifold can effectively improve the strength of this structural layer; and
(3)通过此一提高线路布局积集度的方法,将可节省电路布局所占之面积,即在相同的芯片面积下,可以设置更多的喷孔,以提高打印速度。(3) The area occupied by the circuit layout can be saved through this method of improving the integration degree of the circuit layout, that is, under the same chip area, more nozzle holes can be set to increase the printing speed.
以上所述仅为本发明的较佳实施例,凡按本发明权利要求所作的均等变化与修饰,都应属本发明专利的涵盖范围。The above descriptions are only preferred embodiments of the present invention, and all equivalent changes and modifications made according to the claims of the present invention should fall within the scope of the patent of the present invention.
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