CN110581336A - An Improved Branch Line Coupler Based on Coaxial TSV - Google Patents
An Improved Branch Line Coupler Based on Coaxial TSV Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
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Abstract
本发明涉及一种基于同轴硅通孔的改进型分支线耦合器，包括从上到下依次相连的顶层模块、硅衬底层模块和底层模块，顶层模块包括顶层第一介质层、顶层接地屏蔽环、顶层第一信号互连柱、顶层接地柱、顶层接地层、顶层介质环、顶层第二信号互连柱、顶层第二介质层、顶层第三信号互连柱、顶层端口信号线、顶层信号线；硅衬底层模块包括硅衬底、第一介质环、接地屏蔽环、第二介质环、后信号互连柱、前信号互连柱；底层模块包括底层第一介质层、底层接地屏蔽环、底层第一信号互连柱、底层接地柱、底层接地层、底层介质环、底层第二信号互连柱、底层第二介质层、底层第三信号互连柱、底层端口信号线、底层信号线。
The invention relates to an improved branch line coupler based on coaxial through-silicon vias, which includes a top-layer module, a silicon substrate layer module and a bottom-layer module connected in sequence from top to bottom, and the top-layer module includes a first dielectric layer on the top layer and a grounding shield on the top layer Ring, top first signal interconnection post, top ground post, top ground layer, top dielectric ring, top second signal interconnection post, top second dielectric layer, top third signal interconnection post, top port signal line, top layer Signal line; the silicon substrate layer module includes a silicon substrate, a first dielectric ring, a ground shield ring, a second dielectric ring, a rear signal interconnection column, and a front signal interconnection column; the bottom layer module includes a bottom first dielectric layer, a bottom ground shield ring, bottom first signal interconnection post, bottom ground post, bottom ground layer, bottom dielectric ring, bottom second signal interconnect post, bottom second dielectric layer, bottom third signal interconnect post, bottom port signal line, bottom layer signal line.
Description
技术领域technical field
本发明属于三维集成电路领域，具体涉及一种基于同轴硅通孔的改进型分支线耦合器。The invention belongs to the field of three-dimensional integrated circuits, and in particular relates to an improved branch line coupler based on a coaxial through-silicon hole.
背景技术Background technique
耦合器是微波集成电路系统的关键无源器件之一，主要完成各元件以及各模块之间信号的功率分配和相位分配。The coupler is one of the key passive components of the microwave integrated circuit system, which mainly completes the power distribution and phase distribution of signals between components and modules.
因为奇模、偶模相速不同，平行耦合线耦合器很难实现高定向性。由两对具有不同特性阻抗的1/4波长传输线段组成的分支线耦合器可以很好的解决这一难题。对于弱耦合分支线耦合器，并联臂的特性阻抗很高，受制造工艺最小线宽的限制，简单微带线难以实现。两端对角接地的1/4波长耦合传输线段具有高阻抗特性，是实现高定向性、弱耦合强度分支下耦合器的最佳选择。Because of the difference in phase velocity between odd-mode and even-mode, parallel coupled line couplers are difficult to achieve high directivity. A branch line coupler composed of two pairs of 1/4 wavelength transmission line segments with different characteristic impedances can solve this problem well. For the weakly coupled branch line coupler, the characteristic impedance of the parallel arm is very high, limited by the minimum line width of the manufacturing process, it is difficult to realize a simple microstrip line. The 1/4 wavelength coupled transmission line segment with both ends diagonally grounded has high impedance characteristics and is the best choice for high directivity, weak coupling strength branch down couplers.
微波三维集成电路(3-D IC)将多个有源和无源电路模块垂直堆叠，并采用硅通孔(TSV)互连通道实现上下层模块之间的高速、高密度通信。微波3-D IC的发展趋势和TSV的垂直互连优势迫使传统微波系统中的元件和模块逐步采用三维立体结构。同轴TSV周围存在接地屏蔽环，非常适合于将低损耗、高隔离度微波耦合器以及其它元件的部分结构内埋置硅衬底内部，以减小芯片面积。但是目前还没有基于同轴TSV的三维分支线微波耦合器。Microwave three-dimensional integrated circuits (3-D ICs) vertically stack multiple active and passive circuit modules, and use through-silicon via (TSV) interconnection channels to achieve high-speed, high-density communication between upper and lower modules. The development trend of microwave 3-D IC and the vertical interconnection advantage of TSV force the components and modules in the traditional microwave system to gradually adopt three-dimensional structure. There is a ground shield ring around the coaxial TSV, which is very suitable for embedding part of the structure of low-loss, high-isolation microwave couplers and other components inside the silicon substrate to reduce the chip area. But there is no three-dimensional branch line microwave coupler based on coaxial TSVs yet.
发明内容Contents of the invention
发明目的：本发明针对上述现有技术存在的问题做出改进，提出一种基于同轴硅通孔的改进型分支线耦合器。Purpose of the invention: The present invention makes improvements to the problems existing in the above-mentioned prior art, and proposes an improved branch line coupler based on coaxial silicon vias.
技术方案：一种基于同轴硅通孔的改进型分支线耦合器，包括顶层模块、硅衬底层模块和底层模块，所述顶层模块设置在所述硅衬底层模块的上表面，所述底层模块设置在所述硅衬底层模块的下表面；Technical solution: An improved branch line coupler based on coaxial through-silicon vias, including a top module, a silicon substrate module and a bottom module, the top module is arranged on the upper surface of the silicon substrate module, and the bottom module The module is arranged on the lower surface of the silicon substrate layer module;
所述顶层模块包括顶层第一介质层、顶层接地屏蔽环、顶层第一信号互连柱、顶层接地柱、顶层接地层、顶层介质环、顶层第二信号互连柱、顶层第二介质层、顶层第三信号互连柱、顶层端口信号线、顶层信号线；The top module includes a top first dielectric layer, a top ground shielding ring, a top first signal interconnection column, a top ground column, a top ground layer, a top dielectric ring, a top second signal interconnection column, a top second dielectric layer, The third signal interconnection column on the top layer, the port signal line on the top layer, and the signal line on the top layer;
所述硅衬底层模块包括硅衬底、第一介质环、接地屏蔽环、第二介质环、后信号互连柱、前信号互连柱；The silicon substrate layer module includes a silicon substrate, a first dielectric ring, a ground shield ring, a second dielectric ring, a rear signal interconnection column, and a front signal interconnection column;
所述底层模块包括底层第一介质层、底层接地屏蔽环、底层第一信号互连柱、底层接地柱、底层接地层、底层介质环、底层第二信号互连柱、底层第二介质层、底层第三信号互连柱、底层端口信号线、底层信号线；The bottom module includes a bottom first dielectric layer, a bottom ground shielding ring, a bottom first signal interconnection post, a bottom ground post, a bottom ground layer, a bottom dielectric ring, a bottom second signal interconnection post, a bottom second dielectric layer, The bottom third signal interconnection column, the bottom port signal line, the bottom signal line;
所述顶层信号线左侧和右侧设有两个沿所述耦合器中心线呈左右轴对称分布的顶层端口信号线，所述两个顶层端口信号线和顶层信号线依次相连，所述顶层信号线的长度为1/4波长；The left side and the right side of the top-level signal line are provided with two top-level port signal lines symmetrically distributed along the center line of the coupler, and the two top-level port signal lines are connected to the top-level signal line in sequence. The length of the signal line is 1/4 wavelength;
所述顶层第二介质层设有两个沿所述耦合器中心线呈左右轴对称分布的顶层第三信号互连柱；The second dielectric layer on the top layer is provided with two third signal interconnection columns on the top layer symmetrically distributed along the center line of the coupler;
所述顶层接地层设有两个沿所述耦合器中心线呈左右轴对称分布的顶层第二信号互连柱，在所述顶层接地层与所述顶层第二信号互连柱之间设有顶层介质环；The top-level ground layer is provided with two top-level second signal interconnection columns symmetrically distributed along the center line of the coupler, and a top-level second signal interconnection column is provided between the top-level ground layer and the top-level second signal interconnection column. top dielectric ring;
所述顶层接地层、顶层第二介质层、顶层端口信号线形成微带传输线结构，所述微带传输线结构的特性阻抗为50欧姆；The top ground layer, the top second dielectric layer, and the top port signal line form a microstrip transmission line structure, and the characteristic impedance of the microstrip transmission line structure is 50 ohms;
所述顶层第一介质层设有两个沿耦合器中心线呈左右轴对称分布的顶层接地屏蔽环，在每个顶层接地屏蔽环中心的后部设有顶层第一信号互连柱，在每个顶层接地屏蔽环中心的前部设有顶层接地柱，两个顶层第一信号互连柱和两个顶层接地柱关于耦合器中心对称；The first dielectric layer on the top layer is provided with two top ground shielding rings symmetrically distributed along the left and right axes along the center line of the coupler, and the first signal interconnection column on the top layer is arranged at the rear of the center of each top ground shield ring. The front part of the center of the first top layer grounding shielding ring is provided with a top layer grounding post, and the two top layer first signal interconnection posts and the two top layer grounding posts are symmetrical about the center of the coupler;
所述硅衬底设有两个沿耦合器中心线呈左右轴对称分布的接地屏蔽环，在所述接地屏蔽环外侧与所述硅衬底之间设有第一介质环；The silicon substrate is provided with two ground shielding rings symmetrically distributed along the left and right axes along the center line of the coupler, and a first dielectric ring is provided between the outside of the ground shielding ring and the silicon substrate;
每个接地屏蔽环中心后部设有后信号互连柱，所述每个接地屏蔽环中心前部设有前信号互连柱，两个后信号互连柱和两个前信号互连柱关于耦合器中心对称，在所述后信号互连柱、前信号互连柱与接地屏蔽环之间设有第二介质环；The rear part of the center of each ground shielding ring is provided with a rear signal interconnection column, and the front part of the center of each ground shielding ring is provided with a front signal interconnection column, and the two rear signal interconnection columns and the two front signal interconnection columns are about The coupler is center-symmetric, and a second dielectric ring is provided between the rear signal interconnection column, the front signal interconnection column and the ground shielding ring;
所述后信号互连柱、前信号互连柱、接地屏蔽环形成耦合传输线结构，长度为1/4波长；The rear signal interconnection column, the front signal interconnection column, and the ground shielding ring form a coupled transmission line structure with a length of 1/4 wavelength;
所述底层第一介质层设有两个沿耦合器中心线呈左右轴对称分布的底层接地屏蔽环，在所述每个底层接地屏蔽环中心的后部设有底层第一信号互连柱，在所述每个底层接地屏蔽环中心的前部设有底层接地柱，两个底层第一信号互连柱和两个底层接地柱关于耦合器中心对称；The bottom first dielectric layer is provided with two bottom ground shielding rings symmetrically distributed along the left and right axis of the coupler center line, and the bottom first signal interconnection column is arranged at the rear of the center of each bottom ground shield ring, Bottom grounding posts are provided at the front of the center of each bottom ground shielding ring, and the two bottom first signal interconnection posts and the two bottom ground posts are symmetrical about the center of the coupler;
所述底层接地层设有两个沿耦合器中心线呈左右轴对称分布的底层第二信号互连柱，在所述底层接地层与所述底层第二信号互连柱之间设有底层介质环；The bottom ground layer is provided with two bottom second signal interconnection columns symmetrically distributed along the center line of the coupler, and a bottom layer medium is provided between the bottom ground layer and the bottom second signal interconnection column. ring;
所述底层第二介质层设有两个沿耦合器中心线呈左右轴对称分布的底层第三信号互连柱；The bottom second dielectric layer is provided with two bottom third signal interconnection posts symmetrically distributed along the center line of the coupler;
所述底层信号线的左侧和右侧设有两个沿所述耦合器中心线呈左右轴对称分布的底层端口信号线，两个底层端口信号线和底层信号线依次相连，所述底层信号线的长度为1/4波长；The left side and the right side of the bottom signal line are provided with two bottom port signal lines distributed symmetrically along the center line of the coupler, and the two bottom port signal lines are connected to the bottom signal line in sequence. The length of the line is 1/4 wavelength;
所述底层接地层、底层第二介质层、底层端口信号线形成微带传输线结构，所述微带传输线结构的特性阻抗为50欧姆；The bottom ground layer, the bottom second dielectric layer, and the bottom port signal line form a microstrip transmission line structure, and the characteristic impedance of the microstrip transmission line structure is 50 ohms;
所述顶层信号线、顶层第三信号互连柱、顶层第二信号互连柱、顶层第一信号互连柱、后信号互连柱、底层接地柱、底层接地层自上而下依次相连；The top signal line, the third signal interconnection column on the top layer, the second signal interconnection column on the top layer, the first signal interconnection column on the top layer, the rear signal interconnection column, the grounding column at the bottom layer, and the grounding layer at the bottom layer are sequentially connected from top to bottom;
所述底层信号线、底层第三信号互连柱、底层第二信号互连柱、底层第一信号互连柱、前信号互连柱、顶层接地柱、顶层接地层自下而上依次相连；The bottom signal line, the bottom third signal interconnection column, the bottom second signal interconnection column, the bottom first signal interconnection column, the front signal interconnection column, the top ground column, and the top ground layer are sequentially connected from bottom to top;
所述顶层接地层、顶层接地屏蔽环、接地屏蔽环、底层接地屏蔽环、底层接地层自上而下依次相连；The top ground layer, the top ground shield ring, the ground shield ring, the bottom ground shield ring, and the bottom ground layer are sequentially connected from top to bottom;
所述顶层第二介质层、顶层介质环、顶层第一介质层、第二介质环、底层第一介质层、底层介质环、底层第二介质层自上而下依次相连；The second dielectric layer at the top layer, the dielectric ring at the top layer, the first dielectric layer at the top layer, the second dielectric ring, the first dielectric layer at the bottom layer, the dielectric ring at the bottom layer, and the second dielectric layer at the bottom layer are sequentially connected from top to bottom;
所述顶层第一介质层、第一介质环、底层第一介质层自上而下依次相连。The top first dielectric layer, the first dielectric ring, and the bottom first dielectric layer are sequentially connected from top to bottom.
进一步地，所述顶层接地屏蔽环、接地屏蔽环、底层接地屏蔽环的中心处于同一条直线上。Further, the centers of the top ground shielding ring, the ground shielding ring and the bottom ground shielding ring are on the same straight line.
进一步地，所述顶层第三信号互连柱、顶层第二信号互连柱、顶层介质环、顶层第一信号互连柱、后信号互连柱、底层接地柱的中心处于同一条直线上。Further, the centers of the third signal interconnection column at the top layer, the second signal interconnection column at the top layer, the dielectric ring at the top layer, the first signal interconnection column at the top layer, the rear signal interconnection column, and the grounding column at the bottom layer are on the same straight line.
进一步地，所述底层第三信号互连柱、底层第二信号互连柱、底层介质环、底层第一信号互连柱、前信号互连柱、顶层接地柱的中心处于同一条直线上。Further, the centers of the third signal interconnection column at the bottom layer, the second signal interconnection column at the bottom layer, the dielectric ring at the bottom layer, the first signal interconnection column at the bottom layer, the front signal interconnection column, and the grounding column at the top layer are on the same straight line.
进一步地，所述基于同轴硅通孔的改进型分支线耦合器左右轴对称。Further, the improved branch line coupler based on coaxial TSVs is symmetrical to the left and right axes.
作为本发明中一种基于同轴硅通孔的改进型分支线耦合器的一种优选方案：所述顶层端口信号线、顶层信号线、底层端口信号线、底层信号线为铜线或银线；所述顶层接地层、底层接地层为铜层或银层。As a preferred solution of an improved branch line coupler based on coaxial TSVs in the present invention: the top port signal line, the top layer signal line, the bottom port signal line, and the bottom signal line are copper wires or silver wires ; The top ground layer and the bottom ground layer are copper layer or silver layer.
作为本发明中一种基于同轴硅通孔的改进型分支线耦合器的一种优选方案：所述顶层第三信号互连柱、顶层第二信号互连柱、顶层第一信号互连柱、顶层接地柱、后信号互连柱、前信号互连柱、底层接地柱、底层第一信号互连柱、底层第二信号互连柱、底层第三信号互连柱为铜柱或银柱或钨柱或多晶硅柱。As a preferred solution of an improved branch line coupler based on coaxial silicon vias in the present invention: the third signal interconnection column on the top layer, the second signal interconnection column on the top layer, and the first signal interconnection column on the top layer , The top ground column, the rear signal interconnection column, the front signal interconnection column, the bottom ground column, the bottom first signal interconnection column, the bottom second signal interconnection column, and the bottom third signal interconnection column are copper or silver columns Or tungsten column or polysilicon column.
作为本发明中一种基于同轴硅通孔的改进型分支线耦合器的一种优选方案：所述顶层接地屏蔽环、接地屏蔽环、底层接地屏蔽环为铜环或银环或钨环或多晶硅环。As a preferred solution of an improved branch line coupler based on coaxial TSVs in the present invention: the top ground shielding ring, the ground shield ring, and the bottom ground shield ring are copper rings or silver rings or tungsten rings or Polysilicon ring.
作为本发明中一种基于同轴硅通孔的改进型分支线耦合器的一种优选方案：所述顶层第二介质层、顶层第一介质层、底层第一介质层、底层第二介质层为二氧化硅层、氮化硅层或苯并环丁烯层，所述顶层介质环、第一介质环、第二介质环、底层介质环为二氧化硅环、氮化硅环或苯并环丁烯环。As a preferred solution of an improved branch line coupler based on coaxial through-silicon vias in the present invention: the second dielectric layer on the top layer, the first dielectric layer on the top layer, the first dielectric layer on the bottom layer, and the second dielectric layer on the bottom layer It is a silicon dioxide layer, a silicon nitride layer or a benzocyclobutene layer, and the top dielectric ring, the first dielectric ring, the second dielectric ring, and the bottom dielectric ring are silicon dioxide rings, silicon nitride rings or benzocyclobutene cyclobutene ring.
有益效果：本发明公开的一种基于同轴硅通孔的改进型分支线耦合器，具有以下有益效果：Beneficial effects: An improved branch line coupler based on coaxial silicon vias disclosed in the present invention has the following beneficial effects:
1、本发明采用同轴硅通孔技术实现分支线耦合器的两个并联臂，形成三维立体结构，结构紧凑、占用面积小；1. The present invention adopts the coaxial through-silicon via technology to realize the two parallel arms of the branch line coupler, forming a three-dimensional structure with a compact structure and a small occupied area;
2、本发明输入端口和隔离端口在硅衬底的上表面，两个输出端口在硅衬底的下表面，反之亦然，所以易于与其它层或模块元件互连并实现微波系统的三维集成化；2. The input port and isolation port of the present invention are on the upper surface of the silicon substrate, and the two output ports are on the lower surface of the silicon substrate, and vice versa, so it is easy to interconnect with other layers or module components and realize the three-dimensional integration of the microwave system change;
3、本发明并联臂采用两对耦合TSV，可实现弱耦合分支线耦合器；3. The parallel arm of the present invention adopts two pairs of coupled TSVs, which can realize weakly coupled branch line couplers;
4、本发明将信号线和硅衬底采用接地层和接地屏蔽环隔离开，传输损耗小，各个分支之间的电磁隔离度好，同时电磁辐射小，与周围其它元件或模块之间的耦合噪声弱，简化了三维微波集成系统内部的电磁隔离设计。4. In the present invention, the signal line and the silicon substrate are isolated by the ground layer and the ground shielding ring, the transmission loss is small, the electromagnetic isolation between each branch is good, and the electromagnetic radiation is small at the same time, and the coupling with other surrounding components or modules The noise is weak, which simplifies the electromagnetic isolation design inside the three-dimensional microwave integrated system.
附图说明Description of drawings
图1为本发明公开的一种基于同轴硅通孔的改进型分支线耦合器的三维视图；FIG. 1 is a three-dimensional view of an improved branch line coupler based on coaxial silicon vias disclosed in the present invention;
图2为本发明公开的一种基于同轴硅通孔的改进型分支线耦合器的沿AA的剖面图；2 is a cross-sectional view along AA of an improved branch line coupler based on coaxial TSVs disclosed in the present invention;
其中：in:
101-顶层第一介质层 102-顶层接地屏蔽环101-The first dielectric layer of the top layer 102-The ground shielding ring of the top layer
103-顶层第一信号互连柱 104-顶层接地柱103-The first signal interconnection post on the top layer 104-The ground post on the top layer
105-顶层接地层 106-顶层介质环105-Top ground layer 106-Top dielectric ring
107-顶层第二信号互连柱 108-顶层第二介质层107-The second signal interconnection column on the top layer 108-The second dielectric layer on the top layer
109-顶层第三信号互连柱 110-顶层端口信号线109-The third signal interconnection column on the top layer 110-The signal line of the top layer port
111-顶层信号线 201-硅衬底111-top layer signal line 201-silicon substrate
202-第一介质环 203-接地屏蔽环202-first dielectric ring 203-ground shielding ring
204-第二介质环 205-后信号互连柱204-Second dielectric ring 205-Rear signal interconnection post
206-前信号互连柱 301-底层第一介质层206-front signal interconnection column 301-bottom first dielectric layer
302-底层接地屏蔽环 303-底层第一信号互连柱302 - Bottom ground shielding ring 303 - Bottom first signal interconnection column
304-底层接地柱 305-底层接地层304 - Bottom ground post 305 - Bottom ground plane
306-底层介质环 307-底层第二信号互连柱306-bottom dielectric ring 307-bottom second signal interconnection column
308-底层第二介质层 309-底层第三信号互连柱308-the second dielectric layer at the bottom 309-the third signal interconnection column at the bottom
310-底层端口信号线 311-底层信号线310-bottom port signal line 311-bottom signal line
具体实施方式：Detailed ways:
下面对本发明的具体实施方式详细说明。Specific embodiments of the present invention will be described in detail below.
为叙述方便，下文中称的“上”“下”“左”“右”均与附图的上下左右方向一致，但并不对本发明的结构起限制左右。For the convenience of description, the "up", "down", "left" and "right" referred to below are all consistent with the up, down, left, and right directions of the drawings, but do not limit the structure of the present invention.
具体实施例1Specific embodiment 1
如图1和图2所示，一种基于同轴硅通孔的改进型分支线耦合器，包括顶层模块、硅衬底层模块和底层模块，所述顶层模块设置在所述硅衬底层模块的上表面，所述底层模块设置在所述硅衬底层模块的下表面；As shown in Figures 1 and 2, an improved branch line coupler based on coaxial TSVs includes a top module, a silicon substrate module and a bottom module, and the top module is arranged on the silicon substrate module. On the upper surface, the bottom layer module is arranged on the lower surface of the silicon substrate layer module;
所述顶层模块包括顶层第一介质层101、顶层接地屏蔽环102、顶层第一信号互连柱103、顶层接地柱104、顶层接地层105、顶层介质环106、顶层第二信号互连柱107、顶层第二介质层108、顶层第三信号互连柱109、顶层端口信号线110、顶层信号线111；The top module includes a top first dielectric layer 101, a top ground shielding ring 102, a top first signal interconnection column 103, a top ground column 104, a top ground layer 105, a top dielectric ring 106, and a top second signal interconnection column 107 , the second dielectric layer 108 on the top layer, the third signal interconnection column 109 on the top layer, the port signal line 110 on the top layer, and the signal line 111 on the top layer;
所述硅衬底层模块包括硅衬底201、第一介质环202、接地屏蔽环203、第二介质环204、后信号互连柱205、前信号互连柱206；The silicon substrate layer module includes a silicon substrate 201, a first dielectric ring 202, a ground shield ring 203, a second dielectric ring 204, a rear signal interconnection column 205, and a front signal interconnection column 206;
所述底层模块包括底层第一介质层301、底层接地屏蔽环302、底层第一信号互连柱303、底层接地柱304、底层接地层305、底层介质环306、底层第二信号互连柱307、底层第二介质层308、底层第三信号互连柱309、底层端口信号线310、底层信号线311；The bottom module includes a bottom first dielectric layer 301, a bottom ground shielding ring 302, a bottom first signal interconnection column 303, a bottom ground column 304, a bottom ground layer 305, a bottom dielectric ring 306, and a bottom second signal interconnection column 307 , the bottom second dielectric layer 308, the bottom third signal interconnection column 309, the bottom port signal line 310, and the bottom signal line 311;
所述顶层信号线111左侧和右侧设有两个沿所述耦合器中心线呈左右轴对称分布的顶层端口信号线110，所述两个顶层端口信号线110和顶层信号线111依次相连，所述顶层信号线111的长度为1/4波长；The left side and the right side of the top layer signal line 111 are provided with two top layer port signal lines 110 symmetrically distributed along the left and right axes along the center line of the coupler, and the two top layer port signal lines 110 are connected to the top layer signal line 111 in sequence , the length of the top layer signal line 111 is 1/4 wavelength;
所述顶层第二介质层108设有两个沿所述耦合器中心线呈左右轴对称分布的顶层第三信号互连柱109；The second dielectric layer 108 on the top layer is provided with two third signal interconnection columns 109 on the top layer symmetrically distributed along the left and right axes along the center line of the coupler;
所述顶层接地层105设有两个沿所述耦合器中心线呈左右轴对称分布的顶层第二信号互连柱107，在所述顶层接地层105与所述顶层第二信号互连柱107之间设有顶层介质环106；The top ground layer 105 is provided with two top layer second signal interconnection columns 107 symmetrically distributed along the left and right axis of the coupler center line, and the top layer ground layer 105 and the top layer second signal interconnection column 107 There is a top dielectric ring 106 between them;
所述顶层接地层105、顶层第二介质层108、顶层端口信号线110成微带传输线结构，所述微带传输线结构的特性阻抗为50欧姆；The top ground layer 105, the top second dielectric layer 108, and the top port signal line 110 form a microstrip transmission line structure, and the characteristic impedance of the microstrip transmission line structure is 50 ohms;
所述顶层第一介质层101设有两个沿耦合器中心线呈左右轴对称分布的顶层接地屏蔽环102，在每个顶层接地屏蔽环102中心的后部设有顶层第一信号互连柱103，在每个顶层接地屏蔽环102中心的前部设有顶层接地柱104，两个顶层第一信号互连柱103和两个顶层接地柱104关于耦合器中心对称；The first dielectric layer 101 on the top layer is provided with two top ground shielding rings 102 symmetrically distributed along the center line of the coupler, and the first signal interconnection column on the top layer is arranged at the rear of the center of each top ground shield ring 102 103, a top-layer grounding column 104 is provided at the front of the center of each top-layer ground shielding ring 102, and the two top-layer first signal interconnection columns 103 and the two top-layer grounding columns 104 are symmetrical about the center of the coupler;
所述硅衬底201设有两个沿耦合器中心线呈左右轴对称分布的接地屏蔽环203，在所述接地屏蔽环203外侧与所述硅衬底201之间设有第一介质环202；The silicon substrate 201 is provided with two ground shielding rings 203 symmetrically distributed along the left and right axes along the center line of the coupler, and a first dielectric ring 202 is provided between the outside of the ground shielding rings 203 and the silicon substrate 201 ;
每个接地屏蔽环203中心后部设有后信号互连柱205，所述每个接地屏蔽环203中心前部设有前信号互连柱206，两个后信号互连柱205和两个前信号互连柱206关于耦合器中心对称，在所述后信号互连柱205、前信号互连柱206与接地屏蔽环203之间设有第二介质环204；A rear signal interconnection column 205 is provided at the center rear of each ground shielding ring 203, a front signal interconnection column 206 is provided at the center front of each ground shielding ring 203, two rear signal interconnection columns 205 and two front The signal interconnection column 206 is symmetrical about the center of the coupler, and a second dielectric ring 204 is provided between the rear signal interconnection column 205, the front signal interconnection column 206 and the ground shielding ring 203;
所述后信号互连柱205、前信号互连柱206、接地屏蔽环203形成耦合传输线结构，长度为1/4波长；The rear signal interconnection column 205, the front signal interconnection column 206, and the ground shielding ring 203 form a coupled transmission line structure with a length of 1/4 wavelength;
所述底层第一介质层301设有两个沿耦合器中心线呈左右轴对称分布的底层接地屏蔽环302，在所述每个底层接地屏蔽环302中心的后部设有底层第一信号互连柱303，在所述每个底层接地屏蔽环302中心的前部设有底层接地柱304，两个底层第一信号互连柱303和两个底层接地柱304关于耦合器中心对称；The bottom first dielectric layer 301 is provided with two bottom ground shielding rings 302 symmetrically distributed along the left and right axis of the coupler center line, and the bottom first signal interconnection is arranged at the rear of the center of each bottom ground shield ring 302. Connecting posts 303, a bottom grounding post 304 is provided at the front of the center of each bottom grounding shielding ring 302, and the two bottom first signal interconnect posts 303 and the two bottom ground posts 304 are symmetrical about the center of the coupler;
所述底层接地层305设有两个沿耦合器中心线呈左右轴对称分布的底层第二信号互连柱307，在所述底层接地层305与所述底层第二信号互连柱307之间设有底层介质环306；The bottom ground layer 305 is provided with two bottom second signal interconnection columns 307 symmetrically distributed along the left and right axes along the center line of the coupler, between the bottom ground layer 305 and the bottom second signal interconnection columns 307 A bottom dielectric ring 306 is provided;
所述底层第二介质层308设有两个沿耦合器中心线呈左右轴对称分布的底层第三信号互连柱309；The bottom second dielectric layer 308 is provided with two bottom third signal interconnection columns 309 distributed symmetrically along the left and right axes along the centerline of the coupler;
所述底层信号线311的左侧和右侧设有两个沿所述耦合器中心线呈左右轴对称分布的底层端口信号线310，两个底层端口信号线310和底层信号线311依次相连，所述底层信号线311的长度为1/4波长；The left and right sides of the bottom signal line 311 are provided with two bottom port signal lines 310 symmetrically distributed along the center line of the coupler, and the two bottom port signal lines 310 are connected to the bottom signal line 311 in sequence. The length of the bottom signal line 311 is 1/4 wavelength;
所述底层接地层305、底层第二介质层308、底层端口信号线310形成微带传输线结构，所述微带传输线结构的特性阻抗为50欧姆；The bottom ground layer 305, the bottom second dielectric layer 308, and the bottom port signal line 310 form a microstrip transmission line structure, and the characteristic impedance of the microstrip transmission line structure is 50 ohms;
所述顶层信号线111、顶层第三信号互连柱109、顶层第二信号互连柱107、顶层第一信号互连柱103、后信号互连柱205、底层接地柱304、底层接地层305自上而下依次相连；The top signal line 111, the third signal interconnection column 109 on the top layer, the second signal interconnection column 107 on the top layer, the first signal interconnection column 103 on the top layer, the rear signal interconnection column 205, the bottom ground column 304, and the bottom ground layer 305 Connected sequentially from top to bottom;
所述底层信号线311、底层第三信号互连柱309、底层第二信号互连柱307、底层第一信号互连柱303、前信号互连柱206、顶层接地柱104、顶层接地层105自下而上依次相连；The bottom signal line 311, the bottom third signal interconnection column 309, the bottom second signal interconnection column 307, the bottom first signal interconnection column 303, the front signal interconnection column 206, the top ground column 104, and the top ground layer 105 Connected sequentially from bottom to top;
所述顶层接地层105、顶层接地屏蔽环102、接地屏蔽环203、底层接地屏蔽环302、底层接地层305自上而下依次相连；The top ground layer 105, the top ground shield ring 102, the ground shield ring 203, the bottom ground shield ring 302, and the bottom ground layer 305 are sequentially connected from top to bottom;
所述顶层第二介质层108、顶层介质环106、顶层第一介质层101、第二介质环204、底层第一介质层301、底层介质环306、底层第二介质层308自上而下依次相连；The top second dielectric layer 108, the top dielectric ring 106, the top first dielectric layer 101, the second dielectric ring 204, the bottom first dielectric layer 301, the bottom dielectric ring 306, and the bottom second dielectric layer 308 in order from top to bottom connected;
所述顶层第一介质层101、第一介质环202、底层第一介质层301自上而下依次相连。The top first dielectric layer 101 , the first dielectric ring 202 , and the bottom first dielectric layer 301 are sequentially connected from top to bottom.
进一步地，所述顶层接地屏蔽环102、接地屏蔽环203、底层接地屏蔽环302的中心处于同一条直线上。Further, the centers of the top ground shielding ring 102 , the ground shielding ring 203 , and the bottom ground shielding ring 302 are on the same straight line.
进一步地，所述顶层第三信号互连柱109、顶层第二信号互连柱107、顶层介质环106、顶层第一信号互连柱103、后信号互连柱205、底层接地柱304的中心处于同一条直线上。Further, the center of the third signal interconnection column 109 on the top layer, the second signal interconnection column 107 on the top layer, the dielectric ring 106 on the top layer, the first signal interconnection column 103 on the top layer, the rear signal interconnection column 205, and the ground column 304 on the bottom layer on the same straight line.
进一步地，所述底层第三信号互连柱309、底层第二信号互连柱307、底层介质环306、底层第一信号互连柱303、前信号互连柱206、顶层接地柱104的中心处于同一条直线上。Further, the bottom third signal interconnection column 309, the bottom layer second signal interconnection column 307, the bottom layer dielectric ring 306, the bottom layer first signal interconnection column 303, the front signal interconnection column 206, and the center of the top layer ground column 104 on the same straight line.
进一步地，所述基于同轴硅通孔的改进型分支线耦合器左右轴对称。Further, the improved branch line coupler based on coaxial TSVs is symmetrical to the left and right axes.
作为本发明中一种基于同轴硅通孔的改进型分支线耦合器的一种优选方案：所述顶层端口信号线110、顶层信号线111、底层端口信号线310、底层信号线311为铜线；As a preferred solution of an improved branch line coupler based on coaxial silicon vias in the present invention: the top port signal line 110, the top layer signal line 111, the bottom port signal line 310, and the bottom signal line 311 are copper Wire;
所述顶层接地层105、底层接地层305为铜层。The top ground layer 105 and the bottom ground layer 305 are copper layers.
作为本发明中一种基于同轴硅通孔的改进型分支线耦合器的一种优选方案：所述顶层第三信号互连柱109、顶层第二信号互连柱107、顶层第一信号互连柱103、顶层接地柱104、后信号互连柱205、前信号互连柱206、底层接地柱304、底层第一信号互连柱303、底层第二信号互连柱307、底层第三信号互连柱309为铜柱。As a preferred solution of an improved branch line coupler based on coaxial silicon vias in the present invention: the third signal interconnection column 109 on the top layer, the second signal interconnection column 107 on the top layer, the first signal interconnection column on the top layer Connecting column 103, top grounding column 104, rear signal interconnection column 205, front signal interconnection column 206, bottom grounding column 304, bottom first signal interconnection column 303, bottom second signal interconnection column 307, bottom third signal interconnection column Interconnect pillars 309 are copper pillars.
作为本发明中一种基于同轴硅通孔的改进型分支线耦合器的一种优选方案：所述顶层接地屏蔽环102、接地屏蔽环203、底层接地屏蔽环302为铜环。As a preferred solution of an improved branch line coupler based on coaxial TSVs in the present invention: the top ground shielding ring 102 , the ground shielding ring 203 , and the bottom ground shielding ring 302 are copper rings.
作为本发明中一种基于同轴硅通孔的改进型分支线耦合器的一种优选方案：所述顶层第二介质层108、顶层第一介质层101、底层第一介质层301、底层第二介质层308为二氧化硅层、氮化硅层或苯并环丁烯层，所述顶层介质环106、第一介质环202、第二介质环204、底层介质环306为二氧化硅环。As a preferred solution of an improved branch line coupler based on coaxial silicon vias in the present invention: the top second dielectric layer 108, the top first dielectric layer 101, the bottom first dielectric layer 301, the bottom first dielectric layer The second dielectric layer 308 is a silicon dioxide layer, a silicon nitride layer or a benzocyclobutene layer, and the top dielectric ring 106, the first dielectric ring 202, the second dielectric ring 204, and the bottom dielectric ring 306 are silicon dioxide rings. .
具体实施例2Specific embodiment 2
与具体实施例1大致相同，区别仅仅在于：Roughly the same as specific embodiment 1, the difference only lies in:
顶层端口信号线110、顶层信号线111、底层端口信号线310、底层信号线311为银线；所述顶层接地层105、底层接地层305为银层。The top port signal line 110, the top signal line 111, the bottom port signal line 310, and the bottom signal line 311 are silver lines; the top ground layer 105 and the bottom ground layer 305 are silver layers.
顶层第三信号互连柱109、顶层第二信号互连柱107、顶层第一信号互连柱103、顶层接地柱104、后信号互连柱205、前信号互连柱206、底层接地柱304、底层第一信号互连柱303、底层第二信号互连柱307、底层第三信号互连柱309为银柱。The third signal interconnection pillar 109 on the top layer, the second signal interconnection pillar 107 on the top layer, the first signal interconnection pillar 103 on the top layer, the grounding pillar 104 on the top layer, the rear signal interconnection pillar 205, the front signal interconnection pillar 206, and the bottom grounding pillar 304 , the bottom first signal interconnection pillar 303 , the bottom second signal interconnection pillar 307 , and the bottom third signal interconnection pillar 309 are silver pillars.
顶层接地屏蔽环102、接地屏蔽环203、底层接地屏蔽环302为银环。The top ground shield ring 102, the ground shield ring 203, and the bottom ground shield ring 302 are silver rings.
顶层第二介质层108、顶层第一介质层101、底层第一介质层301、底层第二介质层308为二氧化硅层、氮化硅层或苯并环丁烯层，所述顶层介质环106、第一介质环202、第二介质环204、底层介质环306为氮化硅环。The top second dielectric layer 108, the top first dielectric layer 101, the bottom first dielectric layer 301, and the bottom second dielectric layer 308 are silicon dioxide layers, silicon nitride layers or benzocyclobutene layers, and the top dielectric ring 106. The first dielectric ring 202, the second dielectric ring 204, and the bottom layer dielectric ring 306 are silicon nitride rings.
具体实施例3Specific embodiment 3
与具体实施例1大致相同，区别仅仅在于：Roughly the same as specific embodiment 1, the difference only lies in:
所述顶层第三信号互连柱109、顶层第二信号互连柱107、顶层第一信号互连柱103、顶层接地柱104、后信号互连柱205、前信号互连柱206、底层接地柱304、底层第一信号互连柱303、底层第二信号互连柱307、底层第三信号互连柱309为钨柱。The third signal interconnection column 109 on the top layer, the second signal interconnection column 107 on the top layer, the first signal interconnection column 103 on the top layer, the grounding column 104 on the top layer, the rear signal interconnection column 205, the front signal interconnection column 206, and the bottom layer grounding column The column 304 , the bottom first signal interconnection column 303 , the bottom second signal interconnection column 307 , and the bottom third signal interconnection column 309 are tungsten columns.
顶层接地屏蔽环102、接地屏蔽环203、底层接地屏蔽环302为钨环。The top ground shielding ring 102, the ground shielding ring 203, and the bottom ground shielding ring 302 are tungsten rings.
顶层第二介质层108、顶层第一介质层101、底层第一介质层301、底层第二介质层308为二氧化硅层、氮化硅层或苯并环丁烯层，所述顶层介质环106、第一介质环202、第二介质环204、底层介质环306为苯并环丁烯环。The top second dielectric layer 108, the top first dielectric layer 101, the bottom first dielectric layer 301, and the bottom second dielectric layer 308 are silicon dioxide layers, silicon nitride layers or benzocyclobutene layers, and the top dielectric ring 106. The first dielectric ring 202, the second dielectric ring 204, and the bottom dielectric ring 306 are benzocyclobutene rings.
具体实施例4Specific embodiment 4
与具体实施例1大致相同，区别仅仅在于：Roughly the same as specific embodiment 1, the difference only lies in:
所述顶层第三信号互连柱109、顶层第二信号互连柱107、顶层第一信号互连柱103、顶层接地柱104、后信号互连柱205、前信号互连柱206、底层接地柱304、底层第一信号互连柱303、底层第二信号互连柱307、底层第三信号互连柱309为多晶硅柱。The third signal interconnection column 109 on the top layer, the second signal interconnection column 107 on the top layer, the first signal interconnection column 103 on the top layer, the grounding column 104 on the top layer, the rear signal interconnection column 205, the front signal interconnection column 206, and the bottom layer grounding column The pillar 304 , the bottom first signal interconnection pillar 303 , the bottom second signal interconnection pillar 307 , and the bottom third signal interconnection pillar 309 are polysilicon pillars.
顶层接地屏蔽环102、接地屏蔽环203、底层接地屏蔽环302为多晶硅环。The top ground shield ring 102 , the ground shield ring 203 , and the bottom ground shield ring 302 are polysilicon rings.
上面对本发明的实施方式做了详细说明。但是本发明并不限于上述实施方式，在所属技术领域普通技术人员所具备的知识范围内，还可以在不脱离本发明宗旨的前提下做出各种变化。The embodiments of the present invention have been described in detail above. However, the present invention is not limited to the above-mentioned embodiments, and various changes can be made within the scope of knowledge of those skilled in the art without departing from the gist of the present invention.
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