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CN111406282A - A memory control circuit for a storage device - Google Patents

A memory control circuit for a storage device Download PDF

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Publication number
CN111406282A
CN111406282A CN201880076748.6A CN201880076748A CN111406282A CN 111406282 A CN111406282 A CN 111406282A CN 201880076748 A CN201880076748 A CN 201880076748A CN 111406282 A CN111406282 A CN 111406282A
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CN
China
Prior art keywords
memory
data blocks
control circuit
reading
writing
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Granted
Application number
CN201880076748.6A
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Chinese (zh)
Other versions
CN111406282B (en
Inventor
范茜
周威
单明星
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Publication of CN111406282A publication Critical patent/CN111406282A/en
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Publication of CN111406282B publication Critical patent/CN111406282B/en
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store

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  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

A memory control circuit (400) relates to the field of digital circuits, and is used for reading and writing data in a nonvolatile memory (160), and comprises an exclusive-nor circuit (420) and a reading and writing control circuit (440). The exclusive-nor circuit (420) is used for carrying out bitwise exclusive-nor operation on a plurality of data blocks and generating redundant data blocks, and the read-write control circuit (440) is used for writing the data blocks and the redundant data blocks into the nonvolatile memory (160) and reading the data blocks from the nonvolatile memory (160), wherein the data blocks and the redundant data blocks are stored in one storage unit. Wherein the non-volatile memory (160) comprises a plurality of memory cells, each memory cell having a capacity of n bits and having a capacity of 2nAnd the number of the data blocks is n-1, and n is an integer greater than or equal to 2. Since there is only 2 in each memory celln‑1Since the memory states are used for storing data, the difference of the threshold voltages corresponding to the memory states is about twice that of the original threshold voltages, so that the overlapping degree of the memory states is reduced, and the probability of reading error data by the memory control circuit (400) is reduced.

Description

PCT国内申请，说明书已公开。PCT domestic application, the description has been published.

Claims (16)

PCT国内申请，权利要求书已公开。PCT domestic application, the claims have been published.
CN201880076748.6A 2018-04-23 2018-04-23 Memory control circuit for memory device Active CN111406282B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2018/084116 WO2019204967A1 (en) 2018-04-23 2018-04-23 Memory control circuit for use in storage device

Publications (2)

Publication Number Publication Date
CN111406282A true CN111406282A (en) 2020-07-10
CN111406282B CN111406282B (en) 2022-06-07

Family

ID=68293434

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880076748.6A Active CN111406282B (en) 2018-04-23 2018-04-23 Memory control circuit for memory device

Country Status (2)

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CN (1) CN111406282B (en)
WO (1) WO2019204967A1 (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102063266A (en) * 2009-11-18 2011-05-18 联发科技股份有限公司 Non-volatile memory controller and method for writing current data into non-volatile memory
US20140029355A1 (en) * 2012-07-24 2014-01-30 Samsung Electronics Co., Ltd. Memory device and method of determining read voltage of memory device
CN104679448A (en) * 2015-02-05 2015-06-03 深圳市硅格半导体有限公司 Data bit stream conversion method and device
US9281049B1 (en) * 2014-10-28 2016-03-08 Xilinx, Inc. Read clock forwarding for multiple source-synchronous memory interfaces
CN105632558A (en) * 2014-11-24 2016-06-01 三星电子株式会社 Cross-point memory device including multi-level cells and operating method thereof
CN107027326A (en) * 2015-11-25 2017-08-08 华为技术有限公司 The method and device of data backup in storage system
CN107527645A (en) * 2016-06-22 2017-12-29 爱思开海力士有限公司 The interface circuit related to variable delay and include its semiconductor device and system

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8041886B2 (en) * 2008-09-15 2011-10-18 Seagate Technology Llc System and method of managing memory
US8316175B2 (en) * 2009-11-03 2012-11-20 Inphi Corporation High throughput flash memory system
CN101751334B (en) * 2009-12-30 2012-03-21 中国人民解放军国防科学技术大学 Hardware fault detection method based on reducing program
CN102855934B (en) * 2012-08-23 2016-09-28 上海华虹宏力半导体制造有限公司 Nonvolatile memory system and method for deleting thereof
WO2014109771A1 (en) * 2013-01-14 2014-07-17 Hewlett-Packard Development Company, L.P. Nonvolatile memory array logic

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102063266A (en) * 2009-11-18 2011-05-18 联发科技股份有限公司 Non-volatile memory controller and method for writing current data into non-volatile memory
US20140029355A1 (en) * 2012-07-24 2014-01-30 Samsung Electronics Co., Ltd. Memory device and method of determining read voltage of memory device
US9281049B1 (en) * 2014-10-28 2016-03-08 Xilinx, Inc. Read clock forwarding for multiple source-synchronous memory interfaces
CN105632558A (en) * 2014-11-24 2016-06-01 三星电子株式会社 Cross-point memory device including multi-level cells and operating method thereof
CN104679448A (en) * 2015-02-05 2015-06-03 深圳市硅格半导体有限公司 Data bit stream conversion method and device
CN107027326A (en) * 2015-11-25 2017-08-08 华为技术有限公司 The method and device of data backup in storage system
CN107527645A (en) * 2016-06-22 2017-12-29 爱思开海力士有限公司 The interface circuit related to variable delay and include its semiconductor device and system

Also Published As

Publication number Publication date
CN111406282B (en) 2022-06-07
WO2019204967A1 (en) 2019-10-31

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