CN1186627C - Chip of low power dissipation chemical gas sensor and its preparing method - Google Patents
Chip of low power dissipation chemical gas sensor and its preparing method Download PDFInfo
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- CN1186627C CN1186627C CNB031047866A CN03104786A CN1186627C CN 1186627 C CN1186627 C CN 1186627C CN B031047866 A CNB031047866 A CN B031047866A CN 03104786 A CN03104786 A CN 03104786A CN 1186627 C CN1186627 C CN 1186627C
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- Prior art keywords
- silicon
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- gas sensor
- chip
- power consumption
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- 238000000034 method Methods 0.000 title claims abstract description 9
- 239000000126 substance Substances 0.000 title abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 43
- 239000010703 silicon Substances 0.000 claims abstract description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 31
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 230000003647 oxidation Effects 0.000 claims abstract description 8
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 7
- 239000011651 chromium Substances 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 238000004377 microelectronic Methods 0.000 claims abstract description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 5
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 5
- 238000005260 corrosion Methods 0.000 claims description 12
- 230000007797 corrosion Effects 0.000 claims description 12
- 238000001259 photo etching Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 238000000151 deposition Methods 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 3
- 238000000206 photolithography Methods 0.000 abstract 3
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 238000003672 processing method Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 23
- 239000000463 material Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The present invention provides a micro silicon bridge type chip structure of a chemical gas sensor with low power consumption, and a preparation method of the micro silicon bridge type chip structure. The chip of a chemical gas sensor with low power consumption is in a bridge type silicon micro-structure, and a micro silicon bridge structure which has heating and sensitive electrodes on a silicon frame is formed finally by using a microelectronic micro technology to process a micro silicon bridge, a heating electrode and a sensitive electrode. The micro silicon bridge type chip structure of a chemical gas sensor with low power consumption has the manufacturing process flows: 1. preparing silicon wafers; 2. carrying out thermal oxidation; 3. depositing silicon nitride; 4. carrying out photolithography for the first time; 5. etching the silicon nitride, corroding silicon oxide and carrying out striping; 6. corroding silicon, and corroding the silicon nitride; 7. carrying the photolithography for the second time; 8. sputtering chromium / platinum, and carrying out stripping; 9. depositing the silicon oxide; 10. carrying out the photolithography for the third time; 11. etching the silicon oxide, and carrying out striping; 12. carrying out scribing; 13. corroding the silicon till penetrating through. The chip of a chemical gas sensor and the processing method of the chip of the present invention can realize the mass production of chemical gas sensors which have low power consumption and low cost by using the microelectronic technology.
Description
Technical field:
The invention belongs to the sensor of chemical gas technical field, relate in particular to the low-power consumption chemistry gas sensor that utilizes the silicon micro-electronic mechanical skill to realize.
Background technology:
Sensor of chemical gas has a wide range of applications in Industry Control, automobile and daily life.Because most sensor of chemical gas need be worked under the temperature of 300-400 degree, therefore the device power consumption made from conventional art is very big, has seriously hindered promoting the use of of sensor of chemical gas; Especially at present the demand to the low-power consumption sensor is very urgent aspect hand-held instrument and environmental monitoring.
Summary of the invention:
The low-power consumption chemistry gas sensor chip organization plan that the purpose of this invention is to provide a kind of little silicon bridge.
Another object of the present invention provides the sensor of chemical gas chip production method.
Technical scheme of the present invention is as follows:
Low-power consumption chemistry gas sensor chip is a kind of silicon microstructure of bridge-type, is to adopt the little silicon bridge of the little processes of microelectronics, heating electrode and sensitive electrode, finally forms a little silicon bridge structure that has heating and sensitive electrode on silicon frame.
The manufacturing process flow of low-power consumption chemistry gas sensor chip is as follows:
1, prepares silicon chip
2, thermal oxide
3, silicon nitride deposition
4, a photoetching (the silicon chip back side)
5, etch silicon nitride, corrosion oxidation silicon removes photoresist
6, corrosion silicon, corroding silicon nitride
7, secondary photoetching
8, sputter chromium/platinum is peeled off
9, silicon oxide deposition
10, third photo etching
11, etching oxidation silicon removes photoresist
12, scribing
13, corrosion silicon is to break-through
Advantage of the present invention and good effect: the invention provides a kind of novel low-power consumption chemistry gas sensor chip and job operation thereof, realized with the low-cost low-power consumption chemistry gas sensor of producing in enormous quantities of microelectric technique.Utilize microelectronic technique can carry out miniature scale processing, can the low-cost characteristics of making microstructure in enormous quantities, realized bridge-type very small chemical gas sensor chip structure by rational technological process and device architecture design.By miniaturization technologies sensor power consumption under the constant prerequisite of function is reduced about 60%.This microstructure has the good heat-resistance characteristic, can carry out the coating and the sintering of multiple gases sensitive material; Therefore be applicable to the device production of multiple low-power consumption gas sensor.This low-power consumption micro sensor of chemical gas chip cooperates research and the production that can carry out the variety classes gas sensor with the micro-sampling technology, for the sensor of chemical gas technology has been brought a kind of new, development and production approach flexibly.
Description of drawings:
Fig. 1 is thermal oxide 300 nanometers, silicon nitride deposition 140 nanometers, a photoetching
Fig. 2 is KOH corrosion silicon
Fig. 3 is the secondary photoetching, sputter chromium/platinum 300 nanometers
Fig. 4 is for peeling off the formation electrode
Fig. 5 is PECVD silicon oxide deposition 500 nanometers, third photo etching, and etching oxidation silicon removes photoresist
Fig. 6 corrodes silicon to break-through for KOH
Fig. 7 is the gas sensitive material preparation
Fig. 8 is little silicon bridge low-power consumption chemistry gas sensor chip structure top view
Fig. 9 is little silicon bridge low-power consumption chemistry gas sensor chip section of structure
Among the figure:
The 1-silicon chip, 2-monox/silicon nitride, the 3-photoresist, the 4-KOH corrosion region, 5-Cr/Pt, 6, the PECVD monox, the 7-gas sensitive material, the 8-pressure welding point, 9-corrodes reach through region, 10-sensitive electrode window.
Embodiment:
Be the representative processes flow process of the present invention below at manufacturing low-power consumption chemistry gas sensor:
1, prepares silicon chip (350 micron thickness, twin polishing, 100 crystal orientation)
2, thermal oxide 300 nanometers
3, silicon nitride deposition 140 nanometers
4, a photoetching (the silicon chip back side)
5, etching back side silicon nitride, corrosion oxidation silicon removes photoresist
6, KOH corrosion silicon, the phosphoric acid corrosion silicon nitride
7, secondary photoetching
8, sputter chromium/platinum (30 nanometer) is peeled off
9, PECVD silicon oxide deposition 500 nanometers
10, third photo etching
11, etching oxidation silicon removes photoresist
12, scribing
13, KOH corrosion silicon is to break-through
Claims (2)
1. low-power consumption chemistry gas sensor chip is characterized in that it being the little silicon bridge of the little processes of a kind of employing microelectronics, heating electrode and sensitive electrode, finally forms a silicon microstructure that has the bridge-type of heating and sensitive electrode on silicon frame.
2. the described low-power consumption of claim 1 chemistry gas sensor chip, its manufacturing process flow is as follows:
(1) prepares silicon chip
(2) thermal oxide
(3) silicon nitride deposition
(4) photoetching at the silicon chip back side
(5) etch silicon nitride, corrosion oxidation silicon removes photoresist
(6) corrosion silicon, corroding silicon nitride
(7) secondary photoetching
(8) sputter chromium/platinum is peeled off
(9) silicon oxide deposition
(10) third photo etching
(11) etching oxidation silicon removes photoresist
(12) scribing
(13) corrosion silicon is to break-through.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031047866A CN1186627C (en) | 2003-02-28 | 2003-02-28 | Chip of low power dissipation chemical gas sensor and its preparing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031047866A CN1186627C (en) | 2003-02-28 | 2003-02-28 | Chip of low power dissipation chemical gas sensor and its preparing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1431493A CN1431493A (en) | 2003-07-23 |
| CN1186627C true CN1186627C (en) | 2005-01-26 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031047866A Expired - Fee Related CN1186627C (en) | 2003-02-28 | 2003-02-28 | Chip of low power dissipation chemical gas sensor and its preparing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1186627C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7390622B2 (en) | 2003-10-16 | 2008-06-24 | Hai Kang Life Corporation Limited | Apparatus and methods for detecting nucleic acid in biological samples |
| CN100389508C (en) * | 2004-12-27 | 2008-05-21 | 北京大学 | Method for fabricating gas sensor in thin film |
| JP4115482B2 (en) * | 2005-02-22 | 2008-07-09 | 日本特殊陶業株式会社 | Gas sensor |
| CN100349309C (en) * | 2005-03-16 | 2007-11-14 | 北京青鸟元芯微系统科技有限责任公司 | Method for producing plane type gas sensor substrate by semiconductor technology |
| EP3480589B1 (en) * | 2017-11-03 | 2022-09-21 | Honeywell International Inc. | Electrochemical gas sensor constructed with mems fabrication technology |
| CN108020588A (en) * | 2017-11-13 | 2018-05-11 | 中北大学 | A kind of low-power consumption micro hot-plate high-temperature gas sensors and production method |
-
2003
- 2003-02-28 CN CNB031047866A patent/CN1186627C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1431493A (en) | 2003-07-23 |
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| SE01 | Entry into force of request for substantive examination | ||
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050126 |