[go: up one dir, main page]

CN113854641A - Heating element based on monocrystalline silicon permeation structure, preparation method and electronic cigarette - Google Patents

Heating element based on monocrystalline silicon permeation structure, preparation method and electronic cigarette Download PDF

Info

Publication number
CN113854641A
CN113854641A CN202111300268.3A CN202111300268A CN113854641A CN 113854641 A CN113854641 A CN 113854641A CN 202111300268 A CN202111300268 A CN 202111300268A CN 113854641 A CN113854641 A CN 113854641A
Authority
CN
China
Prior art keywords
layer
heating element
heating
silicon
oil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202111300268.3A
Other languages
Chinese (zh)
Inventor
李博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongguan Keleipeng Atomization Technology Co ltd
Original Assignee
Shenzhen Cloupor Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Cloupor Technology Co Ltd filed Critical Shenzhen Cloupor Technology Co Ltd
Priority to CN202111300268.3A priority Critical patent/CN113854641A/en
Publication of CN113854641A publication Critical patent/CN113854641A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • AHUMAN NECESSITIES
    • A24TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
    • A24FSMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
    • A24F40/00Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
    • A24F40/40Constructional details, e.g. connection of cartridges and battery parts
    • A24F40/46Shape or structure of electric heating means
    • AHUMAN NECESSITIES
    • A24TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
    • A24FSMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
    • A24F40/00Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
    • A24F40/40Constructional details, e.g. connection of cartridges and battery parts

Landscapes

  • Resistance Heating (AREA)

Abstract

本发明涉及电子烟技术领域,具体涉及一种基于单晶硅渗透结构的发热元件,包括发热片本体,所述发热片本体上通过蚀刻或光刻形成有渗透区,所述发热片本体位于所述渗透区的下侧设有发热线路,所述单晶硅位于发热线路的一侧通过光刻成型有控制电路,所述控制电路与发热线路电性连接,所述渗透区开设有可用于液体和气体通过的渗透结构;本发明采用单晶硅光刻或蚀刻微孔形成的多孔硅发热片,在工作过程中,采用了单晶硅片加工成型的发热片本体,并在发热片本体上通过蚀刻或光刻等工艺形成多孔渗透结构,用于电子烟的烟油渗透。

Figure 202111300268

The present invention relates to the technical field of electronic cigarettes, in particular to a heating element based on a single crystal silicon permeation structure, comprising a heating element body, a penetration area is formed on the heating element body by etching or photolithography, and the heating element body is located at a The lower side of the penetration area is provided with a heating circuit, the single crystal silicon is located on one side of the heating circuit and a control circuit is formed by photolithography, the control circuit is electrically connected with the heating circuit, and the penetration area is provided with a circuit that can be used for liquid. In the present invention, the porous silicon heating element formed by single crystal silicon photolithography or etching micropores is used. Porous permeable structures are formed by processes such as etching or photolithography, which are used for e-liquid penetration of electronic cigarettes.

Figure 202111300268

Description

Heating element based on monocrystalline silicon permeation structure, preparation method and electronic cigarette
Technical Field
The invention relates to the technical field of electronic cigarettes, in particular to a heating element based on a monocrystalline silicon permeation structure, a preparation method of the heating element and an electronic cigarette.
Background
The electronic cigarette is mainly used for quitting and replacing cigarettes, can simulate the taste of the cigarettes, but can not release tar, nicotine and second-hand smoke harmful to human bodies when the electronic cigarette is smoked, and can improve the smoking quitting success rate of nicotine replacement therapy, so that the electronic cigarette is popular in the market and is valued by the nation soon. The electronic atomized cigarette has the principle that a smoke agent is heated and gasified on an electric heating element of an atomization system to form high-temperature steam and the high-temperature steam is sprayed out of an opening end, and the sprayed steam expands and condenses into smoke-shaped micro liquid drops in the atmosphere, so that smoke similar to the traditional cigarette is formed.
Traditional electron cigarette structure generally includes host computer and cigarette bullet, the host computer is used for power supply and control connection cigarette bullet, set up tobacco tar and atomization structure in the cigarette bullet, host computer control atomization structure realizes the atomizing of tobacco tar to the tobacco tar heating, need use the heating element to be used for heating the tobacco tar when the electron cigarette heats the atomizing to the tobacco tar, current atomization structure generally all is the ceramic atomization or the cotton core atomizing of adopting, ceramic atomization and cotton core atomizing life are short, the homogeneity of generating heat is poor, the influence is inhaled and is eaten the taste.
Disclosure of Invention
In order to solve the problems, the invention provides a porous silicon heating sheet formed by photoetching or etching micropores through monocrystalline silicon, wherein in the working process, a heating sheet body formed by processing a monocrystalline silicon wafer is adopted, a porous penetration structure is formed on the heating sheet body through the processes of etching or photoetching and the like, and the heating element based on the monocrystalline silicon penetration structure is used for tobacco tar penetration of an electronic cigarette, and a preparation method and the electronic cigarette.
The technical scheme adopted by the invention is as follows: the utility model provides a heating element based on monocrystalline silicon osmotic structure, includes the piece body that generates heat, it has the infiltration district to generate heat to be formed through etching or photoetching on the piece body, the piece body that generates heat is located the downside of infiltration district is equipped with the heating circuit, monocrystalline silicon is located one side of heating circuit and has control circuit through the photoetching shaping, control circuit and heating circuit electric connection, the infiltration district is seted up and is used for the osmotic structure that liquid and gas pass through.
The further improvement of the scheme is that one side of the heating sheet body, which deviates from the heating circuit and the control circuit, is provided with an oil transportation sheet, and the oil transportation sheet is attached to the heating sheet body.
The scheme is further improved in that the oil conveying sheet is made of monocrystalline silicon evenly distributed with porous silicon formed by oil conveying holes, an oil storage cavity is formed in a corresponding permeation region of the oil conveying sheet, oil storage cotton is arranged in the oil storage cavity and is high-temperature-resistant oil storage cotton, and the oil storage cotton comprises a porous cotton cloth layer, a filter layer, a nanofiber oil absorption layer and a nanofiber oil containing layer; the nanofiber oil-holding layer is arranged and combined in different orders, and the nanofiber oil-holding layer or the nanofiber oil-absorbing layer is attached to the heating sheet body; compact pores with the same size are uniformly distributed on the porous cotton cloth layer, the porous cotton cloth layer has certain contractibility and can form folds on the surface, and the nanofiber oil absorption layer is embedded into each fold of the porous cotton cloth layer.
The further improvement of the scheme is that the porous cotton cloth layer comprises a first cotton cloth layer and a second cotton cloth layer, the filter layer comprises a first filter membrane layer and a second filter membrane layer, the porosity of the first filter membrane layer and the porosity of the second filter membrane layer are 50% -60%, and the pore size is 1-10 mu m.
The further improvement of the scheme is that the penetrating structure is formed by micropores which are arranged in a criss-cross mode, the micropores are regularly or irregularly distributed with the heating sheet body, the pore size of the micropores is 80-1600 micrometers, and the micropores are circular, honeycomb or rectangular.
The further improvement of the scheme is that the permeation structure is a permeation gap, the permeation gap is formed in the heating sheet body through etching, and the permeation gap is uniformly distributed in the heating sheet body in an irregular shape.
The further improvement of the scheme is that the control circuit is packaged with a protective film, and the protective film comprises a stripping layer, a cementing layer, a fixing layer and an outer surface layer which are sequentially arranged from inside to outside.
The scheme is further improved in that the outer surface layer is prepared from the following raw materials in parts by weight: 70-90 parts of polyvinyl chloride, 1-4 parts of heat stabilizer, 5-8 parts of titanium dioxide and 2-8 parts of flame retardant, wherein the fixed layer is prepared from the following raw materials in parts by weight: 20-35 parts of plasticizer, 10-15 parts of polyurethane acrylate, 5-8 parts of epoxy acrylate and 5-8 parts of polyester acrylate.
The technical scheme is further improved in that the heat stabilizer is a calcium-zinc composite stabilizer, the flame retardant is a mixture of a dehydration catalyst ammonium polyphosphate, a carbonizing agent pentaerythritol and a foaming agent melamine, and the plasticizer is a mixture of one or more of dioctyl phthalate, tricresyl phosphate and trichloroethyl phosphate.
A method for manufacturing a heating element comprises the following steps:
step S1, selecting a monocrystalline silicon wafer with two polished surfaces, and cleaning and drying the monocrystalline silicon wafer;
step S2, arranging a layer of silicon dioxide on one surface of the dried monocrystalline silicon piece, and precipitating the silicon dioxide to form silicon nitride;
step S3, coating photoresist on the silicon nitride, transferring the pattern of the penetration region to the photoresist through a photoetching machine, and photoetching on the monocrystalline silicon through the photoetching machine to form the penetration region;
step S4, turning over the single crystal silicon, arranging a layer of silicon dioxide, and precipitating the silicon dioxide to form silicon nitride;
step S5, coating a photoresist on the silicon nitride of step S4, editing and transferring the patterns of the heating line and the control circuit to the photoresist by a photolithography machine, and then, heating the heating line and the control circuit by the photolithography machine;
and step S6, removing the photoresist, the silicon dioxide and the silicon nitride, and then attaching a protective film at the position of the control circuit to obtain the heating sheet body.
The protective film is prepared and formed by the following method;
step S11, adding polyvinyl chloride, a heat stabilizer, titanium dioxide and a flame retardant into a stirrer according to the weight components, stirring and mixing, and heating while mixing to form an outer surface layer;
step S12, adding a plasticizer, urethane acrylate, epoxy acrylate and polyester acrylate into a mixer according to the weight components, mixing to form a fixed layer, adding the fixed layer into an extruder, extruding and molding to form a sheet-shaped blank plate, and roughening the upper surface of the blank plate after extrusion;
step S13, coating the outer surface layer on the upper surface of the fixed layer through a coating machine according to the thickness requirement; drying the outer surface layer coated on the upper surface of the fixed layer by a dryer to form an outer surface layer; and coating a cementing layer on the lower surface of the fixed layer according to the thickness requirement, and bonding the stripping layer to obtain the protective film.
In a further improvement of the above scheme, in step S2, the single crystal silicon wafer is oxidized by wet oxygen and dry oxygen in sequence to form a layer of silicon dioxide, the oxidation temperature is controlled below 1100 ℃, and the wet oxygen and dry oxygen time is 5 hours.
An electronic cigarette comprises the heating element based on the monocrystalline silicon infiltration structure.
The invention has the beneficial effects that:
compared with the atomization heating piece of the existing electronic cigarette, the atomization heating piece of the electronic cigarette adopts the porous silicon heating piece formed by monocrystalline silicon photoetching or etching micropores, adopts the heating piece body formed by processing the monocrystalline silicon piece in the working process, and forms the porous penetration structure on the heating piece body through the processes of etching, photoetching and the like, is used for tobacco tar penetration of the electronic cigarette, penetrates the tobacco tar into the heating circuit, and generates heat through the heating circuit, so that the tobacco tar generates atomized gas, the atomization effect is better compared with the atomization effect of an atomization cotton core and a ceramic heating body, the service life is longer, the heating atomization is more uniform and reliable, and the taste of the electronic cigarette for smoking is also ensured. Specifically, a heating sheet body is arranged, a penetration area is formed on the heating sheet body through etching or photoetching, the heating sheet body is located on the lower side of the penetration area and is provided with a heating circuit, one side, located on the heating circuit, of monocrystalline silicon is provided with a control circuit through photoetching forming, the control circuit is electrically connected with the heating circuit, and the penetration area is provided with a penetration structure which can be used for liquid and gas to pass through. A control circuit and a heating circuit are formed on the monocrystalline silicon through photoetching, so that the control and heating are integrated into a whole, and the structure is reliable.
A preparation method of monocrystalline silicon comprises the following steps: step S1, selecting a monocrystalline silicon wafer with two polished surfaces, and cleaning and drying the monocrystalline silicon wafer; step S2, arranging a layer of silicon dioxide on one surface of the dried monocrystalline silicon piece, and precipitating the silicon dioxide to form silicon nitride; step S3, coating photoresist on the silicon nitride, transferring the pattern of the penetration region to the photoresist through a photoetching machine, and photoetching on the monocrystalline silicon through the photoetching machine to form the penetration region; step S4, turning over the single crystal silicon, arranging a layer of silicon dioxide, and precipitating the silicon dioxide to form silicon nitride; step S5, coating a photoresist on the silicon nitride of step S4, editing and transferring the patterns of the heating line and the control circuit to the photoresist by a photolithography machine, and then, heating the heating line and the control circuit by the photolithography machine; and step S6, removing the photoresist, the silicon dioxide and the silicon nitride, and then attaching a protective film at the position of the control circuit to obtain the heating sheet body. The heating sheet of the electronic cigarette is formed by photoetching the monocrystalline silicon through the steps, the processing efficiency is high, the electronic cigarette is suitable for mass production, and the service life of the atomization component of the electronic cigarette is prolonged.
Drawings
FIG. 1 is a schematic structural diagram of a heating element based on a single crystal silicon infiltration structure according to the present invention;
FIG. 2 is a schematic bottom view of the heater element of FIG. 1 based on a single-crystal silicon infiltration structure;
FIG. 3 is a schematic structural diagram of a protective film of the heating element based on a single-crystal silicon penetration structure in FIG. 1;
fig. 4 is a schematic structural diagram of the oil storage cotton of the heating element based on the monocrystalline silicon infiltration structure in fig. 1.
Description of reference numerals: the heating sheet comprises a heating sheet body 1, a penetration region 11, a penetration structure 111, a heating line 12, a control circuit 13, a protective film 131, a peeling layer 132, a cementing layer 133, a fixing layer 134, an outer surface layer 135, an oil delivery sheet 2, an oil storage cavity 21, oil storage cotton 22, a porous cotton cloth layer 221, a first cotton cloth layer 221a, a second cotton cloth layer 221b, a filter layer 222, a first filter membrane layer 222a, a second filter membrane layer 222b, a nanofiber oil absorption layer 223 and a nanofiber oil storage layer 224.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
As shown in fig. 1 to 4, a heating element based on a monocrystalline silicon infiltration structure includes a heating sheet body 1, a infiltration region 11 is formed on the heating sheet body 1 by etching or photolithography, a heating line 12 is disposed on the heating sheet body 1 below the infiltration region 11, a control circuit 13 is formed on one side of the monocrystalline silicon on the heating line 12 by photolithography, the control circuit 13 is electrically connected to the heating line 12, and an infiltration structure 111 for liquid and gas to pass through is opened on the infiltration region 11.
Heating plate body 1 deviates from heating line 12 and control circuit 13 one side and is equipped with oil transportation piece 2, oil transportation piece 2 laminates in heating plate body 1, and the further improvement does, and oil transportation piece 2 has the porous silicon that the oil transportation hole was formed for the monocrystalline silicon equipartition, oil transportation piece 2 corresponds osmotic area 11 and has seted up oil storage chamber 21, be equipped with oil storage cotton 22 in the oil storage chamber 21, regard as the oil transportation structure through porous silicon, with the leading-in to oil storage cotton 22 of tobacco tar, store the tobacco tar through oil storage cotton 22, guarantee the storage of tobacco tar, the fuel feeding is stable when the tobacco tar atomizes.
Referring to fig. 4, the oil-storing cotton 22 is a high-temperature resistant oil-storing cotton 22, and the oil-storing cotton 22 includes a porous cotton cloth layer 221, a filter layer 222, a nanofiber oil-absorbing layer 223, and a nanofiber oil-containing layer 224; the nanofiber oil containing layer 224 is arranged and combined in different orders, and the nanofiber oil containing layer 224 or the nanofiber oil absorption layer 223 is attached to the heating sheet body 1; dense pores with the same size are uniformly distributed on the porous cotton cloth layer 221, the porous cotton cloth layer 221 has certain contractility and can form wrinkles on the surface, and the nanofiber oil absorption layer 223 is embedded into each wrinkle of the porous cotton cloth layer 221.
Porous cotton layer 221 includes first cotton layer 221a and second cotton layer 221b, filter layer 222 includes first filter membrane layer 222a and second filter membrane layer 222b, the porosity of first filter membrane layer 222a and second filter membrane layer 222b is 50% ~ 60%, and the aperture size is 1 ~ 10 mu m, adopts cotton structure and filtration structure to be used for tobacco tar leading-in and filtration, can increase some taste elements in filter layer 222 in the in-service use, can make the electron cigarette to smoke and eat and experience better.
In this embodiment, infiltration structure 111 forms for the micropore that vertically and horizontally staggered set up, the micropore is the distribution of regular or irregular form and generates heat piece body 1, the aperture size of micropore is 80 microns ~ 1600 microns, the micropore shape is circular, honeycomb shape or rectangle, adopts microporous structure to permeate to the through-hole that adopts vertically and horizontally staggered to set up carries out the tobacco tar infiltration, and the tobacco tar infiltration is effectual, and heating atomization effect is good.
In another embodiment, the penetrating structure 111 is a penetrating gap formed in the heating sheet body 1 by etching, the penetrating gap is uniformly distributed in the heating sheet body 1 in an irregular shape, and the penetrating gap is used for penetration of the tobacco tar and can also be used for heating and atomizing the tobacco tar.
Referring to fig. 3, the control circuit 13 is packaged with a protective film 131, the protective film 131 includes a peeling layer 132, a glue layer 133, a fixing layer 134 and an outer surface layer 135, which are sequentially arranged from inside to outside, and the outer surface layer 135 is prepared from the following raw materials by weight: 70-90 parts of polyvinyl chloride, 1-4 parts of heat stabilizer, 5-8 parts of titanium dioxide and 2-8 parts of flame retardant, wherein the fixed layer 134 is prepared from the following raw materials in parts by weight: 20-35 parts of plasticizer, 10-15 parts of polyurethane acrylate, 5-8 parts of epoxy acrylate and 5-8 parts of polyester acrylate; the heat stabilizer is a calcium-zinc composite stabilizer, the flame retardant is a mixture of a dehydration catalyst ammonium polyphosphate, a carbonizing agent pentaerythritol and a foaming agent melamine, and the plasticizer is one or a mixture of dioctyl phthalate, tricresyl phosphate and trichloroethyl phosphate; the protective film 131 is used for covering and packaging the control circuit 13, so that the protective effect of the structure is ensured; the outer surface layer 135 and the fixed layer 134 formed by the components have the advantages of reliable structure, strong high-temperature resistance and no toxicity.
A preparation method of monocrystalline silicon comprises the following steps: step S1, selecting a monocrystalline silicon wafer with two polished surfaces, and cleaning and drying the monocrystalline silicon wafer; step S2, arranging a layer of silicon dioxide on one surface of the dried monocrystalline silicon piece, and precipitating the silicon dioxide to form silicon nitride; step S3, coating photoresist on the silicon nitride, transferring the pattern of the penetration region 11 to the photoresist through a photoetching machine, and photoetching on the monocrystalline silicon through the photoetching machine to form the penetration region 11; step S4, turning over the single crystal silicon, arranging a layer of silicon dioxide, and precipitating the silicon dioxide to form silicon nitride; step S5, coating a photoresist on the silicon nitride of step S4, editing the patterns of the heating line 12 and the control circuit 13 by a photo-etching machine, transferring the edited patterns to the photoresist, and then transferring the heating line 12 and the control circuit 13 by the photo-etching machine; step S6, removing the photoresist, silicon dioxide and silicon nitride, and then attaching the protective film 131 to the control circuit 13 to obtain the heating sheet body 1. The heating sheet of the electronic cigarette is formed by photoetching the monocrystalline silicon through the steps, the processing efficiency is high, the electronic cigarette is suitable for mass production, and the service life of the atomization component of the electronic cigarette is prolonged.
The protective film 131 is prepared by the following method;
step S11, adding polyvinyl chloride, a heat stabilizer, titanium dioxide and a flame retardant into a stirrer according to the weight components, stirring and mixing, and heating while mixing to form an outer surface layer 135; step S12, adding a plasticizer, urethane acrylate, epoxy acrylate and polyester acrylate into a mixer according to the weight components, mixing to form a fixed layer 134, adding the fixed layer 134 into an extruder, extruding and molding to form a sheet-shaped blank plate, and roughening the upper surface of the blank plate after extrusion; step S13, coating the outer surface layer 135 on the upper surface of the fixed layer 134 by a coater according to the thickness requirement; drying the outer skin 135 coated on the upper surface of the fixed layer 134 by a dryer to form an outer skin 135; the pellicle film 131 is obtained by coating a bonding layer 133 on the lower surface of the fixing layer 134 and bonding the release layer 132 thereto as required. The protective film 131 prepared by the steps has good protective effect and strong high-temperature resistance of the protective film 131.
In step S2, a layer of silicon dioxide is arranged on the monocrystalline silicon wafer by oxidizing according to the sequence of wet oxygen-dry oxygen, the oxidizing temperature is controlled below 1100 ℃, and the time of both wet oxygen and dry oxygen is 5 h.
According to the invention, the porous silicon heating sheet formed by photoetching or etching micropores of monocrystalline silicon is adopted, in the working process, the heating sheet body 1 formed by processing and forming the monocrystalline silicon sheet is adopted, the porous penetration structure 111 is formed on the heating sheet body 1 through the processes of etching or photoetching and the like, the porous penetration structure is used for the tobacco tar penetration of an electronic cigarette, the tobacco tar penetrates into the heating circuit 12, and the heating circuit 12 generates heat, so that the tobacco tar generates atomized gas, the atomization effect is better compared with that of an atomized cotton core and a ceramic heating element, the service life is longer, the heating atomization is more uniform and reliable, and the taste of the electronic cigarette is ensured. Specifically, a heating sheet body 1 is provided, a penetration region 11 is formed on the heating sheet body 1 through etching or photolithography, a heating line 12 is provided on the lower side of the penetration region 11 of the heating sheet body 1, a control circuit 13 is formed on one side of the monocrystalline silicon on the heating line 12 through photolithography, the control circuit 13 is electrically connected with the heating line 12, and a penetration structure 111 for liquid and gas to pass through is provided on the penetration region 11. A control circuit 13 and a heating circuit 12 are formed on the monocrystalline silicon through photoetching, so that the control and heating are integrated into a whole, and the structure is reliable.
The utility model provides an electron cigarette, the heating element who generates heat above adopting piece body 1 atomizes to the tobacco tar heating, and heating atomization effect is good, long service life.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (10)

1.一种基于单晶硅渗透结构的发热元件,其特征在于:包括发热片本体,所述发热片本体上通过蚀刻或光刻形成有渗透区,所述发热片本体位于所述渗透区的下侧设有发热线路,所述单晶硅位于发热线路的一侧通过光刻成型有控制电路,所述控制电路与发热线路电性连接,所述渗透区开设有可用于液体和气体通过的渗透结构。1. a heating element based on monocrystalline silicon permeation structure, is characterized in that: comprise a heating element body, and a penetration area is formed on the heating element body by etching or photolithography, and the heating element body is located in the infiltration area. There is a heating circuit on the lower side, the single crystal silicon is located on one side of the heating circuit and a control circuit is formed by photolithography, the control circuit is electrically connected with the heating circuit, and the penetration area is provided with a hole for liquid and gas to pass through. Penetration structure. 2.根据权利要求1所述的基于单晶硅渗透结构的发热元件,其特征在于:所述发热片本体背离发热线路和控制电路一面设有输油片,所述输油片贴合于发热片本体。2. The heating element based on the monocrystalline silicon permeation structure according to claim 1, wherein the heating element body is provided with an oil feeding sheet on one side away from the heating circuit and the control circuit, and the oil feeding sheet is attached to the heating element. slice body. 3.根据权利要求2所述的基于单晶硅渗透结构的发热元件,其特征在于:所述输油片为单晶硅均布有输油孔形成的多孔硅,所述输油片对应渗透区开设有储油腔,所述储油腔内设有储油棉,所述储油棉为耐高温储油棉,所述储油棉包括多孔棉布层、过滤层、纳米纤维吸油层和纳米纤维容油层;所述纳米纤维容油层为不同顺序的排布和组合,所述纳米纤维容油层或纳米纤维吸油层贴合于发热片本体;所述多孔棉布层均匀分布有大小一致的致密孔隙,所述多孔棉布层具有一定的收缩性,可以在表面形成褶皱,所述纳米纤维吸油层嵌入多孔棉布层每一个褶皱中。3. The heating element based on monocrystalline silicon permeation structure according to claim 2, characterized in that: the oil transport sheet is porous silicon formed by monocrystalline silicon uniformly distributed with oil transport holes, and the oil transport sheet corresponds to permeation An oil storage cavity is opened in the oil storage cavity, and an oil storage cotton is arranged in the oil storage cavity, and the oil storage cotton is a high temperature resistant oil storage cotton. Fiber oil-accommodating layer; the nanofiber oil-accommodating layers are arranged and combined in different orders, and the nanofiber oil-accommodating layer or nanofiber oil-absorbing layer is attached to the heating plate body; the porous cotton cloth layer is uniformly distributed with dense pores of the same size , the porous cotton cloth layer has certain shrinkage, and can form wrinkles on the surface, and the nanofiber oil-absorbing layer is embedded in each fold of the porous cotton cloth layer. 4.根据权利要求3所述的基于单晶硅渗透结构的发热元件,其特征在于:所述多孔棉布层包括第一棉布层和第二棉布层,所述过滤层包括第一过滤膜层和第二过滤膜层,所述第一过滤膜层和第二过滤膜层的孔隙率为50%~60%,孔径大小为1~10μm。4 . The heating element based on monocrystalline silicon permeation structure according to claim 3 , wherein the porous cotton cloth layer comprises a first cotton cloth layer and a second cotton cloth layer, and the filter layer comprises a first filter membrane layer and For the second filter membrane layer, the porosity of the first filter membrane layer and the second filter membrane layer is 50%-60%, and the pore size is 1-10 μm. 5.根据权利要求1所述的基于单晶硅渗透结构的发热元件,其特征在于:所述渗透结构为纵横交错设置的微孔形成,所述微孔呈规则或不规则状分布发热片本体,所述微孔的孔径尺寸为80微米~1600微米,所述微孔形状为圆形、蜂窝形状或矩形。5. The heating element based on a single crystal silicon permeation structure according to claim 1, wherein the permeation structure is formed of micropores arranged in a crisscross pattern, and the micropores are distributed in the body of the heating element in a regular or irregular shape. , the pore size of the micropores is 80 micrometers to 1600 micrometers, and the shape of the micropores is a circle, a honeycomb shape or a rectangle. 6.根据权利要求1所述的基于单晶硅渗透结构的发热元件,其特征在于:所述渗透结构为渗透缝隙,所述渗透缝隙通过蚀刻成型于发热片本体,所述渗透缝隙呈不规则形状均布于发热片本体。6 . The heating element based on a monocrystalline silicon permeation structure according to claim 1 , wherein the permeation structure is a permeation gap, the permeation gap is formed on the heating element body by etching, and the permeation gap is irregular. 7 . The shapes are evenly distributed on the heating plate body. 7.根据权利要求1所述的基于单晶硅渗透结构的发热元件,其特征在于:所述控制电路封装有防护膜,所述防护膜包括由里到外依次设置的剥离层、胶合层、固定层及外表层,所述外表层由以下原料的重量组分制备形成:7 . The heating element based on monocrystalline silicon permeation structure according to claim 1 , wherein the control circuit is encapsulated with a protective film, and the protective film comprises a peeling layer, an adhesive layer, a A fixed layer and an outer layer, the outer layer is prepared from the weight components of the following raw materials: 聚氯乙烯70-90份、热稳定剂1-4份,二氧化钛5-8份和阻燃剂2-8份,所述固定层按照份数,由以下原料制备而成:增塑剂20-35份、聚氨酯丙烯酸酯10-15份、环氧丙烯酸酯5-8份、聚酯丙烯酸酯5-8份;70-90 parts of polyvinyl chloride, 1-4 parts of heat stabilizer, 5-8 parts of titanium dioxide and 2-8 parts of flame retardant, the fixed layer is prepared from the following raw materials according to the number of parts: plasticizer 20- 35 parts, 10-15 parts of polyurethane acrylate, 5-8 parts of epoxy acrylate, 5-8 parts of polyester acrylate; 所述热稳定剂采用钙锌复合稳定剂,所述阻燃剂为脱水催化剂聚磷酸铵、碳化剂季戊四醇和发泡剂三聚氰胺的混合体,所述增塑剂采用邻苯二甲酸二辛酯、磷酸三甲酚酯和磷酸三氯乙酯的一种或多种的混合物。The thermal stabilizer adopts calcium-zinc composite stabilizer, the flame retardant is a mixture of dehydration catalyst ammonium polyphosphate, carbonizing agent pentaerythritol and foaming agent melamine, and the plasticizer adopts dioctyl phthalate, A mixture of one or more of tricresyl phosphate and trichloroethyl phosphate. 8.一种权利要求1~7任意一项所述的发热元件的制备方法,其特征在于:包括如下步骤:8. A method for preparing a heating element according to any one of claims 1 to 7, characterized in that it comprises the following steps: 步骤S1,选取双面经过抛光的单晶硅片,并将单晶硅片进行清洗和干燥;Step S1, selecting single-crystal silicon wafers with both sides polished, and cleaning and drying the single-crystal silicon wafers; 步骤S2,在干燥后的单晶硅片一面上设置一层二氧化硅,并将二氧化硅沉淀形成氮化硅;Step S2, disposing a layer of silicon dioxide on one side of the dried single crystal silicon wafer, and precipitating the silicon dioxide to form silicon nitride; 步骤S3,在氮化硅上涂覆上光刻胶,通过光刻机将渗透区的图案转移到光刻胶上、并通过光刻机在单晶硅上光刻形成渗透区;In step S3, a photoresist is coated on the silicon nitride, the pattern of the permeation region is transferred to the photoresist by a photolithography machine, and the permeation region is formed by photolithography on the monocrystalline silicon by a photolithography machine; 步骤S4,将单晶硅翻面,并设置一层二氧化硅,并将二氧化硅沉淀形成氮化硅;Step S4, turning over the single crystal silicon, setting a layer of silicon dioxide, and precipitating the silicon dioxide to form silicon nitride; 步骤S5,在步骤S4的氮化硅上涂覆上光刻胶,通过光刻机将发热线路和控制电路的图形进行编辑、并转移到光刻胶上,后通过光刻机将发热线路和控制电路;In step S5, photoresist is coated on the silicon nitride in step S4, and the pattern of the heating circuit and the control circuit is edited and transferred to the photoresist by the photolithography machine, and then the heating circuit and the control circuit are edited by the photolithography machine. Control circuit; 步骤S6,将光刻胶、二氧化硅和氮化硅去除,后在控制电路位置贴上防护膜,得到发热片本体。In step S6, the photoresist, silicon dioxide and silicon nitride are removed, and then a protective film is pasted on the position of the control circuit to obtain a heating element body. 所述防护膜由以下方法制备形成;The protective film is prepared and formed by the following method; 步骤S11,按照重量组分将聚氯乙烯、热稳定剂,二氧化钛和阻燃剂加入到搅拌机中进行搅拌混合,在混合的同时进行升温处理,形成外表层;Step S11, adding polyvinyl chloride, heat stabilizer, titanium dioxide and flame retardant to the mixer according to the weight components for stirring and mixing, and performing heating treatment while mixing to form an outer layer; 步骤S12,按照重量组分将增塑剂、聚氨酯丙烯酸酯、环氧丙烯酸酯和聚酯丙烯酸酯加入混合机中进行混合,形成固定层,将固定层加入挤出机中进行挤出成型为片状胚板,并且在挤出后对胚板上表面进行糙化处理;Step S12, adding plasticizer, urethane acrylate, epoxy acrylate and polyester acrylate into a mixer for mixing according to weight components to form a fixed layer, and adding the fixed layer to an extruder for extrusion molding into a sheet. shape embryo plate, and roughening the surface of the embryo plate after extrusion; 步骤S13,将外表层按照厚度要求,通过涂布机涂布在固定层的上表面;通过干燥机对涂布在固定层上表面的外表层进行干燥处理,形成外表层;按照厚度要求,在固定层下表面涂布胶合层,并粘合剥离层,得到防护膜。Step S13, the outer surface layer is coated on the upper surface of the fixed layer by a coating machine according to the thickness requirement; the outer surface layer coated on the upper surface of the fixed layer is dried by a dryer to form an outer surface layer; The adhesive layer is coated on the lower surface of the fixed layer, and the peeling layer is adhered to obtain a protective film. 9.根据权利要求8所述的发热元件的制备方法,其特征在于:所述步骤S2中,单晶硅片按照湿氧-干氧的顺序进行氧化设置一层二氧化硅,氧化温度控制在1100℃以下,湿氧和干氧时间均为5h。9 . The method for preparing a heating element according to claim 8 , wherein in the step S2 , the single-crystal silicon wafer is oxidized in the order of wet oxygen-dry oxygen to form a layer of silicon dioxide, and the oxidation temperature is controlled at 9 . Below 1100℃, the wet oxygen and dry oxygen time are both 5h. 10.一种电子烟,包括权利要求1~7任意一项所述的基于单晶硅渗透结构的发热元件。10 . An electronic cigarette, comprising the heating element based on a single crystal silicon permeation structure according to any one of claims 1 to 7 .
CN202111300268.3A 2021-11-04 2021-11-04 Heating element based on monocrystalline silicon permeation structure, preparation method and electronic cigarette Pending CN113854641A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111300268.3A CN113854641A (en) 2021-11-04 2021-11-04 Heating element based on monocrystalline silicon permeation structure, preparation method and electronic cigarette

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111300268.3A CN113854641A (en) 2021-11-04 2021-11-04 Heating element based on monocrystalline silicon permeation structure, preparation method and electronic cigarette

Publications (1)

Publication Number Publication Date
CN113854641A true CN113854641A (en) 2021-12-31

Family

ID=78986993

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111300268.3A Pending CN113854641A (en) 2021-11-04 2021-11-04 Heating element based on monocrystalline silicon permeation structure, preparation method and electronic cigarette

Country Status (1)

Country Link
CN (1) CN113854641A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116460956A (en) * 2023-03-30 2023-07-21 深圳市吉迩科技有限公司 A porous ceramic sandwich injection molding method and device
WO2023142467A1 (en) * 2022-01-28 2023-08-03 深圳市克莱鹏科技有限公司 E-liquid guide structure based on porous silicon atomization sheet, and electronic cigarette
WO2023142468A1 (en) * 2022-01-26 2023-08-03 深圳市克莱鹏科技有限公司 Atomization structure based on porous silicon atomization sheet, and electronic cigarette
WO2023151261A1 (en) * 2022-02-09 2023-08-17 深圳市克莱鹏科技有限公司 E-cigarette based on porous silicon atomization piece

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953264A (en) * 1974-08-29 1976-04-27 International Business Machines Corporation Integrated heater element array and fabrication method
JP2004216601A (en) * 2003-01-09 2004-08-05 Sony Corp Liquid ejection head and liquid ejection device
US20160007653A1 (en) * 2014-07-11 2016-01-14 Xiang Zheng Tu MEMS Vaporizer
CN107042024A (en) * 2017-03-28 2017-08-15 北京化工大学 A kind of melt nanofiber ultra high efficiency oil absorbent material
CN108158040A (en) * 2018-01-03 2018-06-15 云南中烟工业有限责任公司 The MEMS electronic cigarettes chip and its manufacturing method of a kind of consistent heat generation
CN210353141U (en) * 2019-05-31 2020-04-21 合肥微纳传感技术有限公司 MEMS electron smog spinning disk atomiser
CN111788006A (en) * 2018-03-07 2020-10-16 虹霓机械制造有限公司 Method for producing an electrically operable heating body for an inhaler
WO2021027338A1 (en) * 2019-08-13 2021-02-18 彭晓峰 New type of vaporization core
CN113174217A (en) * 2021-03-31 2021-07-27 淮安维嘉益集成科技有限公司 Preparation method of silicon-free protective film
CN216493513U (en) * 2021-11-04 2022-05-13 深圳市克莱鹏科技有限公司 Heating element and electron cigarette based on monocrystalline silicon infiltration structure

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953264A (en) * 1974-08-29 1976-04-27 International Business Machines Corporation Integrated heater element array and fabrication method
JP2004216601A (en) * 2003-01-09 2004-08-05 Sony Corp Liquid ejection head and liquid ejection device
US20160007653A1 (en) * 2014-07-11 2016-01-14 Xiang Zheng Tu MEMS Vaporizer
CN107042024A (en) * 2017-03-28 2017-08-15 北京化工大学 A kind of melt nanofiber ultra high efficiency oil absorbent material
CN108158040A (en) * 2018-01-03 2018-06-15 云南中烟工业有限责任公司 The MEMS electronic cigarettes chip and its manufacturing method of a kind of consistent heat generation
CN111788006A (en) * 2018-03-07 2020-10-16 虹霓机械制造有限公司 Method for producing an electrically operable heating body for an inhaler
CN210353141U (en) * 2019-05-31 2020-04-21 合肥微纳传感技术有限公司 MEMS electron smog spinning disk atomiser
WO2021027338A1 (en) * 2019-08-13 2021-02-18 彭晓峰 New type of vaporization core
CN113174217A (en) * 2021-03-31 2021-07-27 淮安维嘉益集成科技有限公司 Preparation method of silicon-free protective film
CN216493513U (en) * 2021-11-04 2022-05-13 深圳市克莱鹏科技有限公司 Heating element and electron cigarette based on monocrystalline silicon infiltration structure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023142468A1 (en) * 2022-01-26 2023-08-03 深圳市克莱鹏科技有限公司 Atomization structure based on porous silicon atomization sheet, and electronic cigarette
WO2023142467A1 (en) * 2022-01-28 2023-08-03 深圳市克莱鹏科技有限公司 E-liquid guide structure based on porous silicon atomization sheet, and electronic cigarette
WO2023151261A1 (en) * 2022-02-09 2023-08-17 深圳市克莱鹏科技有限公司 E-cigarette based on porous silicon atomization piece
CN116460956A (en) * 2023-03-30 2023-07-21 深圳市吉迩科技有限公司 A porous ceramic sandwich injection molding method and device

Similar Documents

Publication Publication Date Title
CN113854641A (en) Heating element based on monocrystalline silicon permeation structure, preparation method and electronic cigarette
CN112021674B (en) Heat-not-burn tobacco product and method of manufacturing the same
CN216493513U (en) Heating element and electron cigarette based on monocrystalline silicon infiltration structure
JP4974758B2 (en) Humidifying member and humidifier using the same
CN113966868A (en) Double-layer wafer infiltration atomizing structure that generates heat and contain its electron cigarette
JP2019515692A (en) Ultrasonic atomized sheet and method for producing the same, ultrasonic atomizer, electronic cigarette
CN109674094A (en) Electronic smoke atomizer and electronic cigarette, atomizing component preparation method
CN113729300A (en) Heating sheet based on honeycomb permeation structure and electronic cigarette comprising heating sheet
CN114370783B (en) Porous ceramics and their manufacturing methods
CN113907418A (en) Porous silicon heating structure with oil storage packaging structure and electronic cigarette comprising same
CN113729299A (en) Porous structure-based heating silicon wafer and electronic cigarette comprising same
CN113812691A (en) Silicon heating sheet based on staggered porous structure and electronic cigarette comprising same
CN113925205A (en) Multi-functional integrated circuit's porous silicon piece that generates heat and contain its electron cigarette
CN216493477U (en) Double-deck wafer infiltration atomizing structure that generates heat and contain its electron cigarette
CN113925204A (en) Porous silicon heating sheet of integrated heating circuit and electronic cigarette comprising same
CN216493476U (en) Porous silicon heating structure with oil storage packaging structure and electronic cigarette comprising same
CN216165140U (en) Multi-functional integrated circuit's porous silicon piece that generates heat and contain its electron cigarette
KR102754416B1 (en) Ceramic atomizer with porous ceramic sheet attached
CN216165203U (en) Porous silicon heating structure of integrated induction circuit and electronic cigarette comprising same
CN113786009A (en) A vertical porous silicon infiltration heating atomization structure and an electronic cigarette containing the same
CN113602659A (en) Electronic cigarette porous ceramic heating core with embedded heating sheet and preparation method thereof
CN216493510U (en) Integrated control circuit's piece that generates heat and contain its electron cigarette
CN212678365U (en) Heating components and heat not burn devices
CN113729302A (en) Wafer heating sheet with packaging structure and electronic cigarette comprising wafer heating sheet
CN215649254U (en) A ceramic atomizing core for electronic cigarette based on bidirectional porous structure

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20230413

Address after: 523000 Room 201, building 1, No. 13, Chigang Fuma Road, Humen Town, Dongguan City, Guangdong Province

Applicant after: Dongguan keleipeng Atomization Technology Co.,Ltd.

Address before: 518000 1st and 2nd floors, building 23, Changxing Science Park, Shayi community, Shajing street, Bao'an District, Shenzhen City, Guangdong Province

Applicant before: SHENZHEN KELAI PENG TECHNOLOGY Co.,Ltd.