CN119704039A - Wafer grinding piece and manufacturing method thereof, grinding equipment and method for processing wafer - Google Patents

Abstract

The embodiment of the application discloses a wafer grinding piece, a manufacturing method thereof, grinding equipment and a method for processing a wafer, relates to the technical field of grinding, and solves the problem of unstable polishing rate of the conventional chemical mechanical polishing machine. The wafer grinding piece comprises a substrate and an abrasive layer, wherein the abrasive layer is arranged on the substrate. The abrasive layer comprises a first binder, a first abrasive and a photodecomposition type sensitizer. The first abrasive and the photodecomposition-type photosensitive agent are dispersed in and bonded by the first binder. The wafer grinding piece is matched with the plurality of light-emitting devices, and the chemical bond breakage of the photodecomposition type photosensitizer of the grinding layer can be controlled by controlling the on-off of the plurality of light-emitting devices, so that the photodecomposition type photosensitizer is decomposed, and the dissolution speed of the first abrasive in the area is accelerated. Therefore, the dissolution rate of the first abrasive in different areas of the grinding layer on the wafer grinding piece is accurately controlled, so that the polishing rate of the grinding device is stable.

Description

Wafer grinding piece and manufacturing method thereof, grinding equipment and method for processing wafer

Technical Field

The present application relates to the field of polishing technologies, and in particular, to a wafer polishing member, a method for manufacturing the wafer polishing member, a polishing apparatus, and a method for processing a wafer.

Background

Polishing pads (polishing pads) are one of the important components in semiconductor grinding and polishing equipment. The polishing pad is formed by fixing polishing particles to a sheet with an adhesive. Taking a chemical mechanical polisher as an example, the polishing pad is mounted opposite the wafer. By rotating the polishing pad relative to the wafer, or rotating the wafer relative to the polishing pad, and spraying the polishing liquid, a moving pressure and friction force is created between the abrasive disk and the wafer. Thereby, grinding and polishing of the wafer surface is achieved. However, the existing chemical mechanical polishing machine has the problem of unstable polishing rate.

Disclosure of Invention

The embodiment of the application provides a wafer grinding piece, a manufacturing method thereof, grinding equipment and a method for processing a wafer, which solve the problem of unstable polishing rate of the conventional chemical mechanical polishing machine.

In order to achieve the above purpose, the application adopts the following technical scheme:

In a first aspect, embodiments of the present application provide a wafer polishing article that may be used in mechanical polishing processes, chemical mechanical polishing processes, and thinning processes. For example, the wafer polishing member is a wafer polishing pad, a wafer polishing wheel, or the like. The wafer polishing member includes a substrate and a polishing layer, wherein the substrate can serve as a support layer. The abrasive layer is disposed on the substrate. The abrasive layer comprises a first abrasive, a photodecomposition type sensitizer and a first binder. The first abrasive and the photodecomposition-type photosensitive agent are dispersed in and bonded by the first binder.

Compared with the prior art, the polishing layer in the wafer polishing piece is additionally provided with the photodecomposition type sensitizer. When the wafer grinding piece is adopted to grind the wafer, a plurality of light emitting devices can be additionally arranged in the grinding equipment to work together with the wafer grinding piece. The plurality of light emitting devices are disposed at positions corresponding to different regions of the polishing layer. When it is desired to increase the dissolution rate of the first abrasive in some areas of the wafer polishing article corresponding to the wafer, the light emitting device corresponding to that area may be turned on. The light beam emitted by the light-emitting device can break the chemical bond of the photodecomposition type photosensitizer of the polishing layer in the region of the wafer polishing piece, and the photodecomposition type photosensitizer is decomposed, so that the dissolution rate of the first abrasive in the region is increased. Therefore, the dissolution rate of the first abrasive in different areas on the wafer grinding piece can be accurately controlled by controlling the on-off of the plurality of light-emitting devices. Therefore, the dissolution rate of the first abrasive in different areas on the wafer grinding piece can be kept stable, so that the polishing rate of grinding equipment (such as a wafer grinding polisher) is stable. Meanwhile, the problem of stress concentration in the grinding process is reduced, and the grinding uniformity of the first grinding material in the wafer grinding piece is improved.

Also, in some embodiments of the present application, the above-described photodecomposition-type sensitizer includes any one of dichromate compounds, diazonium compounds, silver salts, or alkali-soluble resins having an alkylene oxide group. For example, the photodecomposition sensitizer is Diazo Naphthoquinone (DNQ). The materials have the advantages of high resolution, good step coverage, good contrast and the like.

In some embodiments of the present application, the first abrasive in the abrasive layer includes any one or any several of silicon oxide, cerium oxide, aluminum oxide, or diamond powder. And, the abrasive layer can also include other components, and the first abrasive material can grind different materials with other components. For example, silicon oxide, polysilicon, metallic tungsten, metallic copper, etc., are subjected to chemical mechanical polishing.

In addition, in some embodiments, a plurality of diversion trenches are further formed on the abrasive layer, and the plurality of diversion trenches are arranged at intervals. When the polishing machine is applied to a chemical mechanical polishing machine, the plurality of diversion trenches can lead out the polishing liquid rapidly and uniformly, so that the polishing uniformity is improved.

In some embodiments of the present application, a light shielding layer is covered on a wall of the flow guide groove. The light beam emitted by the light-emitting device is blocked by the shading layer and cannot irradiate on the groove wall of the diversion trench, and the groove wall of the diversion trench cannot be dissolved in an accelerating way. Therefore, the breakage caused by the too high dissolution speed of the side wall of the diversion trench is avoided.

Similarly, since the bottom of the channel does not need to grind or polish the wafer, it is generally not necessary to increase the dissolution rate of the channel bottom. Therefore, in some embodiments of the present application, the bottom of the diversion trench is also covered with a light shielding layer.

Based on the above, the light shielding layer on the groove wall and the groove bottom of the diversion trench can comprise carbon powder to realize the light-proof performance. The light shielding layer may further include a second abrasive, for example, the second abrasive is any one or more of a silicon oxide compound, a cerium oxide compound, an aluminum oxide compound, and diamond powder, so that the light shielding layer may also polish the wafer at the same time, and maintain the same polishing speed as the groove wall of the diversion trench. And the shading layer on the groove wall and the groove bottom of the diversion trench further comprises a second adhesive, and carbon powder and a second abrasive are dispersed in the second adhesive. The second binder may bind the carbon powder and the second abrasive together.

In a second aspect, embodiments of the present application further include a method for manufacturing a wafer polishing member. The manufacturing method of the wafer grinding piece comprises the following steps of mixing a first binder, a first abrasive and a photodecomposition type sensitizer to obtain a mixed solution. The mixed liquid is coated on a substrate to form an abrasive layer. The abrasive layer is cured. The manufacturing method of the wafer grinding piece can realize the manufacturing of the wafer grinding piece described in the embodiment, and the wafer grinding piece can solve the same technical problems and obtain the same technical effects, and are not repeated here.

Based on the above method, in some embodiments of the present application, the method for manufacturing the wafer polishing member further includes forming a plurality of diversion trenches on the polishing layer between coating the mixed liquid on the substrate to form the polishing layer and curing the polishing layer. Thus, a wafer polishing member having a flow guide groove was produced.

Also, in some embodiments, after curing the abrasive layer, the method of making the wafer abrasive further includes forming a light shielding layer on a surface of the abrasive layer remote from the substrate. And curing the light shielding layer. And removing the shading layer in other areas except the groove surface of the diversion groove on the abrasive layer. Thereby, the diversion trench with the shading layer is formed on the trench wall and the trench bottom.

In a third aspect, embodiments of the present application further include a polishing apparatus, which may be a wafer thinning machine, a chemical mechanical polishing machine, or the like. The polishing apparatus includes a polishing member loading device, the wafer polishing member described in the above embodiment, a wafer loading device, and a plurality of light emitting devices. Wherein the wafer polishing member may be disposed on the polishing member loading apparatus. The wafer loading device is used for loading wafers to be ground. The wafer polishing member on the polishing member loading device may be disposed opposite to the wafer on the wafer loading device. The grinding piece loading device is used for driving the wafer grinding piece to rotate or the wafer loading device is used for driving the wafer to rotate. Therefore, moving pressure and friction force are formed between the wafer grinding piece and the wafer, so that grinding, polishing, thinning and the like of the wafer by the wafer grinding piece are realized. The plurality of light emitting devices are respectively arranged opposite to the plurality of areas of the polishing layer in the wafer polishing piece. And, a plurality of light emitting devices are used for controlling the dissolution of the photodecomposition type photosensitizer in the wafer polishing member. Therefore, the grinding speed of different areas of the grinding layer in the wafer grinding piece is controlled, so that the dissolution rate of the first grinding material in different areas on the wafer grinding piece is kept stable, and the polishing rate of the grinding equipment (such as a wafer grinding polisher) is stable.

Based on the above, in some embodiments of the present application, the photodecomposition type sensitizer is a dichromate type compound or a diazonium type compound, and the light emitting device is an ultraviolet lamp. The photodecomposition type sensitizer is silver salt or alkali-soluble resin having alkylene oxide group, and the light-emitting device is an infrared lamp. Therefore, the wafer grinding piece is suitable for wafer grinding pieces of various different materials.

Also, in some embodiments of the present application, the above-described polishing apparatus further includes a polishing liquid supply device for supplying a polishing liquid.

In a fourth aspect, an embodiment of the present application further includes a method for processing a wafer using the polishing apparatus of the above embodiment. The method includes loading a wafer on a wafer loading device. The wafer polishing member on the polishing member loading device is controlled to contact the wafer on the wafer loading device. The wafer grinding piece on the grinding piece loading device or the wafer on the wafer loading device is controlled to rotate so as to grind the wafer. The opening and closing of the light emitting devices are controlled respectively to adjust the dissolution rate of the photodecomposition type photosensitizer in the wafer grinding piece. Therefore, the polishing device can control the polishing speed of the wafer polishing piece on the wafer, so that the polishing speed on the wafer is stable.

Also, in some embodiments of the present application, the method further comprises controlling the slurry supply device to supply or stop supplying the slurry to the wafer polishing member after controlling the wafer polishing member on the polishing member loading device to contact the wafer on the wafer loading device.

Drawings

In order to describe the technical solution of the embodiment of the present application, the drawings required to be used in the embodiment of the present application will be described below.

FIG. 1 is a schematic view of a grinding apparatus according to an embodiment of the present application;

FIG. 2 is a schematic view of a wafer polishing tool according to an embodiment of the present application;

FIG. 3 is a cross-sectional view of a wafer polishing article according to an embodiment of the present application;

FIG. 4 is a perspective view of a wafer thinning machine according to an embodiment of the present application;

FIG. 5 is a schematic view of a polishing apparatus according to an embodiment of the present application;

FIG. 6 is a schematic view showing a structure of a polishing apparatus according to an embodiment of the present application, the polishing apparatus including a polishing liquid supply device;

FIG. 7 is a schematic view of a wafer thinning machine with a wafer polishing pad having a flow guiding groove according to an embodiment of the present application;

FIG. 8 is a schematic view of a wafer polishing pad with flow channels according to an embodiment of the present application;

FIG. 9 is a schematic view of a wafer polishing pad with a flow guiding groove and a first shielding layer according to an embodiment of the present application;

FIG. 10 is a schematic view of a wafer polishing pad with a flow guiding groove, a first shielding layer and a second shielding layer according to an embodiment of the present application;

FIG. 11 is a schematic perspective view of a chemical mechanical polisher according to an embodiment of the present application;

FIG. 12 is a schematic view showing a perspective view of a chemical mechanical polisher including a slurry arm according to an embodiment of the present application;

FIG. 13 is a top view of an embodiment of the polishing apparatus of the present application as a chemical mechanical polisher;

FIG. 14 is a schematic view of a mixing device;

FIG. 15 is a schematic view of a wafer polishing member processing apparatus;

fig. 16 is an enlarged view of a portion a in fig. 15;

Fig. 17 is an enlarged view of the portion B in fig. 15;

FIG. 18 is a schematic cross-sectional view of a wafer polishing member with a light shielding layer on a groove wall of a flow guiding groove according to an embodiment of the application.

Reference numerals:

1000-grinding equipment, 1000 a-wafer thinning machine, 1000 b-chemical mechanical polishing machine, 100-wafer grinding piece, 100 a-wafer grinding wheel, 101-first wafer grinding wheel, 100 b-wafer grinding pad, 1-substrate, 11-first surface, 2-grinding layer, 21-first adhesive, 22-first grinding material, 23-photodecomposition type photosensitive agent, 24-mixed liquid, 3-diversion groove, 4-shading layer, 4 a-first shading layer, 4 b-second shading layer, 200-grinding piece loading device, 200 a-rotating shaft, 200 b-rotating disc, 300-wafer loading device, 300 a-workbench, 301-clamping device, 300 b-wafer support, 400-light emitting device, 500-polishing liquid supply device, 500 b-grinding slurry arm, 2000-wafer, 3000-mixing device, 4000-grinding processing equipment, 10-unreeling roller, 20-transmission workbench, 30-first coating device, 40-grinding material layer curing device, 50-pattern printing roller, 60-second shading layer curing device and 80-grinding device.

Detailed Description

In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings.

Hereinafter, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", etc. may explicitly or implicitly include one or more such feature. In the description of the present application, unless otherwise indicated, the meaning of "a plurality" is two or more.

Furthermore, in the present application, the terms of orientation such as "upper," "lower," "left," "right," "horizontal," and "vertical" are defined with respect to the orientation in which the components in the drawings are schematically disposed, and it should be understood that these directional terms are relative terms, which are used for descriptive and clarity with respect thereto, and which may be correspondingly altered in response to changes in the orientation in which the components in the drawings are disposed.

In the present application, unless specifically stated and limited otherwise, the term "coupled" is to be construed broadly, e.g., the term "coupled" may refer to a mechanical, physical, or a combination of structures. For example, the two parts can be fixedly connected, detachably connected or integrated, and can be directly connected or indirectly connected through an intermediate medium. The circuit structure is also understood to be in physical contact and electrical conduction with components, and also understood to be in a form of connection between different components in a circuit structure through a PCB copper foil or a lead and other physical circuits capable of transmitting electric signals.

Embodiments of the present application include a polishing apparatus that may be used to finish, roughen, polish, etc., a wafer. Therefore, the method can be applied to a mechanical polishing process, a chemical mechanical polishing process or a semiconductor thinning process.

Fig. 1 shows a partial structure of a polishing apparatus according to an embodiment of the present application. Referring to fig. 1, the polishing apparatus 1000 includes a wafer polishing member 100, a polishing member loading device 200, and a wafer loading device 300. Wherein the wafer polishing member 100 is loaded on the polishing member loading device 200 and disposed opposite to the wafer loading device 300. By way of example, the wafer polishing member 100 is a wafer polishing pad, a wafer polishing wheel, or the like, and the application is not limited in this regard. The wafer loading apparatus 300 is used to load a wafer 2000, and the loaded wafer 2000 may be opposite to the wafer polishing member 100. One of the polishing member loading device 200 and the wafer loading device 300 is a rotating member. That is, the polishing member loading apparatus 200 may rotate the wafer polishing member 100, and the wafer loading apparatus 300 and the wafer 2000 remain stationary. Alternatively, the wafer loading apparatus 300 may rotate the wafer 2000, and the polishing member loading apparatus 200 and the wafer polishing member 100 may remain stationary. Thereby, finish grinding, rough grinding, polishing, or the like of the wafer 2000 by the wafer grinding member 100 is achieved.

In order to ensure good grinding or polishing of the wafer 2000, the grinding apparatus 1000 is required to maintain a stable grinding speed or polishing speed. It will be appreciated that the wafer polishing article 100 is an important factor affecting the polishing or grinding performance of the polishing apparatus 1000. Some polishing apparatuses 1000 adjust the polishing speed of the wafer polishing member 100 by adjusting the rotation speed of the wafer loading device 300 or the polishing member loading device 200. However, this method can only adjust the polishing rate of the entire polishing surface of the wafer polishing tool 100 at the same time, and cannot adjust the dissolution rate of the abrasive in a local region on the wafer polishing tool 100. For example, the dissolution rate of the abrasive in certain areas of the wafer polishing member 100 is slow, which causes stress concentration problems in the wafer polishing member 100, affecting the polishing effect.

Accordingly, embodiments of the present application provide a material improved wafer polishing article 100 that enables fine tuning of the rate of dissolution of abrasive material in localized areas of the wafer polishing article 100. Fig. 2 shows a perspective structure of the wafer polishing member 100 according to an embodiment of the present application, and fig. 3 shows a cross section of the wafer polishing member 100 according to an embodiment of the present application. Referring to fig. 2 and 3, a wafer polishing member 100 according to an embodiment of the present application includes a substrate 1 and an abrasive layer 2, the substrate 1 having a first surface 11, the abrasive layer 2 being disposed on the first surface 11 of the substrate 1. Wherein the substrate 1 serves as a support layer for the abrasive layer 2. The substrate 1 may be flexible or rigid, as the present application is not limited in this regard.

Also, the substrate 1 may be made of various materials. By way of example, the flexible substrate may comprise any one or more of a polymeric film, cloth, or paper, as the application is not limited in this regard. The polymer film may be a polyolefin film (such as polypropylene), a polyester film (such as polyethylene terephthalate), a polyamide film, a cellulose ester film, or the like. Also, the flexible substrate can be applied to a wafer polishing pad and a wafer polishing pad.

While rigid substrates may be used in wafer grinding wheels. By way of example, the rigid substrate may comprise any one or any number of metal plates, ceramic plates, or the like, as the application is not limited in this regard.

With continued reference to fig. 3, the abrasive layer 2 on the substrate 1 according to the embodiment of the present application includes a first binder 21, a first abrasive 22, and a photodecomposition-type sensitizer 23, where the first abrasive 22 and the photodecomposition-type sensitizer 23 are dispersed in the first binder 21 and are bonded by the first binder 21 to form an integrated film structure.

Compared to the conventional wafer polishing tool 100, the wafer polishing tool 100 of the embodiment of the application adds the photodecomposition type photosensitizer 23. The photodecomposition type sensitizer 23 requires that a plurality of light emitting devices 400 be added to the polishing apparatus 1000 to work with the wafer polishing tool 100. The grinding apparatus 1000 is further described below in connection with specific embodiments.

Fig. 4 shows a structure of a polishing apparatus 1000 according to an embodiment of the present application, which is a wafer thinning machine 1000 a. Referring to fig. 4 and 5, the wafer thinning machine 1000a includes a table 300a, a plurality of rotating shafts 200a, a plurality of wafer polishing wheels 100a, and a plurality of light emitting devices 400. The stage 300a includes a plurality of clamping devices 301 and a positioning device (not shown in the drawing), wherein the plurality of clamping devices 301 are used for fixing the wafer 2000, and the positioning device is used for ensuring the positioning accuracy of the wafer 2000 on the clamping devices 301. A plurality of rotation shafts 200a are mounted above the table 300 a. The plurality of wafer polishing wheels 100a are respectively mounted below the plurality of rotation shafts 200 a. The first abrasive 22 of the plurality of wafer grinding wheels 100a has different particle sizes and can be used to perform rough grinding, fine grinding and polishing on the wafer 2000, respectively. One wafer grinding wheel 100a of the plurality of wafer grinding wheels 100a is a first wafer grinding wheel 101. The first wafer grinding wheel 101 may be used to polish the wafer 2000.

Taking the structure of the wafer polishing member 100 described above as an example of the first wafer polishing wheel 101 of the plurality of wafer polishing wheels 100a shown in fig. 4 and 5, that is, the abrasive layer 2 in the first wafer polishing wheel 101 includes the photodecomposition-type sensitizer 23. The plurality of light emitting devices 400 are each installed at a position on the table 300a that can be opposite to the first wafer polishing wheel 101. The light emitting devices 400 respectively correspond to different areas of the abrasive layer 2 on the first wafer polishing wheel 101. When the photodecomposition type sensitizer 23 in the abrasive layer 2 is irradiated with the light beam emitted from the light emitting device 400, the chemical bond of the photodecomposition type sensitizer 23 is broken.

When the wafer thinning machine 1000a works, the first wafer grinding wheel 101 is controlled to contact the wafer 2000, and the rotating shaft 200a is controlled to drive the wafer grinding wheel 100a to rotate. Thus, the first wafer grinding wheel 101 may polish the wafer 2000. When it is desired to increase the dissolution rate of the first abrasive 22 on some region of the first wafer polishing wheel 101 corresponding to the wafer 2000, the light emitting device 400 corresponding to that region may be turned on. The light beam emitted by the light emitting device 400 may break the chemical bond of the photodecomposition type photosensitizer 23 of the abrasive layer 2 in the region of the first wafer grinding wheel 101, and the photodecomposition type photosensitizer 23 is decomposed, so that the dissolution rate of the first abrasive 22 in the region is increased. Therefore, the dissolution rate of the first abrasive 22 in different areas on the first wafer polishing wheel 101 can be precisely controlled by controlling the on/off of the plurality of light emitting devices 400. Thus, it is possible to achieve that the dissolution rate of the first abrasive 22 at different areas on the first wafer grinding wheel 101 remains stable, so that the polishing rate of the wafer thinning machine 1000a is stable. At the same time, the problem of stress concentration during polishing is reduced, and the polishing uniformity of the first abrasive 22 in the first wafer polishing wheel 101 is improved.

Further, it is understood that the light emitting device 400 needs to be selected according to the material of the photodecomposition type photosensitizer 23. In some embodiments of the present application, the above-described photodecomposition-type sensitizer 23 includes any one of dichromate compounds, diazonium compounds, silver salts, or alkali-soluble resins having an alkylene oxide group. The materials have the advantages of high resolution, good step coverage, good contrast ratio and the like. Therefore, when the material of the photodecomposition type sensitizer 23 is a silver salt or an alkali-soluble resin having an alkylene oxide group, the material can react with an infrared ray beam. Therefore, the light emitting device 400 employs an infrared lamp. As another example, when the material of the photodecomposition-type sensitizer 23 is a dichromate compound or a diazonium compound (such as diazonaphthoquinone), the material can react with an ultraviolet light beam. Therefore, the light emitting device 400 employs an ultraviolet lamp.

While for other components in the abrasive layer 2, in some embodiments of the present application, the first abrasive 22 in the abrasive layer 2 may include any one or any several of silica SiO ₂, ceria CeO ₂, alumina Al ₂O₃, or diamond powder. In addition, the abrasive layer 2 may further include other components, and the first abrasive 22 may be used in combination with other components to polish different materials of the wafer 2000, such as polishing or grinding the wafer 2000 of silicon oxide, polysilicon, tungsten metal, copper metal, etc.

Also, in some embodiments of the present application, the first binder 21 in the abrasive layer 2 may include an epoxy or acrylate. Also, the first binder 21 may further include a filler, such as a mixture of a nano-sized filler and a micro-sized filler, or a nano-sized filler.

The materials of the various components in the abrasive layer 2 are described above. In some embodiments, the wafer thinner 1000a further includes a polishing liquid supply apparatus 500 as shown in fig. 6, the polishing liquid supply apparatus 500 being used to supply the polishing liquid. The polishing liquid may contain abrasive grains, an oxidizing agent, a complexing agent, a surfactant, an abrasive, a pH adjuster, a corrosion inhibitor, and the like. The various components in the polishing solution can react with the wafer 2000 to form a thin, weakly bonded fluid film on the surface of the wafer 2000 to be processed. The abrasive particles in the fluid film and the polishing liquid can be used for trace removal of the surface of the wafer 2000 under the action of pressure and friction. Therefore, in the process of grinding or polishing the wafer 2000 by the first wafer grinding wheel 101, the polishing liquid supply device 500 is simultaneously controlled to spray the polishing liquid onto the first wafer grinding wheel 101, thereby optimizing the polishing effect. At the same time, the polishing liquid can also carry away the first abrasive 22 abraded by the abrasive layer 2 in the first wafer grinding wheel 101.

Therefore, in order to assist the polishing solution to timely guide out the first abrasive 22 polished with the wafer 2000, in some embodiments of the present application, the abrasive layer 2 in the first wafer polishing wheel 101 is formed with a plurality of flow guiding grooves 3 as shown in fig. 7, and the plurality of flow guiding grooves 3 are distributed at intervals. The plurality of guide grooves 3 may also intersect in a local area. Also, as shown in fig. 8, the flow guide groove 3 may extend from the inside toward the outside of the abrasive layer 2. Therefore, the plurality of diversion trenches 3 can accelerate and lead out the first abrasive 22 ground with the wafer 2000, thereby improving grinding uniformity.

However, in the grinding or polishing process, after the groove wall of the diversion trench 3 is irradiated by the light beam, the dissolution speed is high and the fracture is easy to occur. Therefore, referring to fig. 9, the wall of the diversion trench 3 in the embodiment of the present application is covered with the first light shielding layer 4a. The light beam emitted from the light emitting device 400 is blocked by the first light shielding layer 4a, and does not irradiate the groove wall of the diversion trench 3, and the groove wall of the diversion trench 3 is not dissolved in an accelerating way to generate fracture. Therefore, the breakage of the side wall of the diversion trench 3 caused by too high dissolution speed is avoided.

In addition, the bottom of the diversion trench 3 does not need to grind or polish the wafer 2000, so in some embodiments of the present application, as shown in fig. 10, the bottom of the diversion trench 3 is also covered with the second light shielding layer 4b. The light beam emitted from the light emitting device 400 is blocked by the second light shielding layer 4b, and does not irradiate the bottom of the diversion trench 3, and the bottom of the diversion trench 3 is not dissolved in an accelerated manner.

It should be noted that the first light shielding layer 4a and the second light shielding layer 4b of the diversion trench 3 may be manufactured by the same process, so as to save the process flow. Therefore, the first light shielding layer 4a and the second light shielding layer 4b of the flow guide groove 3 may be made of the same material. Of course, the first light shielding layer 4a and the second light shielding layer 4b of the diversion trench 3 may be made of different materials, which is not limited in the present application.

In some embodiments of the present application, the first light shielding layer 4a and the second light shielding layer 4b of the diversion trench 3 may each include carbon powder to achieve the light-tight performance. The first light shielding layer 4a further includes a second abrasive, for example, the second abrasive is any one or more of silicon oxide, cerium oxide, aluminum oxide, and diamond powder, so that the first light shielding layer 4a may grind the wafer 2000 at the same time, and maintain the same grinding speed as the groove wall of the diversion trench 3. Also, the second light shielding layer 4b may further include any one or any several of abrasive materials of silicon oxide, cerium oxide, aluminum oxide, or diamond powder. The first light shielding layer 4a and the second light shielding layer 4b of the diversion trench 3 further include a second adhesive in which a second abrasive and carbon powder are dispersed. The second binder may bind the carbon powder and the second abrasive together.

The polishing apparatus 1000 according to the embodiment of the present application is exemplified as the wafer thinning apparatus 1000 a. Fig. 11 also shows a structure in which the polishing apparatus 1000 is a chemical mechanical polisher according to an embodiment of the present application. Referring to fig. 11, the chemical mechanical polisher 1000b includes a rotating disk 200b, a wafer holder 300b, a wafer polishing pad 100b, and a plurality of light emitting devices 400, the rotating disk 200b being located directly below the wafer holder 300 b. The wafer holder 300b is used to hold the wafer 2000, and the wafer polishing pad 100b is fixed on the upper surface of the rotating disk 200 b. The abrasive layer 2 in the wafer polishing pad 100b may be made of the same structure and material as the abrasive layer 2 in the first wafer polishing wheel 101 in the above embodiment. The plurality of light emitting devices 400 respectively correspond to different regions of the abrasive layer 2 on the wafer polishing pad 100 b. When the photodecomposition type sensitizer 23 in the abrasive layer 2 is irradiated with the light beam emitted from the light emitting device 400, chemical bonds in the photodecomposition type sensitizer 23 are broken.

Also, the chemical mechanical polisher 1000b further includes a slurry arm 500b (slurry arm) as shown in fig. 12, the slurry arm 500b being disposed above the rotating disk 200 b. Slurry arm 500b may be hollow in structure. The polishing liquid may be directed onto the wafer polishing pad 100b through a conduit inside the slurry arm 500 b. As shown in fig. 12 and 13, the plurality of light emitting devices 400 may be fixed to the slurry arm 500b, and may be sequentially disposed along the extending direction of the slurry arm 500 b.

When the cmp machine 1000b is in operation, the wafer 2000 is controlled to contact the wafer polishing pad 100b, and the rotating disk 200b is controlled to rotate the wafer polishing pad 100 b. Thus, the wafer polishing pad 100b may polish the wafer 2000. Similarly, when it is desired to increase the dissolution rate of the first abrasive 22 in some regions of the wafer polishing pad 100b corresponding to the wafer 2000, the light-emitting device 400 corresponding to that region may be turned on. The light beam emitted from the light emitting device 400 may break the chemical bond of the photodecomposition type photosensitizer 23 of the polishing layer 2 in the region of the wafer polishing pad 100b, and the photodecomposition type photosensitizer 23 is decomposed, so that the dissolution rate of the first abrasive 22 in the region is increased. Therefore, the chemical mechanical polishing machine 1000b of the embodiment of the application can accurately control the dissolution rate of the first abrasive 22 in different areas on the wafer polishing pad 100b by controlling the on/off of the plurality of light emitting devices 400, so that the dissolution rate of the first abrasive 22 in different areas on the wafer polishing pad 100b can be kept stable, and the polishing rate stability is good. At the same time, the problem of stress concentration during polishing is reduced and the polishing uniformity of the first abrasive 22 in the wafer polishing pad 100b is improved.

The above description is mainly given of the structures and materials of the wafer polishing tool 100 and the polishing apparatus 1000. In order to achieve the above-mentioned manufacturing of the wafer polishing member 100, an embodiment of the present application further includes a manufacturing process of the wafer polishing member, which includes the following steps:

s100, mixing the first binder 21, the first abrasive 22 and the photodecomposition type sensitizer 23 to obtain a mixed solution 24.

For example, the first abrasive 22, the photodecomposition-type sensitizer 23, and the binder (liquid) are poured into the mixing device 3000 shown in fig. 14 to be mixed and stirred so that the first abrasive 22, the photodecomposition-type sensitizer 23 are uniformly dispersed in the first binder 21 (liquid).

The mixed liquid 24 is coated on the substrate 1 to form the abrasive layer 2.

By way of example, fig. 15 shows a structure of a wafer grinding member processing apparatus. As shown in fig. 15, the polishing apparatus 4000 includes an unreeling drum 10, a transfer table 20, and a first coating device 30, a multi-layered substrate 1 is wound around the unreeling drum 10, and the substrate 1 is transferred on the transfer table 20. The spray heads of the first coating device 30 face the substrate 1 on the transfer table 20. The first coating device 30 may coat the mixed liquid on the substrate 1 of the transfer table 20.

And S400, curing the abrasive layer 2.

As shown in fig. 15, the polishing apparatus 4000 further includes an abrasive layer curing device 40, and the abrasive layer curing device 40 may be a heating device or an ultraviolet lamp curing device. It should be noted that the abrasive layer curing device 40 may be an ultraviolet lamp curing device when the photosensitive spectrum of the photodecomposition type photosensitizer 23 is not ultraviolet spectrum.

Based on this, in some embodiments of the present application, between S200 and S400, further comprising:

s300, forming a plurality of diversion trenches 3 on the abrasive layer 2.

By way of example, with continued reference to fig. 15, the abrasive machining apparatus 4000 described above further includes a pattern printing cylinder 50 having a pattern of a plurality of channels 3 on the pattern printing cylinder 50. Thus, the pattern of the plurality of guide grooves 3 can be pressed on the abrasive layer 2 by the printing cylinder. Thus, the wafer polishing tool 100 having the flow guide grooves 3 is formed as shown in fig. 16.

Also, in some embodiments, after S400 above, the manufacturing method further includes:

S500, forming a light shielding layer 4 on the surface of the abrasive layer 2 away from the substrate 1.

As illustrated in fig. 15, the polishing apparatus 4000 further includes a second coating device 60, and the opening of the second coating device 60 is also directed toward the transfer table 20. The second coating device 60 may coat the light shielding material on the substrate 1 having the abrasive layer 2 on the transfer table 20. Thereby, the light shielding layer 4 is formed on the surface of the entire abrasive layer 2 away from the substrate 1, as shown in fig. 17.

And S600, curing the light shielding layer 4.

As shown in fig. 15, the polishing apparatus 4000 further includes a light shielding layer curing device 70, and the light shielding layer curing device 70 may be a heating device or an ultraviolet lamp curing device to cure the light shielding layer 4. And then, obtaining the wafer grinding piece roll through a winding device.

And S700, removing the shading layer 4 in other areas except the surface of the diversion trench 3 on the abrasive layer 2.

For example, the polishing device may be used in the embodiment of the present application to remove the light shielding layer 4 on the polishing layer 2 except for the surface of the diversion trench 3. Thus, a wafer polishing material having the groove walls and the groove bottom with the diversion trench 3 having the light shielding layer 4 is formed as shown in fig. 18.

The roll of the wafer polishing material may be cut according to the shape of the wafer polishing material 100. After that, the cut wafer polishing member is mounted on a polishing apparatus, and then the process S700 is performed, so as to obtain the desired wafer polishing member 100.

The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (13)

1. A wafer polishing article, comprising:

A substrate;

The polishing device comprises a substrate, an abrasive layer and a polishing layer, wherein the abrasive layer is arranged on the substrate and comprises a first abrasive, a photodecomposition type sensitizer and a first binder, and the first abrasive and the photodecomposition type sensitizer are dispersed in the first binder and are bonded through the first binder.

2. The wafer polishing article of claim 1, wherein the photodecomposition-sensitive agent comprises any one of a dichromate compound, a diazonium compound, a silver salt, or an alkali-soluble resin having an alkylene oxide group.

3. The wafer polishing article of claim 1 or 2, wherein the surface of the abrasive layer remote from the substrate is formed with a plurality of channels spaced apart from each other, the channels extending from the interior to the exterior of the abrasive layer.

4. The wafer polishing tool as set forth in claim 3, wherein a wall of the flow guide groove is covered with a light shielding layer.

5. The wafer polishing article of claim 3 or 4, wherein the groove bottom of the flow guide groove is covered with a light shielding layer.

6. The wafer abrasive of claim 4 or 5, wherein the light shielding layer comprises a second abrasive, carbon powder, and a second binder, the second abrasive and the carbon powder being dispersed in and bonded by the second binder.

7. The manufacturing method of the wafer grinding piece is characterized by comprising the following steps of:

mixing a first binder, a first abrasive and a photodecomposition type sensitizer to obtain a mixed solution;

Coating the mixed liquid on a substrate to form an abrasive layer;

And curing the abrasive layer.

8. The method of claim 7, further comprising, between said applying the mixture to a substrate to form an abrasive layer and said curing the abrasive layer:

And forming a plurality of diversion trenches on the abrasive layer.

9. The method of manufacturing a wafer polishing tool as recited in claim 8, wherein, after the curing of the abrasive layer, further comprising:

forming a light shielding layer on a surface of the abrasive layer away from the substrate;

Curing the shading layer;

and removing the shading layer in other areas except the groove surface of the diversion groove on the abrasive layer.

10. A grinding apparatus, comprising:

A grinding member loading device;

The wafer polishing article of any one of claims 1-6, disposed on the polishing article loading device;

the wafer loading device is arranged opposite to the wafer grinding piece; the wafer loading device is used for driving the wafer to rotate or the grinding piece loading device is used for driving the wafer grinding piece to rotate;

The light-emitting devices are arranged opposite to the areas of the polishing layer in the wafer polishing piece respectively, and are used for controlling the dissolution rate of the photodecomposition type photosensitizer in the wafer polishing piece.

11. The polishing apparatus according to claim 10, wherein the photodecomposition-type sensitizer is a dichromate compound or a diazonium compound, the light-emitting device is an ultraviolet lamp, or the photodecomposition-type sensitizer is a silver salt or an alkali-soluble resin having an alkylene oxide group, and the light-emitting device is an infrared lamp.

12. The grinding apparatus of claim 10 or 11, wherein the grinding apparatus is a chemical mechanical polisher or a wafer thinning machine.

13. A method of processing a wafer using the polishing apparatus of any one of claims 10-12, comprising the steps of:

loading a wafer on a wafer loading device;

controlling a wafer grinding piece on a grinding piece loading device to contact with a wafer on the wafer loading device;

Controlling a wafer grinding piece on the grinding piece loading device or a wafer on the wafer loading device to rotate so as to grind the wafer;

and respectively controlling the opening and closing of the plurality of light emitting devices so as to adjust the dissolution speed of the photodecomposition type photosensitizer in the wafer grinding piece.