CN119362155B - A gallium-free antimonide semiconductor infrared laser - Google Patents
A gallium-free antimonide semiconductor infrared laser Download PDFInfo
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- CN119362155B CN119362155B CN202411478568.4A CN202411478568A CN119362155B CN 119362155 B CN119362155 B CN 119362155B CN 202411478568 A CN202411478568 A CN 202411478568A CN 119362155 B CN119362155 B CN 119362155B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 239000010410 layer Substances 0.000 claims abstract description 101
- 238000005253 cladding Methods 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 229910005542 GaSb Inorganic materials 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 20
- 230000004888 barrier function Effects 0.000 claims abstract description 13
- 239000011241 protective layer Substances 0.000 claims abstract description 12
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 11
- 229910000673 Indium arsenide Inorganic materials 0.000 claims abstract description 9
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 230000007704 transition Effects 0.000 claims description 34
- 239000002346 layers by function Substances 0.000 claims description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- 229910052787 antimony Inorganic materials 0.000 abstract description 2
- 229910052785 arsenic Inorganic materials 0.000 abstract description 2
- 229910052738 indium Inorganic materials 0.000 abstract description 2
- 240000002329 Inga feuillei Species 0.000 abstract 1
- 229910021478 group 5 element Inorganic materials 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
本发明提供了一种不含镓的锑化物半导体红外激光器，属于半导体激光器技术领域；经典的InGa(As)Sb‑AlGaAsSb I型应变量子阱包含In、Ga、Al三种III族元素和As、Sb两种V族元素。该结构的价带带阶偏小，对空穴的束缚能力不强，这限制了激光器的增益和向长波长拓展的能力；包括GaSb衬底，以及在GaSb衬底上依次外延生长的下包层、下波导层、有源区、上波导层、上包层和保护层，所述下包层、上包层采用AlAsy3Sb1‑y3材料，其中0.02≤y3≤0.22，所述下波导层、上波导层和有源区的量子势垒采用与GaSb衬底匹配的Inx2Al1‑x2Asy2Sb1‑y2材料，其中0.4≤x2≤0.6，所述有源区的量子阱采用InAsy1Sb1‑y1材料，其中0.50≤y1≤0.85；本发明应用于锑化物半导体红外激光器。
The invention provides a gallium-free antimonide semiconductor infrared laser, belonging to the technical field of semiconductor lasers; the classic InGa(As)Sb‑AlGaAsSb I-type strained quantum well contains three group III elements, In, Ga and Al, and two group V elements, As and Sb. The valence band order of the structure is relatively small, and the binding ability for holes is not strong, which limits the gain of the laser and the ability to expand to long wavelengths; it includes a GaSb substrate, and a lower cladding layer, a lower waveguide layer, an active area, an upper waveguide layer, an upper cladding layer and a protective layer epitaxially grown in sequence on the GaSb substrate, the lower cladding layer and the upper cladding layer are made of AlAs y3 Sb 1‑y3 material, wherein 0.02≤y3≤0.22, the quantum barriers of the lower waveguide layer, the upper waveguide layer and the active area are made of In x2 Al 1‑x2 As y2 Sb 1‑y2 material matching the GaSb substrate, wherein 0.4≤x2≤0.6, and the quantum well of the active area is made of InAs y1 Sb 1‑y1 material, wherein 0.50≤y1≤0.85; the present invention is applied to antimonide semiconductor infrared lasers.
Description
Technical Field
The invention provides an antimonide semiconductor infrared laser without gallium, and belongs to the technical field of antimonide semiconductor lasers.
Background
Antimonide semiconductor laser has great application potential in the fields of medical treatment, satellite remote sensing, laser radar, gas detection, free space communication and the like. The core of which is antimonide semiconductor material. The material has a forbidden bandwidth with proper size, and the band gap can be regulated and controlled through smart energy band engineering, so that the material is an ideal material system for covering the mid-infrared band. Currently, classical InGaIng (As) Sb-AlGaAsSb type I strained quantum wells exhibit certain advantages for the 2-3um band. The light-emitting diode is epitaxially grown on a GaSb commercial substrate, and is characterized in that InGaSb (As) Sb is used As a quantum well, alGaAsSb with low Al component is used As a quantum barrier and a waveguide layer, and AlGaAsSb with high Al component is used As a limiting layer, so that double constraint of light and electricity is realized to ensure laser irradiation with higher quality.
Classical InGaIn (As) Sb-AlGaAsSb I type strain quantum wells contain three III group elements of In, ga and Al and two V group elements of As and Sb. The valence band of the structure is smaller in order, and the binding capacity to holes is not strong, so that the gain and the capacity of expanding to long wavelengths of the laser are limited. And the Ga element may introduce certain defects into the material. Furthermore, there is still room for improvement in the confinement of the light field.
Disclosure of Invention
The invention provides an antimonide semiconductor infrared laser without gallium in order to solve the problems existing in the prior art. The functional layer does not contain gallium, the band order is larger, the binding capacity to holes is stronger, and the gain and the capability of expanding to long wavelength of the laser are improved.
In order to solve the technical problems, the gallium-free antimonide semiconductor infrared laser comprises a GaSb substrate, and a lower cladding layer, a lower waveguide layer, an active region, an upper waveguide layer, an upper cladding layer and a protective layer which are sequentially epitaxially grown on the GaSb substrate, wherein the lower cladding layer and the upper cladding layer are made of AlAs y3Sb1-y3 materials, y3 is more than or equal to 0.02 and less than or equal to 0.22, quantum barriers of the lower waveguide layer, the upper waveguide layer and the active region are made of In x2Al1- x2Asy2Sb1-y2 materials matched with the GaSb substrate, x2 is more than or equal to 0.4 and less than or equal to 0.6, and quantum wells of the active region are made of InAs y1Sb1-y1 materials, wherein y1 is more than or equal to 0.50 and less than or equal to 0.85.
A transition layer A is further arranged between the GaSb substrate and the lower cladding layer, a transition layer B is further arranged between the lower cladding layer and the lower waveguide layer, a transition layer C is further arranged between the upper waveguide layer and the upper cladding layer, and a transition layer D is further arranged between the upper cladding layer and the protective layer.
And a buffer layer is arranged between the GaSb substrate and the transition layer A.
The conductivity type of the GaSb substrate is N type, the carrier concentration is 2E17-2E18cm -3, and the thickness is 450-550um.
The buffer layer is made of GaSb, the conductivity type is N type, the carrier concentration is 2E17-2E18cm -3, and the thickness is 400-500nm;
The material of the protective layer is GaSb, the conductivity type is P type, the carrier concentration is 6E18-2E19cm -3, and the thickness is 100-300nm.
The transition layer A is used for realizing gradual transition of components between the buffer layer and the lower cladding, the conductivity type is N type, the carrier concentration is 4E17-2E18cm -3, and the thickness is 20-40nm.
The transition layer B is used for realizing gradual transition of components between the lower cladding layer and the lower waveguide layer, and the thickness is 40-60nm.
The transition layer C is used for realizing gradual transition of components between the upper cladding layer and the upper waveguide layer, and the thickness is 40-60nm.
The transition layer D is used for realizing gradual transition of components between the upper cladding layer and the protective layer, the conductivity type is P type, the carrier concentration is 6E18-2E19cm -3, and the thickness is 40-60nm.
The active region consists of strained InAs y1Sb1-y1 and In x2Al1-x2Asy2Sb1-y2 which are lattice matched with the substrate, each quantum well is clamped by two quantum barriers, the thickness of the quantum well is 6-15nm, the number of the quantum wells is 1-5, and the thickness of the quantum barriers is 15-40nm.
Compared with the prior art, the novel laser has the advantages that compared with a classical structure, the novel laser has larger band order, has stronger binding effect on carriers, and is beneficial to improving gain. And the refractive index of the cladding layer (namely the limiting layer) is smaller, so that the confining effect of the cladding layer on the light field is stronger. The thermal conductivity is larger, and the development of a high-power laser is facilitated.
Drawings
The invention is further described below with reference to the accompanying drawings:
FIG. 1is a schematic diagram of a laser according to the present invention;
fig. 2 is a schematic diagram of parameters of a laser according to the present invention, wherein (a) is a schematic diagram of a flat band of the laser, (b) is a schematic diagram of refractive index of the laser, and (c) is a schematic diagram of thermal conductivity of the laser.
Detailed Description
As shown In figures 1 and 2, the invention provides a gallium-free antimonide semiconductor infrared laser, which takes InAs y1Sb1-y1 subjected to compressive stress as a quantum well of an active region, wherein 0.50.ltoreq.y1.ltoreq.0.85 to generate different degrees of compressive stress, takes In x2Al1-x2Asy2Sb1-y2 matched with a substrate as a quantum barrier and a waveguide layer, wherein 0.4.ltoreq.x2.ltoreq.0.6, and changes y2 along with the change of x2 to ensure that In x2Al1-x2Asy2Sb1-y2 and GaSb have no lattice mismatch or micro mismatch, wherein the lattice matching condition is that y2= (0.344 x 2+0.040)/(0.473 0.052 x 2), and takes AlAs y3Sb1-y3 subjected to weak tension as a cladding layer, wherein 0.02.ltoreq.y3.ltoreq.0.22.
The laser of the present invention will be described in detail with reference to specific examples.
Example 1
The specific structure is as follows:
The semiconductor device comprises a substrate from bottom to top, a lower cladding layer, a lower waveguide layer, an active region, an upper waveguide layer, an upper cladding layer and a protective layer, wherein a GaSb substrate is adopted, the conductivity type is N type, the lower cladding layer is InAs 0.2Sb0.8, the conductivity type is N type, the lower waveguide layer is In 0.5Al0.5As0.474Sb0.526, the active region consists of strained InAs 0.75Sb0.25 (quantum well) and In 0.5Al0.5As0.474Sb0.526 (quantum barrier) which is lattice matched with the substrate, the upper waveguide layer is In 0.5Al0.5As0.474Sb0.526 and is lattice matched with the substrate, the upper cladding layer is AlAs 0.2Sb0.8, the conductivity type is P type, and the protective layer is GaSb material and the conductivity type is P type.
Example 2
On the basis of the embodiment 1, components or doping gradient layers are added between the functional layers, and the specific structure is as follows:
(1) GaSb is used as a substrate, the conductivity type is N type, and the carrier concentration is 2E17-2E18cm -3;
(2) The buffer layer is made of GaSb, has an N-type conductivity, has a carrier concentration of 2E17-2E18cm -3 and a thickness of 450-550um;
(3) The lower cladding is made of AlAs 0.2Sb0.8, has an N-type conductivity, has a carrier concentration of 5E17-2E18cm -3 and has a thickness of 1500-3000nm;
(4) The transition layer A realizes gradual transition of components between the buffer layer and the lower cladding, the conductivity type is N type, the carrier concentration is 4E17-2E18cm -3, and the thickness is 20-40nm;
(5) The lower waveguide layer is made of In 0.5Al0.5As0.474Sb0.526, and is In lattice matching with the substrate, and the thickness is 200-400nm;
(6) The transition layer B realizes the gradual transition of the components between the lower cladding layer and the lower waveguide layer, and has the thickness of 40-60nm;
(7) The active region consists of strained InAs 0.75Sb0.25 (quantum well) and In 0.5Al0.5As0.474Sb0.526 (quantum barrier) lattice matched to the substrate. Each quantum well is sandwiched by two quantum barriers. The thickness of the quantum well is 6-15nm, and the number of the quantum wells is 1-5. The quantum barrier thickness is 15-40nm.
(8) An upper waveguide layer made of In 0.5Al0.5As0.474Sb0.526 and having a thickness of 200-400nm and lattice-matched with the substrate;
(9) The upper cladding is made of AlAs 0.2Sb0.8, has a conductivity type of P type, has a carrier concentration of 8E17-1E19cm -3 and a thickness of 1500-3000nm;
(10) The transition layer C realizes the gradual transition of the components between the upper cladding layer and the upper waveguide layer, and the thickness is 40-60nm;
(11) The protective layer is made of GaSb, has a conductivity type of P type, has a carrier concentration of 6E18-2E19cm -3 and a thickness of 100-300nm;
(12) And the transition layer D realizes gradual transition of components between the upper cladding layer and the protective layer, the conductivity type is P type, the carrier concentration is 6E18-2E19cm -3, and the thickness is 40-60nm.
The invention can effectively solve the problems of defects brought by Ga element to the material and smaller band-gap of the valence band of the material, thereby improving the performance of the laser.
It should be noted that the above embodiments are merely for illustrating the technical solution of the present invention and not for limiting the same, and although the present invention has been described in detail with reference to the above embodiments, it should be understood by those skilled in the art that the technical solution described in the above embodiments may be modified or some or all of the technical features may be equivalently replaced, and these modifications or substitutions do not make the essence of the corresponding technical solution deviate from the scope of the technical solution of the embodiments of the present invention.
Claims (10)
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| CN202411478568.4A CN119362155B (en) | 2024-10-22 | 2024-10-22 | A gallium-free antimonide semiconductor infrared laser |
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| CN119362155B true CN119362155B (en) | 2025-04-18 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103078252A (en) * | 2013-01-25 | 2013-05-01 | 中国科学院半导体研究所 | Dual-wavelength antimonide strained quantum well semiconductor laser and preparation method thereof |
| CN111431033A (en) * | 2020-04-10 | 2020-07-17 | 中国科学院半导体研究所 | A kind of mid-infrared antimonide quantum cascade laser and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7280576B2 (en) * | 2001-09-11 | 2007-10-09 | Qinetiq Limited | Type II mid-infrared quantum well laser |
| US6813297B2 (en) * | 2002-07-16 | 2004-11-02 | Agilent Technologies, Inc. | Material systems for long wavelength lasers grown on GaSb or InAs substrates |
| US7266279B1 (en) * | 2005-03-25 | 2007-09-04 | Hrl Laboratories, Llc | Optically pumped stepped multi-well laser |
| US7656912B2 (en) * | 2007-03-27 | 2010-02-02 | Stc.Unm | Tunable infrared lasers for gas-phase spectroscopy |
| CN114566870A (en) * | 2022-03-01 | 2022-05-31 | 浙大城市学院 | High-gain interband cascade laser and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103078252A (en) * | 2013-01-25 | 2013-05-01 | 中国科学院半导体研究所 | Dual-wavelength antimonide strained quantum well semiconductor laser and preparation method thereof |
| CN111431033A (en) * | 2020-04-10 | 2020-07-17 | 中国科学院半导体研究所 | A kind of mid-infrared antimonide quantum cascade laser and preparation method thereof |
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