CN119695623A - A tunable sub-nanosecond laser source with a double microchip structure - Google Patents
A tunable sub-nanosecond laser source with a double microchip structure Download PDFInfo
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Abstract
The invention discloses a tunable subnanosecond laser source with a double-microchip structure, which comprises a semiconductor laser, a focusing lens, a microchip subnanosecond laser, a microchip optical parametric oscillator and a temperature control chip, wherein the semiconductor laser is used for generating pumping light, converging the pumping light through the focusing lens and then making the pumping light enter the microchip subnanosecond laser to generate subnanosecond fundamental frequency laser, pumping the microchip optical parametric oscillator through the subnanosecond fundamental frequency laser to realize frequency conversion, outputting subnanosecond parametric light, and precisely controlling the temperature of the microchip optical parametric oscillator through the temperature control chip to realize tuning of subnanosecond parametric optical wavelength. The microchip optical parametric oscillator is composed of nonlinear crystals, a resonant cavity of the microchip optical parametric oscillator is composed of double-end coating films, and based on the cavity phase matching principle, the phase mismatch caused by nonlinear crystal dispersion is compensated by utilizing extra phase change introduced by the reflection of the resonant cavity of the microchip optical parametric oscillator. The light source is simple in structure, high in integration and high in stability, and can meet the application requirements of extremely severe scenes.
Description
Technical Field
The invention relates to the technical field of solid laser and nonlinear optical frequency conversion, in particular to a tunable subnanosecond laser source with a double microchip structure.
Background
Subnanosecond laser generally refers to pulse laser with pulse duration between hundred picoseconds and nanoseconds, and has narrower pulse width and higher peak power under the same single pulse energy compared with nanosecond pulse laser, and is easier to realize high-energy output compared with ultra-short laser such as picosecond laser, femtosecond laser and the like. These unique properties make it widely applicable in laser radar, laser remote sensing, laser induced breakdown plasma spectroscopy. The passive Q-switched microchip subnanosecond laser has the characteristics of excellent beam quality, narrow linewidth output and the like due to a compact structure and low cost, and has great potential in an integrated system.
However, the sub-nanosecond laser directly generated by the stimulated radiation process is single in frequency, cannot meet various application scenes such as a plurality of atmospheric transmission windows existing in a human eye safety wave band and a near infrared to middle infrared wave band, and meanwhile, most of common greenhouse gas characteristic absorption peaks are distributed in the wave band, so that the sub-nanosecond laser frequency is expanded, and the obtained tunable near middle infrared sub-nanosecond laser has important significance in the fields of laser communication, laser radar, photoelectric contrast, gas detection and the like. The nonlinear optical frequency conversion technology is an effective means for generating a tunable coherent light source, wherein an optical parameter process is a main method for laser down-conversion and mainly comprises optical parameter generation, optical parameter amplification and optical parameter oscillation.
The optical parametric generation technology directly pumps nonlinear crystals by using high-peak-power pulse lasers, parametric processes originate from quantum noise, which is amplified under the action of fundamental laser, and the wavelength of parametric light can be tuned by changing the phase matching conditions, e.g. by changing the crystal temperature or rotating the crystal angle. The method has simple structure, but needs the nonlinear crystal to have larger effective nonlinear coefficient and higher damage-resistant threshold, has more non-collinear phase matching processes in a free running state, has wider parametric light output linewidth and poorer beam quality, and is difficult to meet the practical application. The optical parametric generator can be used for injecting signal light seeds to reduce the threshold value, optimize the beam quality of the parametric light and remarkably narrow the line width, and the device can be actually regarded as an optical parametric amplifier. The optical parametric amplification technology is characterized in that the fundamental frequency laser is injected into the nonlinear crystal, and simultaneously, a low-frequency signal light seed is additionally injected, so that the signal light is amplified and idler frequency light is generated under a certain condition, and the process can be regarded as a process of three-wave mixing of the fundamental frequency laser, the signal light and the idler frequency light. Not only does this process require additional seed light sources, but the seed injection structure adds complexity and instability to the system. Besides the two methods, the optical parametric oscillation technology which is commonly used at present in the optical frequency down-conversion is not applicable to the sub-nanosecond laser frequency conversion, is limited by the pulse width and the repetition frequency of the sub-nanosecond laser, and cannot realize the traditional optical parametric oscillation and the synchronous pumping optical parametric oscillation. There is a need for a micro-chip subnanosecond laser to generate subnanosecond fundamental frequency laser, and by means of shortening the cavity length of the resonant cavity of the optical parametric oscillator, nonlinear optical frequency conversion of the subnanosecond laser is realized in the micro-chip optical parametric oscillator, so that a compact and highly integrated tunable subnanosecond laser system is realized, and the tunable subnanosecond laser system has a wide application prospect.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, provides a tunable subnanosecond laser source with a double-microchip structure, a semiconductor laser is used for pumping a microchip subnanosecond laser to generate subnanosecond fundamental frequency laser, nonlinear optical frequency conversion is realized in a microchip optical parametric oscillator based on a cavity phase matching principle, and the temperature of the microchip optical parametric oscillator is precisely controlled through a temperature control chip to realize tunable subnano laser output.
The invention aims at realizing the following technical scheme:
The tunable subnanosecond laser source with the double-microchip structure comprises a semiconductor laser, a focusing lens, a microchip subnanosecond laser, a microchip optical parametric oscillator and a temperature control chip which are sequentially arranged, wherein the semiconductor laser, the focusing lens, the microchip subnanosecond laser and the microchip optical parametric oscillator are coaxially arranged, the microchip optical parametric oscillator is fixed on the temperature control chip, the semiconductor laser generates pumping light, the pumping light is converged by the focusing lens and then enters the microchip subnanosecond laser to generate subnanosecond fundamental frequency laser, the pulse duration of the subnanosecond fundamental frequency laser is between hundred picoseconds and nanoseconds, the subnanosecond fundamental frequency laser pumps the microchip optical parametric oscillator to realize nonlinear optical frequency conversion of the subnanosecond laser, the pulse duration of the subnanosecond parametric light is between hundred picoseconds and nanoseconds, the microchip optical parametric oscillator is composed of nonlinear crystals, double-end coating films form a resonant cavity of the microchip optical parametric oscillator, and the nonlinear phase-mismatch of the micro-nanosecond optical parametric oscillator is realized by utilizing the principle that the resonant cavity of the microchip optical parametric oscillator is introduced into the nonlinear phase-controlled oscillator, and the nonlinear phase-controlled oscillation of the subnanosecond parametric oscillator is realized by the nonlinear phase-controlled oscillator.
Furthermore, the semiconductor laser is a laser diode, laser output is realized through an electric excitation mode, and the wavelength range of the emitted pumping light is 800-810 nm or 880-890 nm or 935-945 nm or 965-975 nm.
Further, the focusing lens is a convex lens, and the surface of the focusing lens is plated with an antireflection film with a wave band of 800-810 nm, 880-890 nm, 935-945 nm or 965-975 nm.
Further, the microchip subnanosecond laser comprises a laser crystal and a saturable absorber, and the laser crystal and the saturable absorber form the microchip subnanosecond laser through thermal diffusion bonding.
Further, the end face of the laser crystal close to the focusing lens of the microchip subnanosecond laser is plated with a pumping light wave band antireflection film and a subnanosecond fundamental frequency laser wave band high reflection film, the end face of the saturable absorber close to the microchip optical parametric oscillator is plated with a pumping light wave band antireflection film and a part of transmission film with 10% -90% of the subnanosecond fundamental frequency laser wave band, and two ends of the plated film form a resonant cavity of the microchip subnanosecond laser.
Further, the laser crystal is a YAG laser crystal doped with Nd 3+ or Yb 3+, specifically Nd YAG or Yb YAG, and is suitable for absorbing the pump light and generating oscillation laser in a resonant cavity of the micro-chip subnanosecond laser, and outputting subnanosecond fundamental frequency laser with 1064nm or 1030nm, the saturable absorber is a Q-switched crystal doped with Cr 4+, specifically Cr YAG, and is suitable for adjusting loss of the resonant cavity of the micro-chip subnanosecond laser, and realizing subnanosecond pulse laser output.
Further, the microchip optical parametric oscillator is composed of nonlinear crystals, including but not limited to KTP, KTA, mgO: LN, LBO, BBO, gaSe nonlinear crystals, wherein the thickness of the nonlinear crystals is 100-10 mm, one end of the nonlinear crystals, which is close to the microchip subnanosecond laser, is plated with a subnanosecond fundamental frequency laser band antireflection film and a parametric optical band high reflection film, the other end of the nonlinear crystals is plated with a subnanosecond fundamental frequency laser band antireflection film and a parametric optical band 50% -0.5% partial transmission film, two ends of the plating films form a resonant cavity of the microchip optical parametric oscillator, and the subnanosecond fundamental frequency laser with the thickness of 1064nm or 1030nm is subjected to nonlinear optical frequency conversion, so that subnanosecond parametric light is output.
Further, the parametric optical wave band output by the microchip optical parametric oscillator is 1.2-10 mu m, the parametric light comprises signal light and idler frequency light, and the microchip optical parametric oscillator is divided into a double-resonance microchip optical parametric oscillator or a single-resonance microchip optical parametric oscillator according to the oscillated parametric light.
Furthermore, the microchip optical parametric oscillator realizes phase mismatch compensation in the nonlinear optical frequency conversion process based on the cavity phase matching principle, and the extra phase change introduced by the reflection of the resonant cavity of the microchip optical parametric oscillator is utilized to compensate the phase mismatch caused by nonlinear crystal dispersion, and the double-resonance process satisfies the conditions:
The single resonance process satisfies the condition:
wherein, AndThe method is characterized in that the sum of additional phases introduced by the signal light and the idler frequency light when the signal light and the idler frequency light are reflected in the resonant cavity of the microchip optical parametric oscillator is respectively k s and k i are wave vectors of the signal light and the idler frequency light, L is the thickness of a nonlinear crystal in the microchip optical parametric oscillator, m is an integer, the signal light and the idler frequency light can still keep the same phase with the incident sub-nanosecond fundamental frequency laser after circulating for one circle in the resonant cavity of the microchip optical parametric oscillator, or the phase difference is 2 mpi, and the signal light and the idler frequency light can be continuously enhanced in a plurality of circulating oscillations in the duration of the sub-nanosecond fundamental frequency laser pulse.
The temperature control sheet comprises a heat sink, a thermistor and a resistance wire, wherein the heat sink is tightly adhered to the microchip optical parametric oscillator and is used for fixing the microchip optical parametric oscillator and providing heating temperature control for the microchip optical parametric oscillator, the heat sink is made of metal, ceramic or mineral with the heat conductivity higher than 50W/(m.K) and comprises but not limited to copper, aluminum and diamond, the center of the heat sink is provided with a light transmission hole, and the thermistor and the resistance wire are connected with the heat sink and are used for measuring the temperature and heating and can be controlled by an external circuit.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
1. The invention adopts a double microchip design, integrates a laser generating part and a nonlinear optical frequency conversion part in two microchip, forms a resonant cavity by directly coating a film on the crystal surface, remarkably improves the compactness and stability of the structure, saves space, simplifies the structure and improves the transmission efficiency of pumping light compared with the traditional complex beam coupling and optical fiber transmission system, has simple integral light source design and strong stability, is suitable for micro-optical-electromechanical systems and on-chip integrated systems, is insensitive to severe environments such as impact vibration and the like, and is suitable for extreme environments and various miniaturized and integrated application scenes such as laser radar, communication and detection.
2. The nonlinear optical frequency conversion is realized by adopting a microchip optical parametric oscillator to form an optical resonant cavity through the surface coating of a nonlinear crystal, so that the nonlinear optical frequency conversion of subnanosecond laser is realized, the limit of the traditional optical parametric oscillation technology on the laser pulse width and the repetition frequency is broken through, compared with the traditional optical parametric generation and amplification technology, the nonlinear optical frequency conversion has the advantages that the requirement on the nonlinear crystal is obviously reduced, the crystal is not required to have a particularly large effective nonlinear coefficient or an additional seed light source, the frequency conversion system is simplified, the feedback effect of the resonant cavity optimizes the beam quality of parametric light and obviously presses the narrow line width, and the high quality of output laser is ensured.
3. The tunable wavelength output is realized by forming a cavity phase matching structure on the crystal surface coating of the microchip optical parametric oscillator, so that the phase mismatch compensation in the frequency conversion process is realized, the wavelength of the output sub-nanosecond parameter is adjustable, and the temperature control chip is introduced to realize rapid and stable wavelength tuning only by temperature adjustment under the condition of keeping an optical path system unchanged, thereby simplifying the operation and improving the reliability and the practical application efficiency of the system.
4. The invention has wide applicability and economy, does not need a complex seed light source injection system or strict birefringence phase matching condition, reduces the manufacturing cost, is suitable for mass production, has high integration, portability and stability, has wide application prospect, and particularly provides a solution with high efficiency, easy integration and low cost for the development of next-generation lasers in the fields of laser radar, communication, photoelectric countermeasure, gas detection and the like.
Drawings
FIG. 1 shows a schematic diagram of a tunable sub-nanosecond laser source of a dual microchip structure provided by the present invention;
FIG. 2 shows a schematic diagram of a single-resonant microchip optical parametric oscillator;
FIG. 3 shows a graph of sub-nanosecond parametric light output center wavelength as a function of temperature;
The reference numerals comprise a 1-semiconductor laser, a 2-focusing lens, a 3-microchip subnanosecond laser, a 31-laser crystal, a 32-saturable absorber, a 4-microchip optical parametric oscillator and a 5-temperature control chip.
Detailed Description
The present invention will be further described in detail below with reference to specific embodiments and with reference to the accompanying drawings, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
As shown in fig. 1, a schematic structural diagram of a tunable sub-nanosecond laser source with a dual microchip structure is schematically shown, provided according to an embodiment of the present invention. The tunable subnanosecond laser generating device comprises a semiconductor laser 1, a focusing lens 2, a microchip subnanosecond laser 3, a microchip optical parametric oscillator 4 and a temperature control chip 5 which are sequentially arranged.
According to the embodiment of the invention, a semiconductor laser 1, a focusing lens 2, a micro-chip subnanosecond laser 3 and a micro-chip optical parametric oscillator 4 are coaxially arranged, the micro-chip optical parametric oscillator 4 is fixed on a temperature control chip 5, pumping light is generated by the semiconductor laser and is converged by the focusing lens and then is incident into the micro-chip subnanosecond laser to generate subnanosecond fundamental frequency laser, the pulse duration of the subnanosecond fundamental frequency laser is between hundred picoseconds and nanoseconds, the subnanosecond fundamental frequency laser pumps the micro-chip optical parametric oscillator to realize nonlinear optical frequency conversion of the subnanosecond laser, subnanosecond parametric light is output, the pulse duration of the subnanosecond parametric light is between hundred picoseconds and nanoseconds, the micro-chip optical parametric oscillator is composed of nonlinear crystals, a double-end coating film forms a resonant cavity of the micro-chip optical parametric oscillator, and based on the cavity phase matching principle, the phase mismatch caused by nonlinear crystal dispersion is compensated by the extra phase mismatch due to the reflection of the resonant cavity of the micro-chip optical parametric oscillator, and the temperature of the micro-chip optical parametric oscillator is precisely controlled by the temperature control chip to realize subnanosecond tuning.
Preferably, the semiconductor laser 1 is a laser diode, and the laser output is realized by an electric excitation mode, and the central wavelength of the emitted pump light is 808nm.
Preferably, the focusing lens 2 is a convex lens, and an antireflection film with a wave band of 800-810 nm is plated on the surface of the focusing lens and is used for focusing and incidence of pump light into a laser crystal of the microchip subnanosecond laser, and the focusing point is positioned at a position of 1mm in the surface of the laser crystal.
Preferably, the microchip subnanosecond laser 3 is thermally diffusion bonded by the laser crystal 31 and the saturable absorber 32. The two ends of the microchip subnanosecond laser 3 are coated to form a resonant cavity of the microchip subnanosecond laser, an 808nm antireflection film and a 1064nm high reflection film are coated on the end face close to the focusing lens, and an 808nm antireflection film and a 1064nm 50% partial transmission film are coated on the end face close to the microchip optical parametric oscillator.
The laser crystal 31 and the saturable absorber 32 are a Nd: YAG crystal and a Cr: YAG crystal, respectively, the Nd: YAG crystal size is 6mm×3mm, <100> cut, and the Nd 3+ doping concentration is 1.1-at.%. YAG crystal size was 2mm by 3mm, <110> cut and initial transmittance was 30%. The laser crystal 31 is adapted to absorb the focused pump light and to generate an oscillating laser light within the cavity of the microchip subnanosecond laser. The saturable absorber 32 is suitable for adjusting the loss of the resonant cavity of the microchip subnanosecond laser, and realizes subnanosecond pulse laser output.
The laser crystal Nd-YAG crystal of the micro-chip subnanosecond laser 3 absorbs focused pumping light, activated particles in the Nd-YAG crystal are transited from a ground state to an excited state, so that pumping light energy is stored in an upper energy level of laser, when the Q-switched crystal Cr-YAG crystal is not bleached and is in a closed state, the upper energy level particle number is continuously accumulated and a large number of inverted particle numbers are generated, when the Cr-YAG crystal is bleached, namely, a Q switch is opened, the gain in a resonant cavity of the micro-chip subnanosecond laser exceeds loss, the laser oscillation condition is met, intense stimulated radiation amplification is rapidly realized through feedback of the resonant cavity of the micro-chip subnanosecond laser, subnanosecond pulse laser oscillation is established in the resonant cavity, subnanosecond fundamental frequency laser pulses are output, and the pulse repetition frequency is consistent with the Q-switched frequency to be 1kHz.
Preferably, the microchip optical parametric oscillator 4 is formed by a nonlinear crystal KTP coating film, the KTP crystal is cut along the x direction, the KTP crystal size is 3mm (z) x 3mm (y) x 1mm (x), a 1064nm antireflection film (transmittance > 99%) and a 1500-160 nm wave band high reflection film (reflectance > 99.8%) are coated on one incident end, a 1064nm antireflection film (transmittance > 99%) and a 1500-160 nm wave band partial transmission film (transmittance=2%) are coated on one emergent end, and the two ends of the coating film form a resonant cavity of the microchip optical parametric oscillator.
Preferably, the temperature control sheet 5 comprises a heat sink, a thermistor and a resistance wire, wherein the heat sink is tightly adhered to the microchip optical parametric oscillator and is used for fixing the microchip optical parametric oscillator and providing good heating temperature control for the microchip optical parametric oscillator, the heat sink is made of metal copper, a 2mm diameter light passing hole is formed in the center of the heat sink, and the thermistor and the resistance wire are connected with the copper heat sink and are used for measuring temperature and heating and can be controlled by an external circuit.
As shown in fig. 2, a schematic diagram of the principle of a single-resonant microchip optical parametric oscillator is shown. The input end and the output end of the microchip optical parametric oscillator 4 are high in transmission of the sub-nanosecond fundamental frequency laser wave band, the signal light is transmitted at the high reflection and output end part of the incident end, resonated in the resonant cavity of the microchip optical parametric oscillator and partially output according to the proportion, and the single-resonant microchip optical parametric oscillator is formed. The subnanosecond fundamental frequency laser output by the microchip subnanosecond laser 3 is incident into the microchip optical parametric oscillator to generate a nonlinear parametric process, parametric light of the nonlinear parametric process originates from quantum noise, the subnanosecond fundamental frequency laser provides gain for the parametric light through a nonlinear crystal to realize frequency conversion of the subnanosecond fundamental frequency laser, the oscillating parametric light and the incident subnanosecond fundamental frequency laser meet the energy conservation condition, meanwhile, the resonant cavity of the microchip optical parametric oscillator has a selective effect on the oscillation frequency, the frequency meeting the cavity phase matching condition can be continuously gained to realize the subnanosecond parametric light output of specific wavelength, and the feedback effect of the resonant cavity of the microchip optical parametric oscillator 4 can realize optimization of the subnanosecond parametric light beam quality and line width narrowing. The y-axis direction of the nonlinear crystal in the microchip optical parametric oscillator is the same as the polarization direction of the subnanosecond fundamental frequency laser, the polarization direction of the incident subnanosecond fundamental frequency laser is along the y-axis direction of the nonlinear crystal, the polarization direction of the signal light is along the y-axis direction of the nonlinear crystal, and the polarization direction of the idler frequency light is along the z-axis direction of the nonlinear crystal, so that nonlinear optical frequency conversion of 1064nm subnanosecond fundamental frequency laser is realized, and subnanosecond parametric light is output.
Preferably, the microchip optical parametric oscillator 4 realizes phase mismatch compensation in the nonlinear optical frequency conversion process based on the cavity phase matching principle, and the phase mismatch caused by nonlinear medium dispersion is compensated by utilizing extra phase change introduced by the reflection of the resonant cavity of the microchip optical parametric oscillator, and the single resonance process meets the conditions:
wherein, The method is characterized in that the method is the sum of extra phases introduced by signal light when the signal light is reflected in a resonant cavity of the microchip optical parametric oscillator, k s is the wave vector of the signal light, L is the thickness of a nonlinear crystal in the microchip optical parametric oscillator, m is an integer, the signal light can keep the same phase with subnanosecond fundamental frequency laser after circulating for one circle in the cavity of the microchip optical parametric oscillator (the phase difference is 2m pi, m is an integer), and the signal light can be continuously enhanced in multiple circulating oscillations during the duration of subnanosecond fundamental frequency laser pulse.
As shown in fig. 3, the sub-nanosecond parametric light output center wavelength is shown as a function of temperature. The heat sink is tightly adhered to the microchip optical parametric oscillator, the temperature of the microchip optical parametric oscillator is precisely controlled through the temperature control chip, the optical length of the resonant cavity of the microchip optical parametric oscillator 4 is related to the thickness and refractive index parameters of the nonlinear crystal, the parameters are related to the temperature, the temperature is changed, the regulation and control of the optical length of the resonant cavity of the microchip optical parametric oscillator can be realized, and the tuning of the output wavelength of subnanosecond parametric light is realized.
What is not described in detail in the present invention belongs to the prior art known to those skilled in the art.
The foregoing embodiments have been provided for the purpose of illustrating the general principles of the present invention, and are not meant to limit the invention thereto, but to limit the invention thereto, any modification, equivalent replacement, improvement, etc. that comes within the spirit and principles of the present invention are to be included.
Claims (10)
1. A tunable subnanosecond laser source with a double-microchip structure is characterized by comprising a semiconductor laser (1), a focusing lens (2), a microchip subnanosecond laser (3), a microchip optical parametric oscillator (4) and a temperature control chip (5) which are sequentially arranged, wherein the semiconductor laser (1), the focusing lens (2), the microchip subnanosecond laser (3) and the microchip optical parametric oscillator (4) are coaxially arranged, the microchip optical parametric oscillator (4) is fixed on the temperature control chip (5), the semiconductor laser (1) generates pumping light, the pumping light is converged by the focusing lens (2) and then enters the microchip subnanosecond laser (3) to generate sub-fundamental frequency laser, the pulse duration of the sub-fundamental frequency laser is between hundred picoseconds and nanosecond, the sub-nanosecond optical parametric oscillator (4) is pumped to realize nonlinear optical frequency conversion of the sub-nanosecond laser, the pulse duration of the sub-nanosecond parametric oscillator is between hundred picoseconds, the phase oscillation cavity is formed by the phase-matched oscillation cavity of the microchip optical parametric oscillator (4) based on the principle that the phase-matched with the micro-oscillator (4) is additionally arranged, and the phase-matched with the phase-matched optical parametric oscillator (4) is formed by the micro-oscillator cavity, sub-nanosecond parametric optical wavelength tuning is achieved.
2. The tunable sub-nanosecond laser source with the double-microchip structure according to claim 1, wherein the semiconductor laser (1) is a laser diode, laser output is realized by an electric excitation mode, and the wavelength range of the emitted pumping light is 800-810 nm or 880-890 nm or 935-945 nm or 965-975 nm.
3. The tunable sub-nanosecond laser source with the double-microchip structure according to claim 1, wherein the focusing lens (2) is a convex lens, and a 800-810 nm or 880-890 nm or 935-945 nm or 965-975 nm wave band antireflection film is plated on the surface of the focusing lens.
4. The tunable sub-nanosecond laser source of the double microchip structure according to claim 1, characterized in that the microchip sub-nanosecond laser (3) comprises a laser crystal (31) and a saturable absorber (32), the laser crystal (31) and the saturable absorber (32) constituting the microchip sub-nanosecond laser (3) by thermal diffusion bonding.
5. The tunable subnanosecond laser source with the double microchip structure according to claim 1 or 4, wherein the microchip subnanosecond laser (3) is characterized in that a pumping light wave band antireflection film and a subnanosecond fundamental frequency laser wave band high reflection film are plated on the end face of a laser crystal (31) close to a focusing lens (2), a pumping light wave band antireflection film and a subnanosecond fundamental frequency laser wave band partial transmission film which is 10% -90% of the pumping light wave band antireflection film and the subnanosecond fundamental frequency laser wave band are plated on the end face of a saturable absorber (32) close to a microchip optical parametric oscillator (4), and the two ends of the plated film form a resonant cavity of the microchip subnanosecond laser (3).
6. The tunable subnanosecond laser source with the double microchip structure according to claim 1, 4 or 5, wherein the laser crystal (31) is a YAG laser crystal doped with Nd 3+ or Yb 3+, specifically Nd: YAG or Yb: YAG, which is suitable for absorbing the pump light and generating the oscillation laser in the resonant cavity of the microchip subnanosecond laser, and outputs the subnanosecond fundamental frequency laser with the wavelength of 1064nm or 1030nm, and the saturable absorber (32) is a Q-switched crystal doped with Cr 4+, specifically Cr: YAG, which is suitable for adjusting the loss of the resonant cavity of the microchip subnanosecond laser and realizing the subnanosecond pulse laser output.
7. The tunable subnanosecond laser source with the double-microchip structure according to claim 1, wherein the microchip optical parametric oscillator (4) is composed of nonlinear crystals, including but not limited to KTP, KTA, mgO: LN, LBO, BBO, gaSe nonlinear crystals, the thickness of the nonlinear crystals is 100-10 mm, a subnanosecond fundamental frequency laser band antireflection film and a subnanosecond optical band high reflection film are plated at one end, close to the microchip subnanosecond laser (3), of the microchip, a subnanosecond fundamental frequency laser band antireflection film and a subnanosecond optical band 50% -0.5% part of a transmission film are plated at the other end, two ends of the plating film form a resonant cavity of the microchip optical parametric oscillator (4), and the subnanosecond parametric light is output by carrying out nonlinear optical frequency conversion on 1064nm or 1030nm subnanosecond laser.
8. The tunable sub-nanosecond laser source with the double microchip structure according to claim 1 or 7, wherein the parametric optical band output by the microchip optical parametric oscillator (4) is 1.2-10 μm, the parametric light comprises signal light and idler frequency light, and the microchip optical parametric oscillator (4) is divided into a double-resonance microchip optical parametric oscillator or a single-resonance microchip optical parametric oscillator according to the oscillated parametric light.
9. The tunable sub-nanosecond laser source with the double microchip structure according to claim 1, 7 or 8, wherein the microchip optical parametric oscillator (4) realizes phase mismatch compensation in the nonlinear optical frequency conversion process based on a cavity phase matching principle, and the extra phase change introduced by the reflection of the resonant cavity of the microchip optical parametric oscillator is utilized to compensate phase mismatch caused by nonlinear crystal dispersion, and the double resonance process satisfies the conditions:
The single resonance process satisfies the condition:
wherein, AndThe method is characterized in that the sum of additional phases introduced by the signal light and the idler frequency light when the signal light and the idler frequency light are reflected in the resonant cavity of the microchip optical parametric oscillator is respectively k s and k i are wave vectors of the signal light and the idler frequency light, L is the thickness of a nonlinear crystal in the microchip optical parametric oscillator (4), m is an integer, the signal light and the idler frequency light can still keep the same phase with the incident sub-nanosecond fundamental frequency laser after circulating for one circle in the resonant cavity of the microchip optical parametric oscillator, or the phase difference is 2m pi, and the signal light and the idler frequency light can be continuously enhanced in a plurality of circulating oscillations within the duration of the sub-nanosecond fundamental frequency laser pulse.
10. The tunable sub-nanosecond laser source with the double microchip structure according to claim 1, wherein the temperature control chip comprises a heat sink, a thermistor and a resistance wire, the heat sink is tightly adhered to the microchip optical parametric oscillator (4) and used for fixing the microchip optical parametric oscillator (4) and providing heating temperature control for the microchip optical parametric oscillator, the heat sink material is metal, ceramic or mineral with the heat conductivity higher than 50W/(m.K), including but not limited to copper, aluminum and diamond, the center of the heat sink is provided with a light through hole, and the thermistor and the resistance wire are connected with the heat sink and used for measuring temperature and heating and can be controlled by an external circuit.
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