CN111876749A - Method for improving thickness difference of silicon wafer film in furnace tube process - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 65
- 230000008569 process Effects 0.000 title claims abstract description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 27
- 239000010703 silicon Substances 0.000 title claims abstract description 27
- 239000002243 precursor Substances 0.000 claims abstract description 65
- 239000012071 phase Substances 0.000 claims abstract description 54
- 238000010926 purge Methods 0.000 claims abstract description 20
- 239000012808 vapor phase Substances 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 45
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- 238000000231 atomic layer deposition Methods 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 238000001179 sorption measurement Methods 0.000 claims description 5
- 125000004122 cyclic group Chemical group 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 abstract description 24
- 230000008021 deposition Effects 0.000 abstract description 7
- 239000010408 film Substances 0.000 description 39
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 23
- 238000006243 chemical reaction Methods 0.000 description 10
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 8
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 230000006872 improvement Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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Abstract
The invention discloses a method for improving the thickness difference of silicon wafer films in a furnace tube process, which comprises the following steps in each cycle process: step S1, introducing a first gas phase precursor; step S2, purging redundant first gas phase precursor; step S3, introducing a second gas-phase precursor for the first time; step S4, introducing a second gas-phase precursor for the second time; step S5, purging the redundant second gas-phase precursor; wherein the volume V of the second vapor phase precursor required during each cycle0The flow rate of the first-time introduced second gas-phase precursor is S1The introduction time is T1And the flow rate of the second gas-phase precursor introduced for the second time is S2The introduction time is T2In relation to (2)Comprises the following steps: v0＝S1×T1+S2×T2；S1＞S2. On the premise of ensuring that the thickness of the film deposited in each circulation process is not changed, the concentration difference of precursor residual gas in the furnace tube is effectively reduced, the film thickness difference caused by the deposition of silicon wafer residual gas at different positions in the furnace tube is reduced, and the thickness difference among silicon wafers is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a method for improving thickness difference of a silicon wafer film in a furnace tube process.
Background
In the process of growing the thin film by using the furnace process, the control of the thin film growth step is controlled by time without exception. When the set growth time is reached, correspondingly, the input of the reaction gases is stopped, and the flow rates of the relevant reaction gases are all reset to zero from the set values.
For example, silicon nitride (Si)3N4) The film has the excellent characteristics of strong blocking capability to mobile ions (Na +), compact structure, small pinhole density, hydrophobicity, good chemical stability, large dielectric constant and the like, is a film material widely applied to the fields of semiconductors, microelectronics and MEMS, and is widely applied to passivation, isolation, capacitance media, structural materials and the like. Wherein, silicon nitride (Si)3N4) The thin film has a high dielectric constant, and thus is widely used as a dielectric material in the field of semiconductor manufacturing, for example, in the process of manufacturing a flash memory, an ONO layer, i.e., a silicon oxide layer-silicon nitride layer-silicon oxide layer (SiO), is required as a dielectric material between a Floating Gate (Floating Gate) and a Control Gate (Control Gate)2-Si3N4-SiO2)。
Si3N4The thin film may be prepared by Physical Vapor Deposition (PVD), Ion Beam Enhanced Deposition (IBED), Chemical Vapor Deposition (CVD), and Atomic Layer Deposition (ALD). Taking the Atomic Layer Deposition (ALD) silicon nitride film process as an example, DCS (dichlorosilane) gas and ammonia (NH) gas are utilized3) The chemical reaction formula of the film is as follows:
3SiH2Cl2+7NH3→Si3N4+3NH4Cl+3HCl+6H2(ii) a Or
3SiH2Cl2+4NH3→Si3N4+6HCl+6H2
The deposition process of the silicon nitride film specifically comprises the following steps: step 1, introducing a reaction source DCS (dichlorosilane) gas for carrying out first physical adsorption; step 2, using N2Purging excess DCS gas (nitrogen); step 3, NH3(ammonia gas) is subjected to plasma dissociation and then is subjected to chemical reaction with DCS adsorbed on the surface of the silicon wafer to generate a film;and 4, purging redundant ammonia gas by using nitrogen.
Generally, the process of step 1 to step 4 is defined as one cycle, and the thickness of the thin film is determined according to the specific number of cycles. During this cycle, the difference in thickness uniformity among wafers is mainly determined by the difference in the residual gas concentration of ammonia gas in step 3. Specifically, for example, in the conventional process, the flow rate of ammonia gas is set to 5 liters/minute, and the gas is introduced for about 20 seconds per cycle.
However, because the furnace tube has a large volume and the position of the gas outlet is inevitably asymmetric, the residual gas of the reaction gas source has a certain difference at each position of the furnace tube. For silicon wafers at different positions in the furnace tube, the residual gas reacts to generate a thin film, so that the silicon wafers at different positions have different characterization parameters such as inter-wafer thickness uniformity and intra-wafer thickness uniformity due to different concentrations of the residual gas, and the quality of the thin film is influenced. This phenomenon is particularly evident in furnace tube processes where thermal reactions are dominant.
Disclosure of Invention
The invention aims to solve the technical problem of providing a method for improving the thickness difference of silicon wafer films in a furnace tube process, which can solve the problem of large thickness difference of silicon wafers at different positions of a furnace tube in the prior art.
In order to solve the above problems, the method for improving the thickness difference of the silicon wafer film in the furnace tube process provided by the invention comprises the following steps:
step S1, introducing a first gas phase precursor for physical adsorption;
step S2, utilizing the purge gas to purge the redundant first gas phase precursor;
step S3, a second gas-phase precursor is introduced for the first time, wherein the flow rate of the second gas-phase precursor is S1The introduction time is T1；
Step S4, second-time introduction of a second gas-phase precursor with the flow rate S2Disclosure of the inventionThe entry time is T2；
Step S5, purging the redundant second gas-phase precursor by using a purge gas;
wherein the volume V of the second vapor phase precursor required during each cycle0The flow rate of the first-time introduced second gas-phase precursor is S1The introduction time is T1And the flow rate of the second gas-phase precursor introduced for the second time is S2The introduction time is T2The relationship of (1) is:
V0＝S1×T1+S2×T2
S1＞S2。
further, the purge gas is nitrogen or an inert gas.
Further, the flow S of the first-time introduced second gas-phase precursor1The flow rate of the second gas phase precursor introduced for the second time is S2The ratio of (A) to (B) is 5: 1-10: 1.
Further, in steps S3 and S4, the second vapor phase precursor and the first vapor phase precursor are chemically reacted.
Further, the method is used for forming derivative films such as a silicon nitride film, a silicon oxide film, a silicon oxynitride film and the like.
Further, the furnace tube process comprises a normal-pressure furnace tube process, a low-pressure furnace tube process and an atomic layer deposition process.
Compared with the process of continuously introducing the second gas-phase precursor at the set flow rate for the set time to complete the film deposition in the prior art, the method has the advantages that the step of depositing the film is split, specifically, the introduction of the second gas-phase precursor is divided into two steps, the first step keeps the set flow rate in the prior art and continuously inputs the second gas-phase precursor for a period of time (less than the set time in the prior art), then the second step reduces the input flow rate of the second gas-phase precursor, and the input time of the second gas-phase precursor in the second step is determined according to the reduced flow rate according to the principle that the product of the flow rate and the time of the second gas-phase precursor participating in the chemical reaction in each cycle. According to the invention, on the premise of ensuring that the thickness of the film deposited in each circulation process is not changed, the input control mode of the second gas-phase precursor is changed, so that the concentration difference of the precursor residual gas in the furnace tube is effectively reduced, the film thickness difference caused by the deposition of the silicon wafer residual gas at different positions in the furnace tube is reduced, and the thickness difference among the silicon wafers is improved.
Drawings
FIG. 1 is a flowchart of a method for improving the thickness difference of silicon wafer films in a furnace process according to the present invention.
Detailed Description
Other advantages and effects of the present invention will become readily apparent to those skilled in the art from the following detailed description, wherein it is shown in the accompanying drawings, wherein the specific embodiments are by way of illustration. In the following description, specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced or applied in different embodiments, and the details may be based on different viewpoints and applications, and may be widely spread and replaced by those skilled in the art without departing from the spirit of the present invention.
Example one
In the method for improving the thickness difference of the silicon wafer film in the furnace tube process provided by the embodiment of the invention, as shown in fig. 1, the growth of the film comprises a plurality of cyclic processes, and each cyclic process comprises the following steps:
step S1, introducing a first gas phase precursor for physical adsorption;
step S2, utilizing the purge gas to purge the redundant first gas phase precursor;
step S3, a second gas-phase precursor is introduced for the first time, wherein the flow rate of the second gas-phase precursor is S1The introduction time is T1；
Step S4, second-time introduction of a second gas-phase precursor with the flow rate S2The introduction time is T2；
Step S5, purging the redundant second gas-phase precursor by using a purge gas;
wherein the volume V of the second vapor phase precursor required during each cycle0The flow rate of the first-time introduced second gas-phase precursor is S1The introduction time is T1And the flow rate of the second gas-phase precursor introduced for the second time is S2The introduction time is T2The relationship of (1) is:
V0＝S1×T1+S2×T2
S1＞S2。
the method provided by the embodiment of the invention can be used for generating derivative films such as a silicon nitride film, a silicon oxide film, a silicon oxynitride film and the like.
The furnace tube process comprises an atmospheric pressure furnace tube process, a low pressure furnace tube process and an Atomic Layer Deposition (ALD) process.
In the existing furnace tube process, the second gas phase precursor is used at a set flow S1Continuously inputting set time T0And V is0＝S1×T0And stopping inputting the second gas-phase precursor when the set time is reached. However, at each position of the furnace tube, the residual gas has a certain concentration difference, and the residual gas reacts to cause the difference of the film thickness of the silicon wafer among different positions, which affects the quality of the film.
Compared with the prior art, the embodiment splits the step of depositing the thin film, specifically, the step of introducing the second gas-phase precursor is divided into two steps, the first step maintains the set flow rate in the prior art and continuously inputs the second gas-phase precursor for a period of time (less than the set time in the prior art), then the second step reduces the input flow rate of the second gas-phase precursor, and the input time of the second gas-phase precursor in the second step is determined according to the reduced flow rate according to the principle that the product of the flow rate and the time of the second gas-phase precursor participating in the chemical reaction in each circulation process is kept unchanged.
The embodiment of the invention ensures that the thickness of the film deposited in each circulation process is not changed (V)0＝S1×T0＝S1×T1+S2×T2) Then, the input control mode of the second gas phase precursor is changed(the large flow input is firstly kept and then the small flow input is changed), thereby effectively reducing the concentration difference of precursor residual gas in the furnace tube, reducing the film thickness difference caused by the deposition of silicon wafer residual gas at different positions in the furnace tube and improving the thickness difference among silicon wafers.
Example two
On the basis of the first embodiment, the present embodiment further defines the method for improving the thickness difference of the silicon wafer film in the furnace process in detail.
Wherein the ratio of the flow rate S1 of the first introduced second gas-phase precursor to the flow rate S2 of the second introduced second gas-phase precursor is 5: 1-10: 1.
In steps S2 and S5, the purge gas is nitrogen or an inert gas.
In steps S3 and S4, the second vapor phase precursor and the first vapor phase precursor are chemically reacted to form a thin film.
The following description will take an example of the Atomic Layer Deposition (ALD) process for forming a silicon nitride thin film.
The thickness of the film is determined by the number of specific cycles. Currently, each cycle of deposition includes: 1) introducing DCS (dichlorosilane) gas for carrying out first physical adsorption; 2) purging redundant DCS gas source by using nitrogen N2; 3) introducing ammonia (NH3), and carrying out chemical reaction on the ammonia and DCS adsorbed on the surface of the silicon wafer after plasma dissociation to generate a silicon nitride film; 4) excess ammonia was purged with nitrogen. In each cycle, the film thickness uniformity among the wafers is mainly determined by the difference in the residual gas concentration of ammonia gas after the chemical reaction in the third step. In the prior art, the flow rate of ammonia gas is usually set to 5 liters per minute, the gas introduction time is 20 seconds per cycle, and the specific control parameters in each step are shown in table 1.
TABLE 1 control parameters for the various steps of the prior art
In this embodiment, the control parameters of the ammonia gas introduction process are not kept unchanged, the introduction flow rate is kept unchanged at first at 5 liters per minute, the introduction time is set at 18 seconds, then the flow rate is changed to 1 liter per minute, and the introduction time is 10 seconds, and the control parameters in each step are shown in table 2, so that the product of the flow rate and the time of the ammonia gas can be ensured to be constant (the volume of the ammonia gas is the same as that of the ammonia gas input in the prior art), and the thickness of the film deposited in each cycle process is ensured to be unchanged.
TABLE 2 control parameters of the steps of this example
However, in this embodiment, the input of the ammonia gas is not directly changed from the set flow rate (5 liters per minute) to zero, but is changed from the set flow rate (5 liters per minute) to 1 liter per minute and then to zero, so that the difference of the ammonia gas concentration and the residual gas in the furnace tube can be effectively reduced, the film thickness difference of the silicon wafers at different positions due to residual gas deposition is reduced, and the thickness difference between the wafers is improved. Using 75 angstroms of film as an example, the film growth was performed by the methods of the prior art and the present example, and the difference in film thickness is shown in Table 3.
TABLE 3 film thickness differences before and after improvement
| Difference in thickness in furnace | |
| Before improvement | 3 angstroms (A) |
| After improvement | <1 angstrom |
The present invention has been described in detail with reference to the specific embodiments, which are merely preferred embodiments of the present invention, and the present invention is not limited to the above embodiments. Equivalent alterations and modifications made by those skilled in the art without departing from the principle of the invention should be considered to be within the technical scope of the invention.
Claims (6)
1. A method for improving the thickness difference of a silicon wafer film in a furnace tube process is disclosed, the growth of the film comprises a plurality of cyclic processes, and the method is characterized in that the steps of each cyclic process are as follows:
step S1, introducing a first gas phase precursor for physical adsorption;
step S2, utilizing the purge gas to purge the redundant first gas phase precursor;
step S3, a second gas-phase precursor is introduced for the first time, wherein the flow rate of the second gas-phase precursor is S1The introduction time is T1；
Step S4, second-time introduction of a second gas-phase precursor with the flow rate S2The introduction time is T2；
Step S5, purging the redundant second gas-phase precursor by using a purge gas;
wherein the volume V of the second vapor phase precursor required during each cycle0The flow rate of the first-time introduced second gas-phase precursor is S1The introduction time is T1And the flow rate of the second gas-phase precursor introduced for the second time is S2The introduction time is T2The relationship of (1) is:
V0＝S1×T1+S2×T2
S1＞S2。
2. the apparatus of claim 1The method for silicon wafer film thickness difference in the Shanxi tube process is characterized in that the flow S of the first-time introduced second gas-phase precursor1The flow rate of the second gas phase precursor introduced for the second time is S2The ratio of (A) to (B) is 5: 1-10: 1.
3. The method of claim 1, wherein the purge gas is nitrogen or an inert gas.
4. The method of claim 1, wherein the second gas phase precursor and the first gas phase precursor are chemically reacted in steps S3 and S4.
5. The method of claim 1, wherein the method is used for forming a silicon nitride film, a silicon oxide film and a silicon oxynitride film.
6. The method of claim 1, wherein the furnace process comprises an atmospheric furnace process, a low pressure furnace process, and an atomic layer deposition process.
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| US20050026434A1 (en) * | 2003-07-31 | 2005-02-03 | Katja Huy | Method of improving the wafer-to-wafer thickness uniformity of silicon nitride layers |
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