CN118106633B - Substrate laser hole processing method and packaging substrate - Google Patents
Substrate laser hole processing method and packaging substrate Download PDFInfo
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- CN118106633B CN118106633B CN202410425191.XA CN202410425191A CN118106633B CN 118106633 B CN118106633 B CN 118106633B CN 202410425191 A CN202410425191 A CN 202410425191A CN 118106633 B CN118106633 B CN 118106633B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
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- H10P72/00—
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- Mechanical Engineering (AREA)
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Abstract
本发明公开了一种基板激光孔加工方法，包括如下步骤：获取激光孔位置参数，所述位置包括非大蚀刻区域和大蚀刻区域；获取激光孔孔径，所述非大蚀刻区域激光孔具有第一孔径，所述大蚀刻区域激光孔具有第二孔径；获取激光钻孔参数，所述第一孔径配置第一激光参数，所述第二孔径配置第二激光参数；根据所述激光钻孔参数加工激光孔。本申请通过对不同区域激光孔进行差异化补偿，设置差异化生产条件，能够使激光孔达到FCBGA封装基板激光孔精度要求，提高生产良率。
The present invention discloses a method for processing a substrate laser hole, comprising the following steps: obtaining laser hole position parameters, the position comprising a non-large etching area and a large etching area; obtaining the laser hole aperture, the laser hole in the non-large etching area has a first aperture, and the laser hole in the large etching area has a second aperture; obtaining laser drilling parameters, the first aperture is configured with a first laser parameter, and the second aperture is configured with a second laser parameter; and processing the laser hole according to the laser drilling parameters. The present application performs differentiated compensation on laser holes in different areas and sets differentiated production conditions, so that the laser hole can meet the laser hole accuracy requirements of the FCBGA package substrate and improve the production yield.
Description
Technical Field
The invention relates to the field of FCBGA packaging substrates, in particular to a substrate laser hole processing method and a packaging substrate.
Background
Along with the development of various electronic products to high performance, multifunction, light and thin, high reliability, as an important component in a semiconductor integrated circuit, the design requirement on the FCBGA package substrate is also higher and higher, the FCBGA package substrate needs to design an etching area in order to reduce the loss of signals, laser holes are drilled in a lower etching area, and the design of laser holes PAD is smaller. In the production process of the FCBGA packaging substrate, the glue surface of the ABF etching area is uneven due to glue filling, pits are generated, the same energy is applied to different surfaces, energy loss is caused at the pits, the laser aperture of the etching area is relatively small, and the accuracy requirement of the FCBGA packaging substrate cannot be met.
Disclosure of Invention
In order to overcome the defects in the prior art, the embodiment of the invention provides a substrate laser hole processing method and a packaging substrate, and by performing differential compensation on laser holes in different areas and setting differential production conditions, the laser holes can reach the accuracy requirement of the FCBGA packaging substrate laser holes, and the production yield is improved.
The first aspect of the application provides a processing method of a laser hole of a substrate, comprising the following steps:
Acquiring laser hole position parameters, wherein the positions comprise a non-large etching area and a large etching area;
Acquiring the aperture of a laser hole, wherein the laser hole in the non-large etching area has a first aperture, and the laser hole in the large etching area has a second aperture;
Acquiring laser drilling parameters, wherein the first aperture is configured with first laser parameters, and the second aperture is configured with second laser parameters;
And processing the laser hole according to the laser drilling parameters.
According to the technical scheme, the large etching area laser holes and the non-large etching area laser holes in the FCBGA packaging substrate are subjected to differential compensation, different laser drilling parameters are set, so that the laser hole energy of the large etching area and the laser hole energy of the non-large etching area can be balanced, and the laser hole of the large etching area can meet the laser hole precision requirement of the FCBGA packaging substrate.
Further, the large etched region is located within the etched region, and the non-large etched region includes a non-etched region and a general etched region.
When designing the packaging substrate, an etching area and a non-etching area are arranged on the substrate, and the packaging substrate can be divided into a large etching area and a non-large etching area according to different laser energy loss degrees.
Further, the step of acquiring laser hole position parameters, wherein the positions comprise a non-large etching area and a large etching area, and the method further comprises the following steps:
judging whether the current area is a large etching area according to the short side size of the etching area;
If the short side size of the etching area is more than or equal to 400um, the current area is a large etching area;
if the short side of the etched area is smaller than 400um, the current area is not a large etched area.
And obtaining the energy loss degree of the laser hole at the glue filling position of the etching area through a process test, obtaining the short side size of the large etching area according to the energy loss, performing differential compensation on the short side size, and setting differential production conditions.
Further, the step of obtaining a laser hole aperture, the non-large etched area laser hole having a first aperture, the large etched area laser hole having a second aperture, further comprises:
The first aperture is compensated according to a preset value, and the second aperture is more than the first aperture by 0.5um.
Because glue is filled in a large etching area, pits can be generated on the glue surface, the same energy is beaten to different areas, the energy loss of laser holes in the large etching area is large, and the aperture of the laser holes in the large etching glue filling area is relatively smaller, so that when the aperture of the laser holes is set, the laser holes in the large etching area are compensated by 0.5um more, and the precision of the laser holes in the large etching area meets the precision requirement of the laser holes of the FCBGA package substrate.
Further, the step of obtaining laser drilling parameters, the first aperture configuring first laser parameters, the second aperture configuring second laser parameters, further comprises:
The first laser parameters comprise first power, first frequency, first pulse width, first energy, first excitation number and first aperture;
the second laser parameters include a second power, a second frequency, a second pulse width, a second energy, a second number of excitations, a second aperture.
Further, the parameter values of the first laser parameter include:
First power: 5600W first frequency: first pulse width of 0-100 khz: 0-16ms first energy: first excitation number of 1.24 mJ: -2 a first aperture: 1.4mm
Further, the parameter values of the second laser parameter include: second power: 5600W second frequency: a second pulse width of 0-100 khz: 0-16ms second energy: second excitation number of 1.65 mJ: -2 a second aperture: 1.7mm
According to the compensation values of laser holes in different areas, different drilling parameters are set, the production energy of the laser holes in the large etching area and the size of an aperture emitted by laser are increased, and the energy of the large etching area and the energy of the non-large etching area can be balanced, so that the laser holes in the large etching area meet the accuracy requirement of the laser holes of the FCBGA package substrate.
Further, when outputting the laser holes, sorting the output sequence of the laser holes, setting the first aperture sorting to be T02 and the second aperture sorting to be T03 according to the aperture sizes of the laser holes.
The laser holes are compensated differently, and the laser holes in the large etching area and the laser holes in the non-large etching area are separated in the program setting, so that the laser holes are used for distinguishing the sizes and the ordering of the laser holes, and the subsequent laser hole processing is facilitated.
Further, the step of machining a laser hole according to the laser drilling parameters includes:
machining a laser hole in a non-large etching area;
and after the processing of the laser holes in the non-large etching area is completed, processing the laser holes in the large etching area.
The aperture of the compensated laser hole in the large etching area is larger than that of the laser hole in the non-large etching area, so that the laser hole is required to be separated in order to avoid machining errors caused by confusion of the laser hole during machining, and the laser hole is conveniently machined on a machining site.
The second aspect of the application discloses a packaging substrate, which comprises the packaging substrate obtained by the laser hole processing method disclosed in the first aspect.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages:
According to the application, the size of the large etching area is obtained according to the loss degree of the laser hole energy of the etching area, so that different compensation modes and laser hole processing parameters are set for the laser holes of the large etching area and the laser holes of the non-large etching area, the energy of the laser holes in the large etching area and the laser holes in the non-large etching area are balanced, the precision of the laser holes of the large etching area reaches the FCBGA packaging substrate requirement, and the production yield can be improved.
The foregoing and other objects, features and advantages of the invention will be apparent from the following more particular description of preferred embodiments, as illustrated in the accompanying drawings.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of laser hole processing of a package substrate according to the present invention;
FIG. 2 is a schematic view of a laser hole in a non-enclosed large etched area of a package substrate according to the present invention;
FIG. 3 is a schematic view of a laser hole of a package substrate with a large etching area;
FIG. 4 is a schematic view of a laser hole in a non-conventional angled large etched area of a package substrate according to the present invention;
FIG. 5 is a schematic diagram of a large etching area laser hole of a package substrate of the present invention;
FIG. 6 is a schematic diagram of a laser hole in a generally etched area of a package substrate in accordance with the present invention;
FIG. 7 is a schematic diagram of a typical etched area individual laser hole of a package substrate according to the present invention;
Fig. 8 is a schematic view of a laser hole in the copper area of a package substrate according to the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, the application provides a processing method of a laser hole of a substrate, comprising the following steps:
step 101, acquiring laser hole position parameters, wherein the positions comprise non-large etching areas and large etching areas.
In the process of designing the packaging substrate, an etching area and a non-etching area are arranged on the substrate, the etching area is a copper-free area, the non-etching area is a copper area, in the process of producing the packaging substrate, glue is filled in the etching area according to production requirements, and laser drilling is carried out on the substrate.
The large etched region is located within the etched region, and the non-large etched region includes a non-etched region and a general etched region.
The laser holes can be arranged in the etching area and the non-etching area, when the laser holes are arranged in the etching area, the glue surface is uneven due to glue filling in the etching area, pits are generated, the laser holes are punched on the glue surface, and energy can be lost. The degree of pits generated on the surface of the glue is different, the degree of energy loss of the laser holes is different, and the etched area is divided into a large etched area and a non-large etched area according to the degree of energy loss of the laser holes. The large etching area is an area with larger energy loss of the laser hole, the energy loss degree of the laser hole in the area is larger than that of other areas, the aperture of the laser hole drilled out does not meet the precision requirement of the packaging substrate, the laser hole drilled out in the non-large etching area can still meet the precision requirement although the energy of the laser hole is lost, and therefore the large etching area and the non-large etching area are required to be distinguished, the energy of the laser hole in the large etching area is compensated, and the laser hole drilled out by laser can meet the precision requirement of the FCBGA packaging substrate.
Specifically, the step acquires laser hole position parameters, wherein the positions comprise a non-large etching area and a large etching area, and the method further comprises the following steps:
judging whether the current area is a large etching area according to the short side size of the etching area;
If the short side size of the etching area is more than or equal to 400um, the current area is a large etching area;
if the short side of the etched area is smaller than 400um, the current area is not a large etched area.
The area with the short side size of the etching area being more than or equal to 400um is more filled with glue, the generated pit degree is larger, and when the laser hole is drilled in the current area, the lost energy is more, so the current area is defined as a large etching area, and the laser hole of the area is compensated. And the pit degree generated by the glue filling is small in the area with the short side dimension smaller than 400um, the laser hole energy loss is small in the area, and compensation is not needed.
Because of different pattern requirements, different etching areas have different rules and angles, wherein the etching areas can be divided according to different pattern rules, for example, the etching areas can be subdivided into non-closed etching areas, non-regular angle etching areas and non-regular pattern etching areas. In embodiments of the present application, the regions may be divided into non-closed large etched regions, non-regular angle large etched regions, and non-regular pattern large etched regions according to the degree of loss of laser energy generated in the etched regions. As shown in fig. 2 to 5.
And judging whether the current area is a large etching area by taking whether the short side size of the etching area is more than or equal to 400um as a judging standard. When the short side size of the etching area is smaller than 400um, the general etching area comprises an unsealed etching area, a sealed etching area, an unconventional angle etching area and an irregular pattern etching area, and when the short side size of the etching area is larger than or equal to 400um, the large etching area comprises an unsealed large etching area, a sealed large etching area, an unconventional angle large etching area and an irregular pattern large etching area.
As shown in fig. 2, the current area is a non-closed large etching area, and in particular, when the area is determined, whether the size of the short side of the etching area is larger than 400um is not taken as a determination criterion, but when the size from the upper side of the etching area to the lower side of the laser hole is larger than 400um, the area is the closed large etching area. The specific measurement mode is shown in fig. 2.
As shown in fig. 3, the current area is a closed large etching area, and when the area is determined, measurement is performed from two sides of the etching area, which are shorter, if the maximum size of the short side is 400um or more, the area is the closed large etching area. The specific measurement mode is shown in fig. 3.
As shown in fig. 4, the current area is an irregular angle large etched area, and when the area is judged, measurement is performed from two sides of the etched area, and if the maximum size of the short side is 400um or more, the area is an irregular angle large etched area. The specific measurement mode is shown in fig. 4.
As shown in fig. 5, the current region is a large etching region of irregular pattern, and when the region is determined, measurement is performed from both sides of the etched region, and if the maximum size of the short side is 400um or more, the region is a large etching region of irregular angle. The specific measurement mode is shown in fig. 5.
As shown in fig. 6, the current region is a general etching region, and when the region is determined, measurement is performed from both sides of the etching region that are shorter, and if the maximum size of the short side is smaller than 400um, the region is the general etching region. The specific measurement mode is shown in fig. 6.
As shown in fig. 7, the current region is a general etching region, and when the region is determined, measurement is performed from both sides of the etching region that are shorter, and if the maximum size of the short side is smaller than 400um, the region is the general etching region. The specific measurement mode is shown in fig. 7.
In particular, when the short side dimension of the etched region is zero, the current region is a non-etched region, i.e., a copper surface region, as shown in fig. 8.
Step 102, obtaining a laser hole aperture, wherein the laser hole of the non-large etching area has a first aperture, and the laser hole of the large etching area has a second aperture.
Specifically, the step further comprises:
The first aperture is compensated according to a preset value, and the second aperture is more than the first aperture by 0.5um.
Different laser energies may produce different apertures, and when the laser energy is lost, the aperture of the laser aperture may also be correspondingly reduced. The laser energy of the laser hole generates large loss in a large etching area, the laser hole punched in the large etching area is smaller than the laser hole in a non-large etching area, the progress requirement of the laser hole of the packaging substrate cannot be met, and the laser hole in the large etching area is set to be more than 0.5um more than the laser hole in the non-large etching area in consideration of the loss degree of the laser hole.
Step 103, obtaining laser drilling parameters, wherein the first aperture is configured with first laser parameters, and the second aperture is configured with second laser parameters.
The sizes of the laser holes are different, the set laser parameters are also different, and the processing parameters of the laser holes are determined according to the aperture of the laser holes, so that the finally processed laser holes can meet the requirements. Specifically, the machining parameters for setting the laser hole include power, pulse width, frequency, energy, and aperture size.
In this embodiment, the first laser parameter includes a first power, a first frequency, a first pulse width, a first energy, a first excitation number, a first aperture;
The second laser parameters include a second power, a second frequency, a second pulse width, a second energy, a second excitation number, a second aperture.
The laser energy is adjusted according to the laser drilling parameters, the laser energy of a large etching area and the aperture size emitted by the laser are increased, and the energy of the large etching area after energy loss and the energy of a non-large etching area can be balanced.
In this embodiment, based on the above-described processing method, the parameters of the first laser parameters are set as follows: first power: 5600W first frequency: first pulse width of 0-100 khz: 0-16ms first energy: first excitation number of 1.24 mJ: -2 a first aperture: 1.4mm.
In this embodiment, based on the above-described processing method, the parameters of the second laser parameters are set as follows: second power: 5600W second frequency: a second pulse width of 0-100 khz: 0-16ms second energy: second excitation number of 1.65 mJ: -2 a second aperture: 1.7mm.
In the embodiment, laser parameters adopted carry out laser drilling on different areas of the substrate, so that the laser drilling precision can be ensured, and the processing quality is ensured.
And 104, machining a laser hole according to the laser drilling parameters.
Specifically, the step further includes:
machining a laser hole in a non-large etching area;
and after the processing of the laser holes in the non-large etching area is completed, processing the laser holes in the large etching area.
When outputting laser holes, the laser holes in the large etching area and the laser holes in the non-large etching area are ordered in output sequence, and the first aperture ordering is set to be T02 and the second aperture ordering is set to be T03 according to the sizes of the laser holes so as to distinguish the laser holes.
For laser holes output in different sequences, the sizes of the laser holes are different due to different hole diameter compensation, the drilling tools used in processing are different, and the laser holes in the non-large etching area and the laser holes in the large etching area are processed separately. According to the sequence of the drilling tools used during machining, laser holes in a non-large etching area are machined firstly, and then the laser holes in the large etching area are machined, so that the laser holes are prevented from being confused during machining, and machining errors are caused.
In one embodiment, a package substrate is provided, where the package substrate includes the package substrate obtained by the processing method according to any one of the above embodiments.
The principles and embodiments of the present invention have been described in detail with reference to specific examples, which are provided to facilitate understanding of the method and core ideas of the present invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
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| CN106695136A (en) * | 2017-01-12 | 2017-05-24 | 广东工业大学 | Laser punching method of multilayer printed circuit board and system using same |
| CN107866640A (en) * | 2016-09-26 | 2018-04-03 | 精工电子打印科技有限公司 | Spray the manufacture method of orifice plate |
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| JP6957187B2 (en) * | 2017-04-18 | 2021-11-02 | 浜松ホトニクス株式会社 | Chip manufacturing method and silicon chip |
| US11772191B2 (en) * | 2019-10-24 | 2023-10-03 | Samsung Display Co., Ltd. | Substrate processing apparatus and method |
| US11232951B1 (en) * | 2020-07-14 | 2022-01-25 | Applied Materials, Inc. | Method and apparatus for laser drilling blind vias |
| KR102617770B1 (en) * | 2021-06-02 | 2023-12-28 | 주식회사 제이엠씨 | Hole formming system and hole forming method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107866640A (en) * | 2016-09-26 | 2018-04-03 | 精工电子打印科技有限公司 | Spray the manufacture method of orifice plate |
| CN106695136A (en) * | 2017-01-12 | 2017-05-24 | 广东工业大学 | Laser punching method of multilayer printed circuit board and system using same |
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