CN111474819B - Optical proximity correction method for optimizing MEEF - Google Patents
Optical proximity correction method for optimizing MEEF Download PDFInfo
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- CN111474819B CN111474819B CN202010336815.2A CN202010336815A CN111474819B CN 111474819 B CN111474819 B CN 111474819B CN 202010336815 A CN202010336815 A CN 202010336815A CN 111474819 B CN111474819 B CN 111474819B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
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Abstract
The invention provides an optical proximity correction method for optimizing MEEF, which carries out OPC correction on an original layout, and intercepts layout parts of the MEEF exceeding a threshold value after OPC correction; performing pxOPC correction on the intercepted layout part to obtain a mask plate graph; carrying out pre-correction treatment on the corresponding original layout part according to the mask plate graph to obtain a pre-treatment target layer; and (3) performing OPC correction based on rules and models on the pretreatment target layer to obtain a mask plate layer which finally meets the OPC requirements. The method can effectively promote the segmentation and movement of the guiding mask pattern in the OPC correction based on the model by segmenting and moving the original pattern in advance, and can obtain the mask pattern optimized by MEEF under the condition that the special pattern meets the condition that the simulation pattern is consistent with the target pattern by adjusting the pre-segmentation and movement parameters.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an optical proximity correction method for optimizing MEEF.
Background
In the photolithographic process of ultra-deep submicron integrated circuit fabrication, the phenomenon of deviation of the photolithographic pattern from the mask pattern caused by diffraction and interference of light waves is known as optical proximity effect (Optical Proximity Effect, OPE). As the feature size of the process gradually decreases, optical proximity effect is difficult to avoid in the photolithography process, photolithography enhancement technology (Reticle Enhancement Technology, RET) is generally adopted in the process, and deformation caused by the optical proximity effect is compensated by properly modifying the mask pattern or changing the phase of light transmission of the pattern, so that the photolithography pattern basically meets the design requirement. The optical proximity correction (Optical Proximity Correction, OPC) is an effective photoetching enhancement technology, and the basic idea of the OPC technology is to modify the mask pattern of the integrated circuit layout in advance so that the modification quantity can just compensate the deviation caused by the optical proximity effect. The current OPC basic flow includes: (1) checking design rules of an original layout; (2) performing rule-based OPC corrections; (3) performing model-based OPC corrections; (4) checking the specification of the final mask pattern.
In the mask pattern correction process, a mask error enhancement factor (Mask Error Enhancement Factor, MEEF) is an important parameter for measuring the influence of the mask process on the stability of the lithography pattern, and in addition, the improvement of the lithography resolution is also a focus in the process. As known from rayleigh's law, the resolution (r=k 1 λ/NA), depth of focus (dof=K 2 λ/(NA) 2 ) The received wavelength lambda, the numerical aperture NA, the constant K 1 K 2 Reducing λ and increasing NA, while improving resolution, can result in reduced depth of field. If by reducing K 1 To increase the resolution, the larger the MEEF value, the less controllable the OPC accuracy. With the reduction of the feature size, the mask pattern of some structures has difficulty in considering two parameters of DOF and MEEF, and increasing DOF and reducing MEEF as much as possible becomes a difficulty of OPC correction process.
In order to improve MEEF, the common approach is to adjust Sub-resolution assist patterns (Sub-Resolution Assist Feature, SRAF) in rule-based OPC or to adjust mask patterns in model-based OPC by segmentation, in most cases the SRAF and segmentation have a considerable improvement over mask pattern MEEF. However, when the process node reaches below 16 or 14 nanometers, the size and the spacing of some special patterns are very small, and the MEEF of the mask pattern of the structure is greatly increased due to the fact that the pattern density of the SRAF in the horizontal direction is different from that of the SRAF in the vertical direction. In addition, besides the method of adding SRAF or segmentation based on rules, some software such as the pxOPC tool in Calibre is also used in OPC correction, and the tool can realize self-adjustment of segmentation and addition of reasonable SRAF by an iterative operation method, so that finally, a simulated layer (connourlayer) obtained by mask plate graph is consistent with a target layer (target layer). However, the mask plate graph obtained by the pxOPC operation is often short in section, so that not only is the manufacturing difficulty of the mask plate increased, but also the operation process is complex and time-consuming, and the method is not suitable for OPC correction of a complete layout. Therefore, aiming at a plurality of structural patterns with special sizes, how to efficiently realize that a simulation pattern layer obtained by the mask plate pattern is consistent with a target layer and meets MEEF requirements becomes a problem worthy of research in OPC correction technology.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, the present invention is directed to an optical proximity correction method for optimizing MEEF, which is used to solve the problems that in the prior art, for some special structures, the size of the mask pattern segment calculated by pxcop is small, the SRAF shape and position are irregular, the operation is time-consuming, and the industrial large-scale production process requirement is not satisfied.
To achieve the above and other related objects, the present invention provides a method for optimizing MEEF optical proximity correction, comprising at least the steps of:
performing OPC correction on an original layout, and intercepting layout parts of which the MEEF exceeds a threshold value after the OPC correction;
step two, performing pxOPC correction on the intercepted layout part to obtain a mask plate graph;
step three, carrying out pre-correction treatment on the corresponding original layout part according to the mask plate graph to obtain a pre-treatment target layer;
and fourthly, performing OPC correction based on rules and models on the pretreatment target layer to obtain a mask plate layer which finally meets the OPC requirements.
Preferably, the layout part intercepted in the first step is an OPC target layer containing a high MEEF structure, and the OPC target layer is an intermediate layer obtained by performing OPC correction in a rule-based manner for process compensation.
Preferably, in the second step, the pxOPC is carried out on the intercepted layout part through a pxOPC tool of Calibre software, so as to obtain the mask plate graph.
Preferably, in the step two, in the process of performing pxOPC correction on the truncated layout part, the correction result of the pxOPC is adjusted by setting parameters of segmentation of the mask plate, minimum spacing of the mask plate and correction cycle times.
Preferably, in the second step, the pxOPC parameters are adjusted so that the simulation pattern obtained by the calculated mask plate can be matched with the pattern specification of the OPC target layer or the difference meets the OPC detection error requirement.
Preferably, the method for performing the pre-correction processing on the corresponding original layout part according to the mask plate graph in the third step includes: and selecting mask plate graph parts with MEEF values meeting or approaching a threshold value according to the mask plate graph, and carrying out pre-correction processing on corresponding parts in the original layout by taking segmentation results as references to obtain the preprocessing target layer.
Preferably, the MEEF of the pattern part of the mask plate selected in the step three is different from the expected threshold value by 0-4 nm.
Preferably, in the third step, the method for performing the pre-correction processing on the original layout part includes: and sequentially segmenting and shifting the edges of the original graph part.
Preferably, the length of the edge of the original layout part segmented in the third step meets the requirements of the mask manufacturing process.
Preferably, the moving direction of the edge of the original layout part in the third step includes moving towards the inside of the graph where the edge is located or moving towards the outside of the graph where the edge is located.
Preferably, the range of movement performed on the edges of the original layout part in the third step is-2 nm.
Preferably, in the fourth step, the preprocessing target layer is subjected to OPC correction based on rules and models, so that the simulated pattern obtained by simulating the mask layer basically matches or differs from the specification of the OPC target layer to meet the OPC error requirement.
As described above, the optical proximity correction method for optimizing MEEF of the present invention has the following beneficial effects: the invention adopts a pre-segmentation moving mode to preprocess the original layout by combining with a pxOPC tool, and the obtained preprocessing target layer is further subjected to conventional OPC correction based on rules and models. By means of the method for carrying out pre-segmentation movement on the original layout, on one hand, segmentation can be carried out more flexibly on some special graphs, and the method is more direct and convenient. On the other hand, the method can obtain the mask pattern of the optimized MEEF through pre-segmentation and moving processing. The method can effectively promote the segmentation and movement of the guiding mask pattern in the OPC correction based on the model by segmenting and moving the original pattern in advance, and can obtain the mask pattern optimized by MEEF under the condition that the special pattern meets the condition that the simulation pattern is consistent with the target pattern by adjusting the pre-segmentation and movement parameters.
Drawings
FIG. 1 is a schematic flow chart of an optical proximity correction method for optimizing MEEF according to the present invention;
FIG. 2 is a schematic view of the structure of the target layer taken in the first step of the present invention;
FIG. 3 is a schematic diagram showing a target layer, a mask pattern, and a simulated pattern obtained by simulation under the conditions of + -0.5 nm of the mask pattern, which are obtained by conventional OPC correction, for the minimum repeating unit part pattern in FIG. 2;
FIG. 4 is a schematic diagram of a mask plate obtained after pxOPC correction using the target layer of FIG. 2 as an input layer;
FIG. 5 is a schematic diagram of a target layer, a mask pattern, and a simulation pattern obtained by performing pre-segmentation and displacement of the original layout corresponding to the structure in FIG. 2 to obtain a pre-processed target layer, and performing conventional OPC correction on the pre-processed target layer, wherein the simulation pattern is obtained by simulating the mask pattern under the condition of + -0.5 nm.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
Please refer to fig. 1 to 5. It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
The invention provides an optical proximity correction method for optimizing MEEF, as shown in FIG. 1, FIG. 1 shows a schematic flow chart of the optical proximity correction method for optimizing MEEF of the invention, and in the embodiment, the method comprises the following steps:
performing OPC correction on an original layout, and intercepting layout parts of which the MEEF exceeds a threshold value after the OPC correction; as shown in fig. 2, fig. 2 is a schematic view of the target layer structure cut in the step one of the present invention, and further, the layout part cut in the step one is an OPC target layer containing a high MEEF structure, and the OPC target layer is an intermediate layer obtained by performing OPC correction in a rule-based manner for process compensation. That is, the layout cut in this step is an OPC target layer (target layer) containing a high-meef structure, and the target layer is an intermediate layer obtained by performing OPC correction in a rule-based manner for process compensation.
Step two, performing pxOPC correction on the intercepted layout part to obtain a mask plate graph; as shown in fig. 3, fig. 3 is a schematic diagram showing a target layer, a mask pattern, and a simulation pattern obtained by simulation under the condition of ±0.5nm of the mask pattern, which are obtained by conventional OPC correction, of the minimum repeating unit portion pattern in fig. 2. The minimum repeating unit part graph of the target layer in fig. 2, the target layer 01, the mask graph 02 and the simulation graph 03 of the mask graph obtained after conventional OPC correction are shown in fig. 3, wherein the simulation graph 03 comprises two sub-graphs, namely two contour graphs which are overlapped with each other and have different sizes in fig. 3, one of the two sub-graphs with larger contours is represented as a simulation graph obtained by simulating the mask graph under the condition of 0.5nm larger, and the other sub-graph with smaller contours is represented as a simulation graph obtained by simulating the mask graph under the condition of 0.5nm smaller. In the second step, the layout part is subjected to pxOPC correction, that is, the layout part (i.e., the target layer 01 obtained after the rule-based OPC correction in the conventional OPC correction in fig. 3) with the MEEF exceeding the threshold value obtained in the first step is subjected to pxOPC correction, so as to obtain a mask pattern, as shown in fig. 4, fig. 4 is a schematic diagram of the mask pattern obtained after the target layer in fig. 2 is used as the input layer to perform pxOPC correction, that is, the mask pattern 04 is obtained after the pxOPC correction in the second step. In the second step, the pxOPC is carried out on the intercepted layout part through a pxOPC tool of Calibre software, and the mask plate graph is obtained. And in the step two, in the process of carrying out the pxOPC correction on the intercepted layout part, the correction result of the pxOPC is adjusted by setting the parameters of the segmentation of the mask plate, the minimum spacing of the mask plate and the correction cycle number. Furthermore, in the second step, the pxOPC parameters are adjusted to enable the simulation pattern obtained by the calculated mask plate to be matched with the pattern specification of the OPC target layer or the difference of the simulation pattern and the pattern specification of the OPC target layer to meet the OPC detection error requirement.
Step three, carrying out pre-correction treatment on the corresponding original layout part according to the mask plate graph to obtain a pre-treatment target layer; as shown in fig. 5, fig. 5 is a schematic diagram of a target layer, a mask pattern, and a simulation pattern obtained by performing pre-segmentation and displacement on the original layout corresponding to the structure in fig. 2 to obtain a pre-processed target layer, and performing conventional OPC correction on the pre-processed target layer, wherein the simulation pattern is obtained by simulating the mask pattern under the condition of + -0.5 nm. That is, in the third step, the corresponding original layout part is subjected to the pre-correction processing according to the mask pattern 04 as shown in fig. 4, so as to obtain the preprocessing target layer 05 as shown in fig. 5.
The method for carrying out the pre-correction processing on the corresponding original layout part according to the mask plate graph in the third step further comprises the following steps: and selecting mask pattern parts with MEEF values meeting or approaching a threshold according to the mask pattern 04, and carrying out pre-correction processing on corresponding parts in the original layout by taking segmentation results as references to obtain the preprocessing target layer 06. Still further, the MEEF of the mask pattern portion selected in the third step differs from the desired threshold by 0-4 nm. Still further, in the third step, the method for performing the pre-correction processing on the original layout part includes: the edges of the original graph portion are sequentially segmented and displaced, and in this embodiment, the moving direction of the edges of the original layout portion in the third step includes moving toward the inside of the graph where the edges are located or moving toward the outside of the graph where the edges are located (to obtain the preprocessing target layer 05 after segmentation and displacement as in fig. 5). And step three, the range of movement of the edges of the original layout part is-2 nm.
Further, the length of segmenting the edges of the original layout part in the third step meets the requirements of a mask manufacturing process.
And fourthly, performing OPC correction based on rules and models on the pretreatment target layer to obtain a mask plate layer which finally meets the OPC requirements. As shown in fig. 5, the preprocessing target layer 05 is subjected to OPC correction based on rules and models, so as to obtain a mask layer 06 which finally meets OPC requirements. In the fourth step, the pre-processing target layer 05 is subjected to OPC correction based on rules and models, so that the simulated pattern 07 obtained by simulating the mask layer basically matches or differs from the specification of the OPC target layer to meet the OPC error requirement. The simulation pattern 07 includes two sub-patterns, that is, two contour patterns which are overlapped with each other and have different sizes in fig. 5, one of the two sub-patterns with larger contours is represented as a simulation pattern obtained by simulating the mask pattern under the condition of 0.5nm larger, and the other sub-pattern with smaller contours is represented as a simulation pattern obtained by simulating the mask pattern under the condition of 0.5nm smaller.
As shown in fig. 2, the cut is a partial pattern of an OPC target layer (target layer) of an SRAM region in a layer layout of a middle process, and in the structure, the horizontal pitch between the bilateral symmetry patterns is smaller, but the pitch in the vertical direction is larger, and the line width is larger in the horizontal direction than in the vertical direction. With this structure, the difficulty of OPC correction is: the space density degree and the line width length of the patterns in the horizontal direction and the vertical direction are different, the line width in the horizontal direction is larger, the space is smaller, MEEF of the mask plate pattern in the horizontal direction obtained through OPC correction exceeds a threshold value, the influence of the mask plate size change on the photoetching pattern is large, and the problems that the simulation pattern is not matched with the target layer pattern are solved.
FIG. 3 is a portion of the minimum repeating unit structure in the SRAM region of FIG. 2. And (3) after performing the rule-based OPC correction, obtaining a target layer pattern (target), performing the model-based OPC correction to obtain a mask pattern, and performing simulation on the mask pattern under the model condition to obtain a simulation pattern. Changing model conditions and obtaining corresponding simulation patterns, measuring the sizes of the simulation patterns and the changing sizes of the mask patterns, and obtaining the simulation patterns according to the formulaMEEF＝ΔS 1 /ΔS 2 =Δ (ADI) CD/Δ (Mask) cd≡10, the MEEF value is very high compared to the specifications in the conventional process. In a conventional OPC correction method, a Sub-resolution auxiliary pattern (Sub-Resolution Assist Feature, SRAF) is added to a target pattern in a rule-based OPC correction process, then the target pattern and the SARF are segmented in a model-based OPC correction process, and then the displacement of the segmentation is automatically adjusted by iterative calculation according to the deviation result feedback of the simulation pattern and the target pattern, so as to finally obtain a mask pattern. Typically, MEEF can be optimized for high MEEF mask patterns by shortening segments, increasing SRAF, and the like. However, for some special structures, such as the structure in the SRAM area in this case, the number of segments is limited due to the small horizontal line width itself, and SRAFs are added in the vertical voids on a regular basis, so that the shape of the mask pattern is limited during model-based OPC correction, the simulated pattern cannot be well matched with the target pattern, and MEEF is high. The pxOPC tool can adjust the segmentation and SRAF setting at the same time, and the mask plate graph is obtained through a continuous iterative operation method. Although pxOPC can optimize MEEF and other problems to a certain extent, the calculated mask pattern has small segmentation size, irregular SRAF shape and position, time-consuming operation and does not meet the industrial large-scale production process requirement.
In the first step of the present invention, a target layer of a structure pattern containing a high MEEF value in the SRAM area is cut, the size of the cut target layer is not smaller than 5×5 μm, and the result is shown in FIG. 4 by OPC correction of the target layer using a pxOPC tool of Calibre software. From the pxOPC results, the corrected mask pattern is segmented and thinned, and the original MEEF value is reduced to a certain extent but still exceeds the expected threshold. And properly segmenting and moving the original layout graph of the structure according to the correction trend of the mask plate graph of the pxOPC, and generating a preprocessing target layer. And (3) performing OPC correction based on rules and models on the preprocessed target layer, and respectively adding SRAF and segmentation correction for the preprocessed target layer in the two processes to obtain a final mask plate graph. As shown in fig. 5, the simulated pattern of the finally corrected mask pattern is substantially matched with the target pattern, and the MEEF value is significantly improved; by adjusting parameters such as the position of the original pattern segment and the displacement of the segment, the MEEF of the optimized mask pattern can be obtained to be 5-6.
For the structural graph in the embodiment, the original layout is segmented and displaced in advance to form a new target layer, and then OPC correction based on rules and models is performed, so that the shape of the final mask plate graph can be controlled more flexibly, and the MEEF of the mask plate graph is optimized. The method does not need to modify complex OPC script parameters, combines the advantages of a pxOPC tool, simultaneously avoids the defects of time consumption of pxOPC, complex mask plate preparation process and the like, has simple and flexible processing method, reduces the influence of mask plate process errors on photoetching patterns efficiently, and improves OPC correction precision.
In summary, the method combines the pxOPC tool to pretreat the original layout in a pre-segmentation moving mode, and the obtained pretreatment target layer is further subjected to conventional OPC correction based on rules and models. By means of the method for carrying out pre-segmentation movement on the original layout, on one hand, segmentation can be carried out more flexibly on some special graphs, and the method is more direct and convenient. On the other hand, the method can obtain the mask pattern of the optimized MEEF through pre-segmentation and moving processing. The method can effectively promote the segmentation and movement of the guiding mask pattern in the OPC correction based on the model by segmenting and moving the original pattern in advance, and can obtain the mask pattern optimized by MEEF under the condition that the special pattern meets the condition that the simulation pattern is consistent with the target pattern by adjusting the pre-segmentation and movement parameters. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (9)
1. An optical proximity correction method for optimizing MEEF, comprising at least the steps of:
performing OPC correction on an original layout, and intercepting layout parts of which the MEEF exceeds a threshold value after the OPC correction;
step two, performing pxOPC correction on the intercepted layout part to obtain a mask plate graph;
step three, carrying out pre-correction treatment on the corresponding original layout part according to the mask plate graph to obtain a pre-treatment target layer; the method for carrying out the pre-correction processing on the corresponding original layout part by the mask plate graph comprises the following steps: selecting mask plate graph parts with MEEF values meeting or approaching a threshold value according to the mask plate graph, and carrying out pre-correction processing on corresponding parts in an original layout by taking segmentation results as references to obtain the preprocessing target layer; the method for carrying out the pre-correction processing on the original layout part comprises the following steps: sequentially segmenting and displacing edges of the original layout part;
and fourthly, performing OPC correction based on rules and models on the pretreatment target layer to obtain a mask plate layer which finally meets the OPC requirements.
2. The method for optimizing MEEF optical proximity correction according to claim 1, wherein: the layout part intercepted in the first step is an OPC target layer containing a high MEEF structure, and the OPC target layer is an intermediate layer obtained by OPC correction in a rule-based mode for process compensation.
3. The method for optimizing MEEF optical proximity correction according to claim 1, wherein: and step two, performing the pxOPC correction on the intercepted layout part through a pxOPC tool of Calibre software to obtain the mask plate graph.
4. The method for optimizing the optical proximity correction of a MEEF of claim 3, wherein: in the process of carrying out pxOPC correction on the intercepted layout part, the correction result of the pxOPC is adjusted by setting the parameters of the segmentation of the mask plate, the minimum spacing of the mask plate and the correction cycle times.
5. The method for optimizing MEEF optical proximity correction according to claim 1, wherein: and step three, the MEEF of the pattern part of the mask plate selected in the step three is 0-4 nm different from the expected threshold value.
6. The method for optimizing MEEF optical proximity correction according to claim 1, wherein: and step three, the length of segmenting the edges of the original layout part meets the requirements of a mask manufacturing process.
7. The method for optimizing MEEF optical proximity correction according to claim 1, wherein: and step three, the moving direction of the edge of the original layout part comprises moving towards the inside of the graph where the edge is located or moving towards the outside of the graph where the edge is located.
8. The method for optimizing MEEF optical proximity correction according to claim 1, wherein: and step three, the range of movement of the edges of the original layout part is-2 nm.
9. The method for optimizing MEEF optical proximity correction according to claim 2, wherein: and fourthly, performing OPC correction based on rules and models on the pretreatment target layer, so that the simulated graph obtained by simulating the mask plate layer basically matches or differs from the specification of the OPC target layer to meet the OPC error requirement.
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| CN105093810A (en) * | 2014-05-22 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Method for reducing edge placement error of critical dimension by optical proximity correction |
| CN109240049A (en) * | 2018-11-08 | 2019-01-18 | 上海华力集成电路制造有限公司 | Improve the OPC modification method of metal layer process hot spot |
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| CN109240049A (en) * | 2018-11-08 | 2019-01-18 | 上海华力集成电路制造有限公司 | Improve the OPC modification method of metal layer process hot spot |
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