CN119009657B - High-frequency radiation source based on photoinduced ultrafast ultrashort electronic pulse - Google Patents
High-frequency radiation source based on photoinduced ultrafast ultrashort electronic pulseInfo
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- CN119009657B CN119009657B CN202410959750.5A CN202410959750A CN119009657B CN 119009657 B CN119009657 B CN 119009657B CN 202410959750 A CN202410959750 A CN 202410959750A CN 119009657 B CN119009657 B CN 119009657B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S4/00—Devices using stimulated emission of electromagnetic radiation in wave ranges other than those covered by groups H01S1/00, H01S3/00 or H01S5/00, e.g. phonon masers, X-ray lasers or gamma-ray lasers
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Abstract
The invention discloses a high-frequency radiation source based on a photoinduced ultrafast ultrashort electronic pulse. The radiation source comprises a cathode structure (11), a first insulating ceramic plate (32), a grid structure (12), a second insulating ceramic plate (33), a focusing electrode structure (13), a third insulating ceramic plate (34), an anode structure (14), a fourth insulating ceramic plate (35), an output section assembly (20), a fifth insulating ceramic plate (36) and a collector structure (15) which are sequentially arranged, through holes are formed in the center of the output section assembly, the small ultrafast laser (50) is arranged on the other side of the collector structure (15), laser generated by the small ultrafast laser (50) irradiates the surface of a nanometer cold cathode (111) through the through holes, and ultrafast and ultrashort electronic pulses generated on the surface of the nanometer cold cathode (111) are transmitted to the output section assembly (20) to generate electromagnetic waves. The radiation source disclosed by the invention has the advantages of simple structure, small volume, good stability and low cost.
Description
Technical Field
The invention relates to the field of radiation sources, in particular to a high-frequency radiation source based on photoinduced ultrafast ultrashort electronic pulses.
Background
With the development of technology, high-frequency electromagnetic waves are attracting more and more attention due to the development of the communication industry, and the necessary conditions for the development and utilization of high-frequency electromagnetic waves are high-frequency radiation sources. The high-frequency radiation source generates high-power narrow-band continuous electromagnetic waves and can be better applied to the research field of the high-frequency electromagnetic waves.
Although the existing high-frequency radiation source can generate high-frequency electromagnetic waves to some extent, the radiation source requires a complicated step for modulation because the electron beam initially generated does not contain high-frequency electric signals. In addition, since the integral radiation source needs to operate in a high frequency environment, the radiation source has a complicated structure, poor stability, and difficulty in processing. Meanwhile, some radiation sources often use a scene with limited space, and the existing radiation sources are huge and high in cost.
The prior art discloses a cold cathode radiation source based on spiral band electron beam. The radiation source consists of an electron gun, a metal shell and a guiding magnetic field generator. The electron gun consists of a cathode block, a cathode emission surface, an anode block and an insulator. The radiation source is bulky and complex in structure.
Disclosure of Invention
Aiming at the defects of complex structure, huge volume, poor stability and high cost of the radiation source in the prior art, the invention provides a high-frequency radiation source based on photoinduced ultra-fast ultra-short electronic pulse.
The primary purpose of the invention is to solve the technical problems, and the technical scheme of the invention is as follows:
a high-frequency radiation source based on photoinduced ultrafast ultrashort electronic pulse comprises a cathode structure, a grid structure, a focusing electrode structure, an anode structure, an output section assembly, a first insulating ceramic plate, a second insulating ceramic plate, a third insulating ceramic plate, a fourth insulating ceramic plate, a fifth insulating ceramic plate, an electrode wire, a small ultrafast laser, a collector structure and an insulating ceramic shell;
The cathode structure, the grid structure, the focusing electrode structure, the anode structure, the output section assembly, the first insulating ceramic sheet, the second insulating ceramic sheet, the third insulating ceramic sheet, the fourth insulating ceramic sheet, the fifth insulating ceramic sheet, the electrode wire and the collector structure are all positioned inside an insulating ceramic shell;
The cathode structure, the first insulating ceramic sheet, the grid structure, the second insulating ceramic sheet, the focusing electrode structure, the third insulating ceramic sheet, the anode structure, the fourth insulating ceramic sheet, the output section assembly, the fifth insulating ceramic sheet and the collector structure are sequentially arranged, and the small ultrafast laser is arranged on the other side of the collector structure;
the centers of the first insulating ceramic plate, the grid structure, the second insulating ceramic plate, the focusing electrode structure, the third insulating ceramic plate, the anode structure, the fourth insulating ceramic plate, the output section assembly and the fifth insulating ceramic plate are all provided with through holes, and the through holes are positioned on the same horizontal line;
the center of the surface of the cathode structure, which is contacted with the first insulating ceramic sheet, is provided with a nanometer cold cathode, and the nanometer cold cathode and the through hole are positioned on the same horizontal line;
the cathode structure, the grid structure, the focusing electrode structure and the anode structure are all provided with electrode rings, and are connected with an external driving circuit through electrode wires;
the collector structure is grounded;
The small ultrafast laser generates laser which irradiates the surface of the nanometer cold cathode through the through hole, and the surface of the nanometer cold cathode generates ultrafast ultrashort electronic pulse which is transmitted to the output section component to generate electromagnetic waves.
Further, a through hole is formed in the center of the insulating ceramic shell, and the insulating ceramic shell consists of an upper part and a lower part.
Further, the cathode structure, the gate structure, the focusing electrode structure, the anode structure, the output section assembly, the first insulating ceramic sheet, the second insulating ceramic sheet, the third insulating ceramic sheet, the fourth insulating ceramic sheet, the fifth insulating ceramic sheet and the collector structure are provided with threaded holes and are connected through screws.
Further, the diameter range of the through hole of the grid structure is 2-15 mm, the diameter range of the through hole of the focusing electrode structure is 3-20 mm, and the diameter range of the through hole of the anode structure is 3-20 mm.
Further, the material of the nanometer cold cathode is an ordered carbon nanotube film, a disordered carbon nanotube film, vertical few-layer graphene, tungsten and oxide nanometer materials thereof, molybdenum and oxide nanometer materials thereof or zinc oxide nanometer wires.
Further, the output section assembly comprises a resonant cavity and a waveguide, wherein the waveguide is positioned on one side of the resonant cavity.
Further, the waveguide is a rectangular waveguide, the length of the rectangular waveguide is 0.02-240 mm, and the width of the rectangular waveguide is 0.01-121 mm.
The dual-in resonant cavity is characterized in that the resonant cavity is a dual-in resonant cavity, the inner diameter of the dual-in resonant cavity is 0.01-100 mm, the height of the dual-in resonant cavity is 0.01-100 mm, the gap length of the resonant cavity is 0.01-50 mm, and the diameter range of a through hole of the resonant cavity is 0.01-100 mm.
Further, the collector structure is made of ITO quartz glass, wherein the surface of the collector structure facing the resonant cavity is conductive, and the rest surfaces are insulated.
Further, the output wavelength range of the small ultrafast laser is 300 nm-3 mm, the pulse width range is 5 fs-1 ns, and the average power range is 1W-10W.
Compared with the prior art, the invention has the beneficial effects that:
the invention enables the generated electron gun beam to directly carry high-frequency information through the arrangement of the cathode structure, the grid structure, the focusing electrode structure, the anode structure, the first insulating ceramic plate, the second insulating ceramic plate, the third insulating ceramic plate and the nanometer cold cathode, thereby reducing the high requirements on the intensity of a laser light source, the equipment volume and the like, omitting the steps and the device for modulating and focusing the speed and the density of the electron beam, reducing the complexity of the device and improving the integrality of the device. The collector structure avoids the accumulation of charges inside the device by recycling electrons, and can test current data more conveniently. The insulating ceramic sheets and the insulating ceramic housing have an insulating effect such that the individual components within the radiation source are not disturbed by the electric field of each other. In conclusion, the radiation source has the advantages of simple structure, small volume, good stability and low cost.
Drawings
Fig. 1 is a diagram of a high-frequency radiation source structure based on a photo-induced ultra-fast ultra-short electronic pulse according to embodiment 1.
Fig. 2 is a diagram of a high-frequency radiation source component based on a photo-induced ultrafast ultrashort electronic pulse according to embodiment 1.
Fig. 3 is an assembly diagram of a high-frequency radiation source component based on a photo-induced ultra-fast ultra-short electronic pulse according to embodiment 1.
Fig. 4 is a time domain waveform diagram of an electromagnetic wave output by a high frequency radiation source based on a photo-induced ultra-fast ultra-short pulse according to embodiment 1.
Fig. 5 is a frequency domain waveform diagram of an electromagnetic wave output by a high frequency radiation source based on a photo-induced ultra-fast ultra-short pulse according to embodiment 1.
Fig. 6 is a time domain waveform diagram of an electromagnetic wave output by a high frequency radiation source based on a photo-induced ultra-fast ultra-short pulse according to embodiment 2.
Fig. 7 is a frequency domain waveform diagram of an electromagnetic wave output by a high frequency radiation source based on a photo-induced ultra-fast ultra-short pulse according to embodiment 2.
Fig. 8 is a time domain waveform diagram of an electromagnetic wave output by a high frequency radiation source based on a photo-induced ultra-fast ultra-short pulse according to embodiment 3.
Fig. 9 is a frequency domain waveform diagram of an electromagnetic wave output by a high frequency radiation source based on a photo-induced ultra-fast ultra-short pulse according to embodiment 3.
Detailed Description
The drawings are for illustrative purposes only and are not to be construed as limiting the present patent;
for the purpose of better illustrating the embodiments, certain elements of the drawings may be omitted, enlarged or reduced and do not represent the actual product dimensions;
It will be appreciated by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
The technical scheme of the invention is further described below with reference to the accompanying drawings and examples.
Example 1
As shown in fig. 1, 2 and 3, a high-frequency radiation source based on a photo-induced ultra-fast ultra-short electron pulse comprises a cathode structure 11, a grid structure 12, a focusing electrode structure 13, an anode structure 14, an output section assembly 20, a first insulating ceramic sheet 32, a second insulating ceramic sheet 33, a third insulating ceramic sheet 34, a fourth insulating ceramic sheet 35, a fifth insulating ceramic sheet 36, an electrode wire 40, a miniature ultra-fast laser 50, a collector structure 15 and an insulating ceramic housing 31;
The cathode structure 11, the gate structure 12, the focusing electrode structure 13, the anode structure 14, the output section assembly 20, the first insulating ceramic sheet 32, the second insulating ceramic sheet 33, the third insulating ceramic sheet 34, the fourth insulating ceramic sheet 35, the fifth insulating ceramic sheet 36, the electrode wire 40, and the collector structure 15 are all located inside an insulating ceramic housing 31;
The cathode structure 11, the first insulating ceramic sheet 32, the gate structure 12, the second insulating ceramic sheet 33, the focusing electrode structure 13, the third insulating ceramic sheet 34, the anode structure 14, the fourth insulating ceramic sheet 35, the output section assembly 20, the fifth insulating ceramic sheet 36, and the collector structure 15 are sequentially disposed, and the small ultrafast laser 50 is disposed on the other side of the collector structure 15;
The centers of the first insulating ceramic sheet 32, the gate structure 12, the second insulating ceramic sheet 33, the focusing electrode structure 13, the third insulating ceramic sheet 34, the anode structure 14, the fourth insulating ceramic sheet 35, the output section assembly 20 and the fifth insulating ceramic sheet 36 are all provided with through holes, and the through holes are positioned on the same horizontal line;
A nanometer cold cathode 111 is arranged at the center of the surface of the cathode structure 11 contacted with the first insulating ceramic sheet 32, and the nanometer cold cathode 111 and the through hole are positioned on the same horizontal line;
the cathode structure 11, the gate structure 12, the focusing electrode structure 13 and the anode structure 14 are all provided with electrode rings, and are connected with an external driving circuit through electrode wires 40;
the collector structure 15 is grounded;
The small ultra-fast laser 50 irradiates the surface of the nano cold cathode 111 with laser light through the through hole, and the surface of the nano cold cathode 111 generates ultra-fast ultra-short electronic pulse, which is transmitted to the output section assembly 20 to generate electromagnetic waves.
In one embodiment, the cathode structure 11, the gate structure 12, the focusing electrode structure 13, the anode structure 14, the first insulating ceramic sheet 32, the second insulating ceramic sheet 33, the third insulating ceramic sheet 34, and the nano cold cathode 111 form an electron gun structure. The nanometer cold cathode 111 generates ultra-fast ultra-short electron pulse under the excitation of laser and the regulation of the bias electric field, and then forms electron gun beam after grid extraction, focusing electrode focusing and anode acceleration.
The electron gun structure can obtain the electron gun beam current with ultra-short pulse width and ultra-fast response under the condition of lower excitation light intensity, the electron gun beam current directly carries high-frequency information and has the characteristics of high quantum efficiency, high current, low energy dispersion and high brightness, and meanwhile, the electron gun structure reduces the high requirements on the intensity of a laser light source, the equipment volume and the like, omits the steps and the device for modulating and focusing the electron beam in speed and density, and does not need a microwave signal feed-in source.
It should be noted that, the electron gun structure makes the radiation source not need to use the high-frequency modulation system device to modulate the electron gun beam, and only through the simple resonant cavity 22 frequency selection and amplification, the high-frequency component carried in the pulsed electron beam can be directly extracted, and finally the electromagnetic wave is output through the waveguide 21. The complexity of the system is reduced, the structure of the radiation source device is simpler and more compact, the size of the source device is reduced, and the integrality of the device is greatly improved.
The insulating ceramic housing 31, the first insulating ceramic sheet 32, the second insulating ceramic sheet 33, the third insulating ceramic sheet 34, the fourth insulating ceramic sheet 35, and the fifth insulating ceramic sheet 36 have an insulating effect, so that the components in the radiation source are not interfered by each other's electric field.
In one embodiment, the electron gun beam current is a pulsed electron beam.
In one embodiment, the output wavelength range of the small ultra-fast laser is 300 nm-3 mm, the pulse width range is 5 fs-1 ns, and the average power range is 1-10W.
In one embodiment, the frequency range of the high-frequency electromagnetic wave output by the output section component 20 is 10ghz to 10thz.
Further, a through hole is formed in the center of the insulating ceramic housing 31, and the insulating ceramic housing is composed of an upper portion and a lower portion.
In a specific embodiment, the insulating ceramic housing 31 has a square overall structure, a cylindrical central through hole, two through holes on the side surface of the upper insulating ceramic housing, a through hole on the upper insulating ceramic housing, two through holes on the two sides for connecting the electron gun structure with an external power supply through electrode wires, four pins on the upper insulating ceramic housing and the lower insulating ceramic housing, M2 threaded holes on the pins, and M2 screws for fixing the upper insulating ceramic housing and the lower insulating ceramic housing.
Further, the cathode structure 11, the gate structure 12, the focusing electrode structure 13, the anode structure 14, the output section assembly 20, the first insulating ceramic sheet 32, the second insulating ceramic sheet 33, the third insulating ceramic sheet 34, the fourth insulating ceramic sheet 35, the fifth insulating ceramic sheet 36, and the collector structure 15 are provided with threaded holes and are connected by screws.
In one embodiment, the cathode structure 11, the gate structure 12, the focusing electrode structure 13, the anode structure 14, the output section assembly 20, the first insulating ceramic sheet 32, the second insulating ceramic sheet 33, the third insulating ceramic sheet 34, the fourth insulating ceramic sheet 35, the fifth insulating ceramic sheet 36, and the collector structure 15 are all provided with three M2 threaded holes, and the positions of the threaded holes of the respective components are the same.
Further, the diameter range of the through hole of the grid structure 12 is 2-15 mm, the diameter range of the through hole of the focusing electrode structure 13 is 3-20 mm, and the diameter range of the through hole of the anode structure 14 is 3-20 mm.
In one embodiment, the distance between the cathode structure 11 and the gate structure 12 ranges from 0.01mm to 10mm, the distance between the gate structure 12 and the focusing electrode 13 ranges from 0.01mm to 10mm, the distance between the focusing electrode 13 and the anode structure 14 ranges from 0.01mm to 10mm, the distance between the anode structure 14 and the resonant cavity 22 ranges from 0.01mm to 10mm, and the distance between the resonant cavity 22 and the collector structure 15 ranges from 0.01mm to 10mm.
Further, the material of the cold nano cathode 111 is an ordered carbon nanotube film, a disordered carbon nanotube film, a few vertical graphene layer, tungsten and its oxide nano material, molybdenum and its oxide nano material, or zinc oxide nanowire.
Further, the output section assembly 20 comprises a resonant cavity 22 and a waveguide 21, wherein the waveguide 21 is positioned on one side of the resonant cavity 22.
Further, the waveguide 21 is a rectangular waveguide, and has a length of 0.02 to 240mm and a width of 0.01 to 121mm.
Further, the resonant cavity 22 is a dual-in resonant cavity, the inner diameter of the dual-in resonant cavity is 0.01-100 mm, the height of the dual-in resonant cavity is 0.01-100 mm, the gap length of the resonant cavity 22 is 0.01-50 mm, and the diameter range of a through hole of the resonant cavity 22 is 0.01-100 mm.
In one embodiment, the through hole of the resonant cavity 22 is located at the center, and is used as an electronic channel, and is cylindrical in shape.
In one embodiment, ultra-fast ultra-short pulses of electrons are extracted through gate structure 12, focused by focusing electrode structure 13 and accelerated by anode structure 14 into resonant cavity 22. The electron gun beam is excited in the cavity 22 to produce an induced current and to produce a high frequency field. The electromagnetic wave is output through the waveguide 21.
Further, the collector structure 15 is made of ITO quartz glass, wherein the surface of the collector structure 15 facing the resonant cavity 22 is conductive, and the remaining surfaces are insulated.
The collector structure 15 made of the ITO quartz glass material may be transparent to laser light.
It should be noted that, the collector structure 15 collects the electron gun beam and guides the electron gun beam to the ground through the electrode wire, so as to realize the recovery of electrons, avoid the accumulation of charges inside the device, and simultaneously test the current data more conveniently.
Further, the output wavelength range of the small ultra-fast laser 50 is 300 nm-3 mm, the pulse width range is 5 fs-1 ns, and the average power range is 1-10 w.
In a specific embodiment, a picosecond laser with a wavelength range of 430-2400 nm, a laser pulse width of 100ps, an average power of 0.24W and a peak light intensity of 7.68MW cm -2 is adopted as the small ultra-fast laser 50, generated laser is incident along a direction of a central line 15 DEG of a high-frequency radiation source and is emitted to the nanometer cold cathode 111 through a through hole, the voltage of the cathode structure 11 is-550V, the voltage of the grid structure 12 is 0V, the voltage of the focusing electrode structure 13 is-1 kV, the voltage of the anode structure 14 is 500V, the radius of an electron gun beam generated by the nanometer cold cathode 111 is 1.2mm and carries high-frequency electronic information of 12.2GHz, the inner diameter of the resonant cavity 22 is 13.8mm, the height is 7mm, the diameter of an electron channel is 6mm, the length of the waveguide 21 is 15.8mm, the width is 7.9mm, and finally, as shown in fig. 4 and 5, the high-frequency electromagnetic wave output of 12.2GHz can be finally obtained. The embodiment shows the feasibility of the integrated and miniaturized high-frequency radiation source in practical application.
Example 2
Based on the high-frequency radiation source based on the photo-induced ultra-fast ultra-short pulse in the embodiment 1, namely the embodiment adopts the high-frequency radiation source with the same structure as the embodiment 1;
The picosecond laser with single-color wavelength of 800nm, laser pulse width of 28ps, average power of 1mW and peak light intensity of 1GW cm -2 is adopted as the small ultrafast laser 50, generated laser is incident along the direction of a central line of a high-frequency radiation source of 15 degrees and is emitted to the nanometer cold cathode 111 through a through hole, the voltage of the cathode structure 11 is 0V, the electric field of the grid structure 12 is 2MV m -1, the voltage of the focusing electrode structure 13 is 0.5kV, the electric field of the anode structure 14 is 50MV m -1, the pulse width of electron gun beam current is 28ps, the current peak value is 25mA, the radius is 0.025mm and carries electronic information of a terahertz frequency band, the inner diameter of the resonant cavity 22 is 0.71mm, the height is 0.43mm, the diameter of an electronic channel is 0.16mm, the length of the waveguide 21 is 0.9mm, the width of the waveguide 21 is 0.45mm, the axial guiding magnetic induction intensity is 0.2T as shown in fig. 6 and 7, and finally the terahertz wave output of 220GHz can be obtained. The embodiment embodies the technical effects and application value of the portable high-frequency radiation source with compact structure.
Example 3
The embodiment is based on the high-frequency radiation source based on the photo-induced ultra-fast ultra-short pulse described in the embodiment 1, namely the embodiment adopts the high-frequency radiation source with the same structure as the embodiment 1;
The picosecond laser with a single-color wavelength of 800nm, a laser pulse width of 100fs, an average power of 10mW and a peak light intensity of 10GW cm -2 is adopted as the small ultrafast laser 50, generated laser is incident along the direction of a central line of a high-frequency radiation source at 15 degrees and is emitted to the nanometer cold cathode 111 through a through hole, the voltage of the cathode structure 11 is 0V, the electric field of the grid structure 12 is 1MV m -1, the voltage of the focusing electrode structure 13 is 2kV, the electric field of the anode structure 14 is 50MV m -1, the pulse width of electron gun beam is 100fs, the current peak value is 0.8A, the radius is 0.01mm and the electron information of a terahertz frequency band is carried, the inner diameter of the resonant cavity 22 is 0.16mm, the height is 0.1mm, the diameter of an electron channel is 0.036mm, the length of the waveguide 21 is 0.2mm, the width is 0.1mm, the axial guiding magnetic induction intensity is 0.2T as shown in fig. 8 and 9, and finally the terahertz wave output of 1THz can be obtained. The embodiment embodies the invention and has wide application prospect.
The same or similar reference numerals correspond to the same or similar components;
the terms describing the positional relationship in the drawings are merely illustrative, and are not to be construed as limiting the present patent;
It is to be understood that the above examples of the present invention are provided by way of illustration only and not by way of limitation of the embodiments of the present invention. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the invention are desired to be protected by the following claims.
Claims (10)
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2343725A1 (en) * | 2010-01-11 | 2011-07-13 | Samsung Electronics Co., Ltd. | Terahertz radiation sources and methods of manufacturing the same |
| CN106058618A (en) * | 2016-05-24 | 2016-10-26 | 中国科学技术大学 | Terahertz radiation source based on multi-mode simultaneous coherent excitation |
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| CN112769024B (en) * | 2021-01-27 | 2021-11-19 | 中国人民解放军国防科技大学 | C-band relativistic Cerenkov oscillator with coaxial collector |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2343725A1 (en) * | 2010-01-11 | 2011-07-13 | Samsung Electronics Co., Ltd. | Terahertz radiation sources and methods of manufacturing the same |
| CN106058618A (en) * | 2016-05-24 | 2016-10-26 | 中国科学技术大学 | Terahertz radiation source based on multi-mode simultaneous coherent excitation |
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