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CN113343463B - Remaining life prediction method of subway traction rectifier diode considering aging process - Google Patents

Remaining life prediction method of subway traction rectifier diode considering aging process Download PDF

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CN113343463B
CN113343463B CN202110637999.0A CN202110637999A CN113343463B CN 113343463 B CN113343463 B CN 113343463B CN 202110637999 A CN202110637999 A CN 202110637999A CN 113343463 B CN113343463 B CN 113343463B
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林圣�
黄宇剑
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Southwest Jiaotong University
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Abstract

The invention discloses a method for predicting the residual life of a diode of a subway traction rectifier by considering an aging process, which specifically comprises the following steps: collecting forward conduction current, radiator temperature and environment temperature outside a rectifier cabinet of a subway traction substation rectifier diode within 24 hours of a day from a point 0; calculating the current diode thermal network model parameters by using a parameter identification method, and calculating the junction temperature of the diode at the 2 nd day according to the current diode thermal network model parameters; and updating the thermal resistance value of the diode according to the diode junction temperature damage value on the 2 nd day, and repeating the steps until the damage value is greater than or equal to 1 for the first time, so that the predicted value of the residual service life of the diode on the sampling day can be obtained. According to the method, the monitoring data of the temperature of the radiator in the rectifier temperature protection are utilized to identify the heat network model parameters to obtain the heat network model parameters of the diode in the current state, the thermal resistance is used as the aging characteristic quantity, the influence of aging damage on the junction temperature of the device is considered, and the accuracy of residual life prediction is improved.

Description

考虑老化进程的地铁牵引整流器二极管剩余寿命预测方法Remaining life prediction method of subway traction rectifier diode considering aging process

技术领域technical field

本发明属于整流器二极管寿命预测技术领域，尤其涉及一种考虑老化进程的地铁牵引整流器二极管剩余寿命预测方法。The invention belongs to the technical field of rectifier diode life prediction, and in particular relates to a method for predicting the remaining life of a subway traction rectifier diode considering the aging process.

背景技术Background technique

二极管作为地铁牵引整流器中的核心部件，其准确的寿命预测对牵引供电系统可靠运行十分重要。根据电力电子系统可靠性调研，功率器件是变流系统中失效率最高的部件，约占34％，在各类失效因素中，约55％的电力电子系统失效主要由温度因素诱发。由于地铁运行中频繁地启动与制动，导致整流器输出电流波动快、摆幅大，从而造成其二极管结温波动剧烈；同时，地铁整流柜柜内无风机，装置的冷却方式为空气自然对流换热，散热条件较差。这些因素都会引起整流器二极管的疲劳损伤，甚至导致二极管的开、短路故障。地铁牵引整流器设计寿命通常在30年以上，在较长的服役周期中为预防其关键部件——二极管随着时间推移老化失效而导致重大事故的发生，有必要研究二极管剩余寿命预测方法，为牵引整流机组的运维和检修安排提供指导。As the core component of the subway traction rectifier, the accurate life prediction of the diode is very important for the reliable operation of the traction power supply system. According to the reliability survey of power electronic systems, power devices are the components with the highest failure rate in converter systems, accounting for about 34%. Among various failure factors, about 55% of power electronic system failures are mainly induced by temperature factors. Due to frequent starting and braking during subway operation, the output current of the rectifier fluctuates rapidly and has a large swing, which causes the diode junction temperature to fluctuate violently. At the same time, there is no fan in the subway rectifier cabinet, and the cooling method of the device is air natural convection. Hot, poor heat dissipation conditions. These factors will cause fatigue damage to the rectifier diodes, and even lead to open and short-circuit failures of the diodes. The design life of subway traction rectifiers is usually more than 30 years. In order to prevent the occurrence of major accidents due to the aging and failure of its key components, the diodes, over time, it is necessary to study the method of predicting the remaining life of the diodes. Provide guidance on the operation and maintenance and maintenance arrangements of the rectifier units.

目前对二极管等功率器件的寿命预测主要采用线性损伤模型，并在预测过程仅使用产品数据手册中提供的热参数，并未考虑器件老化造成的热参数变化。因此有必要研究考虑老化进程的地铁牵引整流器二极管剩余寿命预测方法，提高寿命预测的准确性。At present, the life prediction of power devices such as diodes mainly adopts the linear damage model, and only uses the thermal parameters provided in the product data sheet in the prediction process, and does not consider the thermal parameter changes caused by device aging. Therefore, it is necessary to study the method for predicting the remaining life of the diodes of subway traction rectifiers considering the aging process, so as to improve the accuracy of life prediction.

发明内容SUMMARY OF THE INVENTION

为能计及老化进程对二极管热阻的影响，提高剩余寿命预测精度。本发明提供一种考虑老化进程的地铁牵引整流器二极管剩余寿命预测方法。In order to take into account the influence of the aging process on the thermal resistance of the diode, the prediction accuracy of the remaining life can be improved. The invention provides a method for predicting the remaining life of a subway traction rectifier diode considering the aging process.

本发明的一种考虑老化进程的地铁牵引整流器二极管剩余寿命预测方法，包括以下步骤：A method for predicting the remaining life of a subway traction rectifier diode considering the aging process of the present invention includes the following steps:

步骤1：以Δt为采样间隔，采集从0点开始24小时内的地铁牵引变电所整流器二极管正向导通电流iF(t)、散热器温度Th(t)和整流柜外环境温度Ta(t)。Step 1: Take Δt as the sampling interval, collect the forward conduction current i F (t) of the rectifier diode of the subway traction substation within 24 hours from 0:00, the radiator temperature T h (t) and the ambient temperature T outside the rectifier cabinet a (t).

步骤2：根据二极管产品数据手册提供的正向伏安特性曲线，求得二极管正向导通电压iF(t)所对应的正向导通电压uF(t)；根据二极管产品数据手册提供的瞬态热阻抗曲线，拟合得到初始状态下二极管热阻R1(0)，二极管热容C1(0)，散热器热阻Rh(0)，散热器热容Ch(0)；根据式(1)计算得到初始状态下的辨识量θ1(0)、θ2(0)、θ3(0)和θ4(0)。Step 2: According to the forward volt-ampere characteristic curve provided by the diode product data sheet, obtain the forward conduction voltage u F (t) corresponding to the diode forward conduction voltage i F (t); The state thermal impedance curve is fitted to obtain the diode thermal resistance R 1(0) , the diode thermal capacity C 1(0) , the heat sink thermal resistance R h(0) , and the heat sink thermal capacity C h(0) in the initial state; Formula (1) calculates the identification quantities θ 1(0) , θ 2(0) , θ 3(0) and θ 4(0) in the initial state.

Figure BDA0003105961320000021
Figure BDA0003105961320000021

步骤3：根据式(2)计算t时刻的二极管导通损耗P(t)：Step 3: Calculate the diode conduction loss P(t) at time t according to equation (2):

P(t)＝iF(t)uF(t) (2)P(t)=i F (t)u F (t) (2)

步骤4：使用0点开始24小时内的二极管导通损耗、散热器温度和整流柜外环境温度数据，根据式(3)，利用最小二乘法辨识得到当天24点时的辨识量θ1(d0)、θ2(d0)、θ3(d0)和θ4(d0)。Step 4: Using the diode conduction loss, radiator temperature and ambient temperature data outside the rectifier cabinet within 24 hours from 0:00, according to formula (3), use the least squares method to identify the identification value θ 1 (d0 ) at 24:00 of the day ) , θ 2(d0) , θ 3(d0) and θ 4(d0) .

Th(t)＝θ1(d0)Th(t-1)+θ2(d0)Th(t-2)+θ3(d0)P(t-1)+θ4(d0)Ta(t-1) (3)T h (t)=θ 1(d0) T h (t-1)+θ 2(d0) T h (t-2)+θ 3(d0) P(t-1)+θ 4(d0) T a (t-1) (3)

步骤5：计算24点时二极管热阻改变量系数g1(d0)和散热器热阻改变量系数gh(d0)。Step 5: Calculate the coefficient of change in diode thermal resistance g 1(d0) and the coefficient of change in heat sink thermal resistance g h(d0) at 24 points.

Figure BDA0003105961320000022
Figure BDA0003105961320000022

步骤6：计算24点时的热网络模型参数。Step 6: Calculate the thermal network model parameters at 24 points.

Figure BDA0003105961320000023
Figure BDA0003105961320000023

步骤7：计算当前二极管损伤值D(d0)。Step 7: Calculate the current diode damage value D (d0) .

Figure BDA0003105961320000024
Figure BDA0003105961320000024

步骤8：根据当天24点时的热网络模型参数计算采样日后一天的二极管结温。Step 8: Calculate the diode junction temperature one day after the sampling day according to the thermal network model parameters at 24:00 of the day.

Figure BDA0003105961320000031
Figure BDA0003105961320000031

步骤9：使用雨流计数法对二极管结温进行统计分析，把结温变化简化为若干个热载荷循环，提取单次热载荷中结温幅值波动的大小ΔTji，单次热载荷的结温平均值Tjmi和不同热载荷的加载次数ni，计算单次热载荷下对二极管造成的损伤di。Step 9: Use the rain flow counting method to perform statistical analysis on the diode junction temperature, simplify the junction temperature change into several thermal load cycles, extract the magnitude of the junction temperature amplitude fluctuation ΔT ji in a single thermal load, and the junction temperature of a single thermal load. The average temperature T jmi and the loading times ni of different thermal loads are used to calculate the damage d i caused to the diode under a single thermal load.

Figure BDA0003105961320000032
Figure BDA0003105961320000032

式中：参数A、α为通过试验测试数据的拟合得到的寿命模型参数，A＝97.2231，α＝3.1292，Ea为激发能量常数，Ea＝9.89×10-20J，kB为波尔兹曼常量，kB＝1.38×10-23J/K。In the formula: parameters A and α are the life model parameters obtained by fitting the test data, A=97.2231, α=3.1292, E a is the excitation energy constant, E a =9.89×10 -20 J, k B is the wave Ertzmann constant, k B =1.38×10 −23 J/K.

步骤10：计算采样日一天后的二极管损伤值D(d1)：Step 10: Calculate the diode damage value D (d1) one day after the sampling day:

Figure BDA0003105961320000033
Figure BDA0003105961320000033

其中：k为热载荷种类数。Where: k is the number of thermal load types.

步骤11：更新采样日一天后的二极管热阻值R1(d1)：Step 11: Update the diode thermal resistance value R 1(d1) one day after the sampling day:

R1(d1)＝R1(0)(1+a·D(d1)) (10)R 1(d1) =R 1(0) (1+a·D (d1) ) (10)

步骤12：计算采样日m天后的二极管损伤值，其中m为大于等于2的整数。Step 12: Calculate the damage value of the diode after m days of sampling days, where m is an integer greater than or equal to 2.

重复步骤8-9计算采样日m天后的二极管结温和单次热载荷下对二极管造成的损伤；Repeat steps 8-9 to calculate the diode junction temperature and damage to the diode under a single thermal load after m days of sampling days;

利用下式计算采样日m天后的二极管损伤值D(d1)和二极管热阻值R1(dm)。Use the following formula to calculate the diode damage value D (d1) and the diode thermal resistance value R 1(dm) after m days of sampling.

Figure BDA0003105961320000034
Figure BDA0003105961320000034

R1(dm)＝R1(0)(1+a·D(dm)) (12)R 1(dm) =R 1(0) (1+a·D (dm) ) (12)

当D(dm)首次大于等于1时，m即为二极管在采样日时的剩余寿命预测值。When D (dm) is greater than or equal to 1 for the first time, m is the predicted value of the remaining life of the diode on the sampling day.

进一步的，采样间隔Δt为0.1s。Further, the sampling interval Δt is 0.1s.

本发明的有益技术效果为：The beneficial technical effects of the present invention are:

本发明利用整流器温度保护中散热器温度的监控数据，对热网络模型参数进行辨识，得到二极管当前状态下的热网络模型参数，即二极管当前老化状态。然后以热阻作为老化特征量，通过损伤值计算二极管老化后的热阻，并将二极管老化过程离散为若干个阶段，进行分段损伤累积，考虑了老化损伤对器件结温的影响，提高了剩余寿命预测的精度。The invention uses the monitoring data of the radiator temperature in the rectifier temperature protection to identify the thermal network model parameters, and obtains the thermal network model parameters in the current state of the diode, that is, the current aging state of the diode. Then the thermal resistance is used as the aging characteristic quantity, and the thermal resistance of the diode after aging is calculated by the damage value, and the aging process of the diode is discretely divided into several stages, and the damage is accumulated in segments. Considering the effect of aging damage on the junction temperature of the device, it improves The accuracy of the remaining life prediction.

附图说明Description of drawings

图1为本发明适用的地铁牵引整流器二极管二阶连续热网络模型。FIG. 1 is a second-order continuous thermal network model of a diode of a subway traction rectifier to which the present invention is applicable.

图2为仿真实验中二极管正向导通电流信号曲线图。FIG. 2 is a graph of the forward conduction current signal of the diode in the simulation experiment.

图3为仿真实验中散热器温度信号曲线图。Figure 3 is a graph of the temperature signal of the radiator in the simulation experiment.

图4为仿真实验中二极管导通损耗曲线图。FIG. 4 is a graph of the conduction loss of the diode in the simulation experiment.

图5为仿真实验中二极管结温曲线图。Figure 5 is a graph of the diode junction temperature curve in the simulation experiment.

图6为仿真实验中二极管损伤值曲线图。FIG. 6 is a graph showing the damage value of the diode in the simulation experiment.

具体实施方式Detailed ways

下面结合附图和仿真实验对本发明做进一步详细说明。The present invention will be further described in detail below with reference to the accompanying drawings and simulation experiments.

本发明的一种考虑老化进程的地铁牵引整流器二极管剩余寿命预测方法，包括以下步骤：A method for predicting the remaining life of a subway traction rectifier diode considering the aging process of the present invention includes the following steps:

步骤1：以Δt为采样间隔，采集从0点开始24小时内的地铁牵引变电所整流器二极管正向导通电流iF(t)、散热器温度Th(t)和整流柜外环境温度Ta(t)。Step 1: Take Δt as the sampling interval, collect the forward conduction current i F (t) of the rectifier diode of the subway traction substation within 24 hours from 0:00, the radiator temperature T h (t) and the ambient temperature T outside the rectifier cabinet a (t).

步骤2：根据二极管产品数据手册提供的正向伏安特性曲线，求得二极管正向导通电压iF(t)所对应的正向导通电压uF(t)；根据二极管产品数据手册提供的瞬态热阻抗曲线，拟合得到初始状态下二极管热阻R1(0)，二极管热容C1(0)，散热器热阻Rh(0)，散热器热容Ch(0)；根据式(1)计算得到初始状态下的辨识量θ1(0)、θ2(0)、θ3(0)和θ4(0)。Step 2: According to the forward volt-ampere characteristic curve provided by the diode product data sheet, obtain the forward conduction voltage u F (t) corresponding to the diode forward conduction voltage i F (t); The state thermal impedance curve is fitted to obtain the diode thermal resistance R 1(0) , the diode thermal capacity C 1(0) , the heat sink thermal resistance R h(0) , and the heat sink thermal capacity C h(0) in the initial state; Formula (1) calculates the identification quantities θ 1(0) , θ 2(0) , θ 3(0) and θ 4(0) in the initial state.

Figure BDA0003105961320000041
Figure BDA0003105961320000041

步骤3：根据式(2)计算t时刻的二极管导通损耗P(t)：Step 3: Calculate the diode conduction loss P(t) at time t according to equation (2):

P(t)＝iF(t)uF(t) (2)P(t)=i F (t)u F (t) (2)

步骤4：使用0点开始24小时内的二极管导通损耗、散热器温度和整流柜外环境温度数据，根据式(3)，利用最小二乘法辨识得到当天24点时的辨识量θ1(d0)、θ2(d0)、θ3(d0)和θ4(d0)。Step 4: Using the diode conduction loss, radiator temperature and ambient temperature data outside the rectifier cabinet within 24 hours from 0:00, according to formula (3), use the least squares method to identify the identification value θ 1 (d0 ) at 24:00 of the day ) , θ 2(d0) , θ 3(d0) and θ 4(d0) .

Th(t)＝θ1(d0)Th(t-1)+θ2(d0)Th(t-2)+θ3(d0)P(t-1)+θ4(d0)Ta(t-1) (3)T h (t)=θ 1(d0) T h (t-1)+θ 2(d0) T h (t-2)+θ 3(d0) P(t-1)+θ 4(d0) T a (t-1) (3)

步骤5：计算24点时二极管热阻改变量系数g1(d0)和散热器热阻改变量系数gh(d0)。Step 5: Calculate the coefficient of change in diode thermal resistance g 1(d0) and the coefficient of change in heat sink thermal resistance g h(d0) at 24 points.

Figure BDA0003105961320000051
Figure BDA0003105961320000051

步骤6：计算24点时的热网络模型参数。Step 6: Calculate the thermal network model parameters at 24 points.

Figure BDA0003105961320000052
Figure BDA0003105961320000052

步骤7：计算当前二极管损伤值D(d0)。Step 7: Calculate the current diode damage value D (d0) .

Figure BDA0003105961320000053
Figure BDA0003105961320000053

步骤8：根据当天24点时的热网络模型参数计算采样日后一天的二极管结温。Step 8: Calculate the diode junction temperature one day after the sampling day according to the thermal network model parameters at 24:00 of the day.

Figure BDA0003105961320000054
Figure BDA0003105961320000054

步骤9：使用雨流计数法对二极管结温进行统计分析，把结温变化简化为若干个热载荷循环，提取单次热载荷中结温幅值波动的大小ΔTji，单次热载荷的结温平均值Tjmi和不同热载荷的加载次数ni，计算单次热载荷下对二极管造成的损伤di。Step 9: Use the rain flow counting method to perform statistical analysis on the diode junction temperature, simplify the junction temperature change into several thermal load cycles, extract the magnitude of the junction temperature amplitude fluctuation ΔT ji in a single thermal load, and the junction temperature of a single thermal load. The average temperature T jmi and the loading times ni of different thermal loads are used to calculate the damage d i caused to the diode under a single thermal load.

Figure BDA0003105961320000055
Figure BDA0003105961320000055

式中：参数A、α为通过试验测试数据的拟合得到的寿命模型参数，A＝97.2231，α＝3.1292，Ea为激发能量常数，Ea＝9.89×10-20J，kB为波尔兹曼常量，kB＝1.38×10-23J/K。In the formula: parameters A and α are the life model parameters obtained by fitting the test data, A=97.2231, α=3.1292, E a is the excitation energy constant, E a =9.89×10 -20 J, k B is the wave Ertzmann constant, k B =1.38×10 −23 J/K.

步骤10：计算采样日一天后的二极管损伤值D(d1)：Step 10: Calculate the diode damage value D (d1) one day after the sampling day:

Figure BDA0003105961320000056
Figure BDA0003105961320000056

其中：k为热载荷种类数。Where: k is the number of thermal load types.

步骤11：更新采样日一天后的二极管热阻值R1(d1)：Step 11: Update the diode thermal resistance value R 1(d1) one day after the sampling day:

R1(d1)＝R1(0)(1+a·D(d1)) (10)R 1(d1) =R 1(0) (1+a·D (d1) ) (10)

步骤12：计算采样日m天后的二极管损伤值，其中m为大于等于2的整数。Step 12: Calculate the damage value of the diode after m days of sampling days, where m is an integer greater than or equal to 2.

重复步骤8-9计算采样日m天后的二极管结温和单次热载荷下对二极管造成的损伤；Repeat steps 8-9 to calculate the diode junction temperature and damage to the diode under a single thermal load after m days of sampling days;

利用下式计算采样日m天后的二极管损伤值D(d1)和二极管热阻值R1(dm)。Use the following formula to calculate the diode damage value D (d1) and the diode thermal resistance value R 1(dm) after m days of sampling.

Figure BDA0003105961320000061
Figure BDA0003105961320000061

R1(dm)＝R1(0)(1+a·D(dm)) (12)R 1(dm) =R 1(0) (1+a·D (dm) ) (12)

当D(dm)首次大于等于1时，m即为二极管在采样日时的剩余寿命预测值。When D (dm) is greater than or equal to 1 for the first time, m is the predicted value of the remaining life of the diode on the sampling day.

进一步的，采样间隔Δt为0.1s。Further, the sampling interval Δt is 0.1s.

仿真实验：Simulation:

为验证本发明方法的有效性，进行以下仿真实验。In order to verify the effectiveness of the method of the present invention, the following simulation experiments are carried out.

利用PLECS软件建立如图1所示的地铁牵引整流器二极管二阶连续热网络模型。The second-order continuous thermal network model of the subway traction rectifier diode as shown in Figure 1 is established by using PLECS software.

以0.1s为采样间隔，采集从0点开始一天24小时内的地铁牵引变电所整流器二极管正向导通电流iF(t)，散热器温度Th(t)分别如图2和图3所示，假设整流柜外环境温度Ta(t)为恒定值25℃。With a sampling interval of 0.1s, the forward conduction current i F (t) of the rectifier diode of the subway traction substation within 24 hours a day from 0 is collected, and the radiator temperature Th (t) is shown in Figure 2 and Figure 3, respectively. It is assumed that the ambient temperature T a (t) outside the rectifier cabinet is a constant value of 25°C.

根据产品数据手册提供的瞬态热阻抗曲线，拟合得到获取初始状态下二极管热阻R1(0)＝0.1K/W，二极管热容C1(0)＝10J/K，散热器热阻Rh(0)＝0.2K/W，散热器热容Ch(0)＝20J/K。计算得到初始状态下的辨识量θ1(0)＝1.8489，θ2(0)＝-0.8511，θ3(0)＝4.2553×10-4，θ4(0)＝2.1277×10-3。According to the transient thermal impedance curve provided in the product data sheet, the diode thermal resistance R 1(0) = 0.1K/W, the diode thermal capacity C 1(0) = 10J/K, and the heat sink thermal resistance in the initial state are obtained by fitting. R h(0) =0.2K/W, and the heat sink heat capacity C h(0) =20J/K. The identification quantities θ 1(0) =1.8489, θ 2(0) =-0.8511, θ 3(0) =4.2553×10 -4 , θ 4(0) =2.1277×10 -3 in the initial state are obtained by calculation.

计算单个采样周期内的二极管导通损耗P(t)如图4所示。使用0点开始一天24小时内的二极管导通损耗、散热器温度和整流柜外环境温度数据，利用最小二乘法辨识得到当天24点时的辨识量θ1(d0)＝1.8532，θ2(d0)＝-0.8551、θ3(d0)＝4.0997×10-4，θ4(d0)＝1.9300×10-3。Calculating the diode conduction loss P(t) in a single sampling period is shown in Figure 4. Using the data of diode conduction loss, radiator temperature and ambient temperature outside the rectifier cabinet within 24 hours of the day starting from 0:00, the identification value at 24:00 of the day is obtained by the least square method identification θ 1(d0) = 1.8532, θ 2(d0 ) =-0.8551, θ 3(d0) =4.0997×10-4, θ 4(d0) =1.9300×10 -3 .

计算t时刻二极管热阻改变量系数g1(d0)＝1.1068，散热器热阻改变量系数gh(d0)＝1.1075.Calculate the coefficient of change in the thermal resistance of the diode at time t g 1(d0) = 1.1068, and the coefficient of change in the thermal resistance of the radiator g h(d0) = 1.1075.

计算t时刻的热网络模型参数R1(d0)＝0.11068K/W，二极管热容C1(d0)＝10J/K，散热器热阻Rh(d0)＝0.2215K/W，散热器热容Ch(d0)＝20J/K。Calculate the thermal network model parameters at time t R 1(d0) = 0.11068K/W, the diode heat capacity C 1(d0) = 10J/K, the heat sink thermal resistance R h(d0) = 0.2215K/W, the heat sink heat The capacity C h(d0) =20J/K.

计算当前二极管损伤值D(d0)＝0.534。Calculate the current diode damage value D (d0) = 0.534.

根据当天24点时的热网络模型参数计算采样日后一天的二极管结温如图5所示。Figure 5 shows the diode junction temperature calculated one day after the sampling day according to the thermal network model parameters at 24:00 of the day.

使用雨流计数法提取单次热载荷中结温幅值波动的大小ΔTji，单次热载荷的结温平均值Tjmi和不同热载荷的加载次数ni，计算采样日一天后的二极管损伤值D(d1)，更新采样日一天后的二极管热阻值R1(d1)，重复这一步骤，计算采样日m天(m＝2、3、4……)后的二极管损伤值D(dm)如图6所示，当m＝4249时，D(dm)首次大于等于1，即为二极管在采样日时的剩余寿命预测值为4249天。Use the rain flow counting method to extract the magnitude of the junction temperature amplitude fluctuation ΔT ji in a single thermal load, the average junction temperature T jmi of a single thermal load and the loading times ni of different thermal loads, and calculate the diode damage one day after the sampling day value D (d1) , update the diode thermal resistance value R 1(d1) one day after the sampling day, repeat this step, and calculate the diode damage value D ( dm) As shown in Figure 6, when m=4249, D (dm) is greater than or equal to 1 for the first time, which is the predicted value of the remaining life of the diode on the sampling day of 4249 days.

Claims (2)

1. A method for predicting the residual life of a diode of a subway traction rectifier in consideration of an aging process is characterized by comprising the following steps:
step 1: collecting forward conduction current i of a diode of a rectifier of a subway traction substation within 24 hours from a point 0 by taking delta t as a sampling intervalF(T) radiator temperature Th(T) and the ambient temperature T outside the rectifier cabineta(t)；
Step 2: obtaining the forward conduction current i of the diode according to a forward voltage-current characteristic curve provided by a diode product data manualF(t) corresponding forward conduction voltage uF(t); according to a transient thermal impedance curve provided by a diode product data manual, fitting to obtain the thermal resistance R of the diode in an initial state1(0)Diode heat capacity C1(0)Heat radiator thermal resistance Rh(0)Heat capacity of heat sink Ch(0)(ii) a Calculating and obtaining the identification quantity theta in the initial state according to the formula (1)1(0)、θ2(0)、θ3(0)And theta4(0)；
Figure FDA0003105961310000011
And step 3: the diode conduction loss p (t) at time t is calculated according to equation (2):
P(t)＝iF(t)uF(t) (2)
and 4, step 4: using the diode conduction loss, the radiator temperature and the environment temperature data outside the rectifier cabinet within 24 hours from the 0 point, and according to the formula (3), obtaining the identification quantity theta at the 24 points of the day by using least square method identification1(d0)、θ2(d0)、θ3(d0)And theta4(d0)；
Th(t)＝θ1(d0)Th(t-1)+θ2(d0)Th(t-2)+θ3(d0)P(t-1)+θ4(d0)Ta(t-1) (3)
And 5: calculating the coefficient g of the change of the thermal resistance of the diode at 24 points1(d0)And coefficient of variation of thermal resistance g of heat sinkh(d0)；
Figure FDA0003105961310000012
Step 6: calculating the thermal network model parameters at 24 points:
Figure FDA0003105961310000013
and 7: calculating the current diode damage value D(d0)：
Figure FDA0003105961310000021
And 8: calculating the junction temperature of the diode one day after the sampling day according to the heat network model parameters at the time of 24 o' clock of the day:
Figure FDA0003105961310000022
and step 9: using a rain flow counting method to carry out statistical analysis on the junction temperature of the diode, simplifying the junction temperature change into a plurality of heat load cycles, and extracting the temperature amplitude fluctuation delta T in a single heat loadjiMean value of junction temperature T of one-time thermal loadjmiAnd number of times n of loading of different thermal loadsiAnd calculating the damage d to the diode under the single thermal loadi：
Figure FDA0003105961310000023
In the formula: parameters A, alpha are the lifetimes obtained by fitting of experimental test dataModel parameters, a-97.2231, α -3.1292, EaTo excite an energy constant, Ea＝9.89×10-20J，kBIs Boltzmann constant, kB＝1.38×10-23J/K；
Step 10: calculating the diode damage value D one day after sampling(d1)：
Figure FDA0003105961310000024
Wherein: k is the number of hot load types;
step 11: updating the thermal resistance R of the diode one day after the sampling day1(d1)：
R1(d1)＝R1(0)(1+a·D(d1)) (10)
Step 12: calculating a diode damage value m days after sampling, wherein m is an integer more than or equal to 2;
repeating the steps 8-9 to calculate the junction temperature of the diode m days after sampling and the damage to the diode under single thermal load;
calculating the diode damage value D m days after sampling by using the following formula(dm)And diode thermal resistance value R1(dm)；
Figure FDA0003105961310000025
R1(dm)＝R1(0)(1+a·D(dm)) (12)
When D is present(dm)When the first time is more than or equal to 1, m is the predicted value of the residual service life of the diode on the sampling day.
2. A method for predicting the residual life of diodes of a subway traction rectifier according to claim 1, wherein said sampling interval Δ t is 0.1 s.
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