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CN112636756A - Low-leakage single-detection voltage-time converter based on bidirectional bootstrap control - Google Patents

Low-leakage single-detection voltage-time converter based on bidirectional bootstrap control Download PDF

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CN112636756A
CN112636756A CN202011429706.1A CN202011429706A CN112636756A CN 112636756 A CN112636756 A CN 112636756A CN 202011429706 A CN202011429706 A CN 202011429706A CN 112636756 A CN112636756 A CN 112636756A
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voltage
bootstrap
time converter
transistor
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CN112636756B (en
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吴建辉
王辉
智贺
李红
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Southeast University
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/34—Analogue value compared with reference values
    • H03M1/38—Analogue value compared with reference values sequentially only, e.g. successive approximation type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
    • G01R31/52—Testing for short-circuits, leakage current or ground faults
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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Abstract

本发明公开了一种基于双向自举控制的低泄漏单次检测电压时间转换器，该方法包括对于混合型SAR‑TDC结构中，经过SAR ADC粗转换得到的电压余量存储于电容阵列输出节点在进行TDC细转换前需连接在电压时间转换器上以得到时间差值。在粗转换阶段中，电压时间转换器处于空闲模式，其泄漏电流会影响电容阵列输出节点。同时如果电容阵列上的差分电压值相差很大时，其中一端就会触发电压时间转换器中的阈值检测器导致误操作。通过引入三态反相器作为阈值检测器有效降低误操作概率。在低电压低功耗应用下为使电压时间转换器对电容阵列的输出节点的影响最小化，本发明利用双向自举控制原理可以降低控制开关的泄露电流同时保证电压时间转换器的线性度。

Figure 202011429706

The invention discloses a low-leakage single-shot detection voltage-to-time converter based on bidirectional bootstrap control. The method includes, for a hybrid SAR-TDC structure, the voltage margin obtained by rough conversion of the SAR ADC is stored in an output node of a capacitor array Before performing TDC fine conversion, it needs to be connected to the voltage-time converter to obtain the time difference. During the coarse conversion phase, the voltage-to-time converter is in idle mode, and its leakage current affects the capacitor array output node. At the same time, if the differential voltage values on the capacitor array are very different, one end of the capacitor array will trigger the threshold detector in the voltage-to-time converter, resulting in misoperation. The probability of misoperation is effectively reduced by introducing a tri-state inverter as a threshold detector. In order to minimize the impact of the voltage-to-time converter on the output node of the capacitor array under low-voltage and low-power applications, the present invention utilizes the bidirectional bootstrap control principle to reduce the leakage current of the control switch while ensuring the linearity of the voltage-to-time converter.

Figure 202011429706

Description

Low-leakage single-detection voltage-time converter based on bidirectional bootstrap control
Technical Field
The invention relates to a low-leakage single-detection voltage-time converter (VTC) based on bidirectional bootstrap control, and belongs to the technical field of VTCs in a hybrid SAR-TDC structure.
Background
With the reduction of the process critical dimension, the digital circuit and the digital signal processing system are improved in the aspects of speed, power consumption, area and the like. The design of analog circuits presents a new trend to process signals in the time domain as process improvements. Moderate accuracy (8-12 bits), moderate sampling rate (<1MHz) sar adc is widely used in biomedical electronics, wearable devices, implantable devices, portable devices, and wireless sensor network nodes. The hybrid SAR-TDC structure fully utilizes the advantages of a digital circuit and is very suitable for the application occasions requiring low voltage and low power consumption. The power consumption in the hybrid SAR-TDC framework mainly comes from SARADC, VTC and TDC, the power consumption in the three mainly comes from two modules of SAR ADC and VTC, and the leakage current generated by the VTC module in the SAR conversion stage not only wastes the power consumption but also reduces the output voltage of the capacitor array to influence the circuit performance of the coarse conversion.
In the existing research, methods for reducing the static leakage current include using a high threshold transistor, using a transistor stack structure, or using a specific anti-leakage structure. The methods are mainly applied to improving the performance of the sampling switch, and can be well transferred to a control switch of the VTC to improve the performance of the VTC.
Disclosure of Invention
The technical problem is as follows: the invention aims to solve the technical problem of how to reduce the leakage current of a VTC in a mixed SAR-TDC structure as much as possible on the premise of ensuring the linearity of the VTC by aiming at the design of a low-power SARADC; the invention provides a low-leakage single-time VTC based on bidirectional bootstrap control, which ensures the linearity of the VTC and reduces the leakage current of the VTC by combining a bootstrap technology and a negative voltage technology.
The technical scheme is as follows: the low-leakage single-detection voltage-time converter based on the bidirectional bootstrap control solves the technical problems by adopting the following technical scheme:
the voltage-time converter is composed of a bidirectional bootstrap control generation module, a control switch, a current source and a tri-state inverter; the positive end input of the voltage-to-time converter is connected to the coarse conversion SARADC positive end capacitor array, and the negative end input of the voltage-to-time converter is connected to the coarse conversion SARADC negative end capacitor array; controlling the switch and the current source to perform a discharging operation for changing voltage values of the positive terminal input and the negative terminal input of the voltage-to-time converter; the signal TDC _ SIG _ BS generated by the bidirectional bootstrap control generation module acts on the gate of the control switch and the enable end enb of the tri-state inverter, and the signal TDC _ SIGB generated by the bidirectional bootstrap control generation module acts on the enable end en of the tri-state inverter; a tri-state inverter in the voltage-time converter is used as the output of the threshold detector completion time difference;
the working mode of the voltage-time converter is controlled by a VTC _ SIG signal; two modes are adopted: the method comprises the following steps of converting a mode and an idle mode:
the conversion mode specifically comprises the following steps:
the voltage margin obtained through the rough conversion is stored on a rough conversion SARADC capacitor array, the positive end capacitor array and the negative end capacitor array are respectively connected with the positive end input and the negative end input of a voltage-time converter, a control signal VTC _ SIG of a bidirectional bootstrap control generation module in the voltage-time converter in a conversion mode is a power supply VDD, a control signal VTC _ SIGB of a three-state inverter obtained through an inverter and the bidirectional bootstrap control generation module is a ground GND, a control signal VTC _ SIG _ BS shared by an enable end enb of the three-state inverter and a control switch grid is 2VDD, a first control switch and a second control switch are conducted, the enable end enb of the three-state inverter is conducted, the voltage-time converter outputs the GND, the positive end input and the negative end input of the voltage are discharged through a current source after the first control switch and the second control switch are conducted, and the voltage output of the voltage-time converter is output after the voltages of the positive end input and the negative end input of the voltage are lower than the, the conversion mode is completed.
The idle mode is as follows:
the voltage time converter enters a coarse conversion SARADC conversion mode in an idle mode, VTC _ SIG is GND in the idle mode, VTC _ SIGB obtained through the inverter and the bidirectional bootstrap control generation module is VDD, VTC _ SIG _ BS is | Vthp | -VDD, the first control switch and the second control switch are turned off, the tri-state inverter is in a high-resistance state, and the output of the voltage time converter keeps VDD; the probability of misoperation of the voltage-time converter by the voltage changed at the output end of the coarse conversion SARADC capacitor array can be effectively reduced by using the tri-state inverter.
In the low-voltage design, the continuously increased on-resistance of the control switch affects the precision of the voltage-time converter, the control switch needs to realize low leakage current in the turn-off stage so as to reduce static power consumption, and the bootstrap module and the negative voltage module are formed by the transistor and the capacitor to complete the function of bidirectional bootstrap.
The bidirectional bootstrap control generation module is divided into a forward bootstrap phase and a reverse bootstrap phase,
step A: forward bootstrapping phase
Firstly, analyzing the negative voltage generation module, when CLK is equal to GND, the seventh transistor is turned on, the upper plate of the capacitor C2 is connected to VDD through the seventh transistor, the ninth transistor is connected through a diode so that the voltage point V is connectedAThe voltage of the point is kept at the level of | Vthp |, and the sixth transistor is cut off, so that the bootstrap module and the negative voltage module do not interfere with each other; the second transistor and the fourth transistor in the bootstrap module are turned on, the lower plate of the capacitor C1 is connected to VDD through the second transistor, the upper plate of the capacitor C1 is bootstrapped to 2VDD for keeping the charge conservation of the capacitor C1, and the bootstrapped voltage is transmitted to the output node V through the fourth transistorBS；
And B: reverse bootstrapping phase
When CLK is equal to VDD, the eighth transistor is turned on, the upper plate of the capacitor C2 is pulled down to ground through the eighth transistor to keep the capacitor C2 charge conserved, and thus the voltage point V is maintainedAThe voltage at the point drops from | Vthp | to | Vthp | -VDD when the sixth transistor is turned on, and the negative voltage value is transmitted to the output node V through the sixth transistorBS(ii) a The first transistor in the bootstrap module is turned on, and the output node VBSThe grid electrode of the third transistor is connected, the third transistor is conducted, the upper and lower polar plates of the capacitor C1 are in a charging state by being respectively connected to VDD and GND, and the operation is ready for positive bootstrap; considering the fourth transistor and the ninth transistor type for node VAShadow ofHigh threshold transistors (pch-hvt) are used to maintain the stability of this negative voltage.
Has the advantages that: by adopting the technical scheme, the invention can produce the following technical effects:
1. the low-leakage single-time VTC based on the bidirectional bootstrap control provided by the invention adopts a negative voltage technology to obviously reduce the leakage current. The leakage current of the conventional control switch is substantially maintained at a level of tens of nA; the leakage current of the control switch is basically kept at the level of dozens of pAs, and the leakage current is reduced by two orders of magnitude after the bidirectional bootstrap control module is adopted.
2. The low-leakage single-detection VTC based on the bidirectional bootstrap control reduces the performance influence on the coarse conversion SARADC, mainly reflects the stability of the voltage on the capacitor array, and compared with the traditional control correlation, the voltage difference is 13.16mV, and is improved by 4.6%.
Drawings
FIG. 1 is a schematic diagram of the method of the present invention for implementing low leakage single-time VTC based on bidirectional bootstrap control.
Fig. 2 is a schematic diagram of a bidirectional bootstrap control generation module according to the method of the present invention.
FIG. 3 is a timing diagram of the low leakage single-test VTC based on bidirectional bootstrap control according to the method of the present invention.
FIG. 4 is a diagram showing a simulation result of a leakage current generated at the SAR conversion stage when the method of the present invention is applied to a 12-bit SAR-TDC.
FIG. 5 is a diagram showing simulation results of voltage variation at the output terminal of the capacitor array applied to 12-bit SAR-TDC.
Detailed Description
The low-leakage single-detection voltage-time converter based on the bidirectional bootstrap control is composed of a bidirectional bootstrap control generation module, a control switch, a current source and a tri-state inverter; a positive end input Vp of the voltage-to-time converter is connected to the coarse conversion sar adc positive end capacitor array, and a negative end input Vn is connected to the coarse conversion sar adc negative end capacitor array; controlling the switch and the current source to perform a discharging operation for changing voltage values of a positive terminal input Vp and a negative terminal input Vn of the voltage-time converter; the signal TDC _ SIG _ BS generated by the bidirectional bootstrap control generation module acts on the gate of the control switch and the enable end enb of the tri-state inverter, and the signal TDC _ SIGB generated by the bidirectional bootstrap control generation module acts on the enable end en of the tri-state inverter; a tri-state inverter in the voltage-time converter is used as the output of the threshold detector completion time difference;
the working mode of the voltage-time converter is controlled by a VTC _ SIG signal; two modes are adopted: the method comprises the following steps of converting a mode and an idle mode:
the conversion mode specifically comprises the following steps:
voltage allowance obtained through coarse conversion is stored in a coarse conversion SARADC capacitor array, a positive end capacitor array and a negative end capacitor array are respectively connected with a positive end input Vp and a negative end input Vn of a voltage-time converter, a control signal VTC _ SIG of a bidirectional bootstrap control generation module in the voltage-time converter in a conversion mode is a power supply VDD, a control signal VTC _ SIGB of the three-state inverter is ground GND obtained through the inverter and the bidirectional bootstrap control generation module, a control signal VTC _ SIG _ BS common to an enable end enb of the three-state inverter and a control switch grid is 2VDD, a first control switch M1 and a second control switch M2 are conducted, enable ends enb of three-state inverters I2 are all conducted, the voltage-time converter outputs GND, the positive end input and the negative end input of voltage are discharged through a current source ID after the positive end input and the negative end input of the voltage are conducted through the first control switch M1 and the second control switch M2, and when the voltage of the positive end input and the negative end input of the voltage-time converter is The converter outputs VDD and the conversion mode is complete.
The idle mode is as follows:
the voltage time converter enters a coarse conversion SARADC conversion mode in an idle mode, VTC _ SIG is GND in the idle mode, VTC _ SIGB obtained through the inverter and the bidirectional bootstrap control generation module is VDD, VTC _ SIG _ BS is | Vthp | -VDD, the first control switch M1 and the second control switch M2 are turned off, the tri-state inverter is in a high-impedance state, and the output of the voltage time converter is kept VDD; the probability of misoperation of the voltage-time converter by the voltage changed at the output end of the coarse conversion SARADC capacitor array can be effectively reduced by using the tri-state inverter.
In the low-voltage design, the continuously increased on-resistance of the control switch affects the precision of the voltage-time converter, the control switch needs to realize low leakage current in the turn-off stage so as to reduce static power consumption, and the bootstrap module and the negative voltage module are formed by the transistor and the capacitor to complete the function of bidirectional bootstrap.
The invention is further described below with reference to the accompanying drawings.
As shown in fig. 1, a low-leakage single-detection VTC based on bidirectional bootstrap control of the present invention includes input signals VP and VN, control signals VTC _ SIG and Vctrl, and output signals Tp and Tn.
The conversion mode has the following working principle that voltage allowance obtained through coarse conversion is stored in a capacitor array, P-end output and N-end output of the capacitor array are respectively connected to P-end input and N-end input of a VTC, VTC _ SIG is VDD in the conversion mode, VTC _ SIGB is GND obtained through an inverter and a bidirectional bootstrap control generation module, VTC _ SIG _ BS is 2VDD, control switches M1 and M2 are conducted, enabling ends of three-state inverters are conducted, the VTC outputs GND, P-end input and N-end input of the VTC are discharged through a current source ID after the control switches are conducted, and when voltage values of the P-end input and the N-end input of the VTC are lower than a conversion threshold value of the three-state inverters, the VTC outputs VDD.
After entering an idle mode, the VTC-SIG enters an SAR conversion mode, the working principle is as follows, VTC-SIG is GND in the idle mode, VTC-SIGB obtained through an inverter and a bidirectional bootstrap control generation module is VDD, VTC-SIG-BS is | Vthp | -VDD, a first control switch M1 and a second control switch M2 are turned off, a tri-state inverter is in a high-resistance state, and the VTC outputs and keeps VDD; the probability of misoperation of the variable voltage of the output end of the capacitor array on the VTC can be effectively reduced by using the tri-state inverter.
As shown in FIG. 2, in the bidirectional bootstrap control generation module of the present invention, the input signal is CLK and the output signal is VBSThe method is divided into a forward bootstrapping stage and a reverse bootstrapping stage, and the working principle analysis is as follows:
step A: forward bootstrapping phase
First, the negative voltage generating module is analyzed, when CLK is equal to GND, the seventh transistor Mbs7 is turned on, the upper plate of the capacitor C2 is connected to VDD through the seventh transistor Mbs7, the ninth transistor Mbs9 is diode-connected to keep the voltage of VA at | Vthp |, the sixth transistor Mbs6 is turned off to make the bootstrap module and the negative voltage module not interfere with each other, the second transistor Mbs2 and the fourth transistor Mbs4 in the bootstrap module are turned on, the lower plate of the capacitor C1 is connected to VDD through the second transistor Mbs2, the upper plate is bootstrapped to 2VDD to keep the charge of the capacitor C1 constant, and the voltage is transmitted to the output terminal through the fourth transistor Mbs 4.
And B: reverse bootstrapping phase
When CLK is VDD, the eighth transistor Mbs8 is turned on, the upper plate of the capacitor C2 is pulled down to ground through the eighth transistor Mbs8, the voltage at VA is lowered from | Vthp | to | Vthp | -VDD for keeping the capacitor C2 charge conserved, the sixth transistor Mbs6 is turned on, the negative voltage is transmitted to the output end through the sixth transistor Mbs6, the first transistor Mbs1 in the bootstrap module is turned on, the output end is connected to the gate of the third transistor Mbs3, the third transistor Mbs3 is turned on, the upper and lower plates of the capacitor C1 are in a charged state by being connected to VDD and ground, respectively, the operation is ready for forward bootstrap, and in order to better implement the circuit function, it should be noted that the transistor types of the fourth transistor Mbs4 and the ninth transistor Mbs9 are for the node VAThe effect of (3) is to maintain the stability of the negative voltage using high threshold transistors.
According to the low-leakage single-detection VTC based on the bidirectional bootstrap control, the negative voltage technology is adopted, so that the leakage current is remarkably reduced, and the output voltage of the capacitor array in the coarse conversion stage is stabilized. The operation principle of the simulation method is described in detail below with reference to specific circuits and simulation results.
Fig. 3 is a timing diagram of the low leakage single-time detection VTC based on bidirectional bootstrap control implemented by the present invention, and it is apparent from the diagram that the VTC is in the idle mode, even if the voltage on the capacitor array reaches the output signal of the flip voltage VTC of the tri-state inverter, the output signal can still remain unchanged, and the VTC will not be operated erroneously.
FIG. 4 is a simulation result diagram of the leakage current generated in the SAR conversion stage when the method of the present invention is applied to 12-bit SAR-TDC, and the leakage current of the conventional control switch is basically kept at 15 nA; the leakage current of the control switch is basically kept at the level of 60pA, and the leakage current is reduced by two orders of magnitude after the bidirectional bootstrap control module is adopted. Simulation results show that the bidirectional bootstrap control module can effectively reduce the leakage current of the control switch in the VTC.
Fig. 5 shows that the low-leakage single-detection VTC based on bidirectional bootstrap control provided by the present invention reduces the performance impact on the coarse-conversion SAR ADC, mainly reflecting the stability of the voltage on the capacitor array, and compared with the conventional control switch, the voltage difference is 13.16mV, which is improved by 4.6%.
The above description is only a preferred embodiment of the present invention, and the scope of the present invention is not limited to the above embodiment, but equivalent modifications or changes made by those skilled in the art according to the present disclosure should be included in the scope of the present invention as set forth in the appended claims.

Claims (5)

1.一种基于双向自举控制的低泄漏单次检测电压时间转换器，其特征在于，该电压时间转换器由双向自举控制产生模块、控制开关、电流源、三态反相器构成；所述电压时间转换器的正端输入（Vp）连接到粗转换SAR ADC正端电容阵列，负端输入（Vn）连接到粗转换SARADC负端电容阵列；控制开关和电流源进行放电操作用于改变电压时间转换器正端输入（Vp）和负端输入（Vn）的电压值；双向自举控制产生模块产生的信号TDC_SIG_BS作用于控制开关的栅极和三态反相器的使能端enb,双向自举控制产生模块产生的信号TDC_SIGB作用于三态反相器的使能端en；电压时间转换器中的三态反相器作为阈值检测器完成时间差的输出；1. a low-leakage single detection voltage-to-time converter based on bidirectional bootstrap control, is characterized in that, this voltage-to-time converter is made up of bidirectional bootstrap control generation module, control switch, current source, tri-state inverter; The positive terminal input (Vp) of the voltage-time converter is connected to the positive terminal capacitor array of the coarse conversion SAR ADC, and the negative terminal input (Vn) is connected to the negative terminal capacitor array of the coarse conversion SAR ADC; the control switch and the current source are used for discharging operation for Change the voltage value of the positive terminal input (Vp) and negative terminal input (Vn) of the voltage time converter; the signal TDC_SIG_BS generated by the bidirectional bootstrap control generation module acts on the gate of the control switch and the enable terminal enb of the tri-state inverter , the signal TDC_SIGB generated by the bidirectional bootstrap control generation module acts on the enabling terminal en of the tri-state inverter; the tri-state inverter in the voltage-time converter is used as the threshold detector to complete the output of the time difference; 电压时间转换器的工作模式通过VTC_SIG信号控制；分为两种模式：转换模式和空闲模式。The working mode of the voltage time converter is controlled by the VTC_SIG signal; it is divided into two modes: conversion mode and idle mode. 2.根据权利要求1所述的一种基于双向自举控制的低泄漏单次检测电压时间转换器，其特征在于，所述的转换模式具体为：2. a kind of low leakage single detection voltage time converter based on bidirectional bootstrap control according to claim 1, is characterized in that, described conversion mode is specifically: 经过粗转换得到的电压余量储存在粗转换SAR ADC电容阵列上，正端和负端电容阵列分别接入电压时间转换器的正端输入（Vp）和负端输入（Vn），转换模式下该电压时间转换器中双向自举控制产生模块的控制信号VTC_SIG为电源VDD，通过反相器和双向自举控制产生模块得到三态反相器的控制信号VTC_SIGB为地GND，三态反相器使能端enb和控制开关栅极共同的控制信号VTC_SIG_BS为2VDD，第一控制开关（M1）、第二控制开关（M2）导通，三态反相器（I2）的使能端（enb）均导通，电压时间转换器输出GND，电压的正端输入和负端输入在第一控制开关（M1）、第二控制开关（M2）导通后通过电流源（ID）进行放电，当电压时间转换器的正端输入（Vp）和负端输入（Vn）的电压低于三态反相器的转换阈值后电压时间转换器输出VDD，转换模式完成。The voltage margin obtained by the coarse conversion is stored on the coarse conversion SAR ADC capacitor array, and the positive terminal and negative terminal capacitor array are respectively connected to the positive terminal input (Vp) and negative terminal input (Vn) of the voltage-time converter. In the conversion mode The control signal VTC_SIG of the bidirectional bootstrap control generation module in the voltage-time converter is the power supply VDD, and the control signal VTC_SIGB of the tri-state inverter obtained through the inverter and the bidirectional bootstrap control generation module is the ground GND, and the tri-state inverter The common control signal VTC_SIG_BS of the enable terminal enb and the gate of the control switch is 2VDD, the first control switch (M1) and the second control switch (M2) are turned on, and the enable terminal (enb) of the tri-state inverter (I2) Both are turned on, the voltage-time converter outputs GND, and the positive and negative inputs of the voltage are discharged through the current source (ID) after the first control switch (M1) and the second control switch (M2) are turned on. When the voltage After the voltage of the positive terminal input (Vp) and the negative terminal input (Vn) of the time converter is lower than the conversion threshold of the tri-state inverter, the voltage time converter outputs VDD, and the conversion mode is completed. 3.根据权利要求1所述的一种基于双向自举控制的低泄漏单次检测电压时间转换器，其特征在于，所述的空闲模式为：3. a kind of low leakage single detection voltage time converter based on bidirectional bootstrap control according to claim 1, is characterized in that, described idle mode is: 电压时间转换器在空闲模式下进入粗转换SAR ADC转换模式，空闲模式下VTC_SIG为GND，通过反相器和双向自举控制产生模块得到VTC_SIGB为VDD，VTC_SIG_BS为|Vthp|-VDD，第一控制开关（M1）、第二控制开关（M2）关断，三态反相器处于高阻态，电压时间转换器输出保持VDD；利用三态反相器可以有效降低粗转换SAR ADC电容阵列输出端变化的电压对电压时间转换器的误操作概率。The voltage-time converter enters the coarse conversion SAR ADC conversion mode in idle mode. In idle mode, VTC_SIG is GND. Through the inverter and the bidirectional bootstrap control generation module, VTC_SIGB is VDD, and VTC_SIG_BS is |Vthp|-VDD. The first control The switch (M1) and the second control switch (M2) are turned off, the tri-state inverter is in a high-impedance state, and the output of the voltage-time converter maintains VDD; the tri-state inverter can effectively reduce the output of the coarse-conversion SAR ADC capacitor array Probability of misoperation of a varying voltage-to-voltage-time converter. 4.根据权利要求1所述的一种基于双向自举控制的低泄漏单次检测电压时间转换器，其特征在于，所述的双向自举控制产生模块，在低电压设计中，控制开关不断增大的导通电阻会影响电压时间转换器的精度，而控制开关在关断阶段需要实现低泄漏电流以降低静态功耗，通过晶体管和电容构成了自举模块与负电压模块，完成双向自举的功能。4. a kind of low leakage single detection voltage time converter based on bidirectional bootstrap control according to claim 1, it is characterized in that, described bidirectional bootstrap control generation module, in low voltage design, control switch continuously The increased on-resistance will affect the accuracy of the voltage-to-time converter, and the control switch needs to achieve low leakage current in the turn-off phase to reduce static power consumption. The bootstrap module and the negative voltage module are formed by transistors and capacitors to complete bidirectional self-regulation. lift function. 5.根据权利要求1所述的一种基于双向自举控制的低泄漏单次检测电压时间转换器，其特征在于，所述的双向自举控制产生模块分为正向自举阶段和反向自举阶段，5. a kind of low leakage single detection voltage time converter based on bidirectional bootstrap control according to claim 1, is characterized in that, described bidirectional bootstrap control generation module is divided into forward bootstrap stage and reverse direction Bootstrap stage, 步骤A：正向自举阶段Step A: Forward Bootstrap Phase 首先分析负电压产生模块，当CLK=GND时，第七晶体管（Mbs7）导通，电容C2的上极板通过第七晶体管（Mbs7）接到VDD，第九晶体管（Mbs9）通过二极管连接使得电压点VA点的电压保持在|Vthp|的水平，第六晶体管（Mbs6）截止使自举模块与负电压模块互不干扰；自举模块中第二晶体管（Mbs2）和第四晶体管（Mbs4）导通，电容C1下极板通过第二晶体管（Mbs2）接到VDD，为保持电容C1电荷守恒使得电容C1上极板自举到2VDD，并通过第四晶体管（Mbs4）传输到输出节点VBS；First analyze the negative voltage generation module, when CLK=GND, the seventh transistor (Mbs7) is turned on, the upper plate of the capacitor C2 is connected to VDD through the seventh transistor (Mbs7), and the ninth transistor (Mbs9) is connected through a diode to make the voltage The voltage at point VA is kept at the level of |Vthp|, and the sixth transistor (Mbs6) is turned off so that the bootstrap module and the negative voltage module do not interfere with each other; the second transistor (Mbs2) and the fourth transistor (Mbs4) in the bootstrap module Turn on, the lower plate of capacitor C1 is connected to VDD through the second transistor (Mbs2), in order to keep the charge of capacitor C1 conserved, the upper plate of capacitor C1 is bootstrapped to 2VDD, and transmitted to the output node V BS through the fourth transistor (Mbs4) ; 步骤B：反向自举阶段Step B: Reverse Bootstrap Phase 当CLK=VDD时，第八晶体管（Mbs8）导通，电容C2的上极板通过第八晶体管（Mbs8）下拉到地，为保持电容C2电荷守恒,因此电压点VA点的电压从|Vthp|下降为|Vthp|-VDD，此时第六晶体管（Mbs6）导通，该负电压值通过第六晶体管（Mbs6）传输到输出节点VBS；自举模块中第一晶体管（Mbs1）导通，输出节点VBS连接第三晶体管（Mbs3）栅极第三晶体管（Mbs3）导通，电容C1上下极板通过分别接到VDD和GND处于充电状态，该操作为正向自举做好准备工作；考虑第四晶体管（Mbs4）以及第九晶体管（Mbs9）晶体管类型对于节点VA的影响，采用高阈值晶体管(pch-hvt)来保持此负电压的稳定性。When CLK=VDD, the eighth transistor (Mbs8) is turned on, and the upper plate of the capacitor C2 is pulled down to the ground through the eighth transistor (Mbs8), in order to keep the charge of the capacitor C2 conserved, so the voltage of the voltage point V A is from |Vthp |drops to |Vthp|-VDD, at this time the sixth transistor (Mbs6) is turned on, and the negative voltage value is transmitted to the output node V BS through the sixth transistor (Mbs6); the first transistor (Mbs1 ) in the bootstrap module is turned on , the output node V BS is connected to the third transistor (Mbs3), the gate of the third transistor (Mbs3) is turned on, the upper and lower plates of the capacitor C1 are in a charging state by connecting to VDD and GND respectively, and this operation is ready for forward bootstrapping. ; Consider the effect of the transistor type of the fourth transistor (Mbs4) and the ninth transistor (Mbs9) on the node VA, and use a high-threshold transistor (pch-hvt) to maintain the stability of this negative voltage.
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