CN118412659A - Wide incident angle frequency selection structure with high pass and steep cut-off - Google Patents
Wide incident angle frequency selection structure with high pass and steep cut-off Download PDFInfo
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Abstract
本发明公开了一种高通、陡截止的宽入射角频率选择结构。结构包括相互垂直穿插布置的第一和第二选择组件,第一和第二选择组件均包括带有切槽的介质基板和介质基板两个表面上的回形导电几何结构和C形导电几何结构,导电几何结构通过导电金属过孔互相连接。本发明能够对5GHz以下、任意极化方向、0~60度宽入射角范围内的空间电磁波实现高通滤波功能,并且通带与阻带之间的过渡带非常窄,具有陡截止效果;本发明还解决了现有技术中通带带宽窄、通带与阻带间过渡带宽以及入射角范围窄的局限性,并且易于加工制作,可被广泛应用于通信基站、雷达、卫星通信以及飞行器等平台的天线罩中。
The present invention discloses a high-pass, steep-cutoff wide-incident-angle frequency selection structure. The structure includes a first and a second selection component arranged vertically interlaced with each other, and the first and the second selection components each include a dielectric substrate with a slot and a meander-shaped conductive geometric structure and a C-shaped conductive geometric structure on the two surfaces of the dielectric substrate, and the conductive geometric structures are interconnected through conductive metal vias. The present invention can realize a high-pass filtering function for space electromagnetic waves below 5 GHz, in any polarization direction, and within a wide incident angle range of 0 to 60 degrees, and the transition band between the passband and the stopband is very narrow, with a steep cutoff effect; the present invention also solves the limitations of the prior art in narrow passband bandwidth, transition bandwidth between passband and stopband, and narrow incident angle range, and is easy to process and manufacture, and can be widely used in antenna covers of communication base stations, radars, satellite communications, and aircraft platforms.
Description
技术领域Technical Field
本发明涉及了一种角频率选择结构,涉及空间滤波技术及天线技术领域,具体涉及一种高通、陡截止的宽入射角频率选择结构。The invention relates to an angular frequency selection structure, to the fields of spatial filtering technology and antenna technology, and in particular to a high-pass, steep-cutoff, wide-incident-angle frequency selection structure.
背景技术Background technique
频率选择结构作为一种空间滤波器,能够根据电磁波的工作频率、极化方式、入射角和能量等对空间电磁波进行选择和调控。区别于传统意义上的滤波器,频率选择结构是无源阵列,其激励源不是电压或电流信号源,而是空间中的电磁波。频率选择结构通常是由金属贴片(或金属屏上的开槽孔径)和介质材料按照一定规律设计构成的人工电磁结构周期阵列,它在谐振频率附近对空间电磁波呈现出全反射或全透射的特性。得益于这种独特的电磁波选择和调控能力,频率选择结构在电磁兼容性、抑制电磁干扰、提升天线系统性能以及实现雷达散射截面积缩减等领域有着广泛的应用。As a spatial filter, the frequency selective structure can select and regulate electromagnetic waves in space according to the operating frequency, polarization mode, incident angle and energy of the electromagnetic waves. Different from the traditional filter, the frequency selective structure is a passive array, and its excitation source is not a voltage or current signal source, but electromagnetic waves in space. The frequency selective structure is usually an artificial electromagnetic structure periodic array composed of metal patches (or slotted apertures on a metal screen) and dielectric materials designed according to certain rules. It exhibits the characteristics of total reflection or total transmission of electromagnetic waves in space near the resonant frequency. Thanks to this unique ability to select and regulate electromagnetic waves, the frequency selective structure has a wide range of applications in electromagnetic compatibility, suppressing electromagnetic interference, improving antenna system performance, and reducing radar scattering cross-sectional area.
通常,在现代通信系统中会集成多频段的天线来增加通信系统的容量,这给频率选择结构的性能带来了很大的挑战,不仅需要超宽通带的频率选择结构来覆盖所有天线的工作频段还要有快速的截止速率和阻带抑制度来抑制带外的干扰。现有的研究成果难以同时实现超宽通带、低频阻带的陡截止和宽入射角性能。因此,如何实现超宽通带、陡截止和宽入射角的频率选择结构是一个亟待解决的问题。Generally, multi-band antennas are integrated in modern communication systems to increase the capacity of the communication system, which poses a great challenge to the performance of the frequency selective structure. Not only does it require an ultra-wide passband frequency selective structure to cover the operating frequency bands of all antennas, but it also requires a fast cutoff rate and stopband suppression to suppress out-of-band interference. Existing research results are difficult to achieve ultra-wide passband, steep cutoff of low-frequency stopband, and wide incident angle performance at the same time. Therefore, how to achieve a frequency selective structure with ultra-wide passband, steep cutoff, and wide incident angle is an urgent problem to be solved.
发明内容Summary of the invention
为了解决背景技术中存在的问题,本发明所提供一种高通、陡截止的宽入射角频率选择结构。以同时实现超宽通带、低频阻带的陡截止和宽入射角性能。本发明能够对5GHz以下、任意极化方向、0~60度宽入射角范围内的空间电磁波实现滤波功能,通带与阻带之间的过渡带非常窄,具有陡截止效果。在现代通信、雷达及军事国防等领域应用价值巨大。In order to solve the problems existing in the background technology, the present invention provides a high-pass, steep-cutoff wide-incident-angle frequency selection structure. It can simultaneously achieve ultra-wide passband, steep cutoff and wide-incident-angle performance of low-frequency stopband. The present invention can filter space electromagnetic waves below 5GHz, in any polarization direction, and within a wide incident angle range of 0 to 60 degrees. The transition band between the passband and the stopband is very narrow, and has a steep cutoff effect. It has great application value in modern communications, radars, military defense and other fields.
本发明采用的技术方案是:The technical solution adopted by the present invention is:
本发明的高通、陡截止的宽入射角频率选择结构包括若干相互均匀间隔平行布置的矩形板状的第一选择组件以及若干相互均匀间隔平行布置的矩形板状的第二选择组件,各个第一选择组件和各个第二选择组件相互正交且垂直穿插布置形成榫卯配合结构;每个第一选择组件的两侧面均沿自身长度方向划分为若干矩形的第一导电几何结构印制区域,每个第一导电几何结构印制区域上均印制有相同的第一导电几何结构;每个第二选择组件的两侧面均沿自身长度方向划分为若干矩形的第二导电几何结构印制区域,每个第二导电几何结构印制区域上均印制有相同的第二导电几何结构;每个第一导电几何结构印制区域穿插在其中两个相邻的第二选择组件之间,每个第二导电几何结构区域穿插在其中两个相邻的第一选择组件之间。The high-pass, steep-cutoff, wide-incident-angle frequency selection structure of the present invention comprises a plurality of rectangular plate-shaped first selection components that are evenly spaced and arranged in parallel with each other, and a plurality of rectangular plate-shaped second selection components that are evenly spaced and arranged in parallel with each other, wherein each first selection component and each second selection component are orthogonal to each other and are vertically interlaced to form a mortise and tenon fitting structure; both side surfaces of each first selection component are divided into a plurality of rectangular first conductive geometric structure printed areas along its own length direction, and each first conductive geometric structure printed area is printed with the same first conductive geometric structure; both side surfaces of each second selection component are divided into a plurality of rectangular second conductive geometric structure printed areas along its own length direction, and each second conductive geometric structure printed area is printed with the same second conductive geometric structure; each first conductive geometric structure printed area is interlaced between two adjacent second selection components, and each second conductive geometric structure area is interlaced between two adjacent first selection components.
所述的第一选择组件为带有若干间隔布置的第一切槽的第一介质基板,第一切槽为贯通第一介质基板的板面的条形通槽且平行于第一介质基板的宽度方向,位于第一介质基板上的每个第一导电几何结构印制区域中均开设有一个第一切槽,每个第一切槽位于相邻的两个第一导电几何结构之间,第一导电几何结构印制区域的长度方向平行于第一介质基板的宽度方向,每个第一切槽自第一导电几何结构印制区域的其中一个短边顶角开设至第一导电几何结构印制区域的长边中心处,第一介质基板的一侧面上的每个第一导电几何结构沿自身所在的第一导电几何结构印制区域的长度方向的中心轴线翻转半周后与正对的另一侧面上的第一导电几何结构重合;各个第一导电几何结构印制区域中的第一导电几何结构和第一切槽在第一介质基板的两侧面均沿第一介质基板的长度方向周期排列。The first selection component is a first dielectric substrate with a plurality of first slots arranged at intervals. The first slots are strip-shaped through slots that penetrate the plate surface of the first dielectric substrate and are parallel to the width direction of the first dielectric substrate. A first slot is provided in each first conductive geometric structure printing area on the first dielectric substrate. Each first slot is located between two adjacent first conductive geometric structures. The length direction of the first conductive geometric structure printing area is parallel to the width direction of the first dielectric substrate. Each first slot is provided from one of the short side vertices of the first conductive geometric structure printing area to the center of the long side of the first conductive geometric structure printing area. Each first conductive geometric structure on one side of the first dielectric substrate is flipped half a circle along the central axis of the length direction of the first conductive geometric structure printing area where it is located, and then overlaps with the first conductive geometric structure on the other side opposite to it. The first conductive geometric structures and the first slots in each first conductive geometric structure printing area are periodically arranged on both sides of the first dielectric substrate along the length direction of the first dielectric substrate.
所述的第二选择组件为带有若干间隔布置的第二切槽的第二介质基板,第二切槽为贯通第二介质基板的板面的条形通槽且平行于第二介质基板的宽度方向,位于第二介质基板上的每个第二导电几何结构印制区域中均开设有一个第二切槽,每个第二切槽位于相邻的两个第二导电几何结构之间,第二导电几何结构印制区域的长度方向平行于第二介质基板的宽度方向,每个第二切槽自第二导电几何结构印制区域的其中一个短边顶角开设至第二导电几何结构印制区域的长边中心处,第二介质基板的一侧面上的每个第二导电几何结构沿自身所在的第二导电几何结构印制区域的长度方向的中心轴线翻转半周后与正对的另一侧面上的第二导电几何结构重合;各个第二导电几何结构印制区域中的第二导电几何结构和第二切槽在第二介质基板的两侧面均沿第二介质基板的长度方向周期排列。The second selection component is a second dielectric substrate with a plurality of second slots arranged at intervals, the second slots are strip-shaped through slots penetrating the plate surface of the second dielectric substrate and parallel to the width direction of the second dielectric substrate, a second slot is provided in each second conductive geometric structure printing area on the second dielectric substrate, each second slot is located between two adjacent second conductive geometric structures, the length direction of the second conductive geometric structure printing area is parallel to the width direction of the second dielectric substrate, each second slot is opened from one of the short side vertices of the second conductive geometric structure printing area to the center of the long side of the second conductive geometric structure printing area, each second conductive geometric structure on one side of the second dielectric substrate is flipped half a circle along the central axis of the length direction of the second conductive geometric structure printing area where it is located, and then overlaps with the second conductive geometric structure on the other side opposite to it; the second conductive geometric structures and second slots in each second conductive geometric structure printing area are periodically arranged along the length direction of the second dielectric substrate on both sides of the second dielectric substrate.
每个第一选择组件和各个第二选择组件相互正交时,每个第一选择组件上的各个第一切槽依次和各个第二选择组件上的一个第二切槽相互垂直穿插,每个第二选择组件和各个第一选择组件相互正交时,每个第二选择组件上的各个第二切槽依次和各个第一选择组件上的一个第一切槽相互垂直穿插。When each first selection component and each second selection component are orthogonal to each other, each first groove on each first selection component is interlaced perpendicularly with a second groove on each second selection component in turn. When each second selection component and each first selection component are orthogonal to each other, each second groove on each second selection component is interlaced perpendicularly with a first groove on each first selection component in turn.
所述的第一导电几何结构包括回形螺旋导电几何结构和C形导电几何结构,在第一介质基板的两侧面上的第一导电几何结构印制区域两两正对,第一介质基板的其中一侧面上的第一导电几何结构印制区域上印制有第一回形螺旋导电几何结构和第一C形导电几何结构,第一介质基板的另一侧面上的第一导电几何结构印制区域上印制有第二回形螺旋导电几何结构和第二C形导电几何结构。The first conductive geometric structure includes a meandering spiral conductive geometric structure and a C-shaped conductive geometric structure. The first conductive geometric structure printing areas on both side surfaces of the first dielectric substrate are opposite to each other. The first conductive geometric structure printing area on one side surface of the first dielectric substrate is printed with the first meandering spiral conductive geometric structure and the first C-shaped conductive geometric structure, and the first conductive geometric structure printing area on the other side surface of the first dielectric substrate is printed with the second meandering spiral conductive geometric structure and the second C-shaped conductive geometric structure.
C形导电几何结构由两侧较宽的矩形片状导电结构和中间较窄的矩形条片状导电结构一体成型从而形成三段直角弯折C形结构,C形导电几何结构的两侧的矩形片状导电结构的宽度方向以及中间的矩形条片状导电结构的长度方向均平行于第一导电几何结构印制区域的长度方向,矩形条片状导电结构靠近第一导电几何结构印制区域的一侧长边且位于远离自身所在的第一导电几何结构印制区域中的第一切槽的一侧;C形导电几何结构的两侧的矩形片状导电结构上均开设有直角弯折蛇形开槽,直角弯折蛇形开槽的两端开口均位于第一导电几何结构印制区域的长度方向的对称轴线上,C形导电几何结构的四个顶角连接形成矩形且依次开设有贯通第一介质基板的板面的导电金属过孔,第五导电金属过孔和第六导电金属过孔位于相邻的两个第一切槽之间,第一介质基板两侧面上的C形导电几何结构通过导电金属过孔连通。The C-shaped conductive geometric structure is formed by a rectangular sheet-like conductive structure with wider widths on both sides and a rectangular strip-like conductive structure with narrower widths in the middle, thereby forming a three-section right-angle bent C-shaped structure. The width direction of the rectangular sheet-like conductive structures on both sides of the C-shaped conductive geometric structure and the length direction of the rectangular strip-like conductive structure in the middle are both parallel to the length direction of the first conductive geometric structure printing area. The rectangular strip-like conductive structure is close to one side of the long side of the first conductive geometric structure printing area and is located on the side of the first slot in the first conductive geometric structure printing area away from itself. The rectangular sheet-like conductive structures on both sides of the C-shaped conductive geometric structure are provided with right-angle bent serpentine slots, and the openings at both ends of the right-angle bent serpentine slots are both located on the symmetry axis in the length direction of the first conductive geometric structure printing area. The four vertices of the C-shaped conductive geometric structure are connected to form a rectangle and are provided with conductive metal vias that penetrate the board surface of the first dielectric substrate in sequence. The fifth conductive metal via and the sixth conductive metal via are located between two adjacent first slots. The C-shaped conductive geometric structures on both sides of the first dielectric substrate are connected through the conductive metal vias.
回形螺旋导电几何结构位于C形导电几何结构的中间,回形螺旋导电几何结构的一端位于自身所在的第一导电几何结构印制区域的第一切槽的长度方向的中心轴线上且靠近第一切槽,回形螺旋导电几何结构的另一端位于第一导电几何结构印制区域的中心,回形螺旋导电几何结构的一端首先沿第一导电几何结构印制区域的宽度方向印制后朝靠近第一切槽的方向直角弯折,然后呈直角螺旋状印制至另一端,回形螺旋导电几何结构的两端分别开设有贯通第一介质基板的板面的导电金属过孔,第一导电金属过孔位于第一导电几何结构印制区域的中心,第一介质基板两侧面上的回形螺旋导电几何结构通过第一导电金属过孔连通,第二导电金属过孔靠近第一切槽,第一介质基板一侧面上的第一回形螺旋导电几何结构和第一介质基板另一侧面上的与其不正对但相邻的一个第二回形螺旋导电几何结构通过第二导电金属过孔连通。The meandering spiral conductive geometric structure is located in the middle of the C-shaped conductive geometric structure, one end of the meandering spiral conductive geometric structure is located on the central axis of the length direction of the first slot of the first conductive geometric structure printing area where the meandering spiral conductive geometric structure is located and is close to the first slot, the other end of the meandering spiral conductive geometric structure is located at the center of the first conductive geometric structure printing area, one end of the meandering spiral conductive geometric structure is first printed along the width direction of the first conductive geometric structure printing area, then bent at a right angle toward the direction close to the first slot, and then printed in a right-angle spiral shape to the other end, and the two ends of the meandering spiral conductive geometric structure are respectively provided with conductive metal vias that penetrate the board surface of the first dielectric substrate, the first conductive metal via is located in the center of the first conductive geometric structure printing area, the meandering spiral conductive geometric structures on both sides of the first dielectric substrate are connected through the first conductive metal via, the second conductive metal via is close to the first slot, and the first meandering spiral conductive geometric structure on one side of the first dielectric substrate and a second meandering spiral conductive geometric structure that is not directly opposite to it but adjacent to it on the other side of the first dielectric substrate are connected through the second conductive metal via.
所述的第二导电几何结构包括回形螺旋导电几何结构和C形导电几何结构,在第二介质基板的两侧面上的第二导电几何结构印制区域两两正对,第二介质基板的其中一侧面上的第二导电几何结构印制区域上印制有第三回形螺旋导电几何结构和第三C形导电几何结构,第二介质基板的另一侧面上的第二导电几何结构印制区域上印制有第四回形螺旋导电几何结构和第四C形导电几何结构。The second conductive geometric structure includes a meandering spiral conductive geometric structure and a C-shaped conductive geometric structure. The second conductive geometric structure printing areas on both side surfaces of the second dielectric substrate are opposite to each other. A third meandering spiral conductive geometric structure and a third C-shaped conductive geometric structure are printed on the second conductive geometric structure printing area on one side surface of the second dielectric substrate. A fourth meandering spiral conductive geometric structure and a fourth C-shaped conductive geometric structure are printed on the second conductive geometric structure printing area on the other side surface of the second dielectric substrate.
C形导电几何结构由两侧较宽的矩形片状导电结构和中间较窄的矩形条片状导电结构一体成型从而形成三段直角弯折C形结构,C形导电几何结构的两侧的矩形片状导电结构的宽度方向以及中间的矩形条片状导电结构的长度方向均平行于第二导电几何结构印制区域的长度方向,矩形条片状导电结构靠近第二导电几何结构印制区域的一侧长边且位于远离自身所在的第二导电几何结构印制区域中的第二切槽的一侧;C形导电几何结构的两侧的矩形片状导电结构上均开设有直角弯折蛇形开槽,直角弯折蛇形开槽的两端开口均位于第二导电几何结构印制区域的长度方向的对称轴线上,C形导电几何结构的四个顶角连接形成矩形且依次开设有贯通第二介质基板的板面的导电金属过孔,第九导电金属过孔和第十导电金属过孔位于相邻的两个第二切槽之间,第二介质基板两侧面上的C形导电几何结构通过导电金属过孔连通。The C-shaped conductive geometric structure is formed by a rectangular sheet-like conductive structure with wider widths on both sides and a rectangular strip-like conductive structure with narrower widths in the middle, thereby forming a three-section right-angle bent C-shaped structure. The width direction of the rectangular sheet-like conductive structures on both sides of the C-shaped conductive geometric structure and the length direction of the rectangular strip-like conductive structure in the middle are both parallel to the length direction of the second conductive geometric structure printing area. The rectangular strip-like conductive structure is close to one long side of the second conductive geometric structure printing area and is located on the side of the second slot in the second conductive geometric structure printing area away from itself. The rectangular sheet-like conductive structures on both sides of the C-shaped conductive geometric structure are provided with right-angle bent serpentine slots, and the openings at both ends of the right-angle bent serpentine slots are both located on the symmetry axis in the length direction of the second conductive geometric structure printing area. The four vertices of the C-shaped conductive geometric structure are connected to form a rectangle and are provided with conductive metal vias that penetrate the board surface of the second dielectric substrate in sequence. The ninth conductive metal via and the tenth conductive metal via are located between two adjacent second slots. The C-shaped conductive geometric structures on both sides of the second dielectric substrate are connected through the conductive metal vias.
回形螺旋导电几何结构位于C形导电几何结构的中间,回形螺旋导电几何结构的一端位于自身所在的第二导电几何结构印制区域的第二切槽的长度方向的中心轴线上且靠近第二切槽,回形螺旋导电几何结构的另一端位于第二导电几何结构印制区域的中心,回形螺旋导电几何结构的一端首先沿第二导电几何结构印制区域的宽度方向印制后朝靠近第二切槽的方向直角弯折,然后呈直角螺旋状印制至另一端,回形螺旋导电几何结构的两端分别开设有贯通第二介质基板的板面的导电金属过孔,第七导电金属过孔位于第二导电几何结构印制区域的中心,第二介质基板两侧面上的回形螺旋导电几何结构通过第七导电金属过孔连通,第八导电金属过孔靠近第二切槽,第二介质基板一侧面上的第三回形螺旋导电几何结构和第二介质基板另一侧面上的与其不正对但相邻的一个第四回形螺旋导电几何结构通过第八导电金属过孔连通。The meandering spiral conductive geometric structure is located in the middle of the C-shaped conductive geometric structure, one end of the meandering spiral conductive geometric structure is located on the central axis of the length direction of the second groove of the second conductive geometric structure printing area where the meandering spiral conductive geometric structure is located and is close to the second groove, the other end of the meandering spiral conductive geometric structure is located at the center of the second conductive geometric structure printing area, one end of the meandering spiral conductive geometric structure is first printed along the width direction of the second conductive geometric structure printing area, then bent at a right angle in the direction close to the second groove, and then printed in a right-angle spiral shape to the other end, and both ends of the meandering spiral conductive geometric structure are respectively provided with conductive metal vias that penetrate the board surface of the second dielectric substrate, the seventh conductive metal via is located in the center of the second conductive geometric structure printing area, the meandering spiral conductive geometric structures on both sides of the second dielectric substrate are connected through the seventh conductive metal via, the eighth conductive metal via is close to the second groove, and the third meandering spiral conductive geometric structure on one side of the second dielectric substrate and a fourth meandering spiral conductive geometric structure that is not directly opposite to it but adjacent to it on the other side of the second dielectric substrate are connected through the eighth conductive metal via.
所述的第一介质基板的第一切槽和第二介质基板的第二切槽相互穿插时,第一介质基板上的第二导电金属过孔和第二介质基板上的第八导电金属过孔分别位于介质基板的宽度边的中心点的两侧。When the first slot of the first dielectric substrate and the second slot of the second dielectric substrate intersect each other, the second conductive metal via on the first dielectric substrate and the eighth conductive metal via on the second dielectric substrate are respectively located on both sides of the center point of the width side of the dielectric substrate.
所述的第一介质基板的第一切槽和第二介质基板的第二切槽的长度为介质基板总宽度的1/2,第一切槽和第二切槽的宽度略宽于介质基板的厚度。The length of the first slot of the first dielectric substrate and the second slot of the second dielectric substrate is 1/2 of the total width of the dielectric substrate, and the width of the first slot and the second slot is slightly wider than the thickness of the dielectric substrate.
所述的回形螺旋导电几何结构的螺旋圈数为1.25圈~1.5圈。The number of spiral turns of the meandering spiral conductive geometric structure is 1.25 to 1.5 turns.
所述的C形导电几何结构的蛇形开槽的弯折次数为2次。The serpentine slot of the C-shaped conductive geometric structure has two bending times.
本发明的高通、陡截止的宽入射角频率选择结构的应用:所述的高通、陡截止的宽入射角频率选择结构在天线罩中的应用。Application of the high-pass, steep-cutoff, wide-incident-angle frequency selection structure of the present invention: Application of the high-pass, steep-cutoff, wide-incident-angle frequency selection structure in a radome.
本发明的高通、陡截止的宽入射角频率选择结构的应用:所述的高通、陡截止的宽入射角频率选择结构在天线系统中提高天线间隔离度的装置中的应用。Application of the high-pass, steep-cutoff, wide-incident-angle frequency selection structure of the present invention: Application of the high-pass, steep-cutoff, wide-incident-angle frequency selection structure in a device for improving isolation between antennas in an antenna system.
本发明的有益效果是:The beneficial effects of the present invention are:
本发明能够对5GHz以下、任意极化方向、0~60度宽入射角范围内的空间电磁波实现高通滤波功能,并且通带与阻带之间的过渡带非常窄,在小于2dB插入损耗条件下通带相对分数带宽高达93.3%,在13dB抑制度条件下通带与阻带之间的过渡带仅有0.13GHz,具有陡截止效果;本发明还解决了现有技术中通带带宽窄、通带与阻带间过渡带宽以及入射角范围窄的局限性,并且易于加工制作,可被广泛应用于通信基站、雷达、卫星通信以及飞行器等平台的天线罩中。The present invention can realize high-pass filtering function for space electromagnetic waves below 5GHz, in any polarization direction and within a wide incident angle range of 0 to 60 degrees, and the transition band between the passband and the stopband is very narrow. Under the condition of less than 2dB insertion loss, the relative fractional bandwidth of the passband is as high as 93.3%, and under the condition of 13dB suppression, the transition band between the passband and the stopband is only 0.13GHz, which has a steep cutoff effect. The present invention also solves the limitations of the prior art of narrow passband bandwidth, transition bandwidth between passband and stopband, and narrow incident angle range, and is easy to process and manufacture, and can be widely used in antenna covers of communication base stations, radars, satellite communications, and aircraft platforms.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1为本发明提供的高通、陡截止的宽入射角频率选择结构的三维示意图;FIG1 is a three-dimensional schematic diagram of a high-pass, steep-cutoff, wide-incident-angle frequency selection structure provided by the present invention;
图2为高通、陡截止的宽入射角频率选择结构中第一选择组件A面的部分结构示意图;FIG2 is a partial structural schematic diagram of the A surface of the first selection component in the high-pass, steep-cutoff wide-incident-angle frequency selection structure;
图3为高通、陡截止的宽入射角频率选择结构中第一选择组件B面的部分结构示意图;FIG3 is a partial structural diagram of the first selection component B surface in the high-pass, steep-cutoff wide-incident-angle frequency selection structure;
图4为高通、陡截止的宽入射角频率选择结构中第二选择组件A面的部分结构示意图;FIG4 is a partial structural diagram of the A surface of the second selection component in the high-pass, steep-cutoff wide-incident-angle frequency selection structure;
图5为高通、陡截止的宽入射角频率选择结构中第二选择组件B面的部分结构示意图;FIG5 is a partial structural diagram of the second selection component B surface in the high-pass, steep-cutoff wide-incident-angle frequency selection structure;
图6为高通、陡截止的宽入射角频率选择结构优选实施例在电磁波入射角为0°、30°、60°时的横电TE(Transverse Electric)模式下的传输系数示意图;FIG6 is a schematic diagram of the transmission coefficient of a preferred embodiment of a high-pass, steep-cutoff wide-incident-angle frequency selection structure under a transverse electric (TE) mode when the electromagnetic wave incident angles are 0°, 30°, and 60°;
图7为高通、陡截止的宽入射角频率选择结构优选实施例在电磁波入射角为0°、30°、60°时的横磁TM(Transverse Magnetic)模式下的传输系数示意图;FIG7 is a schematic diagram of the transmission coefficient of a preferred embodiment of a high-pass, steep-cutoff wide-incident-angle frequency selection structure in a transverse magnetic (TM) mode when the electromagnetic wave incident angles are 0°, 30°, and 60°;
图中:第一选择组件10、第一介质基板11、第一回形螺旋导电几何结构1A2、第二回形螺旋导电几何结构1B2、第一C形导电几何结构1A3、第二C形导电几何结构1B3、第一导电金属过孔14、第二导电金属过孔15、第三导电金属过孔16、第四导电金属过孔17、第五导电金属过孔18、第六导电金属过孔19、第二选择组件20、第二介质基板21、第三回形螺旋导电几何结构2A2、第四回形螺旋导电几何结构2B2、第三C形导电几何结构2A3、第四C形导电几何结构2B3、第七导电金属过孔24、第八导电金属过孔25、第九导电金属过孔26、第十导电金属过孔27、第十一导电金属过孔28、第十二导电金属过孔29。In the figure: a first selection component 10, a first dielectric substrate 11, a first meander spiral conductive geometric structure 1A2, a second meander spiral conductive geometric structure 1B2, a first C-shaped conductive geometric structure 1A3, a second C-shaped conductive geometric structure 1B3, a first conductive metal via 14, a second conductive metal via 15, a third conductive metal via 16, a fourth conductive metal via 17, a fifth conductive metal via 18, a sixth conductive metal via 19, a second selection component 20, a second dielectric substrate 21, a third meander spiral conductive geometric structure 2A2, a fourth meander spiral conductive geometric structure 2B2, a third C-shaped conductive geometric structure 2A3, a fourth C-shaped conductive geometric structure 2B3, a seventh conductive metal via 24, an eighth conductive metal via 25, a ninth conductive metal via 26, a tenth conductive metal via 27, an eleventh conductive metal via 28, and a twelfth conductive metal via 29.
具体实施方式Detailed ways
下面结合附图及具体实施例对本发明作进一步详细说明。The present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.
如图1所示,本发明的高通、陡截止的宽入射角频率选择结构包括若干相互均匀间隔平行布置的矩形板状的第一选择组件10以及若干相互均匀间隔平行布置的矩形板状的第二选择组件20,各个第一选择组件10和各个第二选择组件20相互正交且垂直穿插布置形成榫卯配合结构;每个第一选择组件10的两侧面均沿自身长度方向划分为若干矩形的第一导电几何结构印制区域,每个第一导电几何结构印制区域上均印制有相同的第一导电几何结构;每个第二选择组件20的两侧面均沿自身长度方向划分为若干矩形的第二导电几何结构印制区域,每个第二导电几何结构印制区域上均印制有相同的第二导电几何结构;每个第一导电几何结构印制区域穿插在其中两个相邻的第二选择组件20之间,每个第二导电几何结构区域穿插在其中两个相邻的第一选择组件10之间。As shown in FIG1 , the high-pass, steep-cutoff, wide-incident-angle frequency selection structure of the present invention comprises a plurality of rectangular plate-shaped first selection components 10 evenly spaced and arranged in parallel with each other, and a plurality of rectangular plate-shaped second selection components 20 evenly spaced and arranged in parallel with each other, each first selection component 10 and each second selection component 20 being orthogonal to each other and vertically interlaced to form a mortise and tenon joint structure; both side surfaces of each first selection component 10 are divided into a plurality of rectangular first conductive geometric structure printed areas along its own length direction, and each first conductive geometric structure printed area is printed with the same first conductive geometric structure; both side surfaces of each second selection component 20 are divided into a plurality of rectangular second conductive geometric structure printed areas along its own length direction, and each second conductive geometric structure printed area is printed with the same second conductive geometric structure; each first conductive geometric structure printed area is interlaced between two adjacent second selection components 20, and each second conductive geometric structure area is interlaced between two adjacent first selection components 10.
第一选择组件10为带有若干间隔布置的第一切槽的第一介质基板11,第一切槽为贯通第一介质基板11的板面的条形通槽且平行于第一介质基板11的宽度方向,位于第一介质基板11上的每个第一导电几何结构印制区域中均开设有一个第一切槽,每个第一切槽位于相邻的两个第一导电几何结构之间,第一导电几何结构印制区域的长度方向平行于第一介质基板11的宽度方向,每个第一切槽自第一导电几何结构印制区域的其中一个短边顶角开设至第一导电几何结构印制区域的长边中心处,第一介质基板11的一侧面上的每个第一导电几何结构沿自身所在的第一导电几何结构印制区域的长度方向的中心轴线翻转半周后与正对的另一侧面上的第一导电几何结构重合;各个第一导电几何结构印制区域中的第一导电几何结构和第一切槽在第一介质基板11的两侧面均沿第一介质基板11的长度方向周期排列。The first selection component 10 is a first dielectric substrate 11 with a plurality of first slots arranged at intervals. The first slots are strip-shaped through slots penetrating the plate surface of the first dielectric substrate 11 and are parallel to the width direction of the first dielectric substrate 11. A first slot is provided in each first conductive geometric structure printing area on the first dielectric substrate 11. Each first slot is located between two adjacent first conductive geometric structures. The length direction of the first conductive geometric structure printing area is parallel to the width direction of the first dielectric substrate 11. Each first slot is provided from one of the short side vertices of the first conductive geometric structure printing area to the center of the long side of the first conductive geometric structure printing area. Each first conductive geometric structure on one side of the first dielectric substrate 11 is flipped half a circle along the central axis of the length direction of the first conductive geometric structure printing area where it is located, and then overlaps with the first conductive geometric structure on the other side opposite to it. The first conductive geometric structures and the first slots in each first conductive geometric structure printing area are periodically arranged along the length direction of the first dielectric substrate 11 on both sides of the first dielectric substrate 11.
第二选择组件20为带有若干间隔布置的第二切槽的第二介质基板21,第二切槽为贯通第二介质基板21的板面的条形通槽且平行于第二介质基板21的宽度方向,位于第二介质基板21上的每个第二导电几何结构印制区域中均开设有一个第二切槽,每个第二切槽位于相邻的两个第二导电几何结构之间,第二导电几何结构印制区域的长度方向平行于第二介质基板21的宽度方向,每个第二切槽自第二导电几何结构印制区域的其中一个短边顶角开设至第二导电几何结构印制区域的长边中心处,第二介质基板21的一侧面上的每个第二导电几何结构沿自身所在的第二导电几何结构印制区域的长度方向的中心轴线翻转半周后与正对的另一侧面上的第二导电几何结构重合;各个第二导电几何结构印制区域中的第二导电几何结构和第二切槽在第二介质基板21的两侧面均沿第二介质基板21的长度方向周期排列。The second selection component 20 is a second dielectric substrate 21 with a plurality of second slots arranged at intervals. The second slots are strip-shaped through slots penetrating the plate surface of the second dielectric substrate 21 and are parallel to the width direction of the second dielectric substrate 21. A second slot is provided in each second conductive geometric structure printing area on the second dielectric substrate 21. Each second slot is located between two adjacent second conductive geometric structures. The length direction of the second conductive geometric structure printing area is parallel to the width direction of the second dielectric substrate 21. Each second slot is provided from one of the short side vertices of the second conductive geometric structure printing area to the center of the long side of the second conductive geometric structure printing area. Each second conductive geometric structure on one side of the second dielectric substrate 21 is flipped half a circle along the central axis of the length direction of the second conductive geometric structure printing area where it is located, and then overlaps with the second conductive geometric structure on the other side opposite to it. The second conductive geometric structures and second slots in each second conductive geometric structure printing area are periodically arranged along the length direction of the second dielectric substrate 21 on both sides of the second dielectric substrate 21.
每个第一选择组件10和各个第二选择组件20相互正交时,每个第一选择组件10上的各个第一切槽依次和各个第二选择组件20上的一个第二切槽相互垂直穿插,每个第二选择组件20和各个第一选择组件10相互正交时,每个第二选择组件20上的各个第二切槽依次和各个第一选择组件10上的一个第一切槽相互垂直穿插。When each first selection component 10 and each second selection component 20 are orthogonal to each other, each first groove on each first selection component 10 is interlaced vertically with a second groove on each second selection component 20 in turn. When each second selection component 20 and each first selection component 10 are orthogonal to each other, each second groove on each second selection component 20 is interlaced vertically with a first groove on each first selection component 10 in turn.
如图2和图3所示,第一导电几何结构包括回形螺旋导电几何结构1A2、1B2和C形导电几何结构1A3、1B3,在第一介质基板11的两侧面上的第一导电几何结构印制区域两两正对,第一介质基板11的其中一侧面上的第一导电几何结构印制区域上印制有第一回形螺旋导电几何结构1A2和第一C形导电几何结构1A3,第一介质基板11的另一侧面上的第一导电几何结构印制区域上印制有第二回形螺旋导电几何结构1B2和第二C形导电几何结构1B3。As shown in FIGS. 2 and 3 , the first conductive geometric structure includes meandering spiral conductive geometric structures 1A2 and 1B2 and C-shaped conductive geometric structures 1A3 and 1B3. The first conductive geometric structure printing areas on both sides of the first dielectric substrate 11 are opposite to each other. The first conductive geometric structure printing area on one side of the first dielectric substrate 11 is printed with the first meandering spiral conductive geometric structure 1A2 and the first C-shaped conductive geometric structure 1A3. The first conductive geometric structure printing area on the other side of the first dielectric substrate 11 is printed with the second meandering spiral conductive geometric structure 1B2 and the second C-shaped conductive geometric structure 1B3.
C形导电几何结构1A3、1B3由两侧较宽的矩形片状导电结构和中间较窄的矩形条片状导电结构一体成型从而形成三段直角弯折C形结构,C形导电几何结构1A3、1B3的两侧的矩形片状导电结构的宽度方向以及中间的矩形条片状导电结构的长度方向均平行于第一导电几何结构印制区域的长度方向,矩形条片状导电结构靠近第一导电几何结构印制区域的一侧长边且位于远离自身所在的第一导电几何结构印制区域中的第一切槽的一侧;C形导电几何结构1A3、1B3的两侧的矩形片状导电结构上均开设有直角弯折蛇形开槽,直角弯折蛇形开槽的两端开口均位于第一导电几何结构印制区域的长度方向的对称轴线上,C形导电几何结构1A3、1B3的四个顶角连接形成矩形且依次开设有贯通第一介质基板11的板面的导电金属过孔16、17、18、19,第五导电金属过孔18和第六导电金属过孔19位于相邻的两个第一切槽之间,第一介质基板11两侧面上的C形导电几何结构1A3、1B3通过导电金属过孔16、17、18、19连通。The C-shaped conductive geometric structures 1A3 and 1B3 are formed by integrating the wider rectangular sheet-like conductive structures on both sides and the narrower rectangular strip-like conductive structures in the middle to form three right-angle bent C-shaped structures. The width direction of the rectangular sheet-like conductive structures on both sides of the C-shaped conductive geometric structures 1A3 and 1B3 and the length direction of the rectangular strip-like conductive structures in the middle are parallel to the length direction of the first conductive geometric structure printed area. The rectangular strip-like conductive structures are close to the long side of one side of the first conductive geometric structure printed area and are located on the side away from the first slot in the first conductive geometric structure printed area where they are located. The two sides of the C-shaped conductive geometric structures 1A3 and 1B3 The rectangular sheet-like conductive structures on the sides are provided with right-angle bent serpentine grooves, and the openings at both ends of the right-angle bent serpentine grooves are both located on the symmetry axis in the length direction of the first conductive geometric structure printing area. The four vertices of the C-shaped conductive geometric structures 1A3 and 1B3 are connected to form a rectangle and are sequentially provided with conductive metal vias 16, 17, 18, and 19 that pass through the board surface of the first dielectric substrate 11. The fifth conductive metal via 18 and the sixth conductive metal via 19 are located between two adjacent first grooves. The C-shaped conductive geometric structures 1A3 and 1B3 on both sides of the first dielectric substrate 11 are connected through the conductive metal vias 16, 17, 18, and 19.
回形螺旋导电几何结构1A2、1B2位于C形导电几何结构1A3、1B3的中间,回形螺旋导电几何结构1A2、1B2的一端位于自身所在的第一导电几何结构印制区域的第一切槽的长度方向的中心轴线上且靠近第一切槽,回形螺旋导电几何结构1A2、1B2的另一端位于第一导电几何结构印制区域的中心,回形螺旋导电几何结构1A2、1B2的一端首先沿第一导电几何结构印制区域的宽度方向印制后朝靠近第一切槽的方向直角弯折,然后呈直角螺旋状印制至另一端,回形螺旋导电几何结构1A2、1B2的两端分别开设有贯通第一介质基板11的板面的导电金属过孔14、15,第一导电金属过孔14位于第一导电几何结构印制区域的中心,第一介质基板11两侧面上的回形螺旋导电几何结构1A2、1B2通过第一导电金属过孔14连通,第二导电金属过孔15靠近第一切槽,第一介质基板11一侧面上的第一回形螺旋导电几何结构1A2和第一介质基板11另一侧面上的与其不正对但相邻的一个第二回形螺旋导电几何结构1B2通过第二导电金属过孔15连通。The meandering spiral conductive geometric structures 1A2 and 1B2 are located in the middle of the C-shaped conductive geometric structures 1A3 and 1B3. One end of the meandering spiral conductive geometric structures 1A2 and 1B2 is located on the central axis of the length direction of the first groove of the first conductive geometric structure printing area where the meandering spiral conductive geometric structures 1A2 and 1B2 are located and close to the first groove. The other end of the meandering spiral conductive geometric structures 1A2 and 1B2 is located in the center of the first conductive geometric structure printing area. One end of the meandering spiral conductive geometric structures 1A2 and 1B2 is first printed along the width direction of the first conductive geometric structure printing area, then bent at a right angle toward the direction close to the first groove, and then printed in a right-angle spiral shape to the other end. Conductive metal vias 14 and 15 penetrating the surface of the first dielectric substrate 11 are respectively provided at both ends of the geometric structures 1A2 and 1B2. The first conductive metal via 14 is located at the center of the first conductive geometric structure printing area. The meandering spiral conductive geometric structures 1A2 and 1B2 on both sides of the first dielectric substrate 11 are connected through the first conductive metal via 14. The second conductive metal via 15 is close to the first slot. The first meandering spiral conductive geometric structure 1A2 on one side of the first dielectric substrate 11 and a second meandering spiral conductive geometric structure 1B2 on the other side of the first dielectric substrate 11 that is not directly opposite to it but adjacent to it are connected through the second conductive metal via 15.
如图4和图5所示,第二导电几何结构包括回形螺旋导电几何结构2A2、2B2和C形导电几何结构2A3、2B3,在第二介质基板21的两侧面上的第二导电几何结构印制区域两两正对,第二介质基板21的其中一侧面上的第二导电几何结构印制区域上印制有第三回形螺旋导电几何结构2A2和第三C形导电几何结构2A3,第二介质基板21的另一侧面上的第二导电几何结构印制区域上印制有第四回形螺旋导电几何结构2B2和第四C形导电几何结构2B3。As shown in Figures 4 and 5, the second conductive geometric structure includes meandering spiral conductive geometric structures 2A2, 2B2 and C-shaped conductive geometric structures 2A3, 2B3. The second conductive geometric structure printing areas on both sides of the second dielectric substrate 21 are opposite to each other. The third meandering spiral conductive geometric structure 2A2 and the third C-shaped conductive geometric structure 2A3 are printed on the second conductive geometric structure printing area on one side of the second dielectric substrate 21, and the fourth meandering spiral conductive geometric structure 2B2 and the fourth C-shaped conductive geometric structure 2B3 are printed on the second conductive geometric structure printing area on the other side of the second dielectric substrate 21.
C形导电几何结构2A3、2B3由两侧较宽的矩形片状导电结构和中间较窄的矩形条片状导电结构一体成型从而形成三段直角弯折C形结构,C形导电几何结构2A3、2B3的两侧的矩形片状导电结构的宽度方向以及中间的矩形条片状导电结构的长度方向均平行于第二导电几何结构印制区域的长度方向,矩形条片状导电结构靠近第二导电几何结构印制区域的一侧长边且位于远离自身所在的第二导电几何结构印制区域中的第二切槽的一侧;C形导电几何结构2A3、2B3的两侧的矩形片状导电结构上均开设有直角弯折蛇形开槽,直角弯折蛇形开槽的两端开口均位于第二导电几何结构印制区域的长度方向的对称轴线上,C形导电几何结构2A3、2B3的四个顶角连接形成矩形且依次开设有贯通第二介质基板21的板面的导电金属过孔26、27、28、29,第九导电金属过孔26和第十导电金属过孔27位于相邻的两个第二切槽之间,第二介质基板21两侧面上的C形导电几何结构2A3、2B3通过导电金属过孔26、27、28、29连通。The C-shaped conductive geometric structures 2A3 and 2B3 are formed by integrating the wider rectangular sheet-like conductive structures on both sides and the narrower rectangular strip-like conductive structures in the middle to form three right-angle bent C-shaped structures. The width direction of the rectangular sheet-like conductive structures on both sides of the C-shaped conductive geometric structures 2A3 and 2B3 and the length direction of the rectangular strip-like conductive structures in the middle are parallel to the length direction of the second conductive geometric structure printed area. The rectangular strip-like conductive structures are close to the long side of one side of the second conductive geometric structure printed area and are located on the side away from the second groove in the second conductive geometric structure printed area where they are located. The two sides of the C-shaped conductive geometric structures 2A3 and 2B3 The rectangular sheet-like conductive structures on the sides are provided with right-angle bent serpentine grooves, and the openings at both ends of the right-angle bent serpentine grooves are both located on the symmetry axis in the length direction of the second conductive geometric structure printing area. The four vertices of the C-shaped conductive geometric structures 2A3 and 2B3 are connected to form a rectangle and are sequentially provided with conductive metal vias 26, 27, 28, and 29 that penetrate the plate surface of the second dielectric substrate 21. The ninth conductive metal via 26 and the tenth conductive metal via 27 are located between two adjacent second grooves. The C-shaped conductive geometric structures 2A3 and 2B3 on both sides of the second dielectric substrate 21 are connected through the conductive metal vias 26, 27, 28, and 29.
回形螺旋导电几何结构2A2、2B2位于C形导电几何结构2A3、2B3的中间,回形螺旋导电几何结构2A2、2B2的一端位于自身所在的第二导电几何结构印制区域的第二切槽的长度方向的中心轴线上且靠近第二切槽,回形螺旋导电几何结构2A2、2B2的另一端位于第二导电几何结构印制区域的中心,回形螺旋导电几何结构2A2、2B2的一端首先沿第二导电几何结构印制区域的宽度方向印制后朝靠近第二切槽的方向直角弯折,然后呈直角螺旋状印制至另一端,回形螺旋导电几何结构2A2、2B2的两端分别开设有贯通第二介质基板21的板面的导电金属过孔24、25,第七导电金属过孔24位于第二导电几何结构印制区域的中心,第二介质基板21两侧面上的回形螺旋导电几何结构2A2、2B2通过第七导电金属过孔24连通,第八导电金属过孔25靠近第二切槽,第二介质基板21一侧面上的第三回形螺旋导电几何结构2A2和第二介质基板21另一侧面上的与其不正对但相邻的一个第四回形螺旋导电几何结构2B2通过第八导电金属过孔25连通。The meandering spiral conductive geometric structures 2A2 and 2B2 are located in the middle of the C-shaped conductive geometric structures 2A3 and 2B3. One end of the meandering spiral conductive geometric structures 2A2 and 2B2 is located on the central axis of the length direction of the second groove of the second conductive geometric structure printing area where the meandering spiral conductive geometric structures 2A2 and 2B2 are located and close to the second groove. The other end of the meandering spiral conductive geometric structures 2A2 and 2B2 is located in the center of the second conductive geometric structure printing area. One end of the meandering spiral conductive geometric structures 2A2 and 2B2 is first printed along the width direction of the second conductive geometric structure printing area, then bent at a right angle toward the direction close to the second groove, and then printed in a right-angle spiral shape to the other end. Conductive metal vias 24 and 25 penetrating the surface of the second dielectric substrate 21 are respectively provided at both ends of the geometric structures 2A2 and 2B2. The seventh conductive metal via 24 is located at the center of the second conductive geometric structure printing area. The meandering spiral conductive geometric structures 2A2 and 2B2 on both sides of the second dielectric substrate 21 are connected through the seventh conductive metal via 24. The eighth conductive metal via 25 is close to the second slot. The third meandering spiral conductive geometric structure 2A2 on one side of the second dielectric substrate 21 and a fourth meandering spiral conductive geometric structure 2B2 on the other side of the second dielectric substrate 21 that is not directly opposite to it but adjacent to it are connected through the eighth conductive metal via 25.
第一介质基板11的第一切槽和第二介质基板21的第二切槽相互穿插时,第一介质基板11上的第二导电金属过孔15和第二介质基板21上的第八导电金属过孔25分别位于介质基板11、21的宽度边的中心点的两侧。When the first slot of the first dielectric substrate 11 and the second slot of the second dielectric substrate 21 intersect each other, the second conductive metal via 15 on the first dielectric substrate 11 and the eighth conductive metal via 25 on the second dielectric substrate 21 are located on both sides of the center point of the width side of the dielectric substrates 11 and 21 respectively.
第一介质基板11的第一切槽和第二介质基板21的第二切槽的长度为介质基板11、21总宽度的1/2,第一切槽和第二切槽的宽度略宽于介质基板11、21的厚度。The length of the first slot of the first dielectric substrate 11 and the second slot of the second dielectric substrate 21 is 1/2 of the total width of the dielectric substrates 11 and 21 , and the width of the first slot and the second slot is slightly wider than the thickness of the dielectric substrates 11 and 21 .
回形螺旋导电几何结构1A2、1B2、2A2、2B2的螺旋圈数为1.25圈~1.5圈。The number of spiral turns of the meander-shaped spiral conductive geometric structures 1A2, 1B2, 2A2, and 2B2 is 1.25 to 1.5 turns.
C形导电几何结构1A3、1B3、2A3、2B3的蛇形开槽的弯折次数为2次。The serpentine slots of the C-shaped conductive geometric structures 1A3, 1B3, 2A3, and 2B3 have two bends.
本发明的具体实施例如下:The specific embodiments of the present invention are as follows:
本实施例提供的高通、陡截止的宽入射角频率选择结构的第一选择组件10和第二选择组件20中的介质基板11、21上的切槽与介质基板11、21两个表面上的导电几何结构均成周期排列,周期为4mm。The slots on the dielectric substrates 11 and 21 in the first selection component 10 and the second selection component 20 of the high-pass, steep-cutoff, wide-incident-angle frequency selection structure provided in this embodiment and the conductive geometric structures on the two surfaces of the dielectric substrates 11 and 21 are arranged periodically with a period of 4 mm.
本实施例提供的高通、陡截止的宽入射角频率选择结构的第一选择组件10和第二选择组件20中的介质基板11、21的总宽度为30mm,介质基板11、21的厚度为0.2mm,切槽长度为介质基板11、21总宽度的1/2,即15mm,切槽宽度略宽于介质基板11、21的厚度,为0.2mm~0.22mm,具体可采用0.22mm,介质基板11、21的介电常数为3.1,损耗正切为0.0028。The total width of the dielectric substrates 11 and 21 in the first selection component 10 and the second selection component 20 of the high-pass, steep-cutoff, wide-incident-angle frequency selection structure provided in this embodiment is 30 mm, the thickness of the dielectric substrates 11 and 21 is 0.2 mm, the length of the slot is 1/2 of the total width of the dielectric substrates 11 and 21, that is, 15 mm, the width of the slot is slightly wider than the thickness of the dielectric substrates 11 and 21, and is 0.2 mm to 0.22 mm, specifically 0.22 mm, the dielectric constant of the dielectric substrates 11 and 21 is 3.1, and the loss tangent is 0.0028.
本实施例提供的高通、陡截止的宽入射角频率选择结构的介质基板11、21两个表面的回形螺旋导电几何结构1A2、1B2、2A2、2B2的螺旋圈数为1.25圈~1.5圈,具体可采用1.25圈,回形螺旋导电几何结构1A2、1B2、2A2、2B2的线宽为0.2mm,螺旋圈与圈之间的间距为0.4mm。The number of spiral turns of the zigzag spiral conductive geometric structures 1A2, 1B2, 2A2, and 2B2 on the two surfaces of the dielectric substrates 11 and 21 of the high-pass, steep-cutoff, wide-incident-angle frequency selective structure provided in this embodiment is 1.25 to 1.5 turns, specifically 1.25 turns, the line width of the zigzag spiral conductive geometric structures 1A2, 1B2, 2A2, and 2B2 is 0.2 mm, and the spacing between the spiral turns is 0.4 mm.
本实施例提供的高通、陡截止的宽入射角频率选择结构的介质基板11、21两个表面的C形导电几何结构1A3、1B3、2A3、2B3两侧的导电金属贴片上带有蛇形开槽,蛇形开槽的弯折次数为2次,C形导电几何结构1A3、1B3、2A3、2B3横向导电金属结构的线宽为0.2mm,C形导电几何结构1A3、1B3、2A3、2B3两侧较宽的纵向导电金属结构的线宽为1.0mm,C形导电几何结构1A3、1B3、2A3、2B3两侧较宽的纵向导电金属结构上的蛇形开槽的宽度为0.2mm。The conductive metal patches on both sides of the C-shaped conductive geometric structures 1A3, 1B3, 2A3, 2B3 on the two surfaces of the dielectric substrates 11, 21 of the high-pass, steep-cutoff, wide-incident-angle frequency selective structure provided in this embodiment have serpentine grooves, and the serpentine grooves are bent twice. The line width of the lateral conductive metal structure of the C-shaped conductive geometric structures 1A3, 1B3, 2A3, 2B3 is 0.2 mm, the line width of the wider longitudinal conductive metal structure on both sides of the C-shaped conductive geometric structures 1A3, 1B3, 2A3, 2B3 is 1.0 mm, and the width of the serpentine grooves on the wider longitudinal conductive metal structures on both sides of the C-shaped conductive geometric structures 1A3, 1B3, 2A3, 2B3 is 0.2 mm.
本实施例提供的高通、陡截止的宽入射角频率选择结构的介质基板11、21两个表面的回形螺旋导电几何结构1A2、1B2、2A2、2B2在螺旋中心位置处通过导电金属过孔14、24相连接,在回形螺旋导电几何结构1A2、1B2、2A2、2B2最外侧延伸出导电金属臂至周期边缘,并且在周期边缘处通过导电金属过孔15、25与相邻周期的回形螺旋导电几何结构1A2、1B2、2A2、2B2延伸出的导电金属臂相连接,导电金属过孔14、15、24、25的直径为0.2mm。The zigzag spiral conductive geometric structures 1A2, 1B2, 2A2, 2B2 on the two surfaces of the dielectric substrate 11, 21 of the high-pass, steep-cutoff, wide-incident-angle frequency selective structure provided in this embodiment are connected at the center of the spiral through conductive metal vias 14, 24, and conductive metal arms are extended from the outermost sides of the zigzag spiral conductive geometric structures 1A2, 1B2, 2A2, 2B2 to the edge of the period, and are connected to the conductive metal arms extending from the zigzag spiral conductive geometric structures 1A2, 1B2, 2A2, 2B2 of the adjacent period through conductive metal vias 15, 25 at the edge of the period. The diameter of the conductive metal vias 14, 15, 24, 25 is 0.2 mm.
本实施例提供的高通、陡截止的宽入射角频率选择结构的介质基板11、21两个表面的C形导电几何结构1A3、1B3、2A3、2B3开口方向相反,二者在四个角处通过导电金属过孔16、17、18、19、26、27、28、29相连接,导电金属过孔16、17、18、19、26、27、28、29的直径为0.2mm。The C-shaped conductive geometric structures 1A3, 1B3, 2A3, and 2B3 on the two surfaces of the dielectric substrates 11 and 21 of the high-pass, steep-cutoff, wide-incident-angle frequency selective structure provided in this embodiment have opposite opening directions, and the two are connected at the four corners by conductive metal vias 16, 17, 18, 19, 26, 27, 28, and 29, and the diameter of the conductive metal vias 16, 17, 18, 19, 26, 27, 28, and 29 is 0.2 mm.
本实施例提供的高通、陡截止的宽入射角频率选择结构的多个第一选择组件10之间以及多个第二选择组件20之间的间隔为4mm,第一选择组件10的条形通槽插装到第二选择组件20的条形通槽的异侧上形成榫卯配合结构,并且第一选择组件10和第二选择组件20成相互正交垂直穿插布置形成最终实施例。The spacing between multiple first selection components 10 and multiple second selection components 20 of the high-pass, steep-cutoff, wide-incident-angle frequency selection structure provided in this embodiment is 4 mm, and the strip-shaped through-slots of the first selection components 10 are inserted into the opposite sides of the strip-shaped through-slots of the second selection components 20 to form a mortise and tenon fitting structure, and the first selection components 10 and the second selection components 20 are arranged to be orthogonal and vertically interlaced with each other to form the final embodiment.
本实施例提供的高通、陡截止的宽入射角频率选择结构通过全波仿真软件获得的结果如图6和图7所示:本实施例能够实现5GHz以下、任意极化方向、0~60度宽入射角范围内的空间电磁波高通滤波功能,在小于2dB插入损耗条件下通带相对分数带宽高达93.3%,在13dB抑制度条件下通带与阻带之间的过渡带仅有0.13GHz,具有陡截止效果。The results of the high-pass, steep-cutoff, wide-incident-angle frequency selection structure provided in this embodiment obtained through full-wave simulation software are shown in Figures 6 and 7: This embodiment can achieve the high-pass filtering function of spatial electromagnetic waves below 5 GHz, in any polarization direction, and in a wide incident angle range of 0 to 60 degrees. The relative fractional bandwidth of the passband is as high as 93.3% under the condition of less than 2dB insertion loss, and the transition band between the passband and the stopband is only 0.13GHz under the condition of 13dB suppression, with a steep cutoff effect.
根据本发明的一个方面,具体实施提供了一种天线罩,该天线罩包括上述实施例中的高通、陡截止的宽入射角频率选择结构。通过该天线罩能够有效抑制非工作频带的电磁波,从而降低工作频带外的干扰。According to one aspect of the present invention, a radome is specifically provided, which includes the high-pass, steep-cutoff, wide-incident-angle frequency selection structure in the above embodiment. The radome can effectively suppress electromagnetic waves in non-working frequency bands, thereby reducing interference outside the working frequency band.
根据本发明的另一个方面,具体实施提供了一种天线系统中提高天线间隔离度的装置。通过在天线系统中设置该装置能够有效抑制非工作频带的电磁波,提高不同频段天线之间的隔离度,增强天线系统的性能。According to another aspect of the present invention, a device for improving isolation between antennas in an antenna system is specifically provided. By setting the device in the antenna system, electromagnetic waves in non-working frequency bands can be effectively suppressed, isolation between antennas in different frequency bands can be improved, and performance of the antenna system can be enhanced.
以上所述仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106558766A (en) * | 2015-09-30 | 2017-04-05 | 深圳光启高等理工研究院 | Metamaterial composite structure and its manufacture method and antenna house |
| CN109411894A (en) * | 2018-10-29 | 2019-03-01 | 南京师范大学 | Three-dimensional frequency is inhibited to select surface outside a kind of dual polarization broadband |
| WO2023033819A1 (en) * | 2021-09-01 | 2023-03-09 | Georgia Tech Research Corporation | Electromagnetic metastructures for radome or antennae |
| CN116315705A (en) * | 2023-02-15 | 2023-06-23 | 浙江大学 | Low pass, wide stop band dual polarization frequency selective structure, radome and antenna system |
| CN220189885U (en) * | 2023-06-27 | 2023-12-15 | 上海日安天线有限公司 | Full polarization insensitive frequency selective surface applied to strong out-of-band rejection of ETC communication |
-
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- 2024-03-05 CN CN202410248301.XA patent/CN118412659B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106558766A (en) * | 2015-09-30 | 2017-04-05 | 深圳光启高等理工研究院 | Metamaterial composite structure and its manufacture method and antenna house |
| CN109411894A (en) * | 2018-10-29 | 2019-03-01 | 南京师范大学 | Three-dimensional frequency is inhibited to select surface outside a kind of dual polarization broadband |
| WO2023033819A1 (en) * | 2021-09-01 | 2023-03-09 | Georgia Tech Research Corporation | Electromagnetic metastructures for radome or antennae |
| CN116315705A (en) * | 2023-02-15 | 2023-06-23 | 浙江大学 | Low pass, wide stop band dual polarization frequency selective structure, radome and antenna system |
| CN220189885U (en) * | 2023-06-27 | 2023-12-15 | 上海日安天线有限公司 | Full polarization insensitive frequency selective surface applied to strong out-of-band rejection of ETC communication |
Non-Patent Citations (2)
| Title |
|---|
| YUNLONG WU ET AL.: "A Novel 3-D Frequency Selective Structure for Radiation Leakage Suppression in Sub-6G Highly Integrated Package", 《2022 IEEE ELECTRICAL DESIGN OF ADVANCED PACKAGING AND SYSTEMS (EDAPS)》, 26 December 2022 (2022-12-26) * |
| 李达: "基于人工电磁频率选择结构的新一代通信天线罩研究", 《中国博士学位论文全文数据库》, 15 January 2020 (2020-01-15) * |
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