CN119125226B - Laser detection method for water adsorbed on wafer surface - Google Patents
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Abstract
The invention discloses a laser detection method for adsorbing water on the surface of a wafer, which comprises the steps of arranging two laser beams in a laser detection device, wherein one laser beam is taken as main laser beam, forming smaller light spots on the wafer after focusing, and carrying out small-area rapid heating, and the other laser beam is taken as detection light, is coaxial with the main laser beam, and carries out water detection on the wafer while heating. The method has the advantages that the whole wafer does not need to be heated, the water evaporation speed is high, and the wafer is detected immediately after evaporation without diffusion.
Description
Technical Field
The invention relates to the field of optical lenses and precise measurement, in particular to a laser detection method for water adsorption on the surface of a wafer.
Background
In semiconductor manufacturing, controlling the moisture content throughout the chemical delivery system is a critical task. This is because, when water reacts with gases used in semiconductor manufacturing, the water corrodes wet surfaces of the gas treatment parts and the gas delivery apparatus, creating troublesome particles and affecting the performance of the processing tool. In addition, if the system fails, serious safety problems may be caused and the system may be damaged.
In the previous process, the wafer must be cleaned during the transfer of the various equipment in the semiconductor process. After exiting the cleaning apparatus, it must remain Dry, known as "Dry In-Dry Out", because if the wafer is In a hydrated state, the wafer surface oxidizes rapidly and water droplets that are not visible to the naked eye can form water stains that affect subsequent processes.
The moisture detection of the surface of the semiconductor wafer is mainly as disclosed in the published patent application of China, publication No. CN115684265A, publication No. 2023, 2 and 3, wherein the moisture is changed into water vapor by heating, and then the water vapor is collected and then the moisture content is measured. The method is characterized in that the heating is carried out by using dry hot carrier gas or by using a heating lamp for irradiation heating, the heated area is large, the speed is low, the analysis of the water vapor content and the heating are not in the same place and time, and the measuring speed is low.
Disclosure of Invention
The invention aims to solve the technical problems that in the prior art, when water on the surface of a wafer is detected, the heating area is large, the heating is slow, and the measuring speed is slow. According to the laser detection method for the adsorbed water on the wafer surface, the main light source is adopted for rapid heating, and the auxiliary light source is adopted as detection light for measuring the water vapor concentration.
The technical scheme adopted is as follows:
a laser detection method for water adsorption on the surface of a wafer comprises the steps of arranging two laser beams in a laser detection device, wherein one laser beam is a main laser beam, forming a small light spot on the wafer after focusing, carrying out small-area rapid heating, and the other laser beam is detection light coaxial with the main laser beam, and carrying out water detection on the wafer while heating.
The laser detection device comprises a device shell, a detection laser light source for emitting detection light, a main laser light source for emitting main laser, a main laser reflector, a detection laser reflector, a vapor detector and a lock-in amplifier, wherein the detection laser light source and the main laser light source are arranged in the device shell, a wafer to be detected is horizontally arranged in the device shell and positioned at focuses of the main laser light and the detection light, the main laser reflector and the detection laser reflector are coaxial and are arranged in the device shell at intervals, the main laser reflector is highly transparent to the detection light and highly reflective to the main laser, the detection light reflectivity of the detection light reflector is 50%, the main laser is highly transparent to the main laser, the main laser emitted by the main laser light source is reflected by the main laser reflector and then irradiates into a wafer to be detected, the detection light emitted by the detection laser light source enters the detection laser reflector after being highly transparent to the main laser reflector, the detection light enters the detection laser reflector after being reflected by the wafer to be detected, the detection light enters the detection laser reflector after being reflected by the detection laser reflector, and the vapor detector is subjected to detection and the vapor detector is amplified to extract harmonic signals. In the laser detection device, the main laser is adopted to heat in a small area (about hundred micrometers), the heating time is short, and the surface moisture can be quickly evaporated into a gaseous state.
The invention further preferably adopts the wavelength with high absorptivity, when the material of the wafer to be detected is silicon, the wavelength of the main laser is 1.06 mu m, 1.5 mu m and 2.0 mu m, and when the material of the wafer to be detected is sapphire or lithium niobate, the wavelength of the main laser is 4 mu m-12 mu m. The wavelength with high absorptivity plays a role in heating, and the wavelength of the main laser is in the absorption region of the object to be detected.
Further preferably, the wavelength of the main laser is 4 μm-12 μm, and the detection laser light source is a carbon dioxide laser. The wavelength of the carbon dioxide laser is about 12 microns and is within the water vapor absorption peak.
In a further preferred embodiment of the present invention, the detection light uses a wavelength with high absorptivity, and the detection laser light source is a DFB semiconductor laser of near infrared or a QCL laser of mid infrared. The QCL laser wavelength is 3-12 microns, also within the moisture absorption peak.
Further preferably, the water vapor detector is a VIGO single-point mid-infrared detector.
Further preferably, the laser detection method of the technical scheme of the invention comprises the following steps:
Step 1, placing a wafer to be tested in a laser detection device, wherein the wafer to be tested is placed at the focus of main laser and detection light;
step 2, sealing the laser detection device, vacuumizing, and then filling dry nitrogen;
Step 3, simultaneously turning on a main laser source and a detection laser source, and focusing detection light and main laser on the wafer to be detected, wherein the main laser rapidly heats the wafer to be detected in a light spot with the diameter of 100 mu m to be heated to be more than 100 ℃, so that water adsorbed on the surface of the wafer to be detected is evaporated into water vapor, and meanwhile, the detection light emitted by the wafer to be detected enters a water vapor detector;
And 4, calculating the water vapor concentration according to the TDLAS principle.
The method has small focal spot, and is beneficial to improving heating efficiency.
In the step 2, the dry nitrogen is filled, and when the pressure of the filled nitrogen is the same as the atmospheric pressure, the filling of the nitrogen is stopped. Nitrogen helps to reduce air interference.
The technical scheme of the invention is further preferable, and the step 3 is preceded by the following steps of modulating the detection light according to a TDLAS method, wherein the specific method is as follows:
s1, modulating detection light into a triangular wave, wherein the frequency of the triangular wave is 100Hz, and the scanning wavelength of the triangular wave is 10Ghz;
s2, superposing sine waves on the detection light in the S1, wherein the frequency of the sine waves is 1KHz, and the scanning wavelength of the sine waves is 1GHz;
S3, multiplying the received detection light signal in the S2 with a sine wave with the frequency of 2KHz, and integrating to obtain modulated detection light.
The detection light is added before the step 3 to be modulated according to the TDLAS mode, so that the detection sensitivity can be improved.
Compared with the prior art, the invention has the following beneficial effects:
1. The laser detection method for the water adsorption on the wafer surface is realized by adopting two beams of laser, wherein one beam is called main laser, has higher power, forms smaller light spots on the wafer after focusing, so that the heating area is small, and the other beam is called detection light, is coaxial with the main laser and is used for detecting water.
2. The laser detection method for the adsorbed water on the surface of the wafer does not need to heat the whole wafer, has high water evaporation speed, and is detected immediately after evaporation without diffusion.
Drawings
FIG. 1 is a schematic view of the optical path inside a laser detection device according to the present invention;
FIG. 2 is a schematic diagram of the laser detection method of the present invention;
FIG. 3 is a waveform diagram of published data for absorption peaks of water vapor;
FIG. 4 is a waveform diagram of a moisture detection signal of a detection light;
Wherein, 1-detecting the laser source. The device comprises a 2-main laser source, a 3-main laser reflector, a 4-detection light reflector, a 5-water vapor detector, a 6-lock-in amplifier, a 7-wafer to be tested, 8-detection light and 9-main laser.
Detailed Description
The technical scheme of the present invention is described in detail below, but the scope of the present invention is not limited to the embodiments.
In order to make the contents of the present invention more comprehensible, the present invention is further described with reference to fig. 1 to 4 and the detailed description below.
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
As shown in FIG. 2, the embodiment is a laser detection method for water adsorption on the surface of a wafer, which comprises the steps of setting two laser beams in a laser detection device, wherein one laser beam is a main laser beam, forming a small light spot on the wafer after focusing, and carrying out small-area rapid heating, and the other laser beam is a detection light coaxial with the main laser beam, and carrying out water detection on the wafer while heating.
A laser detection method for water adsorption on the surface of a wafer comprises the following steps:
step 1, placing a wafer 7 to be tested in a laser detection device, wherein the wafer 7 to be tested is placed at the focus of a main laser 9 and a probe light 8;
step 2, sealing the laser detection device, vacuumizing, and then filling dry nitrogen;
Step 3, simultaneously turning on the main laser source 2 and the detection laser source 1, and focusing the detection light 8 and the main laser 9 on the wafer 7 to be detected, wherein the main laser 9 rapidly heats the wafer 7 to be detected in a light spot with the diameter of 100 mu m to be heated to be more than 100 ℃, so that water adsorbed on the surface of the wafer 7 to be detected is evaporated into water vapor, and meanwhile, the detection light 8 emitted by the wafer 7 to be detected enters the water vapor detector 5;
And 4, calculating the water vapor concentration according to the TDLAS principle.
The laser detection device mentioned in the laser detection method of the present embodiment includes a device housing (not shown in fig. 1), a detection laser light source 1 that emits detection light 8, a main laser light source 2 that emits main laser light 9, a main laser mirror 3, a detection light mirror 4, a moisture detector 5, and a lock-in amplifier 6. As shown in fig. 1.
The detection laser light source 1, the main laser light source 2, the main laser reflector 3, the detection light reflector 4, the water vapor detector 5 and the lock-in amplifier 6 are all arranged in the device shell.
The probe light 8 emitted by the probe laser light source 1 and the main laser light 9 emitted by the main laser light source 2 need to be converged on the wafer 7 to be tested and need to be overlapped. The wafer 7 to be tested is placed horizontally in the device housing and is located at the focus of the main laser light 9 and the probe light 8. As shown in fig. 2.
The probe light 8 and the main laser light 9 are combined and split by a coupler. The beam splitting lens adopts a 45-degree placed dichroic mirror, and the dichroic mirror is high in transmittance to main laser and semi-transparent and semi-reflective to detection light. The reflected light is output by reflection and detected by a detector.
Furthermore, in the method of the embodiment, the main laser and the probe light do not need to be coaxial, only the light spots on the wafer are required to be overlapped, and the main laser and the probe light can be obliquely incident.
As shown in FIG. 2, the method of the embodiment is preferably that the main laser reflector 3 and the detection light reflector 4 are coaxially and alternately arranged in the device shell, the main laser reflector 3 is high in transmission of the detection light 8 and high in reflection of the main laser light 9, the detection light reflector 4 is high in transmission of the detection light 8 with reflectivity of 50% and high in transmission of the main laser light 9, and the detection light 8 and the main laser light 9 are placed at 45 degrees.
As shown in fig. 1, the main laser 9 emitted by the main laser source 2 is reflected by the main laser mirror 3 and then is irradiated into the wafer 7 to be detected after being highly transmitted by the detection light mirror 4, the detection light 8 emitted by the detection laser source 1 is irradiated into the wafer 7 to be detected after being highly transmitted by the main laser mirror 3 and then enters the detection light mirror 4, the detection light 8 is reflected by the wafer 7 to be detected and then enters the detection light mirror 4, and then enters the water vapor detector 5 after being reflected by the detection light mirror 4, and the water vapor detector 5 performs water vapor detection and inputs signals into the phase-locked amplifier 6 to extract harmonic signals.
In the method of the embodiment, the main laser 9 adopts a wavelength with high absorptivity, when the material of the wafer 7 to be tested is silicon, the wavelength of the main laser 9 is 1.06 μm, 1.5 μm or 2.0 μm, and when the material of the wafer 7 to be tested is sapphire or lithium niobate, the wavelength of the main laser 9 is 4 μm-12 μm, for example, a carbon dioxide laser with the wavelength of 10 μm is used as the main laser light source 2.
In the method of this embodiment, the probe light 8 adopts a wavelength with high water vapor absorptivity, and the probe laser light source 1 is a DFB semiconductor laser of near infrared or a QCL laser of mid infrared.
As shown in fig. 3, when the absorption peaks of the gaseous water molecules are in the vicinity of 1.35 μm, 1.9 μm and 6 μm, a DFB semiconductor laser of near infrared or a QCL laser of mid infrared may be employed as the detection laser light source.
In the method of the embodiment, in order to improve sensitivity, the water vapor detector 5 is a VIGO single-point middle infrared detector, and the VIGO single-point middle infrared detector is a commercial part, and the specific model is LabM-I-6-01. Based on a VIGO single-point mid-infrared detector, a tunable semiconductor laser absorption spectroscopy (TDLAS) is adopted to detect water vapor.
In the method of the embodiment, step 4, the algorithm for calculating the water vapor concentration according to the TDLAS principle is as follows:
Above the original low frequency scanning signal (which is the low frequency signal of the probe light scanned onto the wafer 7 to be tested), a high frequency sinusoidal signal (frequency is ) Realizing wavelength modulation (QCL laser wavelength), then the instantaneous frequency of the QCL laser outputThe method comprises the following steps:;
For the initial probe light frequency corresponding to the scanning signal, The amplitude is modulated for the frequency corresponding to the modulated signal, and t is time.
Laser intensity after gas absorptionCan be expressed as:;
wherein the method comprises the steps of For the intensity of the incident light,For the absorption coefficient, C is the gas concentration and L is the optical path. In the detection of the concentration of a trace gas,<1, The formula is approximated as:;
Order the Fourier series expansion is carried out on the transmitted light intensity;
Wherein the method comprises the steps ofFor each subharmonic component, the magnitude is measured by a lock-in amplifier;
Where each subharmonic component is proportional to the gas concentration C. The second harmonic component is usually takenThat is;
At this time, the values other than C are assigned to K, and are usually calibrated by standard gas concentration to obtain;
WhileObtained from the signal measured by the lock-in amplifier.
Examples
The wafer 7 to be tested is a silicon wafer having a diameter of 4 inches and a thickness of 0.5mm. A continuous wave fiber laser with a wavelength of 1064nm is adopted, and the output power is 15W as a main laser source. A5.935 μm QCL laser is used as a detection light source. And collecting detection light by adopting a VIGO single-point mid-infrared detector.
The water molecules existing in the gas state have extremely strong absorption peaks at 5.935 mu m, as shown in figure 3, the modulated detection light is adopted to detect the high-concentration water molecules which are locally evaporated, and the returned detection signals are shown in figure 4. Wherein the absorption peak position is recessed due to absorption by water molecules, generating a second harmonic signal. The signal is inverted to calculate the water vapor concentration according to the traditional TDLAS theory. Specifically, this signal is multiplied by a sine wave of 2f=2khz and integrated over a period of 1 second, and the obtained integrated value is 9.8E6, corresponding to a water vapor concentration of 12%.
The above embodiments are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereto, and any modification made on the basis of the technical scheme according to the technical idea of the present invention falls within the protection scope of the present invention.
Claims (9)
1. A laser detection method for adsorbing water on the surface of a wafer is characterized in that two laser beams are arranged in a laser detection device, one laser beam is used as a main laser beam, a light spot is formed on the wafer after focusing, small-area rapid heating is performed, the other laser beam is used as detection light, the other laser beam is coaxial with the main laser beam, and the wafer is subjected to water detection while being heated.
2. The laser detection method for water adsorption on the wafer surface according to claim 1, wherein the laser detection device comprises a device housing, a detection laser light source (1) emitting detection light (8), a main laser light source (2) emitting main laser light (9), a main laser mirror (3), a detection light mirror (4), a water vapor detector (5) and a lock-in amplifier (6);
The device comprises a device shell, a main laser light source (1) and a main laser light source (2), a main laser reflector (3) and a detection light reflector (4), wherein the main laser light source (1) and the main laser light source (2) are arranged in the device shell, a wafer (7) to be detected is horizontally arranged in the device shell and is positioned at focuses of main laser light (9) and detection light (8), the main laser reflector (3) and the detection light reflector (4) are coaxially and alternately arranged in the device shell, the main laser reflector (3) is high in transmission of the detection light (8) and high in reflection of the main laser light (9), and the reflectivity of the detection light reflector (4) to the detection light (8) is 50 percent;
The method comprises the steps that main laser (9) emitted by a main laser light source (2) is reflected by a main laser reflector (3) and then irradiates into a wafer (7) to be detected after being transmitted by a detection light reflector (4), detection light (8) emitted by the detection laser light source (1) enters the detection light reflector (4) after being transmitted by the main laser reflector (3) and then irradiates into the wafer (7) to be detected, the detection light (8) enters the detection light reflector (4) after being reflected by the wafer (7) to be detected, and enters a water vapor detector (5) after being reflected by the detection light reflector (4), and the water vapor detector (5) detects water vapor and inputs signals into a lock-in amplifier (6) to extract harmonic signals.
3. The method for detecting the laser light absorbed by the surface of the wafer according to claim 2, wherein when the material of the wafer (7) to be detected is silicon, the wavelength of the main laser light (9) is 1.06 μm, 1.5 μm or 2.0 μm, and when the material of the wafer (7) to be detected is sapphire or lithium niobate, the wavelength of the main laser light (9) is 4 μm to 12 μm.
4. A method for laser detection of adsorbed water on a wafer surface according to claim 3, characterized in that the wavelength of the main laser (9) is 4 μm-12 μm, and the main laser light source (2) is a carbon dioxide laser.
5. The laser detection method for water adsorption on the wafer surface according to claim 2, wherein the detection laser light source (1) is a near infrared DFB semiconductor laser or a mid infrared QCL laser.
6. The laser detection method for water adsorption on the surface of the wafer according to claim 2, wherein the water vapor detector (5) is a VIGO single-point mid-infrared detector.
7. The method for laser detection of adsorbed water on a wafer surface according to claim 2, comprising the steps of:
step 1, placing a wafer (7) to be tested in a laser detection device, wherein the wafer (7) to be tested is placed at the focus of a main laser (9) and a detection light (8);
step 2, sealing the laser detection device, vacuumizing, and then filling dry nitrogen;
step 3, simultaneously turning on a main laser light source (2) and a detection laser light source (1), and focusing detection light (8) and main laser light (9) on a wafer (7) to be detected, wherein the main laser light (9) rapidly heats the wafer (7) to be detected in a light spot with the diameter of 100 mu m to be heated to be more than 100 ℃, so that water adsorbed on the surface of the wafer (7) to be detected is evaporated into water vapor, and meanwhile, the detection light (8) emitted by the wafer (7) to be detected enters a water vapor detector (5);
And 4, calculating the water vapor concentration according to the TDLAS principle.
8. The method according to claim 7, wherein in step 2, dry nitrogen is introduced, and the introduction of nitrogen is stopped when the pressure of the introduced nitrogen is the same as the atmospheric pressure.
9. The method for detecting the laser beam absorbed by the surface of the wafer according to claim 7, wherein the step 3 is preceded by the steps of modulating the probe light (8) according to the TDLAS method, and the specific method is as follows:
s1, modulating the detection light (8) into a triangular wave, wherein the frequency of the triangular wave is 100Hz, and the scanning wavelength of the triangular wave is 10Ghz;
s2, superposing sine waves on the detection light in the S1, wherein the frequency of the sine waves is 1KHz, and the scanning wavelength of the sine waves is 1GHz;
S3, multiplying the received detection light signal in the S2 with a sine wave with the frequency of 2KHz, and integrating to obtain modulated detection light (8).
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| CN114878593A (en) * | 2022-06-17 | 2022-08-09 | 中国科学院合肥物质科学研究院 | Wafer surface defect detection device and method |
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| TW476996B (en) * | 2000-02-28 | 2002-02-21 | Mitsubishi Material Silicon | Semiconductor manufacturing method and semiconductor manufacturing apparatus |
| JP2006344718A (en) * | 2005-06-08 | 2006-12-21 | Sony Corp | Foreign matter removal method |
| JP2008151591A (en) * | 2006-12-15 | 2008-07-03 | Canon Inc | Moisture detection method and film forming apparatus |
| US8367976B2 (en) * | 2008-03-21 | 2013-02-05 | Lawrence Livermore National Security, Llc | Laser heating of aqueous samples on a micro-optical-electro-mechanical system |
| JP7318212B2 (en) * | 2019-01-24 | 2023-08-01 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing system, and substrate processing method. |
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| CN114878593A (en) * | 2022-06-17 | 2022-08-09 | 中国科学院合肥物质科学研究院 | Wafer surface defect detection device and method |
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