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CN111162362A - Double-ridge substrate integrated waveguide broadband magic T - Google Patents

Double-ridge substrate integrated waveguide broadband magic T Download PDF

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Publication number
CN111162362A
CN111162362A CN201911372362.2A CN201911372362A CN111162362A CN 111162362 A CN111162362 A CN 111162362A CN 201911372362 A CN201911372362 A CN 201911372362A CN 111162362 A CN111162362 A CN 111162362A
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skin layer
copper
copper skin
microwave dielectric
substrate integrated
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CN111162362B (en
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凌天庆
居军
林维涛
孙红兵
崔文耀
王佳
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CETC 14 Research Institute
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/12Coupling devices having more than two ports
    • H01P5/16Conjugate devices, i.e. devices having at least one port decoupled from one other port
    • H01P5/19Conjugate devices, i.e. devices having at least one port decoupled from one other port of the junction type
    • H01P5/20Magic-T junctions

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Abstract

本发明公开了双脊波导宽带魔T的多层电路,五层之间通过金属化孔互连,构成基片集成波导,第一层与第二层之间及第四层与第五层之间通过金属化孔互连,形成基片集成波导的双脊,第二层包含了渐变线过渡的输入输出微带端口,第四层包含了另一个输入端口,第三层通过阶梯变换或渐变线过度实现带状线输出。本发明相对于波导魔T尺寸小、重量轻、利于集成,相对于微带、带状线魔T带宽更宽,进一步提高阵面综合网络的集成度,展宽工作频带,实现阵面的小型化、轻量化。

Figure 201911372362

The invention discloses a multi-layer circuit of a double-ridged waveguide broadband magic T. The five layers are interconnected through metallized holes to form a substrate integrated waveguide. They are interconnected through metallized holes to form a double ridge of the substrate integrated waveguide. The second layer contains the input and output microstrip ports of the gradient line transition, the fourth layer contains another input port, and the third layer is transformed by steps or gradients. Line over-implemented stripline output. Compared with the waveguide magic T, the invention is small in size, light in weight, and easy to integrate, and has a wider bandwidth than the microstrip and stripline magic T, further improves the integration degree of the front integrated network, widens the working frequency band, and realizes the miniaturization of the front. , Lightweight.

Figure 201911372362

Description

Double-ridge substrate integrated waveguide broadband magic T
Technical Field
The invention belongs to the technical field of microwave antennas, and particularly relates to a design of an integrated broadband magic T.
Background
With the continuous improvement of the radar working bandwidth, the bandwidths of various devices of a radar feeder system also need to be widened, and the working frequency band also needs to be widened as an important component and a difference network for beam forming. The magic T is a core device of a sum-difference network, the design of the broadband magic T is mainly realized in a ridge waveguide mode, the size is large, the weight is heavy, and the working bandwidth of the magic T designed by microstrip lines and strip lines is narrow.
By utilizing the integrated design of the multilayer board technology, the bandwidth of the integrated hybrid multi-beam hybrid network can be widened, the size is reduced, the weight is reduced, the working bandwidth of the hybrid multi-beam.
Disclosure of Invention
The invention provides a double-ridge substrate integrated waveguide broadband magic T for solving the problems in the prior art, and adopts the following technical scheme for achieving the purpose.
The broadband magic T comprises: copper cortex, microwave dielectric slab, metallization hole, the copper cortex is the rectangle, has the gradual change line, and copper cortex and microwave dielectric slab form through integrated design manufacturing, and the metallization hole is arranged into certain interval and shape according to certain diameter, and the copper cortex is connected to the metallization hole.
The copper sheet and the microwave dielectric plate include: the microwave dielectric plate comprises a first copper sheet layer, a second copper sheet layer, a third copper sheet layer, a fourth copper sheet layer, a fifth copper sheet layer, a first microwave dielectric plate, a second microwave dielectric plate, a third microwave dielectric plate and a fourth microwave dielectric plate, wherein the first microwave dielectric plate is arranged between the first copper sheet layer and the second copper sheet layer, the second microwave dielectric plate is arranged between the second copper sheet layer and the third copper sheet layer, the third microwave dielectric plate is arranged between the third copper sheet layer and the fourth copper sheet layer, and the fourth microwave dielectric plate is arranged between the fourth copper sheet layer and the fifth copper sheet layer.
The metallized hole includes: the first metallization hole is connected with the first copper layer and the second copper layer, the second metallization hole is connected with the first copper layer and the third copper layer, the third metallization hole is connected with the fourth copper layer and the fifth copper layer, and the fourth metallization hole is connected with the first copper layer, the second copper layer, the fourth copper layer and the fifth copper layer.
Copper is spread to first copper skin layer large tracts of land, adopt coaxial interconnect as external interface, the impedance matching of second copper skin layer adoption gradual change line as input-output, the limit that adopts the rectangle is as the limit of a spine, the impedance matching of third copper skin layer adoption gradual change line or multistage ladder transform as the beam transmission, the stripline is connected to perpendicular transition hole and is realized signal surface output, fourth copper skin layer adopts the gradual change line as the impedance matching of input, the limit that adopts the rectangle is as the limit of another spine, contain another input port, the fifth copper skin layer, adopt the large tracts of land to spread the copper as shielding ground connection.
The first metalized holes and the third metalized holes are arranged in two rows and used as the edges of the ridges to form double ridges of the substrate integrated waveguide, and the fourth metalized holes are arranged in two rows and a circle.
The invention realizes the functions of broadband and difference, adopts multilayer microwave plates to integrate design by hot pressing or co-firing, widens the working frequency band, ensures the broadband of sum-beam signals by multistage impedance conversion, widens the working frequency bands of all channels, realizes high reliability, has the same thermal expansion coefficient of all materials, does not generate layering, is an integral product, improves the reliability of the product, realizes easy integration, belongs to a planar circuit, is easy to integrate and manufacture with other planar circuits, realizes light weight, adopts multilayer printed board integration lamination, avoids various interconnection structure accessories adopted in conventional integration, and reduces the integral weight.
Drawings
Fig. 1 is a perspective view of the present invention, fig. 2 is a side view of the present invention, fig. 3 is a first copper layer, fig. 4 is a second copper layer, fig. 5 is a third copper layer, fig. 6 is a fourth copper layer, fig. 7 is a fifth copper layer, fig. 8 is a first plated hole, fig. 9 is a second plated hole, fig. 10 is a third plated hole, and fig. 11 is a fourth plated hole.
The reference numbers are: 21-a first copper layer, 22-a second copper layer, 23-a third copper layer, 24-a fourth copper layer, 25-a fifth copper layer, 31-a first microwave dielectric plate, 32-a second microwave dielectric plate, 33-a third microwave dielectric plate, 34-a fourth microwave dielectric plate, 41-a first metalized hole, 42-a second metalized hole, 43-a third metalized hole and 44-a fourth metalized hole.
Detailed Description
The technical scheme of the invention is specifically explained in the following by combining the attached drawings.
An integral structure of a double-ridge substrate integrated waveguide broadband magic T is shown in figure 1, and is manufactured by integrally designing five layers of copper skins and four layers of microwave dielectric plates through high-temperature hot pressing or co-firing, prepreg hot pressing or co-firing aiming at ceramic materials, wherein the layers are interconnected through metallized holes, and the transmission of signals among different layers is realized through the metallized holes, so that the substrate integrated waveguide is formed.
The copper sheet layer and the microwave dielectric plate are spaced from each other, as shown in fig. 2, from top to bottom, the copper sheet layer comprises 21-a first copper sheet layer, 31-a first microwave dielectric plate, 22-a second copper sheet layer, 32-a second microwave dielectric plate, 23-a third copper sheet layer, 33-a third microwave dielectric plate, 24-a fourth copper sheet layer, 34-a fourth microwave dielectric plate, 25-a fifth copper sheet layer, 41-a first metallized hole penetrates through 21-the first copper sheet layer, 31-the first microwave dielectric plate, 22-a second copper sheet layer to connect 21-the first copper sheet layer and 22-the second copper sheet layer, 42-a second metallized hole penetrates through 21-the first copper sheet layer, 31-the first microwave dielectric plate, 22-the second copper sheet layer, 32-the second microwave dielectric plate, 23-a third copper sheet layer, connecting 21-a first copper layer and 23-a third copper layer, wherein 43-a third metallized hole penetrates through 24-a fourth copper layer, 34-a fourth microwave dielectric slab and 25-a fifth copper layer, connecting 24-the fourth copper layer and 25-the fifth copper layer, and 44-a fourth metallized hole penetrates through all the copper layers and the microwave dielectric slab, and connecting 21-the first copper layer, 22-the second copper layer, 24-the fourth copper layer and 25-the fifth copper layer.
A first copper sheath, shown in fig. 3, is extensively copper clad and interconnected to the output connector through a coaxial hole in the surface.
The second copper layer, as shown in fig. 4, implements impedance matching of the input and output signals through a gradient line, and implements the edge of one of the ridges by using a rectangular copper layer.
The third copper layer, as shown in fig. 5, achieves impedance matching and broadband characteristics with respect to beam signal transmission through multi-step transformation or a gradual change.
The fourth copper layer, as shown in fig. 6, implements impedance matching of the input signal through a gradient line, and implements an edge of another ridge using a rectangular copper layer, and further includes another input port.
And a fifth copper layer, as shown in fig. 7, is used for realizing shielding grounding of signals by laying the copper layer in a large area.
The first metalized holes are arranged in two rows according to a certain diameter and a certain distance as shown in fig. 8, and the first copper layer and the second copper layer are connected to form an end ridge, so that the forming of the wide-side direction ridge of the substrate integrated waveguide is realized.
The second metallized hole, as shown in fig. 9, connects the first copper layer and the third copper layer according to a certain diameter, so as to realize the vertical transition from the inside to the surface layer of the substrate integrated waveguide and the beam signal.
The third metalized holes are arranged in two rows according to a certain diameter and a certain distance as shown in fig. 10, and the fourth copper skin layer and the fifth copper skin layer are connected to form the ridge at the other end, so that the formation of the ridge at the other broadside direction of the substrate integrated waveguide is realized.
As shown in fig. 11, the fourth metalized holes are arranged in two rows according to a certain diameter and a certain distance to form the substrate integrated waveguide, and are arranged in a circle to realize vertical transition grounding with the beam, so as to realize the formation of the substrate integrated waveguide and the shielding of the beam signal.
The above-described embodiments are not intended to limit the present invention, and any modifications, equivalents, improvements, etc. made within the spirit and principle of the present invention are included in the scope of the present invention.

Claims (10)

1.一种双脊基片集成波导宽带魔T,其特征在于,包括:铜皮层、微波介质板、金属化孔,铜皮层为矩形,具有渐变线,铜皮层和微波介质板通过一体化设计制造而成,金属化孔按照一定直径,排列成一定间距和形状,金属化孔连接铜皮层。1. a double ridge substrate integrated waveguide broadband magic T, is characterized in that, comprises: copper skin layer, microwave dielectric plate, metallized hole, copper skin layer is rectangular, has gradient line, copper skin layer and microwave dielectric plate are designed by integrated The metallized holes are arranged in a certain distance and shape according to a certain diameter, and the metallized holes are connected to the copper skin layer. 2.根据权利要求1所述的双脊基片集成波导宽带魔T,其特征在于,所述铜皮层和微波介质板,包括:第一铜皮层、第二铜皮层、第三铜皮层、第四铜皮层、第五铜皮层和第一微波介质板、第二微波介质板、第三微波介质板、第四微波介质板,第一微波介质板在第一铜皮层和第二铜皮层之间,第二微波介质板在第二铜皮层和第三铜皮层之间,第三微波介质板在第三铜皮层和第四铜皮层之间,第四微波介质板在第四铜皮层和第五铜皮层之间。2. The dual-ridge substrate integrated waveguide broadband magic T according to claim 1, wherein the copper skin layer and the microwave dielectric plate comprise: a first copper skin layer, a second copper skin layer, a third copper skin layer, a Four copper skin layers, fifth copper skin layer and first microwave dielectric board, second microwave dielectric board, third microwave dielectric board, fourth microwave dielectric board, the first microwave dielectric board is between the first copper skin layer and the second copper skin layer , the second microwave dielectric plate is between the second copper skin layer and the third copper skin layer, the third microwave dielectric plate is between the third copper skin layer and the fourth copper skin layer, and the fourth microwave dielectric plate is between the fourth copper skin layer and the fifth copper skin layer. between the copper layers. 3.根据权利要求2所述的双脊基片集成波导宽带魔T,其特征在于,所述金属化孔,包括:3. The dual-ridge substrate integrated waveguide broadband magic T according to claim 2, wherein the metallized hole comprises: 第一金属化孔、第二金属化孔、第三金属化孔、第四金属化孔,第一金属化孔连接第一铜皮层和第二铜皮层,第二金属化孔连接第一铜皮层和第三铜皮层,第三金属化孔连接The first metallization hole, the second metallization hole, the third metallization hole, and the fourth metallization hole, the first metallization hole connects the first copper skin layer and the second copper skin layer, and the second metallization hole connects the first copper skin layer Connect with the third copper skin layer and the third metallized hole 第四铜皮层和第五铜皮层,第四金属化孔连接第一铜皮层、第二铜皮层、第四铜皮层、The fourth copper skin layer and the fifth copper skin layer, the fourth metallization hole connects the first copper skin layer, the second copper skin layer, the fourth copper skin layer, 第五铜皮层。The fifth copper skin layer. 4.根据权利要求2所述的双脊基片集成波导宽带魔T,其特征在于,所述第一铜皮层,大面积铺铜,采用同轴互连作为对外接口。4 . The dual-ridge substrate integrated waveguide broadband magic T according to claim 2 , wherein the first copper skin layer is copper-coated in a large area, and uses coaxial interconnection as an external interface. 5 . 5.根据权利要求2所述的双脊基片集成波导宽带魔T,其特征在于,所述第二铜皮层,采用渐变线作为输入输出的阻抗匹配,采用矩形的边作为脊的边。5 . The dual-ridged substrate integrated waveguide broadband magic T according to claim 2 , wherein the second copper skin layer adopts a gradient line as the impedance matching of input and output, and adopts a rectangular edge as the edge of the ridge. 6 . 6.根据权利要求2所述的双脊基片集成波导宽带魔T,其特征在于,所述第三铜皮层,采用渐变线或多级阶梯变换作为波束传输的阻抗匹配。6 . The dual-ridged substrate integrated waveguide broadband magic T according to claim 2 , wherein the third copper skin layer adopts gradient line or multi-stage step transformation as the impedance matching of beam transmission. 7 . 7.根据权利要求2所述的双脊基片集成波导宽带魔T,其特征在于,所述第四铜皮层,采用渐变线作为输入的阻抗匹配,采用矩形的边作为脊的边。7 . The dual-ridged substrate integrated waveguide broadband magic T according to claim 2 , wherein the fourth copper skin layer adopts a gradient line as the input impedance matching, and adopts a rectangular edge as the edge of the ridge. 8 . 8.根据权利要求2所述的双脊基片集成波导宽带魔T,其特征在于,所述第五铜皮层,采用大面积铺铜作为屏蔽接地。8 . The dual-ridged substrate integrated waveguide broadband magic T according to claim 2 , wherein the fifth copper skin layer adopts a large-area copper layer as shielding grounding. 9 . 9.根据权利要求3所述的双脊基片集成波导宽带魔T,其特征在于,所述第一金属化孔和第三金属化孔,排列成两行,作为脊的边。9 . The dual-ridged substrate integrated waveguide broadband magic T according to claim 3 , wherein the first metallized hole and the third metallized hole are arranged in two rows as the edges of the ridge. 10 . 10.根据权利要求3所述的双脊基片集成波导宽带魔T,其特征在于,所述第四金属化孔,排列成两行和圆形。10 . The dual-ridge substrate integrated waveguide broadband magic T according to claim 3 , wherein the fourth metallized holes are arranged in two rows and a circle. 11 .
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CN105024129A (en) * 2015-07-21 2015-11-04 南京邮电大学 Novel planar Magic-T based on folded substrate integrated waveguide
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