CN111198054B - A SiC pressure sensor - Google Patents
A SiC pressure sensor Download PDFInfo
- Publication number
- CN111198054B CN111198054B CN201811365211.XA CN201811365211A CN111198054B CN 111198054 B CN111198054 B CN 111198054B CN 201811365211 A CN201811365211 A CN 201811365211A CN 111198054 B CN111198054 B CN 111198054B
- Authority
- CN
- China
- Prior art keywords
- sic
- pressure
- pressure sensor
- piezoresistive
- stress
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses a SiC pressure sensor, in the technical scheme of the SiC pressure sensor, on one hand, a piezoresistive strip is arranged in a second region, the piezoresistive strip can be positioned in a region near an opening edge of a pressure cavity corresponding to a pressure-bearing diaphragm like the existing SiC pressure sensor, so that the output voltage is maximized, on the other hand, a stress adjusting part is arranged, one part of the stress adjusting part is positioned in the second region, and the other part of the stress adjusting part is positioned in a peripheral region, so that the stress of the pressure-bearing diaphragm can be adjusted, the flatness of the pressure-bearing diaphragm in the middle part is ensured, and the problem of pressure attenuation of the SiC pressure sensor in the region near the opening edge is solved.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a SiC pressure sensor.
Background
SiC materials are increasingly used in the field of semiconductor devices because of their excellent physicochemical properties. The traditional Si-based microsensor has the problems of application environment deficiency and performance deficiency due to the limitation of material properties. In the field of MEMS (micro electro mechanical system) sensors, SiC materials are utilized to manufacture various MEMS sensors which can work in severe environments such as high temperature (more than 500 ℃), strong corrosion, strong radiation and the like, and the problems can be avoided and improved. In particular, the SiC pressure sensor for high temperature environments can supplement the market vacancy and demand of the conventional Si-based MEMS sensor for high temperature pressure sensing above 500 ℃.
SiC pressure sensors are mainly classified into two types, α -SiC (hexagonal system) pressure devices and β -SiC (cubic system) pressure devices, according to the material. The piezoresistive type SiC pressure sensor is most widely used, and in the piezoresistive type SiC pressure sensor, in order to maximize an output voltage, a piezoresistive strip is generally disposed in a region near an opening edge line of a pressure-bearing diaphragm corresponding to a pressure chamber.
At present, SiC piezoresistive pressure sensors made of alpha-SiC materials or beta-SiC materials have the problem of pressure attenuation in the area near the opening edge line.
Disclosure of Invention
In order to solve the problems, the technical scheme of the invention provides the SiC pressure sensor, which avoids the problem of pressure attenuation of the SiC pressure sensor in the area near the opening edge line.
In order to achieve the above purpose, the invention provides the following technical scheme:
a SiC pressure sensor, the SiC pressure sensor comprising:
a SiC substrate having opposing first and second surfaces, the first surface having a pressure cavity therein, the pressure cavity having a depth less than a thickness of the SiC substrate;
a pressure-bearing diaphragm covering the first surface;
the stress adjusting parts are positioned on one side, away from the SiC substrate, of the pressure-bearing membrane, in the direction perpendicular to the first surface, each stress adjusting part covers a part of opening side lines of the pressure cavity, and the stress adjusting parts are uniformly arranged on the opening side lines.
Preferably, in the SiC pressure sensor, two piezoresistive strips are arranged on one side of the pressure-bearing membrane, which is away from the SiC substrate;
in a direction perpendicular to the first surface, the pressure-bearing membrane includes a middle portion facing the pressure chamber and a peripheral portion surrounding the middle portion, the middle portion including a first region and a second region surrounding the first region;
the piezoresistive strips are located in the second region, the first region is located between the two piezoresistive strips, and the two piezoresistive strips are symmetrically arranged.
Preferably, in the SiC pressure sensor, the pressure-bearing membrane is a P-type doped first SiC membrane layer, and the first SiC membrane layer covers the first surface;
the piezoresistive strip is N-type doped SiC and is arranged on the surface of one side, away from the SiC substrate, of the first SiC membrane layer;
the surface of the piezoresistive strip is covered with an insulating medium layer, the surface of the insulating medium layer is provided with a metal electrode, and the metal electrode is electrically connected with the piezoresistive strip through a through hole penetrating through the insulating medium layer.
Preferably, in the SiC pressure sensor, the stress adjustment part and the piezoresistive strip are simultaneously prepared from a second SiC film layer doped with N-type.
Preferably, in the SiC pressure sensor described above, the stress adjustment portion and the metal electrode are simultaneously prepared from a metal layer.
Preferably, in the SiC pressure sensor described above, the pressure chamber is a circular groove.
Preferably, in the above SiC pressure sensor, the depth of the circular groove is 5 μm to 30 μm, inclusive.
Preferably, in the SiC pressure sensor, the SiC pressure sensor includes 4 stress adjustment units.
Preferably, in the SiC pressure sensor described above, the pressure-bearing diaphragm includes an annular region covering a side line of the opening, the annular region having 4 openings equally dividing the annular region into 4 separate sub-regions;
the two opposite openings are internally provided with one piezoresistive strip respectively, and each sub-area is internally provided with one stress adjusting part.
Preferably, in the SiC pressure sensor, the pressure-bearing diaphragm includes an annular region covering a side line of the opening, and the 4 stress adjustment portions are located in the annular region and are centrosymmetric with respect to a center of the annular region.
As can be seen from the above description, the SiC pressure sensor provided in the technical solution of the present invention includes: a SiC substrate having opposing first and second surfaces, the first surface having a pressure cavity therein, the pressure cavity having a depth less than a thickness of the SiC substrate; a pressure-bearing diaphragm covering the first surface; the stress adjusting parts are positioned on one side, away from the SiC substrate, of the pressure-bearing membrane, in the direction perpendicular to the first surface, each stress adjusting part covers a part of opening side lines of the pressure cavity, and the stress adjusting parts are uniformly arranged on the opening side lines.
Therefore, in the SiC pressure sensor provided in the technical solution of the present invention, the pressure-bearing diaphragm has a stress adjustment portion, on one hand, the piezoresistive strip is disposed in the second region, so that the piezoresistive strip can be located in a region near an opening edge of the pressure chamber corresponding to the pressure-bearing diaphragm, as in the existing SiC pressure sensor, to maximize the output voltage, and on the other hand, the stress adjustment portion is disposed, a part of the stress adjustment portion is located in the second region, and another part is located in the peripheral region, so that the stress of the pressure-bearing diaphragm can be adjusted, the flatness of the pressure-bearing diaphragm in the middle portion is ensured, and the problem of pressure attenuation of the SiC pressure sensor in the region near the opening edge is avoided.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a top view of a prior art SiC pressure sensor;
FIG. 2 is a sectional view taken along line P-P' of FIG. 1;
FIG. 3 is a cross-sectional view taken along line Q-Q' of FIG. 1;
FIG. 4 is an enlarged fragmentary view of a corresponding rectangular dashed box portion of the SiC pressure sensor of FIG. 1;
FIG. 5 is a stress variation curve in a prior art piezoresistive SiC pressure sensor;
fig. 6 is a top view of a SiC pressure sensor provided in an embodiment of the present invention;
FIG. 7 is a sectional view taken along the line M-M' of FIG. 6;
FIG. 8 is a sectional view in the direction N-N' of FIG. 6;
FIG. 9 is an enlarged fragmentary view of a corresponding rectangular dashed box portion of the SiC pressure sensor of FIG. 6;
fig. 10 is a graph of stress variation in a SiC pressure sensor according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1 to 4, fig. 1 is a plan view of a conventional SiC pressure sensor, fig. 2 is a sectional view of fig. 1 in a P-P 'direction, fig. 3 is a sectional view of fig. 1 in a Q-Q' direction, and fig. 4 is a partial enlarged view of a rectangular dotted-line box portion of the SiC pressure sensor shown in fig. 1.
The SiC pressure sensor shown includes a SiC substrate 11, and a pressure chamber 12 is provided in one surface of the SiC substrate 11. The surface is covered with a pressure-bearing film 14. In a three-dimensional rectangular coordinate system O-XYZ, the surface is parallel to the XY plane and the Z axis is perpendicular to the surface.
As described in the background, to maximize the output voltage, the piezoresistive strips 13 are typically placed in the vicinity of the open perimeter 16 of the pressure-bearing diaphragm 14 corresponding to the pressure chamber 12. At present, piezoresistive SiC piezoresistive pressure regulators made of two materials, namely alpha-SiC and beta-SiC, have two main defects in stress distribution of a pressure-bearing diaphragm 14:
1) after the corresponding piezoresistive strips 13 are manufactured on the edge positions of the pressure-bearing diaphragm 14 by the beta-SiC, stress attenuation in a certain area range is generated on the edge of the pressure-bearing diaphragm 14 corresponding to the pressure cavity 12 by the introduction of the piezoresistive strips 13. The stress attenuation region can greatly reduce the output voltage;
2) due to the hexagonal characteristic of the alpha-SiC, when the pressure-bearing membrane 14 is manufactured without the pressure resistance strip 13, the stress attenuation of the area, corresponding to the opening side line 16 of the pressure cavity 12, of the pressure-bearing membrane 14 already exists, and after the pressure-bearing membrane 14 is continuously manufactured with the pressure resistance strip 13, the stress attenuation of the area, corresponding to the opening side line 16, is increased.
Referring to fig. 5, fig. 5 is a stress variation curve of a conventional piezoresistive SiC pressure sensor, and two dashed oval regions in fig. 5 respectively show stress curves of two piezoresistive strips 13 corresponding to regions near an opening edge line 16 of a pressure chamber 12, and as can be seen from fig. 5, a pressure attenuation problem exists in the region near the opening edge line 16 of the corresponding pressure chamber 12, as shown in a position in the diagram a, which may cause inaccuracy of parameter performances such as output voltage. In FIG. 5, the horizontal axis represents the distance between piezoresistive strip 13 and opening edge line 16 in μm, and the vertical axis represents stress in Pa (or N/m)2)。
Based on the above problem, in the SiC pressure sensor provided in the embodiments of the present invention, the pressure-bearing diaphragm has a stress adjustment portion, a part of the stress adjustment portion is located in the second region, and another part of the stress adjustment portion is located in the peripheral region, so that the stress of the pressure-bearing diaphragm can be adjusted, and the flatness of the pressure-bearing diaphragm at the middle portion is ensured, thereby avoiding the problem of pressure attenuation of the SiC pressure sensor.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Referring to fig. 6 to 9, fig. 6 is a top view of a SiC pressure sensor according to an embodiment of the present invention, fig. 7 is a sectional view of fig. 6 in a direction M-M ', fig. 8 is a sectional view of fig. 6 in a direction N-N', and fig. 9 is a partially enlarged view of a rectangular dotted square portion of the SiC pressure sensor shown in fig. 6.
The SiC pressure sensor includes: a SiC substrate 21, the SiC substrate 21 having opposing first and second surfaces, the first surface having a pressure cavity 22 therein, the depth of the pressure cavity 22 being less than the thickness of the SiC substrate 21; a pressure-bearing diaphragm 24, said pressure-bearing diaphragm 24 covering said first surface; a plurality of stress adjustment portions 25, the stress adjustment portions 25 being located on a side of the pressure-bearing diaphragm 24 facing away from the SiC substrate 21, each of the stress adjustment portions 25 covering a part of an opening edge line 26 of the pressure chamber 22 in a direction perpendicular to the first surface, and the plurality of stress adjustment portions 25 being uniformly arranged on the opening edge line 26. And setting a three-dimensional rectangular coordinate system O-XYZ, wherein the first surface and the second surface are parallel to the XY plane. The direction perpendicular to the first surface is parallel to the Z-axis.
In the SiC pressure sensor, two piezoresistive strips 23 are arranged on one side of the pressure-bearing diaphragm 24, which is far away from the SiC substrate 21. As shown in fig. 7, the pressure-bearing diaphragm 24 includes a middle portion 241 facing the pressure chamber 22 and a peripheral portion 242 surrounding the middle portion 241 in a direction perpendicular to the first surface. The middle portion 241 includes a first region 243 and a second region 244 surrounding the first region 243; the piezoresistive strips 23 are located in the second region 244, the first region 243 is located between two piezoresistive strips 23, and the two piezoresistive strips 23 are symmetrically arranged.
The two piezoresistive strips 23 are identical in shape and symmetrically arranged on two sides of the first region 243, so that the acting force of the piezoresistive strips 23 on the pressure-bearing membrane 24 is uniformly distributed, stress concentration in a certain region is avoided, and the problem of stress attenuation of the pressure-bearing membrane 24 in the region of the opening side line 26 is reduced to a certain extent.
In the SiC pressure sensor, the pressure-bearing membrane 24 is a first P-type doped SiC membrane layer, and the first SiC membrane layer covers the first surface; the piezoresistive strip 23 is N-type doped SiC, and the piezoresistive strip 23 is arranged on a surface of one side of the first SiC film layer, which faces away from the SiC substrate 21; the surface of the piezoresistive strip 23 is covered with an insulating medium layer, the surface of the insulating medium layer is provided with a metal electrode, and the metal electrode is electrically connected with the piezoresistive strip 23 through a via hole penetrating through the insulating medium layer. Each piezoresistive strip 23 is individually connected with one metal electrode.
The insulating dielectric layer, the via hole and the metal electrode are not shown in the drawings of the embodiments of the present invention. The forming mode and the pattern structure of the structures can refer to the existing SiC pressure sensor, and are not described in detail herein.
In one embodiment, the stress modifier portion 25 is fabricated simultaneously with the piezoresistive strips 23 from a second SiC film layer that is doped N-type. In this way, the stress adjusting part 25 is formed at the same time as the piezoresistive strip 23 is formed, the simultaneous preparation of the stress adjusting part 25 and the piezoresistive strip 23 can be realized only by arranging the pattern structure of the second SiC film layer without changing the manufacturing process of the SiC pressure sensor, the manufacturing process is simple, and the manufacturing cost is low.
In another mode, the stress adjustment portion 25 and the metal electrode are simultaneously formed by a metal layer. In this mode, the stress adjustment portion 25 is formed at the same time as the metal electrode is formed, and the simultaneous preparation of the stress adjustment portion 25 and the metal electrode can be realized only by providing a metal layer pattern structure without changing the manufacturing process of the SiC pressure sensor, so that the manufacturing process is simple and the manufacturing cost is low.
In the SiC pressure sensor, the pressure chamber 22 is a circular groove. By adopting the circular groove as the pressure cavity, the opening sideline 26 can be circular, the pressure in the area of the opening sideline 26 can be better dispersed, and the problem of pressure attenuation of the SiC piezoresistive pressure sensor in the area near the opening sideline 26 can be avoided or completely overcome to a certain extent.
In the SiC pressure sensor, the depth of the circular groove is 5-30 μm, inclusive. For example, the depth of the circular groove may be 20 μm or 25 μm. In the SiC pressure sensor according to the embodiment of the present invention, the stress adjusting portion 25 is provided to buffer and disperse the stress in the area near the opening edge line 26, so as to avoid stress concentration, and to ensure the flatness of the pressure-bearing diaphragm 24, so that the SiC pressure sensor according to the embodiment of the present invention can form the pressure chamber 22 having a larger diameter and a deeper depth, and improve the detection accuracy and sensitivity thereof, compared with the prior art.
The SiC pressure sensor includes 4 stress adjustment units 25. The 4 stress adjustment portions 25 are uniformly provided on the opening edge line 26. Stress is concentrated on each of the stress adjustment portions 25, and if the number of the stress adjustment portions 25 is small, a good stress dispersion buffering effect cannot be achieved.
In the SiC pressure sensor, as shown in fig. 6, the pressure-bearing diaphragm 24 includes an annular region covering the opening edge line 26, the annular region having 4 openings that divide the annular region equally into 4 separate sub-regions 251; one of the piezoresistive strips 23 is disposed in each of two opposite openings, and one of the stress adjustment portions 25 is disposed in each of the sub-regions 251.
Optionally, 4 stress adjusting portions 25 are located in the annular region, and are symmetric about the center of the circle of the annular region, so that the stress borne by the four stress adjusting portions 25 is uniformly distributed, and the problem of pressure attenuation of the SiC piezoresistive pressure sensor in the region near the opening edge line 26 is avoided or completely overcome to some extent.
The width of the stress adjustment portion 25 in a direction from the middle portion 241 toward the peripheral portion 242 is in a range of 80 μm to 100 μm.
The widths of two parts of the stress adjusting part 25 located at two sides of the opening side line 26 may be the same, or the width of a part located at the outer side of the opening side line 26 is larger than the width of a part located at the inner side of the opening side line 26, so as to better solve the problem of stress attenuation in a region not near the opening side line 26.
As shown in fig. 7 and 9, the piezoresistive strips 23 are provided with an auxiliary portion 27 on the same layer as the piezoresistive strips 23 on each side in a direction from the middle portion 241 to the peripheral portion 242.
The piezoresistive strip 23 is made of a second SiC film layer, and due to the fact that the size of the piezoresistive strip 23 is small, when the piezoresistive strip 23 is made through etching of the second SiC film layer, the problem of over-etching is prone to occur, and the appearance of the piezoresistive strip 23 is poor.
By adding the auxiliary part 27, the pattern of the piezoresistive strip 23 can be better protected during the etching process, and the "load effect" in the etching process is realized, because the redundant material is added around the pattern region of the piezoresistive strip 23 (i.e. the redundant material is reserved as the second SiC film layer of the auxiliary part 27), so that the etching morphology of the pattern region of the piezoresistive strip 23 can be protected, and the device performance is improved. Therefore, in the implementation of the present invention, the stress adjustment portion is preferably formed by using the second SiC film layer, which can protect the patterned region of the piezoresistive strips 23 while solving the problem of stress attenuation.
Referring to fig. 10, fig. 10 shows a stress variation curve in the SiC pressure sensor according to the embodiment of the present invention, and two dotted oval regions in fig. 10 respectively show stress curves of two piezoresistive strips 23 corresponding to regions near the opening edge 26 of the pressure chamber 22, as can be seen from a comparison of the pressure curves shown in fig. 10 and fig. 5, in the SiC pressure sensor according to the embodiment of the present invention, the problem of pressure attenuation existing in the regions near the opening edge 26 is eliminated, and accuracy and reliability of parameters such as output voltage are ensured.
As can be seen from the above description, in the SiC pressure sensor according to the embodiment of the present invention, the stress adjusting portion 25 can be formed at the same time as the original structure without changing the manufacturing process, so that the problem of stress attenuation of the pressure-bearing diaphragm 24 corresponding to the region near the opening edge line 26 is solved, the maximum state of the output voltage can be maintained, the manufacturing process is simple, and the manufacturing cost is low.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in an article or device that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811365211.XA CN111198054B (en) | 2018-11-16 | 2018-11-16 | A SiC pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811365211.XA CN111198054B (en) | 2018-11-16 | 2018-11-16 | A SiC pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111198054A CN111198054A (en) | 2020-05-26 |
| CN111198054B true CN111198054B (en) | 2021-10-22 |
Family
ID=70743599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811365211.XA Active CN111198054B (en) | 2018-11-16 | 2018-11-16 | A SiC pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111198054B (en) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100528636B1 (en) * | 2004-04-26 | 2005-11-15 | (주)센서시스템기술 | Pressure sensor and fabricating method thereof |
| US9010200B2 (en) * | 2012-08-06 | 2015-04-21 | Amphenol Thermometrics, Inc. | Device for measuring forces and method of making the same |
| US9733139B2 (en) * | 2014-05-02 | 2017-08-15 | Silicon Microstructures, Inc. | Vertical membranes for pressure sensing applications |
| JP2017509860A (en) * | 2014-07-29 | 2017-04-06 | シリコン マイクロストラクチャーズ， インコーポレイテッドＳｉｌｉｃｏｎ Ｍｉｃｒｏｓｔｒｕｃｔｕｒｅｓ， Ｉｎｃ． | PRESSURE SENSOR HAVING CAP-DEFINED MEMBRANE |
| US10060813B2 (en) * | 2015-09-29 | 2018-08-28 | Rosemount Inc. | High over-pressure capable silicon die pressure sensor |
| US9783411B1 (en) * | 2016-11-11 | 2017-10-10 | Rosemount Aerospace Inc. | All silicon capacitive pressure sensor |
| CN106768517A (en) * | 2016-12-02 | 2017-05-31 | 北京时代民芯科技有限公司 | A kind of highly reliable high-temp pressure sensor and its manufacture method |
-
2018
- 2018-11-16 CN CN201811365211.XA patent/CN111198054B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN111198054A (en) | 2020-05-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8816454B2 (en) | Component having a micromechanical microphone pattern | |
| CN104034454A (en) | Multi-physical measurement sensor chip and production method thereof | |
| WO2013073506A1 (en) | Capacitance type pressure sensor, method for manufacturing same, and input device | |
| CN113316052B (en) | MEMS microphone chip with dustproof structure and manufacturing method thereof | |
| KR102209244B1 (en) | Capacitive pressure sensor and input device | |
| CN110113702B (en) | A kind of manufacturing method of MEMS structure | |
| CN107192969A (en) | Magnetic Sensor and its manufacture method | |
| US10547954B2 (en) | MEMS microphone and method for manufacturing the same | |
| JP2016138797A (en) | Micro heater and sensor | |
| CN111198054B (en) | A SiC pressure sensor | |
| JPWO2022102273A5 (en) | ||
| CN109341905A (en) | A kind of capacitive pressure sensor and preparation method thereof | |
| TWI416739B (en) | Semiconductor type strain gauge and manufacturing method thereof | |
| JP2019036688A5 (en) | Semiconductor device | |
| CA2929270C (en) | High temperature flexural mode piezoelectric dynamic pressure sensor | |
| JP2009074977A5 (en) | ||
| JP6127625B2 (en) | Capacitance type pressure sensor and input device | |
| CN107421663A (en) | Pressure sensor device with anchors for mold shrinkage and high sensitivity | |
| CN113557578A (en) | Electrical component | |
| US8033178B2 (en) | Pressure-measuring cell | |
| CN214702570U (en) | Pressure sensor | |
| CN208921324U (en) | A kind of capacitance pressure transducer, | |
| JP6852579B2 (en) | Pressure sensor | |
| CN112880884B (en) | Pressure sensor and method for manufacturing the same | |
| KR102896430B1 (en) | Pressure sensor device with asymmetrical channel structure and manufacturing method of thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |