CN117394835A - Electronic switch drive circuit, electronic switch and control method - Google Patents
Electronic switch drive circuit, electronic switch and control method Download PDFInfo
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- CN117394835A CN117394835A CN202311375202.XA CN202311375202A CN117394835A CN 117394835 A CN117394835 A CN 117394835A CN 202311375202 A CN202311375202 A CN 202311375202A CN 117394835 A CN117394835 A CN 117394835A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
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Abstract
一种电子开关驱动电路、电子开关及控制方法,包括设置在输入和输出端之间由功率半导体组成的电子开关主回路,功率半导体的两侧并联连接有整流元件,以及与功率半导体连接的电子开关驱动电路;整流元件的输出端与电容C1和功率半导体开关Q3串联后连接,且电容C1还并联有可控的放电回路,放电回路由电阻R3串联功率半导体开关Q4组成;电子开关驱动电路包括负反馈电路和快速关闭电路;负反馈电路包括运算放大器U1、基准电压、和相应的外围电路,快速关闭电路包括半导体开关。本发明在电子开关导通时更柔和、关断过程中能量吸收快,干扰小且元器件寿命更长;多个电子开关给多路负载供电场合的单一故障影响范围小,能有效及时隔离故障分路。
An electronic switch drive circuit, electronic switch and control method, including an electronic switch main circuit composed of a power semiconductor disposed between an input and an output terminal, a rectifier element connected in parallel on both sides of the power semiconductor, and an electronic circuit connected to the power semiconductor. Switch drive circuit; the output end of the rectifier element is connected in series with the capacitor C1 and the power semiconductor switch Q3, and the capacitor C1 is also connected in parallel with a controllable discharge circuit. The discharge circuit is composed of a resistor R3 connected in series with the power semiconductor switch Q4; the electronic switch drive circuit includes Negative feedback circuit and quick shutdown circuit; the negative feedback circuit includes operational amplifier U1, reference voltage, and corresponding peripheral circuits, and the quick shutdown circuit includes semiconductor switches. The invention is softer when the electronic switch is turned on, absorbs energy quickly during the turn-off process, has less interference and has longer component life; a single fault has a small impact range when multiple electronic switches supply power to multiple loads, and can effectively isolate faults in a timely manner. branch.
Description
技术领域Technical field
本发明涉及电子开关技术领域,具体涉及一种电子开关驱动电路、电子开关及控制方法。The present invention relates to the technical field of electronic switches, and in particular to an electronic switch drive circuit, an electronic switch and a control method.
背景技术Background technique
随着功率半导体和微处理器的进步,加速了电子开关的发展和普及。目前市场上的电子开关大多使用如图1所示的方案;图1中的方案为典型的双向控制电子开关,其输入侧(IN+和IN-,一般与供电设备连接)就近与电源连接,感抗很小可以忽略;其输出侧(OUT+和OUT-组成,一般与用电设备或电池连接)接负载或电池,电缆一般较长,有一定的感抗,且因为电缆长被雷击的风险也显著增加。With the advancement of power semiconductors and microprocessors, the development and popularization of electronic switches have been accelerated. Most of the electronic switches on the market currently use the solution shown in Figure 1; the solution in Figure 1 is a typical two-way control electronic switch. Its input side (IN+ and IN-, generally connected to the power supply equipment) is connected to the power supply nearby, and the sensor The resistance is very small and can be ignored; its output side (composed of OUT+ and OUT-, generally connected to electrical equipment or batteries) is connected to the load or battery. The cable is generally long and has a certain inductive reactance, and the risk of being struck by lightning because of the long cable is also Significant increase.
图1中R1为电流采样电阻,用于电流测量与保护;驱动信号DRV1和DRV2控制功率MOSFET Q1和Q2实现输入(IN+和IN-组成)和输出(OUT+和OUT-组成)之间的通断控制,其中Q1和Q2可能分别为一个MOSFET或由多个的MOSFET并联;Q1和Q2一般有体二极管,使用时按照体二极管反向串联的方向把Q1和Q2串联实现电流的双向控制;D1、D2、D3一般为TVS或压敏电阻(可能为多个并联),或TVS与压敏电阻并联,实现过电压的控制以保护Q1和Q2不损坏;L1一般为空心电感,做退耦用,当输出(OUT+和OUT-组成)遭受雷击等恶劣情况时限制流往Q1和Q2的能量,以保护这两个功率半导体器件。In Figure 1, R1 is the current sampling resistor, used for current measurement and protection; the drive signals DRV1 and DRV2 control the power MOSFETs Q1 and Q2 to achieve on-off between the input (composed of IN+ and IN-) and the output (composed of OUT+ and OUT-) Control, where Q1 and Q2 may be one MOSFET respectively or multiple MOSFETs connected in parallel; Q1 and Q2 generally have body diodes. When used, Q1 and Q2 are connected in series in the direction of the reverse series connection of the body diodes to achieve bidirectional control of the current; D1, D2 and D3 are generally TVS or varistors (maybe multiple parallel connections), or TVS and varistors are connected in parallel to achieve over-voltage control to protect Q1 and Q2 from damage; L1 is generally an air-core inductor for decoupling. When the output (composed of OUT+ and OUT-) suffers from severe conditions such as lightning strikes, the energy flowing to Q1 and Q2 is limited to protect these two power semiconductor devices.
近些年电子开关的使用越来越多,目前主流的电子开关往往有以下几点不足:In recent years, electronic switches have been increasingly used. Current mainstream electronic switches often have the following shortcomings:
(1)其导通往往是硬开关,当负载具有容性输入时会带来比较大的冲击(浪涌)电流,这会导致干扰问题、增加供电设备的负担,过大的电流会增加设备损坏的风险;(1) Its conduction is often a hard switch. When the load has capacitive input, it will bring a relatively large impact (surge) current, which will cause interference problems and increase the burden on the power supply equipment. Excessive current will increase the load on the equipment. risk of damage;
(2)使用一个电流有限的供电设备通过多个电子开关给多个负载供电的应用场合,当某个分路的用电设备发生短路时,由于电子开关没有恒流控制及与供电设备的短路保护不匹配,往往会导致供电设备输出中断,从而所有负载短时间或长时间的供电中断;(2) In applications where a power supply device with limited current is used to supply power to multiple loads through multiple electronic switches, when a short circuit occurs in a branch of the electrical device, the electronic switch does not have constant current control and is short-circuited with the power supply device. Protection mismatch often leads to interruption of the output of power supply equipment, resulting in short-term or long-term power supply interruption to all loads;
(3)电子开关的过电压来自两个方面,一个是由于客户负载或电源电缆的感抗(同等情况下,电缆越长则感抗越大),当带着电流断开时会有电压尖峰(过电压)产生;另外一个是使用环境的雷击或其他过电压会导致线路电压和电流的不正常变大;传统方案是在电子开关的功率半导体开关器件上或回路上并联TVS或压敏电阻等能量吸收器件来被动吸收能量,其理论钳位电压一般为±20%,-20%必须高于工作电压的最高值,电子开关的功率半导体开关器件的耐压必须大于+20%,这会带来两个问题:(3) The overvoltage of electronic switches comes from two aspects. One is due to the inductive reactance of the customer load or power cable (under the same circumstances, the longer the cable, the greater the inductive reactance). When the current is disconnected, there will be a voltage spike. (overvoltage) occurs; the other is that lightning strikes or other overvoltages in the use environment will cause abnormal increases in line voltage and current; the traditional solution is to connect TVS or varistor in parallel on the power semiconductor switching device of the electronic switch or on the loop. When an energy-absorbing device passively absorbs energy, its theoretical clamping voltage is generally ±20%, and -20% must be higher than the maximum working voltage. The withstand voltage of the power semiconductor switching device of the electronic switch must be greater than +20%. This will This brings up two questions:
1)每吸收一次则器件承受一次冲击,干扰比较大且能量吸收器件寿命堪忧。1) Each time it is absorbed, the device will bear an impact. The interference is relatively large and the life of the energy-absorbing device is worrying.
2)电子开关选用的功率半导体开关器件需要更高的耐压。2) The power semiconductor switching devices selected for electronic switches require higher withstand voltage.
发明内容Contents of the invention
针对上述的技术问题,本技术方案提供了一种电子开关驱动电路、电子开关及控制方法,对电子开关的功率半导体开关器件使用恒流控制且使用主动能量吸收控制;确保电子开关导通过程更软、关断过程中能量吸收亦更软,干扰小且元器件寿命更长;多个电子开关给多路负载供电场合的单一故障影响范围小,及时隔离故障分路;能有效的解决上述问题。In view of the above technical problems, this technical solution provides an electronic switch drive circuit, electronic switch and control method, which uses constant current control and active energy absorption control for the power semiconductor switching device of the electronic switch; ensuring that the conduction process of the electronic switch is more stable. Softer, the energy absorption during the turn-off process is also softer, with less interference and longer component life; when multiple electronic switches supply power to multiple loads, the impact range of a single fault is small, and the fault shunt is isolated in time; it can effectively solve the above problems .
本发明通过以下技术方案实现:The present invention is realized through the following technical solutions:
一种电子开关驱动电路,所述的电子开关驱动电路包括:由运放为核心组成的负反馈恒流控制电路,以及快速保护关断电路;所述的负反馈恒流控制电路包括运算放大器、基准电压、以及相应的外围电路,所述的快速保护关断电路包括半导体开关。An electronic switch drive circuit. The electronic switch drive circuit includes: a negative feedback constant current control circuit composed of an operational amplifier as the core, and a fast protection shutdown circuit; the negative feedback constant current control circuit includes an operational amplifier, reference voltage, and corresponding peripheral circuits. The fast protection shutdown circuit includes a semiconductor switch.
一种电子开关驱动电路的控制方法,对上述的一种电子开关驱动电路进行恒流控制,在负反馈恒流控制电路中,当经过放大的电流信号持续小于基准电压时,运放的输出信号会正饱和,最终会输出接近运放供电的高电平,控制Q1饱和导通;反之,假设输出信号之前状态为正向饱和,当经过放大的电流信号大于基准电压时,运放的输出信号会从正饱和持续减小,直到流过Q1的电流等于设定值,此时输出信号会由于负反馈的作用稳定于某个电压值,控制Q1工作于放大状态;若经过放大的电流信号总是大于基准电压,则运放的输出信号会最终稳定在低电平。A control method for an electronic switch drive circuit, which performs constant current control on the above-mentioned electronic switch drive circuit. In the negative feedback constant current control circuit, when the amplified current signal continues to be less than the reference voltage, the output signal of the operational amplifier will be positively saturated, and will eventually output a high level close to the power supply of the op amp, controlling Q1 to turn on in saturation; conversely, assuming that the output signal was in positive saturation before, when the amplified current signal is greater than the reference voltage, the output signal of the op amp It will continue to decrease from positive saturation until the current flowing through Q1 is equal to the set value. At this time, the output signal will stabilize at a certain voltage value due to the effect of negative feedback, and Q1 will be controlled to work in the amplified state; if the amplified current signal is always is greater than the reference voltage, the output signal of the op amp will eventually stabilize at a low level.
一种电子开关,包括设置在输入和输出端之间的电流采样电阻R1、功率半导体、电感L1、以及防雷压敏电阻RV1组成的主回路;所述功率半导体的两侧并联连接有整流元件,以及与功率半导体连接的电子开关驱动电路,电子开关驱动电路采用上述的一种电子开关驱动电路,并采用上述的电子开关驱动电路的控制方法对电子开关驱动电路进行恒流控制;所述整流元件的输出端与电容C1和半导体开关Q3串联后连接,所述的电容C1还并联有可控的放电回路,放电回路由电阻R3串联功率半导体开关Q4组成。An electronic switch, including a main circuit composed of a current sampling resistor R1, a power semiconductor, an inductor L1, and a lightning protection varistor RV1 arranged between the input and output terminals; both sides of the power semiconductor are connected in parallel with rectifier elements , and an electronic switch drive circuit connected to the power semiconductor, the electronic switch drive circuit adopts the above-mentioned electronic switch drive circuit, and uses the above-mentioned electronic switch drive circuit control method to perform constant current control on the electronic switch drive circuit; the rectification The output end of the component is connected in series with the capacitor C1 and the semiconductor switch Q3. The capacitor C1 is also connected in parallel with a controllable discharge circuit. The discharge circuit is composed of a resistor R3 connected in series with the power semiconductor switch Q4.
进一步的,所述的电子开关用于控制直流分路,或控制交流分路;所述的直流分路可以为双向开关控制,或单向开关控制。Further, the electronic switch is used to control a DC shunt or an AC shunt; the DC shunt can be a two-way switch control or a one-way switch control.
进一步的,所述的电子开关用于双向开关时,功率半导体包括功率半导体Q1和功率半导体Q2,Q1控制正向电流,Q2控制反向电流;在所述双向开关的两侧连接整流桥输入端,整流桥输出与电容和功率半导体开关串联后连接。Further, when the electronic switch is used for bidirectional switching, the power semiconductor includes power semiconductor Q1 and power semiconductor Q2. Q1 controls the forward current and Q2 controls the reverse current; the input terminals of the rectifier bridge are connected on both sides of the bidirectional switch. , the rectifier bridge output is connected in series with the capacitor and power semiconductor switch.
进一步的,所述的电子开关用于单向开关时,功率半导体包括功率半导体Q1,所述单向开关的两端并联整流二极管D2、电容C1和半导体开关Q3实现能量钳位;所述整流二极管D2、电容C1和半导体开关Q3的连接方式为:整流二极管D2的阳极与单向开关Q1的体二极管的阴极相连,整流二极管D2的阴极依次与电容C1、半导体开关Q3连接,半导体开关Q3的体二极管的阳极与单向开关Q1的体二极管的阳极相连。Further, when the electronic switch is used for a one-way switch, the power semiconductor includes a power semiconductor Q1, and a rectifier diode D2, a capacitor C1 and a semiconductor switch Q3 are connected in parallel at both ends of the one-way switch to achieve energy clamping; the rectifier diode D2, capacitor C1 and semiconductor switch Q3 are connected as follows: the anode of rectifier diode D2 is connected to the cathode of the body diode of one-way switch Q1, the cathode of rectifier diode D2 is connected to capacitor C1 and semiconductor switch Q3 in turn, and the body of semiconductor switch Q3 The anode of the diode is connected to the anode of the body diode of the one-way switch Q1.
进一步的,所述的电容C1为电解电容。Further, the capacitor C1 is an electrolytic capacitor.
进一步的,所述的电容C1还并联有慢速放电电阻R2,慢速放电电阻R2为阻值很大的电阻,用于放电回路中功率半导体Q3长期不导通时确保电容C1的电压基本为零;当放电回路正常放电时,则可以忽略该电阻。Further, the capacitor C1 is also connected in parallel with a slow discharge resistor R2. The slow discharge resistor R2 is a resistor with a large resistance. It is used to ensure that the voltage of the capacitor C1 is basically when the power semiconductor Q3 in the discharge circuit does not conduct for a long time. Zero; when the discharge circuit is discharging normally, this resistance can be ignored.
进一步的,所述的输入和输出端之间,在输入也可能遭受雷击的场合,在输入侧增加一个退耦电感L2,退耦电感L2为空心电感。Furthermore, between the input and output terminals, when the input may suffer lightning strikes, a decoupling inductor L2 is added to the input side, and the decoupling inductor L2 is an air-core inductor.
进一步的,所述的功率半导体Q1和Q2、半导体开关Q3、功率半导体开关Q4可以为MOSFET管或IGBT管或晶闸管或其中的任意结合。Further, the power semiconductors Q1 and Q2, semiconductor switch Q3, and power semiconductor switch Q4 can be MOSFET tubes, IGBT tubes, or thyristors, or any combination thereof.
一种电子开关的控制方法,对上述的一种电子开关进行控制;针对电子开关出现不同的工作状态时给出不同的控制方法,具体的控制方法为:A control method for an electronic switch, which controls the above-mentioned electronic switch; provides different control methods when the electronic switch appears in different working states. The specific control method is:
工况1:所述的电子开关在正常导通时关断,电子开关Q1或/和Q2关断后,功率半导体开关Q4同时关断,半导体开关Q3一直导通,直到流过回路的电流IL1为为零后,半导体开关Q3关闭后,功率半导体开关Q4恢复导通,对电容C1放电;在此过程中,流过回路的电流IL1从工作电流减小到零,与电子开关Q1或/和Q2并联的电压VD1从零增加到供电电压;此时C1钳位的能量是:工作电流IL1存储在电感L1和输出侧电缆的感抗里面的能量;Working condition 1: The electronic switch is turned off when it is normally turned on. After the electronic switch Q1 or/and Q2 is turned off, the power semiconductor switch Q4 is turned off at the same time, and the semiconductor switch Q3 is turned on until the current IL1 flows through the loop. After reaching zero, after the semiconductor switch Q3 is turned off, the power semiconductor switch Q4 resumes conduction and discharges the capacitor C1; during this process, the current IL1 flowing through the loop decreases from the operating current to zero, and the electronic switch Q1 or/and The parallel voltage VD1 of Q2 increases from zero to the supply voltage; at this time, the energy of C1 clamp is: the energy stored in the working current IL1 in the inductance L1 and the inductive reactance of the output side cable;
工况2:在关断状态有浪涌时,在关断状态下检测到输出端端口有浪涌电压/大于保护值时,需要立即导通半导体开关Q3对能量进行钳位,以此保护电子开关Q1或/和Q2,当工作电流IL1从小变大再减小到零后,则关闭半导体开关Q3,然后导通功率半导体开关Q4对电容C1进行放电;此时C1钳位的能量是:输出端口经过电感L1衰减后的浪涌能量或雷击能量;Working condition 2: When there is a surge in the off state, when a surge voltage at the output port is detected in the off state/is greater than the protection value, the semiconductor switch Q3 needs to be turned on immediately to clamp the energy to protect the electronics. Switch Q1 or/and Q2, when the operating current IL1 increases from small to large and then decreases to zero, the semiconductor switch Q3 is turned off, and then the power semiconductor switch Q4 is turned on to discharge the capacitor C1; at this time, the energy clamped by C1 is: output The surge energy or lightning strike energy attenuated by the inductor L1 at the port;
工况3:正常关断时导通,电子开关Q1或/和Q2由关闭状态变为导通状态后,工作电流IL1很快到负载电流,VD1很快降为零;此时C1钳位没有能量;Working condition 3: It is turned on during normal shutdown. After the electronic switch Q1 or/and Q2 changes from the off state to the on state, the operating current IL1 quickly reaches the load current and VD1 quickly drops to zero; at this time, the C1 clamp is not energy;
工况4:导通状态时有浪涌,由于雷击或浪涌的原因,当工作电流IL1大于保护值时,立即关闭电子开关Q1或/和Q2,半导体开关Q3一直导通,导通功率半导体开关Q4变为关闭状态;此时C1钳位的能量是:因浪涌或雷击产生的存储在L1和输出电缆内的能量。Working condition 4: There is a surge in the conduction state. Due to lightning strikes or surges, when the operating current IL1 is greater than the protection value, the electronic switch Q1 or/and Q2 is immediately turned off, and the semiconductor switch Q3 is always turned on, turning on the power semiconductor. Switch Q4 becomes closed; the energy clamped by C1 at this time is the energy stored in L1 and the output cable due to surges or lightning strikes.
有益效果beneficial effects
本发明提出的一种电子开关驱动电路、电子开关及控制方法,与现有技术相比较,其具有以下有益效果:The invention proposes an electronic switch drive circuit, electronic switch and control method. Compared with the existing technology, it has the following beneficial effects:
本发明对电子开关的功率半导体开关器件连接驱动电路,并对驱动电路使用恒流控制,使得电子开关导通过程更柔和;并通过能量吸收回路主动对能量吸收控制,使得电子开关导通过程更柔和、关断过程中能量吸收快,干扰小且元器件寿命更长;多个电子开关给多路负载供电场合的单一故障影响范围小,能有效及时隔离故障分路。The present invention connects the power semiconductor switching device of the electronic switch to the driving circuit and uses constant current control on the driving circuit to make the conduction process of the electronic switch softer; and actively controls the energy absorption through the energy absorption loop to make the conduction process of the electronic switch smoother. It is soft, has fast energy absorption during the turn-off process, has little interference and has a longer component life; when multiple electronic switches supply power to multiple loads, a single fault has a small impact range and can effectively isolate faulty branches in a timely manner.
本发明通过恒流控制方法去控制DRV1和DRV2在用电设备为容性的情况下,也可以用设定的电流恒流给用电设备充电,直到用电设备与供电设备电压相等;且通过本发明的电子开关供电的过程中,即使用电设备异常(如短路),其动态电流亦可被很好的控制,提高了供电设备、电子开关、用电设备的可靠性和稳定性。The present invention uses a constant current control method to control DRV1 and DRV2. When the electrical equipment is capacitive, the electrical equipment can also be charged with a set constant current until the voltage of the electrical equipment and the power supply equipment are equal; and by During the power supply process of the electronic switch of the present invention, even if the electrical equipment is abnormal (such as short circuit), its dynamic current can be well controlled, which improves the reliability and stability of the power supply equipment, electronic switch, and electrical equipment.
本发明具备恒流控制功能的电子开关,可以做到即使某个用电设备故障(如短路),其瞬态和长期的影响范围也可被控制在故障分路本身,不会影响其他分路和供电设备的正常使用。The electronic switch with the constant current control function of the present invention can achieve that even if a certain electrical equipment fails (such as a short circuit), its transient and long-term impact range can be controlled within the fault branch itself and will not affect other branches. and normal use of power supply equipment.
附图说明Description of the drawings
图1是目前市场上的电子开关使用拓扑方案示意图。Figure 1 is a schematic diagram of the topology scheme of electronic switches currently on the market.
图2是本发明中实施例1的电子开关驱动电路示意图。Figure 2 is a schematic diagram of the electronic switch driving circuit of Embodiment 1 of the present invention.
图3是本发明中实施例3的拓扑电路连接示意图。Figure 3 is a schematic diagram of topological circuit connections in Embodiment 3 of the present invention.
图4是本发明中实施例4的拓扑电路连接示意图。Figure 4 is a schematic diagram of topological circuit connections in Embodiment 4 of the present invention.
图5是本发明中实施例5的拓扑电路连接示意图。Figure 5 is a schematic diagram of topological circuit connections in Embodiment 5 of the present invention.
图6是本发明中实施例6的拓扑电路连接示意图。Figure 6 is a schematic diagram of topological circuit connections in Embodiment 6 of the present invention.
图7是本发明中实施例7的拓扑电路连接示意图。Figure 7 is a schematic diagram of topological circuit connections in Embodiment 7 of the present invention.
图8是本发明中实施例8的拓扑电路连接示意图。Figure 8 is a schematic diagram of topological circuit connections in Embodiment 8 of the present invention.
图9是本发明中实施例9的控制方式图。Fig. 9 is a control method diagram of Embodiment 9 of the present invention.
图10是本发明中实施例9中提到的表格。Figure 10 is a table mentioned in Embodiment 9 of the present invention.
实施方式Implementation
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述。所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。在不脱离本发明设计构思的前提下,本领域普通人员对本发明的技术方案做出的各种变型和改进,均应落入到本发明的保护范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. The described embodiments are only some of the embodiments of the present invention, but not all of the embodiments. Without departing from the design concept of the present invention, various modifications and improvements made by ordinary people in the art to the technical solution of the present invention shall fall within the protection scope of the present invention.
实施例Example
如图2所示,一种电子开关驱动电路,所述的电子开关驱动电路包括:由运放为核心组成的负反馈恒流控制电路,以及快速保护关断电路。其中,功率半导体开关Q1控制正向电流(IR1为正),功率半导体开关Q2控制反向电流(IR1为负)。As shown in Figure 2, an electronic switch drive circuit is provided. The electronic switch drive circuit includes: a negative feedback constant current control circuit composed of an operational amplifier as the core, and a fast protection shutdown circuit. Among them, the power semiconductor switch Q1 controls the forward current (IR1 is positive), and the power semiconductor switch Q2 controls the reverse current (IR1 is negative).
所述的负反馈恒流控制电路包括运算放大器、基准电压、以及相应的外围电路,以功率半导体开关Q1的驱动DRV1为例,负反馈恒流控制电路由运算放大器U1、基准电压Ref1、和外围电路中电阻R4和R5、电容C3和C5、驱动电阻R8构成。所述的快速保护关断电路由半导体开关Q5组成;当有比较危险的过压、过流或过温等意外发生时,Protect1输出高电平,通过Q5快速把功率半导体开关Q1的驱动DRV1拉低。The negative feedback constant current control circuit includes an operational amplifier, a reference voltage, and corresponding peripheral circuits. Taking the drive DRV1 of the power semiconductor switch Q1 as an example, the negative feedback constant current control circuit consists of an operational amplifier U1, a reference voltage Ref1, and peripheral circuits. The circuit consists of resistors R4 and R5, capacitors C3 and C5, and driving resistor R8. The fast protection shutdown circuit is composed of semiconductor switch Q5; when a dangerous overvoltage, overcurrent or overtemperature accident occurs, Protect1 outputs a high level, and Q5 quickly pulls the drive DRV1 of the power semiconductor switch Q1. Low.
实施例Example
一种电子开关驱动电路的控制方法,对实施例1所述的一种电子开关驱动电路进行恒流控制。A control method for an electronic switch drive circuit, which performs constant current control on the electronic switch drive circuit described in Embodiment 1.
在负反馈恒流控制电路中,当经过放大的电流信号持续小于基准电压时,运放的输出信号会正饱和,最终会输出接近运放供电的高电平,控制Q1饱和导通;反之,假设输出信号之前状态为正向饱和,当经过放大的电流信号大于基准电压时,运放的输出信号会从正饱和持续减小,直到流过Q1的电流等于设定值,此时输出信号会由于负反馈的作用稳定于某个电压值,控制Q1工作于放大状态;若经过放大的电流信号总是大于基准电压,则运放的输出信号会最终稳定在低电平。In the negative feedback constant current control circuit, when the amplified current signal continues to be less than the reference voltage, the output signal of the op amp will be positively saturated, and will eventually output a high level close to the op amp power supply, controlling Q1 to be saturated and conductive; conversely, Assume that the previous state of the output signal was positive saturation. When the amplified current signal is greater than the reference voltage, the output signal of the op amp will continue to decrease from positive saturation until the current flowing through Q1 is equal to the set value. At this time, the output signal will Since the effect of negative feedback is stable at a certain voltage value, Q1 is controlled to work in an amplified state; if the amplified current signal is always greater than the reference voltage, the output signal of the op amp will eventually stabilize at a low level.
以对DRV1恒流控制为例,实施例1所述恒流控制电路的工作原理为:由运放为核心组成的负反馈恒流控制电路(运放U1、基准Ref1、电阻R4和R5、电容C3和C5、驱动电阻R8构成),当经过放大的电流信号K1*IR1持续小于基准电压Ref1时(流过回路的电流小于设定值),运放的输出DRV1会正饱和(最终会输出接近运放供电的高电平),控制Q1饱和导通。反之,假设DRV1之前状态为正向饱和,当经过放大的电流信号K1*IR1大于基准电压Ref1时(流过回路的电流大于设定值),运放的输出DRV1会从正饱和持续减小,直到流过Q1的电流等于设定值,此时DRV1会由于负反馈的作用稳定于某个电压值,控制Q1工作于放大状态;如果经过放大的电流信号K1*IR1总是大于Ref1,则运放的输出DRV1会最终稳定在低电平(接近运放供电的低电平)。Taking the constant current control of DRV1 as an example, the working principle of the constant current control circuit described in Embodiment 1 is: a negative feedback constant current control circuit composed of an op amp as the core (op amp U1, reference Ref1, resistors R4 and R5, capacitor C3 and C5, drive resistor R8), when the amplified current signal K1*IR1 continues to be less than the reference voltage Ref1 (the current flowing through the loop is less than the set value), the output DRV1 of the op amp will be positively saturated (eventually the output will be close to The high level of the op amp power supply) controls the saturated conduction of Q1. On the contrary, assuming that the previous state of DRV1 was positive saturation, when the amplified current signal K1*IR1 is greater than the reference voltage Ref1 (the current flowing through the loop is greater than the set value), the output DRV1 of the op amp will continue to decrease from positive saturation. Until the current flowing through Q1 is equal to the set value, DRV1 will stabilize at a certain voltage value due to the effect of negative feedback, controlling Q1 to work in the amplified state; if the amplified current signal K1*IR1 is always greater than Ref1, the operation The output DRV1 of the amplifier will eventually stabilize at a low level (close to the low level of the op amp power supply).
该电路与传统电路的区别在于:传统电路的开通直接给驱动DRV1(控制Q1)或DRV2(控制Q2)输出一个高电平,则Q1或Q2会立即低阻抗导通,此时如果负载为容性,则会产生很大的冲击(浪涌)电流,这会产生很大的干扰且容易损坏本电子开关、供电设备及用电设备;而使用本实施例的方式去控制DRV1和DRV2可以在用电设备为容性的情况下也可以用设定的电流恒流给用电设备充电直到用电设备与供电设备电压相等,且在通过本发明的电子开关供电的过程中,即使用电设备异常(如短路),其动态电流亦可被很好的控制,这对提高供电设备、电子开关、用电设备的可靠性至关重要。The difference between this circuit and the traditional circuit is that when the traditional circuit is turned on, it directly outputs a high level to the driver DRV1 (controlling Q1) or DRV2 (controlling Q2). Then Q1 or Q2 will immediately turn on with low impedance. At this time, if the load is capacitive property, a large impact (surge) current will be generated, which will cause great interference and easily damage the electronic switch, power supply equipment and electrical equipment; and using the method of this embodiment to control DRV1 and DRV2 can When the electrical equipment is capacitive, the electrical equipment can also be charged with a set constant current until the voltages of the electrical equipment and the power supply equipment are equal, and during the process of supplying power through the electronic switch of the present invention, the electrical equipment Abnormalities (such as short circuits), the dynamic current can also be well controlled, which is crucial to improving the reliability of power supply equipment, electronic switches, and electrical equipment.
而且当供电设备供电能力有限或OCP比较敏感时,如果没有恒流控制,单一用电设备短路则会导致供电设备输出电压被拉低,这会导致相邻用电设备长时间或短时间的断电;而具备恒流控制功能的电子开关可以做到即使某个用电设备故障(如短路),其瞬态和长期的影响范围也可被控制在故障分路本身,对其他分路和供电设备不会带来影响。Moreover, when the power supply capacity of the power supply equipment is limited or the OCP is sensitive, if there is no constant current control, a short circuit of a single electrical equipment will cause the output voltage of the power supply equipment to be pulled down, which will cause long or short-term interruption of adjacent electrical equipment. electricity; and an electronic switch with a constant current control function can achieve that even if a certain electrical equipment fails (such as a short circuit), its transient and long-term impact range can be controlled within the fault branch itself, affecting other branches and power supply. Equipment has no impact.
实施例Example
如图3所示,一种带浪涌保护和恒流控制的电子开关,包括设置在输入和输出端之间的主回路,与主回路并联的能量吸收回路,以及分别与主回路中功率半导体Q1和Q2串联连接的电子开关驱动电路构成。电子开关驱动电路采用实施例1所述的一种电子开关驱动电路,并采用实施例2所述的电子开关驱动电路控制方法对电子开关驱动电路进行恒流控制。As shown in Figure 3, an electronic switch with surge protection and constant current control includes a main circuit arranged between the input and output terminals, an energy absorption circuit in parallel with the main circuit, and power semiconductors in the main circuit respectively. It consists of an electronic switch drive circuit with Q1 and Q2 connected in series. The electronic switch drive circuit adopts an electronic switch drive circuit described in Embodiment 1, and uses the electronic switch drive circuit control method described in Embodiment 2 to perform constant current control on the electronic switch drive circuit.
电子开关用于控制直流分路,或控制交流分路;所述的直流分路可以为双向开关控制,或单向开关控制,用于直流场合时,可以INA和OUTA为正,也可以INB和OUTB为正。本实施例是针对电子开关用于双向开关,则功率半导体包括功率半导体开关Q1和功率半导体开关Q2,Q1控制正向电流,Q2控制反向电流,功率半导体开关Q1和功率半导体开关Q2还可能工作于恒流状态,但是恒流的时间不长,一般不超过1min。The electronic switch is used to control the DC shunt or the AC shunt; the DC shunt can be controlled by a two-way switch or a one-way switch. When used in DC situations, INA and OUTA can be positive, or INB and OUTB is positive. This embodiment is aimed at electronic switches used for bidirectional switching. The power semiconductor includes power semiconductor switch Q1 and power semiconductor switch Q2. Q1 controls the forward current and Q2 controls the reverse current. The power semiconductor switch Q1 and the power semiconductor switch Q2 may also work. In constant current state, but the constant current time is not long, generally no more than 1 minute.
本实施例中,具体的主回路由功率半导体Q2、电流采样电阻R1、功率半导体Q1、电感L1、以及防雷压敏电阻RV1构成。能量吸收回路由整流桥DB1、电解电容C1、慢速放电电阻R2、快速放电回路R3和Q4、控制开关Q3组成。In this embodiment, the specific main circuit is composed of power semiconductor Q2, current sampling resistor R1, power semiconductor Q1, inductor L1, and lightning protection varistor RV1. The energy absorption loop is composed of rectifier bridge DB1, electrolytic capacitor C1, slow discharge resistor R2, fast discharge loop R3 and Q4, and control switch Q3.
能量吸收回路的连接方式为:功率半导体开关Q1和Q2的两侧并联连接有整流桥DB1的输入端,整流桥DB1的输出端与电容C1和半导体开关Q3串联后连接,电容C1还并联有可控的放电回路,放电回路由电阻R3串联功率半导体开关Q4组成。The connection method of the energy absorption loop is: the input terminal of the rectifier bridge DB1 is connected in parallel on both sides of the power semiconductor switches Q1 and Q2. The output terminal of the rectifier bridge DB1 is connected in series with the capacitor C1 and the semiconductor switch Q3. The capacitor C1 is also connected in parallel with a rectifier bridge DB1. Controlled discharge loop, the discharge loop is composed of resistor R3 connected in series with power semiconductor switch Q4.
电容C1还并联有慢速放电电阻R2,慢速放电电阻R2为阻值很大的电阻,用于放电回路中功率半导体Q3长期不导通时确保电容C1的电压基本为零;当放电回路正常放电时,则可以忽略该电阻。Capacitor C1 is also connected in parallel with a slow discharge resistor R2. The slow discharge resistor R2 is a resistor with a large resistance. It is used to ensure that the voltage of capacitor C1 is basically zero when the power semiconductor Q3 in the discharge circuit does not conduct for a long time; when the discharge circuit is normal When discharging, this resistance can be ignored.
功率半导体开关Q1和Q2可以分别是一个半导体开关器件,但为了降低损耗或利于散热,一般分别为多个半导体开关器件并联。Q3和Q4一般为单个半导体开关器件即可。功率半导体Q1和Q2、半导体开关Q3、功率半导体开关Q4可以为MOSFET管或IGBT管或晶闸管或其中的任意结合。电容C1为电解电容,主回路与传统方案类似;本实施例的创新主要在Q1、Q2的驱动电路和能量吸收电路。Power semiconductor switches Q1 and Q2 can each be a semiconductor switching device, but in order to reduce losses or facilitate heat dissipation, multiple semiconductor switching devices are generally connected in parallel. Q3 and Q4 are generally single semiconductor switching devices. Power semiconductors Q1 and Q2, semiconductor switch Q3, and power semiconductor switch Q4 can be MOSFET tubes, IGBT tubes, thyristors, or any combination thereof. Capacitor C1 is an electrolytic capacitor, and the main circuit is similar to the traditional solution; the innovation of this embodiment is mainly in the driving circuit and energy absorption circuit of Q1 and Q2.
在实际使用时,本实施例的电路可以通过MCU(单片机或ARM等处理器)及其它相关电路完成通信进行远程控制或其它控制;以及功率半导体Q1和Q2还可能会增加散热器。此处说明的两部分内容采用常规的现有技术完成,本实施例未对其做任何的改进,此处不多做阐述。In actual use, the circuit of this embodiment can complete communication through MCU (single-chip microcomputer or processor such as ARM) and other related circuits for remote control or other control; and the power semiconductors Q1 and Q2 may also add heat sinks. The two parts described here are completed using conventional prior art. This embodiment does not make any improvements to it, and will not be elaborated here.
在本实施例中,浪涌保护电路(能量吸收回路)的条件为:Q1、Q2和Q4全部断开,Q3闭合;能量吸收路径为:输出端OUTA→电缆(有感抗)→负载(用户连接在OUTA和OUTB之间)→电缆(有感抗)→输出端OUTB→电感L1→整流桥DB1→电容C1→功率半导体Q3→整流桥DB1→输入端INB→供电电源→输入端INA→输出端OUTA,在此过程中C1的电压会因为充电而升高。In this embodiment, the conditions of the surge protection circuit (energy absorption circuit) are: Q1, Q2 and Q4 are all disconnected, Q3 is closed; the energy absorption path is: output terminal OUTA → cable (with inductive reactance) → load (user Connected between OUTA and OUTB) → cable (with inductive reactance) → output terminal OUTB → inductor L1 → rectifier bridge DB1 → capacitor C1 → power semiconductor Q3 → rectifier bridge DB1 → input terminal INB → power supply → input terminal INA → output terminal OUTA, during this process the voltage of C1 will increase due to charging.
电容C1的放电条件为:Q3断开或VD1为零,Q4闭合;在Q4导通时,电容C1的放电路径为:电容C1→电阻R3→功率半导体开关Q4→电容C1。电容C1放电且需要快速放电的原因为,确保浪涌能量吸收电路可以更快进行下一次可能的能量吸收。The discharge conditions of capacitor C1 are: Q3 is open or VD1 is zero and Q4 is closed; when Q4 is on, the discharge path of capacitor C1 is: capacitor C1 → resistor R3 → power semiconductor switch Q4 → capacitor C1. The reason why capacitor C1 discharges and needs to be discharged quickly is to ensure that the surge energy absorption circuit can absorb the next possible energy faster.
实施例Example
在实施例3的基础上,将Q3与R2、C1、R3、Q4组成的电路对调位置;得到如图4的电路。Q3和Q4的体二极管的方向与整流桥的二极管方向相同。On the basis of Embodiment 3, the positions of the circuit composed of Q3, R2, C1, R3, and Q4 are reversed; a circuit as shown in Figure 4 is obtained. The body diodes of Q3 and Q4 are oriented in the same direction as the diodes of the rectifier bridge.
在本实施例中,浪涌保护电路(能量吸收回路)的条件为:Q1、Q2和Q4全部断开,Q3闭合;能量吸收路径为:输出端OUTA→电缆(有感抗)→负载(用户连接在OUTA和OUTB之间)→电缆(有感抗)→输出端OUTB→电感L1→整流桥DB1→功率半导体Q3→电容C1→整流桥DB1→输入端INB→供电电源→输入端INA→输出端OUTA,在此过程中C1的电压会因为充电而升高。In this embodiment, the conditions of the surge protection circuit (energy absorption circuit) are: Q1, Q2 and Q4 are all disconnected, Q3 is closed; the energy absorption path is: output terminal OUTA → cable (with inductive reactance) → load (user Connected between OUTA and OUTB) → cable (with inductive reactance) → output terminal OUTB → inductor L1 → rectifier bridge DB1 → power semiconductor Q3 → capacitor C1 → rectifier bridge DB1 → input terminal INB → power supply → input terminal INA → output terminal OUTA, during this process the voltage of C1 will increase due to charging.
电容C1的放电条件和放电路径与实施例3中的相同。The discharge conditions and discharge path of the capacitor C1 are the same as those in Embodiment 3.
本实施例其他的结构和原理均与实施例3的相同,此处不再多做重复的阐述。Other structures and principles of this embodiment are the same as those of Embodiment 3, and will not be repeated here.
实施例Example
在实施例3的基础上,将R3和Q4对调位置;得到如图5的电路。Q3和Q4的体二极管的方向与整流桥的二极管方向相同。On the basis of Embodiment 3, the positions of R3 and Q4 are reversed; a circuit as shown in Figure 5 is obtained. The body diodes of Q3 and Q4 are oriented in the same direction as the diodes of the rectifier bridge.
在本实施例中,浪涌保护电路(能量吸收回路)的条件和能量吸收路径与实施例3中的相同。In this embodiment, the conditions of the surge protection circuit (energy absorption loop) and the energy absorption path are the same as in Embodiment 3.
电容C1的放电条件为:Q3断开或VD1为零,Q4闭合;在Q4导通时,电容C1的放电路径为:电容C1→功率半导体开关Q4→电阻R3→电容C1。电容C1放电且需要快速放电的原因为,确保浪涌能量吸收电路可以更快进行下一次可能的能量吸收。The discharge conditions of capacitor C1 are: Q3 is open or VD1 is zero and Q4 is closed; when Q4 is on, the discharge path of capacitor C1 is: capacitor C1 → power semiconductor switch Q4 → resistor R3 → capacitor C1. The reason why capacitor C1 discharges and needs to be discharged quickly is to ensure that the surge energy absorption circuit can absorb the next possible energy faster.
本实施例其他的结构和原理均与实施例3的相同,此处不再多做重复的阐述。Other structures and principles of this embodiment are the same as those of Embodiment 3, and will not be repeated here.
实施例Example
在实施例3的基础上,将R3和Q4的位置对调,同时将Q3与R2、C1、R3、Q4组成的电路对调位置;得到如图6的电路。Q3和Q4的体二极管的方向与整流桥的二极管方向相同。On the basis of Embodiment 3, the positions of R3 and Q4 are reversed, and at the same time, the positions of the circuit composed of Q3, R2, C1, R3, and Q4 are reversed; a circuit as shown in Figure 6 is obtained. The body diodes of Q3 and Q4 are oriented in the same direction as the diodes of the rectifier bridge.
在本实施例中,浪涌保护电路(能量吸收回路)的条件为:Q1、Q2和Q4全部断开,Q3闭合;能量吸收路径为:输出端OUTA→电缆(有感抗)→负载(用户连接在OUTA和OUTB之间)→电缆(有感抗)→输出端OUTB→电感L1→整流桥DB1→功率半导体Q3→电容C1→整流桥DB1→输入端INB→供电电源→输入端INA→输出端OUTA,在此过程中C1的电压会因为充电而升高。In this embodiment, the conditions of the surge protection circuit (energy absorption circuit) are: Q1, Q2 and Q4 are all disconnected, Q3 is closed; the energy absorption path is: output terminal OUTA → cable (with inductive reactance) → load (user Connected between OUTA and OUTB) → cable (with inductive reactance) → output terminal OUTB → inductor L1 → rectifier bridge DB1 → power semiconductor Q3 → capacitor C1 → rectifier bridge DB1 → input terminal INB → power supply → input terminal INA → output terminal OUTA, during this process the voltage of C1 will increase due to charging.
电容C1的放电条件为:Q3断开或VD1为零,Q4闭合;在Q4导通时,电容C1的放电路径为:电容C1→功率半导体开关Q4→电阻R3→电容C1。电容C1放电且需要快速放电的原因为,确保浪涌能量吸收电路可以更快进行下一次可能的能量吸收。The discharge conditions of capacitor C1 are: Q3 is open or VD1 is zero and Q4 is closed; when Q4 is on, the discharge path of capacitor C1 is: capacitor C1 → power semiconductor switch Q4 → resistor R3 → capacitor C1. The reason why capacitor C1 discharges and needs to be discharged quickly is to ensure that the surge energy absorption circuit can absorb the next possible energy faster.
本实施例其他的结构和原理均与实施例3的相同,此处不再多做重复的阐述。Other structures and principles of this embodiment are the same as those of Embodiment 3, and will not be repeated here.
实施例Example
在某些场合可能输入和输出侧都可能遭受雷击和浪涌,此时可以在实施例3的基础上,位于输入和输出端之间,在输入侧也增加一个退耦电感L2,得到如图7的电路。In some situations, both the input and output sides may be subject to lightning strikes and surges. In this case, based on Embodiment 3, a decoupling inductor L2 can be added between the input and output ends on the input side, as shown in the figure 7 circuit.
在本实施例中,浪涌保护电路(能量吸收回路)的条件为:Q1、Q2和Q4全部断开,Q3闭合;能量吸收路径为:输出端OUTA→电缆(有感抗)→负载(用户连接在OUTA和OUTB之间)→电缆(有感抗)→输出端OUTB→电感L1→整流桥DB1→电容C1→功率半导体Q3→整流桥DB1→退耦电感L2→输入端INB→供电电源→输入端INA→输出端OUTA,在此过程中C1的电压会因为充电而升高。In this embodiment, the conditions of the surge protection circuit (energy absorption circuit) are: Q1, Q2 and Q4 are all disconnected, Q3 is closed; the energy absorption path is: output terminal OUTA → cable (with inductive reactance) → load (user Connected between OUTA and OUTB) → cable (with inductive reactance) → output terminal OUTB → inductor L1 → rectifier bridge DB1 → capacitor C1 → power semiconductor Q3 → rectifier bridge DB1 → decoupling inductor L2 → input terminal INB → power supply → Input terminal INA → output terminal OUTA, during this process the voltage of C1 will increase due to charging.
电容C1的放电条件和放电路径与实施例3中的相同。The discharge conditions and discharge path of the capacitor C1 are the same as those in Embodiment 3.
本实施例其他的结构和原理均与实施例3的相同,此处不再多做重复的阐述。Other structures and principles of this embodiment are the same as those of Embodiment 3, and will not be repeated here.
实施例Example
电子开关可用于控制直流分路,或控制交流分路;所述的直流分路可以为双向开关控制,或单向开关控制,用于直流场合时,可以INA和OUTA为正,也可以INB和OUTB为正。本实施例针对电子开关用于单向开关时,则功率半导体包括功率半导体Q1。在直流应用场合且只需要控制单向电流方向时,可以使用如图8所示的更加简单的电路。Electronic switches can be used to control DC shunts or AC shunts; the DC shunts can be controlled by two-way switches or one-way switches. When used in DC situations, INA and OUTA can be positive, or INB and OUTB is positive. In this embodiment, when the electronic switch is used as a one-way switch, the power semiconductor includes the power semiconductor Q1. In DC applications and only need to control the direction of unidirectional current, a simpler circuit as shown in Figure 8 can be used.
本实施例中,具体的主回路由电流采样电阻R1、功率半导体Q1、电感L1、以及防雷压敏电阻RV1构成。能量吸收回路由整流二极管D2、电解电容C1、慢速放电电阻R2、快速放电回路R3和Q4、控制开关Q3组成。单向开关Q1的两端并联整流二极管D2、电容C1和半导体开关Q3实现能量钳位。In this embodiment, the specific main loop is composed of a current sampling resistor R1, a power semiconductor Q1, an inductor L1, and a lightning protection varistor RV1. The energy absorption circuit is composed of rectifier diode D2, electrolytic capacitor C1, slow discharge resistor R2, fast discharge circuit R3 and Q4, and control switch Q3. The two ends of the one-way switch Q1 are connected in parallel with the rectifier diode D2, the capacitor C1 and the semiconductor switch Q3 to achieve energy clamping.
能量吸收回路的连接方式为:整流二极管D2的阳极与单向开关Q1的体二极管的阴极相连,整流二极管D2的阴极依次与电容C1、半导体开关Q3连接,半导体开关Q3的体二极管的阳极与单向开关Q1的体二极管的阳极相连电容C1还并联有可控的放电回路,放电回路由电阻R3串联功率半导体开关Q4组成。The connection method of the energy absorption loop is: the anode of the rectifier diode D2 is connected to the cathode of the body diode of the one-way switch Q1, the cathode of the rectifier diode D2 is connected to the capacitor C1 and the semiconductor switch Q3 in turn, and the anode of the body diode of the semiconductor switch Q3 is connected to the single The capacitor C1 connected to the anode of the body diode of the switch Q1 is also connected in parallel with a controllable discharge circuit. The discharge circuit is composed of a resistor R3 connected in series with the power semiconductor switch Q4.
电容C1还并联有慢速放电电阻R2,慢速放电电阻R2为阻值很大的电阻,用于放电回路中功率半导体Q3长期不导通时确保电容C1的电压基本为零;当放电回路正常放电时,则可以忽略该电阻。Capacitor C1 is also connected in parallel with a slow discharge resistor R2. The slow discharge resistor R2 is a resistor with a large resistance. It is used to ensure that the voltage of capacitor C1 is basically zero when the power semiconductor Q3 in the discharge circuit does not conduct for a long time; when the discharge circuit is normal When discharging, this resistance can be ignored.
在本实施例中,浪涌保护电路(能量吸收回路)的条件为:Q1和Q4全部断开,Q3闭合;能量吸收路径为:输出端OUTA→电缆(有感抗)→负载(用户连接在OUTA和OUTB之间)→电缆(有感抗)→输出端OUTB→电感L1→整流二极管D2→电容C1→功率半导体Q3→电阻R1→输入端INB→供电电源→输入端INA→输出端OUTA,在此过程中C1的电压会因为充电而升高。In this embodiment, the conditions of the surge protection circuit (energy absorption loop) are: Q1 and Q4 are all disconnected, Q3 is closed; the energy absorption path is: output terminal OUTA → cable (with inductive reactance) → load (user connected at Between OUTA and OUTB) → cable (with inductive reactance) → output terminal OUTB → inductor L1 → rectifier diode D2 → capacitor C1 → power semiconductor Q3 → resistor R1 → input terminal INB → power supply → input terminal INA → output terminal OUTA, During this process, the voltage of C1 will increase due to charging.
电容C1的放电条件为:Q3断开或VD1为零,Q4闭合;在Q4导通时,电容C1的放电路径为:电容C1→电阻R3→功率半导体开关Q4→电容C1。电容C1放电且需要快速放电的原因为,确保浪涌能量吸收电路可以更快进行下一次可能的能量吸收。The discharge conditions of capacitor C1 are: Q3 is open or VD1 is zero and Q4 is closed; when Q4 is on, the discharge path of capacitor C1 is: capacitor C1 → resistor R3 → power semiconductor switch Q4 → capacitor C1. The reason why capacitor C1 discharges and needs to be discharged quickly is to ensure that the surge energy absorption circuit can absorb the next possible energy faster.
本实施例其他的结构和原理均与实施例3的相同,此处不再多做重复的阐述。Other structures and principles of this embodiment are the same as those of Embodiment 3, and will not be repeated here.
实施例Example
一种电子开关的控制方法,对上述的一种电子开关进行控制。如图9所示,(以INA为供电正、INB为供电负、OUTA为负载正、OUTB为负载负为例)。IL1为流过回路的电流,VD1为与开关Q1和Q2并联的TVS D1上的电压,DRV1-DRV4为图3所示的各个开关的驱动。基于图9详细说明几种工况DRV3和DRV4的工作原理见图10所示的表格;(DRV1-DRV4分别对应Q1-Q4的驱动,高电平表示完全导通,低电平表示完全关闭)。A method for controlling an electronic switch controls the above-mentioned electronic switch. As shown in Figure 9, (taking INA as the positive power supply, INB as the negative power supply, OUTA as the load positive, and OUTB as the load negative as an example). IL1 is the current flowing through the loop, VD1 is the voltage on TVS D1 connected in parallel with switches Q1 and Q2, and DRV1-DRV4 are the drives of each switch shown in Figure 3. Based on Figure 9, the working principles of DRV3 and DRV4 under several working conditions are detailed in the table shown in Figure 10; (DRV1-DRV4 correspond to the drive of Q1-Q4 respectively, high level indicates complete conduction, and low level indicates complete shutdown) .
针对电子开关出现不同的工作状态时给出不同的控制方法,具体的控制方法为:Different control methods are given when the electronic switch appears in different working states. The specific control methods are:
工况1:所述的电子开关在正常导通时关断,电子开关Q1或/和Q2关断后,功率半导体开关Q4同时关断,半导体开关Q3一直导通,直到流过回路的电流IL1为为零后,半导体开关Q3关闭后,功率半导体开关Q4恢复导通,对电容C1放电;在此过程中,流过回路的电流IL1从工作电流减小到零,与电子开关Q1或/和Q2并联的电压VD1从零增加到供电电压;此时C1钳位的能量是:工作电流IL1存储在电感L1和输出侧电缆的感抗里面的能量;Working condition 1: The electronic switch is turned off when it is normally turned on. After the electronic switch Q1 or/and Q2 is turned off, the power semiconductor switch Q4 is turned off at the same time, and the semiconductor switch Q3 is turned on until the current IL1 flows through the loop. After reaching zero, after the semiconductor switch Q3 is turned off, the power semiconductor switch Q4 resumes conduction and discharges the capacitor C1; during this process, the current IL1 flowing through the loop decreases from the operating current to zero, and the electronic switch Q1 or/and The parallel voltage VD1 of Q2 increases from zero to the supply voltage; at this time, the energy of C1 clamp is: the energy stored in the working current IL1 in the inductance L1 and the inductive reactance of the output side cable;
工况2:在关断状态有浪涌时,在关断状态下检测到输出端端口有浪涌电压/大于保护值时,需要立即导通半导体开关Q3对能量进行钳位,以此保护电子开关Q1或/和Q2,当工作电流IL1从小变大再减小到零后,则关闭半导体开关Q3,然后导通功率半导体开关Q4对电容C1进行放电;此时C1钳位的能量是:输出端口经过电感L1衰减后的浪涌能量或雷击能量;Working condition 2: When there is a surge in the off state, when a surge voltage at the output port is detected in the off state/is greater than the protection value, the semiconductor switch Q3 needs to be turned on immediately to clamp the energy to protect the electronics. Switch Q1 or/and Q2, when the operating current IL1 increases from small to large and then decreases to zero, the semiconductor switch Q3 is turned off, and then the power semiconductor switch Q4 is turned on to discharge the capacitor C1; at this time, the energy clamped by C1 is: output The surge energy or lightning strike energy attenuated by the inductor L1 at the port;
工况3:正常关断时导通,电子开关Q1或/和Q2由关闭状态变为导通状态后,工作电流IL1很快到负载电流,VD1很快降为零;此时C1钳位没有能量;Working condition 3: It is turned on during normal shutdown. After the electronic switch Q1 or/and Q2 changes from the off state to the on state, the operating current IL1 quickly reaches the load current and VD1 quickly drops to zero; at this time, the C1 clamp is not energy;
工况4:导通状态时有浪涌,由于雷击或浪涌的原因,当工作电流IL1大于保护值时,立即关闭电子开关Q1或/和Q2,半导体开关Q3一直导通,导通功率半导体开关Q4变为关闭状态;此时C1钳位的能量是:因浪涌或雷击产生的存储在L1和输出电缆内的能量。Working condition 4: There is a surge in the conduction state. Due to lightning strikes or surges, when the operating current IL1 is greater than the protection value, the electronic switch Q1 or/and Q2 is immediately turned off, and the semiconductor switch Q3 is always turned on, turning on the power semiconductor. Switch Q4 becomes closed; the energy clamped by C1 at this time is the energy stored in L1 and the output cable due to surges or lightning strikes.
Q3 的控制逻辑为:Q1和Q2导通或IL1大于等于零或VD1大于供电电压时Q3导通(DRV3为高电平),否则Q3关闭(DRV3为低电平)。The control logic of Q3 is: Q3 is turned on (DRV3 is high level) when Q1 and Q2 are turned on or IL1 is greater than or equal to zero or VD1 is greater than the supply voltage, otherwise Q3 is turned off (DRV3 is low level).
Q4 的控制逻辑为: Q3关闭或VD1为零时Q4导通(DRV4为高电平),否则Q4关闭(DRV4为低电平)。The control logic of Q4 is: Q4 is turned on (DRV4 is high level) when Q3 is turned off or VD1 is zero, otherwise Q4 is turned off (DRV4 is low level).
上述工况中,工况1、2和4三种工况都需要进行能量吸收;该三种工况中,Q1和Q2全部为关闭状态。Among the above working conditions, working conditions 1, 2 and 4 all require energy absorption; among these three working conditions, Q1 and Q2 are all closed.
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Application publication date: 20240112 |