CN111584558B - Display panel and display device - Google Patents
Display panel and display device Download PDFInfo
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- CN111584558B CN111584558B CN202010379171.5A CN202010379171A CN111584558B CN 111584558 B CN111584558 B CN 111584558B CN 202010379171 A CN202010379171 A CN 202010379171A CN 111584558 B CN111584558 B CN 111584558B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1324—Sensors therefor by using geometrical optics, e.g. using prisms
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/1341—Sensing with light passing through the finger
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Abstract
The application provides a display panel and a display device, wherein the display panel comprises a substrate; the light-emitting units are arranged on the substrate in an array mode and comprise pixel driving circuits and light-emitting devices electrically connected with the pixel driving circuits; the photosensitive units are arranged on the substrate and positioned between two adjacent light-emitting units, and each photosensitive unit comprises a photosensitive sensor (VDP); wherein the light-sensitive sensor (VDP) does not overlap with the projection of the light-emitting layer of the light-emitting device on the substrate. According to the application, the light sensing unit is added in the circuit unit of the display panel, so that the intensity consumption of reflected light after penetrating through the display panel is reduced, and full-screen fingerprint unlocking is realized.
Description
Technical Field
The present application relates to the field of display technologies, and in particular, to a display panel and a display device.
Background
The fingerprint identification technology is the most mainstream mobile phone biological identification mode at present, and the application popularity of the technology is far beyond iris identification and face identification. The traditional fingerprint unlocking can influence the appearance or screen occupation ratio of intelligent equipment such as a mobile phone and the like no matter the traditional fingerprint unlocking adopts a front scraping or pressing mode or a back unlocking mode, so that the under-screen fingerprint is generated.
The under-screen fingerprint unlocking is characterized in that light rays are emitted by the OLED screen, penetrate through the cover plate to the surface of the finger, the reflected light rays are different due to different lines of the finger, the reflected light rays penetrate through the OLED pixel gaps to irradiate the fingerprint sensor, and the fingerprint sensor forms a fingerprint image according to the reflected light rays. However, the disadvantage is that the reflected light of the fingerprint needs to penetrate through the OLED module, which greatly reduces the intensity of the reflected light and increases the difficulty of recognition.
Disclosure of Invention
The application provides a display panel and a display device, which are used for reducing the thickness of the display panel, increasing the intensity of radiated light, improving the probability of fingerprint identification and realizing full-screen unlocking.
In order to realize the functions, the technical scheme provided by the application is as follows:
A display panel, comprising:
A substrate;
The light-emitting units are arranged on the substrate in an array mode and comprise pixel driving circuits and light-emitting devices electrically connected with the pixel driving circuits;
The photosensitive units are arranged on the substrate and positioned between two adjacent light-emitting units, and each photosensitive unit comprises a photosensitive sensor (VDP);
Wherein the light-sensitive sensor (VDP) does not overlap with the projection of the light-emitting layer of the light-emitting device on the substrate.
In the display panel of the present application, the photosensitive unit and the pixel driving circuit each include a thin film transistor layer.
In the display panel of the application, the thin film transistor layer comprises a first active layer and a source/drain electrode which are stacked and arranged corresponding to the light emitting unit;
The thin film transistor layer comprises a second active layer and a conductive layer which are arranged in a stacked manner corresponding to the photosensitive unit.
In the display panel of the application, the first active layer and the second active layer are arranged at the same layer and at intervals;
the source/drain electrode and the conductive layer are stacked, and the conductive layer is located above the source/drain electrode.
In the display panel of the application, the source/drain electrode is overlapped with the projection part of the conductive layer on the substrate, and the overlapped part is positioned at the gap between the light emitting unit and the photosensitive unit.
In the display panel of the present application, the components of the photosensitive unit include: a first thin film transistor (M1), a second thin film transistor (M2), a third thin film transistor (M3), and a storage capacitor (C2);
the grid electrode of the first thin film transistor (M1) is connected with an n-1 level scanning signal (SCAN (n-1)), the drain electrode of the first thin film transistor is electrically connected with the first end of the second capacitor (C2), and the source electrode of the first thin film transistor is connected with a power supply positive Voltage (VDD);
The grid electrode of the second thin film transistor (M2) is electrically connected with the drain electrode of the first thin film transistor (M1), the source electrode is connected with a positive power supply Voltage (VDD), and the drain electrode is connected with the negative electrode of the photosensitive sensor (VDP);
the grid electrode of the third thin film transistor (M3) is connected with an nth-stage scanning signal (SCAN (n)), the drain electrode of the third thin film transistor is connected with a read-write signal (RW), and the source electrode of the third thin film transistor is connected with the anode of the photosensitive sensor (VDP);
The second end of the storage capacitor (C2) is connected with an operating voltage signal (V1), and the first end of the storage capacitor is connected with the drain electrode of the first thin film transistor (M1) and the grid electrode of the second thin film transistor (M2).
In the display panel of the application, the components of the photosensitive unit and the components of the pixel driving circuit are arranged on the same layer, and the read-write signal wiring (RW) and the data signal wiring (Vdate) are arranged on the same layer.
In the display panel of the present application, the photosensor (VDP) is a photodiode or a phototransistor.
The application also provides a display device, which comprises any one of the display panels; and the fingerprint module is positioned below the display panel.
In the display device of the application, the fingerprint module corresponds to the sensitization in the display panel
And (5) setting a unit.
The beneficial effects are that: according to the application, the photosensitive unit is added in the circuit unit in the display panel, the photosensitive unit is embedded in the sub-pixel driving circuit, and the photosensitive sensor (VDP) in the photosensitive unit is not overlapped with the projection of the light-emitting unit in the vertical direction, so that the structure can not only not influence the light-emitting efficiency, but also reduce the intensity consumption of reflected light after penetrating through the display panel, and realize the full-screen fingerprint unlocking.
Drawings
The technical solution and other advantageous effects of the present application will be made apparent by the following detailed description of the specific embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the application;
FIG. 2 is a circuit diagram of a photosensitive unit in a pixel driving circuit according to an embodiment of the present application;
FIG. 3 is a schematic diagram showing a layout of a photosensitive unit in a pixel driving circuit according to an embodiment of the present application;
fig. 4 is a schematic structural diagram of a display device according to a second embodiment of the application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to fall within the scope of the application.
In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically connected, electrically connected or can be communicated with each other; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present application, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
The following disclosure provides many different embodiments, or examples, for implementing different features of the application. In order to simplify the present disclosure, components and arrangements of specific examples are described below. They are, of course, merely examples and are not intended to limit the application. Furthermore, the present application may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not themselves indicate the relationship between the various embodiments and/or arrangements discussed. In addition, the present application provides examples of various specific processes and materials, but one of ordinary skill in the art will recognize the application of other processes and/or the use of other materials.
In the prior art, the fingerprint unlocking under the screen is realized by emitting light from the OLED screen, the light penetrates through the cover plate to reach the surface of the finger, the finger pressing position is different in reflected light due to different lines of the finger, the reflected light penetrates through the OLED pixel gap to irradiate the fingerprint sensor, and the fingerprint sensor can form a fingerprint image according to the reflected light. However, when the reflected light of the fingerprint passes through the OLED module in the display panel, the intensity of the reflected light is reduced, and the difficulty of fingerprint identification is increased. Based on the above, the application provides a display panel and a display device, which can solve the above-mentioned drawbacks.
Example 1
Referring to fig. 1, a schematic structure of a display panel according to an embodiment of the application is shown.
In this embodiment, when the resolution of the display panel is high, the display panel includes a substrate 10, a thin film transistor layer 20, a light emitting device layer 30, a pixel defining layer 40, and a thin film encapsulation layer 50.
In the present embodiment, the display panel includes a light emitting unit 100 and a light sensing unit 200.
The light emitting unit 100 is disposed on the substrate 10, and the light emitting unit 100 includes a pixel driving circuit and a light emitting device layer 30 electrically connected to the pixel driving circuit.
The light sensing units 200 are disposed on the substrate 10, and the light sensing units 200 are located between two adjacent light emitting units 100.
In this embodiment, the photosensitive unit 200 is located between two adjacent light emitting units 100, so as to better receive the reflected light of the fingerprint.
In this embodiment, the substrate 10 is a flexible and transparent PI substrate, mainly polyimide, and the PI material can effectively improve the light transmittance.
In this embodiment, the thin film transistor layer 20 is disposed on the upper surface of the substrate 10, and the thin film transistor layer 20 includes, in order from bottom to top, a first buffer layer 201, a base 202, a second buffer layer 203, a first gate insulating layer 204, a second gate insulating layer 205, a dielectric layer 206, a passivation layer 207, a first planarization layer 208, and a second planarization layer 209.
The thin film transistor layer 20 further includes a first active layer, a second active layer, a first gate electrode, a second gate electrode, a third gate electrode, a fourth gate electrode, source/drain electrodes, and a conductive layer.
The first active layer and the second active layer are disposed on the upper surface of the second buffer layer 203, which is far away from the substrate 202, and the first active layer and the second active layer are disposed at the same layer and interval.
The first gate and the second gate are disposed on the upper surface of the first gate insulating layer 204, which is far away from the second buffer layer 203, and the first gate and the second gate are disposed on the same layer and at intervals.
The third gate and the fourth gate are disposed on the upper surface of the second gate insulating layer 205 away from the first gate insulating layer 204, and the third gate and the fourth gate are disposed on the same layer and at intervals.
The source/drain electrodes are disposed on the upper surface of the dielectric layer 206 away from the second gate insulating layer 205.
The conductive layer is disposed on an upper surface of the first planarization layer 208 away from the second planarization layer 209.
In this embodiment, the first active layer, the first gate electrode, and the third gate electrode are in one-to-one correspondence on the substrate 10.
The second active layer, the second gate electrode and the fourth gate electrode are in one-to-one correspondence on the substrate 10.
In this embodiment, the light emitting unit 100 includes the first active layer, the first gate electrode, the third gate electrode, and the source/drain electrode that are stacked.
The photosensitive unit 200 includes the second active layer, the second gate electrode, the fourth gate electrode, and a conductive layer stacked.
The source/drain electrode is overlapped with the projection part of the conductive layer on the substrate 10, and the overlapped part is positioned at the gap between the light emitting unit 100 and the light sensing unit 200, so that the aperture opening ratio of the display panel is not affected.
The source/drain electrode is a data signal wire (Vdate), and the conductive layer is a read-write signal wire (RW).
In this embodiment, the materials used for the first buffer layer 201, the second buffer layer 203, the first gate insulating layer 204, the second gate insulating layer 205, and the dielectric layer 206 are inorganic materials, including one of silicon nitride, silicon oxide, and silicon oxynitride, which is not limited in this embodiment.
In the present embodiment, the light emitting device layer 30 is disposed on the upper surface of the thin film transistor layer 20 away from the substrate 10.
The light emitting device layer 30 includes an anode 301, a light emitting layer 302, and a cathode 303, which are stacked.
The anode 301 is disposed on the upper surface of the second planarization layer 209 away from the first planarization layer 208, and the anode 301 is connected to the source/drain electrode through the via hole.
The light emitting layer 302 includes sub-pixels on the substrate 10 in one-to-one correspondence with the pixel driving circuits.
The sub-pixel includes one of a red sub-pixel (R), a green sub-pixel (G), and a blue sub-pixel (B).
In this embodiment, the pixel defining layer 40 is disposed on the upper surface of the second planarization layer 209 away from the first planarization layer 208.
In this embodiment, the photosensitive unit 200 includes a photosensitive sensor (VDP), and the photosensitive sensor (VDP) is not overlapped with the projection of the light emitting layer 302 of the light emitting unit 100 on the substrate 10.
In this embodiment, the photosensor (VDP) comprises one of a photodiode or a phototransistor.
Further, in this embodiment, the photosensor (VDP) is a photodiode.
In this embodiment, the photosensitive sensor (VDP) and the red sub-pixel (R), the green sub-pixel (G), and the blue sub-pixel (B) are disposed on the substrate 10 in a staggered manner.
In this embodiment, a light sensing unit 200 is added to the circuit unit of the display panel, where the light sensing unit 200 includes a light sensing sensor (VDP) located in the pixel driving circuit, and the light sensing sensor (VDP) and the projection of the light emitting unit on the substrate are not overlapped, so that the light emitting efficiency of the display panel is not affected, and meanwhile, the intensity consumption of the reflected light after penetrating through the display panel is reduced.
Referring to fig. 2, a circuit diagram of a photosensitive unit in a pixel driving circuit according to an embodiment of the application is provided.
In general, there are 6T1C, 6T2C, 7T1C and 7T2C as common pixel driving circuits, and the present application is only described by taking the 6T1C driving circuit as an example.
It should be noted that the kind of the pixel driving circuit is not limited in the present application.
In this embodiment, the components of the photosensitive unit 200 include a first thin film transistor (M1), a second thin film transistor (M2), a third thin film transistor (M3), a storage capacitor (C2), and a photosensitive sensor (VDP).
The grid electrode of the first thin film transistor (M1) is connected with an n-1 level scanning signal (SCAN (n-1)), the drain electrode of the first thin film transistor is electrically connected with the first end of the second capacitor (C2), and the source electrode of the first thin film transistor is connected with a power supply positive Voltage (VDD).
The grid electrode of the second thin film transistor (M2) is electrically connected with the drain electrode of the first thin film transistor (M1), the source electrode is connected with a positive power supply Voltage (VDD), and the drain electrode is connected with the negative electrode of the light sensing sensor (VDP).
The grid electrode of the third thin film transistor (M3) is connected with an nth-stage scanning signal (SCAN (n)), the drain electrode of the third thin film transistor is connected with a read-write signal (RW), and the source electrode of the third thin film transistor is connected with the anode of the photosensitive sensor (VDP).
The second end of the storage capacitor (C2) is connected with an operating voltage signal (V1), and the first end of the storage capacitor is connected with the drain electrode of the first thin film transistor (M1) and the grid electrode of the second thin film transistor (M2).
Referring to fig. 3, a layout of a photosensitive unit in a pixel driving circuit is provided according to an embodiment of the application.
In this embodiment, the light emitting unit 100 includes a pixel driving circuit, and components of the pixel driving circuit include a driving transistor T1, a first thin film transistor (T2), a second thin film transistor (T3), a third thin film transistor (T4), a fourth thin film transistor (T5), and a fifth thin film transistor (T2).
The components of the photosensitive unit 200 include a first thin film transistor (M1), a second thin film transistor (M2), a third thin film transistor (M3), a storage capacitor (C2), and a photosensitive sensor (VDP).
Referring to fig. 1 and 3, in the present embodiment, the components in the pixel driving circuit are formed by stacking the source/drain electrodes and the first active layer on the substrate 10, wherein the source/drain electrodes are data signal traces (Vdate).
The components of the photosensitive unit 200 are formed by stacking the conductive layer and the second active layer on the substrate 10, wherein the conductive layer is a write signal trace (RW).
When the resolution of the display panel is not high, the components of the photosensitive unit 200 and the components of the pixel driving circuit are arranged in the same layer, and the read-write signal wiring (RW) and the data signal wiring (Vdate) are arranged in the same layer.
Example two
Referring to fig. 4, a schematic structure of a display device according to a second embodiment of the application is shown.
The present embodiment provides a display device, where the display panel includes the display panel of the first embodiment; and a fingerprint module.
The display panel has been described in detail in the first embodiment, and the description thereof will not be repeated here.
In this embodiment, the fingerprint module 300 is located below the display panel.
The fingerprint module 300 is disposed corresponding to the photosensitive unit 200 in the display panel.
In this embodiment, the light emitting layer 302 emits light, the light penetrates through the thin film encapsulation layer 50 to the surface of the finger, and the light reflected back to the display panel is different because of different lines on the surface of the finger, and when the reflected light irradiates the light sensing sensors (VDP) in the gaps between two adjacent light emitting units 100, the light sensing sensors (VDP) can form a fingerprint image according to the reflected light, thereby avoiding the reflected light from penetrating through the display panel, reducing the loss of light, improving the recognition accuracy, and realizing the full-screen fingerprint unlocking.
The application provides a display panel and a display device, wherein the display panel comprises a substrate; the light-emitting units are arranged on the substrate in an array mode and comprise pixel driving circuits and light-emitting devices electrically connected with the pixel driving circuits; the photosensitive units are arranged on the substrate and positioned between two adjacent light-emitting units, and each photosensitive unit comprises a photosensitive sensor (VDP); wherein the light-sensitive sensor (VDP) does not overlap with the projection of the light-emitting layer of the light-emitting device on the substrate.
According to the application, the circuit unit of the display panel is added with the photosensitive unit, the photosensitive unit comprises the photosensitive sensor (VDP) positioned in the pixel driving circuit, and the projection of the photosensitive sensor (VDP) and the light-emitting unit on the substrate is not overlapped, so that the light-emitting efficiency of the display panel is not affected, the intensity consumption of reflected light after penetrating through the display panel is reduced, and the full-screen fingerprint unlocking is realized.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments.
The display panel and the display device provided by the embodiments of the present application are described in detail, and specific examples are applied to illustrate the principles and the embodiments of the present application, and the description of the above embodiments is only used to help understand the technical solution and the core idea of the present application; those of ordinary skill in the art will appreciate that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the application.
Claims (8)
1. A display panel, comprising:
A substrate;
The light-emitting unit is arranged on the substrate in an array and comprises a pixel driving circuit and a light-emitting device electrically connected with the pixel driving circuit, and the light-emitting unit comprises a first active layer and a source/drain electrode which are arranged in a stacked mode;
The light sensing unit is arranged on the substrate and positioned between two adjacent light emitting units, the light sensing unit comprises a first thin film transistor (M1), a second thin film transistor (M2), a third thin film transistor (M3), a storage capacitor and a light sensing sensor, the light sensing unit comprises a second active layer and a conducting layer which are arranged in a stacked mode, the grid electrode of the first thin film transistor (M1) is connected with an n-1 level scanning signal, the drain electrode of the first thin film transistor (M1) is electrically connected with the first end of the second capacitor, and the source electrode of the first thin film transistor (M1) is connected with a positive power supply voltage; the grid electrode of the second thin film transistor (M2) is electrically connected with the drain electrode of the first thin film transistor, the source electrode of the second thin film transistor (M2) is connected with a positive power supply voltage, and the drain electrode of the second thin film transistor (M2) is connected with the negative electrode of the light sensing sensor; the grid electrode of the third thin film transistor (M3) is connected with an nth-stage scanning signal, the drain electrode of the third thin film transistor (M3) is connected with a read-write signal, and the source electrode of the third thin film transistor (M3) is connected with the anode of the photosensitive sensor; the second end of the storage capacitor is connected with a working voltage signal, and the first end of the storage capacitor is connected with the drain electrode of the first thin film transistor and the grid electrode of the second thin film transistor;
The light-sensitive sensor is arranged on the substrate, the projection of the light-emitting layer of the light-emitting device on the substrate is not overlapped, the source/drain electrode of the light-emitting unit and the conductive layer of the light-sensitive unit are arranged in a stacked mode, the conductive layer is positioned above the source/drain electrode, the projection part of the source/drain electrode and the conductive layer on the substrate is overlapped, and the light-sensitive sensor is arranged in an overlapped mode with the read-write signal wiring and the data signal wiring;
The pixel driving circuit comprises a driving transistor (T1), a first thin film transistor (T2), a second thin film transistor (T3), a third thin film transistor (T4), a fourth thin film transistor (T5) and a fifth thin film transistor (T6), wherein the four thin film transistors (T5) and the fifth thin film transistor (T6) are corresponding to a control signal wiring (EM), the first thin film transistor (T2), the second thin film transistor (T3) and the third thin film transistor (M3) are corresponding to an nth scanning signal, the third thin film transistor (T4) and the second thin film transistor (M2) are corresponding to an nth-1 scanning signal, the driving transistor (T1) is arranged between the control signal wiring (EM) and the nth scanning signal, and the first thin film transistor (M1) and the light sensor are arranged between the nth-1 scanning signal and the nth scanning signal.
2. The display panel of claim 1, wherein the light sensing unit and the pixel driving circuit each comprise a thin film transistor layer.
3. The display panel of claim 2, wherein the first active layer is co-layer and spaced apart from the second active layer.
4. A display panel as claimed in claim 3, characterized in that the overlap is located at the gap between the light emitting unit and the light sensing unit.
5. The display panel according to claim 1, wherein the components of the light sensing unit and the components of the pixel driving circuit are arranged in the same layer, and the read-write signal wiring (RW) and the data signal wiring (Vdate) are arranged in the same layer.
6. The display panel of claim 1, wherein the light-sensing sensor (VDP) is a light-sensing diode or a light-sensing triode.
7. A display device comprising the display panel of any one of claims 1 to 6 and a fingerprint module; the fingerprint module is located below the display panel.
8. The display device of claim 7, wherein the fingerprint module is disposed corresponding to a photosensitive unit in the display panel.
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| CN202010379171.5A CN111584558B (en) | 2020-05-07 | 2020-05-07 | Display panel and display device |
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| CN113591676B (en) * | 2021-07-28 | 2024-07-19 | 京东方科技集团股份有限公司 | Active pixel sensor, display panel, electronic device and driving control method |
| CN114168011B (en) | 2021-12-07 | 2023-10-17 | 武汉华星光电半导体显示技术有限公司 | Display panel and mobile terminal |
| CN115732514A (en) * | 2022-11-14 | 2023-03-03 | 武汉华星光电半导体显示技术有限公司 | Display module and display panel |
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| CN110931522B (en) * | 2018-08-31 | 2022-08-09 | 京东方科技集团股份有限公司 | Display panel and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109858398A (en) * | 2019-01-14 | 2019-06-07 | 京东方科技集团股份有限公司 | Display panel and preparation method thereof, display device and fingerprint identification method |
| CN111025722A (en) * | 2019-12-23 | 2020-04-17 | 厦门天马微电子有限公司 | Display panel and display device |
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| CN111584558A (en) | 2020-08-25 |
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