CN111179891A - Drive circuit based on buzzer detects with temperature - Google Patents
Drive circuit based on buzzer detects with temperature Download PDFInfo
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- CN111179891A CN111179891A CN202010056428.3A CN202010056428A CN111179891A CN 111179891 A CN111179891 A CN 111179891A CN 202010056428 A CN202010056428 A CN 202010056428A CN 111179891 A CN111179891 A CN 111179891A
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- G—PHYSICS
- G10—MUSICAL INSTRUMENTS; ACOUSTICS
- G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
- G10K9/00—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers
- G10K9/12—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers electrically operated
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
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Abstract
本发明提供一种基于蜂鸣器带温度检测的驱动电路，包括限流器件、二极管D1、放大器、频率发生电路、栅极控制电路、驱动NMOS管，其中V2、Y、F、G为信号线，V1为参考电压信号线，限流器件一端连接地线，另一端接V2，二极管D1正极接电源线，二极管D1负极接V2，放大器负输入端接V2，正输入端接V1，输出端接Y，频率发生电路输出接F，栅极控制电路一个输入端接F、另一个输入端接Y、输出接G，驱动NMOS管栅极接G、漏极接输出OUT、源极接地线、衬底接地线。当芯片温度过高时关断驱动NMOS管以降低功耗，本电路具有可靠性高和成本低的优点。
The invention provides a drive circuit with temperature detection based on a buzzer, including a current limiting device, a diode D1, an amplifier, a frequency generating circuit, a gate control circuit, and a driving NMOS tube, wherein V2, Y, F, and G are signal lines , V1 is the reference voltage signal line, one end of the current limiting device is connected to the ground line, the other end is connected to V2, the positive electrode of the diode D1 is connected to the power line, the negative electrode of the diode D1 is connected to V2, the negative input end of the amplifier is connected to V2, the positive input end is connected to V1, and the output end is connected to Y, the output of the frequency generating circuit is connected to F, one input of the gate control circuit is connected to F, the other input is connected to Y, the output is connected to G, the gate of the driving NMOS transistor is connected to G, the drain is connected to the output OUT, the source is grounded, and the lining Bottom ground wire. When the chip temperature is too high, the driving NMOS transistor is turned off to reduce power consumption. This circuit has the advantages of high reliability and low cost.
Description
Technical Field
The invention relates to the field of buzzer circuits, in particular to a buzzer driving circuit.
Background
As shown in fig. 6, the conventional buzzer circuit is composed of a frequency generation circuit and a driving tube, and when the temperature of the chip is too high, the circuit has the disadvantages that the power consumption is not reduced, the chip is damaged or the buzzer or even the whole system is damaged.
Disclosure of Invention
The invention provides a driving circuit with temperature detection based on a buzzer, which aims to overcome the defect that a chip is damaged or the buzzer or even the whole system is damaged when the temperature of the chip is overhigh in the traditional driving circuit of the buzzer.
In order to solve the above technical problems, the present invention provides a buzzer-based driving circuit with temperature detection, comprising a current limiting device, a diode D1, an amplifier, a frequency generating circuit, a gate control circuit, and a driving NMOS, wherein V1 is a reference voltage signal line, one end of the current limiting device is connected to a ground line, the other end of the current limiting device is connected to a signal line V2, the anode of the diode D1 is connected to a power line, the cathode of the diode D1 is connected to V2, the negative input end of the amplifier is connected to a signal line V2, the positive input end of the amplifier is connected to a signal line V1, the output end of the amplifier is connected to a signal line Y, the frequency generating circuit outputs a signal line F, one input end of the gate control circuit is connected to a signal line F, the other input end of the gate control circuit is connected to a signal line Y, the gate of the gate control, the source electrode of the drive NMOS tube is connected with the grounding wire, and the substrate of the drive NMOS tube is connected with the grounding wire.
With reference to fig. 1, the circuit parameters are properly designed, if the chip temperature is in the normal range, so that the voltage of the signal line V1 is greater than the voltage of the signal line V2, the output Y of the amplifier is at a high level, which indicates that the chip temperature is normal, and if the chip temperature is too high, since the diode forward voltage drop is a negative temperature coefficient, so that the voltage of the signal line V2 is greater than the voltage of the signal line V1, the output Y of the amplifier is at a low level, which indicates that the chip temperature is too high; it can be seen that, in the connection of the signal line V1 and the signal line V2 shown in fig. 1, the output Y of the amplifier is at a low level, which indicates that the chip temperature is too high. If the signal line V1 and the signal line V2 are connected to the positive input end and the negative input end of the amplifier in a reversed position, namely the signal line V1 is connected with the negative input end of the amplifier, the signal line V2 is connected with the positive input end of the amplifier, and the connection relations between the signal line V1 and the signal line V2 and other devices and modules are unchanged, the output Y of the amplifier is high level, which indicates that the temperature of the chip is too high. When the output of the amplifier indicates that the temperature of the chip is normal, the grid control circuit enables the output signal F of the frequency generation circuit to normally pass through, and drives the NMOS tube to normally drive the buzzer; when the output of the amplifier shows that the temperature of the chip is too high, the grid control circuit outputs a signal line G to cut off the drive NMOS tube, so that the power consumption of the circuit is reduced, and the chip and the system are prevented from being damaged. The circuit is simple to realize and has the advantages of high reliability and low cost.
Preferably, the substrate of the drive NMOS tube is connected with a ground wire or connected with the source electrode of the drive NMOS tube.
Preferably, the current limiting device may be a resistor, or may also be an active device such as a current source or a MOS transistor, or a combination thereof.
Preferably, the diode D1 may be replaced by a device with temperature coefficient, such as a series-parallel combination of more than one diode, or a diode-connected MOS transistor, or a series-parallel combination of more than one diode-connected MOS transistor, or a diode-connected triode, or a series-parallel combination of more than one diode-connected triode.
Preferably, the driving NMOS transistor may be replaced by an NPN transistor, that is, the NPN transistor is used as the driving transistor of the buzzer.
The invention has the following beneficial effects: according to the driving circuit with the temperature detection function based on the buzzer, the NMOS tube is turned off when the temperature of the chip is too high, so that the power consumption of the chip is reduced, the chip is prevented from being damaged, or the buzzer or even the whole system is prevented from being damaged.
Drawings
Fig. 1 is a schematic structural diagram of a buzzer-based driving circuit with temperature detection.
Fig. 2 is a driving circuit based on temperature detection of a buzzer belt according to a first embodiment of the invention.
Fig. 3 is a driving circuit based on temperature detection of a buzzer belt according to a second embodiment of the invention.
Fig. 4 is a driving circuit based on temperature detection of a buzzer belt according to a third embodiment of the invention.
Fig. 5 is a driving circuit based on temperature detection of a buzzer belt according to a fourth embodiment of the present invention.
Fig. 6 is a schematic diagram of the background art.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments.
Referring to fig. 1, the present invention provides a driving circuit based on temperature detection of a buzzer, including a current limiting device, a diode D1, an amplifier, a frequency generating circuit, a gate control circuit, and a driving NMOS, wherein V1 is a reference voltage signal line, one end of the current limiting device is connected to a ground, the other end of the current limiting device is connected to a signal line V2, the anode of the diode D1 is connected to a power line, the cathode of the diode D1 is connected to V2, the negative input end of the amplifier is connected to a signal line V2, the positive input end of the amplifier is connected to a signal line V1, the output end of the amplifier is connected to a signal line Y, the frequency generating circuit outputs a signal line F, one input end of the gate control circuit is connected to a signal line F, the other input end of the gate control circuit is connected to a signal line Y, the gate of the gate control circuit is connected to a signal line G, the substrate of the drive NMOS tube is connected with a grounding wire.
With reference to fig. 1, the circuit parameters are properly designed, if the chip temperature is in the normal range, so that the voltage of the signal line V1 is greater than the voltage of the signal line V2, the output Y of the amplifier is at a high level, which indicates that the chip temperature is normal, and if the chip temperature is too high, since the diode forward voltage drop is a negative temperature coefficient, so that the voltage of the signal line V2 is greater than the voltage of the signal line V1, the output Y of the amplifier is at a low level, which indicates that the chip temperature is too high; it can be seen that, in the connection of the signal line V1 and the signal line V2 shown in fig. 1, the output Y of the amplifier is at a low level, which indicates that the chip temperature is too high. If the signal line V1 and the signal line V2 are connected to the positive input end and the negative input end of the amplifier in a reversed position, namely the signal line V1 is connected with the negative input end of the amplifier, the signal line V2 is connected with the positive input end of the amplifier, and the connection relations between the signal line V1 and the signal line V2 and other devices and modules are unchanged, the output Y of the amplifier is high level, which indicates that the temperature of the chip is too high. When the output of the amplifier indicates that the temperature of the chip is normal, the grid control circuit enables the output signal F of the frequency generation circuit to normally pass through, and drives the NMOS tube to normally drive the buzzer; when the output of the amplifier shows that the temperature of the chip is too high, the grid control circuit outputs a signal line G to cut off the drive NMOS tube, so that the power consumption of the circuit is reduced, and the chip and the system are prevented from being damaged.
A first embodiment of the present invention, as shown in fig. 2, in conjunction with fig. 1, the current limiting device in fig. 1 is a resistor R1 in fig. 2, and the operation principle is the same as that in fig. 1.
A second embodiment of the present invention is shown in fig. 3, and with reference to fig. 1, the current limiting device in fig. 1 is a resistor R1 in fig. 3, and the diode D1 in fig. 1 is replaced by a PNP transistor Q1 in fig. 3, and the operation principle is the same as that in fig. 1.
The third embodiment of the present invention, as shown in fig. 4, comprises a current limiting device, an NMOS transistor N1, an amplifier, a frequency generating circuit, a gate control circuit, a driving NMOS transistor, the power supply circuit comprises a voltage reference signal line V1, a current limiting device, a signal line V2, an NMOS tube N1 drain electrode, a grid electrode, an NMOS tube N1 source electrode, a substrate, a signal line V2, an amplifier negative input end, a signal line V2, an amplifier positive input end, a signal line V1, an amplifier output end, a signal line Y, a frequency generation circuit output signal line F, a grid control circuit output signal line Y, a grid control circuit output signal line G, a drive NMOS tube grid electrode, a drive NMOS tube drain electrode, an output OUT, a drive NMOS tube source electrode, and a drive NMOS tube substrate.
With reference to fig. 4, the circuit parameters are properly designed, if the chip temperature is in the normal range, so that the voltage of the signal line V2 is lower than the voltage of the signal line V1, the output Y of the amplifier is at a high level, which indicates that the chip temperature is normal, and if the chip temperature is too high, since the threshold voltage of the NMOS transistor is a negative temperature coefficient, so that the voltage of the signal line V2 is higher than the voltage of the signal line V1, the output Y of the amplifier is at a low level, which indicates that the chip temperature is too high; it can be seen that, in the connection of the signal line V1 and the signal line V2 shown in fig. 4, the output Y of the amplifier is at a low level, which indicates that the chip temperature is too high. If the signal line V1 and the signal line V2 are connected to the positive input end and the negative input end of the amplifier in a reversed position, namely the signal line V1 is connected with the negative input end of the amplifier, the signal line V2 is connected with the positive input end of the amplifier, and the connection relations between the signal line V1 and the signal line V2 and other devices and modules are unchanged, the output Y of the amplifier is high level, which indicates that the temperature of the chip is too high. When the output of the amplifier indicates that the temperature of the chip is normal, the grid control circuit enables the output signal F of the frequency generation circuit to normally pass through, and drives the NMOS tube to normally drive the buzzer; when the output of the amplifier shows that the temperature of the chip is too high, the grid control circuit outputs a signal line G to cut off the drive NMOS tube, so that the power consumption of the circuit is reduced, and the chip and the system are prevented from being damaged.
As shown in fig. 4 in conjunction with fig. 1, diode D1 in fig. 1 is replaced by NMOS transistor N1 in fig. 4, and the operation principle is similar to that of fig. 1.
In a fourth embodiment of the present invention, as shown in fig. 5, a resistor R1, a PMOS transistor P1, an amplifier, a frequency generation circuit, a gate control circuit, and a driving NMOS transistor, wherein V1 is a reference voltage signal line, one end of the resistor R1 is connected to a ground line, the other end of the resistor R1 is connected to a signal line V2, a source of a PMOS transistor P1 and a substrate are connected to a power line, a drain of the PMOS transistor P1 and a gate of the PMOS transistor are connected to the signal line V2, a negative input end of the amplifier is connected to the signal line V2, a positive input end of the amplifier is connected to the signal line V1, an output end of the amplifier is connected to the signal line Y, an output signal line F of the frequency generation circuit is connected to one input end of the gate control circuit, another input end of the gate control circuit is connected to the signal line Y, an output signal line G of the gate control.
With reference to fig. 5, the circuit parameters are properly designed, if the chip temperature is within the normal range, so that the voltage of the signal line V2 is lower than the voltage of the signal line V1, the output Y of the amplifier is at a high level, which indicates that the chip temperature is normal, and if the chip temperature is too high, since the absolute value of the threshold voltage of the PMOS transistor is a negative temperature coefficient, the voltage of the signal line V2 is higher than the voltage of the signal line V1, and the output Y of the amplifier is at a low level, which indicates that the chip temperature is too high; it can be seen that, in the connection of the signal line V1 and the signal line V2 shown in fig. 5, the output Y of the amplifier is at a low level, which indicates that the chip temperature is too high. If the signal line V1 and the signal line V2 are connected to the positive input end and the negative input end of the amplifier in a reversed position, namely the signal line V1 is connected with the negative input end of the amplifier, the signal line V2 is connected with the positive input end of the amplifier, and the connection relations between the signal line V1 and the signal line V2 and other devices and modules are unchanged, the output Y of the amplifier is high level, which indicates that the temperature of the chip is too high. When the output of the amplifier indicates that the temperature of the chip is normal, the grid control circuit enables the output signal F of the frequency generation circuit to normally pass through, and drives the NMOS tube to normally drive the buzzer; when the output of the amplifier shows that the temperature of the chip is too high, the grid control circuit outputs a signal line G to cut off the drive NMOS tube, so that the power consumption of the circuit is reduced, and the chip and the system are prevented from being damaged.
As shown in fig. 5 in conjunction with fig. 1, the current limiting device in fig. 1 is resistor R1 in fig. 5, and diode D1 in fig. 1 is replaced by PMOS transistor P1 in fig. 5.
In summary, the driving circuit with temperature detection based on the buzzer, provided by the invention, can turn off the driving tube to reduce power consumption when the temperature of the chip is too high, so as to prevent the chip and the system from being damaged.
The above description is only an example of the present invention, and is not intended to limit the present invention, and it is obvious to those skilled in the art that various modifications and variations can be made in the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010056428.3A CN111179891A (en) | 2020-01-22 | 2020-01-22 | Drive circuit based on buzzer detects with temperature |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010056428.3A CN111179891A (en) | 2020-01-22 | 2020-01-22 | Drive circuit based on buzzer detects with temperature |
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| CN111179891A true CN111179891A (en) | 2020-05-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202010056428.3A Pending CN111179891A (en) | 2020-01-22 | 2020-01-22 | Drive circuit based on buzzer detects with temperature |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111063329A (en) * | 2020-01-22 | 2020-04-24 | 无锡十顶电子科技有限公司 | Buzzer driving circuit with temperature detection function |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108109999A (en) * | 2018-01-16 | 2018-06-01 | 上海南麟电子股份有限公司 | Thermal-shutdown circuit, semiconductor devices and preparation method thereof |
| CN208946626U (en) * | 2018-10-16 | 2019-06-07 | 四川正鸿泰精密电子科技有限公司 | A kind of temperature control equipment that high energy conservation prevents injection molding from condensing |
| CN111063329A (en) * | 2020-01-22 | 2020-04-24 | 无锡十顶电子科技有限公司 | Buzzer driving circuit with temperature detection function |
| CN212135940U (en) * | 2020-01-22 | 2020-12-11 | 无锡天极芯科技有限公司 | Drive circuit based on buzzer detects with temperature |
-
2020
- 2020-01-22 CN CN202010056428.3A patent/CN111179891A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108109999A (en) * | 2018-01-16 | 2018-06-01 | 上海南麟电子股份有限公司 | Thermal-shutdown circuit, semiconductor devices and preparation method thereof |
| CN208946626U (en) * | 2018-10-16 | 2019-06-07 | 四川正鸿泰精密电子科技有限公司 | A kind of temperature control equipment that high energy conservation prevents injection molding from condensing |
| CN111063329A (en) * | 2020-01-22 | 2020-04-24 | 无锡十顶电子科技有限公司 | Buzzer driving circuit with temperature detection function |
| CN212135940U (en) * | 2020-01-22 | 2020-12-11 | 无锡天极芯科技有限公司 | Drive circuit based on buzzer detects with temperature |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111063329A (en) * | 2020-01-22 | 2020-04-24 | 无锡十顶电子科技有限公司 | Buzzer driving circuit with temperature detection function |
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Application publication date: 20200519 |