CN119206804A

CN119206804A - Electronic device

Info

Publication number: CN119206804A
Application number: CN202411502205.XA
Authority: CN
Inventors: 朱逸洁; 姚怡安; 简传枝; 陈明煌; 李淑芬; 廖小凤
Original assignee: Innolux Display Corp
Current assignee: Innolux Corp
Priority date: 2019-06-03
Filing date: 2019-06-03
Publication date: 2024-12-27
Also published as: CN112036212B; CN112036212A

Abstract

The present invention discloses an electronic device, which includes a first substrate, an optical sensor, a display unit, a second substrate and a first light blocking layer. The optical sensor is arranged on the first substrate. The display unit is arranged on the first substrate and includes a thin film transistor and an electrode, and the electrode is electrically connected to the thin film transistor. The second substrate includes a first side facing the optical sensor and a second side opposite to the first side. The first light blocking layer is arranged on the second side and includes a first opening. The first opening overlaps with the optical sensor, and the optical sensor overlaps with the thin film transistor.

Description

Electronic device

The application is a divisional application of an application patent application with the application date of 2019, 06 month 03, the application number of 201910478341.2 and the name of an electronic device.

Technical Field

The present invention relates to an electronic device, and more particularly, to an electronic device for receiving fingerprint data using an optical sensor.

Background

In general, fingerprint recognition can be applied to identity recognition, so with the development of electronic devices, fingerprint recognition functions are integrated into various electronic devices for wide use, such as smart phones, etc., and users can manage the electronic devices directly through fingerprint recognition without remembering passwords.

In order to enable the fingerprint sensor to receive the reflected light of the fingerprint of the corresponding area and sense the fingerprint profile of the area, in the existing electronic device with the plug-in fingerprint sensor, a collimator (collimator) is arranged on the plug-in fingerprint sensor to limit or screen the light received by the fingerprint sensor and reduce the interference of stray light. However, when the fingerprint sensor is embedded in an electronic device such as a display, the existing collimator cannot be provided, so that the fingerprint sensor is easily interfered by stray light, resulting in poor fingerprint recognition effect.

Disclosure of Invention

In an embodiment, the invention provides an electronic device, which includes a first substrate, an optical sensor, a display unit, a second substrate, and a first light blocking layer. The optical sensor is arranged on the first substrate. The display unit is arranged on the first substrate and comprises a thin film transistor and an electrode, and the electrode is electrically connected with the thin film transistor. The second substrate includes a first side facing the optical sensor and a second side opposite the first side. The first light blocking layer is disposed on the second side and includes a first opening. The first opening overlaps the optical sensor, and the optical sensor overlaps the thin film transistor.

Drawings

Fig. 1 is a schematic diagram of an electronic device according to a first embodiment of the present invention.

Fig. 2 is a schematic top view of the light blocking layer and the color conversion layer of the electronic device shown in fig. 1.

Fig. 3 is a detailed schematic top view of a portion of the components of the electronic device shown in fig. 1.

Fig. 4 is a schematic structural cross-section along section line A-A' of fig. 3.

Fig. 5 is a schematic diagram illustrating an element configuration of an electronic device according to a second embodiment of the present invention.

Fig. 6 is a detailed schematic top view of a part of elements of an electronic device according to a third embodiment of the present invention.

Fig. 7 is a schematic structural cross-section along section line B-B' of fig. 6.

Fig. 8 is a schematic diagram illustrating an element configuration of an electronic device according to a fourth embodiment of the present invention.

Fig. 9 is a schematic diagram illustrating an element configuration of an electronic device according to a fifth embodiment of the present invention.

Reference numerals illustrate 31-a first active layer; 32-a second active layer; 61-an array substrate structure; 62-facing substrate structure, 100, 200, 300, 400, 500-electronic device, 110-first substrate, 120-circuit structure layer, 122-first conductive layer, 124-second conductive layer, 126-third conductive layer, 128-fourth conductive layer, 129-transparent conductive layer, 130-display medium layer, 140-second substrate, 140 a-first side, 140 b-second side, 210-third substrate, 210 a-third side, 210 b-fourth side, IN 1-IN 8-insulating layer, 410-optical film layer, 410 a-protruding structure, AH1, AH 2-adhesive layer, BE-first electrode, BF-buffer layer, BL-backlight layer, CF-blocking layer, CF 1-first color portion, CF 2-second color portion, CF 3-third color portion, COV-cover plate, D1-first direction, D2-second direction, D3-third direction, db, df-distance, DOP-display gate, DT-drain electrode, DT-display gate, FG-L-F-L-C, R_1-R_6-ray, LB-bottom light shielding layer, LS 1-first light blocking layer, LS1 a-first outer surface, LS 2-second light blocking layer, LS2 a-second outer surface, LS 3-third light blocking layer, LS3 a-third outer surface, OP 1-first opening, OP 2-second opening, OP 3-third opening, PE-pixel electrode, PL-protective layer, PS 1-first semiconductor layer, PS 2-second semiconductor layer, PS 3-third semiconductor layer, sa, sb-size, SE-source, SI-input connection structure, SL 1-scan line, SL 2-data line, SL 3-third wire, SL 4-fourth wire, SO-output connection structure, ST-display switching element, SU-sensing unit, SPX 1-first sub-pixel, SPX 2-second sub-pixel, SPX 3-third sub-pixel, TE-second electrode, θ -angle.

Detailed Description

The present invention may be understood by reference to the following detailed description taken in conjunction with the accompanying drawings, wherein, for the sake of clarity and simplicity of illustration, the various drawings in the present invention depict only a portion of the electronic device, and the particular elements in the drawings are not necessarily to scale. In addition, the number and size of the elements in the drawings are illustrative only and are not intended to limit the scope of the invention.

Certain terms are used throughout the description and following claims to refer to particular components. Those skilled in the art will appreciate that electronic device manufacturers may refer to a same component by different names. It is not intended to distinguish between components that differ in function but not name. In the following description and claims, the terms "include", "have", and the like are open-ended terms, and thus should be interpreted to mean "include, but not limited to. Thus, when the terms "comprises," "comprising," "includes," and/or "including" are used in the description of the present invention, they specify the presence of stated features, regions, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, regions, steps, operations, and/or components.

When a corresponding element such as a film layer or region is referred to as being "on" another element (or variant thereof), it can be directly on the other element or other elements can be present therebetween. On the other hand, when an element is referred to as being "directly on" another element (or variant thereof), there are no elements between the two.

It will be understood that when an element or film is referred to as being "connected to" another element or film, it can be directly connected to the other element or film or intervening elements or films may be present. When an element is referred to as being "directly connected to" another element or film, there are no intervening elements or films present therebetween. In addition, when an element is referred to as being "coupled to" (or a variant thereof) another element, it can be directly connected to the other element or be indirectly connected (e.g., electrically connected) to the other element(s) through one or more elements.

The terms "about," "substantially," or "substantially" are generally construed to be within 20% of a given value or range, or to be within 10%, 5%, 3%, 2%, 1%, or 0.5% of a given value or range.

Although terms such as "first," "second," "third," etc. may be used to describe or name various elements, such elements are not limited by these terms. Such terms are used merely to distinguish one element from another element in the specification, regardless of the order in which such elements are manufactured. The same terms may not be used in the claims and may be substituted with "first", "second", "third", etc. in the order in which the elements of the claims are recited. Accordingly, in the following description, a first member may be a second member in the claims.

It is to be understood that the following exemplary embodiments may be substituted, rearranged, and mixed for the features of several different embodiments without departing from the spirit of the invention to accomplish other embodiments.

In the present invention, the electronic device may be any suitable type of electronic device, such as a display, a touch display, an antenna, etc., but not limited thereto. The display of the present invention may be a liquid crystal display, an organic light emitting diode display, a quantum dot material display, or other suitable display. Hereinafter, the electronic device is exemplified by a liquid crystal display. Further, the display below may be a color display or a monochrome display, and the shape of the display may be rectangular, circular, polygonal, a shape with curved edges, or other suitable shape.

Referring to fig. 1 and 2, fig. 2 is a top view, and fig. 1 is a cross-sectional view taken along a section line C-C' in fig. 2. The electronic device 100 of the present embodiment includes a plurality of sub-pixels, for example, a first sub-pixel SPX1, a second sub-pixel SPX2 and a third sub-pixel SPX3 capable of generating different color light rays, which are disposed in parallel. The first sub-pixel SPX1, the second sub-pixel SPX2 and the third sub-pixel SPX3 are, for example, a red sub-pixel, a green sub-pixel and a blue sub-pixel, respectively, so as to generate a color picture, but not limited thereto. According to some embodiments, the electronic device 100 includes a first substrate 110, an optical sensor FS, and a second substrate 140. The optical sensor FS is disposed on the first substrate 110. The second substrate 140 includes a first side 140a facing the optical sensor FS, and a second side 140b opposite to the first side 140 a. On both sides of the second substrate 140, a light blocking layer is disposed. Specifically, a first light blocking layer LS1 is disposed on the first side 140a and includes a first opening OP1. A second light blocking layer LS2 is disposed on the second side 140b and includes a second opening OP2. The first and second openings OP1 and OP2 overlap the optical sensor FS. In the present invention, the term "overlap" may be expressed as fully overlapping or partially overlapping. The first substrate 110 and the second substrate 140 are disposed opposite to each other, and the materials of the first substrate 110 and the second substrate 140 may each include glass, quartz, sapphire, polymers, or other suitable materials, wherein suitable polymers may be, for example, polyimide (PI), polyethylene terephthalate (polyethylene terephthalate, PET), but not limited thereto. The first substrate 110 and the second substrate 140 may be flexible substrates or hard substrates, but are not limited thereto. The materials of the first substrate 110 and the second substrate 140 may be the same or different from each other, and the first substrate 110 and the second substrate 140 may have a single-layer structure or a multi-layer structure.

According to some embodiments, the electronic device 100 includes an array substrate structure 61, and a pair of opposite substrate structures 62. Specifically, the array substrate structure 61 may include a first substrate 110 and a circuit structure layer 120 disposed on the first substrate 110. The opposite substrate structure 62 may include a second substrate 140, and a first light blocking layer LS1 and a second light blocking layer LS2 disposed on both sides of the second substrate 140.

According to some embodiments, the electronic device 100 may include a display apparatus, an antenna device, a sensing device, or a stitching device, but is not limited thereto. The electronic device may be a bendable or flexible electronic device. The electronic device may include, for example, a liquid crystal (liquid crystal) or a Light Emitting Diode (LED), and the LED may include, for example, an Organic LIGHT EMITTING Diode (OLED), a sub-millimeter light emitting diode (mini LED), a micro LED (micro LED), or a Quantum Dot Light Emitting Diode (QDLED), for example, a QLED, a QDLED, a fluorescent (fluorescence), a phosphorescent (phosphorescence), and any suitable materials may be used, but the foregoing may not be limited thereto. The antenna device may be, for example, a liquid crystal antenna, but is not limited thereto. The splicing device can be, for example, a display splicing device or an antenna splicing device, but is not limited to this. It should be noted that the electronic device may be any of the above arrangements, but is not limited thereto. The display device is used as an electronic device or a splicing device to illustrate the present invention, but the present invention is not limited thereto. When the electronic device 100 is a liquid crystal display, a display medium layer 130 may be disposed between the array substrate structure 61 and the opposite substrate structure 62, and the display medium layer 130 may be a liquid crystal layer. The electronic device 100 may further include a backlight layer BL and a color photoresist layer CF. The backlight layer BL may be disposed on a side of the first substrate 110 opposite to the second substrate 140, such that the backlight emitted by the backlight layer BL may sequentially pass through the first substrate 110 and the second substrate 140. According to some embodiments, the color photoresist layer CF may be disposed in the opposite substrate structure 62, for example, the color photoresist layer CF may be disposed on the first side 140a of the second substrate 140, for example, may be disposed over the first light blocking layer LS1, and closer to the first substrate 110 than the first light blocking layer LS 1. The color photoresist layer CF includes a first color portion CF1, a second color portion CF2 and a third color portion CF3 respectively located in the first sub-pixel SPX1, the second sub-pixel SPX2 and the third sub-pixel SPX3, wherein the first color portion CF1, the second color portion CF2 and the third color portion CF3 can convert the backlight into green light, red light and blue light respectively according to the colors generated by the first sub-pixel SPX1, the second sub-pixel SPX2 and the third sub-pixel SPX 3. According to other embodiments, a color photoresist layer CF (not shown) may be disposed in the array substrate structure 61 to form a color photoresist on array (COA; color filter on array) structure.

According to some embodiments, the first light blocking layer LS1 and the second light blocking layer LS2 may include, for example, black ink, black metal, black resin, and/or other suitable light shielding materials, and the materials of the first light blocking layer LS1 and the second light blocking layer LS2 may be the same or different from each other. Referring to fig. 2, the first light blocking layer LS1 and/or the second light blocking layer LS2 may include a display opening DOP. The display opening DOP defines a display area or an opening area (aperture area) to expose the color photoresist layer CF, so that light in the sub-pixel can pass through the display opening DOP to generate a picture. The area outside the display opening is a shading area. In addition, referring to fig. 1, the electronic device 100 may include a cover panel COV disposed on the opposite substrate structure 62. The cover plate COV is bonded to the opposite substrate structure 62 by the adhesive layer AH 1. Other film layers (not shown), such as a polarizing layer, may be optionally provided between the adhesive layer AH1 and the second light blocking layer LS 2.

Fig. 3 is a detailed schematic top view of a portion of the components of the electronic device shown in fig. 1, and fig. 4 is a schematic cross-sectional view taken along the section line A-A' of fig. 3. For simplicity of illustration, fig. 3 shows only the first sub-pixel SPX1 and the second sub-pixel SPX2 in a top view, and omits the color photoresist layer CF, the first light blocking layer LS1 and the second light blocking layer LS2. Referring to fig. 4, the circuit structure layer 120 is disposed on the first substrate 110. The circuit structure layer 120 may include a sensing unit SU and a display unit DU. The sensing unit SU may include the aforementioned optical sensor FS and a sensing switch element DT. The circuit structure layer 120 may include a first conductive layer 122, a second conductive layer 124, a third conductive layer 126, and a fourth conductive layer 128, which are disposed on the first substrate 110 and sequentially disposed toward the second substrate 140. The circuit structure layer 120 may include multiple insulating layers to electrically insulate at least a portion of the first conductive layer 122, at least a portion of the second conductive layer 124, at least a portion of the third conductive layer 126, and at least a portion of the fourth conductive layer 128. As shown IN fig. 4, the multi-layer insulating layers include, but are not limited to, insulating layers IN1, IN2, IN3-1, IN4, IN5, IN6, IN7, and IN8, for example. The number of insulating layers may vary according to actual needs.

As shown in fig. 3, the display unit DU may include a display switching element ST, a pixel electrode PE, a scan line (first conductive line) SL1 and a data line (second conductive line) SL2. The display unit DU is omitted in fig. 4 for simplicity of explanation. Fig. 4 shows only a detailed cross-sectional configuration of the optical sensor FS and the sensing switching element DT, but the display switching element ST is omitted. Referring to fig. 3, the switching element ST may be a thin film transistor, and the thin film transistor ST may include a gate electrode, a first active layer 31, a source electrode and a drain electrode. The first conductive layer 122 may include a scan line SL1, and the scan line SL1 may serve as a scan line of the display switching element ST. The second conductive layer 124 may include a data line SL2, and the data line SL2 may be used as a data line of the display switching element ST. The scan line SL1 may include a gate of the display switch element ST, the data line SL2 may include a source of the display switch element ST, and the pixel electrode PE may be electrically connected to a drain of the display switch element ST, but is not limited thereto. The first active layer 31 may have any suitable shape, and in fig. 3, the first active layer 31 is U-shaped, but not limited thereto. The top-view shape of the pixel electrode PE may correspond to the top-view shape of the sub-pixel, and each corresponds to the display opening DOP. Alternatively, the pixel electrode PE may have one or more slits, but is not limited thereto. In fig. 3, the scan line SL1 may extend along a first direction D1, the data line SL2 may extend along a second direction D2, and the first direction D1 and the second direction D2 may not be parallel to each other (e.g., may be perpendicular to each other). It should be noted that, when the scan lines SL1 and the data lines SL2 are not straight, the scan lines SL1 and the data lines SL2 may still extend in a substantially extending direction. The third direction D3 is a direction of the first substrate 110 toward the second substrate 140, and may be perpendicular to the first direction D1 and the second direction D2.

As illustrated in fig. 4, the sensing unit SU may include the aforementioned optical sensor FS and the sensing switching element DT. The sensing switching element DT may be electrically connected to the optical sensor FS. The sensing switching element DT may be a thin film transistor, and may include a gate electrode GE, a second active layer 32, a source electrode SE, and a drain electrode DE.

The materials of the conductive layers in the circuit structure layer 120 (e.g., the first conductive layer 122, the second conductive layer 124, the third conductive layer 126, and the fourth conductive layer 128) may include metals, transparent conductive materials (e.g., indium Tin Oxide (ITO), indium Zinc Oxide (IZO), etc.), other suitable conductive materials, or combinations thereof. The insulating layer in the circuit structure layer 120 may include, for example, silicon oxide, silicon nitride, silicon oxynitride, other suitable insulating materials, or combinations thereof, and the first active layer 31 and the second active layer 32 in the circuit structure layer 120 may include, for example, polysilicon (polycrystalline silicon), amorphous silicon (amorphous silicon), metal oxide semiconductor, other suitable semiconductor materials, or combinations thereof.

In fig. 3 and 4, the gate electrode (not shown) of the switching element ST, the scan line SL1 and the gate electrode GE of the sensing switching element DT may be formed by the first conductive layer 122 according to some embodiments. That is, the gate electrode (not shown) of the display switching element ST, the scan line SL1 and the gate electrode GE of the sensing switching element DT may be formed of the same conductive layer 122. The source and drain electrodes (not shown) of the display switching element ST, the data line SL2, and the source electrode SE and drain electrode DE of the sensing switching element DT may be formed of the second conductive layer 124. That is, the source and drain (not shown) of the display switching element ST, the data line SL2, and the source SE and drain DE of the sensing switching element DT may be formed of the same conductive layer 124. The first conductive layer 122 and the second conductive layer 124 may be metals. The first active layer 31 of the display switching element ST and the second active layer 32 of the sensing switching element DT may be formed of the same active layer (or semiconductor layer). That is, the sensing switch element DT and the display switch element ST can be manufactured by the same process, but not limited thereto. In some embodiments, the types or the film sequences of the sensing switch element DT and the display switch element ST may be different.

As shown in fig. 3, each sensing unit SU is located in one sub-pixel. That is, the first sub-pixel SPX1, the second sub-pixel SPX2 and the third sub-pixel SPX3 have a sensing unit SU, but not limited thereto. According to other embodiments, it is not required that each sub-pixel has one sensing unit SU. For example, although not shown, according to other embodiments, each three sub-pixels may have one sensing unit SU. That is, among the three consecutive sub-pixels, only one sub-pixel has one sensing unit SU, and the other two sub-pixels do not have the sensing unit SU. Or for example, there may be one sensing unit SU every six sub-pixels. According to other embodiments, the density of the sensing units SU may be lower than that of the sub-pixels.

Referring to fig. 1, the optical sensor FS can be configured to receive reflected light reflected by the finger FG and generate sensing signals (e.g. voltages or currents) with different magnitudes according to the intensity of the reflected light. Since the intensity of the reflected light reflected by the finger FG varies according to the fingerprint profile of the finger FG, the fingerprint profile can be determined by the magnitude of the sensing signal generated by the optical sensor FS. For example, the intensity of light reflected by the ridges may be greater than the intensity of light reflected by the valleys. The optical sensor FS may comprise a thin film transistor, a PN-type diode, a PIN-type diode, a schottky diode (schottky diode) or other suitable photoelectric conversion element. In fig. 4, the optical sensor FS includes a PIN diode, which includes a first semiconductor layer PS1, a second semiconductor layer PS2, and a third semiconductor layer PS3, for example, the first semiconductor layer PS1 may be a P-type semiconductor layer, the second semiconductor layer PS2 may be an intrinsic layer, and the third semiconductor layer PS3 may be an N-type semiconductor layer. The second semiconductor layer PS2 is located between the first semiconductor layer PS1 and the third semiconductor layer PS 3. The semiconductor layers PS1, PS2, PS3 may include amorphous silicon, polysilicon, metal oxide semiconductor, other suitable semiconductor materials, or combinations thereof, but are not limited thereto. In addition, the lower and upper sides of the PIN diode may BE respectively provided with a first electrode BE and a second electrode TE, wherein the first electrode BE may BE formed by the third conductive layer 126, for example. For example, the third conductive layer 126 may be a metal. The second electrode TE may be formed of a transparent conductive material (e.g., indium Tin Oxide (ITO), indium Zinc Oxide (IZO), etc.), but not limited thereto. The sensing switch element DT is electrically connected to the optical sensor FS, and is configured to control transmission of a sensing signal. In the present embodiment, the sensing switch element DT may BE, for example, a thin film transistor, and the source electrode SE of the sensing switch element DT may BE electrically connected to the first electrode BE of the optical sensor FS, but is not limited thereto.

Referring to fig. 3 and 4, in addition, according to some embodiments, the third conductive layer 126 may include a third conductive line SL3, and the fourth conductive layer 128 may include a fourth conductive line SL4. The third wire SL3 may be used to electrically connect the second electrode TE of the optical sensor FS to transmit a voltage to the optical sensor FS. The fourth wire SL4 may be electrically connected to the drain DE of the sensing switch element DT, so that the sensing signal generated by the optical sensor FS may be transmitted to, for example, the data processing unit or the data recognition unit through the sensing switch element DT and the fourth wire SL4 to obtain the fingerprint profile. According to some embodiments, the second electrode TE of the optical sensor FS is electrically connected by an input connection structure SI (e.g. comprising a topmost transparent conductive layer 129). The fourth conductive line SL4 may be used as an output line, and is electrically connected to the sensing switch element DT through the output connection structure SO, but not limited thereto. According to some embodiments, the circuit structure layer 120 may further include a fifth conductive layer (not shown) disposed on the fourth conductive layer 128, and at least a portion of the fifth conductive layer is electrically insulated from the fourth conductive layer 128, and the fifth conductive layer may be electrically connected to the second electrode TE of the optical sensor FS and may be used as a signal input line. In addition, in fig. 3, the data line SL2, the third conductive line SL3 and the fourth conductive line SL4 may overlap each other and extend along the second direction D2, wherein the line widths of the third conductive line SL3 and the fourth conductive line SL4 are substantially the same (denoted by SL3 (126)/SL 4 (128) in fig. 3), and the line width of the data line SL2 is greater than the line width of the third conductive line SL3, but not limited thereto, and the conductive line configuration may be designed according to the requirement. In addition, the circuit structure layer 120 may further include a buffer layer BF and a bottom light shielding layer LB, which are disposed between the second active layer 32 and the first substrate 110.

In the present invention, the first light blocking layer LS1 includes a first opening OP1, the second light blocking layer LS2 includes a second opening OP2, and the first opening OP1, the second opening OP2, and the optical sensor FS of the sensing unit SU correspond to each other in the third direction D3. In other words, the first and second openings OP1 and OP2 overlap the optical sensor FS of the sensing unit SU in the third direction D3. In the present embodiment, the size of the first opening OP1 may be substantially the same as the size of the second opening OP2, but is not limited thereto. It should be noted that the dimensions of the opening described herein may be a diameter, a length, a width, or a dimension in a direction perpendicular to the third direction D3. In some embodiments, the first opening OP1 and the second opening OP2 may be different in size, for example, the first opening OP1 may be larger or smaller in size than the second opening OP 2. It should be noted that, although the dimensions of the first opening OP1 and the second opening OP2 may be designed to be the same, there may be differences in actual measurement due to process errors, for example, the dimensions of the first opening OP1 and the second opening OP2 may be within 20%, 10%, 5%, 3%, 2%, 1% or 0.5%.

As shown in fig. 2, in fingerprint sensing, the sub-pixels adjacent to the sensing unit SU may be turned on, so that the backlight generated by the backlight layer BL is emitted from the turned-on sub-pixels. Next, as shown in fig. 1, when the light irradiates the finger FG, the reflected light sequentially passes through the second opening OP2 and the first opening OP1, and then irradiates the optical sensor FS of the sensing unit SU. Therefore, under this design, the first light blocking layer LS1 and the second light blocking layer LS2 can block stray light from impinging on the optical sensor FS, and make the reflected light (such as the light rays l_1 and l_2) of the fingerprint feature point corresponding to the optical sensor FS impinge on the optical sensor FS, so as to improve the accuracy of detecting the fingerprint contour by the sensing unit SU. According to some embodiments, for an optical sensor FS, if the reflected light is not reflected by the fingerprint feature point corresponding to the optical sensor FS, the reflected light is stray light for the optical sensor FS. In addition, the external ambient light can also be regarded as stray light for the optical sensor FS. For example, in fig. 1, the light rays r_1 and r_2 can be reflected light of the feature points corresponding to the adjacent optical sensors FS, and thus, stray light is generated for the middle optical sensor FS, and the light rays r_1 and r_2 are blocked by the second light blocking layer LS2 and do not irradiate the middle optical sensor FS. For another example, in fig. 1, the light rays r_3 and r_4 may be reflected light of the feature points corresponding to the farther optical sensor FS or ambient light, so that the stray light is still generated for the middle optical sensor FS, and the light rays r_3 and r_4 are blocked by the first light blocking layer LS1 and do not irradiate the middle optical sensor FS.

On the other hand, the first opening OP1 of the first light blocking layer LS1 and the second opening OP2 of the second light blocking layer LS2 can screen out the reflected light with a specific angle range. In fig. 1, for one optical sensor FS, when the reflected light of the corresponding feature point has an angle within the angle θ with respect to the third direction D3, the reflected light can irradiate the optical sensor FS through the second opening OP2 and the first opening OP1, thereby reducing the influence of the stray light on the optical sensor FS. The angle θ can be any suitable value, and can be designed according to practical requirements. For example, the angle θ of the present embodiment may be 60 degrees, but is not limited thereto. As can be seen from the above, in the present embodiment, the combination of the first opening OP1 of the first light blocking layer LS1 and the second opening OP2 of the second light blocking layer LS2 functions as a collimator (collimator) of the optical sensor FS of the sensing unit SU embedded in the electronic device 100, that is, the collimator is integrated in the opposite substrate structure 62.

In order to achieve the function of screening the reflected light angle and/or blocking the stray light, the design can be performed according to Sa: sb= (Db/2): (Df+Db/2) (as shown in FIG. 1) to improve the accuracy and sensitivity of detecting the fingerprint profile by the sensing unit SU. In the present embodiment, the dimension Sa is the dimension of the first opening OP1 of the first light blocking layer LS1, the distance Db is the distance between the first outer surface LS1a of the first light blocking layer LS1 and the second outer surface LS2a of the second light blocking layer LS2, and the distance Df is the distance between the outer surface of the electronic device 100 (i.e. the outer surface of the cover plate COV) and the second outer surface LS2a of the second light blocking layer LS 2. In some embodiments, the design may be based on other optical relationships. According to some embodiments, distance Db may be greater than or equal to 20 micrometers (μm) and less than or equal to 150 micrometers, distance Df may be greater than or equal to 600 micrometers and less than or equal to 1000 micrometers, dimension Sa may be greater than or equal to 1 micrometer and less than or equal to 10 micrometers, the ratio of distance Db to dimension Sa may be greater than or equal to 2 and less than or equal to 15, and/or dimension Sb may be less than or equal to 400 micrometers, but is not limited thereto. The above embodiment takes the light passing over the side edges of the first light blocking layer LS1 and the second light blocking layer LS2 as an example.

However, in other embodiments, when the sides of the first light blocking layer LS1 and the second light blocking layer LS2 are gentle slopes, the dimension Sa of the first opening may be selectively measured based on the condition that the bottom of the substrate is close to, for example, the width of the first opening OP1 in the cross section is measured based on the width of the second substrate 140 (the width above the first opening OP1 in fig. 1), and the line between the dimension Sa and the dimension Sb passes through the bottom of the second blocking layer LS2 (the width below the second opening OP2 in fig. 1), that is, the line between the left and right sides of the optical sensor FS of the sensing unit SU and the first opening OP1 passes through the bottom of the substrate near the left and right sides of the first opening OP1 and the bottom of the substrate near the left and right sides of the second opening OP 1.

In addition, the electronic device 100 may further include other required layers and structures. In some embodiments, the electronic device 100 may further optionally include a protective layer PL disposed between the color photoresist layer CF and the display medium layer 130. In some embodiments, the electronic device 100 may further include an alignment layer disposed on the upper side and/or the lower side of the display medium layer 130. In some embodiments, the electronic device 100 may include at least one optical film layer, for example, the electronic device 100 may include two polarizers, one of which may be disposed between the backlight layer BL and the first substrate 110, the other of which may be disposed between the second light blocking layer LS2 and the cover plate COV, and the polarizers may be attached by an adhesive material, but not limited thereto.

The electronic device of the present invention is not limited to the above embodiments, and other embodiments will be further disclosed herein, however, for simplicity of description and highlighting the differences between the embodiments and the above embodiments, the same elements are denoted by the same reference numerals, and overlapping portions will not be repeated herein.

Referring to fig. 5, fig. 5 is a schematic diagram illustrating an element configuration of an electronic device according to a second embodiment of the invention. As shown in fig. 5, the electronic device 200 of the present embodiment is different from the first embodiment in that the electronic device includes three light blocking layers. In detail, the electronic device 200 of the present embodiment further includes a third substrate 210, wherein a material of the third substrate 210 may include glass, quartz, sapphire, a polymer (such as Polyimide (PI), polyethylene terephthalate (polyethylene terephthalate, PET)) and/or other suitable materials, so as to be used as a flexible film or a hard film. The materials of the first substrate 110, the second substrate 140, and the third substrate 210 may be the same or different from each other, and the thicknesses of the first substrate 110, the second substrate 140, and the third substrate 210 may be the same or different from each other. For example, the first substrate 110 and the second substrate 140 may include glass, and the third substrate 210 may include a polymer layer, but is not limited thereto. In the present embodiment, the third substrate 210 may be attached between the second substrate 140 and the cover plate COV through the adhesive layer AH2, wherein the third substrate 210 includes a third side 210a facing the second substrate 140 and a fourth side 210b opposite to the third side 210 a. The electronic device 200 further includes a third light blocking layer LS3, and the material of the third light blocking layer LS3 may include, for example, black ink, black metal, black resin, and/or other suitable light shielding materials. The materials of the first, second and third light blocking layers LS1, LS2 and LS3 may be the same or different from each other. In the present embodiment, the third light blocking layer LS3 is disposed on the fourth side 210b, such that the second light blocking layer LS2 is located between the first light blocking layer LS1 and the third light blocking layer LS3, but the disposition is not limited thereto. In some embodiments, the second light blocking layer LS2 may be disposed on the third side 210a of the third substrate 210. Similarly, the third light blocking layer LS3 includes a third opening OP3, and the third opening OP3 corresponds to the first opening OP1, the second opening OP2, and the optical sensor FS of the sensing unit SU in the third direction D3. In other words, the third opening OP3 overlaps the first opening OP1, the second opening OP2, and the optical sensor FS of the sensing unit SU in the third direction D3. In the present embodiment, the size of the third opening OP3 may be substantially the same as the size of the first opening OP1, but is not limited thereto. In some embodiments, the size of the third opening OP3 may be greater than or less than the size of the first opening OP 1. In addition, in some embodiments, the opening of the middle light blocking layer may be smaller than or equal to the openings of the upper and lower light blocking layers, that is, the second opening OP2 of fig. 5 may have a size smaller than or equal to the size of the first opening OP1 and the third opening OP 3. In addition, the distance between the second light blocking layer LS2 and the first light blocking layer LS1 in the third direction D3 and the distance between the second light blocking layer LS2 and the third light blocking layer LS3 in the third direction D3 may be designed according to practical requirements, and in fig. 5, the distance between the second light blocking layer LS2 and the first light blocking layer LS1 in the third direction D3 may be the same as the distance between the second light blocking layer LS2 and the third light blocking layer LS3 in the third direction D3, but not limited thereto.

In fingerprint sensing, reflected light of the finger FG sequentially passes through the third opening OP3, the second opening OP2 and the first opening OP1 to be irradiated to the optical sensor FS of the sensing unit SU. Therefore, under this design, the first light blocking layer LS1, the second light blocking layer LS2 and the third light blocking layer LS3 can block stray light from impinging on the optical sensor FS and/or screen reflected light angles, so as to improve the accuracy of detecting the fingerprint profile by the sensing unit SU. In other words, in the present embodiment, the combination of the first opening OP1 of the first light blocking layer LS1, the second opening OP2 of the second light blocking layer LS2, and the third opening OP3 of the third light blocking layer LS3 can be used as a collimator corresponding to the optical sensor FS of the sensing unit SU embedded in the electronic device 200. In particular, in fig. 5, since there are three light blocking layers, more stray light can be blocked than in the first embodiment, for example, light rays r_5, r_6 having a larger angle with respect to the third direction D3 can be blocked by the light blocking layer located in the middle (e.g., the second light blocking layer LS 2). Furthermore, the distance between the second light blocking layer LS2 and the first light blocking layer LS1 in the third direction D3 may be the same or different from the distance between the second light blocking layer LS2 and the third light blocking layer LS3 in the third direction D3. In addition, in the present embodiment, the dimension Sa is the dimension of the first opening OP1, the distance Db is the distance between the first outer surface LS1a of the first light blocking layer LS1 and the third outer surface LS3a of the third light blocking layer LS3, the distance Df is the distance between the outer surface of the electronic device 200 (i.e. the outer surface of the cover plate COV) and the third outer surface LS3a of the third light blocking layer LS3, and the details of the dimension Sa, the dimension Sb, the distance Db and the distance Df are not described herein with reference to the first embodiment.

In addition, in other embodiments, the third light blocking layer LS3 may be disposed in the second substrate 140, such that the third light blocking layer LS3 is located between the first light blocking layer LS1 and the second light blocking layer LS2 to achieve a similar effect.

Referring to fig. 6 and 7, fig. 6 is a detailed top view of a part of elements of an electronic device according to a third embodiment of the invention, and fig. 7 is a schematic structural cross-sectional view along a section line B-B' of fig. 6. As shown in fig. 6 and 7, the difference between the present embodiment and the first embodiment is that the optical sensor FS of the sensing unit SU of the electronic device 300 of the present embodiment may overlap the display switch element ST in the third direction D3. Accordingly, the opening area of the display opening DOP may be increased to increase the opening ratio of the sub-pixel (e.g., increase the area of the pixel electrode PE). In addition, since the optical sensor FS may overlap the display switching element ST in the third direction D3, in order to avoid interference of such elements with each other in the third direction D3, the distance between the optical sensor FS and the display switching element ST in the third direction D3 may be increased. According to some embodiments, at least one layer or more of the display switching elements ST and at least one layer or more of the sensing switching elements DT are the same layer. For example, as described above, the active layer in the display switching element ST may be the same layer as the active layer in the sensing switching element DT. Therefore, increasing the distance between the optical sensor FS and the display switching element ST in the third direction D3 also means increasing the distance between the optical sensor FS and the sensing switching element DT in the third direction D3. Referring to fig. 4 and 7, IN fig. 4, an insulating layer IN3-1 is provided between the optical sensor FS and the second conductive layer 124, whereas IN fig. 7, an insulating layer IN3-1 and an insulating layer IN3-2 are provided between the optical sensor FS and the second conductive layer 124. That is, the circuit structure layer 120 of the present embodiment of fig. 7 may include an additional insulating layer IN3-2, compared to fig. 4 of the first embodiment, with a larger distance between the optical sensor FS and the second conductive layer 124 IN fig. 7, thereby reducing the interference of such elements with each other IN the third direction D3.

Referring to fig. 8, fig. 8 is a schematic diagram illustrating an element configuration of an electronic device according to a fourth embodiment of the invention. As shown in fig. 8, the electronic device 400 of the present embodiment has another type of collimator. In detail, the electronic device 400 may include an optical film layer 410 disposed on the second side 140b of the second substrate 140, wherein the optical film layer 410 may have a function of converging light. In the present embodiment, the optical film 410 may include a protrusion structure 410a, for example, but not limited to, a micro lens structure. In this embodiment, the optical sensor FS may correspond to the protrusion structure 410a, so that the reflected light of the fingerprint feature point corresponding to the optical sensor FS is converged after passing through the protrusion structure 410a and irradiates the optical sensor FS, and meanwhile, the influence of stray light is reduced, thereby improving the accuracy of detecting the fingerprint profile by the sensing unit SU. In fig. 8, for example, the optical sensor FS may overlap with the at least one protruding structure 410a in the third direction D3, but is not limited thereto. The number of the protruding structures 410a corresponding to the optical sensor FS and the corresponding manner between the optical sensor FS and the protruding structures 410a may be designed according to the requirements. In addition, in the present embodiment, the optical film 410 may be attached to the second side 140b of the second substrate 140 through the adhesive layer AH1 and located between the second substrate 140 and the cover COV, but not limited thereto. According to some embodiments, as shown in fig. 8, one optical sensor FS is provided in one sub-pixel SPX, and one optical sensor FS corresponds to one protrusion structure 410a. According to other embodiments, although not shown, it is not necessary to provide one optical sensor FS for each sub-pixel SPX, for example, only one optical sensor FS may be provided for a plurality of sub-pixels SPX (e.g., 3 or 6), and only one protrusion structure 410a may be provided for a plurality of sub-pixels SPX (e.g., 3 or 6).

Referring to fig. 9, fig. 9 is a schematic diagram illustrating an element configuration of an electronic device according to a fifth embodiment of the invention. As shown in fig. 9, the electronic device 500 of the present embodiment is different from the fourth embodiment in that the electronic device 500 further includes a first light blocking layer LS1 and a second light blocking layer LS2, wherein the first light blocking layer LS1 has a first opening OP1, the second light blocking layer LS2 has a second opening OP2, the first opening OP1 corresponds to the second opening OP2 and has a protrusion structure 410a, and the first opening OP1 and the second opening OP2 overlap with the optical sensor FS. The detailed descriptions of the first light blocking layer LS1 and the second light blocking layer LS2 can refer to the description of the first embodiment, and the detailed description is not repeated here. In fig. 9, the optical sensor FS, the first opening OP1, the second opening OP2, and the protruding structure 410a may overlap in the third direction D3, but not limited thereto. The number of the protruding structures 410a corresponding to the optical sensor FS, the first opening OP1, and the second opening OP2, and the corresponding manner between these structures can be designed according to requirements. In the present embodiment, the combination of the first opening OP1, the second opening OP2 and the protruding structure 410a may serve as a collimator corresponding to the optical sensor FS of the sensing unit SU embedded in the electronic device 500. In other embodiments, the electronic device 500 may include only one of the first light blocking layer LS1 and the second light blocking layer LS2, and thus, in this case, the protrusion structure 410a may be combined with the first opening OP1 or the second opening OP2 as a collimator corresponding to the optical sensor FS of the sensing unit SU embedded in the electronic device 500.

In summary, according to some embodiments, the electronic device is provided with an opening of the light blocking layer, which overlaps the optical sensor. According to some embodiments, the electronic device is provided with a protruding structure of the optical film layer overlapping the optical sensor. According to the configuration of some embodiments, the interference of stray light to the sensing unit can be reduced, so as to improve the accuracy of detecting the fingerprint profile by the sensing unit.

The above embodiments of the present invention are merely examples, and the present invention is not limited thereto, and various modifications and variations may be made by those skilled in the art, so long as the features of the embodiments do not depart from the spirit or conflict of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. An electronic device, comprising:

a first substrate;

an optical sensor, disposed on the first substrate;

A display unit is disposed on the first substrate and comprises:

a thin film transistor; and

an electrode electrically connected to the thin film transistor;

a second substrate including a first side facing the optical sensor and a second side opposite to the first side; and

a first light blocking layer disposed on the second side and comprising a first opening;

The first opening overlaps with the optical sensor, and the optical sensor overlaps with the thin film transistor.

2 . The electronic device as claimed in claim 1 , further comprising a second light blocking layer, wherein the second light blocking layer is disposed on the first side, and the second light blocking layer comprises a second opening, and the second opening overlaps with the first opening.

3 . The electronic device as claimed in claim 2 , wherein a size of the first opening is different from a size of the second opening.

The electronic device as claimed in claim 2 , wherein a size of the first opening is smaller than a size of the second opening.

5 . The electronic device as claimed in claim 2 , further comprising a third light blocking layer, wherein the first light blocking layer is located between the third light blocking layer and the second light blocking layer, and the third light blocking layer comprises a third opening.

6 . The electronic device as claimed in claim 5 , wherein the first opening, the second opening and the third opening overlap with each other.

7 . The electronic device as claimed in claim 1 , further comprising a covering layer, wherein the covering layer is disposed on the second substrate.