CN118486601A - A packaging method for improving wafer warpage - Google Patents
A packaging method for improving wafer warpage Download PDFInfo
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- CN118486601A CN118486601A CN202410924172.1A CN202410924172A CN118486601A CN 118486601 A CN118486601 A CN 118486601A CN 202410924172 A CN202410924172 A CN 202410924172A CN 118486601 A CN118486601 A CN 118486601A
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- layer
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- release film
- copper
- copper column
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
The invention discloses a packaging method for improving wafer warpage, wherein a copper column layer is arranged on a lower die and is provided with a gap; the method comprises the following steps: placing a preset amount of resin at the position of the copper column layer; the release film is arranged on one side of the upper die, which faces the lower die; the method comprises the steps that a preset amount of resin is placed at the position of a copper column layer, and after a release film is arranged on an upper die, the upper die drives the release film to move downwards towards the copper column layer on a lower die, so that the resin is extruded by the release film and then enters a gap of the copper column layer to form a resin layer; at the same time, the release film is embedded in the copper pillar layer, so that the formed resin layer is lower than at least part of the copper pillar layer. Through the structure of the invention, after the resin is extruded by the intervention of the release film, at least part of the copper column layer is not covered by the resin layer, so that the thickness of the resin layer is reduced, the phenomenon of wafer warpage is reduced, and the time of the grinding process is shortened.
Description
Technical Field
The present invention relates to a wafer packaging method, and more particularly, to a packaging method for improving wafer warpage.
Background
The statements in this section merely provide background information related to the present disclosure and may not constitute prior art.
Wafer level packaging (WAFER LEVEL PACKAGING, WLP) is a semiconductor packaging technology that is performed at the wafer level. Unlike conventional chip packaging methods, wafer level packaging is performed on an entire wafer, rather than packaging after a single chip is completed. Compared with the packaging after cutting, the wafer-level packaging has no lead, bonding and plastic process, and the packaging does not need to be expanded outwards, so that the packaging size is almost equal to the chip size, higher output is realized on a single wafer, and the production period is shorter because the intermediate links are greatly reduced.
In the existing wafer level packaging operation, resin is generally required to be coated on the processed copper column layer for resin sealing so as to achieve the effect of protecting the chip. In general, in the case of resin sealing, it is often necessary to fill the gaps of the copper pillar layer with resin and compact the gaps, and then to perform subsequent operations such as polishing after the copper pillar layer and the like are completely covered with the resin. However, the thicker resin layer is coated, so that the influence of thermal expansion and shrinkage of the resin layer in the solidification and cooling processes is aggravated, the warping phenomenon of the whole wafer is caused, and the yield is influenced. Meanwhile, the thicker resin layer not only wastes more raw materials, but also needs to be ground for a longer time in the later period, so that the output efficiency is affected.
Disclosure of Invention
The invention aims to provide a packaging method for improving wafer warpage, which can enable at least part of copper column layers not to be covered by resin layers after the resin is extruded through the intervention of a release film, reduce the thickness of the resin layers, reduce the wafer warpage phenomenon and shorten the grinding flow time.
In order to achieve the above object, the present invention discloses the following encapsulation method for improving wafer warpage; the copper column layer is arranged on the lower die and is provided with a gap; the packaging method for improving wafer warpage comprises the following steps:
Placing a preset amount of resin at the copper column layer position;
arranging a release film on one side of an upper die, which faces the lower die;
The method comprises the steps that a preset amount of resin is placed on the copper column layer, and after the release film is arranged on the upper die, the upper die drives the release film to move downwards towards the copper column layer on the lower die, so that the resin is extruded by the release film and then enters a gap of the copper column layer to form a resin layer; at the same time, the release film is embedded into the copper pillar layer, so that the formed resin layer is lower than at least part of the copper pillar layer.
Further, after the step of placing a preset amount of resin on the copper pillar layer and after the release film is arranged on the upper die, the upper die drives the release film to move downwards towards the copper pillar layer on the lower die, so that the resin is extruded by the release film and enters into gaps of the copper pillar layer to form a resin layer, and the height of the gaps of the copper pillar layer is equal to the sum of the height of the release film and the height of the resin layer after extrusion, and the upper die stops extrusion and returns.
Further, after the step of "the upper die stops pressing and returns", the resin layer and the copper pillar layer are plane-ground by a grinding wheel at a position lower than the resin layer, so that the resin layer and the copper pillar layer are flush, and the copper pillar layer is exposed outward.
Further, in the step of performing plane grinding on the resin layer and the copper pillar layer at a position lower than the resin layer by a grinding wheel, after at least part of the copper pillar layer and the resin layer are removed, the grinding wheel stops grinding and returns after the copper pillar layer and the resin layer reach a preset height.
Further, in the step of placing a preset amount of resin at the copper column layer and after the release film is arranged on the upper die, the upper die drives the release film to move downwards towards the copper column layer on the lower die, so that the resin is extruded by the release film and then enters into a gap of the copper column layer to form a resin layer, the strength of the release film is smaller than that of the copper column layer, the strength of the release film is larger than that of the resin, and the release film is elastically deformed, so that the resin is uniformly extruded by the release film to form the resin layer with uniform height.
Further, the height difference between the gap of the copper column layer and the resin layer is equal to the thickness of the release film after elastic deformation.
Further, the difference in height between the slit of the copper pillar layer and the resin layer was 15 μm.
Further, a core silicon wafer layer is further included between the copper column layer and the lower die, so that at least part of copper columns in the copper column layer are arranged on the core silicon wafer layer.
Further, in the step of placing a predetermined amount of resin on the copper pillar layer, the resin is placed on the core silicon wafer layer at the position where a part of the copper pillar is located.
Further, the release film completely covers one surface of the upper die, which faces the lower die.
By the technical scheme, the invention has the following beneficial effects:
1. According to the packaging method for improving the wafer warpage, the release film is arranged on one side, which is extruded towards the lower die, of the upper die, so that after the resin is extruded by the release film, at least part of copper column layers are not covered by the resin layers due to the occupation of the release film, the thickness of the resin layers is reduced, the thermal expansion and contraction phenomena of the resin can be weaker due to the fact that the resin layers are thinner, the wafer warpage phenomenon is indirectly reduced, and the wafer is easier to be adsorbed by a horizontal grinding ceramic platform in a later grinding operation.
2. According to the packaging method for improving the wafer warpage, the thinner resin layer is formed after the resin is extruded, so that the grinding time of the resin can be reduced in the later processing process, and the output efficiency is remarkably improved.
3. The packaging method for improving the wafer warpage has the advantages that the thickness of the resin layer formed by the packaging method is lower, so that the resin consumption for forming the resin layer by extrusion is lower, and the cost is saved.
Drawings
In order to more clearly illustrate the embodiments of the present description or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some of the embodiments described in the present description, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a mold clamping process of a packaging method for improving wafer warpage according to an embodiment of the present disclosure;
FIG. 2 is a schematic diagram of a semi-inclusion resin layer of a packaging method for improving wafer warpage according to an embodiment of the present disclosure;
FIG. 3 is a schematic view of a full-inclusion resin layer of a packaging method for improving wafer warpage according to an embodiment of the present disclosure;
FIG. 4 is a schematic illustration of a polishing process of a packaging method for improving wafer warpage according to an embodiment of the present disclosure;
In the figure: 100. a copper pillar layer; 101. a slit; 200. a metal layer; 300. a glass layer; 1. a lower die; 2. an upper die; 3a, resin; 3b, a resin layer; 4. a release film; 5. a core silicon wafer layer; 6. a grinding wheel; 7. grinding the ceramic platform.
Detailed Description
In order to make the technical solutions in the present specification better understood by those skilled in the art, the technical solutions in the embodiments of the present specification will be clearly and completely described below with reference to the drawings in the embodiments of the present specification, and it is obvious that the described embodiments are only some embodiments of the present specification, not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are intended to be within the scope of the present disclosure.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "upper", "middle", "lower", "inner", "outer", "front", "rear", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or component to be referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention. The terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art. Hereinafter, an embodiment of the present invention will be described in terms of its overall structure.
Referring to fig. 1-2, a packaging method for improving wafer warpage in the present embodiment is shown, wherein a copper pillar layer 100 is disposed on a lower mold 1, and the copper pillar layer 100 has a slit 101; the packaging method for improving wafer warpage comprises the following steps: placing a preset amount of resin 3a at the position of the copper pillar layer 100; a release film 4 is arranged on one side of the upper die 2 facing the lower die 1; placing a preset amount of resin 3a at the position of the copper column layer 100, and after the release film 4 is arranged on the upper die 2, the upper die 2 drives the release film 4 to move downwards towards the copper column layer 100 on the lower die 1, so that the resin 3a is extruded by the release film 4 and then enters into gaps of the copper column layer 100 to form a resin layer 3b; at the same time, the release film 4 is embedded in the copper pillar layer 100, so that the resin layer 3b is formed lower than at least part of the copper pillar layer 100.
According to the method, before operation, a prefabricated wafer is firstly required to be placed in a lower die 1 matched with the lower die 1, specifically, the wafer comprises a copper column layer 100, a metal layer 200 and a glass layer 300 which are sequentially arranged, an operator places the wafer, the metal layer 200 and the glass layer 300 downwards in a limit area of the lower die 1 matched with the metal layer 200 and the glass layer 300, then a certain amount of resin 3a is coated above the copper column layer 100, an upper die 2 is started to operate, the lower die 1 is downwards moved, as one surface of the upper die 2 facing the lower die 1 is provided with a release film 4, in the downwards movement process, firstly the release film 4 contacts with the resin 3a above the copper column layer 100, and gradually extrudes and uniformly spreads the accumulated resin 3a, at the moment, the resin 3a flows between the gaps 101 between the copper column layers 100 under the action of pressure in the extrusion process of the accumulated resin 3a until the upper die 2 completely moves downwards, and the upper die 2 and the lower die 4 are completely separated from the copper column layer 1, and the release film 4 is in the contact with the copper column layer 100, and the copper column layer 3a is obviously deformed, and the strength of the resin 3b is remarkably higher than that the copper column layer 3 is extruded and the copper column layer 3 is formed, and the surface of the copper column layer 3 is obviously deformed, and the surface of the upper die 4 is separated from the copper column layer 3 and the copper column layer 3 is deformed.
In the above process, due to the limitation of the release film 4, at least the region where the release film 4 is located cannot form the resin layer 3b, but the region where the release film 4 contacts the copper pillar layer 100 is deformed by extrusion, and at least part of the copper pillar layer 100 is not covered by the resin layer 3b, so that the semi-inclusion (as shown in fig. 2) with a thinner resin layer 3b is finally formed compared with the conventional method of forming the resin layer 3b with a full inclusion (as shown in fig. 3), therefore, considering that the resin is an organic material of a polymer compound, the resin layer 3b with self-contained physical properties of thermal expansion and cold contraction can become weaker due to the content of the resin, and the warp deformation phenomenon of the wafer can be reduced, thereby being beneficial to improving the yield of products. Meanwhile, it is apparent that by means of the semi-inclusion resin layer 3b in the present embodiment, the resin 3a is used in a smaller amount, which is also advantageous in terms of cost saving in mass production processing.
Specifically, in the present embodiment, the Resin 3a for encapsulation is selected from Epoxy Resin (Epoxy Resin), has a better mechanical strength, can provide effective support for encapsulation, and has a stronger adhesive property.
Further, after the resin 3a is coated in the slit of the copper pillar layer 100 after being pressed by the release film 4, the resin layer 3b is formed, and such that at least part of the copper pillar layer 100 is not covered by the resin layer 3b, when the height of the slit 101 of the copper pillar layer 100 is equal to the sum of the height of the pressed release film 4 and the height of the resin layer 3b, the upper die 2 stops pressing and returns. In a state that the height of the gap 101 of the copper pillar layer 100 is equal to the sum of the height of the extruded release film 4 and the height of the resin layer 3b, the lower die 1 and the upper die 2 are at the height position of complete die assembly, at this time, the release film 4 achieves complete expected deformation, the extrusion degree of the release film 4 to the resin 3a reaches the maximum value, the resin 3a in the gaps 101 of the copper pillar layer 100 flows sufficiently, and the amount and the height of the resin 3a are kept uniform.
Further, as shown in fig. 4, after the upper die 2 stops pressing and returns, the operator takes the wafer having completed the semi-enclosed resin layer 3b from the lower die 1 and places it on the grinding ceramic table 7, starts the vacuum suction holes of the grinding ceramic table 7 to suck the glass layer 300 at the bottom of the wafer, and then starts the grinding wheel 6 to perform plane grinding on one side of the top of the copper pillar layer 100 and the resin layer 3b by the grinding wheel 6. During the grinding process by the grinding wheel 6, at least part of the copper pillar layer 100 and the resin layer 3b is removed by the grinding wheel 6, and the copper pillar layer 100 is exposed to the outside so that the grinding wheel 6 stops grinding and returns after the copper pillar layer 100 and the resin layer 3b reach a preset height. Through the above steps, since at least part of the copper pillar layer 100 in the present embodiment is not covered by the resin layer 3b, the grinding wheel 6 is in contact with the exposed area of the copper pillar layer 100 without resin first, the grinding difficulty is reduced, and the grinding speed is significantly faster than that of the conventional method in which the resin and the metal are ground together. After the exposed area of the copper pillar layer 100 without resin is polished, the copper pillar layer 100 covered by the resin layer 3b below is continuously polished until the polishing wheel 6 stops polishing and returns after reaching the preset polishing depth.
In the above process, compared with the existing full-inclusion resin, the resin layer 3b is thinner, and the resin amount is smaller, so that the metal layer 200, the glass layer 300 and the like of the wafer are less influenced by deformation of the resin layer 3b after thermal expansion and cold contraction, the bottom levelness of the glass layer 300 contacted with the grinding ceramic platform 7 is higher, the vacuum adsorption effect of the grinding ceramic platform 7 is better, and the copper pillar layer 100 and the resin layer 3b and the like on the glass layer 300 are fixed more firmly in the grinding process, so that the horizontal offset of the copper pillar layer 100 and the resin layer 3b caused by vibration and friction generated by grinding does not influence the quality of a finished product.
Further, as shown in fig. 1, after the resin 3a is extruded by the release film 4, the resin layer 3b is formed by coating in the slit of the copper pillar layer 100, and in the process that at least part of the copper pillar layer 100 is not covered by the resin layer 3b, the release film 4 is elastically deformed, so that the resin 3a is uniformly extruded by the release film 4, and the resin layer 3b having a uniform height is formed. Specifically, when the release film 4 is pressed down by the pushing of the upper die 2, the contact area of the release film 4 and the resin 3a is also partially elastically deformed, and the resin 3a flows more rapidly and uniformly between the gaps 101 of the copper pillar layer 100 and is flattened gradually by the elastic pressing of the release film 4 by virtue of the physical characteristics of the resin 3a flowing by itself due to the strength difference relationship among the resin 3a, the copper pillar layer 100 and the release film 4, so that the top surface of the finally formed resin layer 3b has a plane with higher levelness, which is helpful for improving the quality of post grinding.
Further, the height difference between the slit 101 of the copper pillar layer 100 and the resin layer 3b is equal to the thickness of the release film 4 after elastic deformation. Specifically, the difference in height between the slit 101 of the copper pillar layer 100 and the resin layer 3b was 15 μm. That is, in the present embodiment, after the upper mold 2 and the lower mold 1 are completely closed, the release film 4 is completely pressed and elastically deformed, and the thickness of the release film is the space occupied, that is, the thickness of the gap region of the resin-free layer 3b formed above the resin layer 3b, and the thickness of the gap is controlled to be 15 μm in the present embodiment by selecting the thickness of the release film 4. Under the above dimensional control, the thickness of the resin layer 3b can be reduced, the later grinding efficiency can be effectively enhanced, and the possibility that the thickness of the finished resin layer 3b is insufficient to meet the preset protection requirement for the chip after the resin layer 3b is seriously warped due to the overlarge thickness of the gap can be avoided.
Further, as shown in fig. 1, a core silicon wafer layer 5 is further included between the copper pillar layer 100 and the lower mold 1, so that at least part of copper pillars in the copper pillar layer 100 are disposed on the core silicon wafer layer 5. Meanwhile, when an operator places a predetermined amount of resin 3a in advance at the position of the copper pillar layer 100, the resin 3a is placed at the position of a part of the copper pillar on the core silicon wafer layer 5, that is, since the resin 3a is placed on the core silicon wafer layer 5, the resin 3a is extruded and flowed from the position of the core silicon wafer layer 5 to the periphery in the process of clamping the upper die 2 and the lower die 1 until the resin 3a forms a resin layer 3b that completely covers the area of the slit 101 of the entire copper pillar layer 100. Specifically, since the core silicon wafer layer 5 actually occupies a part of the height of the copper pillar layer 100, that is, the total height of the slit 101 of the copper pillar layer 100 at the core silicon wafer layer 5 is smaller and the height of the bottom is higher, the flowable resin 3a is placed in advance in the area of higher level, so that the resin 3a can naturally squeeze and flow from high to low, and the efficiency of covering the flow of the slit 101 is better.
It is noted that in the present embodiment, as shown in fig. 1, the release film 4 is disposed to entirely cover one side of the upper mold 2 toward the lower mold 1, including the side edges of all copper pillar layers 100, the side edges of all resin layers 3b, and the pressing area between the upper mold 2 and the lower mold 1, so that it is possible to avoid the situation that the release film 4 is too small due to insufficient coverage of the release film 4 during the pressing, and the pressing of the resin 3a is not uniform due to the occurrence of offset.
Although various embodiments are described in this disclosure, the present application is not limited to the specific embodiments described in the industry standard or examples, and some industry standard or embodiments modified by the use of custom or embodiment described herein may achieve the same, equivalent or similar results as the embodiments described in the embodiments described above, or as expected after modification. Examples of data acquisition, processing, output, judgment, etc. using these modifications or variations are still within the scope of alternative embodiments of the present application.
Although the present application has been described by way of examples, one of ordinary skill in the art will recognize that there are many variations and modifications of the present application without departing from the spirit of the application, and it is intended that the appended embodiments encompass such variations and modifications without departing from the application.
Claims (10)
1. A packaging method for improving wafer warpage, wherein a copper pillar layer is arranged on a lower die, and the copper pillar layer is provided with a gap; the packaging method for improving wafer warpage is characterized by comprising the following steps:
Placing a preset amount of resin at the copper column layer position;
arranging a release film on one side of an upper die, which faces the lower die;
The method comprises the steps that a preset amount of resin is placed on the copper column layer, and after the release film is arranged on the upper die, the upper die drives the release film to move downwards towards the copper column layer on the lower die, so that the resin is extruded by the release film and then enters a gap of the copper column layer to form a resin layer; at the same time, the release film is embedded into the copper pillar layer, so that the formed resin layer is lower than at least part of the copper pillar layer.
2. The packaging method for improving wafer warpage as claimed in claim 1, wherein: after the step of placing a preset amount of resin on the copper column layer and arranging the release film on the upper die, the upper die drives the release film to move downwards towards the copper column layer on the lower die, so that the resin is extruded by the release film and enters into gaps of the copper column layer to form a resin layer, and the height of the gaps of the copper column layer is equal to the sum of the height of the release film and the height of the resin layer after extrusion, and the upper die stops extrusion and returns.
3. The packaging method for improving wafer warpage as claimed in claim 2, wherein: after the step of "the upper die stops pressing and returns", the resin layer and the copper pillar layer are plane-ground by a grinding wheel at a position lower than the resin layer, so that the resin layer and the copper pillar layer are flush, and the copper pillar layer is exposed outward.
4. A packaging method for improving wafer warpage as claimed in claim 3, wherein: and (3) carrying out plane grinding on the resin layer and the copper pillar layer at a position lower than the resin layer through a grinding wheel, so that after at least part of the copper pillar layer and the resin layer are removed, the grinding wheel stops grinding and returns after the copper pillar layer and the resin layer reach a preset height.
5. The packaging method for improving wafer warpage as claimed in claim 1, wherein: in the step of placing a preset amount of resin on the copper column layer and arranging the release film on the upper die, the upper die drives the release film to move downwards towards the copper column layer on the lower die, so that the resin is extruded by the release film and then enters into a gap of the copper column layer to form a resin layer, the strength of the release film is smaller than that of the copper column layer, the strength of the release film is larger than that of the resin, and the release film is elastically deformed, so that the resin is uniformly extruded by the release film to form the resin layer with uniform height.
6. The packaging method for improving wafer warpage as claimed in claim 5, wherein: the height difference between the gaps of the copper column layer and the resin layer is equal to the thickness of the release film after elastic deformation.
7. The packaging method for improving wafer warpage as claimed in claim 5, wherein: the difference in height between the gaps of the copper pillar layer and the resin layer was 15 μm.
8. The packaging method for improving wafer warpage as claimed in claim 1, wherein: and a core silicon wafer layer is further arranged between the copper column layer and the lower die, so that at least part of copper columns in the copper column layer are arranged on the core silicon wafer layer.
9. The packaging method for improving wafer warpage as claimed in claim 8, wherein: in the step of placing a preset amount of resin on the copper column layer, the resin is placed on the position of a part of copper columns on the core silicon wafer layer.
10. The packaging method for improving wafer warpage as claimed in claim 1, wherein: and the release film completely covers one surface of the upper die, which faces the lower die.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202410924172.1A CN118486601A (en) | 2024-07-11 | 2024-07-11 | A packaging method for improving wafer warpage |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202410924172.1A CN118486601A (en) | 2024-07-11 | 2024-07-11 | A packaging method for improving wafer warpage |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000174046A (en) * | 1998-12-09 | 2000-06-23 | Apic Yamada Corp | Resin sealing method |
| JP2000299334A (en) * | 1999-04-14 | 2000-10-24 | Apic Yamada Corp | Resin-sealing apparatus |
| US6187243B1 (en) * | 1997-07-11 | 2001-02-13 | Apic Yamada Corporation | Method of resin molding |
| KR101375368B1 (en) * | 2012-12-27 | 2014-03-19 | 주식회사 심텍 | Pcb having fine connection pattern layer and method of fabricating the same |
-
2024
- 2024-07-11 CN CN202410924172.1A patent/CN118486601A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6187243B1 (en) * | 1997-07-11 | 2001-02-13 | Apic Yamada Corporation | Method of resin molding |
| JP2000174046A (en) * | 1998-12-09 | 2000-06-23 | Apic Yamada Corp | Resin sealing method |
| JP2000299334A (en) * | 1999-04-14 | 2000-10-24 | Apic Yamada Corp | Resin-sealing apparatus |
| KR101375368B1 (en) * | 2012-12-27 | 2014-03-19 | 주식회사 심텍 | Pcb having fine connection pattern layer and method of fabricating the same |
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