CN111613726A - Thin film metal resistor and method of making the same - Google Patents

Abstract

The present invention provides a thin film metal resistor and a manufacturing method thereof. The metal layer in the thin film metal resistor has protrusions, and the protrusions increase the thickness of the portion of the metal layer corresponding to the connection holes. When the connection holes are formed by etching, the connection holes can be extended into the protrusions without further engraving through the metal layer, which avoids the problem of poor connection between the connection electrodes arranged in the connection holes and the metal layer, and effectively improves the thin film metal layer. resistor performance.

Description

Thin film metal resistor and method of making the same

technical field

The invention relates to the technical field of semiconductors, in particular to a thin film metal resistor and a manufacturing method thereof.

Background technique

With the improvement of people's living standards, the application of electronic products is more and more extensive, and various semiconductor products are usually used in electronic products, and thin film metal resistors are often used in various semiconductor products.

Usually, in the production of thin-film metal resistors, a metal layer and a dielectric layer are sequentially formed on the substrate, and then a through hole that penetrates the dielectric layer and extends into the metal layer to fill the connection electrode is formed by etching, and finally formed in the through hole. Connect the electrodes. In the process of etching to form the via hole, the phenomenon of etching through the metal layer usually occurs. Therefore, after the connection electrode is formed in the through hole, the connection electrode is in contact with the substrate, resulting in poor connection performance between the connection electrode and the metal layer, which affects the overall performance of the thin film metal resistor.

SUMMARY OF THE INVENTION

The purpose of the present invention is to provide a thin-film metal electrode and a manufacturing method thereof, so as to solve the problem of poor performance of the existing thin-film metal resistance.

In order to solve the above technical problems, the present invention provides a thin film metal resistor, comprising a substrate, a metal layer and a dielectric layer sequentially arranged on the substrate, the metal layer has protrusions, and the thin film metal resistor also has A connection hole corresponding to the position of the protrusion, the connection hole penetrates the dielectric layer and extends into the protrusion, and a connection electrode is arranged in the connection hole, and the connection electrode is used for connecting with the protrusion. Metal layer connection.

Optionally, the metal layer has a first portion and a second portion, and the second portion protrudes in a direction away from the substrate relative to the first portion to form the protrusion.

Optionally, the metal layer includes a metal pad layer and a metal thin film layer, the metal pad layer is formed on the substrate, and the metal thin film layer covers the top surface of the substrate and also covers all The top surface and sidewalls of the metal pad layer, wherein the part of the metal thin film layer covering the top surface of the substrate constitutes the first part, and the part of the metal thin film layer covering the metal pad layer and the metal pad A layer constitutes the second portion.

Optionally, the metal layer has a first portion and a second portion, and the second portion protrudes in a direction toward the substrate relative to the first portion to form the protrusion.

Optionally, the metal layer includes a metal pad layer and a metal thin film layer, the metal pad layer is formed on the substrate, and a support layer is further formed on the periphery of the metal pad layer, and the support layer covers The sidewall of the metal cushion layer, and the metal thin film layer covers the top surface of the metal cushion layer and the support layer.

Optionally, the first part is a planar structure.

所述第二部分的厚度为

Optionally, the thickness of the first part is

The thickness of the second part is

Optionally, the distance that the connection hole extends into the metal layer is

Optionally, the material of the first part and the second part is one or a mixture of titanium, tantalum, titanium nitride and titanium nitride.

In order to solve the above problems, the present invention also provides a method for manufacturing a thin film metal resistor, comprising:

provide a substrate;

forming a metal layer on the substrate, the metal layer having protrusions;

forming a dielectric layer on the metal layer;

etching the dielectric layer and the metal layer in sequence to form connection holes corresponding to the positions of the protrusions, the connection holes penetrating the dielectric layer and extending into the protrusions;

A conductive material is filled in the connection holes to form connection electrodes.

Optionally, the method for forming the metal layer includes:

forming a first metal layer on the substrate;

forming a first mask layer on the first metal layer;

Using the first mask layer mask, etching the first metal layer to form a metal pad layer;

removing the first mask layer;

A metal thin film layer is formed, the metal thin film layer covers the top surface of the substrate, and also covers the top surface and sidewalls of the metal pad layer, and the part of the metal thin film layer covering the metal pad layer and all The metal cushion layer constitutes the protrusion.

Optionally, the method for forming the metal layer includes:

forming the metal material layer on the substrate;

forming a third mask layer on the metal material layer, an opening is formed in the third mask layer;

Using the third mask layer as a mask to partially remove the portion of the metal material layer corresponding to the opening to form the metal layer, and use the portion of the metal material layer that does not correspond to the opening the protrusions constituting the metal layer;

The third mask layer is removed.

Optionally, the method for forming the metal layer includes:

forming a support layer and a metal cushion layer on the substrate, the support layer is located at the periphery of the metal cushion layer and covers the sidewall of the metal cushion layer;

A metal thin film layer is formed on the support layer and the metal pad layer.

Optionally, oxygen gas is supplied while forming the metal layer on the substrate, so as to increase the resistance value of the metal layer.

The present invention provides a thin film metal resistor and a manufacturing method thereof. The metal layer in the thin film metal resistor has protrusions, and the protrusions increase the thickness of the portion of the metal layer corresponding to the connection holes. When the connection holes are formed by etching, the connection holes can be extended into the protrusions without further engraving through the metal layer, which avoids the problem of poor connection between the connection electrodes disposed in the connection holes and the metal layer, and effectively improves the thin film metal layer. resistor performance.

Description of drawings

1 is a schematic structural diagram of a thin film metal resistor according to Embodiment 1 of the present invention;

2 is a schematic structural diagram of a thin film metal resistor according to Embodiment 2 of the present invention;

3 is a schematic structural diagram of a thin film metal resistor according to Embodiment 3 of the present invention;

4 is a schematic structural diagram of a thin film metal resistor according to Embodiment 4 of the present invention;

5 is a flowchart of a method for manufacturing a thin film metal resistor according to Embodiment 1 of the present invention;

6a-6f are schematic process diagrams of the manufacturing method of the thin film metal resistor according to the first embodiment of the present invention;

7a-7b are partial process schematic diagrams of the manufacturing method of the thin film metal resistor according to the second embodiment of the present invention;

8a-8b are partial process schematic diagrams of the manufacturing method of the thin film metal resistor according to the fourth embodiment of the present invention;

Among them, the reference numerals are as follows:

1-substrate;

2- metal layer;

21A, 21B, 21C, 21D - first part; 22A, 22B, 22C, 22D - second part;

23A, 23B-metal cushion layer; 24A, 24B-metal thin film layer;

3-dielectric layer;

4-connection hole;

5- Connect the electrodes;

6- support layer;

101-first mask layer; 102-second mask layer;

103 - the third mask layer;

200-metal material layer; 230-first metal layer

A-opening.

Detailed ways

A thin film metal resistor and a method for manufacturing the thin film metal resistor proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that, the accompanying drawings are all in a very simplified form and in inaccurate scales, and are only used to facilitate and clearly assist the purpose of explaining the embodiments of the present invention. Furthermore, the structures shown in the drawings are often part of the actual structure. In particular, each drawing needs to show different emphases, and sometimes different scales are used.

Example 1

FIG. 1 is a schematic structural diagram of a thin film metal resistor in Embodiment 1 of the present invention; as shown in FIG. 1 , a thin film metal resistor of this embodiment includes a substrate 1, a metal layer 2A and a dielectric layer sequentially arranged on the substrate 3.

Wherein, the substrate 1 may include semiconductor compounds, insulating materials, conductor materials or any combination thereof, may be a single-layer structure, or may include a multi-layer structure. Thus, the substrate may be a semiconductor material such as Si, SiGe, SiGeC, SiC, GaAs, InAs, InP and other III/V or II/VI compound semiconductors. Layered substrates such as, for example, Si/SiGe, Si/SiC, silicon on insulator (SOI), or silicon germanium on insulator may also be included.

Continuing to refer to FIG. 1 , in this embodiment, the metal layer 2A has protrusions, and the thin film metal resistor also has a connection hole 4 corresponding to the position of the protrusion, and the connection hole 4 penetrates through the dielectric layer 3 and into the bulge. In the thin film metal resistor of the present embodiment, the metal layer 2A has protrusions, and the protrusions increase the thickness of the portion of the metal layer 2A corresponding to the connection holes 4 . Therefore, when the connection holes 4 are formed by etching, the connection holes 4 can be extended into the protrusions without further etching through the metal layer 2A, thereby avoiding the connection between the connection electrodes 5 disposed in the connection holes 4 and the metal layer 2A. It can effectively improve the performance of thin film metal resistors.

In a specific embodiment, it can be considered that the metal layer 2A has a first portion 21A and a second portion 22A, and the second portion 22A protrudes in a direction away from the substrate relative to the first portion 21A to form the bulge.

In this embodiment, there are two protrusions, and there are also two corresponding connection holes 4 and connection electrodes located in the connection holes 4 . Among them, one of the two connecting electrodes 5 is an anode, and one of them is a cathode, and the thin film metal resistor is communicated with the metal connecting line in the semiconductor through the connecting electrode 5 . In other embodiments, the number of protrusions may also be four, and the four connecting electrodes are grouped in pairs, one group is used to measure the voltage of the thin film metal resistance, and the other group is used to measure the current of the thin film metal resistance. Of course, in other embodiments, the number of the connection holes 4 , the connection electrodes 5 and the protrusions may also be other numbers, which are not specifically limited here.

The dielectric layer 3 in this embodiment may include an organic or inorganic dielectric, or the dielectric layer 3 may be formed by combining a porogen and a dielectric precursor to form a precipitation, and then removing the porogen by heat treatment to form a dielectric layer 3 . connection hole 4. The dielectric layer 3 can also be made of materials such as SiO2 oxide, silicon nitride, or doped oxide containing Si, C, O, and H atoms. After the dielectric layer 3 is formed by precipitation, the connection holes 4 are formed by an etching process.

Further, a connection electrode 5 is provided in the connection hole 4, and the connection electrode 5 is used to connect with the metal layer 2A. The material of the connection electrode 5 can be selected from metals such as aluminum, copper, and tungsten, and metal conductors with electrical conductivity such as alloys and their alloys, or one or several combinations thereof.

1 , in this embodiment, the metal layer 2A includes a metal pad layer 23A and a metal thin film layer 24A, the metal pad layer 23A is formed on the substrate 1 , and the metal thin film layer 24A covers the top surface of the substrate 1 , and also covers the top surface and sidewalls of the metal pad layer 23A. The part of the metal thin film layer 24A covering the top surface of the substrate 1 constitutes the first part 21A, and the part of the metal thin film layer 24A covering the metal pad layer 23A and the metal pad layer 23A constitute the second part 22A. That is, in this embodiment, the protrusions for forming the second portion 22A are formed by the metal pad layer 23 and part of the metal thin film layer 24, so that the second portion 22A is farther from the substrate 1 than the first portion 21A direction protruding.

该金属薄膜层24A的厚度可以为

连接孔4伸入金属层2A的距离例如为

在上述厚度及连接孔4伸入金属层2A的距离范围内连接电极5与金属层2A正常连接且连接孔4不贯穿金属层2A。在其他实施例中，第一部分21A及第二部分22A的厚度及连接孔4伸入金属层2A的距离也可以为其他值，不做具体限定。In addition, in this embodiment, the thickness of the metal pad layer 23A may be

The thickness of the metal thin film layer 24A can be

The distance that the connection hole 4 extends into the metal layer 2A is, for example,

Within the range of the above thickness and the distance that the connection hole 4 extends into the metal layer 2A, the connection electrode 5 is normally connected to the metal layer 2A and the connection hole 4 does not penetrate the metal layer 2A. In other embodiments, the thicknesses of the first portion 21A and the second portion 22A and the distance that the connection hole 4 extends into the metal layer 2A may also be other values, which are not specifically limited.

Further, the metal pad layer 23A and the metal thin film layer 24A may be formed of different materials. For example, the materials of the metal pad layer 23A and the metal thin film layer 24A may include titanium, tantalum, titanium nitride and nitrogen. One or several mixtures of titanium compounds. When the materials of the metal pad layer 23A and the metal thin film layer 24A are different, the performance of the metal layer 2A can be improved by a combination of different materials. When the metal layer 2A includes the metal cushion layer 23A and the metal thin film layer 24A, the connection effect is good and the manufacturing precision is high, and the formed thin film metal resistance has good performance.

In other embodiments, the materials of the metal pad layer 23A and the metal thin film layer 24A are the same, for example, the materials of the metal pad layer 23A and the metal thin film layer 24A can be one of titanium, tantalum, titanium nitride and titanium nitride species or a mixture of several.

And, in the process of manufacturing the thin film metal resistor, a metal pad layer 23A can be formed on the substrate 1 first, and then a metal thin film layer 24A can be deposited on the metal pad layer 23A.

5 is a flowchart of a method for manufacturing a thin-film metal resistor according to Embodiment 1 of the present invention; FIGS. 6a to 6f are schematic diagrams of a process for manufacturing a thin-film metal resistor in Embodiment 1 of the present invention; for details, please refer to FIGS. 5 to 5 6f, the preparation method of the thin film metal resistor of this embodiment may include the following steps.

In step S10: the substrate 1 is provided.

In step S20: a metal layer 2A is formed on the substrate 1, and the metal layer 2A has protrusions.

Specifically, as shown in FIGS. 6 a to 6 c , the method for forming a metal layer 2A on the substrate 1 , and the metal layer 2A having protrusions includes the following steps S21 to S25 .

In step S21, as shown in FIG. 6a, a first metal layer 230 is formed on the substrate 1. The first metal layer 230 can be formed by a metal sputtering method, and the material of the first metal layer 230 can be titanium. , Tantalum, Titanium Nitride and Titanium Nitride one or more mixtures.

In step S22 , continuing to refer to FIG. 6 a , the first mask layer 101 is formed on the first metal layer 230 . The method for forming the first mask layer 101 may include: plating a first mask material layer on the first metal layer 230 , and then using a mask to expose and develop the first mask layer 101 . The first mask material layer may be a positive photoresist or a negative photoresist. In this embodiment, a negative photoresist is used, that is, when developing after exposure, the exposed part remains and the unexposed part is not exposed. Decomposed by the developer.

In step S22 : as shown in FIGS. 6 a and 6 b , using the first mask layer 101 as a mask, the first metal layer 230 is etched to form a metal pad layer 23A.

In this step, dry etching can be used for etching, and the thickness of the formed metal pad layer 23A is

In this embodiment, after forming the metal pad layer 23A, the method further includes: bombarding the surface of the metal pad layer 23A with ions to roughen the surface of the metal pad layer 23A. In this way, the metal thin film layer 24A subsequently formed on the surface of the metal pad layer 23A and the metal pad layer 23A have greater adhesion strength.

In step S23: as shown in FIG. 6b, the first mask layer 101 is removed.

In step S24: as shown in FIG. 6C, a metal thin film layer 24A is formed, wherein the metal thin film layer 24A covers the top surface of the substrate 1, and also covers the top surface and sidewalls of the metal pad layer 23A. In the metal thin film layer 24A The portion covering the metal pad layer 23A and the metal pad layer 23A constitute the protrusions.

As mentioned above, the surface of the metal pad layer 23A is rough, so when the metal thin film layer 24A is formed on the metal pad layer 23A, it is beneficial to improve the adhesion between the metal thin film layer 24A and the metal pad layer 23A adhesion.

In this step, the metal thin film layer 24A may be formed by metal sputtering, and the material of the first metal layer 230 may be one or a mixture of titanium, tantalum, titanium nitride, and titanium nitride. The material of the metal pad layer 23A may be the same or different, which is not specifically limited here. In addition, in this embodiment, the thickness of the metal thin film layer 24A is

In addition, if a resistor with a larger resistance value needs to be formed, oxygen gas can also be introduced during the formation of the first metal layer 230 and/or the metal thin film layer 24A to increase the resistance value of the metal layer 2A.

In step S30: as shown in FIG. 6d, a dielectric layer 3 is formed on the surface of the metal layer 2A away from the substrate 1;

The dielectric layer 3 may include organic or inorganic media, such as SiO2 oxide, silicon nitride, or doped oxide containing Si, C, O, and H atoms. The film is formed by coating methods such as PVD and CVD, and the specific film formation method is not specifically limited here.

In step S40: the dielectric layer 3 and the metal layer 2A are sequentially etched to form connection holes 4 corresponding to the positions of the protrusions, and the connection holes 4 penetrate through the dielectric layer 3 and extend into the protrusions.

Specifically, the method for forming the connection hole 4 includes, for example: first, as shown in FIG. 6d , forming a second mask layer 102 on the dielectric layer 3 , and the method for forming the second mask layer 102 may include forming the second mask layer 102 on the dielectric layer 3 A second mask material layer is formed thereon, and a second mask layer 102 is formed after steps such as exposure and display; then, as shown in FIG. 6e, after the second mask layer 102 is formed, an etching process is performed to sequentially etch The dielectric layer 3 and the metal layer 2A, and the etching stops in the metal layer 2A to form the connection hole 4 . The distance that the connection hole 4 extends into the metal layer 2A is

It should be noted that, in this embodiment, when the connection hole 4 is formed, the etching process is etched into the metal layer 2A. At this time, since the metal layer 2A has a thicker protrusion, it is possible to avoid the The problem is that the connection holes 4 are formed by etching and pass through the metal layer 2A at all times.

In step S50 , a conductive material is filled in the connection hole 4 to form the connection electrode 5 .

As shown in FIG. 6f , in this step, the material of the connecting electrode 5 can be the same as that of the metal layer 2A, or different from the material of the metal layer 2A, and metals such as aluminum, copper, tungsten and their alloys can be selected to have electrical conductivity such as metal conductors One or more combinations of compounds and compounds thereof are not specifically limited here, and metals with good electrical conductivity or metal compounds thereof are preferred.

In addition, in order to ensure the adhesion strength of the connection electrode 5 to the metal layer 2A and the dielectric layer 3, after the connection hole 4 is formed, ion bombardment can be used to bombard the surfaces of the metal layer 2A and the dielectric layer 3 exposed in the connection hole 4, so as to The surface roughness of the metal layer 2A and the dielectric layer 3 is enhanced, thereby enhancing the firmness of the connection electrode 5 disposed in the connection hole 4 with the dielectric layer 3 and the metal layer 2A. In addition, this step may be performed after the connection hole 4 is formed, or may be performed after other semiconductor steps are performed, which is not specifically limited, and is subject to the actual situation.

Embodiment 2

2 is a schematic structural diagram of a thin film metal resistor according to Embodiment 2 of the present invention; the difference from Embodiment 1 above is that in this embodiment, the first part 21B and the second part 22B of the metal layer 2B are made of the same material and are integrally formed.

2 , in this embodiment, the metal layer 2B has a first portion 21B and a second portion 22B, wherein the second portion 22B protrudes in a direction away from the substrate 1 relative to the first portion 21B to form the protrusion, and the first portion 22B protrudes away from the substrate 1 relative to the first portion 21B. A part of 21B is a planar structure. In this embodiment, the first part 21B and the second part 22B of the metal layer 2B are formed at the same time, and a metal film can be formed on the substrate 1 through a metal plating process, and then the metal film can be etched through an etching process to form protrusions . When the first portion 21B and the second portion 22B in the metal layer 2B are simultaneously formed, the manufacturing process is simple. In this embodiment, the first part 21B and the second part 22B are made of the same material, which may be one or a mixture of titanium, tantalum, titanium nitride and titanium nitride.

以用于保障金属电阻的电阻值。以及，所述第二部分22B的厚度例如为

连接孔4伸入金属层2B的距离例如为

在上述厚度及连接孔4伸入金属层2A的距离范围内接电极5与金属层2A正常连接且连接孔4不贯穿金属层2A。在其他实施例中，第一部分21B及第二部分22B厚度及连接孔4伸入金属层2B的距离也可以为其他值，不做具体限定。In this embodiment, the thickness of the first portion 21B is, for example,

In order to guarantee the resistance value of the metal resistance. And, the thickness of the second part 22B is, for example,

The distance that the connection hole 4 extends into the metal layer 2B is, for example,

Within the range of the above thickness and the distance that the connecting hole 4 extends into the metal layer 2A, the connecting electrode 5 is normally connected to the metal layer 2A and the connecting hole 4 does not penetrate the metal layer 2A. In other embodiments, the thickness of the first part 21B and the second part 22B and the distance of the connection hole 4 extending into the metal layer 2B may also be other values, which are not specifically limited.

The process of forming the metal layer 2B of the metal thin film electronics in this embodiment may be as follows: forming a metal material layer on the substrate 1, and removing part of the metal material layer by mask etching to form a metal material layer with an orientation as shown in FIG. 2 . The metal layer 2B of the convex body protruding in the direction away from the substrate 1 .

7a-7b are partial process schematic diagrams of the manufacturing method of the thin film metal resistor according to the second embodiment of the present invention; as shown in FIGS. 7a-7b, the metal layer 2B can also be formed by the method shown in the figure.

Step 1: As shown in FIG. 7a, a metal material layer 200 is formed on the substrate 1. In this step, the metal material layer 200 is formed by metal sputtering. The material of the metal material layer 200 can be titanium, tantalum , titanium nitride and one or more mixtures of titanium nitride.

And, as shown in FIG. 7a, after the metal material layer 200 is formed, a third mask layer 103 is formed on the metal material layer 200, and the third mask layer 103 has an opening A therein.

Specifically, the method for forming the third mask layer 103 may include: plating a third mask material layer on the metal material layer 200 , and then using a mask to expose and develop the third mask material layer to form a third mask layer. mask layer 103 . The third mask material layer may be a positive photoresist or a negative photoresist. In this embodiment, a negative photoresist is used, that is, when developing after exposure, the exposed part remains and the unexposed part is not exposed. Decomposed by the developer.

Step 2: As shown in FIG. 7b, using the third mask layer 103 as a mask, partially remove the part of the metal material layer 200 corresponding to the opening A to form a metal layer 2B, and use the metal material layer The portion of 200 not corresponding to the opening A constitutes the protrusion of the metal layer 2B.

Specifically, as shown in FIG. 7b, the metal material layer may be etched by dry etching to form the metal layer 2B.

Embodiment 3

The difference from the second embodiment above is that in this embodiment, the first portion 21C of the metal layer 2C protrudes toward the substrate relative to the second portion 22C.

Specifically, FIG. 3 is a schematic structural diagram of a thin film metal resistor according to Embodiment 3 of the present invention; as shown in FIG. 3 , in the thin film metal resistor in this embodiment, the metal layer 2C has a first part 21C and a second part 22C, the first part 21C and the second part 22C. A portion 21C protrudes in the direction toward the substrate 1 to constitute a protrusion.

Further, in this embodiment, a support layer 6 is also formed on the substrate 1, and the support layer 6 is formed on the periphery of the protrusion, so as to use the support layer 6 to support the first part 21C of the metal layer 2C, so that The bottom surface of the first portion 21C is higher than the bottom surface of the protrusion, so that the protrusion extends toward the substrate.

The material of the support layer 6 can be organic or inorganic, such as SiO2 oxide, silicon nitride or doped oxide containing Si, C, O and H atoms, or some other organic materials, which are not mentioned here. To make a specific limitation, the material may be the same as that of the dielectric layer 3, or may be different.

Further, the method for preparing the metal layer in this embodiment may include: firstly, forming a support layer 6 on the substrate 1 with grooves formed in the support layer 6, and then forming a metal layer 2C, the metal The layer 2C fills the grooves and covers the top surface of the support layer 6, and the portion filled in the grooves constitutes the protrusions.

Embodiment 4

The difference from the third embodiment is that, in this embodiment, the protrusions of the metal layer 2D are formed by using the metal pad layer 22D.

4 is a schematic structural diagram of a thin film metal resistor according to Embodiment 4 of the present invention; specifically, as shown in FIG. 4 , the metal layer 2D includes a metal pad layer 23B and a metal thin film layer 24B, wherein the metal pad layer 23B is formed on the substrate 1 , and on the periphery of the metal pad layer 23B, a support layer 6 is formed, the support layer 6 covers the sidewalls of the metal pad layer 23B, and the metal thin film layer 24B covers the top surface of the metal pad layer 23B and the support layer 6 . The portion of the metal thin film layer 24B covering the metal pad layer 23B and the metal pad layer 23B form the second portion 22D, and the portion of the metal thin film layer 23B covering the support layer 6 forms the first portion 21D. That is, in this embodiment, the metal thin film layer 24B may be a planar structure and be laid flat on the metal cushion layer 23B and the support layer 6 .

该金属薄膜层24B的厚度可以为

In addition, in this embodiment, the thickness of the metal pad layer 23B can be

The thickness of the metal thin film layer 24B can be

Further, the metal pad layer 23B and the metal thin film layer 24B may be formed of different materials. For example, the materials of the metal pad layer 23B and the metal thin film layer 24B may include titanium, tantalum, titanium nitride and nitrogen. One or several mixtures of titanium compounds. When the materials of the metal pad layer 23B and the metal thin film layer 24B are different, the performance of the metal layer 2D can be improved by a combination of different materials. When the metal layer 2D includes the metal cushion layer 23B and the metal thin film layer 24B, the connection effect is good and the manufacturing precision is high, and the formed thin film metal resistance has good performance.

In other embodiments, the material of the metal pad layer 23B and the metal thin film layer 24B are the same, for example, the material of the metal pad layer 23B and the metal thin film layer 24B can be one of titanium, tantalum, titanium nitride and titanium nitride species or a mixture of several.

Wherein, the method for manufacturing the thin film metal resistor may include: firstly forming a support layer 6 on the substrate 1, and a groove is formed in the support layer 6; then, filling the metal pad layer 23B in the groove , and the top surface of the metal pad layer 23B and the top surface of the support layer 6 can be flush; then, a metal thin film layer 24B is formed on the surface of the support layer 6 and the metal pad layer 23B away from the substrate 1 .

8a-8b are partial process schematic diagrams of the manufacturing method of the thin film metal resistor according to the third embodiment of the present invention. As shown in FIGS. 8 a to 8 b , the preparation method of the thin film metal resistor of this embodiment may include the following steps.

Step 1: As shown in FIG. 8a, a support layer 6 and a metal pad layer 23B are formed on the substrate 1, and the support layer 6 is located at the periphery of the metal pad layer 23B and covers the sidewall of the metal pad layer 23B.

Specifically, in this embodiment, the method for forming the supporting layer 6 may include: forming a supporting material layer on the substrate 1, etching the supporting material layer to form the supporting layer 6, and forming a groove in the supporting layer 6, The groove is filled with metal material to form the metal pad layer 23B.

In this embodiment, the material of the support layer 6 can be an organic or inorganic material, such as SiO2 oxide, silicon nitride or doped oxide containing Si, C, O and H atoms, or some other organic materials , which is not specifically limited here, and the material may be the same as that of the dielectric layer 3 or may be different.

In addition, the metal pad layer 23B may be formed first, and then the support layer 6 may be formed in the space between the metal pad layers 23B. The specific formation sequence is not limited here, and the actual situation prevails.

Step 2: As shown in FIG. 8b, a metal thin film layer 24B is formed on the support layer 6 and the metal pad layer 23B.

In this step, the metal thin film layer 24 can be formed by a metal sputtering method, and the material of the metal thin film layer 24B can be one or a mixture of titanium, tantalum, titanium nitride and titanium nitride. The material of the metal pad layer 23B may be the same or different, which is not specifically limited here. In addition, in this embodiment, the thickness of the metal thin film layer 24B is

In addition, if a resistor with a larger resistance value needs to be formed, oxygen gas can also be introduced during the formation of the metal pad layer 23B and/or the metal thin film layer 24B to increase the resistance value of the metal layer 2D. At the same time, in order to ensure the adhesion strength between the metal cushion layer 23B and the metal thin film layer 24B, after the metal cushion layer 23B is formed, ions can also be used to bombard the surface of the metal cushion layer 23B to roughen the surface of the metal cushion layer 23B, and then The adhesion between the metal cushion layer 23B and the metal thin film layer 24B is enhanced.

It should be noted that the various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments, and the same and similar parts between the various embodiments can be referred to each other. , the different parts of each embodiment can also be used in combination with each other, which is not limited in the present invention.

The above description is only a description of the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention. Any changes and modifications made by those of ordinary skill in the field of the present invention based on the above disclosure all belong to the protection scope of the claims.

Claims (14)

1. A thin-film metal resistor, characterized in that it comprises a substrate, a metal layer and a dielectric layer that are sequentially arranged on the substrate, the metal layer has protrusions, and the thin-film metal resistor also has a A connection hole corresponding to the position of the protrusion, the connection hole penetrates the dielectric layer and extends into the protrusion, and a connection electrode is arranged in the connection hole, and the connection electrode is used for connecting with the metal layer . 2 . The thin film metal resistor of claim 1 , wherein the metal layer has a first portion and a second portion, and the second portion protrudes in a direction away from the substrate relative to the first portion. 3 . to form the bulge. 3. The thin film metal resistor according to claim 2, wherein the metal layer comprises a metal pad layer and a metal thin film layer, the metal pad layer is formed on the substrate, and the metal thin film layer covers on the top surface of the substrate, and also cover the top surface and sidewalls of the metal pad layer, wherein the part of the metal thin film layer covering the top surface of the substrate constitutes the first part, and the metal thin film layer The portion covering the metal underlayer and the metal underlayer constitute the second portion. 4 . The thin film metal resistor of claim 1 , wherein the metal layer has a first portion and a second portion, and the second portion protrudes in a direction toward the substrate relative to the first portion. 5 . , to form the bulge. 5 . The thin film metal resistor according to claim 4 , wherein the metal layer comprises a metal pad layer and a metal thin film layer, the metal pad layer is formed on the substrate, and the metal pad layer is formed on the metal pad layer. 6 . A support layer is also formed on the periphery of the metal pad, the support layer covers the sidewall of the metal cushion layer, and the metal thin film layer covers the top surface of the metal cushion layer and the support layer. 6. The thin film metal resistor according to claim 2 or 4, wherein the first part is a planar structure. 7. The thin film metal resistor according to claim 2 or 4, wherein the thickness of the first part is

The thickness of the second part is

8 . The thin film metal resistor according to claim 1 , wherein the distance that the connection hole extends into the metal layer is 8 .

9. The thin film metal resistor according to claim 2 or 4, wherein the material of the first part and the second part is one or more of titanium, tantalum, titanium nitride and titanium nitride mix. 10. A method for manufacturing a thin film metal resistor, comprising: provide a substrate; forming a metal layer on the substrate, the metal layer having protrusions; forming a dielectric layer on the metal layer; etching the dielectric layer and the metal layer in sequence to form connection holes corresponding to the positions of the protrusions, the connection holes penetrating the dielectric layer and extending into the protrusions; A conductive material is filled in the connection holes to form connection electrodes. 11. The method for manufacturing a thin film metal resistor according to claim 10, wherein the method for forming the metal layer comprises: forming a first metal layer on the substrate; forming a first mask layer on the first metal layer; Using the first mask layer mask, etching the first metal layer to form a metal pad layer; removing the first mask layer; A metal thin film layer is formed, the metal thin film layer covers the top surface of the substrate, and also covers the top surface and sidewalls of the metal pad layer, and the part of the metal thin film layer covering the metal pad layer and all The metal cushion layer constitutes the protrusion. 12. The method for manufacturing a thin film metal resistor according to claim 10, wherein the method for forming the metal layer comprises: forming the metal material layer on the substrate; forming a third mask layer on the metal material layer, an opening is formed in the third mask layer; Using the third mask layer as a mask to partially remove the part of the metal material layer corresponding to the opening to form the metal layer, and use the part of the metal material layer that does not correspond to the opening the protrusions constituting the metal layer; The third mask layer is removed. 13. The method for manufacturing a thin film metal resistor according to claim 10, wherein the method for forming the metal layer comprises: forming a support layer and a metal cushion layer on the substrate, the support layer is located at the periphery of the metal cushion layer and covers the sidewall of the metal cushion layer; A metal thin film layer is formed on the support layer and the metal pad layer. 14 . The method for manufacturing a thin film metal resistor according to claim 10 , wherein oxygen gas is introduced while forming the metal layer on the substrate to increase the resistance value of the metal layer. 15 .

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