CN119315858B - A DC bus multiplication nanosecond pulse power supply and control method - Google Patents
A DC bus multiplication nanosecond pulse power supply and control method Download PDFInfo
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M11/00—Power conversion systems not covered by the preceding groups
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/01—Resonant DC/DC converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/22—Conversion of DC power input into DC power output with intermediate conversion into AC
- H02M3/24—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters
- H02M3/28—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC
- H02M3/325—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33573—Full-bridge at primary side of an isolation transformer
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/02—Conversion of AC power input into DC power output without possibility of reversal
- H02M7/04—Conversion of AC power input into DC power output without possibility of reversal by static converters
- H02M7/12—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/145—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
- H02M7/155—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
- H02M7/162—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only in a bridge configuration
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
- H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
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- Dc-Dc Converters (AREA)
Abstract
一种直流母线倍增纳秒级脉冲电源及控制方法，包括可调双隔离输出直流电源、脉冲发生电路、集成磁芯复位的脉冲升压变压器、集成磁芯复位的脉冲上升沿控制电路和集成磁芯复位的脉冲宽度与下降沿控制电路。可调双隔离输出直流电源用于提高脉冲电压直流电压，以匹配半导体功率模电压等级。脉冲发生电路采用直流母线级联倍增方案，实现脉冲电压直流电压倍增，突破了半导体功率模块自身电压等级的限制，提高了纳秒级脉冲高压电源的输出电压，降低了脉冲变压器与磁开关的线圈匝数，提高了磁芯的B‑H曲线的工作区间，实现了脉冲电压直流电压的精确控制，降低了设备的成本，提高了设备的可靠性和应用价值。
A DC bus multiplication nanosecond pulse power supply and control method, including an adjustable dual-isolated output DC power supply, a pulse generating circuit, a pulse boosting transformer with integrated core reset, a pulse rising edge control circuit with integrated core reset, and a pulse width and falling edge control circuit with integrated core reset. The adjustable dual-isolated output DC power supply is used to increase the pulse voltage DC voltage to match the voltage level of the semiconductor power module. The pulse generating circuit adopts a DC bus cascade multiplication scheme to achieve pulse voltage DC voltage multiplication, breaking through the limitation of the voltage level of the semiconductor power module itself, increasing the output voltage of the nanosecond pulse high-voltage power supply, reducing the number of coil turns of the pulse transformer and the magnetic switch, increasing the working range of the B-H curve of the magnetic core, achieving precise control of the pulse voltage DC voltage, reducing the cost of the equipment, and improving the reliability and application value of the equipment.
Description
Technical Field
The invention relates to conversion from direct current or alternating current input power to surge output power and control or regulation thereof, in particular to a direct current bus multiplication nanosecond pulse power supply and a control method.
Background
A nanosecond pulse high-voltage power supply, which belongs to special high-voltage power supply equipment. The nanosecond pulse high voltage can be used for generating high voltage pulse discharge, and has wide application prospects in the fields of air pollution control, water pollution control, material surface treatment, semiconductor material processing and the like. Nanosecond pulsed high-voltage discharge has various significant advantages. The time scale is short, the time scale of nanosecond pulse discharge is very short, and the processing time of each pulse is less than 1 microsecond. This high speed processing approach provides significant advantages for nanosecond pulsed discharges where fast response and efficient processing are required. The energy is quickly released, the nanosecond high-voltage pulse can release extremely high energy in extremely short time (nanosecond level), an electric field and plasma with high energy density are formed, and the voltage waveform of nanosecond pulse discharge has steep rising edges and falling edges, so that the discharge process is more rapid and efficient.
In nanosecond-level pulse high-voltage power supplies, a pulse generation circuit is usually driven and controlled by a semiconductor power module. With the development of semiconductor power module technology, the working voltage and current of the semiconductor power modules such as insulated gate bipolar transistor IGBT, silicon carbide metal oxide semiconductor field effect transistor silicon MOSFET, integrated gate commutated thyristor IGCT and the like are remarkably improved. Common voltage levels for semiconductor power modules are 650V, 1200V, 1700V, 3300V, 4500V, 6500V, etc. The nanosecond-level pulse high-voltage power supply is generally powered by three-phase power frequency mains voltage, and the rectified direct-current bus voltage is generally only 500-600V and is not matched with the voltage class of the semiconductor power module. The direct current bus voltage is improved and regulated, matching with various grades of semiconductor power modules can be achieved, and the performance of the nanosecond pulse high-voltage power supply is improved.
In the field of nanosecond pulse high-voltage power supplies, the prior technical scheme comprises the following steps:
Chinese patent No. CN116707319A discloses a pulse power supply for inhibiting bus voltage fluctuation and a control method thereof. The dual-active full-bridge converter is connected to the direct-current bus through an LC circuit, the primary side sampling module and the secondary side sampling module are respectively connected to the dual-active full-bridge converter and the control unit, the control unit is connected to the pulse generating module, the pulse generating module outputs a control signal to control a switching tube of the dual-active full-bridge converter, the pulse power identification module of the control unit is connected to the delay module through the pulse power adjusting module, and the pulse power identification module is also connected to the delay module through the estimation prediction module. The pulse power adjusting module comprises a power change calculating module and a phase shift ratio calculating module, and the estimation prediction module comprises an adaptive step size generating module, a capacitance voltage prediction module and a cost function evaluation module. The invention can effectively restrain the oscillation of the DC bus voltage, simultaneously respond to the change of the pulse power load rapidly, and ensure the high quality of the output terminal voltage.
The invention discloses a frequency division analog resistance control method of a grid-connected voltage type rectifier under an unbalanced power grid of Chinese patent CN117254704A, which comprises the steps of firstly, obtaining a power grid current signal and a direct current bus voltage signal under a two-phase static coordinate system. And secondly, according to the idea of frequency division control, respectively extracting a direct current component and a frequency doubling component of the direct current bus voltage based on a notch filter and a band-pass filter. Then, the direct-current voltage control ring is designed to regulate and control the direct-current component of the direct-current bus voltage, and the pulsating voltage control ring is designed to inhibit the frequency doubling component of the direct-current bus voltage caused by the unbalanced power grid. And finally, based on the idea of analog resistance control, calculating by utilizing the output of the two voltage controllers and the sampled power grid current signal, filtering by a band-pass filter to obtain a voltage reference at the alternating current side of the rectifier, and generating a pulse signal for controlling the switching tube of the rectifier to be conducted according to a carrier modulation method. The method is completely realized under a static coordinate system, and accurate line parameters, a power grid voltage sensor and a complex phase-locked loop algorithm are not needed.
The performance of the nanosecond pulse high-voltage power supply is also influenced by the magnetic cores of the pulse power supply and the magnetic switch, and the improvement of the magnetic cores is beneficial to improving the performance of the nanosecond pulse high-voltage power supply.
Meanwhile, in pollution control application, most pollutants have strong corrosiveness, and a reactor matched with a nanosecond power supply is usually manufactured by processing high-performance stainless steel, and some reactors even need duplex stainless steel. The reactor is therefore costly and limits its use. By improving the performance of the nanosecond pulse high-voltage power supply, the output voltage of the pulse power supply is improved, the improvement of the discharge distance of the reactor is facilitated, the cost of the reactor is reduced, and the application value is improved.
If a voltage class semiconductor power module is selected, namely the highest working DC bus voltage is determined, in order to promote the output of a pulse high-voltage power supply and reduce the cost of the reactor, a typical method can promote the transformation ratio N of a pulse transformer, but the equivalent capacitance value of the reactor is changed by a method for promoting the transformation ratio of the pulse transformer, and the equivalent capacitance value of the reactor after conversion is the square of the transformation ratio. The capacitance value of N 2 C is large due to the fact that the transformation ratio of the high-pulse transformer is improved, leakage inductance of the high-pulse transformer is increased due to the fact that the rising edge and the pulse width of the pulse are affected, power supply characteristics are changed, and environmental protection application treatment effect is poor. Therefore, a technician researching nanosecond pulse high-voltage power supply hopes to break through the voltage class of the semiconductor power module, further improves the highest working DC bus voltage, and improves the performance of the nanosecond pulse high-voltage power supply.
Disclosure of Invention
In view of the problems in the background art, the invention provides a technical solution of a direct current bus multiplication nanosecond pulse power supply and a control method, and the technical solution is as follows:
A DC bus multiplication nanosecond pulse power supply comprises a three-phase rectifying filter of an integrated buffer circuit, an adjustable double-isolation output DC power supply, a double-pulse generating circuit, a pulse boosting transformer for integrated magnetic core reset, a pulse energy storage circuit, a pulse rising edge control circuit for integrated magnetic core reset and a pulse width and falling edge control circuit for integrated magnetic core reset, and is characterized in that the adjustable double-isolation output DC power supply controls and improves the matching property of pulse DC voltage and semiconductor power mode voltage level, the DC bus cascade multiplication of the double-pulse generating circuit multiplies the pulse DC voltage, the pulse boosting transformer for integrated magnetic core reset, the pulse rising edge control circuit for integrated magnetic core reset and the pulse width and falling edge control circuit for integrated magnetic core reset improve the working interval of a B-H curve of the magnetic core,
The working currents of the two groups of filter capacitors of the double pulse generating circuit and the working currents of the two semiconductor power modules are controlled, so that the requirement of continuous operation allowable maximum average current value and the requirement of continuous operation allowable maximum pulse current value are simultaneously met, and two formulas of control operation are simultaneously established:
Wherein I VA is the maximum average current value allowed by continuous operation of the semiconductor power module of the double pulse generating circuit, I VP is the maximum pulse current value allowed by continuous operation of the semiconductor power module of the double pulse generating circuit, I CA is the maximum average current value allowed by continuous operation of two groups of filter capacitors, I CP is the maximum current value allowed by continuous operation of two groups of filter capacitors, U DCa、UDCb is two rated voltage values of an adjustable double-isolation output direct current power supply, C P1 is the capacitance value of a secondary connection energy storage capacitor of a pulse boosting transformer, N is the transformation ratio of the pulse boosting transformer, L S is the leakage inductance of the pulse boosting transformer, C P1 is the capacitance value of the secondary connection energy storage capacitor of the pulse boosting transformer, U P1 is the highest peak voltage on the secondary connection energy storage capacitor of the pulse boosting transformer, Is the maximum repetition frequency of the double pulse generating circuit;
the adjustable double-isolation output direct current power supply improves the direct current voltage of the three-phase power frequency power grid after rectification, the double-pulse generating circuit provides two paths of direct current power supplies with adjustable isolation and independent output, the transformation ratio of the double-output high-frequency isolation transformer is matched with the voltage level of a semiconductor power module in the double-pulse generating circuit, and the double-pulse generating circuit is used for cascading in the working process of the double-pulse generating circuit to multiply a direct current bus of the pulse power supply.
Further, the regulation control of the total output power P DC of the adjustable double-isolation output direct-current power supply accords with the following formula:
P DC is the total output power of the adjustable double-isolation output DC power supply, C P1 is the capacitance value of the secondary connection energy storage capacitor of the pulse step-up transformer, U P1 is the highest peak voltage on the secondary connection energy storage capacitor of the pulse step-up transformer, Is the maximum repetition frequency of the double pulse generating circuit.
Further, as a preferred scheme of the invention, the reset circuit of the pulse boosting transformer for resetting the integrated magnetic core is provided with an isolation transformer which is isolated from a power grid, so that the anti-interference capability can be improved, the higher the pulse repetition frequency is, the higher the reset voltage is, and the reset voltage U1 reset for adjusting and controlling the magnetic core of the pulse boosting transformer meets the following formula:
U1reset is reset voltage of the pulse booster transformer magnetic core, N1 is number of turns of the pulse booster transformer reset coil, delta B1 is magnetic density-Bm- +Bm difference value of the pulse booster transformer magnetic core, S1 is magnetic core section of the pulse booster transformer, and Ts is cycle time corresponding to maximum repetition frequency of the double pulse generating circuit.
The working currents of the two groups of filter capacitors of the control double-pulse generating circuit and the working currents of the two semiconductor power modules are optimized into two formulas for controlling operation in order to facilitate automatic control program operation:
Wherein I VA is the maximum average current value allowed by continuous operation of the semiconductor power module of the double pulse generating circuit, I VP is the maximum pulse current value allowed by continuous operation of the semiconductor power module of the double pulse generating circuit, I CA is the maximum average current value allowed by continuous operation of two groups of filter capacitors, I CP is the maximum current value allowed by continuous operation of two groups of filter capacitors, U DCa、UDCb is two rated voltage values of an adjustable double-isolation output direct current power supply, C P1 is the capacitance value of a secondary connection energy storage capacitor of a pulse boosting transformer, N is the transformation ratio of the pulse boosting transformer, L S is the leakage inductance of the pulse boosting transformer, C P1 is the capacitance value of the secondary connection energy storage capacitor of the pulse boosting transformer, U P1 is the highest peak voltage on the secondary connection energy storage capacitor of the pulse boosting transformer, Is the maximum repetition frequency of the double pulse generating circuit.
Further, as a preferred scheme of the invention, the equivalent series resistance ESR of the filter capacitor in the direct current bus multiplication nanosecond pulse power supply circuit is smaller than 60 mu omega, and the resistance specification of the equivalent series resistance is calculated by adopting the following formula:
ESR=tanδ/(2π×f×C)
wherein tan delta represents loss tangent, f is pulse operating frequency, and C is capacitor capacitance.
The pulse boosting transformer for the integrated magnetic core reset, the pulse rising edge control circuit for the integrated magnetic core reset and the pulse width and falling edge control circuit for the integrated magnetic core reset are used for improving the working interval of the magnetic core in the B-H curve.
The filter capacitor of the adjustable double-isolation output direct current power supply has the functions that a, the function is direct current filtering of high-frequency rectification, b, the function is voltage equalizing of two loops of a double-pulse generating circuit, C, the function is energy storage capacitor of a pulse generator, d, a pulse step-up transformer and recovery of resonance residual energy of the pulse energy storage circuit, the capacity values of two groups of filter capacitors C DCa、CDCb of the adjustable double-isolation output direct current power supply are equal, the capacity value error is less than +/-1%, and the capacity value is less than +/-1%Wherein C P1 is the capacitance value of the secondary connection energy storage capacitor of the pulse step-up transformer, and N is the transformation ratio N of the pulse step-up transformer.
The adjustable double-isolation output direct current power supply is provided with a direct current power supply by a three-phase rectifying filter of an integrated buffer circuit, and comprises an H-bridge inverter formed by V11, V12, V13 and V14 semiconductor power modules, a resonant capacitor C11, a resonant inductor L11, a double-output high-frequency isolation transformer TR1, two independent high-frequency rectifying bridges ZD1 and ZD2 and filter capacitors C21 and C22, and the input PWM drive of the H-bridge inverter formed by the V11, V12, V13 and V14 semiconductor power modules is changed, so that the PWM drive can control the output voltage of the direct current power supply.
Compared with the prior art, the invention has the beneficial technical effects
1. The DC bus multiplication nanosecond pulse power supply and the control method thereof improve the pulse DC voltage through an adjustable double-isolation output DC power supply, realize the matching with the voltage level of a semiconductor power module, realize the pulse voltage DC voltage multiplication through a DC bus cascade multiplication scheme of a double-pulse generating circuit, break through the voltage level of the semiconductor power module, realize the voltage level doubling application, greatly improve the output voltage of the pulse high-voltage power supply under the condition of not improving the transformation ratio of a pulse step-up transformer, improve the performance of the nanosecond pulse high-voltage power supply, realize the high multiplication of the pulse voltage DC voltage and break through the limit of the traditional technology.
2. A DC bus multiplication nanosecond pulse power supply and a control method thereof are characterized in that a pulse boosting transformer for integrated magnetic core reset, a pulse rising edge control circuit for integrated magnetic core reset and a pulse width and falling edge control circuit for integrated magnetic core reset are adopted, the working interval of a B-H curve of a magnetic core is improved, the number of turns of coils of the pulse boosting transformer and a magnetic switch is reduced, the performance of a nanosecond pulse high-voltage power supply is improved, and the cost of the nanosecond pulse high-voltage power supply is reduced.
3. The direct current bus multiplication nanosecond pulse power supply and the control method thereof improve the output voltage of the nanosecond pulse high-voltage power supply by improving the performance of the nanosecond pulse high-voltage power supply, enlarge the discharge distance of the reactor, reduce the cost of the reactor, improve the application value of the nanosecond pulse high-voltage power supply and enlarge the application range of equipment.
4. A pulse boosting transformer for resetting an integrated magnetic core, a pulse rising edge control circuit for resetting the integrated magnetic core and a pulse width and falling edge control circuit for resetting the integrated magnetic core are adopted, so that the number of turns of coils of the pulse boosting transformer and a magnetic switch is reduced, the volume and weight of equipment are reduced, the cost of the equipment is reduced, and the cost performance of the equipment is improved.
5. A DC bus multiplication nanosecond pulse power supply and a control method thereof are provided, wherein the working interval of a B-H curve of a magnetic core is improved, and the efficiency and the stability of equipment are improved through a pulse boosting transformer for integrated magnetic core reset, a pulse rising edge control circuit for integrated magnetic core reset and a pulse width and falling edge control circuit for integrated magnetic core reset.
6. A DC bus multiplication nanosecond pulse power supply and a control method thereof realize the accurate control of pulse voltage DC voltage and improve the precision and reliability of equipment by an adjustable double-isolation output DC power supply and a DC bus cascade multiplication scheme of a double-pulse generating circuit.
7. A DC bus multiplication nanosecond pulse power supply and a control method thereof improve the reliability of equipment and reduce the failure rate of the equipment by improving the working interval of a B-H curve of a magnetic core and reducing the number of turns of coils of a pulse step-up transformer and a magnetic switch.
Drawings
Fig. 1 is a schematic diagram of a nanosecond pulse power supply with multiplied DC bus and a control method.
Fig. 2 is a charging waveform diagram of a three-phase rectifying filter of an integrated buffer circuit in a direct-current bus multiplication nanosecond pulse power supply and a control method, wherein K2 and K1 represent switch states, 0 represents OFF and 1 represents ON.
Fig. 3 is an equivalent schematic diagram of a busbar cascade multiplication mode in a direct current busbar multiplication nanosecond pulse power supply and a control method.
Fig. 4 is an equivalent schematic diagram of a non-bus cascade multiplication mode in a dc bus multiplication nanosecond pulse power supply and control method, wherein x on the switch indicates off.
Fig. 5 is a waveform diagram of a nanosecond pulse power supply for multiplying a direct current bus by a bus cascade multiplication mode in a control method, and a pulse booster transformer TR2 for multiplying a single bus by 1900V, wherein 201 is a switching state of a PWM1 driving access control point 21 and a PWM2 driving access control point 22, 21=on, 22=off or 21=off, 22=on, 202 is a voltage schematic of direct current voltages DC1 and DC2 and an integrated magnetic core reset, and I1 is a current.
Fig. 6 is a waveform diagram of a non-bus cascade multiplication mode, a single bus 950V, and a nanosecond pulse power supply when a single pulse generator works, in which 203 is a switching state of a PWM1 driving access control point 21 and a PWM2 driving access control point 22, 21=on, 22=off or 21=off, 22=on, 204 is a voltage schematic of a pulse boosting transformer TR2 for resetting direct current voltages DC1, DC2 and an integrated magnetic core, and I1 is a current.
FIG. 7 is a graph of B-H for a DC bus multiplying nanosecond pulse power supply and control method.
Fig. 8 is a schematic diagram of a pulse booster transformer core reset circuit and magnetic switch core reset circuit in a dc bus multiplication nanosecond pulse power supply and control method.
FIG. 9 shows a 50mm diameter reactor and a 100mm diameter reactor in a DC bus multiplication nanosecond pulse power supply and control method, wherein 50 is a 50mm diameter reactor and 100 is a 100mm diameter reactor.
In the drawing, DC1 is direct-current voltage, V21 is a semiconductor power module, V22 is a semiconductor power module, 21 is a PWM1 drive access control point, 22 is a PWM2 drive access control point, V11, V12, V13 and V14 are H-bridge inverters formed by the semiconductor power modules, C11 is a resonance capacitor, L11 is a resonance inductor, TR1 is a dual-output high-frequency isolation transformer, ZD1 and ZD2 are two independent high-frequency rectifier bridges, C21 and C22 are filter capacitors, 11, 12, 13 and 14 are PWM drive input points of the H-bridge inverters formed by the V11, V12, V13 and V14 semiconductor power modules, V1, V2 and V3 are power thyristors, MZ1 is a rising edge control magnetic switch, MZ2 is a pulse falling edge magnetic switch, DCa and DCb are capacitors, TR2 is a pulse boosting transformer for integrated magnetic core reset, and P1 and P2 are voltage measuring points.
Detailed Description
The nanosecond pulse power supply with the adjustable multiplication peak value of the direct current bus is powered by a three-phase power frequency alternating current power supply, and mainly comprises a three-phase rectifying filter of an integrated buffer circuit, an adjustable double-isolation output direct current power supply, a double-pulse generating circuit, a pulse boosting transformer for integrated magnetic core reset, a pulse energy storage circuit, a pulse rising edge control circuit for integrated magnetic core reset, and a pulse width and falling edge control circuit for integrated magnetic core reset.
The three-phase rectifying filter of the integrated buffer circuit comprises a three-phase rectifying circuit, a buffer circuit, a filter capacitor, a control circuit of the buffer circuit and a control circuit of the three-phase rectifying circuit, wherein the three-phase rectifying circuit is composed of a power diode and a power thyristor.
The adjustable double-isolation output direct current power supply is provided by a three-phase rectifying filter of a front-stage integrated buffer circuit, and the circuit comprises an H-bridge inverter, a resonant capacitor, a resonant inductor, a double-output high-frequency isolation transformer and two independent high-frequency rectifying and filtering capacitors. The adjustable double-isolation output direct current power supply mainly provides two paths of direct current power supplies which are mutually isolated and independently output for a post-stage double-pulse generating circuit, and the voltage grade matching of the adjustable double-isolation output direct current power supply and a semiconductor power module in the double-pulse generating circuit is realized by designing the proper transformation ratio of a double-output high-frequency isolation transformer, meanwhile, the working frequency of an H-bridge inverter can be adjusted in real time in the operation process of a nanosecond-level pulse power supply, and the output peak voltage of the nanosecond-level pulse power supply is controlled and changed.
The output total power P DC of the adjustable double-isolation output direct current power supply should satisfy the following conditions:
P DC is the total output power of the adjustable double-isolation output DC power supply, C P1 is the capacitance value of the secondary connection energy storage capacitor of the pulse step-up transformer, U P1 is the highest peak voltage on the secondary connection energy storage capacitor of the pulse step-up transformer, Is the maximum repetition frequency of the double pulse generating circuit;
The double-output high-frequency isolation transformer of the adjustable double-isolation output direct-current power supply consists of a primary coil, a high-frequency transformer magnetic core and a secondary coil. The primary coil is a single coil, and the secondary coil is provided with two coils with the same number of turns, so that the output high-frequency alternating voltage is ensured to be equal. The transformation ratio of the high-frequency transformer is designed according to the maximum output direct-current voltage, and the maximum output direct-current voltage is 0.5-0.6 times of the maximum bearing reverse voltage of the semiconductor power module. The primary coil, the magnetic core and the secondary coil of the high-frequency transformer are isolated and withstand voltage, and the semiconductor power module with the maximum withstand reverse voltage of more than or equal to 4 times is designed according to cascade multiplication buses. Assuming that an IGBT module semi-conductive module with 1700V voltage is selected, the maximum output direct-current voltage is 850V-1020V, and the isolation withstand voltage of a primary coil, a high-frequency transformer core and a secondary coil of the high-frequency transformer is 6800V.
The filter capacitor of the adjustable double-isolation output direct-current power supply has a plurality of circuit functions, wherein the first function is direct-current filtering of high-frequency rectification, the second function is voltage equalizing of two loops of a double-pulse generating circuit, the third function is an energy storage capacitor of a pulse generator, and the fourth function is recovery of resonance residual energy of a pulse step-up transformer and a pulse energy storage circuit.
The filter capacitor should meet the requirements of multiple circuit function parameters of the DC filter and pulse generator at the same time. The capacitance values of the two groups of filter capacitors C DCa、CDCb of the adjustable double-isolation output direct-current power supply are equal, the capacitance value error is less than +/-1%, and the voltage equalizing requirement of the double-pulse generating circuit is met. The capacitance of the filter capacitor is required to meet the requirement of direct current filtering of high-frequency rectification, and the capacitance of the filter capacitor C DCa、CDCb is equal to that of a pulse generatorAnd C P1 is the capacitance value of the secondary connection energy storage capacitor of the pulse step-up transformer. When the capacitance of the filter capacitor C DCa、CDCb is too small, the peak value of the pulse boosting transformer can be fluctuated, the control precision is affected, and when the capacitance is too large, the cost is too high. The rated voltage of the two groups of filter capacitors C DCa、CDCb is larger than or equal to the maximum bearing reverse voltage of the semiconductor power module of the pulse generator.
The double pulse generating circuit is powered by an adjustable double-isolation output direct current power supply. The positive end of the filter capacitor C DCb of the DC power supply DCb is connected with one end of the semiconductor power module 2, the other end of the semiconductor power module 2 is connected with the negative end of the filter capacitor C DCa of the DC power supply DCa, the positive end of the filter capacitor C DCa of the DC power supply DCa is connected with one end of the semiconductor power module 1, the other end of the semiconductor power module 1 is connected with one end of the primary coil of the pulse boosting transformer, and the other end of the primary coil of the pulse boosting transformer is connected with the negative end of the filter capacitor C DCb of the DC power supply DCb to form a double-pulse generating circuit system of a DC bus cascade. The equivalent circuit is shown in fig. 3, and the leakage inductance of the transformer is hidden in the coil of the transformer. Each loop of the double-pulse generating circuit is also connected with a diode in parallel to provide protection for one semiconductor power module of the double-pulse generating circuit after fault.
The semiconductor power module 1 and the semiconductor power module 2 of the double pulse generating circuit are driven and controlled by PWM1 and PWM 2. The widths Pw of PWM1 and PWM2 are the same, and are related to the leakage inductance Ls of the pulse booster transformer, the transformation ratio N of the pulse booster transformer, and the pulse tank capacitor Ca. The driving width Pw is more than or equal to the leakage inductance Ls of the pulse step-up transformer, half of the resonance period of the product of the transformation ratio square of the pulse step-up transformer and the capacitor Ca of the pulse energy storage circuit, namely. When the semiconductor power module 1 and the semiconductor power module 2 of the double pulse generating circuit work in a bus cascade multiplication mode, an equivalent circuit schematic diagram is shown in fig. 3, PWM1 and PWM2 driving must be completely synchronous, the variation time errors of the rising edge and the falling edge of PWM1 and PWM2 driving waveforms must be controlled within 20ns, bus cascade multiplication is formed, the output peak voltage of a pulse power supply is multiplied, and the output waveform is shown in fig. 5. The semiconductor power module 1 and the semiconductor power module 2 of the double pulse generating circuit can also work in a non-bus cascade multiplication mode, an equivalent circuit schematic diagram is shown in fig. 4, namely, only one driving output is completely closed, the other driving output is in the non-bus cascade multiplication mode when the PWM1 driving output or the PWM2 driving output, the peak voltage of the pulse power supply output is only half of that of the bus cascade multiplication, and the output waveform is shown in fig. 6. The non-bus cascade multiplication mode can be applied to occasions where the load needs to operate at lower voltage under certain working conditions and the condition that one of the semiconductor power modules 1 has a driving fault, and the pulse power supply still maintains certain pulse voltage output capability before shutdown maintenance.
The semiconductor power module 1 and the semiconductor power module 2 of the double pulse generating circuit are connected with reverse diodes in parallel beside the semiconductor power module 1 and the semiconductor power module 2, and after the switches in the semiconductor power module 1 and the semiconductor power module 2 are disconnected, reverse pulse current of the pulse generator is recharged through the reverse diodes and flows into a filter capacitor of the pulse power supply again.
The double pulse generating circuit can only be used for outputting single-polarity pulse power supply, outputting positive polarity or negative polarity, and changing the positive and negative polarities of the pulse power supply output only needs to change two connection points of the primary coil of the pulse boosting transformer, and the positive and negative polarities of the pulse power supply output can be changed by exchanging each other.
The working currents of the two groups of filter capacitors of the double pulse generating circuit and the working currents of the two semiconductor power modules are controlled, so that the requirement of continuous operation allowable maximum average current value and the requirement of continuous operation allowable maximum pulse current value are simultaneously met, and two formulas of control operation are simultaneously established:
In order to facilitate the program operation of the automatic control, the calculation formula of the control operation is further optimized as follows:
Wherein I VA is the maximum average current value allowed by continuous operation of the semiconductor power module of the double pulse generating circuit, I VP is the maximum pulse current value allowed by continuous operation of the semiconductor power module of the double pulse generating circuit, I CA is the maximum average current value allowed by continuous operation of two groups of filter capacitors, I CP is the maximum current value allowed by continuous operation of two groups of filter capacitors, U DCa、UDCb is two rated voltage values of an adjustable double-isolation output direct current power supply, C P1 is the capacitance value of a secondary connection energy storage capacitor of a pulse boosting transformer, N is the transformation ratio of the pulse boosting transformer, L S is the leakage inductance of the pulse boosting transformer, C P1 is the capacitance value of the secondary connection energy storage capacitor of the pulse boosting transformer, U P1 is the highest peak voltage on the secondary connection energy storage capacitor of the pulse boosting transformer, Is the maximum repetition frequency of the double pulse generating circuit.
When the pulse power supply operates, the working current of the pulse current is very large, the equivalent series resistance ESR of the filter capacitor is smaller than 60 mu omega, otherwise, the filter capacitor is damaged due to excessively high temperature. Equivalent series resistance
ESR=tanδ/(2π×f×C)
Wherein tan delta represents loss tangent equal to the ratio of active power to reactive power of the dielectric, f is the pulse operating frequency, and C is the capacitance of the capacitor.
And the primary coil of the pulse step-up transformer is connected with the double-pulse generating circuit, and the secondary coil of the pulse step-up transformer is connected with the pulse energy storage circuit. The low voltage pulse passes through the primary coil of the pulse boosting transformer, and is coupled through the magnetic core of the pulse boosting transformer, and the secondary coil of the pulse boosting transformer outputs high voltage pulse. Because the double pulse generating circuit can only be used for outputting a single-polarity pulse power supply, the magnetic core of the transformer works in the same quadrant of the B-H curve, the B-H curve of the magnetic core is shown in figure 8, the magnetic core is excited in a biased manner, the working interval is between-Br and-Bm or between +Br and +Bm, the working interval of the magnetic core is narrow, and the magnetic core is easy to saturate, so that faults are caused. The pulse boosting transformer is provided with an independent reset coil at the primary side and is connected to a magnetic core reset circuit. The magnetic core is reset reversely in a magnetic core B-H curve +Br to +Bm interval after the pulse power supply positive polarity outputs and the magnetic core is reset reversely in the magnetic core B-H curve +Br to +Bm interval after the pulse power supply positive polarity outputs, so that the magnetic core B-H curve can be reset to the magnetic core B-H curve-Br to-Bm interval and the available interval of the magnetic core B-H curve is from-Br to-Bm interval to +Br to +Bm interval during the next pulse output, the utilization rate of the magnetic core of the pulse booster transformer is greatly improved, meanwhile, the delta B is increased, the number of turns of the coil of the pulse booster transformer can be greatly reduced, the leakage inductance of the pulse booster transformer is controlled, and the performance of the pulse booster transformer is improved. The pulse power supply outputs in negative polarity, the magnetic core interval is opposite, and the principle is the same as that of the pulse power supply. The primary independent reset coil of the pulse boosting transformer is designed into 1 turn, and the insulation withstand voltage value of the reset coil of the pulse boosting transformer is larger than the highest peak voltage value of the secondary output of the pulse boosting transformer and is larger than the effective voltage value of the secondary output of the pulse boosting transformer under the highest peak voltage and the maximum working frequency. The reset circuit of the pulse boosting transformer is provided with an isolation transformer which is isolated from a power grid, so that the anti-interference capability can be improved, the higher the pulse repetition frequency is, the higher the reset voltage is, and the reset voltage U1 reset of the pulse boosting transformer magnetic core can meet the following formula:
U1reset is reset voltage of the pulse booster transformer magnetic core, N1 is number of turns of the pulse booster transformer reset coil, delta B1 is magnetic density-Bm- +Bm difference value of the pulse booster transformer magnetic core, S1 is magnetic core section of the pulse booster transformer, and Ts is cycle time corresponding to maximum repetition frequency of the double pulse generating circuit.
After the reset voltage U1 reset of the pulse booster transformer core is determined, a current limiting resistor is set to determine the core reset current, and the pulse booster transformer core reset current I1 reset determined by the current limiting resistor should satisfy the following formula:
n1 is the number of turns of a reset coil of the pulse booster transformer, hm1 is the magnetic field intensity corresponding to the B-H curve-Bm or +Bm of the magnetic core of the pulse booster transformer, and L1 is the magnetic path length of the magnetic core of the pulse booster transformer.
The pulse energy storage circuit mainly comprises one or more capacitors connected in series and is used for storing charges of pulse current. When the load is a capacitive load, the pulse energy storage circuit capacitance is greater than or equal to the load capacitance value.
The pulse rising edge control circuit for resetting the integrated magnetic core mainly comprises a magnetic switch. The rising edge controls the number of turns N of the magnetic switch coil, the sectional area S of the magnetic switch magnetic core and the magnetic density delta Bm of the magnetic switch magnetic core. The rising edge controlling the magnetic switching parameter is related to the voltage Uc across the pulsed tank capacitor Ca, the time Tmax for the voltage Uc across the pulsed tank capacitor Cp to rise to the highest peak voltage UcMax being equal toTherefore, the product of the number of turns N, the cross-sectional area S and the magnetic density DeltaBm of the magnetic switch should be larger than or equal to. The voltage Uc across the pulsed tank capacitor Ca, the duration Tc of the voltage Uc, the rising edge controlling the magnetic switching parameters:
When the volt-second product of the voltage Uc of the pulse energy storage circuit capacitor and the duration Tc of the voltage Uc exceeds the product of the number of turns N of the magnetic switch, the magnetic core sectional area S and the magnetic density delta Bm of the magnetic core, the rising edge controls the magnetic switch to be saturated and conducted, and power is rapidly supplied to a load. The magnetic switch saturation inductance can adjust the rising edge of the pulse.
The pulse width and falling edge control circuit for resetting the integrated magnetic core mainly comprises a magnetic switch and a discharge resistor. Voltage Up on the load, duration Tp of voltage Up on the load. The number of turns of the magnetic switch coil is controlled to be N, the sectional area S of the magnetic switch magnetic core is controlled, and the magnetic density of the magnetic switch magnetic core is delta Bm. The width control magnetic switch parameters should satisfy:
When the volt-second product of the voltage Up of the load and the duration time of the voltage Up is larger than the product of the number of turns N of the width control magnetic switch, the magnetic core sectional area S and the magnetic density delta Bm of the magnetic core, the width control magnetic switch is saturated and conducted, and the electric energy stored on the load is released through the saturated inductance and the discharge resistance of the magnetic switch and rapidly drops to zero, so that pulse width control is realized. The magnetic switch saturation inductance and the discharge resistance can adjust the pulse falling edge.
Because the double pulse generating circuit can only be used for outputting a single-polarity pulse power supply, the magnetic cores of the pulse rising edge control magnetic switch and the pulse falling edge magnetic switch also work in the same quadrant of the B-H curve, the B-H curve of the magnetic core is shown in figure 8, the magnetic core is excited in a bias way, the B-H curve of the magnetic core in a working interval is between-Br and-Bm or between +Br and +Bm, the working interval of the magnetic core is narrow, the magnetic density delta Bm of the magnetic core is small,The magnetic density delta Bm of the magnetic core in the formula is small, the number of turns N of the magnetic switch coil is required to be increased, the inductance after saturation of the magnetic switch is increased due to the increase of the number of turns N of the magnetic switch coil, and the performance of the magnetic switch is reduced sharply. The pulse rising edge controls the reset coil that the magnetic switch and pulse falling edge magnetic switch set up separately, because pulse rising edge and pulse falling edge interval is pulse width time, is smaller than 1us, therefore pulse rising edge controls the reset coil of the magnetic switch and pulse falling edge magnetic switch reset coil to connect in series, share a magnetic core reset circuit. The magnetic switch magnetic core is reset reversely by the magnetic core reset circuit in a magnetic core B-H curve +Br to +Bm interval after the pulse power supply positive polarity outputs and one pulse output is finished, so that the magnetic core is reset to the magnetic core B-H curve-Br to-Bm interval, the usable interval of the magnetic core B-H curve is from the-Br to-Bm interval to the +Br to +Bm interval during the next pulse output, the value of the magnetic switch delta Bm is greatly increased, the number of turns of the magnetic switch coil can be greatly reduced, the inductance after the magnetic switch is saturated, and the performance of the magnetic switch is improved. When the pulse power supply outputs with negative polarity, the magnetic switch magnetic core interval is opposite, and the principle is the same as that of the pulse power supply outputting with positive polarity. The reset coil of the magnetic switch is designed into 1 turn, and the insulation withstand voltage value of the reset coil of the magnetic switch is larger than the highest peak voltage value of the magnetic switch, and is simultaneously larger than the effective voltage value of the magnetic switch under the highest peak voltage and the maximum working frequency. The reset circuit of the magnetic switch is provided with an isolation transformer which is isolated from a power grid, so that the anti-interference capability can be improved, the higher the pulse repetition frequency is, the higher the reset voltage is, and the reset voltage U2 reset of the magnetic switch core can meet the following formula:
n2 is the number of turns of a reset coil of the magnetic switch, delta B2 is the difference value from-Bm to +Bm of the magnetic switch magnetic core, S2 is the section of the rising edge control magnetic switch, S3 is the section of the rising edge control magnetic switch, and Ts is the period time corresponding to the maximum repetition frequency of the double pulse generating circuit.
After the reset voltage U2 reset of the magnetic switch core is determined, a current limiting resistor is set to determine the core reset current, and the magnetic switch core reset current I2 reset determined by the current limiting resistor should satisfy the following formula:
N2 is the number of turns of the reset coil of the magnetic switch, hm2 is the magnetic field intensity corresponding to the B-H curve-Bm or +Bm of the magnetic switch magnetic core, L2 is the magnetic path length of the magnetic switch magnetic core, and when two or more magnetic switches are reset in series, the magnetic core is a magnetic path length.
One embodiment is a DC bus multiplication peak value adjustable nanosecond pulse power supply, which is shown in figure 1.
The three-phase rectifying filter of the integrated buffer circuit is mainly used for providing a direct current power supply for an adjustable double-isolation output direct current power supply, and meanwhile, the integrated buffer circuit fills the filter capacitor of the three-phase rectifying filter in advance before the pulse power supply works, so that the heavy current impact on the three-phase power frequency power supply is reduced. The three-phase power frequency alternating current power supply AC1 is connected into a three-phase rectifying circuit formed by power diodes D1, D2 and D3 and power thyristors V1, V2 and V3, and the capacitor C1 is used for filtering after power frequency alternating current rectification and outputting stable direct current. The control circuit of the three-phase rectifying circuit is characterized in that the power thyristors V1, V2 and V3 are triggered by a trigger control circuit consisting of a relay K1, current limiting resistors Ra, rb, rc and low-current diodes Da, db and Dc, and the on-off of the three-phase rectifying circuit is controlled through the on-off of the relay K1. The buffer circuit consists of a low-current diode D4, power diodes D2 and D3, a current limiting resistor R1 and a relay K2. The on/off of the buffer circuit is controlled by the on/off of the relay K2. Before the power works, the relay K2 is controlled to be attracted through the control point 2, the buffer circuit charges the capacitor C1, and after the voltage of the capacitor C1 is charged high, the relay K1 is controlled to be attracted through the control point 1, so that the heavy current impact of zero voltage charging of the capacitor C1 on the three-phase power frequency power supply is reduced. After the control relay K1 is attracted, the power thyristors V1, V2 and V3 are conducted after obtaining the trigger signals, the power three-phase rectifying circuit works, the buffer circuit is bypassed by the power three-phase rectifying circuit, and the buffer circuit works.
In the three-phase rectifying filter of the integrated buffer circuit, the charging process is shown in fig. 2, the control point 2 controls the relay K2 to be attracted, the direct-current voltage DC1 starts to rise, after 2-4 seconds of delay, the direct-current voltage DC1 rises to be close to the normal working voltage, the control point 1 controls the relay K1 to be attracted, and the direct-current voltage DC1 rises to the normal working voltage.
The adjustable double-isolation output direct current power supply mainly aims at improving the direct current voltage of a three-phase power frequency power grid after rectification, providing two paths of direct current power supplies with adjustable isolation independent output for a double-pulse generating circuit, realizing voltage class matching with a semiconductor power module in the double-pulse generating circuit by designing a proper transformation ratio of a double-output high-frequency isolation transformer, and simultaneously realizing cascade connection in the work of the double-pulse generating circuit and realizing the multiplication of a pulse power supply direct current bus. In the operation process of the nanosecond pulse power supply, the working frequency of the H-bridge inverter can be adjusted in real time, the voltage of the double-isolation output direct current power supply is changed, and the output peak voltage of the nanosecond pulse power supply is controlled to be changed. The adjustable double-isolation output direct current power supply is formed by providing a direct current power supply by a three-phase rectifying filter of an integrated buffer circuit, and the specific circuit comprises an H-bridge inverter formed by V11, V12, V13 and V14 semiconductor power modules, a resonant capacitor C11, a resonant inductor L11, a double-output high-frequency isolating transformer TR1, two independent high-frequency rectifying bridges ZD1 and ZD2 and filter capacitors C21 and C22. The semiconductor power modules V11, V12, V13 and V14 form 11, 12, 13 and 14 input PWM driving of the H bridge inverter, and the output voltage of the direct current power supply can be controlled by changing the PWM driving.
The double pulse generating circuit is powered by an adjustable double-isolation output direct current power supply. The positive end of a filter capacitor C22 of the direct current power supply is connected with one end of a semiconductor power module V22, the other end of the semiconductor power module V22 is connected with the negative end of a filter capacitor C21 of the direct current power supply, the positive end of the filter capacitor C21 of the direct current power supply is connected with one end of the semiconductor power module V21, the other end of the semiconductor power module V21 is connected with one end of a primary coil of a pulse boosting transformer TR2, and the other end of the primary coil TR2 of the pulse boosting transformer is connected with the negative end of the filter capacitor C22 of the direct current power supply to form a double-pulse generating circuit system of a direct current bus cascade. The equivalent circuit is shown in fig. 3. The leakage inductance Ls of the transformer is implicit in the coil of the transformer. Each loop of the double pulse generating circuit is also connected with a diode D21 and a diode D22 in parallel respectively, so that protection is provided after one semiconductor power module of the double pulse generating circuit fails.
The semiconductor power modules V21 and V22 of the double pulse generating circuit are driven and controlled by PWM1 and PWM 2.PWM1 drives access control point 21, PWM2 drives access control point 22. The widths Pw of PWM1 and PWM2 are the same, and are related to the leakage inductance Ls of the pulse booster transformer TR2, the pulse booster transformer transformation ratio N, and the pulse tank capacitor C31. The driving width Pw is more than or equal to half of the resonance period of the product of the leakage inductance Ls, the transformation ratio square and the pulse energy storage circuit capacitor C31 of the pulse step-up transformer TR2, namely. When the semiconductor power modules V21 and V22 of the double pulse generating circuit work in the bus cascade multiplication mode, the equivalent circuit schematic diagram is shown in fig. 3, PWM1 and PWM2 driving must be completely synchronous, the variation time errors of the rising edge and the falling edge of PWM1 and PWM2 driving waveforms must be controlled within 20ns, bus cascade multiplication is formed, the output peak voltage of the pulse power supply is multiplied, and the output waveform is shown in fig. 5. The semiconductor power modules V21 and V22 of the double pulse generating circuit can also work in a non-bus cascade multiplication mode, an equivalent circuit schematic diagram is shown in fig. 4, namely, only one driving output is completely closed, the other driving output is in the non-bus cascade multiplication mode when the PWM1 driving output or the PWM2 driving output, the peak voltage of the pulse power supply output is only half of that of the bus cascade multiplication, and the output waveform is shown in fig. 6. The non-bus cascade multiplication mode can be applied to occasions where the load needs to operate at lower voltage under certain working conditions and the condition that one of the semiconductor power modules 1 has a driving fault, and the pulse power supply still maintains certain pulse voltage output capability before shutdown maintenance.
The semiconductor power module V21 and the semiconductor power module V22 of the double pulse generating circuit are connected with reverse diodes in parallel beside the semiconductor power module V21 and the semiconductor power module V22, and after the switches in the semiconductor power module V21 and the semiconductor power module V22 are disconnected, reverse pulse current of the pulse generator is charged back through the reverse diodes and flows into filter capacitors C21 and C22 of the pulse power supply again.
The double-pulse generating circuit can only be used for outputting single-polarity pulse power supply, outputting positive polarity or negative polarity, and changing the positive and negative polarities of the pulse power supply output only needs to change two connection points of the primary coil of the pulse booster transformer TR2, and the positive and negative polarities of the pulse power supply output can be changed by exchanging each other.
The pulse booster transformer TR2 with the integrated magnetic core reset is characterized in that a primary coil of the pulse booster transformer TR2 is connected with a double-pulse generating circuit, a secondary coil of the pulse booster transformer TR2 is connected with a pulse energy storage capacitor C31, and the capacitance value of the pulse energy storage capacitor C31 is larger than or equal to that of a load capacitor CZ. The low-voltage pulse passes through the primary coil of the pulse boosting transformer TR2, and is coupled through the magnetic core of the pulse boosting transformer TR2, and the secondary coil of the pulse boosting transformer TR2 outputs a high-voltage pulse. The primary of the pulse boosting transformer TR2 is further provided with a Reset coil, the number of turns of the Reset coil is 1 turn, a Reset1 Reset circuit is connected with the Reset coil, the pulse power supply is assumed to output positively, after one pulse output is finished, a magnetic core of the pulse boosting transformer TR2 is Reset reversely in a region of a magnetic core B-H curve +Br to +Bm, the magnetic core Reset1 Reset circuit resets the magnetic core to a region of the magnetic core B-H curve-Br to-Bm, and the usable region of the magnetic core B-H curve is a region from-Br to-Bm to +Br to +Bm in the next pulse output, so that the utilization rate of the magnetic core of the pulse boosting transformer is greatly improved, meanwhile, the number of turns of the pulse boosting transformer coil is greatly reduced, the leakage inductance of the pulse boosting transformer is controlled, and the performance of the pulse boosting transformer is improved.
The magnetic switch MZ1 with the integrated magnetic core reset is a pulse rising edge control circuit, the magnetic switch MZ2 with the integrated magnetic core reset is a pulse width and falling edge control circuit, because the double pulse generating circuit can only be used for outputting a unipolar pulse power supply, the magnetic cores of the pulse rising edge control magnetic switch MZ1 and the pulse falling edge magnetic switch MZ2 work in the same quadrant of a B-H curve, the magnetic cores are excited in a biased manner, the B-H curve of the magnetic cores in a working interval is between-Br to-Bm or the working interval is between +Br to +Bm, the working interval of the magnetic cores is narrow, the magnetic density delta Bm of the magnetic cores is small,The magnetic density delta Bm of the magnetic core in the formula is small, the number of turns N of the magnetic switch coil is required to be increased, the inductance after saturation of the magnetic switch is increased due to the increase of the number of turns N of the magnetic switch coil, and the performance of the magnetic switch is reduced sharply. The Reset coils respectively arranged on the pulse rising edge control magnetic switch MZ1 and the pulse falling edge magnetic switch MZ2 are connected in series, and the Reset coils of the pulse rising edge control magnetic switch MZ1 and the pulse falling edge magnetic switch MZ2 share a magnetic core Reset2 Reset circuit because the pulse width time is less than 1us between the pulse rising edge and the pulse falling edge. The magnetic switch magnetic core is reset reversely by the magnetic core reset circuit in a magnetic core B-H curve +Br to +Bm interval after the pulse power supply positive polarity outputs and one pulse output is finished, so that the magnetic core is reset to the magnetic core B-H curve-Br to-Bm interval, the usable interval of the magnetic core B-H curve is from the-Br to-Bm interval to the +Br to +Bm interval during the next pulse output, the value of the magnetic switch delta Bm is greatly increased, the number of turns of the magnetic switch coil can be greatly reduced, the inductance after the magnetic switch is saturated, and the performance of the magnetic switch is improved. When the pulse power supply outputs with negative polarity, the magnetic switch magnetic core interval is opposite, and the principle is the same as that of the pulse power supply outputting with positive polarity. The reset coils of the MZ1 and MZ2 magnetic switches are designed to be 1 turn, and the insulation withstand voltage value of the reset coils of the MZ1 and MZ2 magnetic switches is larger than the highest peak voltage value of the magnetic switches, and is larger than the effective voltage value of the magnetic switches under the highest peak voltage and the maximum working frequency at the same time, so as to reduce the pulse induced voltages on the MZ1 and MZ2 reset coils and reduce the winding process of the MZ1 and MZ2 reset coils. The core B-H curve is shown in fig. 8.
The nanosecond pulse power supply scheme with the adjustable multiplication peak value of the direct current bus can not only improve the nanoscale pulse voltage performance, but also reduce the cost of the reactor.
An application example of a DC bus multiplication nanosecond pulse power supply and a control method is to treat the same gas flow, the same reactor height, different discharge distances, a 50mm diameter reactor and a 100mm reactor, as shown in figure 9. When the gas amount and the height of the reactor are kept unchanged, the same effective flow cross section exists, the diameter of the discharge tube is changed from 50mm to 100mm, the tube thickness is kept unchanged, and the diameter of the discharge electrode is kept unchanged, the number and the weight of the discharge electrode of the 100mm reactor are reduced by about 4.6 times, the number of the discharge tube is reduced by about 4.6 times and the weight of the discharge tube is reduced by about 2.3 times compared with the 50mm reactor. The discharge distance of the reactor is increased, the weight of the reactor can be effectively reduced, the material cost is reduced, the number of discharge tubes and discharge electrodes is reduced, and the processing and manufacturing cost is also greatly reduced.
In order to reduce the cost of the reactor, the diameter of the discharge electrode is unchanged, the reactor is enlarged from 50mm to 100mm, the discharge distance of the reactor is increased from 15mm to 40mm, the discharge distance of the reactor is increased by about 2.67 times, the voltage value output by the nanosecond pulse high-voltage power supply is also required to be increased by at least 2.67 times, the corresponding peak voltage required to be pulse output is increased from 30KV to about 80KV, and the nanosecond pulse high-voltage power supply is required to be redesigned. The typical method can raise the transformation ratio N of the pulse step-up transformer, but the equivalent capacitance value of the reactor is changed by raising the transformation ratio of the pulse step-up transformer, the converted equivalent capacitance value of the reactor is the square of the transformation ratio, the capacitance value of N 2 C is very large by raising the transformation ratio of the high pulse step-up transformer, leakage inductance of the pulse step-up transformer is also increased by raising the transformation ratio, the rising edge and the pulse width of the pulse are influenced, the power supply characteristic is changed, and the application effect is poor. By adopting a direct current bus multiplication peak value adjustable nanosecond pulse power supply scheme, through an adjustable double-isolation output direct current power supply, about 530V direct current voltage obtained by rectifying 380V 50HZ power frequency three-phase power frequency is lifted to 950V direct current voltage output, and is matched with 1700V IGBT semiconductor modules, the double-pulse generation circuit bus cascade multiplication scheme further lifts the working voltage of a pulse generator to 1900V, the working voltage is lifted by 3.58 times, the realization can be realized without changing the transformation ratio of a pulse booster, and the space for further lifting the discharge distance cost reduction of a reactor is also provided.
It is specifically stated that reference throughout this specification to "an embodiment" or the like means that a particular feature, element or characteristic described in connection with the embodiment is included in the embodiment of the present application as broadly described. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment. That is, when a particular feature, element, or characteristic is described in connection with any embodiment, it is submitted that it is within the purview of one skilled in the art to effect such feature, element, or characteristic in connection with other embodiments, that the application is described with reference to various illustrative embodiments of the logical architecture and concepts of the application, but the scope of the application is not limited thereto, and that many other modifications and implementations may be devised by those skilled in the art within the scope of this disclosure, and various other insubstantial changes and modifications may be made to the gist change combination and/or arrangement of the technical scheme, and it is also obvious to those skilled in the art that other insubstantial changes and substitutions of implementation will be readily apparent that these modifications and implementations will fall within the scope and spirit of the principles of this disclosure.
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|---|---|---|---|---|
| CN113541653A (en) * | 2021-07-27 | 2021-10-22 | 温州大学 | Nanosecond steep-edge pulse signal generator based on transmission line reflection principle |
| CN116113132A (en) * | 2023-02-09 | 2023-05-12 | 山东大学 | A switchable power discharge system based on single and bipolar nanosecond pulses |
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