CN111739885A - Electromagnetic shielding structure, manufacturing method of electromagnetic shielding structure, and electronic product - Google Patents
Electromagnetic shielding structure, manufacturing method of electromagnetic shielding structure, and electronic product Download PDFInfo
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Abstract
本发明的实施例提供了一种电磁屏蔽结构、电磁屏蔽结构制作方法和电子产品，涉及半导体技术领域。本发明实施例所提供电磁屏蔽结构、电磁屏蔽结构制作方法和电子产品，通过在基板上形成槽状屏蔽结构，并将槽状屏蔽结构贯穿于塑封体以及基板，使得设置于塑封体远离基板一侧的屏蔽层可通过槽状屏蔽结构与接地端电性连接，从而使得槽状屏蔽结构在至少两个芯片之间形成电磁屏蔽，工艺简单，电磁屏蔽效果好，且无需在基板塑封后，通过激光开槽填充屏蔽胶形成电磁屏蔽，因此，可以有效避免因为开槽深度不稳定，导致的屏蔽胶填充不完全，影响电磁屏蔽性能的问题。
Embodiments of the present invention provide an electromagnetic shielding structure, a method for manufacturing the electromagnetic shielding structure, and an electronic product, and relate to the technical field of semiconductors. The electromagnetic shielding structure, the method for manufacturing the electromagnetic shielding structure, and the electronic product provided by the embodiments of the present invention are formed by forming a groove-shaped shielding structure on the substrate, and penetrating the groove-shaped shielding structure through the plastic sealing body and the substrate, so that the groove-shaped shielding structure is disposed on the plastic sealing body away from the substrate. The shielding layer on the side can be electrically connected to the ground terminal through the groove-shaped shielding structure, so that the groove-shaped shielding structure forms electromagnetic shielding between at least two chips, the process is simple, and the electromagnetic shielding effect is good, and there is no need to pass Laser slotting and filling with shielding glue form electromagnetic shielding. Therefore, it can effectively avoid the problem of incomplete filling of shielding glue due to unstable slot depth, which affects the electromagnetic shielding performance.
Description
技术领域technical field
本发明涉及半导体技术领域，具体而言，涉及一种电磁屏蔽结构、电磁屏蔽结构制作方法和电子产品。The present invention relates to the technical field of semiconductors, and in particular, to an electromagnetic shielding structure, a method for making the electromagnetic shielding structure, and an electronic product.
背景技术Background technique
随着电子产品越来越多地运用于通信高频信号领域，越来越需要电子产品具备电磁屏蔽结构，以防止各种芯片和元器件之间产生的电磁干扰。其中，单一的金属化屏蔽技术只能解决模块与模块之间的电磁干扰问题，无法满足模块内部芯片相互之间的电磁干扰问题，所以需要采用分区屏蔽技术。As electronic products are increasingly used in the field of high-frequency communication signals, it is increasingly necessary for electronic products to have an electromagnetic shielding structure to prevent electromagnetic interference between various chips and components. Among them, a single metallization shielding technology can only solve the problem of electromagnetic interference between modules, but cannot meet the problem of electromagnetic interference between chips inside the module, so it is necessary to use partitioned shielding technology.
现有系统级封装（System In Package，SIP）模组电磁屏蔽分区技术，主要是在产品完成封装后，利用激光在塑封体表面进行开槽，并填充屏蔽胶，从而达到电磁屏蔽分区。由于基板在塑封后，存在翘曲，因此激光开槽时会存在开槽深度不稳定的问题，导致屏蔽胶填充不完全，从而影响其电磁屏蔽性能。The existing system-in-package (SIP) module electromagnetic shielding and partitioning technology mainly uses laser to make grooves on the surface of the plastic package after the product is packaged, and fill the shielding glue to achieve electromagnetic shielding partitioning. Since the substrate is warped after plastic sealing, the groove depth is unstable during laser grooving, resulting in incomplete filling of the shielding glue, thereby affecting its electromagnetic shielding performance.
发明内容SUMMARY OF THE INVENTION
基于上述研究，本发明提供了一种电磁屏蔽结构、电磁屏蔽结构制作方法和电子产品，以改善上述问题。Based on the above research, the present invention provides an electromagnetic shielding structure, a manufacturing method of the electromagnetic shielding structure and an electronic product to improve the above problems.
本发明的实施例可以这样实现：Embodiments of the present invention can be implemented as follows:
第一方面，本发明实施例提供一种电磁屏蔽结构，包括:A first aspect, an embodiment of the present invention provides a kind of electromagnetic shielding structure, comprising:
基板；substrate;
形成于所述基板上并沿垂直所述基板的方向延伸的槽状屏蔽结构；a slot-shaped shielding structure formed on the substrate and extending in a direction perpendicular to the substrate;
设置于所述槽状屏蔽结构两侧的至少两个芯片；at least two chips disposed on both sides of the slot-shaped shielding structure;
覆盖于所述至少两个芯片上的塑封体；a plastic package covering the at least two chips;
设置于所述塑封体远离所述基板一侧、且包围所述塑封体周侧的屏蔽层；a shielding layer disposed on the side of the plastic packaging body away from the substrate and surrounding the peripheral side of the plastic packaging body;
所述槽状屏蔽结构贯穿于所述塑封体以及所述基板，所述屏蔽层通过所述槽状屏蔽结构与接地端电性连接，以使所述槽状屏蔽结构在所述至少两个芯片之间形成电磁屏蔽。The slot-shaped shielding structure penetrates through the plastic package and the substrate, and the shielding layer is electrically connected to the ground terminal through the slot-shaped shielding structure, so that the slot-shaped shielding structure is connected to the at least two chips. Electromagnetic shielding is formed between them.
在可选的实施方式中，所述芯片的接地参考点通过打线与所述槽状屏蔽结构电性连接，以通过所述槽状屏蔽结构与所述接地端连接。In an optional implementation manner, the ground reference point of the chip is electrically connected to the slot-shaped shielding structure through bonding wires, so as to be connected to the ground terminal through the slot-shaped shielding structure.
在可选的实施方式中，所述电磁屏蔽结构还包括至少一个接地点，所述接地点设置于所述槽状屏蔽结构朝向所述芯片的一侧，并与所述槽状屏蔽结构电性连接；In an optional implementation manner, the electromagnetic shielding structure further includes at least one grounding point, the grounding point is disposed on a side of the slot-shaped shielding structure facing the chip, and is electrically connected to the slot-shaped shielding structure connect;
所述芯片的接地参考点通过打线与所述接地点电性连接，以通过所述接地点与所述槽状屏蔽结构电性连接，并通过所述槽状屏蔽结构与所述接地端连接。The ground reference point of the chip is electrically connected to the ground point through a wire, so as to be electrically connected to the slot-shaped shielding structure through the ground point, and connected to the ground terminal through the slot-shaped shield structure .
在可选的实施方式中，所述槽状屏蔽结构包括导电层以及应力缓冲材料；In an optional embodiment, the slot-shaped shielding structure includes a conductive layer and a stress buffer material;
所述导电层为具有容置空间的槽状结构，所述屏蔽层通过所述导电层与所述接地端电性连接；The conductive layer is a slot-like structure with an accommodating space, and the shielding layer is electrically connected to the ground terminal through the conductive layer;
所述应力缓冲材料填充于所述容置空间，所述应力缓冲材料的热膨胀系数小于或等于所述电磁屏蔽结构的热膨胀系数。The stress buffer material is filled in the accommodating space, and the thermal expansion coefficient of the stress buffer material is less than or equal to the thermal expansion coefficient of the electromagnetic shielding structure.
第二方面，本发明实施例提供一种电磁屏蔽结构制作方法，所述方法包括：In a second aspect, an embodiment of the present invention provides a method for fabricating an electromagnetic shielding structure, the method comprising:
提供一基板，在所述基板上形成槽状屏蔽结构；providing a substrate on which a groove-shaped shielding structure is formed;
在所述槽状屏蔽结构的两侧贴装至少两个芯片；Mount at least two chips on both sides of the slot-shaped shielding structure;
通过塑封体对所述芯片进行塑封，且在塑封后研磨所述塑封体，以使所述槽状屏蔽结构露出；The chip is plastic-sealed by a plastic-sealing body, and the plastic-sealing body is ground after the plastic-sealing, so as to expose the groove-shaped shielding structure;
在所述塑封体远离所述基板的一侧以及所述塑封体的周侧设置屏蔽层；其中，所述屏蔽层通过所述槽状屏蔽结构与接地端电性连接，以使所述槽状屏蔽结构在所述至少两个芯片之间形成电磁屏蔽。A shielding layer is provided on the side of the plastic packaging body away from the substrate and on the peripheral side of the plastic packaging body; wherein, the shielding layer is electrically connected to the ground terminal through the groove-shaped shielding structure, so that the groove-shaped shielding layer is electrically connected to the ground terminal. The shielding structure forms an electromagnetic shield between the at least two chips.
在可选的实施方式中，所述提供一基板，在所述基板上形成槽状屏蔽结构的步骤包括：In an optional embodiment, the providing a substrate, and the step of forming the slot-shaped shielding structure on the substrate includes:
提供一基板；providing a substrate;
在所述基板的一侧贴装第一材料层，在所述基板远离所述第一材料层的一侧贴装第一金属层；A first material layer is mounted on one side of the substrate, and a first metal layer is mounted on a side of the substrate away from the first material layer;
在所述第一材料层的开槽区域挖槽，直至所述第一金属层，以形成一沟槽；Digging grooves in the grooved area of the first material layer up to the first metal layer to form a groove;
在所述沟槽内电镀导电层，并在电镀所述导电层之后，向所述沟槽内填充应力缓冲材料；Electroplating a conductive layer in the trench, and after electroplating the conductive layer, filling the trench with a stress buffer material;
对设定区域进行保护，对所述第一材料层以及所述第一金属层进行蚀刻，以在所述基板上形成槽状屏蔽结构。A set area is protected, and the first material layer and the first metal layer are etched to form a groove-shaped shielding structure on the substrate.
在可选的实施方式中，在通过塑封体对所述芯片进行塑封之前，所述方法还包括：In an optional embodiment, before the chip is plastic-sealed by a plastic-sealing body, the method further includes:
通过打线，将所述芯片的接地参考点与所述槽状屏蔽结构电性连接，以通过所述槽状屏蔽结构与所述接地端连接。By wire bonding, the ground reference point of the chip is electrically connected to the slot-shaped shielding structure, so as to be connected to the ground terminal through the slot-shaped shielding structure.
在可选的实施方式中，所述提供一基板，在所述基板上形成槽状屏蔽结构的步骤包括：In an optional embodiment, the providing a substrate, and the step of forming the slot-shaped shielding structure on the substrate includes:
提供一基板；providing a substrate;
在所述基板的一侧贴装第一材料层，在所述基板远离所述第一材料层的一侧贴装第一金属层，在所述第一材料层远离所述基板的一侧贴装第二金属层，在所述第二金属层远离所述第一材料层的一侧贴装第二材料层；A first material layer is mounted on one side of the substrate, a first metal layer is mounted on the side of the substrate away from the first material layer, and a first material layer is mounted on the side of the first material layer away from the substrate mounting a second metal layer, and mounting a second material layer on the side of the second metal layer away from the first material layer;
在所述第二材料层的开槽区域挖槽，直至所述第一金属层，以形成沟槽；Digging grooves in the grooved region of the second material layer up to the first metal layer to form grooves;
在所述沟槽内电镀导电层，并在电镀所述导电层之后，向所述沟槽内填充应力缓冲材料；Electroplating a conductive layer in the trench, and after electroplating the conductive layer, filling the trench with a stress buffer material;
对设定区域进行保护，对所述第二材料层、第二金属层、所述第一材料层以及所述第一金属层进行蚀刻，在所述基板上形成具有接地点的槽状屏蔽结构。Protect the set area, etch the second material layer, the second metal layer, the first material layer and the first metal layer, and form a groove-shaped shielding structure with a grounding point on the substrate .
在可选的实施方式中，在通过塑封体对所述芯片进行塑封之前，所述方法还包括：In an optional embodiment, before the chip is plastic-sealed by a plastic-sealing body, the method further includes:
通过打线，将所述芯片的接地参考点与设置于所述槽状屏蔽结构的接地点连接，以通过所述接地点与所述槽状屏蔽结构电性连接，并通过所述槽状屏蔽结构与所述接地端连接。By wire bonding, the ground reference point of the chip is connected to a ground point disposed on the slot-shaped shielding structure, so as to be electrically connected to the slot-shaped shielding structure through the ground point, and to pass through the slot-shaped shielding structure. The structure is connected to the ground terminal.
第三方面，本发明实施例提供一种电子产品，包括前述实施方式中任意一项所述的电磁屏蔽结构。In a third aspect, an embodiment of the present invention provides an electronic product, including the electromagnetic shielding structure described in any one of the foregoing embodiments.
本发明实施例所提供电磁屏蔽结构、电磁屏蔽结构制作方法和电子产品，通过在基板上形成槽状屏蔽结构，并将槽状屏蔽结构贯穿于塑封体以及基板，使得设置于塑封体远离基板一侧的屏蔽层可通过槽状屏蔽结构与接地端电性连接，从而使得槽状屏蔽结构在至少两个芯片之间形成电磁屏蔽，工艺简单，电磁屏蔽效果好，且无需在基板塑封后，通过激光开槽填充屏蔽胶形成电磁屏蔽，因此，可以有效避免因为开槽深度不稳定，导致的屏蔽胶填充不完全，影响电磁屏蔽性能的问题。The electromagnetic shielding structure, the method for manufacturing the electromagnetic shielding structure, and the electronic product provided by the embodiments of the present invention are formed by forming a groove-shaped shielding structure on the substrate, and penetrating the groove-shaped shielding structure through the plastic sealing body and the substrate, so that the groove-shaped shielding structure is disposed on the plastic sealing body away from the substrate. The shielding layer on the side can be electrically connected to the ground terminal through the groove-shaped shielding structure, so that the groove-shaped shielding structure forms electromagnetic shielding between at least two chips, the process is simple, and the electromagnetic shielding effect is good, and there is no need to pass Laser slotting and filling with shielding glue form electromagnetic shielding. Therefore, it can effectively avoid the problem of incomplete filling of shielding glue due to unstable slot depth, which affects the electromagnetic shielding performance.
附图说明Description of drawings
为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。In order to illustrate the technical solutions of the embodiments of the present invention more clearly, the following briefly introduces the accompanying drawings used in the embodiments. It should be understood that the following drawings only show some embodiments of the present invention, and therefore do not It should be regarded as a limitation of the scope, and for those of ordinary skill in the art, other related drawings can also be obtained according to these drawings without any creative effort.
图1为现有技术中电磁屏蔽结构的示意图。FIG. 1 is a schematic diagram of an electromagnetic shielding structure in the prior art.
图2为本发明实施例所提供的一种电磁屏蔽结构示意图。FIG. 2 is a schematic diagram of an electromagnetic shielding structure according to an embodiment of the present invention.
图3为本发明实施例所提供的另一种电磁屏蔽结构示意图。FIG. 3 is a schematic diagram of another electromagnetic shielding structure provided by an embodiment of the present invention.
图4为本发明实施例所提供的又一种电磁屏蔽结构示意图。FIG. 4 is a schematic diagram of another electromagnetic shielding structure provided by an embodiment of the present invention.
图5为本发明实施例所提供的又一种电磁屏蔽结构示意图。FIG. 5 is a schematic diagram of another electromagnetic shielding structure provided by an embodiment of the present invention.
图6为本发明实施例所提供的又一种电磁屏蔽结构示意图。FIG. 6 is a schematic diagram of another electromagnetic shielding structure provided by an embodiment of the present invention.
图7为本发明实施例所提供的电磁屏蔽结构制作方法的一种流程示意图。FIG. 7 is a schematic flowchart of a method for fabricating an electromagnetic shielding structure provided by an embodiment of the present invention.
图8为本发明实施例所提供的电磁屏蔽结构的一种形成示意图。FIG. 8 is a schematic diagram of the formation of an electromagnetic shielding structure provided by an embodiment of the present invention.
图9为本发明实施例所提供的电磁屏蔽结构的另一种形成示意图。FIG. 9 is another schematic diagram of forming an electromagnetic shielding structure provided by an embodiment of the present invention.
图标：100-电磁屏蔽结构；10-基板；20-槽状屏蔽结构；21-导电层；22-应力缓冲材料；30-芯片；40-塑封体；50-屏蔽层；60-锡球；70-接地点。Icon: 100-electromagnetic shielding structure; 10-substrate; 20-slot shielding structure; 21-conductive layer; 22-stress buffer material; 30-chip; 40-plastic body; 50-shielding layer; 60-solder ball; 70 - Ground point.
具体实施方式Detailed ways
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和示出的本发明实施例的组件可以以各种不同的配置来布置和设计。In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments These are some embodiments of the present invention, but not all embodiments. The components of the embodiments of the invention generally described and illustrated in the drawings herein may be arranged and designed in a variety of different configurations.
因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。Thus, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the invention as claimed, but is merely representative of selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。It should be noted that like numerals and letters refer to like items in the following figures, so once an item is defined in one figure, it does not require further definition and explanation in subsequent figures.
在本发明的描述中，需要说明的是，若出现术语“上”、“下”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，或者是该发明产品使用时惯常摆放的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。In the description of the present invention, it should be noted that, if the terms "upper", "lower", "inner", "outer", etc. appear, the orientation or positional relationship indicated is based on the orientation or positional relationship shown in the drawings, or It is the orientation or positional relationship that the product of the invention is usually placed in use, only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation , so it should not be construed as a limitation of the present invention.
此外，若出现术语“第一”、“第二”等仅用于区分描述，而不能理解为指示或暗示相对重要性。In addition, where the terms "first", "second" and the like appear, they are only used to differentiate the description, and should not be construed as indicating or implying relative importance.
需要说明的是，在不冲突的情况下，本发明的实施例中的特征可以相互结合。It should be noted that the features in the embodiments of the present invention may be combined with each other without conflict.
随着半导体行业的快速发展，SIP模组结构被广泛应用于半导体行业中。它将不同功能芯片封装后，进行堆叠，其主要优势为高密度集成，封装产品尺寸小，产品性能优越，信号传输频率快等。With the rapid development of the semiconductor industry, the SIP module structure is widely used in the semiconductor industry. It packs different functional chips and stacks them. Its main advantages are high-density integration, small packaged product size, superior product performance, and fast signal transmission frequency.
目前SIP模组屏蔽结构的制作流程为：1、在一基板上贴装芯片，并完成芯片打线工艺。2、利用塑封料将连接好的芯片线路塑封起来，起到保护作用。3、利用激光机台，在塑封体上挖槽，预留填胶槽。4、利用点胶机台，在挖槽区域，填充屏蔽胶。5、利用烘烤固化胶体。6、利用机台将产品切层单颗。7、将单颗产品摆放在治具上，保护保护底部区域，漏出溅射区域。8、利用溅射机台，完成产品金属溅射，达到电磁屏蔽。At present, the manufacturing process of the SIP module shielding structure is as follows: 1. Mount a chip on a substrate, and complete the chip wire bonding process. 2. Use plastic sealing compound to seal the connected chip circuit to protect it. 3. Use the laser machine to dig grooves on the plastic body and reserve the glue filling grooves. 4. Use the dispensing machine to fill the shielding glue in the grooved area. 5. Use baking to solidify the colloid. 6. Use the machine to cut the product into single pieces. 7. Place a single product on the fixture to protect the bottom area and leak out the sputtering area. 8. Use sputtering machine to complete product metal sputtering to achieve electromagnetic shielding.
基于目前SIP模组电磁屏蔽结构的制作流程可以看出，目前SIP模组电磁屏蔽分区技术，主要是在产品完成封装后，利用激光在塑封体表面进行开槽，填充屏蔽胶，利用中间屏蔽胶，作为电磁屏蔽墙，从而达到电磁屏蔽分区，如图1所示。而由于基板在塑封后，存在翘曲，因此激光开槽时会存在开槽深度不稳定的问题，导致屏蔽胶填充不完全，从而影响其电磁屏蔽性能。Based on the current production process of the electromagnetic shielding structure of the SIP module, it can be seen that the current electromagnetic shielding partition technology of the SIP module mainly uses the laser to make grooves on the surface of the plastic package after the product is packaged, fill the shielding glue, and use the intermediate shielding glue. , as an electromagnetic shielding wall, so as to achieve electromagnetic shielding partition, as shown in Figure 1. However, since the substrate is warped after plastic sealing, there is a problem of unstable groove depth during laser grooving, resulting in incomplete filling of the shielding glue, thereby affecting its electromagnetic shielding performance.
且利用中间屏蔽胶，作为电磁屏蔽墙，在后续的可靠性测试中，封装结构中的塑封层由于热胀冷缩作用或吸湿膨胀作用，会对封装结构中芯片元器件以及中间屏蔽胶层形成应力作用，并形成弯曲/拉扯作用力，从而使芯片元器件以及屏蔽胶失效，降低了封装结构整体的可靠性性能、影响产品电磁屏蔽性能以及使用寿命。And using the intermediate shielding glue as the electromagnetic shielding wall, in the subsequent reliability test, the plastic sealing layer in the packaging structure will form the chip components and the intermediate shielding glue layer in the packaging structure due to thermal expansion and cold contraction or moisture absorption expansion. Stress acts, and bending/pulling force is formed, so that the chip components and the shielding glue fail, reducing the overall reliability performance of the package structure, affecting the electromagnetic shielding performance and service life of the product.
除此之外，由于现有技术中电磁屏蔽接地线主要布置在基板内层，且通常在基板切割道左右两边，布线路径复杂，在进行切割工艺时，容易发生偏移，进而切割到接地线，导致接地线短路，从而导致产品电磁屏蔽性能失效，或者在进行激光开槽时，无法较好的掌控开槽深度，进而切割到接地线，导致接地线短路，从而导致产品电磁屏蔽性能失效。In addition, since the electromagnetic shielding ground wire in the prior art is mainly arranged in the inner layer of the substrate, and usually on the left and right sides of the substrate cutting track, the wiring path is complicated, and it is easy to be offset during the cutting process, and then the ground wire is cut. , resulting in a short circuit of the ground wire, resulting in the failure of the electromagnetic shielding performance of the product, or when the laser slotting is performed, the depth of the slot cannot be well controlled, and then the ground wire is cut, resulting in a short circuit of the ground wire, resulting in the failure of the electromagnetic shielding performance of the product.
且随着电子产品越来越多地运用于通信高频信号领域，要求接地线的布线路径越短越好，其中，布线路径越短，达到的电磁屏蔽效果也越高。而由于现有技术中电磁屏蔽接地线布置在基板内层，因此现有布线技术满足不了高频的要求。And as electronic products are more and more used in the field of communication high-frequency signals, the wiring path of the ground wire is required to be as short as possible. The shorter the wiring path, the higher the electromagnetic shielding effect. However, since the electromagnetic shielding ground wire is arranged in the inner layer of the substrate in the prior art, the prior wiring technology cannot meet the requirement of high frequency.
基于上述研究，本实施例提供了一种电磁屏蔽结构，以改善上述问题。Based on the above research, this embodiment provides an electromagnetic shielding structure to improve the above problems.
请结合参阅图2，本实施例所提供的电磁屏蔽结构100，包括:基板10，形成于基板10上并沿垂直基板10的方向延伸的槽状屏蔽结构20，设置于槽状屏蔽结构20两侧的至少两个芯片30，覆盖于至少两个芯片30上的塑封体40，设置于塑封体40远离基板10一侧、且包围塑封体40周侧的屏蔽层50。2, the
槽状屏蔽结构20贯穿于塑封体40以及基板10，屏蔽层50通过槽状屏蔽结构20与接地端电性连接，以使槽状屏蔽结构20在至少两个芯片30之间形成电磁屏蔽。The slot-shaped
本实施例所提供的电磁屏蔽结构，通过在基板上形成沿垂直基板的方向延伸的槽状屏蔽结构，并将槽状屏蔽结构贯穿于塑封体以及基板，如此，便可以使得屏蔽层通过槽状屏蔽结构与接地端电性连接，从而使得槽状屏蔽结构在至少两个芯片之间形成电磁屏蔽。In the electromagnetic shielding structure provided in this embodiment, a groove-shaped shielding structure extending in a direction perpendicular to the substrate is formed on the substrate, and the groove-shaped shielding structure is penetrated through the plastic package and the substrate, so that the shielding layer can pass through the groove-shaped shielding structure. The shielding structure is electrically connected to the ground terminal, so that the slot-shaped shielding structure forms electromagnetic shielding between at least two chips.
本实施例所提供的电磁屏蔽结构，通过将槽状屏蔽结构作为屏蔽墙，在至少两个芯片之间形成电磁屏蔽，无需在基板塑封后，通过激光开槽填充屏蔽胶形成电磁屏蔽，因此，可以有效避免因为开槽深度不稳定，导致的屏蔽胶填充不完全，影响电磁屏蔽性能的问题，且相较于现有技术通过激光开槽填屏蔽胶的方式，本实施例所提供的电磁屏蔽结构，在基板制作时，直接在基板上形成槽状屏蔽结构，将槽状屏蔽结构作为屏蔽墙，工艺简单、电磁屏蔽效果好。In the electromagnetic shielding structure provided in this embodiment, electromagnetic shielding is formed between at least two chips by using the groove-shaped shielding structure as a shielding wall, and it is not necessary to fill the shielding glue to form electromagnetic shielding by laser slotting after plastic sealing of the substrate. Therefore, It can effectively avoid the problem of incomplete filling of the shielding glue due to the unstable depth of the slot, which affects the electromagnetic shielding performance. structure, when the substrate is fabricated, a groove-shaped shielding structure is directly formed on the substrate, and the groove-shaped shielding structure is used as a shielding wall, the process is simple, and the electromagnetic shielding effect is good.
本实施例所提供的电磁屏蔽结构，采用垂直连接接地线的方式，在将槽状屏蔽结构贯穿基板后，与接地端直接连接，大大缩短了电荷传导路径，大幅了提升电磁屏蔽效果，且无需在基板内层布置接地线，简化了基板内层的布线方式。The electromagnetic shielding structure provided in this embodiment adopts the method of connecting the ground wire vertically. After the slot-shaped shielding structure penetrates the substrate, it is directly connected to the ground terminal, which greatly shortens the charge conduction path, greatly improves the electromagnetic shielding effect, and does not require The ground wire is arranged in the inner layer of the substrate, which simplifies the wiring mode of the inner layer of the substrate.
需要说明的是，在本实施例中，槽状屏蔽结构20贯穿于塑封体40以及基板10，指的是槽状屏蔽结构20远离基板10的一端与塑封体40的表面处于同一水平，另一端与基板10远离芯片30的一面处于同一水平。It should be noted that, in this embodiment, the groove-shaped
作为一种可选的实施方式，本实施例可以通过在基板背面，即远离芯片的一侧，焊接锡球60，通过锡球60将槽状屏蔽结构20与接地端连接，如图3所示。As an optional implementation manner, in this embodiment,
需要说明的是，本实施例对于需要电磁屏蔽的芯片（或电子元器件等），可以在芯片之间设置槽状屏蔽结构，以达到电磁屏蔽，而对于无需电磁屏蔽的芯片，则可以不用设置槽状屏蔽结构。因此，可以理解地，在本实施例中，设置于槽状屏蔽结构两侧的芯片的数量可以不同，本实施例不做具体限制，例如，槽状屏蔽结构左侧的芯片的数量为3个，槽状屏蔽结构右侧的芯片的数量为2个。同样地，在本实施例中，设置于槽状屏蔽结构两侧的芯片的堆叠方式也可以不同，具体地，可以根据实际需要而设置。It should be noted that, in this embodiment, for chips (or electronic components, etc.) that need electromagnetic shielding, a slot-shaped shielding structure can be provided between the chips to achieve electromagnetic shielding, while for chips that do not need electromagnetic shielding, it is not necessary to provide Slotted shielding structure. Therefore, it can be understood that in this embodiment, the number of chips disposed on both sides of the slot-shaped shielding structure may be different, which is not specifically limited in this embodiment. For example, the number of chips on the left side of the slot-shaped shielding structure is 3 , the number of chips on the right side of the slot-shaped shielding structure is 2. Likewise, in this embodiment, the stacking manners of the chips disposed on both sides of the slot-shaped shielding structure may also be different, and specifically, may be set according to actual needs.
进一步的，请结合参阅图4，在本实施例中，槽状屏蔽结构20包括导电层21以及应力缓冲材料22。Further, please refer to FIG. 4 , in this embodiment, the slot-shaped
导电层21为具有容置空间的槽状结构，屏蔽层50通过导电层21与接地端电性连接。The
应力缓冲材料22填充于容置空间，应力缓冲材料22的热膨胀系数小于或等于电磁屏蔽结构100的热膨胀系数。The
其中，如图4所示，导电层21设置为具有容置空间的槽状结构，其远离基板10的一端与屏蔽层50电性连接，另一端（即贯穿基板的一端）为接地端连接区域（接地端pad），与接地端连接，因此，屏蔽层50可通过导电层21与接地端电性连接，从而在芯片30之间达到电磁屏蔽的效果。Wherein, as shown in FIG. 4 , the
可选的，在本实施例中，所述导电层21可以由铜、银、铝等导电金属材料制成。Optionally, in this embodiment, the
作为一种可选的实施方式，本实施例所提供的屏蔽层50也可以由铜、银、铝等导电金属材料制成。为了节约成本以及便于屏蔽层50和导电层21的连接，本实施例所提供的屏蔽层50和导电层21的制作材料可以相同。As an optional implementation manner, the
本实施例通过在导电层21的容置空间中填充应力缓冲材料22，将应力缓冲材料22的热膨胀系数小于或等于电磁屏蔽结构100的热膨胀系数，如此，可通过应力缓冲材料22来缓冲塑封层的内应力，以及释放由基板10翘曲所带来的芯片30之间内部的应力，从而解决塑封层在热胀冷缩作用和吸湿膨胀作用下易对芯片元器件产生不良应力并形成弯曲/拉扯作用力的问题，避免了芯片受内应力的影响，提升了电磁屏蔽性能。In this embodiment, the
可选的，在本实施中，所述应力缓冲材料22可以为胶层或环氧树脂等材料，只需要其热膨胀系数小于或等于电磁屏蔽结构的热膨胀系数即可。Optionally, in this embodiment, the
本实施例所提供的槽状屏蔽结构，一方面通过将导电层贯穿于基板以及塑封体，使得导电层可直接与屏蔽层和接地端连接，实现了芯片间的电磁屏蔽，另一方面，通过在导电层的容置空间中填充应力缓冲材料，又可以缓冲塑封层的内应力以及释放由基板翘曲所带来的芯片之间内部的应力，避免了芯片受内应力的影响，进一步提升了电磁屏蔽性能。并且本实施例所提供的槽状屏蔽结构，通过导电层直接与接地端连接，大大缩短了电荷传导路径，大幅了提升电磁屏蔽效果，且简化了基板内层的布线方式。In the groove-shaped shielding structure provided in this embodiment, on the one hand, the conductive layer is penetrated through the substrate and the plastic sealing body, so that the conductive layer can be directly connected with the shielding layer and the ground terminal, thereby realizing electromagnetic shielding between chips. Stress buffering material is filled in the accommodation space of the conductive layer, which can buffer the internal stress of the plastic packaging layer and release the internal stress between the chips caused by the warpage of the substrate, so as to avoid the chip from being affected by the internal stress, and further improve the Electromagnetic shielding performance. In addition, the groove-shaped shielding structure provided in this embodiment is directly connected to the ground terminal through the conductive layer, which greatly shortens the charge conduction path, greatly improves the electromagnetic shielding effect, and simplifies the wiring method of the inner layer of the substrate.
在可选的实施方式中，请结合参阅图5，在本实施例中，芯片30的接地参考点通过打线与槽状屏蔽结构20电性连接，以通过槽状屏蔽结构20与接地端连接。In an optional embodiment, please refer to FIG. 5 in conjunction with, in this embodiment, the ground reference point of the
其中，如图5所示，通过打线的方式，将芯片30的接地参考点与槽状屏蔽结构20中的导电层21电性连接，实现了芯片30与槽状屏蔽结构20的线路相连，且由于槽状屏蔽结构20与接地端连接，因此，芯片30可以通过槽状屏蔽结构20与接地端连接，实现芯片30的接地连接。Wherein, as shown in FIG. 5 , the ground reference point of the
为了便于芯片30与槽状屏蔽结构20的连接，如图6所示，在可选的实施方式中，电磁屏蔽结构100还包括至少一个接地点70，接地点70设置于槽状屏蔽结构20朝向芯片30的一侧，并与槽状屏蔽结构20电性连接。In order to facilitate the connection between the
芯片30的接地参考点通过打线与接地点70电性连接，以通过接地点70与槽状屏蔽结构20电性连接，并通过槽状屏蔽结构20与接地端连接。The ground reference point of the
其中，接地点70与槽状屏蔽结构20电性连接，即接地点70与槽状屏蔽结构20中的导电层21电性连接。芯片30的接地参考点与接地点70电性连接，由于接地点70与槽状屏蔽结构20中的导电层21电性连接，因此，芯片30与槽状屏蔽结构20中的导电层线路相连，进而，芯片30可通过槽状屏蔽结构20与接地端连接，实现芯片30的接地连接。The
可选的，在本实施例中，利用打线方式，可以通过铜线、合金线等导电金属线将芯片30的接地参考点与槽状屏蔽结构20中的导电层21连接，或者将芯片30的接地参考点与接地点70连接。Optionally, in this embodiment, by using a wire bonding method, the ground reference point of the
本实施例通过打线将芯片的接地参考点与槽状屏蔽结构电性连接，以实现接地，可以在进行切割时或者激光开槽时，避免切割偏移导致接地线短路，从而导致电磁屏蔽性能失效的情况发生，同时也可避免由于激光开槽深度无法掌控导致接地线短路的情况发生，大大提升了产品良率。In this embodiment, the ground reference point of the chip is electrically connected to the slot-shaped shielding structure by wire bonding, so as to realize the grounding. During cutting or laser slotting, it is possible to avoid the short circuit of the ground wire caused by the cutting offset, thereby leading to the electromagnetic shielding performance. Failure occurs, and at the same time, it can also avoid the occurrence of short-circuiting of the ground wire due to the uncontrollable depth of laser slotting, which greatly improves the product yield.
在上述基础上，请结合参阅图7，本实施例还提供一种电磁屏蔽结构制作方法，方法包括：On the basis of the above, please refer to FIG. 7 , this embodiment also provides a method for fabricating an electromagnetic shielding structure. The method includes:
步骤S10：提供一基板，在基板上形成槽状屏蔽结构。Step S10 : providing a substrate, and forming a groove-shaped shielding structure on the substrate.
步骤S20：在槽状屏蔽结构的两侧贴装至少两个芯片。Step S20: Mounting at least two chips on both sides of the slot-shaped shielding structure.
步骤S30：通过塑封体对芯片进行塑封，且在塑封后研磨塑封体，以使槽状屏蔽结构露出。Step S30 : plastic-encapsulate the chip through a plastic-encapsulation body, and grind the plastic-encapsulation body after the plastic-encapsulation, so as to expose the groove-shaped shielding structure.
步骤S40：在塑封体远离基板的一侧以及塑封体的周侧设置屏蔽层；其中，屏蔽层通过槽状屏蔽结构与接地端电性连接，以使槽状屏蔽结构在至少两个芯片之间形成电磁屏蔽。Step S40 : providing a shielding layer on the side of the plastic packaging body away from the substrate and on the peripheral side of the plastic packaging body; wherein the shielding layer is electrically connected to the ground terminal through the groove-shaped shielding structure, so that the groove-shaped shielding structure is between at least two chips form an electromagnetic shield.
其中，通过塑封体对芯片进行塑封，可以对芯片进行保护。在通过塑封体对芯片进行塑封后，塑封体可能将槽状屏蔽结构包埋，导致槽状屏蔽结构无法与屏蔽层连接，因此，在塑封后，需要对塑封体的表面，即远离基板的一侧进行研磨，以使槽状屏蔽结构贯穿塑封体，保证槽状屏蔽结构与塑封体的表面在同一水平，如此，在塑封体远离基板的一侧以及塑封体的周侧设置屏蔽层时，即可使屏蔽层与槽状屏蔽结构连接。The chip can be protected by plastic-sealing the chip through a plastic-sealing body. After the chip is encapsulated by the plastic encapsulation body, the plastic encapsulation body may embed the groove-shaped shielding structure, so that the slot-like shielding structure cannot be connected to the shielding layer. Grinding is performed on the side of the plastic package so that the groove-shaped shielding structure penetrates through the plastic packaging body and ensures that the groove-shaped shielding structure and the surface of the plastic packaging body are at the same level. The shield can be connected to the slotted shield structure.
作为一种可选的实施方式，本实施例可通过溅射、电镀等方式，在塑封体远离基板的一侧以及塑封体的周侧设置屏蔽层。As an optional implementation manner, in this embodiment, a shielding layer may be provided on the side of the plastic sealing body away from the substrate and on the peripheral side of the plastic sealing body by means of sputtering, electroplating, or the like.
以溅射方式进行举例说明，在对塑封体进行研磨后，将电磁屏蔽结构放在治具上，保护电磁屏蔽结构的底部区域，漏出溅射区域（即4个侧面以及表面），然后进行溅射，形成屏蔽层，如此，便可以使得屏蔽层与槽状屏蔽结构相连，即屏蔽层与槽状屏蔽结构中的导电层相连，从而实现芯片间的电磁屏蔽。Take the sputtering method as an example. After grinding the plastic body, place the electromagnetic shielding structure on the jig to protect the bottom area of the electromagnetic shielding structure and leak out the sputtering area (ie, the 4 sides and the surface), and then perform sputtering. In this way, the shielding layer can be connected with the slot-shaped shielding structure, that is, the shielding layer is connected with the conductive layer in the slot-shaped shielding structure, so as to realize electromagnetic shielding between chips.
为了便于槽状屏蔽结构与接地端的连接，在本实施例中，在对塑封体进行研磨，使槽状屏蔽结构露出后，可以在基板背面，即远离塑封体的一侧进行植球工艺，将锡球与槽状屏蔽结构的接地端pad相连，如此，槽状屏蔽结构便可以通过锡球与接地端连接。In order to facilitate the connection between the groove-shaped shielding structure and the ground terminal, in this embodiment, after the plastic sealing body is ground to expose the groove-shaped shielding structure, a ball-mounting process can be performed on the back of the substrate, that is, the side away from the plastic sealing body, and the The solder balls are connected to the ground terminal pad of the slot-shaped shielding structure, so that the slot-shaped shielding structure can be connected to the ground terminal through the solder balls.
需要说明的是，在本实施例中，在贴装芯片时，还包括对被动元件（例如电阻、电容、电感等元件）的贴装。It should be noted that, in this embodiment, when the chip is mounted, the mounting of passive components (for example, components such as resistors, capacitors, and inductors) is also included.
在可选的实施方式中，请结合参阅图8，在本实施例中，在基板上形成槽状屏蔽结构的步骤可以包括：In an optional implementation manner, referring to FIG. 8 in conjunction with FIG. 8 , in this embodiment, the step of forming the slot-shaped shielding structure on the substrate may include:
提供一基板。A substrate is provided.
在基板的一侧贴装第一材料层，在基板远离第一材料层的一侧贴装第一金属层。The first material layer is mounted on one side of the substrate, and the first metal layer is mounted on the side of the substrate away from the first material layer.
在第一材料层的开槽区域挖槽，直至第一金属层，以形成一沟槽。A groove is formed in the grooved region of the first material layer until the first metal layer is reached.
在沟槽内电镀导电层，并在电镀导电层之后，向沟槽内填充应力缓冲材料。A conductive layer is plated in the trench, and after the conductive layer is plated, the trench is filled with a stress buffer material.
对设定区域进行保护，对第一材料层以及第一金属层进行蚀刻，在基板上形成槽状屏蔽结构。The set area is protected, the first material layer and the first metal layer are etched, and a groove-shaped shielding structure is formed on the substrate.
其中，如图8所示，本实施例首先在基板的表面贴装第一材料层，在基板背面贴装第一金属层，然后在第一材料层的开槽区域挖槽，直至第一金属层，以形成一沟槽，在沟槽内电镀导电层，并在电镀导电层之后，向沟槽内填充应力缓冲材料，在填充后，利用保护膜对设定区域（即不需要去除的区域）进行保护，即对沟槽所在区域进行保护，然后将第一材料层以及第一金属层的其他区域进行蚀刻或采用激光进行去除，在基板上形成槽状屏蔽结构以及槽状屏蔽结构的接地端pad。Among them, as shown in FIG. 8 , in this embodiment, the first material layer is firstly mounted on the surface of the substrate, the first metal layer is mounted on the back of the substrate, and then grooves are dug in the grooved area of the first material layer until the first metal layer is layer to form a trench, electroplating a conductive layer in the trench, and after electroplating the conductive layer, fill the trench with stress buffer material, after filling, use the protective film to set the area (that is, the area that does not need to be removed) ) for protection, that is, to protect the area where the groove is located, and then etch or remove the first material layer and other areas of the first metal layer by laser to form a groove-shaped shielding structure on the substrate and the grounding of the groove-shaped shielding structure end pad.
作为另一种可选的实施方式，在本实施例中，请结合参阅图9，在基板上形成槽状屏蔽结构的步骤还可以包括：As another optional implementation manner, in this embodiment, referring to FIG. 9 in conjunction with FIG. 9 , the step of forming the groove-shaped shielding structure on the substrate may further include:
提供一基板。A substrate is provided.
在基板的一侧贴装第一材料层，在基板远离第一材料层的一侧贴装第一金属层，在第一材料层远离基板的一侧贴装第二金属层，在第二金属层远离第一材料层的一侧贴装第二材料层。The first material layer is mounted on one side of the substrate, the first metal layer is mounted on the side of the substrate away from the first material layer, the second metal layer is mounted on the side of the first material layer away from the substrate, and the second metal layer is mounted on the side of the first material layer away from the substrate The second material layer is attached to the side of the layer away from the first material layer.
在第二材料层的开槽区域挖槽，直至第一金属层，以形成沟槽。A trench is formed in the trenched region of the second material layer up to the first metal layer.
在沟槽内电镀导电层，并在电镀导电层之后，向沟槽内填充应力缓冲材料。A conductive layer is plated in the trench, and after the conductive layer is plated, the trench is filled with a stress buffer material.
对设定区域进行保护，对第二材料层、第二金属层、第一材料层以及第一金属层进行蚀刻，在基板上形成具有接地点的槽状屏蔽结构。The set area is protected, the second material layer, the second metal layer, the first material layer and the first metal layer are etched, and a groove-shaped shielding structure with a ground point is formed on the substrate.
其中，本实施例通过设置第二金属层，在对第二材料层、第二金属层、第一材料层以及第一金属层进行蚀刻后，可以在槽状屏蔽结构上形成接地点，并且使接地点与导电层连接。In this embodiment, by providing the second metal layer, after the second material layer, the second metal layer, the first material layer and the first metal layer are etched, a grounding point can be formed on the groove-shaped shielding structure, and the The ground point is connected to the conductive layer.
作为一种可选的实施方式，在本实施例中，在槽状屏蔽结构上形成接地点后，可以在接地点的表面镀有机保焊膜（Organic Solderability Preservatives，OSP）以及Ni/Au金属层等，以便于芯片通过打线方式与接地点线路相连。As an optional implementation manner, in this embodiment, after the grounding point is formed on the slot-shaped shielding structure, the surface of the grounding point may be plated with an organic solder protection film (Organic Solderability Preservatives, OSP) and a Ni/Au metal layer etc., so that the chip can be connected to the ground point circuit by wire bonding.
可选的，在本实施例中，第一材料层可以为聚丙烯（Polypropylene，PP）层，第一金属层可以为铜层，第二材料层可以PP层、第二金属层可以为铜层。Optionally, in this embodiment, the first material layer may be a polypropylene (Polypropylene, PP) layer, the first metal layer may be a copper layer, the second material layer may be a PP layer, and the second metal layer may be a copper layer .
基于上述形成槽状屏蔽结构的方式，本实施例中的芯片可通过打线，将芯片与槽状屏蔽结构电性连接，或者通过打线，将芯片与设置于槽状屏蔽结构的接地点连接，以通过接地点与槽状屏蔽结构电性连接。即在通过塑封体对芯片进行塑封之前，本实施例所提供的方法还包括：Based on the above method of forming the slot-shaped shielding structure, the chip in this embodiment can be electrically connected to the slot-shaped shielding structure by wire bonding, or the chip can be connected to the ground point disposed in the slot-shaped shielding structure by wire bonding , so as to be electrically connected to the slot-shaped shielding structure through the ground point. That is, before the chip is plastic-sealed by the plastic-sealing body, the method provided in this embodiment further includes:
通过打线，将芯片与槽状屏蔽结构电性连接，以通过槽状屏蔽结构与接地端连接。或，通过打线，将芯片与设置于槽状屏蔽结构的接地点连接，以通过接地点与槽状屏蔽结构电性连接，并通过槽状屏蔽结构与接地端连接。The chip is electrically connected to the slot-shaped shielding structure by wire bonding, so as to be connected to the ground terminal through the slot-shaped shielding structure. Or, by wire bonding, the chip is connected to a ground point disposed on the slot-shaped shielding structure, so as to be electrically connected to the slot-shaped shielding structure through the ground point, and connected to the ground terminal through the slot-shaped shielding structure.
基于本实施例所提供的电磁屏蔽结构制作方法，在实际的应用中，可以直接提供具有槽状屏蔽结构的基板，然后在基板上贴装芯片并进行打线，再利用塑封料将连接好的芯片线路塑封起来，起到保护作用，然后在利用机台将产品切成单颗，再对单颗产品进行溅射，形成屏蔽层，达到电磁屏蔽。相较于现有的制作流程，本实施例所提供的电磁屏蔽结构制作方法，工艺流程更为简单，成本更低，且所制备的电磁屏蔽结构，接地线布线简单、电磁屏蔽性能好且还能避免芯片受内应力的影响。Based on the method for fabricating the electromagnetic shielding structure provided in this embodiment, in practical applications, a substrate with a groove-shaped shielding structure can be directly provided, and then chips are mounted on the substrate and wire bonding is performed, and then the connected wells are connected by a plastic sealing compound. The chip circuit is plastic-encapsulated to play a protective role, and then the product is cut into single pieces by the machine, and then the single product is sputtered to form a shielding layer to achieve electromagnetic shielding. Compared with the existing manufacturing process, the manufacturing method of the electromagnetic shielding structure provided by this embodiment has simpler technological process and lower cost, and the prepared electromagnetic shielding structure has simple grounding wire wiring, good electromagnetic shielding performance and high performance. It can prevent the chip from being affected by internal stress.
在上述基础上，本实施例提供一种电子产品，包括前述实施方式任一项所述的电磁屏蔽结构。Based on the above, this embodiment provides an electronic product including the electromagnetic shielding structure described in any one of the foregoing embodiments.
所属领域的技术人员可以清楚地了解到，为描述的方便和简洁，上述描述的电子产品的实现原理，可以参考前述方法和结构中的对应过程，在此不再过多赘述。Those skilled in the art can clearly understand that, for the convenience and brevity of the description, for the implementation principle of the electronic product described above, reference may be made to the corresponding process in the foregoing method and structure, which will not be repeated here.
综上，本实施例所提供电磁屏蔽结构、电磁屏蔽结构制作方法和电子产品，通过在基板上形成槽状屏蔽结构，并将槽状屏蔽结构贯穿于塑封体以及基板，使得设置于塑封体远离基板一侧的屏蔽层，可通过槽状屏蔽结构与接地端电性连接，从而使得槽状屏蔽结构在至少两个芯片之间形成电磁屏蔽，工艺简单，电磁屏蔽效果好，且无需在基板塑封后，通过激光开槽填充屏蔽胶形成电磁屏蔽，因此，可以有效避免因为开槽深度不稳定，导致的屏蔽胶填充不完全，影响电磁屏蔽性能的问题。To sum up, the electromagnetic shielding structure, the method for making the electromagnetic shielding structure and the electronic product provided by this embodiment are formed by forming the groove-shaped shielding structure on the substrate, and penetrating the groove-shaped shielding structure through the plastic sealing body and the substrate, so that the groove-shaped shielding structure is disposed on the plastic sealing body away from The shielding layer on one side of the substrate can be electrically connected to the ground terminal through the groove-shaped shielding structure, so that the groove-shaped shielding structure forms electromagnetic shielding between at least two chips, the process is simple, the electromagnetic shielding effect is good, and there is no need for plastic sealing on the substrate After that, electromagnetic shielding is formed by filling the shielding glue through laser slotting. Therefore, the problem of incomplete filling of the shielding glue due to unstable slot depth and affecting the electromagnetic shielding performance can be effectively avoided.
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。The above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art who is familiar with the technical scope disclosed by the present invention can easily think of changes or substitutions. All should be included within the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.
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| CN114375111B (en) * | 2020-10-14 | 2023-06-02 | 华为技术有限公司 | Packaging module, packaging method and electronic equipment |
| CN112490218A (en) * | 2020-12-14 | 2021-03-12 | 甬矽电子(宁波)股份有限公司 | Packaging structure with electromagnetic shielding and manufacturing method thereof |
| CN112490218B (en) * | 2020-12-14 | 2024-04-16 | 甬矽电子(宁波)股份有限公司 | Packaging structure with electromagnetic shielding and manufacturing method of packaging structure |
| CN113823605A (en) * | 2021-08-11 | 2021-12-21 | 紫光宏茂微电子(上海)有限公司 | Chip packaging structure and manufacturing method thereof |
| CN114975141A (en) * | 2022-05-30 | 2022-08-30 | 东莞忆联信息系统有限公司 | Processing method of multifunctional storage chip packaging structure |
| CN115763435A (en) * | 2022-11-08 | 2023-03-07 | 北京唯捷创芯精测科技有限责任公司 | Electromagnetic shielding packaging unit and method, substrate, circuit and electronic equipment |
| CN116013881A (en) * | 2023-03-28 | 2023-04-25 | 甬矽电子(宁波)股份有限公司 | Chip packaging structure, preparation method of chip packaging structure and wire bonding repair method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111739885B (en) | 2021-04-02 |
| CN111554675A (en) | 2020-08-18 |
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