CN110829803B - Power supply detection and control circuit of miniaturized radio frequency transceiver module power amplifier - Google Patents
Power supply detection and control circuit of miniaturized radio frequency transceiver module power amplifier Download PDFInfo
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
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- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/10—Arrangements incorporating converting means for enabling loads to be operated at will from different kinds of power supplies, e.g. from AC or DC
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Abstract
The invention discloses a power supply detection and control circuit of a miniaturized radio frequency transceiver module power amplifier, which is characterized by comprising the following components: the negative pressure detection and modulation circuit 1 is respectively connected with the drive stage power amplifier drain electrode power supply circuit 2 and the final stage power amplifier drain electrode power supply circuit 3, so that the negative pressure power supply input by the negative pressure detection and modulation circuit 1 is detected, a modulation signal is output according to a detection result and a TTL control signal, the modulation signal is respectively and simultaneously output to the drive stage power amplifier drain electrode power supply circuit 2 and the final stage power amplifier drain electrode power supply circuit 3 to modulate an output power supply, and the modulation signal is respectively output to a power tube through output ends OUT2 and OUT 3. The whole transmitting circuit is ensured to work normally, stably and efficiently from the source.
Description
Technical Field
The invention relates to the field of power supply detection and control of a radio frequency circuit, in particular to design and implementation of a power supply detection and control circuit of a miniaturized radio frequency transceiver module power amplifier.
Background
Radio frequency is a high frequency electromagnetic wave with long distance transmission capability. The radio frequency transceiving technology is widely applied to the fields of wireless communication, radar and the like, is an important part for realizing wireless transmission, and has the function of modulating high-frequency current by using an electric information source to form a radio frequency signal which is transmitted to the air through an antenna; meanwhile, the radio frequency signal can be remotely received and then is subjected to inverse modulation, and the radio frequency signal is restored into an electric information source.
The miniaturized radio frequency transceiver module is generally used as a radio frequency front end of wireless communication or radar equipment to finish the transmission and the reception of radio frequency signals.
The overall progress of communication and radar technologies puts higher demands on electrical performance indexes, reliability, miniaturization and the like of the radio frequency transceiver module, and the specific problems of good power consumption, efficiency, distortion, thermal design, derating design and the like need to be solved in the design.
The radio frequency transceiver module comprises a transmitting part and a receiving part, the prime power of the work is a power circuit, and the performance of the power circuit determines the performance of the whole equipment to a certain extent. For the radio frequency module, the design of the power supply and the requirements of the performance index of the power supply are strict. Improper design of the power supply may affect the normal operation of the rf device. The power supply design also comprises a digital power supply, an analog power supply, power supply filtering, a power supply scheme, device type selection, power-on sequence, power supply detection and control and the like, and all links need to be considered thoroughly, so that the failure of each link is avoided. For a miniaturized radio frequency transceiver module, a radio frequency power amplifier and an auxiliary circuit thereof are electronic circuits designed by comprehensively considering the problems of output power, excitation level, power consumption, distortion, efficiency, size, weight and the like, the main technical indexes of the electronic circuits are the output power and the efficiency, and the power supply design is particularly important for meeting the indexes and performance requirements during working, especially for the power supply and power supply control problems of a power amplifier circuit driving stage power amplifier drain electrode and a final stage power amplifier drain electrode.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, provides a power supply detection and control circuit of a miniaturized radio frequency transceiver module power amplifier, realizes pulse modulation on power supply of a power tube drain electrode in a power amplifier circuit, detects negative voltage power supply of a negative voltage level introduced from a power tube grid electrode in the power amplifier circuit, controls power supply of a driver-stage power amplifier drain electrode and a final-stage power amplifier drain electrode respectively after normal detection, accurately controls the power tube to be at the first stage, and finishes ensuring normal, stable and efficient work of the whole transmitting circuit from the source.
The purpose of the invention is realized by the following technical scheme:
a power detection and control circuit of a miniaturized radio frequency transceiver module power amplifier comprises: the negative pressure detection and modulation circuit 1 is respectively connected with the drive stage power amplifier drain power supply circuit 2 and the final stage power amplifier drain power supply circuit 3, so that the negative pressure power input by the negative pressure detection and modulation circuit 1 is detected, a modulation signal is output according to a detection result and a TTL control signal, the modulation signal is respectively and simultaneously output to the drive stage power amplifier drain power supply circuit 2 and the final stage power amplifier drain power supply circuit 3 to modulate an output power, and the modulation signal is respectively output to a power tube through an output end OUT2 and an output end OUT 3; the negative voltage detecting and modulating circuit 1 comprises a negative voltage detecting chip U1, a resistor R1, a resistor R5, a resistor R7, a resistor R8, a resistor R9, a resistor R10, a capacitor C1, a capacitor C2, a signal input end IN, a positive voltage power input end and a negative voltage power input end, wherein the negative voltage power input end is coupled with a first pin of the negative voltage detecting chip U1 through a resistor R1, one end of the capacitor C1 is grounded, the other end of the capacitor C1 is connected with the first pin of the negative voltage detecting chip U1, the signal input end IN is coupled with a second pin of the negative voltage detecting chip U1 through a resistor R7, one end of the resistor R8 is grounded, the other end of the resistor R8 is connected between the signal input end IN and the resistor R7, the positive voltage power input end is coupled with an eighth pin of the negative voltage detecting chip U1 through a resistor R5, one end of the capacitor C2 is grounded, the other end of the capacitor C2 is connected with an eighth pin of the negative voltage detecting chip U1, and a sixth pin of the negative voltage detection chip U1 is respectively connected with the driving stage power amplifier drain power supply circuit 2 and the final stage power amplifier drain power supply circuit 3 through a resistor R9.
Through the circuit design of the negative pressure detection and modulation circuit 1, the input of TTL control signals is realized, the negative pressure power supply voltage of the grid electrode of the power tube in the power amplifier circuit is detected, and after a detection result is normal, modulation signals are generated and are respectively and simultaneously transmitted to the circuit 2 and the circuit 3, so that the normal, stable and efficient work of the whole transmitting circuit is ensured from the source.
According to a preferred embodiment, one end of the resistor R10 is grounded, and the other end is connected with the sixth pin of the negative voltage detection chip U1.
According to a preferred embodiment, the third pin of the voltage detection chip U1 is grounded.
According to a preferred embodiment, the positive voltage power input end and the negative voltage power input end are respectively connected with a positive voltage direct current power supply and a negative voltage direct current power supply.
According to a preferred embodiment, the positive voltage power supply input end is connected with a +5V positive voltage direct current power supply, and the negative voltage power supply input end is connected with a-5V negative voltage direct current power supply.
According to a preferred embodiment, the driver stage power amplifier drain power supply circuit 2 comprises an NPN type transistor Q1, an NPN type transistor Q2, a PNP type transistor Q3, a P-channel field effect transistor Q4, a resistor R2, a resistor R3, a resistor R4, a resistor R6, an operating power supply terminal VDD, and an output terminal OUT 2; the negative voltage detection and modulation circuit 1 is connected with the base of the NPN type triode Q1, the emitter of the NPN type triode Q1 is grounded, and the collector of the NPN type triode Q1 is respectively coupled with the base of the NPN type triode Q2 and the base of the PNP type triode Q3 through a resistor R6; the working power supply end VDD is respectively connected with the base electrode of the NPN type triode Q2 and the base electrode of the PNP type triode Q3 through a resistor R2, and is also connected with the collector electrode of the NPN type triode Q2, one end of a resistor R3 and the source electrode of a P-channel field effect transistor Q4; an emitter of the NPN type triode Q2 and an emitter of the PNP type triode Q3 are respectively coupled with a grid electrode of a P-channel field effect transistor Q4 through a resistor R4, the other end of the resistor R3 is connected with a grid electrode of a P-channel field effect transistor Q4, and a collector electrode of the PNP type triode Q3 is grounded; the drain electrode of the P-channel field effect transistor Q4 is connected with the output end OUT 2.
According to a preferred embodiment, the final stage power amplifier drain power supply circuit 3 comprises an NPN type transistor Q5, an NPN type transistor Q6, a PNP type transistor Q7, a P-channel field effect transistor Q8, a resistor R11, a resistor R12, a resistor R13, a resistor R14, an operating power supply terminal VDD, and an output terminal OUT 3; the negative voltage detection and modulation circuit 1 is connected with the base of the NPN type triode Q5, the emitter of the NPN type triode Q5 is grounded, and the collector of the NPN type triode Q5 is respectively coupled with the base of the NPN type triode Q6 and the base of the PNP type triode Q7 through a resistor R14; the working power supply end VDD is respectively connected with the base electrode of the NPN type triode Q6 and the base electrode of the PNP type triode Q7 through a resistor R11, and is also connected with the collector electrode of the NPN type triode Q6, one end of a resistor R12 and the source electrode of a P-channel field effect transistor Q8; an emitter of the NPN type triode Q6 and an emitter of the PNP type triode Q7 are respectively coupled with a grid electrode of a P-channel field effect transistor Q8 through a resistor R13, the other end of the resistor R12 is connected with a grid electrode of a P-channel field effect transistor Q8, and a collector electrode of the PNP type triode Q7 is grounded; the drain electrode of the P-channel field effect transistor Q8 is connected with the output end OUT 3.
The main scheme and the further selection schemes can be freely combined to form a plurality of schemes which are all adopted and claimed by the invention; in the invention, the selection (each non-conflict selection) and other selections can be freely combined. The skilled person in the art can understand that there are many combinations, which are all the technical solutions to be protected by the present invention, according to the prior art and the common general knowledge after understanding the scheme of the present invention, and the technical solutions are not exhaustive herein.
The invention has the beneficial effects that: the power supply detection and control circuit provided by the invention realizes pulse modulation aiming at power supply of the drain electrode of the power tube in the power amplification circuit, detects negative voltage power supply introduced from the grid electrode of the power tube in the power amplification circuit, and respectively controls power supply of the drain electrode of the drive-stage power amplifier and the drain electrode of the final-stage power amplifier after normal detection, so that the power supply detection and control circuit is accurately controlled to the first stage of the power tube, and the whole transmitting circuit is ensured to normally, stably and efficiently work from the source.
Drawings
FIG. 1 is a schematic diagram of the power supply detection and control circuit of the present invention;
the system comprises a 1-negative pressure detection and modulation circuit, a 2-drive stage power amplifier drain electrode power supply circuit and a 3-final stage power amplifier drain electrode power supply circuit.
Detailed Description
The following non-limiting examples serve to illustrate the invention.
Example 1:
referring to fig. 1, a power detection and control circuit for a miniaturized rf transceiver module power amplifier includes: a negative pressure detection and modulation circuit 1, a drive stage power amplifier drain electrode power supply circuit 2 and a final stage power amplifier drain electrode power supply circuit 3.
Preferably, the negative voltage detection and modulation circuit 1 is respectively connected with the driving stage power amplifier drain power supply circuit 2 and the final stage power amplifier drain power supply circuit 3, so as to realize detection of the negative voltage power input by the negative voltage detection and modulation circuit 1, and output a modulation signal according to a detection result and a TTL control signal, wherein the modulation signal is respectively and simultaneously output to the driving stage power amplifier drain power supply circuit 2 and the final stage power amplifier drain power supply circuit 3 to modulate the output power, and is respectively output to the power tube through an output end OUT2 and an output end OUT 3. Further, the power transistor may be a GaN power transistor.
Preferably, the negative voltage detecting and modulating circuit 1 includes a negative voltage detecting chip or negative control positive chip U1, a resistor R1, a resistor R5, a resistor R7, a resistor R8, a resistor R9, a resistor R10, a capacitor C1, a capacitor C2, a signal input terminal IN, a positive voltage power input terminal and a negative voltage power input terminal.
Further, the negative pressure detecting chip U1 may be NCD 43M. The positive voltage power supply input end and the negative voltage power supply input end are respectively connected with a positive voltage direct current power supply and a negative voltage direct current power supply. Furthermore, the input end of the positive voltage power supply is connected with a +5V positive voltage direct current power supply, and the input end of the negative voltage power supply is connected with a-5V negative voltage direct current power supply.
The negative power input terminal is coupled to the first pin of the negative voltage detecting chip U1 through a resistor R1, and one end of the capacitor C1 is grounded and the other end is connected to the first pin of the negative voltage detecting chip U1. After the direct current-5V power supply to be detected is isolated and limited by R1, the direct current-5V power supply is filtered by a bypass capacitor C1 and enters a pin 1 of a U1 of a negative voltage detection chip.
The signal input terminal IN is coupled to the second pin of the negative voltage detecting chip U1 through a resistor R7. And the TTL input signal 1N enters a pin 2 of a U1 negative voltage detection chip after being subjected to current limiting through R7. The third pin of the negative voltage detection chip U1 is grounded.
The resistor R8 has one end grounded and the other end connected between the signal input terminal IN and the resistor R7. The TTL control signal realizes a pull-down function through the resistor R8, and ensures that a signal entering the pin 2 of the negative control positive chip U1 is at a low level when the IN input end is suspended.
The positive voltage power input end is coupled with the eighth pin of the negative voltage detection chip U1 through a resistor R5, and one end of the capacitor C2 is grounded while the other end is connected with the eighth pin of the negative voltage detection chip U1. After current limiting protection is carried out on a direct current +5V power supply through a resistor R5, the direct current +5V power supply enters a pin 8 of a U1 of a negative voltage detection chip, and power supply to U1 is completed.
And a sixth pin of the negative voltage detection chip U1 is respectively connected with the driving stage power amplifier drain power supply circuit 2 and the final stage power amplifier drain power supply circuit 3 through R9. One end of the resistor R10 is grounded, and the other end of the resistor R10 is connected with the sixth pin of the negative voltage detection chip U1. After the negative pressure detection chip U1 finishes the negative pressure detection function, a control signal which is IN phase with the TTL signal input by the IN end is output by the pin 6, pulled down is finished by the R10, and after current limiting is carried out by the resistor R9, the control signal is output to the driving stage power amplifier drain power supply circuit 2 and the final stage power amplifier drain power supply circuit 3.
The negative voltage detection and modulation circuit 1 is-5V, which is led from the grid electrode of the GaN power tube in the power amplification circuit, is isolated and limited by a resistor R1, is filtered by a bypass capacitor C1, and finally enters a pin 1 of a negative control positive chip U1. The negative voltage power supply detection is carried OUT, only when the negative voltage power supply of the grid electrode of the GaN power tube is normal, a modulation signal is output through an output end OUT2 and an output end OUT3, the power supply of the drain electrode of the GaN power tube IN the power amplifier circuit is started, otherwise, the power supply of the drain electrode of the GaN power tube is always cut off, so that the negative voltage detection of direct current-5V must be carried OUT by a U1 chip, and after the detection is finished, if the index requirement is met, a control signal which is IN phase with a TTL signal input by an IN end is output by a pin 6 and serves as a control signal for the power supply of the drain electrode of the power amplifier and is respectively provided for a power supply circuit of the drain electrode of the drive-stage power amplifier and a power supply circuit of the drain electrode of the final-stage power amplifier for further processing. That is, the circuit performs pulse modulation for the power supply of the GaN power tube drain, and the modulation circuit is added with a power-on sequence control function, that is, firstly, the dc-5V detection is performed, and then whether the power supply is permitted is determined, rather than the direct power supply without detection which is usually adopted before. And power is supplied after detection, so that the power on of the grid electrode and the drain electrode of the power amplifier tube is controlled in time sequence while the power on pulse modulation of the power amplifier is completed, and the damage of the GaN power tube caused by accidental power on is prevented.
Through the circuit design of the negative pressure detection and modulation circuit 1, the input of TTL control signals is realized, the negative pressure power supply voltage of the grid electrode of the power tube in the power amplifier circuit is detected, after the detection result is normal, the control signals for generating power amplifier drain electrode power supply are respectively and simultaneously transmitted to the circuit 2 and the circuit 3, and the normal, stable and efficient work of the whole transmitting circuit is ensured from the source.
Preferably, the driver stage power amplifier drain power supply circuit 2 includes an NPN transistor Q1, an NPN transistor Q2, a PNP transistor Q3, a P-channel fet Q4, a resistor R2, a resistor R3, a resistor R4, a resistor R6, a working power supply terminal VDD, and an output terminal OUT 2.
The negative voltage detecting and modulating circuit 1 is connected to the base of the NPN transistor Q1, the emitter of the NPN transistor Q1 is grounded, and the collector of the NPN transistor Q1 is coupled to the base of the NPN transistor Q2 and the base of the PNP transistor Q3 through a resistor R6. The modulation signal output from the negative voltage detection and modulation circuit 1 is connected with the base of the triode Q1, and after the triode Q1 is connected with the transistors Q2 and Q3, the inversion processing of the modulation signal is completed, and the driving voltage entering the triodes Q2 and Q3 is controlled.
The working power supply end VDD is respectively connected with the base electrode of the NPN type triode Q2 and the base electrode of the PNP type triode Q3 through a resistor R2, and is also connected with the collector electrode of the NPN type triode Q2, one end of a resistor R3 and the drain electrode of a P-channel field effect transistor Q4. After voltage division of the direct-current working voltage VDD is achieved through the resistors R2 and R6, the direct-current working voltage VDD respectively enters the base electrodes of the triode Q2 and the triode Q3 to drive the triode Q2 and the triode Q3 to work.
The emitting electrodes of the NPN type triode Q2 and the PNP type triode Q3 are respectively coupled with the grid electrode of the P-channel field effect transistor Q4 through a resistor R4, the other end of the resistor R3 is connected with the grid electrode of the P-channel field effect transistor Q4, and the collecting electrode of the PNP type triode Q3 is grounded. The drain electrode of the P-channel field effect transistor Q4 is connected with the output end OUT 2. The composite tube composed of the triode Q2 and the triode Q3 amplifies current and provides control signal output with enough driving capability so as to control the field effect transistor Q4 to realize output voltage at the output end of OUT2 and complete power supply to the drain electrode of the driving-level GaN power tube. And the direct current working voltage VDD is used for realizing the pull-up of the grid electrode of the effect tube Q4 through the resistor R3, and the voltage of the output end of OUT2 is 0 volt when no control signal is input to the grid electrode.
Preferably, the driving stage power amplifier drain power supply circuit 3 includes an NPN type transistor Q5, an NPN type transistor Q6, a PNP type transistor Q7, a P-channel field effect transistor Q8, a resistor R11, a resistor R12, a resistor R13, a resistor R14, a working power supply terminal VDD, and an output terminal OUT 3.
The negative voltage detecting and modulating circuit 1 is connected to the base of the NPN transistor Q5, the emitter of the NPN transistor Q5 is grounded, and the collector of the NPN transistor Q5 is coupled to the base of the NPN transistor Q6 and the base of the PNP transistor Q7 through a resistor R14. The modulation signal output from the negative voltage detection and modulation circuit 1 is connected with the base of the triode Q5, and after the triode Q5 is connected with the transistors Q6 and Q7, the inversion processing of the modulation signal is completed, and the driving voltage entering the triodes Q6 and Q7 is controlled.
The working power supply end VDD is respectively connected with the base electrode of the NPN type triode Q6 and the base electrode of the PNP type triode Q7 through a resistor R11, and is also connected with the collector electrode of the NPN type triode Q6, a resistor R12 and the drain electrode of a P-channel field effect transistor Q8. After voltage division of the direct-current working voltage VDD is achieved through the resistors R11 and R14, the direct-current working voltage VDD respectively enters the base electrodes of the triode Q6 and the triode Q7 to drive the triode Q6 and the triode Q7 to work.
An emitting electrode of the NPN type triode Q6 and an emitting electrode of the PNP type triode Q7 are respectively coupled with a grid electrode of a P-channel field effect transistor Q8 through a resistor R13, the other end of the resistor R12 is connected with a grid electrode of a P-channel field effect transistor Q8, and a collector electrode of the PNP type triode Q7 is grounded; the drain electrode of the P-channel field effect transistor Q8 is connected with the output end OUT 3. A composite tube composed of a triode Q6 and a triode Q7 is used for current amplification, and provides control signal output with enough driving capability so as to control a field effect tube Q8 to realize output voltage of an output end of OUT3 and complete power supply to a drain electrode of a final-stage GaN power tube; the direct-current working voltage VDD is used for pulling up the grid of a field effect transistor Q8 through a resistor R12, and the voltage of the output end of OUT3 is 0 volt when no control signal is input to the grid.
The circuit comprises a signal input end IN and two output ends which are respectively an output end OUT2 and an output end OUT 3. The TTL control level completes inputting the TTL control signal through the signal input end IN. And an output terminal OUT2 for outputting the supply of the driver stage. And a signal output terminal OUT3 for outputting a power supply of the final stage. After the TTL control level is input from the signal input terminal IN, the modulated signal is output after the power-on timing sequence is controlled by the negative voltage detection and modulation circuit 1.
The power supply detection and control circuit provided by the invention realizes pulse modulation aiming at power supply of the drain electrode of the power tube in the power amplification circuit, detects negative voltage power supply introduced from the grid electrode of the power tube in the power amplification circuit, controls power supply of the drain electrode of the drive-stage power amplifier and the drain electrode of the final-stage power amplifier respectively after normal detection, accurately controls the power tube to be in the first stage, and ensures that the whole transmitting circuit works normally, stably and efficiently from the source.
The foregoing basic embodiments of the invention and their various further alternatives can be freely combined to form multiple embodiments, all of which are contemplated and claimed herein. In the scheme of the invention, each selection example can be combined with any other basic example and selection example at will. Numerous combinations will be known to those skilled in the art.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (4)
1. The utility model provides a power detection and control circuit of miniaturized radio frequency transceiver module power amplifier which characterized in that, power detection and control circuit includes: the negative pressure detection and modulation circuit (1), the drive stage power amplifier drain power supply circuit (2) and the final stage power amplifier drain power supply circuit (3), wherein the negative pressure detection and modulation circuit (1) is respectively connected with the drive stage power amplifier drain power supply circuit (2) and the final stage power amplifier drain power supply circuit (3), so that a negative pressure power supply input by the negative pressure detection and modulation circuit (1) is detected, a modulation signal is output according to a detection result and a TTL control signal, the modulation signal is respectively and simultaneously output to the drive stage power amplifier drain power supply circuit (2) and the final stage power amplifier drain power supply circuit (3) to modulate an output power supply, and the modulation signal is respectively output to a power tube through an output end OUT2 and an output end OUT 3;
the negative pressure detection and modulation circuit (1) comprises a negative pressure detection chip U1, a resistor R1, a resistor R5, a resistor R7, a resistor R8, a resistor R9, a resistor R10, a capacitor C1, a capacitor C2, a signal input end IN, a positive pressure power supply input end and a negative pressure power supply input end, wherein the negative pressure detection chip U1 is NCD 43M;
wherein the negative power input terminal is coupled to the first pin of the negative voltage detecting chip U1 through a resistor R1, and one end of the capacitor C1 is grounded and the other end is connected to the first pin of the negative voltage detecting chip U1,
the signal input terminal IN is coupled with the second pin of the negative voltage detection chip U1 through a resistor R7, one end of the resistor R8 is grounded, the other end is connected between the signal input terminal IN and the resistor R7,
the positive voltage power input terminal is coupled to the eighth pin of the negative voltage detecting chip U1 through a resistor R5, and one end of the capacitor C2 is grounded while the other end is connected to the eighth pin of the negative voltage detecting chip U1,
a sixth pin of the negative pressure detection chip U1 is respectively connected with the driving stage power amplifier drain power supply circuit (2) and the final stage power amplifier drain power supply circuit (3) through a resistor R9;
one end of the resistor R10 is grounded, and the other end of the resistor R10 is connected with a sixth pin of the negative voltage detection chip U1;
the driving stage power amplifier drain power supply circuit (2) comprises an NPN type triode Q1, an NPN type triode Q2, a PNP type triode Q3, a P channel field effect transistor Q4, a resistor R2, a resistor R3, a resistor R4, a resistor R6, a working power supply end VDD and an output end OUT 2;
the negative voltage detection and modulation circuit (1) is connected with the base electrode of the NPN type triode Q1, the emitting electrode of the NPN type triode Q1 is grounded, and the collecting electrode of the NPN type triode Q1 is respectively coupled with the base electrode of the NPN type triode Q2 and the base electrode of the PNP type triode Q3 through a resistor R6;
the working power supply end VDD is respectively connected with the base electrode of the NPN type triode Q2 and the base electrode of the PNP type triode Q3 through a resistor R2, and is also connected with the collector electrode of the NPN type triode Q2, one end of a resistor R3 and the source electrode of a P-channel field effect transistor Q4;
an emitter of the NPN type triode Q2 and an emitter of the PNP type triode Q3 are respectively coupled with a grid electrode of a P-channel field effect transistor Q4 through a resistor R4, the other end of the resistor R3 is connected with a grid electrode of a P-channel field effect transistor Q4, and a collector electrode of the PNP type triode Q3 is grounded;
the drain electrode of the P-channel field effect transistor Q4 is connected with the output end OUT 2;
the drain power supply circuit (3) of the final-stage power amplifier comprises an NPN type triode Q5, an NPN type triode Q6, a PNP type triode Q7, a P-channel field effect transistor Q8, a resistor R11, a resistor R12, a resistor R13, a resistor R14, a working power supply end VDD and an output end OUT 3;
the negative voltage detection and modulation circuit (1) is connected with the base electrode of the NPN type triode Q5, the emitting electrode of the NPN type triode Q5 is grounded, and the collecting electrode of the NPN type triode Q5 is respectively coupled with the base electrode of the NPN type triode Q6 and the base electrode of the PNP type triode Q7 through a resistor R14;
the working power supply end VDD is respectively connected with the base electrode of the NPN type triode Q6 and the base electrode of the PNP type triode Q7 through a resistor R11, and is also connected with the collector electrode of the NPN type triode Q6, one end of a resistor R12 and the source electrode of a P-channel field effect transistor Q8;
an emitter of the NPN type triode Q6 and an emitter of the PNP type triode Q7 are respectively coupled with a grid electrode of a P-channel field effect transistor Q8 through a resistor R13, the other end of the resistor R12 is connected with a grid electrode of a P-channel field effect transistor Q8, and a collector electrode of the PNP type triode Q7 is grounded;
the drain electrode of the P-channel field effect transistor Q8 is connected with the output end OUT 3.
2. The power detection and control circuit of a miniaturized rf transceiver module power amplifier of claim 1, wherein the third pin of the negative voltage detection chip U1 is grounded.
3. The power detection and control circuit of a miniaturized rf transceiver module power amplifier of claim 2, wherein the positive voltage power input terminal and the negative voltage power input terminal are respectively connected to a positive voltage dc power supply and a negative voltage dc power supply.
4. The power detection and control circuit of a miniaturized rf transceiver module power amplifier of claim 3, wherein the positive voltage power input terminal is connected to +5V positive voltage dc power, and the negative voltage power input terminal is connected to-5V negative voltage dc power.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911033973.4A CN110829803B (en) | 2019-10-29 | 2019-10-29 | Power supply detection and control circuit of miniaturized radio frequency transceiver module power amplifier |
Applications Claiming Priority (1)
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| CN201911033973.4A CN110829803B (en) | 2019-10-29 | 2019-10-29 | Power supply detection and control circuit of miniaturized radio frequency transceiver module power amplifier |
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| CN110829803A CN110829803A (en) | 2020-02-21 |
| CN110829803B true CN110829803B (en) | 2021-10-12 |
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Citations (5)
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|---|---|---|---|---|
| US6259618B1 (en) * | 2000-05-03 | 2001-07-10 | Analog And Power Electronics Corp. | Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startup |
| JP2012191408A (en) * | 2011-03-10 | 2012-10-04 | Toshiba Corp | Gate driving circuit and power semiconductor module |
| CN103731018A (en) * | 2014-01-20 | 2014-04-16 | 常州机电职业技术学院 | Inversion module active driving protection device |
| CN104901633A (en) * | 2015-06-26 | 2015-09-09 | 中国船舶重工集团公司第七二四研究所 | Power sequence controlling and modulating circuit for GaN power amplifier |
| CN108964425A (en) * | 2018-07-04 | 2018-12-07 | 京信通信系统（中国）有限公司 | Gan chip negative pressure control circuit and equipment |
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2019
- 2019-10-29 CN CN201911033973.4A patent/CN110829803B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6259618B1 (en) * | 2000-05-03 | 2001-07-10 | Analog And Power Electronics Corp. | Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startup |
| JP2012191408A (en) * | 2011-03-10 | 2012-10-04 | Toshiba Corp | Gate driving circuit and power semiconductor module |
| CN103731018A (en) * | 2014-01-20 | 2014-04-16 | 常州机电职业技术学院 | Inversion module active driving protection device |
| CN104901633A (en) * | 2015-06-26 | 2015-09-09 | 中国船舶重工集团公司第七二四研究所 | Power sequence controlling and modulating circuit for GaN power amplifier |
| CN108964425A (en) * | 2018-07-04 | 2018-12-07 | 京信通信系统（中国）有限公司 | Gan chip negative pressure control circuit and equipment |
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| CN110829803A (en) | 2020-02-21 |
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