CN111477560B - 太阳能电池用镓、硼掺杂单晶硅棒区分的快速检测方法 - Google Patents
太阳能电池用镓、硼掺杂单晶硅棒区分的快速检测方法 Download PDFInfo
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- CN111477560B CN111477560B CN202010405563.4A CN202010405563A CN111477560B CN 111477560 B CN111477560 B CN 111477560B CN 202010405563 A CN202010405563 A CN 202010405563A CN 111477560 B CN111477560 B CN 111477560B
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- 238000001514 detection method Methods 0.000 title claims abstract description 55
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 230000004069 differentiation Effects 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 3
- 230000007306 turnover Effects 0.000 abstract description 3
- 230000008859 change Effects 0.000 description 7
- 238000004088 simulation Methods 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
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| CN202010405563.4A CN111477560B (zh) | 2020-05-14 | 2020-05-14 | 太阳能电池用镓、硼掺杂单晶硅棒区分的快速检测方法 |
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| CN111477560A CN111477560A (zh) | 2020-07-31 |
| CN111477560B true CN111477560B (zh) | 2023-03-03 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112986685B (zh) * | 2021-02-09 | 2023-11-10 | 西安奕斯伟材料科技股份有限公司 | 单晶硅棒电阻率的测量方法及装置 |
| CN116460991B (zh) * | 2023-04-21 | 2025-10-17 | 西安奕斯伟材料科技股份有限公司 | 一种用于判断晶棒节段的头尾的装置、方法及截断设备 |
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| CN110349875A (zh) * | 2018-04-03 | 2019-10-18 | 江苏微导纳米装备科技有限公司 | 一种测量晶圆表面电荷密度变化的方法 |
| JP2020007163A (ja) * | 2018-07-02 | 2020-01-16 | 信越半導体株式会社 | 原料結晶の抵抗率の測定方法及びfzシリコン単結晶の製造方法 |
| CN111037766A (zh) * | 2019-12-19 | 2020-04-21 | 江苏高照新能源发展有限公司 | 一种用于光伏电池的低成本单晶硅片的制作方法 |
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| EP2611952B1 (en) * | 2010-09-03 | 2021-12-29 | GTAT IP Holding LLC | Method of preparing a silicon single crystal doped with gallium, indium or aluminum |
| KR101674819B1 (ko) * | 2015-08-12 | 2016-11-09 | 주식회사 엘지실트론 | 단결정 성장 방법 |
| CN110753764A (zh) * | 2017-04-25 | 2020-02-04 | 胜高股份有限公司 | n型单晶硅的制造方法、n型单晶硅的锭、硅晶片及外延硅晶片 |
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