CN111613688A - An interdigitated back-contact solar cell structure and its manufacturing method - Google Patents
An interdigitated back-contact solar cell structure and its manufacturing method Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 85
- 238000002161 passivation Methods 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 22
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052796 boron Inorganic materials 0.000 claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 11
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 11
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000011574 phosphorus Substances 0.000 claims abstract description 7
- 229910004205 SiNX Inorganic materials 0.000 claims abstract 6
- 229910052681 coesite Inorganic materials 0.000 claims abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract 2
- 229910052682 stishovite Inorganic materials 0.000 claims abstract 2
- 229910052905 tridymite Inorganic materials 0.000 claims abstract 2
- 238000009792 diffusion process Methods 0.000 claims description 32
- 238000005245 sintering Methods 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 230000006798 recombination Effects 0.000 abstract description 7
- 238000005215 recombination Methods 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 238000007667 floating Methods 0.000 abstract description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- 241000282414 Homo sapiens Species 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
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Abstract
本专利提供了一种叉指型背接触太阳电池结构及其制造方法，包括N型单晶硅片为基体，所述单晶硅片前表面设置有硼掺杂层，所述单晶硅片前表面硼掺杂层上设置有AL2O3钝化层，在所述单晶硅片前表面AL2O3钝化层上设置有SiNx减反射层；所述单晶硅片背表面场为磷掺杂层，所述单晶硅片背面发射极为硼掺杂层，所述单晶硅片背表面设置有SiO2钝化层，所述单晶硅片背面发射极表面设置有AL2O3钝化层，所述单晶硅片背面场表面设置有SiNx钝化层，电池前表面采用FFE浮动结结构在有效降低表面载流子复合的同时可提供背表面场的宽度比例，降低工艺难度；可有效降低电池正反面的少子复合率，进而提升电池转换效率。
This patent provides an interdigitated back-contact solar cell structure and a manufacturing method thereof, comprising an N-type single crystal silicon wafer as a substrate, a boron doped layer on the front surface of the single crystal silicon wafer, and a boron doped layer on the front surface of the single crystal silicon wafer. An AL2O3 passivation layer is arranged on the boron doped layer on the front surface, and a SiNx antireflection layer is arranged on the AL2O3 passivation layer on the front surface of the single crystal silicon wafer; the back surface field of the single crystal silicon wafer is a phosphorus doped layer, The backside emitter of the single crystal silicon wafer is a boron doped layer, the back surface of the single crystal silicon wafer is provided with a SiO2 passivation layer, the backside emitter surface of the single crystal silicon wafer is provided with an AL2O3 passivation layer, and the single crystal silicon wafer is provided with an AL2O3 passivation layer on the back surface. The SiNx passivation layer is arranged on the surface of the back surface of the silicon wafer, and the FFE floating junction structure is used on the front surface of the battery, which can effectively reduce the surface carrier recombination and provide the width ratio of the back surface field, reducing the difficulty of the process; it can effectively reduce the front and back of the battery. Minor carrier recombination rate, thereby improving the battery conversion efficiency.
Description
技术领域technical field
本发明涉及太阳能电池领域，特别是叉指型背接触太阳电池。The present invention relates to the field of solar cells, in particular to interdigitated back-contact solar cells.
背景技术Background technique
太阳能是一种清洁的可再生的能源，取之不尽，用之不竭。开发和利用太阳能，对环境的污染小，能为人类提供充足的能量，亦不会影响自然界的生态平衡，相对于其他新能源如风能、地热能、生物能和潮汐能等，太阳能以可利用率高、资源分布广泛和使用安全可靠等诸多优点，成为最具有发展前景的能源之一。Solar energy is a clean and renewable energy source that is inexhaustible and inexhaustible. The development and utilization of solar energy has little pollution to the environment, can provide sufficient energy for human beings, and will not affect the ecological balance of nature. Compared with other new energy sources such as wind energy, geothermal energy, biological energy and tidal energy, solar energy can be used in It has many advantages such as high rate, wide distribution of resources and safe and reliable use, making it one of the most promising energy sources.
目前硅太阳电池是发展最成熟的，也占据市场的主导地位。现今单晶硅太阳电池因材料纯度较高，晶体缺陷密度低，可用于高效太阳能电池的研究和试制，能获得较高的转换效率，技术也最为成熟，而且也取得了很好的应用，N型IBC(Interdigitated BackContact)太阳电池以n型单晶硅为衬底，p-n结和金属电极全部以叉指形状置于电池背面，正面没有电极遮光，并且通过表面制绒和增加减反射层来提高电池对光的吸收，获得了非常高的短路电流和光电转换效率。At present, silicon solar cells are the most mature and occupy a dominant position in the market. Nowadays, single-crystal silicon solar cells can be used in the research and trial production of high-efficiency solar cells due to their high material purity and low crystal defect density, and can obtain high conversion efficiency. The technology is also the most mature, and it has also achieved good applications. N Type IBC (Interdigitated BackContact) solar cells use n-type single crystal silicon as the substrate, p-n junctions and metal electrodes are all placed on the back of the cell in an interdigitated shape, and there is no electrode shading on the front side. The absorption of light by the battery achieves very high short-circuit current and photoelectric conversion efficiency.
对于背接触太阳电池，由于P+和N+掺杂区域均放置在电池背面，当前表面采用前表面场钝化(FSF)时，这种结构对电池背面P区和N区的尺寸比例要求较高，P区应适当宽一点，而N区应尽可能的窄，N区越窄，工艺难度越大。并且对于不同类型的掺杂层，其表面的钝化方式也不同。For back-contact solar cells, since both the P+ and N+ doped regions are placed on the back of the cell, when the front surface uses front surface field passivation (FSF), this structure requires a higher size ratio of the P and N regions on the back of the cell. The P region should be appropriately wider, while the N region should be as narrow as possible. The narrower the N region, the greater the difficulty in the process. And for different types of doped layers, the surface passivation methods are also different.
因此，本发明的主要目的在于解决电池背表面场宽度较窄导致的工艺难度增加以及电池背面复合较大等问题。Therefore, the main purpose of the present invention is to solve the problems of increased process difficulty caused by the narrow field width of the back surface of the battery and large recombination of the back surface of the battery.
发明内容SUMMARY OF THE INVENTION
本发明提供了一种叉指型背接触太阳电池结构及其制造方法，解决了降低工艺难度，并且对于不同类型的掺杂层，根据钝化材料所带电荷的正负性对电池背面进行钝化可改善背面的钝化性能，提高电池效率。The present invention provides an interdigitated back-contact solar cell structure and a manufacturing method thereof, which solves the problem of reducing the difficulty of the process, and for different types of doped layers, the backside of the cell is passivated according to the positive and negative charges of the passivation material. The passivation can improve the passivation performance of the backside and improve the cell efficiency.
一种叉指型背接触太阳电池结构，包括N型单晶硅片为基体，所述单晶硅片前表面设置有硼掺杂层，所述单晶硅片前表面硼掺杂层上设置有AL2O3钝化层，在所述单晶硅片前表面AL2O3钝化层上设置有SiNx减反射层；所述单晶硅片背表面场为磷掺杂层，所述单晶硅片背面发射极为硼掺杂层，所述单晶硅片背表面设置有SiO2钝化层，所述单晶硅片背面发射极表面设置有AL2O3钝化层，所述单晶硅片背面场表面设置有SiNx钝化层，所述单晶硅片背面发射极连接有负电级，所述单晶硅片背面场连接有正电极。An interdigitated back-contact solar cell structure comprises an N-type single crystal silicon wafer as a substrate, a boron doped layer is arranged on the front surface of the single crystal silicon wafer, and a boron doped layer is arranged on the front surface of the single crystal silicon wafer There is an AL2O3 passivation layer, and a SiNx anti-reflection layer is arranged on the AL2O3 passivation layer on the front surface of the single crystal silicon wafer; the back surface field of the single crystal silicon wafer is a phosphorus-doped layer, and the back surface of the single crystal silicon wafer emits Extremely boron doped layer, the back surface of the single crystal silicon wafer is provided with a SiO2 passivation layer, the emitter surface of the back surface of the single crystal silicon wafer is provided with an AL2O3 passivation layer, and the back surface of the single crystal silicon wafer is provided with SiNx A passivation layer, a negative electrode is connected to the backside emitter of the single crystal silicon wafer, and a positive electrode is connected to the backside field of the single crystal silicon wafer.
优选的，所述N型单晶硅片基体的电阻率为1-10Ω·cm。Preferably, the resistivity of the N-type single crystal silicon wafer substrate is 1-10 Ω·cm.
优选的，所述单晶硅片前表面硼掺杂层的方阻为80-160Ω·cm，结深为0.1-0.5μm。Preferably, the square resistance of the boron-doped layer on the front surface of the single crystal silicon wafer is 80-160 Ω·cm, and the junction depth is 0.1-0.5 μm.
优选的，所述单晶硅片前表面AL2O3钝化层膜厚为1-10nm。Preferably, the thickness of the AL2O3 passivation layer on the front surface of the single crystal silicon wafer is 1-10 nm.
优选的，所述单晶硅片前表面SiNx减反射层膜厚为40-80nm，折射率为1.8-2.5。Preferably, the film thickness of the SiNx anti-reflection layer on the front surface of the single crystal silicon wafer is 40-80 nm, and the refractive index is 1.8-2.5.
优选的，所述单晶硅片背表面场磷掺杂层的方阻为80-160Ω·cm，结深为0.1-0.5μm。Preferably, the square resistance of the field phosphorus doped layer on the back surface of the single crystal silicon wafer is 80-160 Ω·cm, and the junction depth is 0.1-0.5 μm.
优选的，所述单晶硅片背表面SiO2钝化层厚度为1-5nm。Preferably, the thickness of the SiO2 passivation layer on the back surface of the single crystal silicon wafer is 1-5 nm.
优选的，所述单晶硅片背面发射极表面AL2O3钝化层膜厚为1-10nm。Preferably, the thickness of the AL2O3 passivation layer on the surface of the backside emitter of the single crystal silicon wafer is 1-10nm.
优选的，所述单晶硅片背面场表面SiNx钝化层膜厚为40-80nm。Preferably, the thickness of the SiNx passivation layer on the back surface of the single crystal silicon wafer is 40-80 nm.
优选的，所述负电级宽度为300-1600μm。Preferably, the width of the negative electrode is 300-1600 μm.
优选的，所述正电极宽度为100-700μm。Preferably, the width of the positive electrode is 100-700 μm.
一种叉指型背接触太阳电池的制造方法，A method for manufacturing an interdigitated back-contact solar cell,
S1、选择N型单晶硅片作为基体，并进行双面制绒处理；S1. Select N-type monocrystalline silicon wafer as the substrate, and carry out double-sided texturing treatment;
S2、对N型单晶硅片进行双面硼扩散；S2, carry out double-sided boron diffusion on the N-type single crystal silicon wafer;
S3、在N型单晶硅片双面沉积AL2O3薄膜；S3, depositing an AL2O3 film on both sides of an N-type single crystal silicon wafer;
S4、对N型单晶硅片背表面N型BSF区域进行开槽；S4, grooving the N-type BSF region on the back surface of the N-type single crystal silicon wafer;
S5、对N型单晶硅片进行单面磷扩散形成N型单晶硅片背表面场；S5, performing single-sided phosphorus diffusion on the N-type single crystal silicon wafer to form a back surface field of the N-type single crystal silicon wafer;
S6、在N型单晶硅片正反面沉积氮化硅膜；S6, depositing a silicon nitride film on the front and back sides of the N-type single crystal silicon wafer;
S7、对硅片进行丝网印刷银浆和铝浆形成正负电极；S7, screen printing silver paste and aluminum paste on the silicon wafer to form positive and negative electrodes;
S8、进行烧结，最终得到IBC电池。S8, sintering to finally obtain an IBC battery.
优选的，S1中所述N型单晶硅片基体的厚度为140-180μm，电阻率为1-10Ω·cm。Preferably, the thickness of the N-type single crystal silicon wafer substrate in S1 is 140-180 μm, and the resistivity is 1-10 Ω·cm.
优选的，S2使用低压高温扩散炉对所述N型单晶硅片进行双面硼扩散，扩散温度为800-1100℃，扩散时间为10-50分钟，扩散后P+掺杂层的方块电阻为80-160Ω·cm，结深为0.1-0.5μm。Preferably, S2 uses a low-pressure high-temperature diffusion furnace to perform double-sided boron diffusion on the N-type single crystal silicon wafer, the diffusion temperature is 800-1100° C., the diffusion time is 10-50 minutes, and the sheet resistance of the P+ doped layer after diffusion is 80-160Ω·cm, junction depth of 0.1-0.5μm.
优选的，S3使用ALD设备在所述N型单晶硅片双面沉积AL2O3薄膜，薄膜厚度为1-10nm。Preferably, S3 uses ALD equipment to deposit an AL2O3 film on both sides of the N-type single crystal silicon wafer, and the film thickness is 1-10 nm.
优选的，S4使用激光开槽设备对所述N型单晶硅片背表面N型BSF区域进行开槽。Preferably, S4 uses laser grooving equipment to groov the N-type BSF region on the back surface of the N-type single crystal silicon wafer.
优选的，S5使用掩膜工艺在激光开槽区域使用低压高温扩散炉对所述N型单晶硅片进行单面磷扩散形成背表面场，扩散温度为800-1100℃，扩散时间为10-50分钟，扩散后N+掺杂层的方块电阻为80-160Ω·cm，结深为0.1-0.5μm。Preferably, S5 uses a mask process to perform single-sided phosphorous diffusion on the N-type single crystal silicon wafer in the laser grooved area using a low-pressure high-temperature diffusion furnace to form a back surface field, the diffusion temperature is 800-1100° C., and the diffusion time is 10- After 50 minutes, the sheet resistance of the N+ doped layer after diffusion was 80-160 Ω·cm, and the junction depth was 0.1-0.5 μm.
优选的，S6使用PECVD设备在硅片正反面沉积氮化硅膜，膜厚为40-80nm，折射率为1.8-2.5。Preferably, S6 uses PECVD equipment to deposit a silicon nitride film on the front and back sides of the silicon wafer, the film thickness is 40-80 nm, and the refractive index is 1.8-2.5.
优选的，S8为放入烧结炉进行烧结，烧结温度为700-1000℃。Preferably, S8 is put into a sintering furnace for sintering, and the sintering temperature is 700-1000°C.
本发明与现有技术相比存在以下优点和积极效果：Compared with the prior art, the present invention has the following advantages and positive effects:
1、电池前表面采用FFE浮动结结构在有效降低表面载流子复合的同时可提供背表面场的宽度比例，降低工艺难度。1. The FFE floating junction structure on the front surface of the battery can effectively reduce the recombination of surface carriers while providing the width ratio of the back surface field and reducing the difficulty of the process.
2、针对不同类型的表面掺杂，选择不同的钝化材料进行表面钝化可有效降低电池正反面少子复合率。2. For different types of surface doping, selecting different passivation materials for surface passivation can effectively reduce the minority carrier recombination rate on the front and back sides of the battery.
具体通过在电池前表面采用硼掺杂形成浮动(FFE)结构，这种结构可为光生少子提供横向传输路径，降低前表面少子复合率；该结构对电池背表面场所占的尺寸比例要求较低，可使得背表面场所占比例接近50％；同时，由于电池正面为P型掺杂，采用三氧化二铝(Al2O3)和二氧化硅做表面钝化可有效提升钝化性能，电池背面P区表面同样采用二氧化硅(SiO2)和三氧化二铝(Al2O3)做钝化，N区则采用二氧化硅(SiO2)和氮化硅(SiNx)做钝化，以这种钝化方式可有效降低电池正反面的少子复合率，进而提升电池转换效率。Specifically, a floating (FFE) structure is formed by doping boron on the front surface of the battery. This structure can provide a lateral transmission path for photo-generated minority carriers and reduce the minority carrier recombination rate on the front surface; this structure has a lower requirement on the size ratio of the battery back surface area , which can make the proportion of the back surface area close to 50%; at the same time, since the front side of the battery is P-type doped, the use of aluminum oxide (Al2O3) and silicon dioxide for surface passivation can effectively improve the passivation performance, and the P area on the back side of the battery can effectively improve the passivation performance. The surface is also passivated with silicon dioxide (SiO2) and aluminum oxide (Al2O3), and the N region is passivated with silicon dioxide (SiO2) and silicon nitride (SiNx). This passivation method can effectively Reduce the minority carrier recombination rate on the front and back of the battery, thereby improving the conversion efficiency of the battery.
附图说明Description of drawings
图1为叉指型背接触太阳电池示意图。FIG. 1 is a schematic diagram of an interdigitated back-contact solar cell.
其中：N型单晶硅基体1；前表面P+掺杂层2；前表面三氧化二铝(Al2O3)钝化层3；氮化硅减反射层4；N+掺杂层5；P+掺杂层6；二氧化硅层7；背表面三氧化二铝(Al2O3)钝化层8；背表面氮化硅(SiNx)钝化层9；正电极10；负电极11。Among them: N-type single
具体实施方式Detailed ways
下面结合实施例对本发明作进一步的说明。本发明包含以下内容，但并不仅限于以下内容。The present invention will be further described below in conjunction with the examples. The present invention includes the following contents, but is not limited to the following contents.
为使本发明的上述目的、特征和优点能够更为明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。In order to make the above objects, features and advantages of the present invention more clearly understood, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
参照图1，本发明的IBC电池单元结构包括：1, the structure of the IBC battery cell of the present invention includes:
N型单晶硅片为基体1，所述单晶硅片前表面设置有硼掺杂层2，所述单晶硅片前表面硼掺杂层2上设置有AL2O3钝化层3，在所述单晶硅片前表面AL2O3钝化层3上设置有SiNx减反射层4；所述单晶硅片背表面场为磷掺杂层5，所述单晶硅片背面发射极为硼掺杂层6，所述单晶硅片背表面设置有SiO2钝化层7，所述单晶硅片背面发射极表面设置有AL2O3钝化层8，所述单晶硅片背面场表面设置有SiNx钝化层9，所述单晶硅片背面发射极连接有负电级11，所述单晶硅片背面场连接有正电极10。The N-type single crystal silicon wafer is the
本发明制作上述IBC电池结构的具体方法如下：The specific method of the present invention to make the above-mentioned IBC battery structure is as follows:
S1、选择N型单晶硅片作为基体，并进行双面制绒处理，N型硅片的厚度为140-180μm，电阻率为1-10Ω·cm；S1. Select an N-type single crystal silicon wafer as the substrate, and perform double-sided texturing treatment. The thickness of the N-type silicon wafer is 140-180 μm, and the resistivity is 1-10Ω·cm;
S2、使用低压高温扩散炉对硅片进行双面硼扩散，扩散温度为800-1100℃，扩散时间为10-50分钟，扩散后P+掺杂层的方块电阻为80-160Ω·cm，结深为0.1-0.5μm；S2. Use a low-pressure high-temperature diffusion furnace to diffuse boron on both sides of the silicon wafer. The diffusion temperature is 800-1100°C, the diffusion time is 10-50 minutes, and the sheet resistance of the P+ doped layer after diffusion is 80-160Ω·cm, and the junction depth is 80-160Ω·cm. is 0.1-0.5μm;
S3、使用ALD设备在硅片双面沉积AL2O3薄膜，薄膜厚度为1-10nm；S3. Use ALD equipment to deposit AL2O3 film on both sides of the silicon wafer, and the film thickness is 1-10nm;
S4、使用激光开槽设备对硅片背表面N型BSF区域进行开槽；S4. Use laser grooving equipment to groov the N-type BSF area on the back surface of the silicon wafer;
S5、利用掩膜工艺在激光开槽区域使用低压高温扩散炉对硅片进行单面磷扩散形成背表面场，扩散温度为800-1100℃，扩散时间为10-50分钟，扩散后N+掺杂层的方块电阻为80-160Ω·cm，结深为0.1-0.5μm；S5. Use the mask process to perform single-sided phosphorus diffusion on the silicon wafer in the laser grooved area using a low-pressure high-temperature diffusion furnace to form a back surface field. The diffusion temperature is 800-1100°C, and the diffusion time is 10-50 minutes. The sheet resistance of the layer is 80-160Ω·cm, and the junction depth is 0.1-0.5μm;
S6、使用PECVD设备在硅片正反面沉积氮化硅膜，膜厚为40-80nm，折射率为1.8-2.5；S6. Use PECVD equipment to deposit a silicon nitride film on the front and back of the silicon wafer, with a film thickness of 40-80nm and a refractive index of 1.8-2.5;
S7、对硅片进行丝网印刷银浆和铝浆形成正负电极；S7, screen printing silver paste and aluminum paste on the silicon wafer to form positive and negative electrodes;
S8、放入烧结炉进行烧结，烧结温度为700-1000℃，最终得到IBC电池。S8, put into a sintering furnace for sintering, and the sintering temperature is 700-1000° C., and finally an IBC battery is obtained.
以上所述，仅为本发明的较佳实施例，并非对本发明任何形式上和实质上的限制，应当指出，对于本技术领域的普通技术人员，在不脱离本发明方法的前提下，还将可以做出若干改进和补充，这些改进和补充也应视为本发明的保护范围。凡熟悉本专业的技术人员，在不脱离本发明的精神和范围的情况下，当可利用以上所揭示的技术内容而做出的些许更动、修饰与演变的等同变化，均为本发明的等效实施例；同时，凡依据本发明的实质技术对上述实施例所作的任何等同变化的更动、修饰与演变，均仍属于本发明的技术方案的范围内。The above are only preferred embodiments of the present invention, and are not intended to limit the present invention in any form or substance. It should be pointed out that for those skilled in the art, without departing from the method of the present invention, the Several improvements and supplements can be made, and these improvements and supplements should also be regarded as the protection scope of the present invention. All those skilled in the art, without departing from the spirit and scope of the present invention, can utilize the above-disclosed technical content to make some changes, modifications and equivalent changes of evolution, all belong to the present invention. Equivalent embodiments; at the same time, any modification, modification and evolution of any equivalent changes made to the above embodiments according to the essential technology of the present invention still fall within the scope of the technical solutions of the present invention.
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| CN112349791A (en) * | 2020-10-27 | 2021-02-09 | 浙江晶科能源有限公司 | Solar cell and preparation method thereof |
| CN112614917A (en) * | 2020-12-31 | 2021-04-06 | 中建材浚鑫科技有限公司 | Method for preparing back of PERC single crystal double-sided solar cell |
| CN113659033A (en) * | 2021-07-08 | 2021-11-16 | 浙江爱旭太阳能科技有限公司 | Preparation method of P-type back contact solar cell |
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| CN118983365A (en) * | 2024-07-31 | 2024-11-19 | 上海交通大学 | THBC solar cell structure and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112349791A (en) * | 2020-10-27 | 2021-02-09 | 浙江晶科能源有限公司 | Solar cell and preparation method thereof |
| CN112349791B (en) * | 2020-10-27 | 2023-11-28 | 浙江晶科能源有限公司 | Solar cell and preparation method thereof |
| CN112614917A (en) * | 2020-12-31 | 2021-04-06 | 中建材浚鑫科技有限公司 | Method for preparing back of PERC single crystal double-sided solar cell |
| CN113659033A (en) * | 2021-07-08 | 2021-11-16 | 浙江爱旭太阳能科技有限公司 | Preparation method of P-type back contact solar cell |
| CN114975668A (en) * | 2022-05-27 | 2022-08-30 | 横店集团东磁股份有限公司 | P-type full back contact solar cell with front floating junction and SE superposed and manufacturing method thereof |
| CN114975668B (en) * | 2022-05-27 | 2023-07-21 | 横店集团东磁股份有限公司 | A P-type full back-contact solar cell with a front floating junction superimposed on SE and its manufacturing method |
| CN118983365A (en) * | 2024-07-31 | 2024-11-19 | 上海交通大学 | THBC solar cell structure and preparation method thereof |
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