CN111370348A - Semiconductor cleaning device with online monitoring function - Google Patents

Abstract

The invention relates to a semiconductor cleaning device with an on-line monitoring function, comprising: a cleaning chamber, a cleaning device for cleaning an array substrate after etching, a monitoring chamber, an air extraction device, a cleaning chamber for monitoring the array substrate after cleaning A first monitoring device for wafer appearance and surface roughness, a second monitoring device for monitoring the crystal phase change on the surface of the array substrate after cleaning, a third monitoring device for monitoring the warpage change on the surface of the array substrate after cleaning, and The conveying device, the cleaning device and the monitoring chamber are sequentially communicated with the etching chamber, the air inlet of the air extraction device is communicated with the monitoring chamber, the first monitoring device and the second monitoring device are arranged on the monitoring chamber, and the third monitoring device is arranged on the monitoring chamber. inside the monitoring chamber. In the semiconductor cleaning device provided by the present invention, a corresponding monitoring device is used to monitor the array substrate after cleaning, so that parameters such as crystal phase composition and surface roughness can be obtained online, so as to feedback and adjust the cleaning process and further improve production efficiency and good quality. Rate.

Description

A semiconductor cleaning device with on-line monitoring function

technical field

The invention relates to the technical field of process monitoring, in particular to a semiconductor cleaning device with an on-line monitoring function.

Background technique

Whether integrated circuits, advanced packaging, semiconductor lighting devices or power electronic devices, their performance is highly dependent on the quality control of the semiconductor material cleaning process.

In the cleaning process of semiconductor materials, in order to achieve the requirements of uniformity, high efficiency, low damage, low residue, and no re-oxidation of the cleaning materials, during the material cleaning process, it is necessary to control the reaction temperature in the cleaning pool, the warpage of the cleaned material, The cleaning speed, cleaning fluid flow, cleaning impact pressure, cleaning device temperature and other index parameters that have a direct impact on material performance are accurately controlled in real time.

With the rapid development of the miniaturization, high-density integration and multi-layer wiring of semiconductor devices, in the preparation process of semiconductor materials, tiny contaminants such as particles and metal impurities, surface adsorption chemicals, etc. The impact of yield and reliability is increasingly significant. Therefore, the cleaning process to remove surface residues becomes an important technical process that affects the reliability and yield of semiconductor materials.

At present, some researches have been carried out on the monitoring of cleaning quality in the cleaning process of semiconductor materials, and some results have been obtained. However, the detection mainly focuses on a single aspect, and the detection ability is poor, and the material cleaning process involves the evolution of the material microstructure and the stress change of the material. At present, there is a lack of a variety of more advanced measurement methods to detect these microscopic changes in order to explore the process of material cleaning in essence, so as to optimize the material cleaning process more scientifically and determine the best cleaning process for different materials.

SUMMARY OF THE INVENTION

In view of the above problems, a semiconductor cleaning device with an online monitoring function is provided, which aims to obtain information such as surface topography, roughness and crystal phase structure of an array substrate by online monitoring to reversely optimize the cleaning process.

The specific technical solutions are as follows:

A semiconductor cleaning device with on-line monitoring function has the following features, comprising: a cleaning chamber, a cleaning device arranged in the cleaning chamber and used for cleaning an array substrate after etching, a monitoring chamber, an air extraction device, A first monitoring device for monitoring the appearance and surface roughness of the array substrate after cleaning, a second monitoring device for monitoring the crystal phase change on the surface of the array substrate after cleaning, and a warpage on the surface of the array substrate after cleaning The changed third monitoring device and the transfer device for transferring the array substrate, the cleaning device and the monitoring chamber are sequentially communicated with the etching chamber, the air inlet of the air extraction device is communicated with the monitoring chamber, the first monitoring device and the second monitoring The device is arranged on the monitoring chamber, and the third monitoring device is arranged in the monitoring chamber.

The above-mentioned semiconductor cleaning device also has the characteristics that the cleaning device includes a cleaning pool for carrying the etched array substrate and a cleaning nozzle located above the cleaning pool and used for cleaning the array substrate in the cleaning pool. Clean inside the chamber.

The above-mentioned semiconductor cleaning device also has the feature that the cleaning device further includes a temperature control table for heating and controlling the temperature of the cleaning pool, the cleaning pool is seated on the temperature control table, and the temperature control table is fixed on the conveying device.

The above-mentioned semiconductor cleaning device also has the feature that the first monitoring device includes a lens structure and an electron generating structure, the lens structure is arranged on the electron generating structure, and the electron generating structure is fixed on the monitoring chamber.

The above-mentioned semiconductor cleaning device also has the feature that the first monitoring device further includes a two-axis slide table, the two-axis slide table is arranged on the top of the monitoring chamber, and the electron generating structure is arranged on the longitudinal slide table in the two-axis slide table.

The above-mentioned semiconductor cleaning device also has the feature that the second monitoring device includes an X-ray generator and an X-ray detector, and the X-ray generator and the X-ray detector are fixed on the monitoring chamber.

The above-mentioned semiconductor cleaning device also has the feature that the third monitoring device includes a CCD camera and a light generator on one side of the CCD camera, and the CCD camera and the light generator are arranged on the monitoring chamber.

The above-mentioned semiconductor cleaning device also has the feature that the air suction device is a condensate pump.

The beneficial effects of the above scheme are:

In the semiconductor cleaning device provided by the present invention, a corresponding monitoring device is used to monitor the array substrate after cleaning, so as to obtain parameters such as crystal phase composition and surface roughness online, so as to feedback and adjust the cleaning process and further improve production efficiency and good quality Rate.

Description of drawings

FIG. 1 is a schematic structural diagram of a semiconductor cleaning apparatus provided in an embodiment of the present invention.

In the drawings: 1. Cleaning chamber; 2. Cleaning device; 3. Monitoring chamber; 4. Air extraction device; 5. First monitoring device; 6. Second monitoring device; 7. Third monitoring device; 8. Transmission device; 9. Cleaning pool; 10. Cleaning nozzle; 11. Temperature control table; 12. Lens structure; 13. Electron generating structure; 14. Two-axis slide table; 15. X-ray generator; 16. X-ray detector ; 17, CCD camera; 18, light generator.

Detailed ways

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present invention.

It should be noted that the embodiments of the present invention and the features of the embodiments may be combined with each other under the condition of no conflict.

The present invention will be further described below with reference to the accompanying drawings and specific embodiments, but it is not intended to limit the present invention.

FIG. 1 is a schematic structural diagram of a semiconductor cleaning apparatus provided in an embodiment of the present invention. As shown in FIG. 1, the semiconductor cleaning device provided in the embodiment of the present invention includes: a cleaning chamber 1, a cleaning device 2 disposed in the cleaning chamber 1 and used for cleaning the etched array substrate, and a cleaning device 2 for cleaning the array substrate after etching. A monitoring chamber 3 for online monitoring of the cleaned array substrate, an air extraction device 4, a first monitoring device 5 for monitoring the appearance and surface roughness of the cleaned array substrate, 5 for monitoring the cleaned array substrate The second monitoring device 6 for surface crystal phase change, the third monitoring device 7 for monitoring the warpage change of the surface of the array substrate after cleaning, and the transfer device 8 for transferring the array substrate, the cleaning device 2 and the monitoring chamber 3 are in sequence Connected with the etching chamber, the air inlet of the air extraction device 4 is communicated with the monitoring chamber 3, the first monitoring device 5 and the second monitoring device 6 are arranged on the monitoring chamber 3, and the third monitoring device 7 is arranged in the monitoring chamber 3 Inside.

In the present invention, the cleaning chamber 1 and the monitoring chamber 3 are communicated through a transfer door located on the cleaning chamber 1, and the transfer device 8 transfers the cleaned array substrate from the cleaning chamber 1 to the monitoring chamber through the transfer door. 3, when the monitoring chamber 3 is pumped to a high vacuum state by the air extraction device 4 (which can be a condensate pump), the corresponding monitoring device will conduct corresponding monitoring, and feedback and adjust the cleaning operation of the cleaning device 2 according to the corresponding monitoring results. .

Specifically, the cleaning device 2 in the present invention includes a cleaning pool 9 for carrying the etched array substrate and a cleaning nozzle 10 located above the cleaning pool 9 and used for cleaning the array substrate in the cleaning pool 9. In the present invention, the The cleaning nozzle 10 introduces a cleaning agent and cleans the etched array substrate. In the present invention, the cleaning tank 9 can be conveyed by the conveying device 8 . In order to improve efficiency, a temperature control station 11 can also be set in the present invention, and the temperature control station 11 can be used to adjust and control the temperature of the cleaning pool 9. When the temperature control station 11 is set, the cleaning pool 9 in the present invention can be fixed on the temperature control table 11. . In the present invention, a flow regulating valve and a clamp-type flow sensor can also be arranged on the connecting pipe of the cleaning nozzle 10 to adjust the cleaning flow and impact stress during cleaning, thereby reducing the influence on the fine structure of the material, ensuring the cleaning quality, and satisfying many The use of such materials when cleaning is required.

Specifically, in the present invention, the first monitoring device 5 includes a lens structure 12 and an electron generating structure 13 . The lens structure 12 is arranged on the electron generating structure 13 , and the electron generating structure 13 is fixed on the monitoring chamber 3 . The monitoring device 5 is a scanning electron microscope. In the present invention, the lens structure 12 is arranged on the electron generating structure 13, and the electron generating structure 13 is fixed on the monitoring chamber 3. In the present invention, the first monitoring device 5 is used to obtain the shape of the material in the area to be monitored. SEM image of the appearance. In order to improve the efficiency, the electron generating structure 13 in the present invention can be mounted on the longitudinal sliding table in the two-axis sliding table 14. In the present invention, the two-axis sliding table 14 includes a longitudinal sliding table that can move up and down The horizontal sliding table that moves left and right in the direction, and cooperates with the forward and backward movement of the transmission device 8, can realize the rapid monitoring of the area to be monitored.

Specifically, in the present invention, the second monitoring device 6 includes an X-ray generator 15 and an X-ray detector 16 , and the X-ray generator 15 and the X-ray detector 16 are fixed on the monitoring chamber 3 . The changes in the position, shape and intensity of the X-ray diffraction peaks on the surface of the array substrate reflect the changes in the array substrate film structure, composition, surface roughness and other data changes during the cleaning process, and then feedback and adjust cleaning processes such as cleaning time and flow.

Specifically, in the present invention, the third monitoring device 7 includes a CCD camera 17 and a light generator 18 on one side of the CCD camera 17 (which can be a sodium light source), and the CCD camera 17 and the light generator 18 are arranged on the monitoring chamber 3, The third monitoring device 7 in the present invention is a testing system using Newton's ring method. In the present invention, the third monitoring device 7 is used to test the warpage of the array substrate after cleaning, and feedback and adjust the cleaning process.

The above are only preferred embodiments of the present invention, and are not intended to limit the embodiments and protection scope of the present invention. For those skilled in the art, they should be aware of the equivalent replacement and Solutions obtained by obvious changes shall all be included in the protection scope of the present invention.

Claims (8)

1. A semiconductor cleaning device with an on-line monitoring function, characterized in that it comprises: a cleaning chamber (1), a cleaning chamber (1) arranged in the cleaning chamber (1) and used for cleaning an array substrate after etching A device (2), a monitoring chamber (3), an air extraction device (4), a first monitoring device (5) for monitoring the appearance and surface roughness of the array substrate after cleaning, and a first monitoring device (5) for monitoring the array substrate after cleaning A second monitoring device (6) for crystal phase change on the wafer surface, a third monitoring device (7) for monitoring the warpage change of the surface of the array substrate after cleaning, and a conveying device (8) for conveying the array substrate, the The cleaning device (2) and the monitoring chamber (3) are sequentially communicated with the etching chamber, the air inlet of the air extraction device (4) is communicated with the monitoring chamber (3), and the first monitoring device ( 5) and the second monitoring device (6) are arranged on the monitoring chamber (3), and the third monitoring device (7) is arranged in the monitoring chamber (3). 2. The semiconductor cleaning device according to claim 1, wherein the cleaning device (2) comprises a cleaning pool (9) for carrying the etched array substrate and a cleaning pool (9) located above the cleaning pool (9). and a cleaning nozzle (10) used for cleaning the array substrate in the cleaning tank (9), the cleaning nozzle (10) being arranged in the cleaning chamber (1). 3. The semiconductor cleaning device according to claim 2, characterized in that, the cleaning device (2) further comprises a temperature control table (11) for heating and controlling the temperature of the cleaning tank (9), the cleaning The pool (9) is seated on the temperature control table (11), and the temperature control table (11) is fixed on the conveying device (8). 4 . The semiconductor cleaning device according to claim 1 , wherein the first monitoring device ( 5 ) comprises a lens structure ( 12 ) and an electron generating structure ( 13 ), and the lens structure ( 12 ) is provided in the On the electron generating structure (13), the electron generating structure (13) is fixed on the monitoring chamber (3). 5 . The semiconductor cleaning device according to claim 4 , wherein the first monitoring device ( 5 ) further comprises a two-axis sliding table ( 14 ), and the two-axis sliding table ( 14 ) is arranged on the monitoring device. 6 . At the top of the chamber (3), the electron generating structure (13) is arranged on the longitudinal sliding table in the two-axis sliding table (14). 6. The semiconductor cleaning device according to claim 1, wherein the second monitoring device (6) comprises an X-ray generator (15) and an X-ray detector (16), the X-ray generator ( 15) and the X-ray detector (16) are fixed on the monitoring chamber (3). 7. The semiconductor cleaning device according to claim 1, wherein the third monitoring device (7) comprises a CCD camera (17) and a light generator (18) on one side of the CCD camera (17) ), the CCD camera (17) and the light generator (18) are arranged on the monitoring chamber (3). 8. The monitoring system according to claim 1, characterized in that, the air extraction device (4) is a condensate pump.

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