CN111977657A - Method for preparing silicon carbide nanowires by treating fly ash of coal-fired boiler by microwaves - Google Patents
Method for preparing silicon carbide nanowires by treating fly ash of coal-fired boiler by microwaves Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000002070 nanowire Substances 0.000 title claims abstract description 34
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 34
- 239000010881 fly ash Substances 0.000 title claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000003245 coal Substances 0.000 claims abstract description 14
- 239000000571 coke Substances 0.000 claims abstract description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 10
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- 238000002309 gasification Methods 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
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Abstract
Description
技术领域technical field
本发明涉及高端碳化硅材料和微波加热生产技术领域。The invention relates to the technical field of high-end silicon carbide material and microwave heating production.
背景技术Background technique
碳化硅(SiC)纳米线是一种径向上尺寸低于100nm,长度方向上远高于径向尺寸的单晶纤维。碳化硅纳米线耐高温、高频、高福射的特点,使其能够应用在一些极端苛刻环境中,对于军事、航天事业的发展具有重大意义。Silicon carbide (SiC) nanowires are single crystal fibers with a radial dimension below 100 nm and a length much larger than the radial dimension. The characteristics of high temperature, high frequency and high radiation resistance of silicon carbide nanowires enable them to be used in some extremely harsh environments, which is of great significance to the development of military and aerospace industries.
碳化硅纳米线生产技术一直都是全球研究的中心及难点。碳化硅纳米线在全球产量不高,一般为实验室水平生产(每次产量约几十微克)。目前合成碳化硅纳米线的方法按照碳源形态的不同,可分为三类:(1)气相碳源法,主要是利用化学气相沉积法(CVD)合成高纯度的碳化硅纳米线;(2)液相碳源法,主要是溶胶-凝胶法(Sol-Gel);(3)固相碳源法,主要包括模板法、碳热还原法、热解有机物前驱体法、电弧放电法等。这些方法存在对设备要求较高、工艺条件复杂、反应时间长、催化剂无法去除、难以大规模生产等问题中的某一种或某几种。Silicon carbide nanowire production technology has always been the center and difficulty of global research. The production of silicon carbide nanowires is not high in the world, and it is generally produced at the laboratory level (about tens of micrograms each time). At present, the methods for synthesizing SiC nanowires can be divided into three categories according to the different forms of carbon sources: (1) gas-phase carbon source method, which mainly uses chemical vapor deposition (CVD) to synthesize high-purity SiC nanowires; (2) ) liquid carbon source method, mainly sol-gel method (Sol-Gel); (3) solid phase carbon source method, mainly including template method, carbothermic reduction method, pyrolysis organic precursor method, arc discharge method, etc. . These methods have one or more of the problems of high equipment requirements, complex process conditions, long reaction time, inability to remove catalysts, and difficulty in large-scale production.
微波辐照技术除对设备要求低、工艺简单、加热均匀、加热速度快等优点外,还可以最大限度降低反应所需活化能、在极短时间内实现目标产物及新结构产物的合成。目前部分研究者研究了采用微波制备碳化硅纳米线,方法如下:In addition to the advantages of low equipment requirements, simple process, uniform heating, and fast heating speed, microwave irradiation technology can also minimize the activation energy required for the reaction and realize the synthesis of target products and new structural products in a very short time. At present, some researchers have studied the preparation of silicon carbide nanowires by microwave. The methods are as follows:
文献1专利CN102373505A《碳化硅纳米线的微波制备方法》公开了一种碳化硅纳米线的微波制备方法,其包括以下步骤:提供含硅基片,并将其置于微波反应腔中;将微波反应腔抽真空并通入保护性气体;用微波加热反应腔至1000~1300℃,向反应腔中通入碳源气体和保护性气体,使碳源气体反应,在含硅基片表面形成碳化硅纳米线。
文献2专利CN106544642A《一种利用微波法制备碳化硅纳米线薄膜的方法》公开了一种制备碳化硅纳米线薄膜的方法,包括以下步骤:将单质碳、单质硅以及二氧化硅充分混合后放入陶瓷坩埚中;将所述陶瓷坩埚与经过镍盐或铁盐溶液预处理陶瓷基板一起放入微波炉的谐振腔中,抽去部分空气,在低气压状态下(气压为10-30kPa)使用微波加热反应,快速加热至反应温度;保温一段时间后,关闭微波,自然冷却至室温,在所述陶瓷基板表面形成的即为碳化硅纳米线薄膜。
上述文献的制备方法不可避免的使用纯硅基片、纯硅等作为基材,含碳气体、单质碳等作为碳源,对原料品质要求高,制备成本高。本发明通过研究燃煤电厂飞灰和低品质碳质材料(活性炭、煤热解半焦、煤气化半焦、石油焦、生物质半焦和煤基焦炭)的组成,及其在微波处理中发生的变化机理,提出了一种利用微波处理燃煤锅炉飞灰制备碳化硅纳米线的方法。该方法以燃煤电厂飞灰和低品质碳质材料作为原料,原料易得、成本低,能实现固体废物飞灰的资源化利用。同时,该方法具有工艺、设备简单,产品产率较高,易大规模生产等优点,制备的碳化硅纳米线适合在高性能高温陶瓷的增强复合材料和半导体材料领域应用。The preparation methods of the above documents inevitably use pure silicon substrates, pure silicon, etc. as substrates, and carbon-containing gas, elemental carbon, etc. as carbon sources, which require high quality of raw materials and high preparation costs. The present invention studies the composition of fly ash from coal-fired power plants and low-quality carbonaceous materials (activated carbon, coal pyrolysis semi-coke, coal gasification semi-coke, petroleum coke, biomass semi-coke and coal-based coke), and its application in microwave treatment. According to the change mechanism, a method for preparing silicon carbide nanowires by microwave treatment of coal-fired boiler fly ash is proposed. The method uses fly ash from coal-fired power plants and low-quality carbonaceous materials as raw materials, the raw materials are readily available, and the cost is low, and the resource utilization of solid waste fly ash can be realized. At the same time, the method has the advantages of simple process and equipment, high product yield, easy mass production, etc. The prepared silicon carbide nanowires are suitable for application in the fields of high performance high temperature ceramic reinforced composite materials and semiconductor materials.
发明内容SUMMARY OF THE INVENTION
本发明的目的是提供一种利用微波处理燃煤锅炉飞灰制备碳化硅纳米线的方法,解决现有技术对设备要求较高、工艺条件复杂、反应时间长、催化剂无法去除、难以大规模生产等问题。The purpose of the present invention is to provide a method for preparing silicon carbide nanowires by microwave treatment of coal-fired boiler fly ash, which solves the problem that the prior art has higher requirements for equipment, complicated process conditions, long reaction time, inability to remove catalysts, and difficulty in large-scale production. And other issues.
为实现上述目的,本发明通过以下技术方案实现:To achieve the above object, the present invention is achieved through the following technical solutions:
首先将粒径<0.106μm燃煤锅炉飞灰与粒径<0.5mm的碳质材料按照质量比1:1~5:1 均匀混合,然后将该混合物装入石英反应器中,再将装有混合物的石英反应器放到微波加热装置内,在氮气保护下加热温度控制在800℃~1600℃,升温速率控制在20℃/min~50℃/min,在加热终温停留15min~100min,制备出碳化硅纳米线。Firstly, the fly ash of the coal-fired boiler with particle size < 0.106 μm and the carbonaceous material with particle size < 0.5 mm are uniformly mixed according to the mass ratio of 1:1 to 5:1, then the mixture is put into the quartz reactor, and then the The quartz reactor of the mixture is placed in a microwave heating device, and the heating temperature is controlled at 800 ℃ ~ 1600 ℃ under nitrogen protection, the heating rate is controlled at 20 ℃/min ~ 50 ℃ /min, and the final temperature of heating is kept for 15min ~ 100min, preparation silicon carbide nanowires.
所述的飞灰中二氧化硅的含量超过60%,残碳含量小于1%,挥发分含量小于1.5%。The content of silica in the fly ash is more than 60%, the content of residual carbon is less than 1%, and the content of volatile matter is less than 1.5%.
所述的碳质材料为活性炭、煤热解半焦、煤气化半焦、生物质半焦、石油焦、煤基焦炭的一种或任意几种的混合物。The carbonaceous material is activated carbon, coal pyrolysis semi-coke, coal gasification semi-coke, biomass semi-coke, petroleum coke, coal-based coke or a mixture of any of them.
所述的碳化硅纳米线直径为5nm~100nm,长度为100μm~1500μm。The silicon carbide nanowires have a diameter of 5 nm to 100 nm and a length of 100 μm to 1500 μm.
为实现上述目的,本发明通过以下技术步骤实现:For achieving the above object, the present invention realizes through the following technical steps:
(1)将粒径<0.106μm燃煤锅炉飞灰与粒径<0.5mm的碳质材料按照质量比1:1~5:1 均匀混合,然后将该混合物装入石英反应器中;(1) uniformly mix the particle size <0.106μm coal-fired boiler fly ash and the carbonaceous material with particle size <0.5mm according to the mass ratio of 1:1~5:1, and then load the mixture into the quartz reactor;
(2)将装有混合物的石英反应器放到微波加热装置旋转工作台上,在原料中插入热电偶,以监测物料床层的温度;(2) put the quartz reactor equipped with the mixture on the rotary table of the microwave heating device, and insert a thermocouple in the raw material to monitor the temperature of the material bed;
(3)向石英反应器内通入氮气,开启微波加热装置,将加热温度设定为800℃~1600℃,升温速率控制在20℃/min~50℃/min,在终温停留15min~100min。(3) Pour nitrogen into the quartz reactor, turn on the microwave heating device, set the heating temperature to 800℃~1600℃, control the heating rate at 20℃/min~50℃/min, and stay at the final temperature for 15min~100min .
(4)冷却,得到纯度为90%的碳化硅纳米线,直径为5nm~100nm,长度为100μm~1500μm。(4) cooling to obtain silicon carbide nanowires with a purity of 90%, a diameter of 5 nm to 100 nm, and a length of 100 μm to 1500 μm.
碳化硅纳米线制备采用微波处理的温度、加热时间、加热速率等工艺参数的设定和显示通过计算机完成。该微波装置单台每批次的处理量可以根据生产规模确定,由数公斤到数十公斤,每天的生产量可以在几十公斤到数百公斤;还可以通过增加微波装置数量,扩大碳化硅纳米线生产能力,使产量达到每年数百吨。所述的碳化硅纳米线适用于制备高性能高温陶瓷的增强复合材料,纯化后可以得到高纯碳化硅纳米线,可用于制备半导体材料。The preparation of silicon carbide nanowires adopts the setting and display of process parameters such as temperature, heating time and heating rate of microwave treatment through a computer. The processing capacity of each batch of the microwave device can be determined according to the production scale, ranging from several kilograms to tens of kilograms, and the daily production volume can be from tens of kilograms to hundreds of kilograms; it is also possible to increase the number of microwave devices to expand silicon carbide. Nanowire production capacity, enabling production to reach hundreds of tons per year. The silicon carbide nanowires are suitable for preparing reinforced composite materials of high-performance high-temperature ceramics, and high-purity silicon carbide nanowires can be obtained after purification, which can be used for preparing semiconductor materials.
与现有技术相比,本发明的有益效果是:Compared with the prior art, the beneficial effects of the present invention are:
(1)利用燃煤电厂飞灰作为原料,原料成本低,可以实现固体废弃物飞灰的资源化利用,符合国家政策要求;(1) Using fly ash from coal-fired power plants as raw materials, the cost of raw materials is low, and the resource utilization of solid waste fly ash can be realized, which meets the requirements of national policies;
(2)该技术可实现碳化硅纳米线大规模生产,生产周期短,副产品少,产率高;(2) This technology can realize large-scale production of silicon carbide nanowires, with short production cycle, few by-products, and high yield;
(3)对碳质原料的要求低,煤基半焦、生物质半焦、石油焦、煤基焦炭等均可以使用;(3) Low requirements for carbonaceous raw materials, coal-based semi-coke, biomass semi-coke, petroleum coke, coal-based coke, etc. can be used;
(4)生产设备和工艺简单,容易操作,加热条件要求不苛刻,投资成本低;(4) The production equipment and process are simple, easy to operate, the heating conditions are not demanding, and the investment cost is low;
(5)生产的碳化硅纳米线产品可以用于生产高温陶瓷增强复合材料,纯化处理后可用于制备半导体材料。(5) The produced silicon carbide nanowire products can be used to produce high temperature ceramic reinforced composite materials, and can be used to prepare semiconductor materials after purification treatment.
附图说明Description of drawings
图1是碳化硅纳米线制备工艺流程图。FIG. 1 is a flow chart of the fabrication process of silicon carbide nanowires.
图2是碳化硅纳米线的微波生产装置;其中1)热电偶;2)微波炉腔体;3)石英反应器;4)反应物料;5)耐火保温砖;6)微波炉旋转工作台;7)计算机;8)微波炉显示器;9)微波炉磁控管单元;10)微波炉电源控制单元。Figure 2 is a microwave production device for silicon carbide nanowires; wherein 1) thermocouple; 2) microwave oven cavity; 3) quartz reactor; 4) reaction material; 5) refractory insulation brick; 6) microwave oven rotary table; 7) Computer; 8) Microwave oven display; 9) Microwave oven magnetron unit; 10) Microwave oven power supply control unit.
图3是碳化硅纳米线电镜图;其中(a)扫描电镜下碳化硅纳米线的形貌;(b)透射电镜下碳化硅纳米线的结构形态。3 is an electron microscope image of silicon carbide nanowires; wherein (a) the morphology of the silicon carbide nanowires under a scanning electron microscope; (b) the structural morphology of the silicon carbide nanowires under a transmission electron microscope.
具体实施方式Detailed ways
一种利用微波处理燃煤锅炉飞灰制备碳化硅纳米线的新方法,采用以下实施案例举例说明了本发明的具体实施方式和实施效果。A new method for preparing silicon carbide nanowires by microwave treatment of fly ash of coal-fired boilers, the following examples are used to illustrate the specific embodiments and implementation effects of the present invention.
具体实施例:Specific examples:
将10g粒径<0.106μm某燃煤电厂飞灰和5g粒径<0.5mm煤的热解半焦均匀混合,然后将该混合物装入石英反应器中,再将装有混合物的石英反应器放到微波炉(结构示意图见图2)内,在氮气保护下加热温度控制在1200℃,升温速率控制在20℃/min,在1200℃停留60min,制备出碳化硅纳米线,工艺流程图见图1。Mix 10g of fly ash from a coal-fired power plant with a particle size of less than 0.106 μm and 5g of pyrolysis semi-coke with a particle size of less than 0.5mm, then put the mixture into a quartz reactor, and then put the mixture into the quartz reactor. In the microwave oven (see Figure 2 for the schematic diagram of the structure), the heating temperature is controlled at 1200 °C under nitrogen protection, the heating rate is controlled at 20 °C/min, and the temperature is kept at 1200 °C for 60 minutes to prepare silicon carbide nanowires. The process flow chart is shown in Figure 1 .
制备的碳化硅纳米线采用电镜观察,其形貌和结构如图3所示。从图3(a)可以看出,碳化硅纳米线直径为5~50nm,长度达到1000μm,产率很高,可用于制备高性能高温陶瓷的增强复合材料。脱除碳化硅纳米线中的氧化铁、氧化铝等杂质(飞灰和碳质材料自身含有的杂质),得到高纯碳化硅纳米线,可用于制备高端碳化硅功能材料。The prepared silicon carbide nanowires were observed by electron microscope, and their morphology and structure are shown in Figure 3. It can be seen from Figure 3(a) that the silicon carbide nanowires have a diameter of 5-50 nm and a length of 1000 μm, with a high yield, which can be used to prepare reinforced composites for high-performance high-temperature ceramics. Impurities such as iron oxide and aluminum oxide (the impurities contained in fly ash and carbonaceous materials themselves) in the silicon carbide nanowires are removed to obtain high-purity silicon carbide nanowires, which can be used to prepare high-end silicon carbide functional materials.
本领域的技术人员容易理解,以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。Those skilled in the art can easily understand that the above are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention, etc., All should be included within the protection scope of the present invention.
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