CN111384922A - Miniaturized ladder type crystal filter - Google Patents
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Abstract
Description
技术领域technical field
本专利涉及晶体滤波器技术领域，具体涉及一种小型化梯型晶体滤波器。The patent relates to the technical field of crystal filters, in particular to a miniaturized ladder-type crystal filter.
背景技术Background technique
晶体滤波器具有相对带宽窄、温度性能好等特点，是通信、导航等电子设备中的关键元器件。按电路设计分类，晶体滤波器分为单片式晶体滤波器和分立式晶体滤波器，分立式晶体滤波器又分为桥型晶体滤波器和梯型晶体滤波器等。Crystal filters have the characteristics of relatively narrow bandwidth and good temperature performance, and are key components in electronic equipment such as communication and navigation. According to the classification of circuit design, crystal filters are divided into monolithic crystal filters and discrete crystal filters, and discrete crystal filters are further divided into bridge-type crystal filters and ladder-type crystal filters.
梯型滤波电路电路结构简单，只有高频晶体谐振器和低频晶体谐振器，没有电感，且高频晶体谐振器电性能参数相同，低频晶体谐振器的电性能参数也相同，结构简单，设计灵活，容易加工。但是一个基本梯型滤波电路所需要的晶体谐振器数量为桥型电路的2倍，且在实际应用中，为了提高矩型度和阻带抑制，必须将多个基本梯型滤波电路级联使用，这进一步造成了电路体积较大，所以限制了梯型滤波器电路在实际的应用。The ladder filter circuit has a simple circuit structure, only a high-frequency crystal resonator and a low-frequency crystal resonator, without inductance, and the electrical performance parameters of the high-frequency crystal resonator are the same, and the electrical performance parameters of the low-frequency crystal resonator are also the same, the structure is simple, and the design is flexible. , easy to process. However, the number of crystal resonators required by a basic ladder-type filter circuit is twice that of a bridge-type circuit, and in practical applications, in order to improve the rectangular degree and stop-band suppression, multiple basic ladder-type filter circuits must be cascaded. , which further results in a larger circuit volume, which limits the practical application of the ladder filter circuit.
发明内容SUMMARY OF THE INVENTION
为了解决上述问题，本专利提供一种小型化梯型晶体滤波器，能够减少电路的元件使用数量和减小电路体积。In order to solve the above problems, the present patent provides a miniaturized ladder-type crystal filter, which can reduce the number of components used in the circuit and reduce the volume of the circuit.
一种小型化梯型晶体滤波器，包括：串联晶片和并联晶片，所述串联晶片上设置有至少两个性能参数相同的高频晶体谐振器，每两个高频晶体谐振器之间间隔一定距离，且串联晶片上的高频晶体谐振器通过串联连接，所述并联晶片上设置有至少一个性能参数相同的低频晶体谐振器，每两个低频晶体谐振器之间间隔一定距离，且并联晶片上的低频晶体谐振器通过并联连接，高频晶体谐振器与低频晶体谐振器的连接关系包括：每串联的两个高频晶体谐振器之间并联一个低频晶体谐振器，低频晶体谐振器的另一端接地。A miniaturized ladder-type crystal filter, comprising: a series chip and a parallel chip, the series chip is provided with at least two high-frequency crystal resonators with the same performance parameters, and the interval between each two high-frequency crystal resonators is fixed distance, and the high-frequency crystal resonators on the series wafer are connected in series, the parallel wafer is provided with at least one low-frequency crystal resonator with the same performance parameters, every two low-frequency crystal resonators are separated by a certain distance, and the parallel wafers The low-frequency crystal resonators are connected in parallel, and the connection relationship between the high-frequency crystal resonator and the low-frequency crystal resonator includes: a low-frequency crystal resonator is connected in parallel between two high-frequency crystal resonators connected in series, and another low-frequency crystal resonator is connected in parallel. One end is grounded.
进一步的，所述高频晶体谐振器包括一对金属电极，且金属电极沉积在串联晶片上沿长度方向的中轴线处，一对金属电极为两个大小相等的圆形或矩形电极，分别为上电极和下电极，上电极和下电极分别沉积在串联晶片的上表面和下表面且位置相对应，每个上电极引出有一条电极轨道到晶片边缘且与晶片边缘形成上端连接点，上电极的电极轨道引出方向与串联晶片宽度的中轴线方向相同；每个下电极引出有一条电极轨道到晶片边缘且与晶片边缘形成高频晶体谐振器的下端连接点，下电极的电极轨道的引出方向与上电极的电极轨道引出方向相反。Further, the high-frequency crystal resonator includes a pair of metal electrodes, and the metal electrodes are deposited on the central axis of the serial wafer along the length direction, and the pair of metal electrodes is two circular or rectangular electrodes of equal size, respectively The upper electrode and the lower electrode are deposited on the upper surface and the lower surface of the serial wafer respectively and have corresponding positions. Each upper electrode leads out an electrode track to the edge of the wafer and forms an upper end connection point with the edge of the wafer. The upper electrode The lead-out direction of the electrode track is the same as the direction of the central axis of the width of the serial wafer; each lower electrode leads out an electrode track to the edge of the wafer and forms the lower end connection point of the high-frequency crystal resonator with the edge of the wafer, and the lead-out direction of the electrode track of the lower electrode It is opposite to the lead-out direction of the electrode track of the upper electrode.
进一步的，所述低频谐振器包括一对金属电极，且金属电极沉积在并联晶片上沿长度方向的中轴线处，一对金属电极为两个大小相等的圆形或矩形电极，分别为上电极和下电极，上电极和下电极分别沉积在并联晶片的上表面和下表面且位置相对应，每个上电极引出有一条电极轨道到晶片边缘且与晶片边缘形成上端连接点，上电极的电极轨道引出方向与并联晶片宽度的中轴线方向相同；每个下电极引出有一条电极轨道到晶片边缘且与晶片边缘形成低频谐振器的下端连接点，下电极的电极轨道的引出方向与上电极的电极轨道引出方向相反。Further, the low-frequency resonator includes a pair of metal electrodes, and the metal electrodes are deposited on the central axis of the parallel wafer along the length direction, and the pair of metal electrodes is two equal-sized circular or rectangular electrodes, which are the upper electrodes respectively. and the lower electrode, the upper electrode and the lower electrode are respectively deposited on the upper surface and the lower surface of the parallel wafer and the positions are corresponding. Each upper electrode leads out an electrode track to the wafer edge and forms an upper end connection point with the wafer edge. The lead-out direction of the track is the same as the direction of the central axis of the width of the parallel wafer; each lower electrode leads out an electrode track to the edge of the wafer and forms the lower end connection point of the low-frequency resonator with the edge of the wafer. The lead-out direction of the electrode track of the lower electrode is the same as that of the upper electrode. The lead-out direction of the electrode track is opposite.
进一步的，串联晶片上高频晶体谐振器的总体连接方式包括：第1高频晶体谐振器的下端连接点作为输入端，连接输入负载，从输入端开始依次串联有第1高频晶体谐振器、第2高频晶体谐振器、第3高频晶体谐振器，……，第N高频晶体谐振器，若N为偶数，将第N高频晶体谐振器的上端连接点作为串联晶片的输出端连接输出负载；若N为奇数，将第N高频晶体谐振器的下端连接点作为串联晶片的输出端，连接输出负载。Further, the overall connection method of the high-frequency crystal resonator on the serial chip includes: the lower end connection point of the first high-frequency crystal resonator is used as an input end, and the input load is connected, and the first high-frequency crystal resonator is connected in series from the input end in sequence. , the second high-frequency crystal resonator, the third high-frequency crystal resonator, ..., the Nth high-frequency crystal resonator, if N is an even number, the upper end connection point of the Nth high-frequency crystal resonator is used as the output of the series chip The terminal is connected to the output load; if N is an odd number, the lower end connection point of the Nth high-frequency crystal resonator is used as the output terminal of the series chip, and the output load is connected.
更进一步的，串联晶片上高频晶体谐振器的具体连接方式包括：串联晶片的第1高频晶体谐振器上端连接点与输入负载连接，下端连接点与第2高频晶体谐振器下端连接点串联连接，形成第1个串联连接点，第2高频晶体谐振器上端连接点与第3高频晶体谐振器串联下端连接点相连，形成第2个串联连接点,……以此类推，在每两个高频晶体谐振器之间形成一个串联连接点，共形成N-1个串联连接点。Further, the specific connection method of the high-frequency crystal resonator on the series chip includes: the connection point of the upper end of the first high-frequency crystal resonator of the series chip is connected to the input load, and the connection point of the lower end is connected to the connection point of the lower end of the second high-frequency crystal resonator. Connect in series to form the first series connection point, the upper connection point of the second high-frequency crystal resonator is connected to the lower connection point of the third high-frequency crystal resonator in series to form the second series connection point, and so on. A series connection point is formed between every two high-frequency crystal resonators, and N-1 series connection points are formed in total.
可选的，串联晶片上高频晶体谐振器的具体连接方式包括：串联晶片的第1高频晶体谐振器的上端连接点与输入负载连接，下端连接点与第2高频晶体谐振器的下端连接点连接，形成第1个串联连接点，第2高频晶体谐振器的上端连接点与第3高频晶体谐振器的上端连接点连接，形成第2个串联连接点，第3高频晶体谐振器的下端连接点与第4高频晶体谐振器的下端连接点连接，形成第3个串联连接点，……，以这样的连接方式，在每两个高频晶体谐振器之间形成一个串联连接点，共形成N-1个串联连接点，若串联晶片上有奇数个高频晶体谐振器，即N为奇数值，则将第N个高频晶体谐振器的下端连接点连接输出负载，上端连接点和第N-1个高频晶体谐振器的上端连接点相连，形成第N-1个串联连接点；若串联晶片上有偶数个高频晶体谐振器，即N为偶数值，则将第N个高频晶体谐振器的上端连接点连接输出负载，下端连接点和第N-1个高频晶体谐振器的下端连接点相连，形成第N-1个串联连接点。Optionally, the specific connection method of the high-frequency crystal resonator on the series chip includes: the upper connection point of the first high-frequency crystal resonator of the series chip is connected to the input load, and the lower connection point is connected to the lower end of the second high-frequency crystal resonator. The connection point is connected to form the first series connection point, the upper end connection point of the second high frequency crystal resonator is connected to the upper end connection point of the third high frequency crystal resonator to form the second series connection point, the third high frequency crystal resonator is connected. The lower end connection point of the resonator is connected to the lower end connection point of the fourth high-frequency crystal resonator to form a third series connection point, . The series connection points form a total of N-1 series connection points. If there are an odd number of high-frequency crystal resonators on the series wafer, that is, N is an odd value, connect the lower end connection point of the Nth high-frequency crystal resonator to the output load. , the upper end connection point is connected to the upper end connection point of the N-1th high-frequency crystal resonator to form the N-1th series connection point; Then the upper end connection point of the Nth high-frequency crystal resonator is connected to the output load, and the lower end connection point is connected to the lower end connection point of the N-1th high-frequency crystal resonator to form the N-1th series connection point.
可选的，串联晶片上高频晶体谐振器的具体连接方式还包括：第1高频晶体谐振器的下端连接点与输入负载连接，上端连接点与第2高频晶体谐振器的上端连接点连接，形成第1个串联连接点，第2高频晶体谐振器的下端连接点与第3高频晶体谐振器的下端连接点连接，形成第2个串联连接点，第3高频晶体谐振器的上端连接点与第4高频晶体谐振器的上端连接点连接，形成第3个串联连接点，……，以这样的连接方式，在每两个高频晶体谐振器之间形成一个串联连接点，一直到第N高频晶体谐振器，共形成N-1个串联连接点，若串联晶片上有奇数个高频晶体谐振器，即N为奇数值，则将第N个高频晶体谐振器的上端连接点连接输出负载，下端连接点和第N-1高频晶体谐振器的下端连接点相连，形成第N-1个串联连接点；若串联晶片上有偶数个高频晶体谐振器，则将第N高频晶体谐振器的下端连接点连接输出负载，上端连接点和第N-1高频晶体谐振器的上端连接点相连。Optionally, the specific connection method of the high-frequency crystal resonator on the serial chip further includes: the lower end connection point of the first high frequency crystal resonator is connected to the input load, and the upper end connection point is connected to the upper end connection point of the second high frequency crystal resonator. connected to form the first series connection point, the lower end connection point of the second high frequency crystal resonator is connected to the lower end connection point of the third high frequency crystal resonator to form the second series connection point, the third high frequency crystal resonator The upper connection point of the 4th high-frequency crystal resonator is connected to the upper end connection point of the fourth high-frequency crystal resonator to form the third series connection point, ..., in this way, a series connection is formed between every two high-frequency crystal resonators. point, until the Nth high-frequency crystal resonator, a total of N-1 series connection points are formed. If there are an odd number of high-frequency crystal resonators on the series wafer, that is, N is an odd value, the Nth high-frequency crystal will be resonated. The upper connection point of the device is connected to the output load, and the lower connection point is connected to the lower connection point of the N-1th high-frequency crystal resonator to form the N-1th series connection point; if there are an even number of high-frequency crystal resonators on the series chip , the lower end connection point of the Nth high frequency crystal resonator is connected to the output load, and the upper end connection point is connected to the upper end connection point of the N-1th high frequency crystal resonator.
进一步的，并联晶片上低频晶体谐振器的排布方式具体包括：从第1低频晶体谐振器开始，从左到右依次为第2低频晶体谐振器、第3低频晶体谐振器……第N-1低频晶体谐振器。Further, the arrangement of the low-frequency crystal resonators on the parallel chip specifically includes: starting from the first low-frequency crystal resonator, from left to right, the second low-frequency crystal resonator, the third low-frequency crystal resonator...the N-th 1 low frequency crystal resonator.
进一步的，串联晶片与并联晶片的连接方式包括2N-1种：第1低频晶体谐振器的上/下端连接点与串联晶片的第1个串联连接点相连，另一个端连接点接地，第2低频晶体谐振器的上/下电极与串联晶片的第2个串联连接点相连，另一端连接点接地，以此方式类推，第N-1个低频晶体谐振器的上/下端连接点与串联晶片的第N-1个串联连接点相连，另一个端连接点接地。Further, the connection modes of the series chip and the parallel chip include 2 N-1 types: the upper/lower end connection point of the first low-frequency crystal resonator is connected to the first series connection point of the series chip, the other end connection point is grounded, and the second end connection point is grounded. 2 The upper/lower electrodes of the low-frequency crystal resonator are connected to the 2nd series connection point of the series wafer, the other end connection point is grounded, and so on, the upper/lower end connection point of the N-1th low-frequency crystal resonator is connected to the series The N-1th serial connection point of the wafer is connected, and the other end connection point is grounded.
一种小型化梯型晶体滤波器，包括串联晶片和并联晶片，所述串联晶片上设置有5个性能参数相同的高频晶体谐振器，分别为：第1高频晶体谐振器fs1、第2高频晶体谐振器fs4、第3高频晶体谐振器fs3、第4高频晶体谐振器fs4、第5高频晶体谐振器fs5，每两个高频晶体谐振器之间间隔一定距离，且串联晶片上的高频晶体谐振器通过串联连接，所述并联晶片上设置有4个性能参数相同的低频晶体谐振器，分别为：第1低频晶体谐振器fp1、第2低频晶体谐振器fp2、第3低频晶体谐振器fp3、第4低频晶体谐振器fp4、第5低频晶体谐振器fp5，每两个低频晶体谐振器之间间隔一定距离，且并联晶片上的低频晶体谐振器通过并联连接，高频晶体谐振器与低频晶体谐振器的连接关系包括：每串联的两个高频晶体谐振器之间并联一个低频晶体谐振器，低频晶体谐振器的另一端接地，A miniaturized ladder-type crystal filter includes a series chip and a parallel chip, and five high-frequency crystal resonators with the same performance parameters are arranged on the series chip, respectively: a first high-frequency crystal resonator fs1, a second high-frequency crystal resonator The high-frequency crystal resonator fs4, the third high-frequency crystal resonator fs3, the fourth high-frequency crystal resonator fs4, and the fifth high-frequency crystal resonator fs5 are connected in series with a certain distance between each two high-frequency crystal resonators. The high-frequency crystal resonators on the chip are connected in series, and four low-frequency crystal resonators with the same performance parameters are arranged on the parallel chip, which are: the first low-frequency crystal resonator fp1, the second low-frequency crystal resonator fp2, and the first low-frequency crystal resonator fp2. 3. The low-frequency crystal resonator fp3, the fourth low-frequency crystal resonator fp4, and the fifth low-frequency crystal resonator fp5, there is a certain distance between each two low-frequency crystal resonators, and the low-frequency crystal resonators on the parallel chip are connected in parallel, and the high The connection relationship between the high-frequency crystal resonator and the low-frequency crystal resonator includes: a low-frequency crystal resonator is connected in parallel between two high-frequency crystal resonators in series, and the other end of the low-frequency crystal resonator is grounded.
所述高频晶体谐振器包括一对金属电极，且金属电极沉积在串联晶片上沿长度方向的中轴线处，一对金属电极为两个大小相等的圆形或矩形电极，分别为上电极和下电极，上电极和下电极分别沉积在串联晶片的上表面和下表面且位置相对应，每个上电极引出有一条电极轨道到晶片边缘且与晶片边缘形成上端连接点，上电极的电极轨道引出方向与串联晶片宽度的中轴线方向相同；每个下电极引出有一条电极轨道到晶片边缘且与晶片边缘形成高频晶体谐振器的下端连接点，下电极的电极轨道的引出方向与上电极的电极轨道引出方向相反，The high-frequency crystal resonator includes a pair of metal electrodes, and the metal electrodes are deposited on the central axis of the serial wafer along the length direction. The pair of metal electrodes is two equal-sized circular or rectangular electrodes, respectively the upper electrode and the The lower electrode, the upper electrode and the lower electrode are deposited on the upper surface and the lower surface of the serial wafer respectively and have corresponding positions. Each upper electrode leads out an electrode track to the edge of the wafer and forms an upper end connection point with the edge of the wafer. The electrode track of the upper electrode The lead-out direction is the same as the central axis direction of the width of the serial wafer; each lower electrode leads out an electrode track to the edge of the wafer and forms the lower end connection point of the high-frequency crystal resonator with the edge of the wafer, and the lead-out direction of the electrode track of the lower electrode is the same as that of the upper electrode. The lead-out direction of the electrode track is opposite,
所述低频谐振器包括一对金属电极，且金属电极沉积在并联晶片上沿长度方向的中轴线处，一对金属电极为两个大小相等的圆形或矩形电极，分别为上电极和下电极，上电极和下电极分别沉积在并联晶片的上表面和下表面且位置相对应，每个上电极引出有一条电极轨道到晶片边缘且与晶片边缘形成上端连接点，上电极的电极轨道引出方向与并联晶片宽度的中轴线方向相同；每个下电极引出有一条电极轨道到晶片边缘且与晶片边缘形成低频谐振器的下端连接点，下电极的电极轨道的引出方向与上电极的电极轨道引出方向相反。The low-frequency resonator includes a pair of metal electrodes, and the metal electrodes are deposited at the central axis along the length direction on the parallel wafer. The pair of metal electrodes is two equal-sized circular or rectangular electrodes, which are an upper electrode and a lower electrode respectively. , the upper electrode and the lower electrode are deposited on the upper surface and the lower surface of the parallel wafer respectively and have corresponding positions. Each upper electrode leads out an electrode track to the edge of the wafer and forms an upper end connection point with the edge of the wafer. The electrode track of the upper electrode leads out in the direction The direction of the central axis of the width of the parallel wafer is the same; each lower electrode leads out an electrode track to the edge of the wafer and forms the lower end connection point of the low-frequency resonator with the edge of the wafer, and the electrode track of the lower electrode leads out in the same direction as the electrode track of the upper electrode. In the opposite direction.
进一步的，串联晶片上的高频晶体谐振器的排布包括：从左到右分别为第1高频晶体谐振器、第2高频晶体谐振器、第3高频晶体谐振器……第5高频晶体谐振器，Further, the arrangement of the high-frequency crystal resonators on the series wafers includes: from left to right, the first high-frequency crystal resonator, the second high-frequency crystal resonator, the third high-frequency crystal resonator...the fifth high frequency crystal resonators,
串联晶片上高频晶体谐振器的连接方式包括：第1高频晶体谐振器的下端连接点作为输入端，连接输入负载，从输入端开始依次串联有第1高频晶体谐振器、第2高频晶体谐振器、第3高频晶体谐振器，……，第5高频晶体谐振器，将第5高频晶体谐振器的下端连接点作为串联晶片的输出端，连接输出负载。The connection method of the high-frequency crystal resonator on the series chip includes: the lower end connection point of the first high-frequency crystal resonator is used as the input end, and the input load is connected, and the first high-frequency crystal resonator and the second high-frequency crystal resonator are connected in series from the input end in sequence. The frequency crystal resonator, the third high frequency crystal resonator, ..., the fifth high frequency crystal resonator, use the lower end connection point of the fifth high frequency crystal resonator as the output end of the series chip, and connect the output load.
并联晶片上低频晶体谐振器的排布包括：从第1低频晶体谐振器开始，从左到右依次为第2低频晶体谐振器、第3低频晶体谐振器和第4低频晶体谐振器，The arrangement of the low-frequency crystal resonators on the parallel wafer includes: starting from the first low-frequency crystal resonator, from left to right, the second low-frequency crystal resonator, the third low-frequency crystal resonator and the fourth low-frequency crystal resonator,
进一步的，串联晶片与并联晶片的连接方式包括：第1低频晶体谐振器的上/下端连接点与串联晶片的第1个串联连接点相连，另一个端连接点接地，第2低频晶体谐振器的上/下电极与串联晶片的第2个串联连接点相连，另一端连接点接地，以此方式类推，第4个低频晶体谐振器的上/下端连接点与串联晶片的第4个串联连接点相连，另一个端连接点接地。Further, the connection mode of the series chip and the parallel chip includes: the upper/lower end connection point of the first low frequency crystal resonator is connected to the first series connection point of the series chip, the other end connection point is grounded, and the second low frequency crystal resonator is connected to the ground. The upper/lower electrodes of the LF crystal resonator are connected to the 2nd series connection point of the series wafer, the other end connection point is grounded, and so on, the upper/lower end connection point of the 4th low frequency crystal resonator is connected to the 4th series connection point of the series wafer. point is connected, and the other end is connected to the ground.
本专利的有益效果：Beneficial effects of this patent:
1.区别于现有技术的情况，本专利的小型化梯型晶体滤波器将所有的高频晶体谐振器集成到一个晶片上，将所有的低频晶体谐振器集成到另一个晶片上，将原本需要的多个独立的晶体谐振器缩减到两个晶片上，大大减小了体积。1. Different from the situation in the prior art, the miniaturized ladder-type crystal filter of this patent integrates all high-frequency crystal resonators on one chip, and integrates all low-frequency crystal resonators on another chip. The required multiple independent crystal resonators are reduced to two wafers, greatly reducing the size.
2.由于高频晶体谐振器和低频晶体谐振器的电性能参数相同，只要保证了晶片上的平行度，并同时通过同样的工艺参数镀膜来制备金属电极，保证同一片上晶体谐振器的电性能参数一致，便于规模化生产。2. Since the electrical performance parameters of the high-frequency crystal resonator and the low-frequency crystal resonator are the same, as long as the parallelism on the wafer is ensured, and the metal electrodes are prepared by coating with the same process parameters at the same time, the electrical performance of the crystal resonator on the same chip is guaranteed. The parameters are consistent, which is convenient for large-scale production.
附图说明Description of drawings
下面结合附图和具体实施方式对本专利做进一步详细的说明。The present patent will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.
图1是本专利实施例的小型化梯型晶体滤波器的电路图；1 is a circuit diagram of a miniaturized ladder-type crystal filter according to an embodiment of the present invention;
图2是本专利实施例的小型化梯型晶体滤波器的结构示意图。FIG. 2 is a schematic structural diagram of a miniaturized ladder-type crystal filter according to an embodiment of the present patent.
具体实施方式Detailed ways
下面将结合本专利实施例中的附图，对本专利实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本专利一部分实施例，而不是全部的实施例。基于本专利中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本专利保护的范围。The technical solutions in the embodiments of the present patent will be clearly and completely described below with reference to the drawings in the embodiments of the present patent. Obviously, the described embodiments are only a part of the embodiments of the present patent, rather than all the embodiments. Based on the embodiments in this patent, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the scope of protection of this patent.
请参阅图1，图1是本专利优选实施例的一种小型化梯型晶体滤波器的结构示意图。本优选实施例的小型化梯型晶体滤波器包括串联晶片和并联晶片，所述串联晶片上设置有5个性能参数相同的高频晶体谐振器，分别为：第1高频晶体谐振器fs1、第2高频晶体谐振器fs4、第3高频晶体谐振器fs3、第4高频晶体谐振器fs4、第5高频晶体谐振器fs5，每两个高频晶体谐振器之间间隔一定距离，且串联晶片上的高频晶体谐振器通过串联连接，所述并联晶片上设置有4个性能参数相同的低频晶体谐振器，分别为：第1低频晶体谐振器fp1、第2低频晶体谐振器fp2、第3低频晶体谐振器fp3、第4低频晶体谐振器fp4、第5低频晶体谐振器fp5，每两个低频晶体谐振器之间间隔一定距离，且并联晶片上的低频晶体谐振器通过并联连接，高频晶体谐振器与低频晶体谐振器的连接关系包括：每串联的两个高频晶体谐振器之间并联一个低频晶体谐振器，低频晶体谐振器的另一端接地。Please refer to FIG. 1 , which is a schematic structural diagram of a miniaturized ladder-type crystal filter according to a preferred embodiment of the present patent. The miniaturized ladder-type crystal filter of this preferred embodiment includes a series chip and a parallel chip, and five high-frequency crystal resonators with the same performance parameters are arranged on the series chip, respectively: the first high-frequency crystal resonator f s1 , the second high-frequency crystal resonator f s4 , the third high-frequency crystal resonator f s3 , the fourth high-frequency crystal resonator f s4 , the fifth high-frequency crystal resonator f s5 , each of the two high-frequency crystal resonators There is a certain distance between them, and the high-frequency crystal resonators on the series chip are connected in series, and four low-frequency crystal resonators with the same performance parameters are arranged on the parallel chip, which are: the first low-frequency crystal resonator f p1 , the first low-frequency crystal resonator f p1 , the 2 low frequency crystal resonator f p2 , third low frequency crystal resonator f p3 , fourth low frequency crystal resonator f p4 , fifth low frequency crystal resonator f p5 , every two low frequency crystal resonators are separated by a certain distance and connected in parallel The low-frequency crystal resonators on the wafer are connected in parallel, and the connection relationship between the high-frequency crystal resonator and the low-frequency crystal resonator includes: a low-frequency crystal resonator is connected in parallel between two high-frequency crystal resonators connected in series, and the low-frequency crystal resonator is connected in parallel. The other end is grounded.
进一步的，串联晶片和并联晶片均采用压电晶体材料加工，优选材料包括：石英晶体，串联晶片和并联晶片均为矩形形状。Further, both the series wafer and the parallel wafer are processed with piezoelectric crystal materials, and the preferred materials include: quartz crystal, and both the series wafer and the parallel wafer are rectangular in shape.
所述高频晶体谐振器包括一对金属电极，且金属电极沉积在串联晶片上沿长度方向的中轴线处，一对金属电极为两个大小相等的圆形或矩形电极，分别为上电极和下电极，上电极和下电极分别沉积在串联晶片的上表面和下表面且位置相对应，每个上电极引出有一条电极轨道到晶片边缘且与晶片边缘形成上端连接点，上电极的电极轨道引出方向与串联晶片宽度的中轴线方向相同；每个下电极引出有一条电极轨道到晶片边缘且与晶片边缘形成高频晶体谐振器的下端连接点，下电极的电极轨道的引出方向与上电极的电极轨道引出方向相反。The high-frequency crystal resonator includes a pair of metal electrodes, and the metal electrodes are deposited on the central axis of the serial wafer along the length direction. The pair of metal electrodes is two equal-sized circular or rectangular electrodes, respectively the upper electrode and the The lower electrode, the upper electrode and the lower electrode are deposited on the upper surface and the lower surface of the serial wafer respectively and have corresponding positions. Each upper electrode leads out an electrode track to the edge of the wafer and forms an upper end connection point with the edge of the wafer. The electrode track of the upper electrode The lead-out direction is the same as the central axis direction of the width of the serial wafer; each lower electrode leads out an electrode track to the edge of the wafer and forms the lower end connection point of the high-frequency crystal resonator with the edge of the wafer, and the lead-out direction of the electrode track of the lower electrode is the same as that of the upper electrode. The lead-out direction of the electrode track is opposite.
所述低频谐振器包括一对金属电极，且金属电极沉积在并联晶片上沿长度方向的中轴线处，一对金属电极为两个大小相等的圆形或矩形电极，分别为上电极和下电极，上电极和下电极分别沉积在并联晶片的上表面和下表面且位置相对应，每个上电极引出有一条电极轨道到晶片边缘且与晶片边缘形成上端连接点，上电极的电极轨道引出方向与并联晶片宽度的中轴线方向相同；每个下电极引出有一条电极轨道到晶片边缘且与晶片边缘形成低频谐振器的下端连接点，下电极的电极轨道的引出方向与上电极的电极轨道引出方向相反。The low-frequency resonator includes a pair of metal electrodes, and the metal electrodes are deposited at the central axis along the length direction on the parallel wafer. The pair of metal electrodes is two equal-sized circular or rectangular electrodes, which are an upper electrode and a lower electrode respectively. , the upper electrode and the lower electrode are deposited on the upper surface and the lower surface of the parallel wafer respectively and have corresponding positions. Each upper electrode leads out an electrode track to the edge of the wafer and forms an upper end connection point with the edge of the wafer. The electrode track of the upper electrode leads out in the direction The direction of the central axis of the width of the parallel wafer is the same; each lower electrode leads out an electrode track to the edge of the wafer and forms the lower end connection point of the low-frequency resonator with the edge of the wafer, and the electrode track of the lower electrode leads out in the same direction as the electrode track of the upper electrode. In the opposite direction.
如图2所示，串联晶片上的高频晶体谐振器的排布包括：从左到右分别为第1高频晶体谐振器、第2高频晶体谐振器、第3高频晶体谐振器……第5高频晶体谐振器。As shown in Figure 2, the arrangement of the high-frequency crystal resonators on the series wafer includes: from left to right, the first high-frequency crystal resonator, the second high-frequency crystal resonator, the third high-frequency crystal resonator... …the 5th high-frequency crystal resonator.
串联晶片上高频晶体谐振器的连接方式包括：第1高频晶体谐振器的下端连接点作为输入端，连接输入负载，从输入端开始依次串联有第1高频晶体谐振器、第2高频晶体谐振器、第3高频晶体谐振器，……，第5高频晶体谐振器，将第5高频晶体谐振器的下端连接点作为串联晶片的输出端，连接输出负载。The connection method of the high-frequency crystal resonator on the series chip includes: the lower end connection point of the first high-frequency crystal resonator is used as the input end, and the input load is connected, and the first high-frequency crystal resonator and the second high-frequency crystal resonator are connected in series from the input end in sequence. The frequency crystal resonator, the third high frequency crystal resonator, ..., the fifth high frequency crystal resonator, use the lower end connection point of the fifth high frequency crystal resonator as the output end of the series chip, and connect the output load.
可选的，串联晶片上高频晶体谐振器的具体连接方式包括：串联晶片的第1高频晶体谐振器的上端连接点与输入负载连接，下端连接点与第2高频晶体谐振器的下端连接点连接，形成第1个串联连接点，第2高频晶体谐振器的上端连接点与第3高频晶体谐振器的上端连接点连接，形成第2个串联连接点，第3高频晶体谐振器的下端连接点与第4高频晶体谐振器的下端连接点连接，形成第3个串联连接点，……，以这样的连接方式，在每两个高频晶体谐振器之间形成一个串联连接点，第5个高频晶体谐振器的下端连接点连接输出负载，上端连接点和第4个高频晶体谐振器的上端连接点相连，形成第4个串联连接点。Optionally, the specific connection method of the high-frequency crystal resonator on the series chip includes: the upper connection point of the first high-frequency crystal resonator of the series chip is connected to the input load, and the lower connection point is connected to the lower end of the second high-frequency crystal resonator. The connection point is connected to form the first series connection point, the upper end connection point of the second high frequency crystal resonator is connected to the upper end connection point of the third high frequency crystal resonator to form the second series connection point, the third high frequency crystal resonator is connected. The lower end connection point of the resonator is connected to the lower end connection point of the fourth high-frequency crystal resonator to form a third series connection point, . The series connection point, the lower connection point of the fifth high-frequency crystal resonator is connected to the output load, and the upper connection point is connected to the upper connection point of the fourth high-frequency crystal resonator to form the fourth series connection point.
可选的，串联晶片上高频晶体谐振器的具体连接方式还包括：第1高频晶体谐振器的下端连接点与输入负载连接，上端连接点与第2高频晶体谐振器的上端连接点连接，形成第1个串联连接点，第2高频晶体谐振器的下端连接点与第3高频晶体谐振器的下端连接点连接，形成第2个串联连接点，第3高频晶体谐振器的上端连接点与第4高频晶体谐振器的上端连接点连接，形成第3个串联连接点，……，以这样的连接方式，在每两个高频晶体谐振器之间形成一个串联连接点，一直到第5高频晶体谐振器，共形成4个串联连接点，第5个高频晶体谐振器的上端连接点连接输出负载，下端连接点和第4个高频晶体谐振器的下端连接点相连，形成第4个串联连接点。Optionally, the specific connection method of the high-frequency crystal resonator on the serial chip further includes: the lower end connection point of the first high frequency crystal resonator is connected to the input load, and the upper end connection point is connected to the upper end connection point of the second high frequency crystal resonator. connected to form the first series connection point, the lower end connection point of the second high frequency crystal resonator is connected to the lower end connection point of the third high frequency crystal resonator to form the second series connection point, the third high frequency crystal resonator The upper connection point of the 4th high-frequency crystal resonator is connected to the upper end connection point of the fourth high-frequency crystal resonator to form the third series connection point, ..., in this way, a series connection is formed between every two high-frequency crystal resonators. point, until the fifth high-frequency crystal resonator, a total of 4 series connection points are formed. The upper connection point of the fifth high-frequency crystal resonator is connected to the output load, and the lower connection point is connected to the lower end of the fourth high-frequency crystal resonator. The connection points are connected to form a 4th series connection point.
并联晶片上低频晶体谐振器的排布包括：从第1低频晶体谐振器开始，从左到右依次为第2低频晶体谐振器、第3低频晶体谐振器和第4低频晶体谐振器。The arrangement of low frequency crystal resonators on the parallel wafer includes: starting from the first low frequency crystal resonator, from left to right are the second low frequency crystal resonator, the third low frequency crystal resonator and the fourth low frequency crystal resonator.
串联晶片与并联晶片的连接方式包括24种，本实施例仅提供以下示例连接方式，不一一赘述所有连接方式。There are 2 to 4 connection methods for the serial chip and the parallel chip. This embodiment only provides the following example connection methods, and does not describe all the connection methods one by one.
可选的，第1低频晶体谐振器fp1的上端连接点与串联晶片的第1个串联连接点相连，下端连接点接地，第2低频晶体谐振器fp2的上端连接点与串联晶片的第2个串联连接点相连，下端连接点接地，……以此方式类推，第4低频晶体谐振器fp4的上端连接点与串联晶片的第4个串联连接点相连，下端连接点接地。Optionally, the upper connection point of the first low frequency crystal resonator fp1 is connected to the first series connection point of the series wafer, the lower end connection point is grounded, and the upper end connection point of the second low frequency crystal resonator fp2 is connected to the second connection point of the series wafer. The series connection point is connected, the lower end connection point is grounded, and so on, the upper end connection point of the fourth low-frequency crystal resonator fp4 is connected with the fourth series connection point of the series wafer, and the lower end connection point is grounded.
可选的，第1低频晶体谐振器fp1的下端连接点与串联晶片的第1个串联连接点相连，上端连接点接地，第2低频晶体谐振器fp2的上端连接点与串联晶片的第2个串联连接点相连，下端连接点接地，……以此方式类推，第4低频晶体谐振器fp4的上端连接点与串联晶片的第4个串联连接点相连，下端连接点接地。Optionally, the lower end connection point of the first low frequency crystal resonator fp1 is connected to the first series connection point of the series chip, the upper end connection point is grounded, and the upper end connection point of the second low frequency crystal resonator fp2 is connected to the second series connection point of the series chip. The series connection point is connected, the lower end connection point is grounded, and so on, the upper end connection point of the fourth low-frequency crystal resonator fp4 is connected with the fourth series connection point of the series wafer, and the lower end connection point is grounded.
在一个优选实施例中，部分结构参数可选用以下尺寸：In a preferred embodiment, the following dimensions can be selected for some structural parameters:
优选的，每片晶片的长尺寸为7mm，宽尺寸分别为5mm，采用厚度剪切振动模式将晶片厚度剪切为0.068mm。Preferably, each wafer has a length of 7 mm and a width of 5 mm, respectively, and the thickness of the wafer is sheared to 0.068 mm using a thickness shear vibration mode.
优选的，串联晶片上的金属电极选用圆形铝电极，其铝电极直径为Ф0.5mm，金属电极的厚度为3000埃，高频晶体谐振器的谐振频率为21.427M。Preferably, the metal electrode on the series wafer is a circular aluminum electrode, the diameter of the aluminum electrode is Ф0.5mm, the thickness of the metal electrode is 3000 angstroms, and the resonance frequency of the high-frequency crystal resonator is 21.427M.
优选的，并联晶片上的金属电极采用圆形铝电极，其铝电极直径为Ф0.5mm，金属电极的厚度为2000埃，低频晶体谐振器的谐振频率为21.385M。Preferably, the metal electrode on the parallel wafer is a circular aluminum electrode, the diameter of the aluminum electrode is Ф0.5mm, the thickness of the metal electrode is 2000 angstroms, and the resonant frequency of the low-frequency crystal resonator is 21.385M.
以上所述仅为本专利的实施例，并非因此限制本专利的专利范围，凡是利用本专利说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本专利的专利保护范围内。The above descriptions are only the embodiments of this patent, and are not intended to limit the scope of this patent. Any equivalent structure or equivalent process transformation made by using the contents of this patent specification and drawings, or directly or indirectly applied to other related technologies Fields are similarly included in the scope of patent protection of this patent.
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